08090
更新时间：2025-01-23 02:10:35
品牌：INFINEON
描述：LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz
概述
数据手册08090 概述
LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz LDMOS射频功率场效应晶体管90 W， 869-960兆赫
08090 数据手册
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PDF下载PTF080901
LDMOS RF Power Field Effect Transistor
90 W, 869–960 MHz
Description
Features
The PTF080901 is a 90 W, internally matched GOLDMOS FET intended
for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold
metallization ensures excellent device lifetime and reliability.
•
•
Broadband internal matching
Typical EDGE performance
- Average output power = 45 W
- Gain = 18 dB
- Efficiency = 40%
EDGE Modulation Spectrum Performance
•
•
Typical CW performance
- Output power at P–1dB = 120 W
- Gain = 17 dB
VDD = 28 V, IDQ = 700 mA, f = 959.8 MHz
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
55
50
45
40
35
30
25
20
15
10
- Efficiency = 60%
Efficiency
Integrated ESD protection: Human Body
Model, Class 1 (minimum)
•
•
•
Excellent thermal stability
Low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
90 W (CW) output power
400 kHz
600 kHz
PTF080901E
Package 30248
36
38
40
42
44
46
48
50
Output Power (dBm)
PTF080901F
Package 31248
ESD: Electrostatic discharge sensitive device—observe handling precautions!
= 25°C unless otherwise indicated
RF Characteristics at T
CASE
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
= 28 V, I = 700 mA, P = 45 W, f = 959.8 MHz
V
DD
DQ
OUT
Characteristic
Error Vector Magnitude
Symbol
EVM (RMS)
ACPR
Min
—
Typ
2.5
–62
–74
18
Max
—
Unit
%
Modulation Spectrum @ 400 kHz
Modulation Spectrum @ 600 kHz
Gain
—
—
dBc
dBc
dB
ACPR
—
—
G
ps
—
—
Drain Efficiency
ηD
—
40
—
%
Two–Tone Measurements (tested in Infineon test fixture)
V
DD
= 28 V, I
= 650 mA, P = 90 W PEP, f = 960 MHz, tone spacing = 1 MHz
OUT
DQ
Characteristic
Gain
Symbol
Min
17
Typ
18
Max
—
Unit
dB
G
ps
Drain Efficiency
ηD
40
42
—
%
Intermodulation Distortion
Data Sheet
IMD
—
–32
–29
dBc
1
2004-04-05
PTF080901
DC Characteristics at T
= 25°C unless otherwise indicated
CASE
Characteristic
Conditions
Symbol
Min
65
—
Typ
—
Max
—
Unit
V
Drain–Source Breakdown Voltage
Drain Leakage Current
On–State Resistance
V
GS
V
DS
V
GS
V
DS
V
GS
= 0 V, I = 10 µA
V
(BR)DSS
DS
= 28 V, V
= 0 V
I
—
1.0
—
µA
Ω
GS
DSS
= 10 V, V = 0.1 V
R
DS(on)
—
0.1
3.2
—
DS
Operating Gate Voltage
Gate Leakage Current
= 28 V, I
= 650 mA
V
GS
2.5
—
4
V
DQ
= 10 V, V = 0 V
I
1.0
µA
DS
GSS
Maximum Ratings
Parameter
Symbol
Value
65
Unit
V
Drain–Source Voltage
Gate–Source Voltage
Junction Temperature
V
DSS
V
GS
–0.5 to +12
200
V
T
J
°C
Total Device Dissipation
Above 25°C derate by
P
D
335
1.9
W
W/°C
Storage Temperature Range
T
–40 to +150
0.52
°C
STG
Thermal Resistance (T
= 70°C)
R
°C/W
CASE
θJC
Typical Performance (measurements taken in production test fixture)
EDGE EVM Performance
Modulation Spectrum
VDD = 28 V, IDQ = 700 mA, f = 959.8 MHz
POUT = 40 W, f = 959.8 MHz
9
8
7
6
5
4
3
2
1
0
90
80
70
60
50
40
30
20
10
0
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
-20
-30
-40
-50
-60
-70
-80
-90
-100
EVM
400 KHz
Efficiency
600 KHz
EVM
36
38
40
42
44
46
48
50
0.47
0.57
0.67
0.77
0.87
0.97
Quiescent Current (A)
Output Power (dBm)
All published data at T
= 25°C unless otherwise indicated.
CASE
Data Sheet
2
2004-04-05
PTF080901
Typical Performance (cont.)
(at P-1dB)
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
Typical POUT, Gain & Efficiency
vs. Frequency
VDD = 28 V, IDQ = 650 mA
VDD = 28 V, IDQ = 650 mA, f1 = 959 MHz, f2 = 960 MHz
0
-10
-20
18
17
16
15
14
80
70
60
50
40
Gain
-30
-40
-50
-60
-70
-80
3rd Order
Efficiency
5th
7th
Output Pow er
860
880
900
920
940 960
43
45
47
49
51
Frequency (MHz)
Output Power (dBm), PEP
IM3 vs. Output Power at Selected Biases
Broadband Performance
VDD = 28 V, f1 = 959, f2 = 960 MHz
VDD = 28 V, IDQ = 650 mA, POUT = 45 W
-20
-25
60
0
50
40
30
20
10
-3
-30
-35
-40
-45
-50
-55
-60
480 mA
Efficiency
Return Loss
Gain
-6
650 mA
820 mA
-9
-12
-15
39
41
43
45
47
49
51
860
880
900
920
940
960
Frequency (MHz)
Output Power (dBm), PEP
All published data at T
= 25°C unless otherwise indicated.
CASE
Data Sheet
3
2004-04-05
PTF080901
Typical Performance (cont.)
Power Sweep
Gain & Efficiency vs. Output Power
VDD = 28 V, f = 960 MHz
VDD = 28 V, IDQ = 650 mA, f = 960 MHz
19.0
20
19
18
17
16
15
14
70
60
50
40
30
20
10
18.5
Gain
IDQ = 820 mA
18.0
17.5
17.0
16.5
IDQ = 650 mA
IDQ = 480 mA
Efficiency
37 39 41 43 45 47 49 51 53
Output Power (dBm)
40
43
46
49
52
Output Power (dBm)
(at 1 dB Compression)
Output Power
IS-95 CDMA Performance
VDD = 28 V, IDQ = 700 mA, f = 880 MHz
vs. Supply Voltage
IDQ = 650 mA, f = 960 MHz
52.0
51.5
51.0
50.5
50.0
60
-40
-45
-50
-55
-60
-65
-70
50
40
30
20
10
0
ACP FC – 0.75 MHz
Efficiency
ACPR FC + 1.98 MHz
24
26
28
30
32
40
41
42
43
44
45
Supply Voltage (V)
Output Power (dBm), Avg.
All published data at T
= 25°C unless otherwise indicated.
CASE
Data Sheet
4
2004-04-05
PTF080901
Typical Performance (cont.)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage.
Three–Carrier CDMA 2000 Performance
VDD = 28 V, IDQ = 700 mA, f = 880 MHz
Series show current.
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
50
45
40
35
30
25
20
15
-44
-47
-50
-53
-56
-59
-62
-65
1.50 A
3.00 A
4.50 A
6.00 A
7.50 A
9.00 A
ACP Up
ACP Low
ALT Up
Efficiency
-20
0
20
40
60
80
100
39
40
41
42
43
44
45
Case Temperature (ºC)
Output Power (dBm), Avg.
Broadband Circuit Impedance
E
N
Z0 = 50 Ω
G
D
W
Z Source
Z Load
N
G
E
L
Z Load
Z Source
V
A
S
980 MHz
980 MHz
A
O
860 MHz
860 MHz
Frequency
MHz
Z Source Ω
Z Load Ω
D
R
A
R
jX
R
jX
860
2.50
2.67
2.79
2.94
2.91
–1.09
–0.43
–0.35
0.12
1.98
1.99
1.87
1.85
1.79
–1.08
–0.32
–0.21
0.27
H
T
920
940
E
L
960
V
A
W
980
0.37
0.53
-
-
All published data at T
= 25°C unless otherwise indicated.
CASE
Data Sheet
5
2004-04-05
PTF080901
Test Circuit
VDD
QQ1
LM7805
C1
R7
3.3 kΩ
10 µF, 35 V
C21
R5
0.001µF
10 kΩ
C2
C23
0.001 µF
Q1
BCP56
0.1 µF
R3
50 V
1.2 kΩ
R6
22 kΩ
C22
0.001 µF
R1
10 Ω
R4
1.3 kΩ
R2
5.1 kΩ
L1
C3
33 pF
+
C11
+
C7
33pF
C8
1µF
C9
C10
0.1µF
50V
10µF
10µF
35V
35V
l4
l7
C12
2.2pF
DUT
C15
33pF
RF_IN
l1
l2
l3
l5
l6
l9
l10
l11
RF_OUT
C4
33pF
C5
4.3pF
C6
6.2pF
C13
1.4pF
C14
0.5pF
l8
L2
+
+
C20
10µF
35V
C16
33pF
C17
1µF
C18
10µF
35V
C19
0.1µF
50V
080901_sch
Test Circuit Schematic for 960 MHz
Circuit Assembly Information
DUT
PCB
PTF080901
0.76 mm. [.030”] thick, εr = 4.5
LDMOS Transistor
2 oz. copper
Rogers TMM4
Microstrip
Electrical Characteristics at 960 MHz
0.075 λ, 50 Ω
Dimensions: L x W (mm.)
12.83 x 1.35
Dimensions: L xW (in.)
0.505 x 0.053
0.680 x 0.053
0.360 x 0.053
2.000 x 0.030
0.365 x 0.640
0.580 x 0.600
0.890 x 0.050
0.635 x 0.600
0.880 x 0.085
0.195 x 0.053
l1
l2
0.101 λ, 50 Ω
17.27 x 1.35
l3
0.053 λ, 50 Ω
9.14 x 1.35
l4
0.289 λ, 73.66 Ω
0.061 λ, 7.48 Ω
0.097 λ, 7.93 Ω
0.132 λ, 52.47 Ω
0.105 λ, 7.93 Ω
0.134 λ, 38.02 Ω
0.029 λ, 50 Ω
50.80 x 0.75
l5
9.27 x 16.26
l6
14.73 x 15.24
22.61 x 1.27
l7, l8
l9
16.13 x 15.24
22.35 x 2.16
l10
l11
4.95 x 1.37
Data Sheet
6
2004-04-05
PTF080901
Test Circuit (cont.)
VGS
C11
R5
C21
R7
C23
C1
C2
3 5 V
1 0
+
QQ1
C22
VDD
R6
R4
R3
C7
L1
R1 R2
C8
C10
C3
C9
C12
C14 C15
RF_IN
RF_OUT
VDD
C4
C5
C18
C13
C6
C19
L2
C17
C16
C20
080901_assy
1
Reference Circuit (not to scale)
Component
C1, C9, C11, C18,
C20
Description
Manufacturer
P/N or Comment
Capacitor, 10 µF, 35 V
Digi-Key
Tantalum TE Series SMD
PCS6106TR-ND
C2, C10, C19
C3, C4, C7, C15,
C16
Capacitor, 0.1 µF, 50 V
Capacitor, 33 pF
Digi-Key
ATC
P4525-ND
100B 330
C5
Capacitor, 4.3 pF
Capacitor, 6.2 pF
Capacitor, 1 µ, 50 V
Capacitor, 2.2 pF
Capacitor, 1.4 pF
Capacitor, 0.5 pF
ATC
100B 4R3
C6
ATC
100B 6R2
C8, C17
Digi-Key
ATC
19528-ND
C12
100B 2R2
C13
ATC
100B 1R4
C14
ATC
100B 0R5
C21, C22, C23
Capacitor, 0.001 µF, 50 V, 0603
Ferrite, 6 mm
Digi-Key
Philips
Infineon
PCC1772CT-ND
53/3/4.6-452
BCP56
L1, L2
Q1
Transistor
QQ1
R1
Voltage Regulator
National Semiconductor
Digi-Key
LM7805
Resistor, 10 ohms, 1/4 W, 1206
P10ECT-ND
P5.1KECT-ND
P1.2KGCT-ND
P1.3KGCT-ND
3224W-103ETR-ND
P22KGCT-ND
P3.3KECT-ND
R2
Resistor, 5.1 k-ohms, 1/4 W, 1206
Resistor, 1.2 k-ohms, 1/10 W, 0603
Resistor, 1.3 k-ohms, 1/10 W, 0603
Resistor, Variable, 10 k-ohms, 1/4 W
Resistor, 22 k-ohms, 1/10 W, 0603
Resistor, 3.3 k-ohms, 1/4 W, 1206
Digi-Key
R3
Digi-Key
R4
Digi-Key
R5
Digi-Key
R6
Digi-Key
R7
Digi-Key
1
Gerber files for this circuit are available on request.
Data Sheet
7
2004-04-05
PTF080901
Ordering Information
Type
Package Outline
Package Description
Marking
PTF080901E
PTF080901F
30248
31248
Thermally enhanced, flange mount
Thermally enhanced, earless
PTF080901E
PTF080901F
Package Outline Specifications
Package 30248
(45° X 2.72
[.107])
C
L
2X 4.83± 0.51
[.190± .020]
D
S
9.78
[.385]
LID 9.40 + 0.10
-0.15
C
L
[.370+ .004
]
-.006
19.43 ± 0.51
[.765± .020]
2X R1.63
[.064]
G
4X R1.52
[.060]
2X 12.70
[.500]
27.94
[1.100]
1.02
[.040]
SPH 1.57
[.062]
19.81± 0.20
[.780± .008]
3.76± 0.38
[.142± .015]
0.0381 [.0015] -A-
34.04
[1.340]
0.51
[.020]
P
K G _248_0
Notes: Unless otherwise specified
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. Pins: D = drain, S = source, G = gate
4. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/products
Data Sheet
8
2004-04-05
PTF080901
Package Outline Specifications
Package 31248
( 45° X 2.72
[.107])
C
L
4.83± 0.51
[.190± .020]
D
LID 9.40+ 0.10
19.43± 0.51
[.765± .020]
-0.15
[.370+ .004
]
-.006
C
L
9.78
[.385]
G
2X 12.70
[.500]
0.51
[.020]
19.81± 0.20
[.780± .008]
S PH 1.58
[.062]
1.02
[.040]
0.0381 [.0015] -A-
S
20.57
[.810]
3.61± 0.38
[.142± .015]
P
K G _248_1
Notes: Unless otherwise specified
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. Pins: D = drain, S = source, G = gate
4. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
9
2004-04-05
PTF080901
Confidential - Limited Internal
Revision History:
2004-04-05
Data Sheet
Previous Version:
2004-01-02, Data Sheet
Page
1,8,9
6,7
Subjects (major changes since last revision)
Add information about PTF080901F, new package outline diagrams
Circuit information updated.
We Listen toYour Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
highpowerRF@infineon.com
To request other information, contact us at:
+1 877 465 3667 (1-877-GOLDMOS) USA
or +1 408 776 0600 International
GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2004-04-05
Published by InfineonTechnologies AG,
St.-Martin-Strasse 53,
81669 München, Germany
© InfineonTechnologies AG 2003.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support
device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it
is reasonable to assume that the health of the user or other persons may be endangered.
10
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