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08090

更新时间：2025-06-28 02:10:35
品牌：INFINEON
描述：LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz

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08090 概述

LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz LDMOS射频功率场效应晶体管90 W， 869-960兆赫

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PTF080901  
LDMOS RF Power Field Effect Transistor  
90 W, 869–960 MHz  
Description  
Features  
The PTF080901 is a 90 W, internally matched GOLDMOS FET intended  
for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold  
metallization ensures excellent device lifetime and reliability.  
•
•
Broadband internal matching  
Typical EDGE performance  
- Average output power = 45 W  
- Gain = 18 dB  
- Efficiency = 40%  
EDGE Modulation Spectrum Performance  
•
•
Typical CW performance  
- Output power at P–1dB = 120 W  
- Gain = 17 dB  
VDD = 28 V, IDQ = 700 mA, f = 959.8 MHz  
0
-10  
-20  
-30  
-40  
-50  
-60  
-70  
-80  
-90  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
- Efficiency = 60%  
Efficiency  
Integrated ESD protection: Human Body  
Model, Class 1 (minimum)  
•
•
•
Excellent thermal stability  
Low HCI drift  
Capable of handling 10:1 VSWR @ 28 V,  
90 W (CW) output power  
400 kHz  
600 kHz  
PTF080901E  
Package 30248  
36  
38  
40  
42  
44  
46  
48  
50  
Output Power (dBm)  
PTF080901F  
Package 31248  
ESD: Electrostatic discharge sensitive device—observe handling precautions!  
= 25°C unless otherwise indicated  
RF Characteristics at T  
CASE  
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)  
= 28 V, I = 700 mA, P = 45 W, f = 959.8 MHz  
V
DD  
DQ  
OUT  
Characteristic  
Error Vector Magnitude  
Symbol  
EVM (RMS)  
ACPR  
Min  
—
Typ  
2.5  
–62  
–74  
18  
Max  
—
Unit  
%
Modulation Spectrum @ 400 kHz  
Modulation Spectrum @ 600 kHz  
Gain  
—
—
dBc  
dBc  
dB  
ACPR  
—
—
G
ps  
—
—
Drain Efficiency  
ηD  
—
40  
—
%
Two–Tone Measurements (tested in Infineon test fixture)  
V
DD  
= 28 V, I  
= 650 mA, P = 90 W PEP, f = 960 MHz, tone spacing = 1 MHz  
OUT  
DQ  
Characteristic  
Gain  
Symbol  
Min  
17  
Typ  
18  
Max  
—
Unit  
dB  
G
ps  
Drain Efficiency  
ηD  
40  
42  
—
%
Intermodulation Distortion  
Data Sheet  
IMD  
—
–32  
–29  
dBc  
1
2004-04-05  
PTF080901  
DC Characteristics at T  
= 25°C unless otherwise indicated  
CASE  
Characteristic  
Conditions  
Symbol  
Min  
65  
—
Typ  
—
Max  
—
Unit  
V
Drain–Source Breakdown Voltage  
Drain Leakage Current  
On–State Resistance  
V
GS  
V
DS  
V
GS  
V
DS  
V
GS  
= 0 V, I = 10 µA  
V
(BR)DSS  
DS  
= 28 V, V  
= 0 V  
I
—
1.0  
—
µA  
Ω
GS  
DSS  
= 10 V, V = 0.1 V  
R
DS(on)  
—
0.1  
3.2  
—
DS  
Operating Gate Voltage  
Gate Leakage Current  
= 28 V, I  
= 650 mA  
V
GS  
2.5  
—
4
V
DQ  
= 10 V, V = 0 V  
I
1.0  
µA  
DS  
GSS  
Maximum Ratings  
Parameter  
Symbol  
Value  
65  
Unit  
V
Drain–Source Voltage  
Gate–Source Voltage  
Junction Temperature  
V
DSS  
V
GS  
–0.5 to +12  
200  
V
T
J
°C  
Total Device Dissipation  
Above 25°C derate by  
P
D
335  
1.9  
W
W/°C  
Storage Temperature Range  
T
–40 to +150  
0.52  
°C  
STG  
Thermal Resistance (T  
= 70°C)  
R
°C/W  
CASE  
θJC  
Typical Performance (measurements taken in production test fixture)  
EDGE EVM Performance  
Modulation Spectrum  
VDD = 28 V, IDQ = 700 mA, f = 959.8 MHz  
POUT = 40 W, f = 959.8 MHz  
9
8
7
6
5
4
3
2
1
0
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
2.1  
1.9  
1.7  
1.5  
1.3  
1.1  
0.9  
0.7  
0.5  
-20  
-30  
-40  
-50  
-60  
-70  
-80  
-90  
-100  
EVM  
400 KHz  
Efficiency  
600 KHz  
EVM  
36  
38  
40  
42  
44  
46  
48  
50  
0.47  
0.57  
0.67  
0.77  
0.87  
0.97  
Quiescent Current (A)  
Output Power (dBm)  
All published data at T  
= 25°C unless otherwise indicated.  
CASE  
Data Sheet  
2
2004-04-05  
PTF080901  
Typical Performance (cont.)  
(at P-1dB)  
Intermodulation Distortion vs. Output Power  
(as measured in a broadband circuit)  
Typical POUT, Gain & Efficiency  
vs. Frequency  
VDD = 28 V, IDQ = 650 mA  
VDD = 28 V, IDQ = 650 mA, f1 = 959 MHz, f2 = 960 MHz  
0
-10  
-20  
18  
17  
16  
15  
14  
80  
70  
60  
50  
40  
Gain  
-30  
-40  
-50  
-60  
-70  
-80  
3rd Order  
Efficiency  
5th  
7th  
Output Pow er  
860  
880  
900  
920  
940 960  
43  
45  
47  
49  
51  
Frequency (MHz)  
Output Power (dBm), PEP  
IM3 vs. Output Power at Selected Biases  
Broadband Performance  
VDD = 28 V, f1 = 959, f2 = 960 MHz  
VDD = 28 V, IDQ = 650 mA, POUT = 45 W  
-20  
-25  
60  
0
50  
40  
30  
20  
10  
-3  
-30  
-35  
-40  
-45  
-50  
-55  
-60  
480 mA  
Efficiency  
Return Loss  
Gain  
-6  
650 mA  
820 mA  
-9  
-12  
-15  
39  
41  
43  
45  
47  
49  
51  
860  
880  
900  
920  
940  
960  
Frequency (MHz)  
Output Power (dBm), PEP  
All published data at T  
= 25°C unless otherwise indicated.  
CASE  
Data Sheet  
3
2004-04-05  
PTF080901  
Typical Performance (cont.)  
Power Sweep  
Gain & Efficiency vs. Output Power  
VDD = 28 V, f = 960 MHz  
VDD = 28 V, IDQ = 650 mA, f = 960 MHz  
19.0  
20  
19  
18  
17  
16  
15  
14  
70  
60  
50  
40  
30  
20  
10  
18.5  
Gain  
IDQ = 820 mA  
18.0  
17.5  
17.0  
16.5  
IDQ = 650 mA  
IDQ = 480 mA  
Efficiency  
37 39 41 43 45 47 49 51 53  
Output Power (dBm)  
40  
43  
46  
49  
52  
Output Power (dBm)  
(at 1 dB Compression)  
Output Power  
IS-95 CDMA Performance  
VDD = 28 V, IDQ = 700 mA, f = 880 MHz  
vs. Supply Voltage  
IDQ = 650 mA, f = 960 MHz  
52.0  
51.5  
51.0  
50.5  
50.0  
60  
-40  
-45  
-50  
-55  
-60  
-65  
-70  
50  
40  
30  
20  
10  
0
ACP FC – 0.75 MHz  
Efficiency  
ACPR FC + 1.98 MHz  
24  
26  
28  
30  
32  
40  
41  
42  
43  
44  
45  
Supply Voltage (V)  
Output Power (dBm), Avg.  
All published data at T  
= 25°C unless otherwise indicated.  
CASE  
Data Sheet  
4
2004-04-05  
PTF080901  
Typical Performance (cont.)  
Bias Voltage vs. Temperature  
Voltage normalized to typical gate voltage.  
Three–Carrier CDMA 2000 Performance  
VDD = 28 V, IDQ = 700 mA, f = 880 MHz  
Series show current.  
1.03  
1.02  
1.01  
1.00  
0.99  
0.98  
0.97  
0.96  
50  
45  
40  
35  
30  
25  
20  
15  
-44  
-47  
-50  
-53  
-56  
-59  
-62  
-65  
1.50 A  
3.00 A  
4.50 A  
6.00 A  
7.50 A  
9.00 A  
ACP Up  
ACP Low  
ALT Up  
Efficiency  
-20  
0
20  
40  
60  
80  
100  
39  
40  
41  
42  
43  
44  
45  
Case Temperature (ºC)  
Output Power (dBm), Avg.  
Broadband Circuit Impedance  
E
N
Z0 = 50 Ω  
G
D
W
Z Source  
Z Load  
N
G
E
L
Z Load  
Z Source  
V
A
S
980 MHz  
980 MHz  
A
O
860 MHz  
860 MHz  
Frequency  
MHz  
Z Source Ω  
Z Load Ω  
D
R
A
R
jX  
R
jX  
860  
2.50  
2.67  
2.79  
2.94  
2.91  
–1.09  
–0.43  
–0.35  
0.12  
1.98  
1.99  
1.87  
1.85  
1.79  
–1.08  
–0.32  
–0.21  
0.27  
H
T
920  
940  
E
L
960  
V
A
W
980  
0.37  
0.53  
-
-
All published data at T  
= 25°C unless otherwise indicated.  
CASE  
Data Sheet  
5
2004-04-05  
PTF080901  
Test Circuit  
VDD  
QQ1  
LM7805  
C1  
R7  
3.3 kΩ  
10 µF, 35 V  
C21  
R5  
0.001µF  
10 kΩ  
C2  
C23  
0.001 µF  
Q1  
BCP56  
0.1 µF  
R3  
50 V  
1.2 kΩ  
R6  
22 kΩ  
C22  
0.001 µF  
R1  
10 Ω  
R4  
1.3 kΩ  
R2  
5.1 kΩ  
L1  
C3  
33 pF  
+
C11  
+
C7  
33pF  
C8  
1µF  
C9  
C10  
0.1µF  
50V  
10µF  
10µF  
35V  
35V  
l4  
l7  
C12  
2.2pF  
DUT  
C15  
33pF  
RF_IN  
l1  
l2  
l3  
l5  
l6  
l9  
l10  
l11  
RF_OUT  
C4  
33pF  
C5  
4.3pF  
C6  
6.2pF  
C13  
1.4pF  
C14  
0.5pF  
l8  
L2  
+
+
C20  
10µF  
35V  
C16  
33pF  
C17  
1µF  
C18  
10µF  
35V  
C19  
0.1µF  
50V  
080901_sch  
Test Circuit Schematic for 960 MHz  
Circuit Assembly Information  
DUT  
PCB  
PTF080901  
0.76 mm. [.030”] thick, εr = 4.5  
LDMOS Transistor  
2 oz. copper  
Rogers TMM4  
Microstrip  
Electrical Characteristics at 960 MHz  
0.075 λ, 50 Ω  
Dimensions: L x W (mm.)  
12.83 x 1.35  
Dimensions: L xW (in.)  
0.505 x 0.053  
0.680 x 0.053  
0.360 x 0.053  
2.000 x 0.030  
0.365 x 0.640  
0.580 x 0.600  
0.890 x 0.050  
0.635 x 0.600  
0.880 x 0.085  
0.195 x 0.053  
l1  
l2  
0.101 λ, 50 Ω  
17.27 x 1.35  
l3  
0.053 λ, 50 Ω  
9.14 x 1.35  
l4  
0.289 λ, 73.66 Ω  
0.061 λ, 7.48 Ω  
0.097 λ, 7.93 Ω  
0.132 λ, 52.47 Ω  
0.105 λ, 7.93 Ω  
0.134 λ, 38.02 Ω  
0.029 λ, 50 Ω  
50.80 x 0.75  
l5  
9.27 x 16.26  
l6  
14.73 x 15.24  
22.61 x 1.27  
l7, l8  
l9  
16.13 x 15.24  
22.35 x 2.16  
l10  
l11  
4.95 x 1.37  
Data Sheet  
6
2004-04-05  
PTF080901  
Test Circuit (cont.)  
VGS  
C11  
R5  
C21  
R7  
C23  
C1  
C2  
3 5 V  
1 0  
+
QQ1  
C22  
VDD  
R6  
R4  
R3  
C7  
L1  
R1 R2  
C8  
C10  
C3  
C9  
C12  
C14 C15  
RF_IN  
RF_OUT  
VDD  
C4  
C5  
C18  
C13  
C6  
C19  
L2  
C17  
C16  
C20  
080901_assy  
1
Reference Circuit (not to scale)  
Component  
C1, C9, C11, C18,  
C20  
Description  
Manufacturer  
P/N or Comment  
Capacitor, 10 µF, 35 V  
Digi-Key  
Tantalum TE Series SMD  
PCS6106TR-ND  
C2, C10, C19  
C3, C4, C7, C15,  
C16  
Capacitor, 0.1 µF, 50 V  
Capacitor, 33 pF  
Digi-Key  
ATC  
P4525-ND  
100B 330  
C5  
Capacitor, 4.3 pF  
Capacitor, 6.2 pF  
Capacitor, 1 µ, 50 V  
Capacitor, 2.2 pF  
Capacitor, 1.4 pF  
Capacitor, 0.5 pF  
ATC  
100B 4R3  
C6  
ATC  
100B 6R2  
C8, C17  
Digi-Key  
ATC  
19528-ND  
C12  
100B 2R2  
C13  
ATC  
100B 1R4  
C14  
ATC  
100B 0R5  
C21, C22, C23  
Capacitor, 0.001 µF, 50 V, 0603  
Ferrite, 6 mm  
Digi-Key  
Philips  
Infineon  
PCC1772CT-ND  
53/3/4.6-452  
BCP56  
L1, L2  
Q1  
Transistor  
QQ1  
R1  
Voltage Regulator  
National Semiconductor  
Digi-Key  
LM7805  
Resistor, 10 ohms, 1/4 W, 1206  
P10ECT-ND  
P5.1KECT-ND  
P1.2KGCT-ND  
P1.3KGCT-ND  
3224W-103ETR-ND  
P22KGCT-ND  
P3.3KECT-ND  
R2  
Resistor, 5.1 k-ohms, 1/4 W, 1206  
Resistor, 1.2 k-ohms, 1/10 W, 0603  
Resistor, 1.3 k-ohms, 1/10 W, 0603  
Resistor, Variable, 10 k-ohms, 1/4 W  
Resistor, 22 k-ohms, 1/10 W, 0603  
Resistor, 3.3 k-ohms, 1/4 W, 1206  
Digi-Key  
R3  
Digi-Key  
R4  
Digi-Key  
R5  
Digi-Key  
R6  
Digi-Key  
R7  
Digi-Key  
1
Gerber files for this circuit are available on request.  
Data Sheet  
7
2004-04-05  
PTF080901  
Ordering Information  
Type  
Package Outline  
Package Description  
Marking  
PTF080901E  
PTF080901F  
30248  
31248  
Thermally enhanced, flange mount  
Thermally enhanced, earless  
PTF080901E  
PTF080901F  
Package Outline Specifications  
Package 30248  
(45° X 2.72  
[.107])  
C
L
2X 4.83± 0.51  
[.190± .020]  
D
S
9.78  
[.385]  
LID 9.40 + 0.10  
-0.15  
C
L
[.370+ .004  
]
-.006  
19.43 ± 0.51  
[.765± .020]  
2X R1.63  
[.064]  
G
4X R1.52  
[.060]  
2X 12.70  
[.500]  
27.94  
[1.100]  
1.02  
[.040]  
SPH 1.57  
[.062]  
19.81± 0.20  
[.780± .008]  
3.76± 0.38  
[.142± .015]  
0.0381 [.0015] -A-  
34.04  
[1.340]  
0.51  
[.020]  
P
K G _248_0  
Notes: Unless otherwise specified  
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.  
2. Primary dimensions are mm. Alternate dimensions are inches.  
3. Pins: D = drain, S = source, G = gate  
4. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]  
Find the latest and most complete information about products and packaging at the Infineon Internet page  
http://www.infineon.com/products  
Data Sheet  
8
2004-04-05  
PTF080901  
Package Outline Specifications  
Package 31248  
( 45° X 2.72  
[.107])  
C
L
4.83± 0.51  
[.190± .020]  
D
LID 9.40+ 0.10  
19.43± 0.51  
[.765± .020]  
-0.15  
[.370+ .004  
]
-.006  
C
L
9.78  
[.385]  
G
2X 12.70  
[.500]  
0.51  
[.020]  
19.81± 0.20  
[.780± .008]  
S PH 1.58  
[.062]  
1.02  
[.040]  
0.0381 [.0015] -A-  
S
20.57  
[.810]  
3.61± 0.38  
[.142± .015]  
P
K G _248_1  
Notes: Unless otherwise specified  
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.  
2. Primary dimensions are mm. Alternate dimensions are inches.  
3. Pins: D = drain, S = source, G = gate  
4. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]  
Find the latest and most complete information about products and packaging at the Infineon Internet page  
http://www.infineon.com/rfpower  
Data Sheet  
9
2004-04-05  
PTF080901  
Confidential - Limited Internal  
Revision History:  
2004-04-05  
Data Sheet  
Previous Version:  
2004-01-02, Data Sheet  
Page  
1,8,9  
6,7  
Subjects (major changes since last revision)  
Add information about PTF080901F, new package outline diagrams  
Circuit information updated.  
We Listen toYour Comments  
Any information within this document that you feel is wrong, unclear or missing at all?  
Your feedback will help us to continuously improve the quality of this document.  
Please send your proposal (including a reference to this document) to:  
highpowerRF@infineon.com  
To request other information, contact us at:  
+1 877 465 3667 (1-877-GOLDMOS) USA  
or +1 408 776 0600 International  
GOLDMOS® is a registered trademark of Infineon Technologies AG.  
Edition 2004-04-05  
Published by InfineonTechnologies AG,  
St.-Martin-Strasse 53,  
81669 München, Germany  
© InfineonTechnologies AG 2003.  
All Rights Reserved.  
Attention please!  
The information herein is given to describe certain components and shall not be considered as a guarantee of  
characteristics.  
Terms of delivery and rights to technical change reserved.  
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,  
descriptions and charts stated herein.  
Information  
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon  
Technologies Office (www.infineon.com/rfpower).  
Warnings  
Due to technical requirements components may contain dangerous substances. For information on the types in question  
please contact your nearest Infineon Technologies Office.  
Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of  
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support  
device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are  
intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it  
is reasonable to assume that the health of the user or other persons may be endangered.  
10  

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