概述
数据手册1ED3120MU12H 概述
EiceDRIVER⢠1ED31xxMU12H Compact
1ED3120MU12H 数据手册
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PDF下载1ED31xxMU12H (1ED-X3 Compact)
EiceDRIVER™ 1ED31xxMU12H Compact
Datasheet
Single-channel 5.7 kV (rms) isolated gate driver IC with active Miller clamp or
separate output
Feature list
•
•
•
•
•
•
•
•
•
•
Single channel isolated gate driver
For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs
Up to 14.0 A typical peak output current
40 V absolute maximum output supply voltage
High common-mode transient immunity CMTI > 200 kV/µs
Separate source and sink outputs or active Miller clamp with active shutdown and short circuit clamping
Galvanically isolated coreless transformer gate driver
3.3 V and 5 V input supply voltage
Suitable for operation at high ambient temperature and in fast switching applications
UL 1577 certification VISO = 5.7 kV (rms) for 1 min (File E311313)
Potential applications
•
•
•
•
•
•
•
AC and brushless DC motor drives
High voltage DC-DC converter and DC-AC inverter
Induction heating resonant application
UPS-systems
Commercial air-conditioning (CAC)
Server and telecom switched mode power supplies (SMPS)
Solar inverters, e.g. for 1500 V (DC) systems
PG-DSO-8
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Device information
Product type
Typical output current and
configuration
UVLO
(VUVLOL2,min
Certification
(File E311313)
Package
)
1ED3120MU12H
1ED3121MU12H
1ED3122MU12H
1ED3123MU12H
1ED3124MU12H
1ED3131MU12H
5.5 A separate source and sink
5.5 A separate source and sink
10.0 A and 3.0 A clamp
8.0 V
10.5 V
8.0 V
UL
UL
UL
UL
UL
UL
PG-DSO-8
PG-DSO-8
PG-DSO-8
PG-DSO-8
PG-DSO-8
PG-DSO-8
14.0 A separate source and sink
14.0 A separate source and sink
8.0 V
10.5 V
10.5 V
5.5 A separate source and sink, 180 ns
minimum input pulse suppression
time
Datasheet
www.infineon.com/gdisolated
Please read the Important Notice and Warnings at the end of this document
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Datasheet
Description
Description
The 1ED31xxMU12H (1ED-X3 Compact) gate driver ICs are galvanically isolated single channel gate driver ICs for
IGBT, MOSFET and SiC MOSFET in PG-DSO-8 package. They provide a typical output current of up to 14.0 A on
separate source and sink pins or a typical output current of 10.0 A with an additional 3.0 A active Miller clamp.
The input logic pins operate on a wide input voltage range from 3 V to 15 V using CMOS threshold levels to
support 3.3 V microcontrollers.
Data transfer across the isolation barrier is realized by the coreless transformer technology.
All variants have logic input and driver output undervoltage lockout (UVLO), and active shutdown.
The gate drivers are certified according to UL 1577
VCC1
VCC2,H
OUT+
IN+
IN-
Single channel
EiceDRIVERTM with separate
output
OUT-
GND1
VCC1
VEE2,H
VCC2,L
Control
OUT+
IN+
IN-
Single channel
EiceDRIVERTM with separate
output
OUT-
GND1
VEE2,L
Figure 1
Typical application using separate output variant
Datasheet
2
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EiceDRIVER™ 1ED31xxMU12H Compact
Datasheet
Table of contents
Table of contents
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1
2
3
Block diagram reference . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Related products . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Pin configuration and description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4
4.1
4.2
4.2.1
4.2.2
4.2.3
4.2.4
4.3
Functional description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Supply . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Protection features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Undervoltage lockout (UVLO) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Active shut-down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Short circuit clamping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
Active Miller clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
Non-inverting and inverting inputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Driver outputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.4
5
5.1
5.2
5.3
5.3.1
5.3.2
5.3.3
5.3.4
5.3.5
Electrical characteristics and parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Operating parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Power supply . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Logic input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Gate driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Dynamic characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Active shut down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6
Insulation characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
6.1
Recognized under UL 1577 (File E311313) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
7
Package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Datasheet
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Datasheet
1 Block diagram reference
1
Block diagram reference
VCC1
VCC2
UVLO
UVLO
VCC2
input
filter
IN+
&
&
active
OUT+
OUT-
TX
RX
GND1
VCC1
filter
Shoot
through
protection
input
filter
IN-
GND1
VEE2
Figure 2
Block diagram separate source and sink output variants
VCC1
VCC2
OUT
UVLO
UVLO
&
input
filter
IN+
&
active
TX
RX
VEE2
GND1
VCC1
filter
VCC2
2V
input
filter
IN-
CLAMP
VEE2
&
GND1
Figure 3
Block diagram output with CLAMP variants
Datasheet
4
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Datasheet
2 Related products
2
Related products
Note:
Please consider the gate driver IC power dissipation and insulation requirements for the selected
power switch and operating condition.
Product group Product name
Description
TRENCHSTOP™
IGBT Discrete
IKQ75N120CS6
IKW15N120BH6
IHW40N120R5
High Speed 1200 V, 75 A IGBT with anti-parallel diode in TO247-3
High Speed 1200 V, 15 A IGBT with anti-parallel diode in TO247
Reverse conducting 1200 V, 40 A IH IGBT with integrated diode in
TO247
CoolSiC™ SiC
IMBF170R650M1
IMBG120R045M1H
IMZ120R350M1H
IMZA65R027M1H
IMW65R107M1H
1700 V, 650 mΩ SiC MOSFET in TO263-7 package
1200 V, 45 mΩ SiC MOSFET in TO263-7 package
1200 V, 350 mΩ SiC MOSFET in TO247-4 package
650 V, 27 mΩ SiC MOSFET in TO247-4 package
650 V, 107 mΩ SiC MOSFET in TO247-3 package
EasyPACK™ 1B 1200 V / 45 mΩ sixpack module
EasyDUAL™ 2B 1200 V, 6 mΩ half-bridge module
MOSFET Discrete
CoolSiC™ SiC
MOSFET Module
FS45MR12W1M1_B11
FF6MR12W2M1_B11
F3L11MR12W2M1_B74 EasyPACK™ 2B 1200 V, 11 mΩ 3-Level module in Advanced NPC
(ANPC) topology
F4-23MR12W1M1_B11 EasyPACK™ 1B 1200 V, 23 mΩ fourpack module
TRENCHSTOP™
IGBT Modules
F4-200R17N3E4
FS150R17N3E4
FF650R17IE4
EconoPACK™ 3 1700 V, 200 A fourpack IGBT module
EconoPACK™ 3 1700 V, 150 A sixpack IGBT module
PrimePACK™ 3 1700 V, 650 A half-bridge dual IGBT module
PrimePACK™ 3 1700 V, 1000 A half-bridge dual IGBT module
PrimePACK™ 3+ 1700 V, 1200 A dual IGBT module
PrimePACK™ 3+ 1700 V, 1500 A dual IGBT module
PrimePACK™ 3 1700 V, 1500 A dual IGBT module
PrimePACK™ 3+ 1700 V, 1800 A dual IGBT module
FF1000R17IE4
FF1200R17IP5
FF1500R17IP5
FF1500R17IP5R
FF1800R17IP5
FP10R12W1T7_B11
EasyPIM™ 1B 1200 V, 10 A three phase input rectifier PIM IGBT
module
FS100R12W2T7_B11
FP150R12KT4_B11
FS200R12KT4R_B11
EasyPACK™ 2B 1200 V, 100 A sixpack IGBT module
EconoPIM™ 3 1200V three-phase PIM IGBT module
EconoPACK™ 3 1200 V, 200 A sixpack IGBT module
Table 1
Evaluation boards
Part number
Description
EVAL-1ED3121MX12H
EVAL-1ED3122MX12H
EVAL-1ED3124MX12H
Half-bridge evaluation board for 1ED3121MU12H
Half-bridge evaluation board for 1ED3122MU12H
Half-bridge evaluation board for 1ED3124MU12H
Datasheet
5
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Datasheet
3 Pin configuration and description
3
Pin configuration and description
Pin configuration PG-DSO-8 of 1ED3121MU12H, 1ED3124MU12H, 1ED3120MU12H, 1ED3123MU12H and
1ED3131MU12H
Table 2
Pin configuration
Pin No. Name
Function
1
2
3
4
5
6
7
8
VCC1
IN+
Positive logic supply
Non-inverted driver input (active high)
Inverted driver input (active low)
Logic ground
IN-
GND1
VEE2
OUT-
OUT+
VCC2
Power ground
Driver sink output
Driver source output
Positive power supply output side
1
2
3
4
VCC1
IN+
VCC2
OUT+
OUT-
VEE2
8
7
6
5
IN-
GND1
Figure 4
PG-DSO-8 (top view)
Pin configuration PG-DSO-8 of 1ED3122MU12H
Table 3
Pin configuration
Pin No. Name
Function
1
2
3
4
5
6
7
8
VCC1
IN+
Positive logic supply
Non-inverted driver input (active high)
Inverted driver input (active low)
Logic ground
IN-
GND1
VEE2
CLAMP
OUT
VCC2
Power ground
Active Miller clamp output
Driver source and sink output
Positive power supply output side
Datasheet
6
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Datasheet
3 Pin configuration and description
1
2
3
4
VCC1
IN+
VCC2
OUT
8
7
6
5
IN-
CLAMP
VEE2
GND1
Figure 5
PG-DSO-8 (top view)
Pin description
•
•
•
VCC1: Logic input supply voltage of 3.3 V up to 15 V wide operating range
GND1: Ground connection of input circuit.
IN+: Non-inverted control signal for driver output. An internal filter provides robustness against noise at IN+.
An internal weak pull-down resistor favors off-state.
•
•
•
•
IN-: Inverted control signal for driver output. An internal filter provides robustness against noise at IN-. An
internal weak pull-up resistor favors off-state.
VCC2: Positive power supply pin of output driving circuit. A proper blocking capacitor has to be placed close
to this supply pin.
VEE2: Reference ground of the output driving circuit. In case of a bipolar supply (positive and negative
voltage referred to IGBT emitter) this pin is connected to the negative supply voltage.
OUT+: Driver source output pin to turn on external IGBT. During on-state the driving output is switched to
VCC2. Switching of this output is controlled by IN+ and IN-. This output will also be turned off at an UVLO
event.
•
•
•
OUT-: Driver sink output pin to turn off external IGBT. During off-state the driving output is switched to VEE2.
Switching of this output is controlled by IN+ and IN-. In case of UVLO an active shut down keeps the output
voltage at a low level.
OUT: Combined source and sink output pin to external IGBT. The output voltage will be switched between
VCC2 and VEE2. Switching of this output is controlled by IN+ and IN-. In case of an UVLO event this output
will be switched off and an active shut down keeps the output voltage at a low level.
CLAMP: The clamp function ties its output to VEE2 during off-state. It activates as soon as the gate voltage
has dropped below 2.0 V referred to VEE2 aꢀer a turn-off command. Connect this pin directly to the IGBT
gate to avoid parasitic turn-on of the connected IGBT.
Datasheet
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Datasheet
4 Functional description
4
Functional description
The 1ED31xxMU12H (1ED-X3 Compact) are general purpose IGBT gate drivers. Basic control and protection
features support fast and easy design of highly reliable systems.
The integrated galvanic isolation between control input logic and driving output stage grants additional
safety. Its input voltage supply range supports the direct connection of various signal sources like DSPs and
microcontrollers.
4.1
Supply
The driver can operate over a wide supply voltage range, either unipolar or bipolar.
10R
+3.3 V
VCC1
OUT+
OUT-
VCC2
100n
3R3
SGND
IN
GND1
IN+
+15 V
4µ7
0 V
4µ7-8 V
IN-
VEE2
Figure 6
Application example bipolar supply
With bipolar supply the driver is typically operated with a positive voltage of 15 V at VCC2 and a negative voltage
of -8 V at VEE2 relative to the emitter of the IGBT. Negative supply can help to prevent a dynamic turn on due to
the additional charge which is generated from IGBT’s input capacitance.
10R
+3.3 V
VCC1
OUT
100n
CLAMP
SGND
GND1
+15 V
IN
VCC2
IN+
IN-
4µ7
VEE2
Figure 7
Application example unipolar supply
For unipolar supply configuration the driver is typically supplied with a positive voltage of 15 V at VCC2. In this
case, careful evaluation for turn off gate resistor selection is recommended to avoid dynamic turn on. Both
supply options are usable with either output configuration separate source and sink as well as output with
active Miller clamp.
Datasheet
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Datasheet
4 Functional description
4.2
Protection features
4.2.1
Undervoltage lockout (UVLO)
IN+
VUVLOH1
VUVLOL1
VCC1
VUVLOH2
VUVLOL2
VCC2
OUT
Figure 8
UVLO behavior
To ensure correct switching of IGBTs the device is equipped with an undervoltage lockout for input and output
independently. Operation starts only aꢀer both VCC levels have increased beyond the respective VUVLOH levels.
If the power supply voltage VVCC1 of the input chip drops below VUVLOL1 a turn-off signal is sent to the output
chip before power-down. The IGBT is switched off and the signals at IN+ and IN- are ignored until VVCC1 reaches
the power-up voltage VUVLOH1 again.
If the power supply voltage VVCC2 of the output chip goes down below VUVLOL2 the IGBT is switched off and
signals from the input chip are ignored until VVCC2 reaches the power-up voltage VUVLOH2 again.
Note:
VVCC2 is always referred to VEE2 and does not differentiate between unipolar or bipolar supply.
4.2.2
Active shut-down
The active shut-down feature ensures a safe IGBT off-state in case the output chip is not connected to the power
supply or an undervoltage lockout is in effect. The IGBT gate is clamped at OUT- or CLAMP to VEE2.
4.2.3
Short circuit clamping
During short circuit the IGBTs gate voltage tends to rise because of the feedback via the Miller capacitance. An
internal protection circuit at OUT+ or CLAMP limits this voltage to a value slightly higher than the supply voltage.
A maximum current of 500 mA may be fed back to the supply through this path for 10 μs. If higher currents are
expected or tighter clamping is desired external Schottky diodes may be added.
4.2.4
Active Miller clamp
In a half bridge configuration the switched off IGBT tends to dynamically turn on during turn on phase of the
opposite IGBT. A Miller clamp allows sinking the Miller current across a low impedance path in this high dV/dt
situation. Therefore in many applications, the use of a negative supply voltage can be avoided. During turn-off,
the gate voltage is monitored and the clamp output is activated when the gate voltage drops below typical 2 V
(referred to VEE2). The clamp is designed for a Miller current in the same range as the nominal output current.
Datasheet
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Datasheet
4 Functional description
4.3
Non-inverting and inverting inputs
IN+
IN-
OUT
Figure 9
Logic input to output switching behavior
There are two possible input modes to control the IGBT. At non-inverting mode IN+ controls the driver output
while IN- is set to low. At inverting mode IN- controls the driver output while IN+ is set to high. A minimum input
pulse width is defined to filter occasional glitches.
4.4
Driver outputs
The output driver section uses MOSFETs to provide a rail-to-rail output. This feature permits that tight control
of gate voltage during on-state and short circuit can be maintained as long as the driver’s supply is stable. Due
to the low internal voltage drop, switching behavior of the IGBT is predominantly governed by the gate resistor.
Furthermore, it reduces the power to be dissipated by the driver.
Datasheet
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5 Electrical characteristics and parameters
5
Electrical characteristics and parameters
5.1
Absolute maximum ratings
Absolute maximum ratings are defined as ratings, which when being exceeded may lead to destruction of the
integrated circuit. Unless otherwise noted all parameters refer to GND1.
Table 4
Absolute maximum ratings
Parameter
Symbol
Values
Max.
2300
Unit Note or test
condition
Min.
Input to output offset voltage
VOFFSET
–
V
VVEE2,max-VVEE2,min
with VVEE2,max ≥ VGND1
1) 2)
≥ VVEE2,min
3)
Power supply output side
VVCC2
-0.3
40
V
3)
Gate driver output (OUT+, OUT-, OUT, CLAMP) VOUT
VEE2 - 0.3 VCC2 + 0.3 V
Power supply input side
VVCC1
VIN
-0.3
-0.3
-40
-55
–
17
V
VCC1 - GND1
IN - GND1
–
Logic input voltages (IN+, IN-)
Junction temperature
6.5
150
150
100
700
88
V
TJ
°C
Storage temperature
TStg
°C
–
Power dissipation (input side)
Power dissipation (output side)
Thermal resistance junction to ambient
PD,IN
PD,OUT
RthJA,OUT
ΨJtop
mW
mW
K/W
K/W
TA = 65°C4)
TA = 65°C5)
–
–
TA = 85°C 300 mil,
1s0p, PJ = 266 mW
Characterization parameter junction to
package top input side
–
6
ESD robustness
VESD,HBM
ESD,CDM
–
–
4
kV
–
Human body model6)
TC 1000
Charged device
model7)
1) for functional operation only
2) See also Chapter 6 on page 17
3) With respect to VEE2
4) IC input-side power dissipation is derated linearly with 11.4 mW/°C above 141 °C
5) IC output-side power dissipation is derated linearly with 11.4 mW/°C above 88 °C
6) According to ANSI/ESDA/JEDEC-JS-001-2017 (discharging a 100 pF capacitor through a 1.5 kΩ series
resistor).
7) According to ANSI/ESDA/JEDEC-JS-002-2014 (TC = test condition in volt)
Figure 10
Reference layout for thermal data (Copper thickness 35 μm)
This PCB layout represents the reference layout used for the thermal characterization of the 300 mil package.
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Datasheet
5 Electrical characteristics and parameters
5.2
Operating parameters
Within the operating range the IC operates as described in the functional description. Unless otherwise noted
all parameters refer to GND1.
Table 5
Electrical characteristics
Parameter
Symbol
Values
Unit Note or test
condition
Min.
Max.
1)
Power supply output side
Power supply input side
VVCC2
VVCC1
VIN
10
35
15
V
3.1
-0.3
–
V
–
Logic input voltages (IN+, IN-)
Switching frequency
5.5
1
V
–
fSW
MHz
°C
max PD applies
Ambient temperature
TA
-40
-200
125
200
–
Common mode transient immunity (CMTI)
1) With respect to VEE2
CMTI
kV/µs VOFFSET,test = 1500 V
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EiceDRIVER™ 1ED31xxMU12H Compact
Datasheet
5 Electrical characteristics and parameters
5.3
Electrical characteristics
Note:
The electrical characteristics include the spread of values in supply voltages, load and junction
temperatures given below. Typical values represent the median values at TA = 25°C. Unless otherwise
noted all voltages are given with respect to their respective GND (GND1 for pins 1 to 3 and VEE2 for
pins 6 to 8).
5.3.1
Power supply
Table 6
Power supply
Parameter
Symbol
Values
Typ.
Unit Note or test
condition
Min.
Max.
3.1
UVLO threshold input side (on)
UVLO threshold input side (off)
UVLO hysteresis input side
VUVLOH1
VUVLOL1
VHYS1
–
–
–
V
V
V
V
V
–
–
–
2.5
0.1
–
–
0.2
–
–
UVLO threshold output side (on) VUVLOH2,1
10.0
–
1ED3120MU12H,
1ED3122MU12H,
1ED3123MU12H
UVLO threshold output side (off) VUVLOL2,1 8.0
UVLO threshold output side (on) VUVLOH2,2
UVLO threshold output side (off) VUVLOL2,2 10.5
–
–
–
–
12.5
–
V
V
1ED3121MU12H,
1ED3124MU12H,
1ED3131MU12H
UVLO hysteresis output side
Quiescent current input side
Quiescent current output side
Start up time
VHYS2
IQ1
0.8
–
–
–
V
–
–
1.1
2
mA
mA
µs
ns
static, output low
IQ2
–
–
1)
1)
tSTART
tUVLOflt
–
2.5
–
20
–
UVLO detection filter time
50
1) Parameter is not subject to production test - verified by design/characterization
5.3.2
Logic input
Table 7
Logic input
Parameter
Symbol
Values
Typ.
Unit Note or test
condition
Min.
Max.
1.1
IN+, IN- low input threshold
voltage
VIN,L
VIN,H
–
–
–
V
V
–
IN+, IN- high input threshold
voltage
2.5
–
–
IN+, IN- low/high hysteresis
IN+, IN- input current
IN+ pull down resistor
IN- pull up resistor
VIN,HYS
IIN
0.5
–
0.8
–
–
V
–
100
–
µA
kΩ
kΩ
VVCC1 = 5 V; VIN ≤ VVCC1
RIN,PD
RIN,PU
–
75
75
–
–
–
–
Datasheet
13
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EiceDRIVER™ 1ED31xxMU12H Compact
Datasheet
5 Electrical characteristics and parameters
5.3.3
Gate driver
All gate driver output parameters valid for VCC2 = 15 V supply voltage unless specified otherwise.
Table 8
Gate driver
Parameter
Symbol
Values
Typ.
Unit Note or test
condition
Min.
1ED3120MU12H, 1ED3121MU12H, 1ED3131MU12H
Max.
High level output peak current
IOUT,H
2.0
5.5
–
A
1) VCC2-OUT+ = 15 V,
Output on
High level output on resistance
Low level output peak current
RDSON,H
IOUT,L
0.60
2.0
0.95
5.5
1.45
–
Ω
A
IOUT,H = 0.1 A
1) OUT--VEE2 = 15 V,
Output off
Low level output on resistance
1ED3122MU12H
RDSON,L
IOUT,H
0.50
4.0
0.75
10.0
1.05
–
Ω
A
IOUT,L = 0.1 A
High level output peak current
1) VCC2-OUT = 15 V,
Output on
High level output on resistance
Low level output peak current
RDSON,H
IOUT,L
0.30
4.0
0.55
9.0
0.85
–
Ω
A
IOUT,H = 0.1 A
1) OUT-VEE2 = 15 V,
Output off
Low level output on resistance
Low level clamp peak current
Low level clamp on resistance
CLAMP threshold voltage
RDSON,L
ICLAMP,L
0.30
2.0
0.45
3.0
0.55
2.0
–
0.65
–
Ω
A
IOUT,L = 0.1 A
1)
V
= 2.0 V
CLAMP
RDSON,CLP 0.33
0.76
2.4
80
Ω
V
ICLAMP,L = 0.1 A
VCLAMP
tCLPDLY
1.6
–
CLAMP-VEE2
1)
CLAMP comparator to CLAMP
activation delay time
ns
V
≤ 2.0 V
CLAMP
1ED3123MU12H, 1ED3124MU12H
High level output peak current
IOUT,H
6.0
13.5
–
A
1) VCC2-OUT+ = 15 V,
Output on
High level output on resistance
Low level output peak current
RDSON,H
IOUT,L
0.27
6.0
0.45
14.0
0.65
–
Ω
A
IOUT,H = 0.1 A
1) OUT--VEE2 = 15 V,
Output off
Low level output on resistance
all variants
RDSON,L
0.21
0.35
0.60
Ω
IOUT,L = 0.1 A
High level output voltage
ΔVOUT,H
ΔVOUT,L
VCLP
–
–
–
–
–
–
0.3
0.1
2.0
V
V
V
VCC2-VOUT,H; IOUT
=
=
20 mA
Low level output voltage
VCC2-VOUT,H; IOUT
20 mA
Short circuit clamp voltage
between OUT+/CLAMP and VCC2
Output on, IOUT =
500 mA, t < 10 µs
1) Parameter is not subject to production test - verified by design/characterization
Datasheet
14
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EiceDRIVER™ 1ED31xxMU12H Compact
Datasheet
5 Electrical characteristics and parameters
5.3.4
Dynamic characteristics
Dynamic characteristics are measured with VVCC1 = 5 V and VVCC2 = 15 V.
VIN,H
IN+
VIN,L
80%
20%
90%
10%
OUT
tPDON
tPDOFF
tRISE
tFALL
Figure 11
Propagation delay, rise and fall time
Filter and propagation delay characteristics (1ED3131MU12H only)
Table 9
Parameter
Symbol
Values
Typ.
Unit Note or test
condition
Min.
Max.
280
Input to output propagation
delay ON
tPDON
–
–
270
ns
CLOAD = 100 pF, IN
turn-on threshold to
10% output on
Input to output propagation
delay OFF
tPDOFF
270
280
ns
CLOAD = 100 pF, IN
turn-off threshold to
90% output off
Input to output propagation
delay distortion
tPDISTO
tINFLT
-15
0
–
15
–
ns
ns
tPDOFF - tPDON
Input pulse suppression time
(filter time)
180
shorter pulses will
not propagate to the
output
Minimum input pulse length
tMININ
tPD,T
–
–
–
–
220
14
ns
ns
–
1)
Input to output propagation
delay variation due to
temperature
1)
Input to output propagation
delay distortion variation due to
temperature
tPDISTO,T
–
–
–
–
5
ns
ns
1) 2)
Input to output, part to part
propagation delay ON variation
|tPDon,P2P
|
15
C
= 100 pF
LOAD
1) Parameter is not subject to production test - verified by design/characterization
Table 10
Filter and propagation delay characteristics (all other variants)
Parameter
Symbol
Values
Typ.
Unit Note or test
condition
Min.
Max.
100
Input to output propagation
delay ON
tPDON
80
80
90
ns
CLOAD = 100 pF, IN
turn-on threshold to
10% output on
Input to output propagation
delay OFF
tPDOFF
90
100
ns
CLOAD = 100 pF, IN
turn-off threshold to
90% output off
Datasheet
15
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Datasheet
5 Electrical characteristics and parameters
Table 10
Filter and propagation delay characteristics (all other variants) (continued)
Parameter
Symbol
Values
Typ.
Unit Note or test
condition
Min.
Max.
Input to output propagation
delay distortion
tPDISTO
tINFLT
-5
0
–
5
–
ns
ns
tPDOFF - tPDON
Input pulse suppression time
(filter time)
30
shorter pulses will
not propagate to the
output
Minimum input pulse length
tMININ
tPD,T
–
–
–
–
40
14
ns
ns
–
1)
Input to output propagation
delay variation due to
temperature
1)
Input to output propagation
delay distortion variation due to
temperature
tPDISTO,T
–
–
–
–
3
7
ns
ns
1) 2)
Input to output, part to part
propagation delay ON variation
|tPDon,P2P
|
C
= 100 pF
LOAD
1) Parameter is not subject to production test - verified by design/characterization
2) Absolute value at same ambient and operating conditions.
Table 11
Dynamic output characteristics
Parameter
Symbol
Min.
Values
Typ.
Unit Note or test
condition
Max.
Rise time
Fall time
Rise time
Fall time
tRISE
tFALL
tRISE
tFALL
–
–
–
–
–
–
–
–
15
15
30
30
ns
ns
ns
ns
CLOAD = 100 pF
CLOAD = 100 pF
CLOAD = 1 nF
CLOAD = 1 nF
5.3.5
Active shut down
Table 12
Active shut down
Symbol
Parameter
Values
Typ.
Unit Note or test
condition
Min.
Max.
Active shut down voltage, cold
Active shut down voltage, hot
VACTSD,C
VACTSD,H
–
–
–
–
1.9
V
V
IOUT = 10 mA; VCC2
unsupplied; TA < 20°C
1)
1.7
I
= 10 mA; VCC2
OUT-
unsupplied; TA ≥ 20°C
1) Parameter is not subject to production test - verified by design/characterization
Datasheet
16
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EiceDRIVER™ 1ED31xxMU12H Compact
Datasheet
6 Insulation characteristics
6
Insulation characteristics
Table 13
Safety limiting values
This coupler is suitable for rated insulation only within the given safety limiting values. Compliance with the
safety limiting values shall be ensured by means of suitable protective circuits.
Description
Symbol
TS
Characteristic
Unit
°C
Maximum ambient safety temperature
Maximum input-side power dissipation at TA = 25°C1)
Maximum output-side power dissipation at TA = 25°C2)
150
PSI
100
mW
mW
PSO
1314
1) IC input-side power dissipation is derated linearly with 11.4 mW/°C above 141 °C
2) IC output-side power dissipation is derated linearly with 8.8 mW/°C above 25°C
Table 14
Package specific insulation characteristics
Symbol
CLR
Description
Characteristic
Unit
mm
mm
–
Minimum external clearance
Minimum external creepage
Minimum comparative tracking index
Insulation capacitance
>8
CPG
CTI
CIO
>8
400
0.9
pF
6.1
Recognized under UL 1577 (File E311313)
Table 15
Recognized under UL 1577
Description
Symbol
VISO
Characteristic
Unit
Insulation withstand voltage/1 min
Insulation test voltage/1 s
5700
6840
V (rms)
V (rms)
VISO, TEST
Datasheet
17
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Datasheet
7 Package dimensions
7
Package dimensions
1)
1)
6.4
7.5
0.81±0.4
Seating plane
Coplanarity
10.3
2)
1.27
0.4±0.08
8
5
Pin1 Marking
1
4
1) Does not include plastic or metal protrusion of 0.15 max. per side
2) Dambar protrusion shall be maximum 0.1mm total in excess of lead width
All dimensions are in units mm
The drawing is in compliance with ISO 128-30, Projection Method 1 [
]
Figure 12
PG-DSO-8 (Plastic (green) dual small outline package, 300 mil)
Datasheet
18
v2.1
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EiceDRIVER™ 1ED31xxMU12H Compact
Datasheet
Revision history
Revision history
Revision history
Reference
Description
v2.1
•
•
•
RDSON parameter values update
Safety limiting values derived from 1ED31xxMC12H datasheet
Update to ESD,CDM footnote and package outline drawing
v2.0
v1.0
Final datasheet with parameter updates
Preliminary datasheet with parameter updates
Datasheet
19
v2.1
2021-03-01
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2021-03-01
Published by
IMPORTANT NOTICE
WARNINGS
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”).
With respect to any examples, hints or any typical
values stated herein and/or any information regarding
the application of the product, Infineon Technologies
hereby disclaims any and all warranties and liabilities
of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any
third party.
In addition, any information given in this document is
subject to customer’s compliance with its obligations
stated in this document and any applicable legal
requirements, norms and standards concerning
customer’s products and any use of the product of
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dangerous substances. For information on the types
in question please contact your nearest Infineon
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Infineon Technologies’ products may not be used in
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81726 Munich, Germany
©
2021 Infineon Technologies AG
All Rights Reserved.
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Email: erratum@infineon.com
Document reference
IFX-kwb1571987036400
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evaluate the suitability of the product for the intended
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1ED3120MU12H 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| 1ED3121MC12H | INFINEON | EiceDRIVER⢠1ED31xxMC12H Compact | 获取价格 |
|
| 1ED3121MU12H | INFINEON | EiceDRIVER⢠1ED31xxMU12H Compact | 获取价格 |
|
| 1ED3122MC12H | INFINEON | EiceDRIVER⢠1ED31xxMC12H Compact | 获取价格 |
|
| 1ED3122MU12H | INFINEON | EiceDRIVER⢠1ED31xxMU12H Compact | 获取价格 |
|
| 1ED3123MC12H | INFINEON | EiceDRIVER⢠1ED31xxMC12H Compact | 获取价格 |
|
| 1ED3123MU12H | INFINEON | EiceDRIVER⢠1ED31xxMU12H Compact | 获取价格 |
|
| 1ED3124MC12H | INFINEON | EiceDRIVER⢠1ED31xxMC12H Compact | 获取价格 |
|
| 1ED3124MU12F | INFINEON | EiceDRIVER⢠1ED312xMU12F Compact | 获取价格 |
|
| 1ED3124MU12H | INFINEON | EiceDRIVER⢠1ED31xxMU12H Compact | 获取价格 |
|
| 1ED3125MU12F | INFINEON | EiceDRIVER⢠1ED312xMU12F Compact | 获取价格 |
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