概述
数据手册BAS40-06T 概述
Surface Mount Schottky Barrier Diodes 表面贴装肖特基势垒二极管
BAS40-06T 数据手册
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PDF下载BAS40T/-04T/-05T/-06T
Surface Mount Schottky Barrier Diodes
SOT-523
Features
Low forward voltage drop.
Fast switching.
Ultra-small surface mount package.
PN junction guard ring for transient and
ESD protection.
Dimensions in inches and (millimeters)
Applications
General purpose switching application.
BAS40-05T
BAS40-06T
BAS40T
BAS40-04T
Ordering Information
Type No.
Marking
Package Code
BAS40T
43
44
45
46
SOT-523
SOT-523
SOT-523
SOT-523
BAS40-04T
BAS40-05T
BAS40-06T
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Units
VRRM
VRWM
VR
Peak repetitive reverse voltage
Working peak reverse voltage
DC reverse voltage
40
V
VR(RMS)
IF
RMS reverse voltage
28
V
Forward continuous voltage
200
mA
Non-repetitive peak forward surge current
@t=1.0s
IFSM
mA
600
Pd
Power dissipation
150
mW
℃/W
℃
RθJA
Tj,Tstg
Thermal resistance junction to ambient
Junction and Storage Temperature
833
-65~150
http://www.luguang.cn
mail:lge@luguang.cn
BAS40T/-04T/-05T/-06T
Surface Mount Schottky Barrier Diodes
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
Reverse breakdown voltage
V(BR)R
IR=10μA
40
V
Leakage current
Forward voltage
IR
VR=30V
200
nA
IF=1.0mA,tp<300μS
IF=40mA,tp<300μS
380
VF
mV
1000
Typical total capacitance
Reverse recovery Time
CT
trr
VR=0V,f=1MHz
5.0
5.0
pF
ns
IF=IR=10mA,Irr=0.1*IR,RL=100Ω
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
http://www.luguang.cn
mail:lge@luguang.cn
BAS40-06T 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| BAS40-06T-13 | DIODES | Rectifier Diode, Schottky, 2 Element, 0.2A, 40V V(RRM), Silicon, ULTRA SMALL, PLASTIC PACKAGE-3 | 获取价格 |
|
| BAS40-06T-13-F | DIODES | Rectifier Diode, | 获取价格 |
|
| BAS40-06T-7 | DIODES | SURFACE MOUNT SCHOTTKY BARRIER DIODE | 获取价格 |
|
| BAS40-06T-7-F | DIODES | SURFACE MOUNT SCHOTTKY BARRIER DIODE | 获取价格 |
|
| BAS40-06T-H | FORMOSA | Status : Active; Package : SOT-523; IO(mA) : 200; VRRM(V) : 40; IFSM(A) : 0.6; VF Max.(V)@IF : 1; IF(mA) : 40; VR(V) : 30; AEC-Q101Qualified : No; | 获取价格 |
|
| BAS40-06T-TP | MCC | 暂无描述 | 获取价格 |
|
| BAS40-06T/R | WTE | 0.12A, 40V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3 | 获取价格 |
|
| BAS40-06T/R | NXP | 0.12A, 40V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3 | 获取价格 |
|
| BAS40-06TP | MCC | Rectifier Diode, Schottky, 2 Element, 0.2A, 40V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3 | 获取价格 |
|
| BAS40-06V | RECTRON | Reverse Voltage Vr : 40 V;Forward Current Io : 0.2 A;Forward Voltage Vf : 0.38 V;Reverse Current Ir : 0.2 uA;Recovery Time : 5 nS;Package / Case : SOT-23;Mounting Style : SMD/SMT;Certified (AEC-Q101...etc) : AEC-Q101 | 获取价格 |
|
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