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BAS40-06T

更新时间：2025-07-09 12:30:59

品牌：LGE

描述：Surface Mount Schottky Barrier Diodes

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中文翻译

免费 PCB/SMT

概述
数据手册

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BAS40-06T 概述

Surface Mount Schottky Barrier Diodes 表面贴装肖特基势垒二极管

BAS40-06T 数据手册

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BAS40T/-04T/-05T/-06T

Surface Mount Schottky Barrier Diodes

SOT-523

Features

Low forward voltage drop.

Fast switching.

Ultra-small surface mount package.

PN junction guard ring for transient and

ESD protection.

Dimensions in inches and (millimeters)

Applications

General purpose switching application.

BAS40-05T

BAS40-06T

BAS40T

BAS40-04T

Ordering Information

Type No.

Marking

Package Code

BAS40T

SOT-523

BAS40-04T

BAS40-05T

BAS40-06T

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

Units

V_RRM

V_RWM

V_R

Peak repetitive reverse voltage

Working peak reverse voltage

DC reverse voltage

V_R(RMS)

I_F

RMS reverse voltage

Forward continuous voltage

200

Non-repetitive peak forward surge current

@t=1.0s

I_FSM

600

P_d

Power dissipation

150

℃/W

℃

R_θJA

T_j,T_stg

Thermal resistance junction to ambient

Junction and Storage Temperature

833

-65~150

http://www.luguang.cn

mail:lge@luguang.cn

BAS40T/-04T/-05T/-06T

Surface Mount Schottky Barrier Diodes

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Test conditions

MIN

MAX

UNIT

Reverse breakdown voltage

V_(BR)R

I_R=10μA

Leakage current

Forward voltage

I_R

V_R=30V

200

I_F=1.0mA,t_p<300μS

I_F=40mA,t_p<300μS

380

V_F

1000

Typical total capacitance

Reverse recovery Time

C_T

t_rr

V_R=0V,f=1MHz

5.0

I_F=I_R=10mA,I_rr=0.1*I_R,R_L=100Ω

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

http://www.luguang.cn

mail:lge@luguang.cn

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BAS40-06V	RECTRON	Reverse Voltage Vr : 40 V;Forward Current Io : 0.2 A;Forward Voltage Vf : 0.38 V;Reverse Current Ir : 0.2 uA;Recovery Time : 5 nS;Package / Case : SOT-23;Mounting Style : SMD/SMT;Certified (AEC-Q101...etc) : AEC-Q101	获取价格