概述
规格参数
数据手册BAV21 概述
Small Signal Switching Diodes 小信号开关二极管
BAV21 规格参数
| Case Style： | DO-35 | IF（mA）： | 250 |
| Maximum recurrent peak reverse voltage： | 250 | TRR（nS)： | 50 |
| Maximum instantaneous forward voltage： | 1 | @IF（uA）： | 0.1 |
| Maximum reverse current： | 0.1 | @VR： | |
| class： | Diodes |
BAV21 数据手册
通过下载BAV21数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载BAV17-BAV21
Small Signal Switching Diodes
VOLTAGE RANGE: 20-200 V
CURRENT: 250 mA
DO - 35(GLASS)
Features
Silicon epitaxial planar diode
High speed switching diode
500 mW power dissipation
Mechanical Data
Case: DO-35,glass case
Polarity: Color band denotes cathode
Weight: 0.004 ounces, 0.13 grams
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at
ambient temperature unless otherwise specified.
25
MAXIMUM RATINGS
UNITS
BAV17
20
BAV18
50
BAV19
100
BAV20
150
200
BAV21
200
250
Reverse voltage
Peak reverse voltage
Average forw ard rectified current
Half w ave rectification w ith resist.load
V
V
VR
25
60
120
VRM
mA
I(AV)
2501)
T =
and f 50Hz
Forw ard surge current @ t<1s and T =
@
25
A
1.0
A
25
IFSM
Ptot
RθJA
TJ
J
5001)
Pow er dissipation
Thermal resistance junction to ambient
Junction temperature
@ TA=25
mW
K/W
350
175
-55 --- +175
Storage temperature range
TSTG
1)Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
ELECTRICAL CHARACTERISTICS
MIN
TYP
-
MAX
UNITS
V
Forw ard voltage @ IF=100mA
-
-
-
-
1.0
100
15
-
VF
IR
nA
-
-
Leakage current
@Tj=25
mA
at reverse voltage
@Tj=100
@ V =V =0 f=1MHZ
V
F R
1.5
Capacitance
Reverse recovery time
pF
ns
CJ
trr
-
-
50
from IF=30mA to IR=30mA
from IRR=3mA, RL=100Ω.
1)Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
http://www.luguang.cn
mail:lge@luguang.cn
BAV17-BAV21
Small Signal Switching Diodes
Ratings AND Charactieristic Curves
FIG.2 -- ADMISSIBLE FORWARD CURRENT VERSUS
AMBIENT TEMPERATURE
FIG.1 -- FORWARD CHARACTERISTICS
A
.3
mA
1000
100
IO,IF
TJ=100
.2
DC CURRENT I
F
10
TJ=25
IF
CURRENT (RECTIF.) IF(AV)
1
.1
1
.1
℃
0
30
60
90
120 150
TA
.01
0
.2
.4
.6
.8
1.0V
VF
FIG.3 -- ADMISSIBLE POWER DISSLPATION VERSUS
AMBIENT TEMPERATURE
FIG.4 -- LEAKAGE CURRENT VERSUS JUNCTION
TEMPERATURE
1000
mW
500
IR(TJ)
IR(25
)
400
100
Ptot
300
10
1
200
100
VR=50V
1
℃
0
100
200
0.1
TA
℃
0
100
200
TJ
FIG.5 -- DYNAMIC FORWARD RESISTANCE VERSUS
FORWARD CURRENT
FIG.6 -- CAPACITANCE VERSUS REVERSE VOLTAGE
100
50
2
TJ=25
1.8
r
F
1.6
1.4
20
10
5
CJ
1.2
1
.8
.6
.4
.2
2
1
0
.1 .2 .5
1
2
5
10 20 50 100V
VR
mA
2
5
20
100
50IF
1
10
http://www.luguang.cn
mail:lge@luguang.cn
BAV21 相关器件
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| BAV21,113 | NXP | BAV20; BAV21 - General purpose diodes AXIAL 2-Pin | 获取价格 |
|
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|
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|
| BAV21-13 | DIODES | Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, DO-35 | 获取价格 |
|
| BAV21-A | DIODES | Rectifier Diode, 1 Element, 0.2A, Silicon | 获取价格 |
|
| BAV21-AP | MCC | Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, DO-35, ROHS COMPLIANT, GLASS PACKAGE-2 | 获取价格 |
|
| BAV21-B | DIODES | Rectifier Diode, 1 Element, 0.2A, Silicon | 获取价格 |
|
| BAV21-F | RECTRON | SIGNAL DIODE, | 获取价格 |
|
| BAV21-T50A | ONSEMI | 高压通用型二极管 | 获取价格 |
|
| BAV21-T50R | ONSEMI | 高压通用型二极管 | 获取价格 |
|
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