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BAV21

更新时间：2025-06-28 12:32:56

品牌：LGE

描述：Small Signal Switching Diodes

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中文翻译

免费 PCB/SMT

概述
规格参数
数据手册

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BAV21 概述

Small Signal Switching Diodes 小信号开关二极管

BAV21 规格参数

Case Style：	DO-35	IF（mA）：	250
Maximum recurrent peak reverse voltage：	250	TRR（nS)：	50
Maximum instantaneous forward voltage：	1	@IF（uA）：	0.1
Maximum reverse current：	0.1	@VR：
class：	Diodes

BAV21 数据手册

通过下载BAV21数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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BAV17-BAV21

Small Signal Switching Diodes

VOLTAGE RANGE: 20-200 V

CURRENT: 250 mA

DO - 35(GLASS)

Features

Silicon epitaxial planar diode

High speed switching diode

500 mW power dissipation

Mechanical Data

Case: DO-35,glass case

Polarity: Color band denotes cathode

Weight: 0.004 ounces, 0.13 grams

Dimensions in millimeters

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at

ambient temperature unless otherwise specified.

MAXIMUM RATINGS

UNITS

BAV17

BAV18

BAV19

100

BAV20

150

200

BAV21

200

250

Reverse voltage

Peak reverse voltage

Average forw ard rectified current

Half w ave rectification w ith resist.load

V_R

120

V_RM

I_(AV)

250¹⁾

T =

and f 50Hz

Forw ard surge current @ t<1s and T =

1.0

I_FSM

P_tot

R_θJA

T_J

500¹⁾

Pow er dissipation

Thermal resistance junction to ambient

Junction temperature

@ T_A=25

K/W

350

175

-55 --- +175

Storage temperature range

T_STG

1)Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.

ELECTRICAL CHARACTERISTICS

MIN

TYP

MAX

UNITS

Forw ard voltage @ I_F=100mA

1.0

100

V_F

I_R

Leakage current

@T_j=25

at reverse voltage

@T_j=100

@ V =V =0 f=1MH_Z

F R

1.5

Capacitance

Reverse recovery time

C_J

t_rr

from I_F=30mA to I_R=30mA

from I_RR=3mA, R_L=100Ω.

1)Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.

http://www.luguang.cn

mail:lge@luguang.cn

BAV17-BAV21

Small Signal Switching Diodes

Ratings AND Charactieristic Curves

FIG.2 -- ADMISSIBLE FORWARD CURRENT VERSUS

AMBIENT TEMPERATURE

FIG.1 -- FORWARD CHARACTERISTICS

1000

100

I^O,I^F

TJ=100

DC CURRENT I

T^J=25

I^F

CURRENT (RECTIF.) I^F(AV)

℃

120 150

T^A

.01

1.0V

FIG.3 -- ADMISSIBLE POWER DISSLPATION VERSUS

AMBIENT TEMPERATURE

FIG.4 -- LEAKAGE CURRENT VERSUS JUNCTION

TEMPERATURE

1000

500

I^R(T^J)

I^R(25

)

400

100

P^tot

300

200

100

VR=50V

℃

100

200

0.1

T^A

℃

100

200

T^J

FIG.5 -- DYNAMIC FORWARD RESISTANCE VERSUS

FORWARD CURRENT

FIG.6 -- CAPACITANCE VERSUS REVERSE VOLTAGE

100

TJ=25

1.8

1.6

1.4

C^J

1.2

.1 .2 .5

10 20 50 100V

V^R

100

⁵⁰I^F

http://www.luguang.cn

mail:lge@luguang.cn

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