概述
数据手册MBR3050CT-B 概述
Rectifier Diode,
MBR3050CT-B 数据手册
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PDF下载MBR3030CT
THRU
M C C
TM
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents
20736 Marilla Street Chatsworth
ꢆꢋꢅꢌꢍꢎꢍꢍ
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ
$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ
Micro Commercial Components
MBR3060CT
30 Amp
Features
•
•
•
Guard ring for transient protection
Schottky Barrier
Low power loss high efficiency
High surge capacity, High current capability
Rectifier
x
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
30 to 60 Volts
TO-220AB
x
Marking : type number
Maximum Ratings
•
•
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +175°C
B
L
M
Maximum
Rcurrent
Maximum DC
Blocking
C
D
MCC
Maximum
A
Part Number Peak Reverse RMS Voltage
Voltage
Voltage
K
PIN
2
MBR3030CT
MBR3035CT
MBR3040CT
MBR3045CT
MBR3050CT
MBR3060CT
30V
35V
40V
45V
50V
60V
21V
24.5V
28V
31.5V
35V
30V
35V
40V
45V
50V
60V
1
3
F
G
I
J
42V
N
Electrical Characteristics @ 25°C Unless Otherwise Specified
H
H
Average Forward
Current
IF(AV)
30 A
TC =100°C
PIN 1
PIN 3
PIN 2
CASE
Peak Forward Surge
Current
IFSM
200A 8.3ms, half sine
ꢁꢂꢃꢉꢄꢊꢂꢇꢄꢊ
ꢀ ꢀ ꢀ ꢀ
Maximum Instantaneous
Forward Voltage
MBR3030CT~3045CT
INCHES
MM
ꢁꢂꢃ
A
B
C
D
ꢃꢂꢄ
.560
.380
.100
.230
ꢃꢅꢆ
ꢃꢂꢄ
14.22
9.65
2.54
5.84
ꢃꢅꢆ
ꢄꢇꢈꢉ
I
=15A ; TJ=25oC
=30A ; TJ=25oC
=30A ; TJ=125oC
.625
.420
.135
.270
15.88
10.67
3.43
FM
0.70V
0.84V
0.72V
I
FM
FM
VF
I
6.86
F
G
H
I
J
K
------
.500
.090
.250
.580
.110
------
12.70
2.29
0.51
0.30
6.35
14.73
2.79
1.14
0.64
I
FM
=15A ; TJ=25oC
=30A ; TJ=25oC
MBR3050CT~3060CT
0.80V
0.95V
0.85V
I
FM
FM
.020
.012
.045
.025
I
=30A ; TJ=125oC
.139
.161
3.53
4.09
L
M
N
.140
.045
.080
.190
.055
.115
3.56
1.14
2.03
4.83
1.40
2.92
Maximum DC Reverse
Current At Rated DC
Blocking Voltage
IR
0.2 mA TJ = 25°C
Typical Junction
Capacitance
MBR3030CT-3045CT
MBR3050CT-3060CT
CJ
Measured at
1.0MHz, VR=4.0V
450pF
400pF
*Pulse Test: Pulse Width 300µsec, Duty Cycle 1%
www.mccsemi.com
Revision: 6
2007/07/16
1 of 3
RATING AND CHARACTERISTIC CURVES
MBR3030CT thru MBR3060CT
M C C
TM
Micro Commercial Components
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
FIG.1 - FORWARD CURRENT DERATING CURVE
40
300
250
200
150
100
30
20
10
RESISTIVE OR
INDUCTIVE LOAD
50
0
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
0
25
20
50
75
100
125
150
175
1
2
5
10
50
100
CASE TEMPERATURE , C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
10
100
10
MBR3030CT ~ MBR3045CT
TJ = 125 C
1.0
0.1
MBR3050CT ~ MBR3060CT
1.0
0.1
TJ = 25 C
0.01
TJ = 25 C
PULSE WIDTH 300us
2% Duty cycle
0.001
140
0
20
40
60
80
100
120
0.8
0.9
0.1 0.2
0.3
0.4
0.5
0.6
0.7
1.0
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%)
FIG.5 - TYPICAL JUNCTION CAPACITANCE
10000
MBR3030CT ~ MBR3045CT
1000
MBR3050CT ~ MBR3060CT
TJ = 25 C, f= 1MHz
100
0.1
1
4
100
10
REVERSE VOLTAGE , VOLTS
www.mccsemi.com
2 of 3
Revision: 6
2007/07/16
M C C
TM
Micro Commercial Components
***IMPORTANT NOTICE***
Micro Commercial Components Corp . reserves the right to make changes without further notice to any
product herein to make corrections, modifications , enhancements , improvements , or other changes .
Micro Commercial Components Corp . does not assume any liability arising out of the application or
use of any product described herein; neither does it convey any license under its patent rights ,nor
the rights of others . The user of products in such applications shall assume all risks of such use
and will agree to hold Micro Commercial Components Corp . and all the companies whose
products are represented on our website, harmless against all damages.
***APPLICATIONS DISCLAIMER***
Products offer by Micro Commercial Components Corp . are not intended for use in Medical,
Aerospace or Military Applications.
w w w.m c c s e m i.c o m
3 of 3
Revision: 6
2007/07/16
MBR3050CT-B 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| MBR3050CT-BP | MCC | Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 50V V(RRM), Silicon, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 | 获取价格 |
|
| MBR3050CT-BP-HF | MCC | Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 50V V(RRM), Silicon, TO-220AB, | 获取价格 |
|
| MBR3050CT?? | MDD | TO-220AB | 获取价格 |
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| MBR3050CTR | THINKISEMI | 30.0 Amperes Heatsink Dual Common Anode Schottky Half Bridge Rectifiers | 获取价格 |
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| MBR3050F | ASEMI | Dual High-Voltage Schottky Rectifiers | 获取价格 |
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| MBR3050FCT | PANJIT | SCHOTTKY BARRIER RECTIFIERS | 获取价格 |
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| MBR3050FCT | CTC | SCHOTTKY BARRIER RECTIFIERS | 获取价格 |
|
| MBR3050FCTE3/TU | MICROSEMI | Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 50V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN | 获取价格 |
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| MBR3050LCT | RECTRON | Reverse Voltage Vr : 50 V;Forward Current Io : 30 A;Max Surge Current : 250 A;Forward Voltage Vf : 0.55 V;Reverse Current Ir : 500 uA;Recovery Time : N/A;Package / Case : TO-220AB;Mounting Style : Through Hole | 获取价格 |
|
| MBR3050PT | TSC | 30.0 AMPS. Schottky Barrier Rectifiers | 获取价格 |
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