概述
规格参数
数据手册
替代型号TC4423EPA 概述
3A DUAL HIGH-SPEED POWER MOSFET DRIVERS 3A双高速功率MOSFET驱动器 FET驱动器 MOSFET 驱动器
TC4423EPA 规格参数
| 是否无铅： | 不含铅 | 是否Rohs认证： | 符合 |
| 生命周期： | Active | 零件包装代码： | DIP |
| 包装说明： | DIP, DIP8,.3 | 针数： | 8 |
| Reach Compliance Code： | compliant | ECCN代码： | EAR99 |
| HTS代码： | 8542.39.00.01 | Factory Lead Time： | 7 weeks |
| 风险等级： | 1.43 | 高边驱动器： | YES |
| 接口集成电路类型： | BUFFER OR INVERTER BASED MOSFET DRIVER | JESD-30 代码： | R-PDIP-T8 |
| JESD-609代码： | e3 | 长度： | 9.46 mm |
| 功能数量： | 2 | 端子数量： | 8 |
| 最高工作温度： | 85 °C | 最低工作温度： | -40 °C |
| 标称输出峰值电流： | 3 A | 封装主体材料： | PLASTIC/EPOXY |
| 封装代码： | DIP | 封装等效代码： | DIP8,.3 |
| 封装形状： | RECTANGULAR | 封装形式： | IN-LINE |
| 峰值回流温度（摄氏度）： | NOT APPLICABLE | 电源： | 4.5/18 V |
| 认证状态： | Not Qualified | 座面最大高度： | 4.32 mm |
| 子类别： | MOSFET Drivers | 最大供电电压： | 18 V |
| 最小供电电压： | 4.5 V | 表面贴装： | NO |
| 技术： | CMOS | 温度等级： | INDUSTRIAL |
| 端子面层： | Matte Tin (Sn) | 端子形式： | THROUGH-HOLE |
| 端子节距： | 2.54 mm | 端子位置： | DUAL |
| 处于峰值回流温度下的最长时间： | NOT APPLICABLE | 断开时间： | 0.1 µs |
| 接通时间： | 0.1 µs | 宽度： | 7.62 mm |
TC4423EPA 数据手册
通过下载TC4423EPA数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载TC4423
TC4424
TC4425
3A DUAL HIGH-SPEED POWER MOSFET DRIVERS
GENERAL DESCRIPTION
FEATURES
The TC4423/4424/4425 are higher output current ver-
sionsofthenewTC4426/4427/4428buffer/drivers,which,in
turn, are improved versions of the earlier TC426/427/428
series. All three families are pin-compatible. The TC4423/
4424/4425 drivers are capable of giving reliable service in
farmoredemandingelectricalenvironmentsthantheirante-
cedents.
■ High Peak Output Current .................................. 3A
■ Wide Operating Range .......................... 4.5V to 18V
■ High Capacitive Load
Drive Capability .......................... 1800pF in 25nsec
■ Short Delay Times ............................. <40nsec Typ.
■ Matched Rise/Fall Times
■ Low Supply Current
AlthoughprimarilyintendedfordrivingpowerMOSFETs,
the TC4423/4424/4425 drivers are equally well-suited to
driving any other load (capacitive, resistive, or inductive)
which requires a low impedance driver capable of high peak
currents and fast switching times. For example, heavily
loadedclocklines, coaxialcables, orpiezoelectrictransduc-
ers can all be driven from the TC4423/4424/4425. The only
known limitation on loading is the total power dissipated in
the driver must be kept within the maximum power dissipa-
tion limits of the package.
— With Logic "1" Input ................................. 3.5mA
— With Logic "0" Input ................................. 350µA
■ Low Output Impedance ............................ 3.5Ω Typ.
■ Latch-Up Protected ..Will Withstand 1.5A Reverse
Current
■ Logic Input Will Withstand Negative Swing Up
to 5V
■ ESD Protected.....................................................4kV
■ Pinouts Same as TC1426/27/28; TC4426/27/28
ORDERING INFORMATION
Temperature
Temperature
Part No
Package
Range
Part No.
Package
Range
TC4424EOE
TC4424EPA
16-Pin SO Wide
8-Pin Plastic DIP
– 40°C to +85°C
– 40°C to +85°C
TC4423COE
TC4423CPA
TC4423EOE
TC4423EPA
TC4423MJA
16-Pin SOIC (Wide)
8-Pin Plastic DIP
16-Pin SOIC (Wide)
8-Pin Plastic DIP
8-Pin CerDIP
0°C to +70°C
0°C to +70°C
– 40°C to +85°C
– 40°C to +85°C
– 55°C to +125°C
TC4425MJA
TC4425COE
TC4425CPA
TC4425EOE
TC4425EPA
8-Pin CerDIP
– 55°C to +125°C
0°C to +70°C
16-Pin SO Wide
8-Pin Plastic DIP
16-Pin SO Wide
8-Pin Plastic DIP
0°C to +70°C
– 40°C to +85°C
– 40°C to +85°C
TC4424COE
TC4424CPA
TC4424MJA
16-Pin SOIC (Wide)
8-Pin Plastic DIP
8-Pin CerDIP
0°C to +70°C
0°C to +70°C
– 55°C to +125°C
FUNCTIONAL BLOCK DIAGRAM
V
DD
INVERTING
300 mV
OUTPUT
NONINVERTING
INPUT
4.7V
TC4423
DUAL INVERTING
TC4424
TC4425
DUAL NONINVERTING
ONE INV., ONE NONINV.
GND
EFFECTIVE
NOTES:
INPUT C = 20 pF
(EACH INPUT)
1. TC4425 has one inverting and one noninverting driver.
2. Ground any unused driver input.
© 2001 Microchip Technology Inc. DS21421A
TC4423/4/5-6 10/21/96
3A DUAL HIGH-SPEED POWER MOSFET DRIVERS
TC4423
TC4424
TC4425
SOIC RθJ-A ................................................... 155°C/W
SOIC RθJ-C ..................................................... 75°C/W
Operating Temperature Range
C Version ............................................... 0°C to +70°C
I Version ............................................- 25°C to +85°C
E Version ...........................................- 40°C to +85°C
M Version ........................................- 55°C to +125°C
Package Power Dissipation (TA ≤ 70°C)
ABSOLUTE MAXIMUM RATINGS
Supply Voltage ......................................................... +22V
Input Voltage, IN A or IN B ...... VDD + 0.3V to GND – 5.0V
Maximum Chip Temperature................................. +150°C
Storage Temperature Range ................ – 65°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300°C
Package Thermal Resistance
CerDIP RθJ-A ................................................ 150°C/W
CerDIP RθJ-C .................................................. 55°C/W
PDIP RθJ-A ................................................... 125°C/W
PDIP RθJ-C ..................................................... 45°C/W
Plastic DIP ......................................................730mW
CerDIP ............................................................800mW
SOIC ...............................................................470mW
PIN CONFIGURATIONS
4423
NC
4424
NC
4425
NC
16-Pin SO Wide
NC
IN A
NC
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
4423
NC
4424
NC
4425
NC
8-Pin DIP
OUT A OUT A
OUT A OUT A
OUT A
OUT A
1
2
3
4
8
7
6
5
NC
IN A
GND
V
GND
V
DD
V
DD
DD
OUT A OUT A OUT A
TC4423
TC4424
TC4425
TC4423
TC4424
TC4425
GND
NC
V
V
DD
V
DD
V
V
V
DD
DD
DD
DD
IN B
OUT B OUT B OUT B
OUT B
OUT B OUT B
IN B
NC
OUT B OUT B OUT B
NC
NC
NC
NC = NO CONNECTION
NOTE: Duplicate pins must both be connected for proper operation.
ELECTRICAL CHARACTERISTICS: TA = +25°C with 4.5V ≤ VDD ≤ 18V, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max Unit
Input
VOH
VIL
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Current
2.4
—
—
—
—
—
0.8
1
V
V
IIN
0V ≤ VIN ≤ VDD
– 1
µA
Output
VOH
VOL
RO
High Output Voltage
Low Output Voltage
VDD – 0.025
—
—
2.8
3.5
3
—
0.025
5
V
V
Ω
Ω
A
A
—
—
Output Resistance, High
Output Resistance, Low
Peak Output Current
IOUT = 10 mA, VDD = 18V
IOUT = 10 mA, VDD = 18V
RO
—
5
IPK
—
—
IREV
Latch-Up Protection
Withstand Reverse Current
Duty Cycle ≤ 2%
t ≤ 300 µsec
1.5
—
—
Switching Time (Note 1)
tR
Rise Time
Fall Time
Figure 1, CL = 1800pF
Figure 1, CL = 1800pF
Figure 1, CL = 1800pF
Figure 1, CL = 1800pF
—
—
—
—
23
25
33
38
35
35
75
75
nsec
tF
nsec
nsec
nsec
tD1
tD2
Delay Time
Delay Time
Power Supply
IS
Power Supply Current
VIN = 3V (Both Inputs)
VIN = 0V (Both Inputs)
—
—
1.5
0.15
2.5
0.25
mA
mA
© 2001 Microchip Technology Inc. DS21421A
TC4423/4/5-6 10/21/96
2
3A DUAL HIGH-SPEED POWER MOSFET DRIVERS
TC4423
TC4424
TC4425
ELECTRICAL CHARACTERISTICS (Cont.) Over operating temperature range with 4.5V ≤ VDD ≤ 18V, unless
otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Input
VIH
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Current 0V ≤ VIN ≤ VDD
2.4
—
—
—
—
—
0.8
10
V
V
VIL
IIN
– 10
µA
Output
VOH
VOL
RO
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Latch-Up Protection
VDD – 0.025
—
—
3.7
4.3
3
—
0.025
8
V
V
Ω
Ω
A
A
—
—
—
—
IOUT = 10 mA, VDD = 18V
IOUT = 10 mA, VDD = 18V
RO
8
IPK
—
IREV
Duty Cycle ≤ 2%
1.5
—
—
Withstand Reverse Current
t ≤ 300 µsec
Switching Time (Note 1)
tR
Rise Time
Fall Time
Figure 1, CL = 1800pF
Figure 1, CL = 1800pF
Figure 1, CL = 1800pF
Figure 1, CL = 1800pF
—
—
—
—
28
32
32
38
60
60
nsec
nsec
nsec
nsec
tF
tD1
Delay Time
Delay Time
100
100
tD2
Power Supply
IS
Power Supply Current
VIN = 3V (Both Inputs)
VIN = 0V (Both Inputs)
—
—
2
0.2
3.5
0.3
mA
mA
NOTE: 1. Switching times guaranteed by design.
V
= 16V
Test Circuit
DD
V
= 16V
Test Circuit
DD
1 µF
WIMA
MKS-2
1 µF
WIMA
MKS-2
0.1 µF CERAMIC
0.1 µF CERAMIC
INPUT
1
2
OUTPUT
INPUT
1
2
OUTPUT
C
= 1800pF
L
C
= 1800pF
L
INPUT: 100 kHz,
square wave,
INPUT: 100 kHz,
square wave,
t
= t
TC4423
(1/2 TC4425)
RISE FALL
TC4424
(1/2 TC4425)
t
= t
RISE FALL
≤ 10 nsec
≤ 10 nsec
+5V
+5V
90%
90%
INPUT
INPUT
10%
10%
0V
0V
t
t
D1
D2
t
t
F
R
16V
90%
10%
90%
16V
t
90%
t
D2
90%
D1
t
t
F
R
OUTPUT
0V
OUTPUT
0V
10%
10%
10%
Figure 1. Inverting Driver Switching Time
Figure 2. Noninverting Driver Switching Time
© 2001 Microchip Technology Inc. DS21421A
TC4423/4/5-6 10/21/96
3
3A DUAL HIGH-SPEED POWER MOSFET DRIVERS
TC4423
TC4424
TC4425
TYPICAL CHARACTERISTICS
Rise Time vs. Supply Voltage
Fall Time vs. Supply Voltage
100
100
4700 pF
80
4700 pF
80
3300 pF
60
3300 pF
60
2200 pF
40
2200 pF
40
1500 pF
1000 pF
1500 pF
1000 pF
20
0
20
470 pF
6
470 pF
0
14
16
18
4
6
8
10
12
14
16
18
4
8
10
12
V
V
DD
DD
Fall TIme vs. Capacitive Load
Rise TIme vs. Capacitive Load
100
80
60
40
20
0
100
80
60
40
20
0
5V
5V
10V
15V
10V
15V
100
1000
10,000
100
1000
10,000
C
(pF)
C
LOAD
LOAD (pF)
Propagation Delay vs. Input Amplitude
Rise and Fall Times vs. Temperature
32
30
28
26
24
22
20
18
100
80
60
40
20
C
= 2200 pF
C
V
= 2200 pF
LOAD
LOAD
t
FALL
= 10V
DD
t
D1
t
RISE
t
t
RISE
FALL
t
D2
0
1
2
3
4
5
6
7
8
9
10 11 12
–55 –35 –15
5
25 45 65 85 105 125
(°C)
INPUT (V)
T
A
© 2001 Microchip Technology Inc. DS21421A
TC4423/4/5-6 10/21/96
4
3A DUAL HIGH-SPEED POWER MOSFET DRIVERS
TC4423
TC4424
TC4425
TYPICAL CHARACTERISTICS (Cont.)
Propagation Delay Time vs. Supply Voltage
Delay Time vs. Temperature
50
45
40
35
30
25
20
50
45
40
35
30
25
20
C
= 2200 pF
LOAD
C
= 2200 pF
LOAD
t
D2
D2
t
t
D2
t
D2
4
6
8
10
12
DD
14
16
18
–55 –35 –15
5
25 45 65 85 105 125
(°C)
V
T
A
Quiescent Current vs. Supply Voltage
Quiescent Current vs. Temperature
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
T
= +25°C
A
BOTH INPUTS = 1
BOTH INPUTS = 0
1
INPUTS = 1
INPUTS = 0
0.1
0.01
4
6
8
10
12
14
16
18
–55 –35 –15
5
25 45 65 85 105 125
(°C)
V
DD
T
A
Output Resistance (Output High)
vs. Supply Voltage
Output Resistance (Output Low)
vs. Supply Voltage
14
12
10
8
14
12
10
8
WORST CASE @ T = +150°C
WORST CASE @ T = +150°C
J
J
6
6
TYP @ T = +25°C
TYP @ T = +25°C
4
4
A
A
2
2
4
6
8
10
12
DD
14
16
18
4
6
8
10
12
14
16
18
V
V
DD
© 2001 Microchip Technology Inc. DS21421A
TC4423/4/5-6 10/21/96
5
3A DUAL HIGH-SPEED POWER MOSFET DRIVERS
TC4423
TC4424
TC4425
SUPPLY CURRENT CHARACTERISTICS (Load on Single Output Only)
Supply Current vs. Capacitive Load
Supply Current vs. Frequency
60
50
40
30
20
10
0
60
50
40
30
20
10
0
3300 pF
1000 pF
V
= 18V
V
= 18V
DD
DD
634 kHz
355 kHz
10,000 pF
100 pF
200 kHz
63.4 kHz
112.5 kHz
35.5 kHz
20 kHz
100
1000
10,000
10
100
1000
C
(pF)
FREQUENCY (kHz)
LOAD
Supply Current vs. Frequency
Supply Current vs. Capacitive Load
90
80
70
60
50
40
30
20
10
0
90
80
70
60
50
40
30
20
10
0
V
= 12V
DD
3300 pF
1000 pF
V
= 12V
DD
2 MHz
1.125 MHz
100 pF
200 kHz
10,000 pF
634 kHz
355 kHz
112.5 kHz
63.4 kHz
20 kHz
10
100
1000
100
1000
10,000
C
(pF)
FREQUENCY (kHz)
LOAD
Supply Current vs. Capacitive Load
Supply Current vs. Frequency
120
100
80
60
40
20
0
120
100
80
60
40
20
0
4700 pF
V
= 6V
DD
V
= 6V
DD
10,000 pF
1.125 MHz
2200 pF
3.55 MHz
2 MHz
1000 pF
100 pF
634 kHz
355 kHz
112.5 kHz
20 kHz
10
100
FREQUENCY (kHz)
1000
100
1000
10,000
C
(pF)
LOAD
© 2001 Microchip Technology Inc. DS21421A
TC4423/4/5-6 10/21/96
6
3A DUAL HIGH-SPEED POWER MOSFET DRIVERS
TC4423
TC4424
TC4425
TC4423 Crossover Energy
Thermal Derating Curves
–8
10
1400
8
8 Pin DIP
6
1200
4
16 Pin SOIC
1000
800
2
–9
8
6
10
8 Pin CerDIP
600
400
200
0
4
2
–10
10
0
2
4
6
8
10 12 14 16 18
0
20
40
60
80
120 140
100
V
IN
AMBIENT TEMPERATURE (°C)
NOTE: The values on this graph represent the loss
seen by both drivers in a package during one
complete cycle. For a single driver, divide the stated
values by 2. For a single transition of a single driver,
divide the stated value by 4.
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under Absolute Maximum Ratings (See page 2) may
cause permanent damage to the device. These are stress ratings only and
functional operation of the device at these or any other conditions above
those indicated in the operational sections of the specifications is not
implied. Exposure to Absolute Maximum Rating Conditions for extended
periods may affect device reliability.
PACKAGE DIMENSIONS
8-Pin Plastic DIP
PIN 1
.260 (6.60)
.240 (6.10)
.045 (1.14)
.030 (0.76)
.070 (1.78)
.040 (1.02)
.310 (7.87)
.290 (7.37)
.400 (10.16)
.348 (8.84)
.200 (5.08)
.140 (3.56)
.040 (1.02)
.020 (0.51)
.015 (0.38)
.008 (0.20)
3° MIN.
.150 (3.81)
.115 (2.92)
.400 (10.16)
.310 (7.87)
.110 (2.79)
.090 (2.29)
.022 (0.56)
.015 (0.38)
Dimensions: inches (mm)
© 2001 Microchip Technology Inc. DS21421A
TC4423/4/5-6 10/21/96
7
3A DUAL HIGH-SPEED POWER MOSFET DRIVERS
TC4423
TC4424
TC4425
PACKAGE DIMENSIONS (Cont.)
8-Pin CerDIP
.110 (2.79)
.090 (2.29)
PIN 1
.300 (7.62)
.230 (5.84)
.020 (0.51) MIN.
.055 (1.40) MAX.
.320 (8.13)
.290 (7.37)
.400 (10.16)
.370 (9.40)
.040 (1.02)
.020 (0.51)
.200 (5.08)
.160 (4.06)
.015 (0.38)
.008 (0.20)
3° MIN.
.150 (3.81)
MIN.
.200 (5.08)
.125 (3.18)
.400 (10.16)
.320 (8.13)
.065 (1.65)
.045 (1.14)
.020 (0.51)
.016 (0.41)
16-Pin Plastic SOIC (Wide)
PIN 1
.419 (10.65)
.398 (10.10)
.299 (7.59)
.291 (7.40)
.413 (10.49)
.398 (10.10)
.104 (2.64)
.097 (2.46)
8°
MAX.
.013 (0.33)
.009 (0.23)
.012 (0.30)
.004 (0.10)
.019 (0.48)
.014 (0.36)
.050 (1.27) TYP.
.050 (1.27)
.016 (0.40)
Dimensions: inches (mm)
© 2001 Microchip Technology Inc. DS21421A
TC4423/4/5-6 10/21/96
8
WORLDWIDE SALES AND SERVICE
New York
150 Motor Parkway, Suite 202
Hauppauge, NY 11788
AMERICAS
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200 Fax: 480-792-7277
Technical Support: 480-792-7627
Web Address: http://www.microchip.com
ASIA/PACIFIC (continued)
Singapore
Microchip Technology Singapore Pte Ltd.
200 Middle Road
#07-02 Prime Centre
Tel: 631-273-5305 Fax: 631-273-5335
San Jose
Microchip Technology Inc.
2107 North First Street, Suite 590
San Jose, CA 95131
Singapore, 188980
Tel: 65-334-8870 Fax: 65-334-8850
Rocky Mountain
Taiwan
Microchip Technology Taiwan
11F-3, No. 207
Tung Hua North Road
Taipei, 105, Taiwan
Tel: 886-2-2717-7175 Fax: 886-2-2545-0139
Tel: 408-436-7950 Fax: 408-436-7955
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7966 Fax: 480-792-7456
Toronto
6285 Northam Drive, Suite 108
Mississauga, Ontario L4V 1X5, Canada
Tel: 905-673-0699 Fax: 905-673-6509
Atlanta
500 Sugar Mill Road, Suite 200B
Atlanta, GA 30350
Tel: 770-640-0034 Fax: 770-640-0307
Austin
Analog Product Sales
8303 MoPac Expressway North
Suite A-201
ASIA/PACIFIC
China - Beijing
Microchip Technology Beijing Office
Unit 915
New China Hong Kong Manhattan Bldg.
No. 6 Chaoyangmen Beidajie
Beijing, 100027, No. China
Tel: 86-10-85282100 Fax: 86-10-85282104
EUROPE
Australia
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Suite 22, 41 Rawson Street
Epping 2121, NSW
Austin, TX 78759
Tel: 512-345-2030 Fax: 512-345-6085
Australia
Tel: 61-2-9868-6733 Fax: 61-2-9868-6755
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Tel: 45 4420 9895 Fax: 45 4420 9910
Boston
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Westford, MA 01886
Tel: 978-692-3848 Fax: 978-692-3821
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Microchip Technology Shanghai Office
Room 701, Bldg. B
Far East International Plaza
No. 317 Xian Xia Road
Shanghai, 200051
Boston
Analog Product Sales
Unit A-8-1 Millbrook Tarry Condominium
97 Lowell Road
Concord, MA 01742
France
Tel: 86-21-6275-5700 Fax: 86-21-6275-5060
Arizona Microchip Technology SARL
Parc díActivite du Moulin de Massy
43 Rue du Saule Trapu
Hong Kong
Microchip Asia Pacific
RM 2101, Tower 2, Metroplaza
223 Hing Fong Road
Kwai Fong, N.T., Hong Kong
Tel: 852-2401-1200 Fax: 852-2401-3431
Tel: 978-371-6400 Fax: 978-371-0050
Chicago
333 Pierce Road, Suite 180
Itasca, IL 60143
Tel: 630-285-0071 Fax: 630-285-0075
Dallas
4570 Westgrove Drive, Suite 160
Addison, TX 75001
Tel: 972-818-7423 Fax: 972-818-2924
Batiment A - ler Etage
91300 Massy, France
Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79
Germany
Arizona Microchip Technology GmbH
Gustav-Heinemann Ring 125
D-81739 Munich, Germany
India
Microchip Technology Inc.
India Liaison Office
Divyasree Chambers
Tel: 49-89-627-144 0 Fax: 49-89-627-144-44
1 Floor, Wing A (A3/A4)
No. 11, OíShaugnessey Road
Bangalore, 560 025, India
Tel: 91-80-2290061 Fax: 91-80-2290062
Dayton
Germany
Analog Product Sales
Lochhamer Strasse 13
D-82152 Martinsried, Germany
Tel: 49-89-895650-0 Fax: 49-89-895650-22
Two Prestige Place, Suite 130
Miamisburg, OH 45342
Tel: 937-291-1654 Fax: 937-291-9175
Japan
Detroit
Tri-Atria Office Building
32255 Northwestern Highway, Suite 190
Farmington Hills, MI 48334
Tel: 248-538-2250 Fax: 248-538-2260
Microchip Technology Intl. Inc.
Benex S-1 6F
Italy
Arizona Microchip Technology SRL
Centro Direzionale Colleoni
Palazzo Taurus 1 V. Le Colleoni 1
20041 Agrate Brianza
3-18-20, Shinyokohama
Kohoku-Ku, Yokohama-shi
Kanagawa, 222-0033, Japan
Tel: 81-45-471- 6166 Fax: 81-45-471-6122
Los Angeles
18201 Von Karman, Suite 1090
Irvine, CA 92612
Milan, Italy
Tel: 39-039-65791-1 Fax: 39-039-6899883
Korea
Microchip Technology Korea
168-1, Youngbo Bldg. 3 Floor
Samsung-Dong, Kangnam-Ku
Seoul, Korea
Tel: 949-263-1888 Fax: 949-263-1338
United Kingdom
Arizona Microchip Technology Ltd.
505 Eskdale Road
Winnersh Triangle
Wokingham
Mountain View
Analog Product Sales
1300 Terra Bella Avenue
Mountain View, CA 94043-1836
Tel: 650-968-9241 Fax: 650-967-1590
Tel: 82-2-554-7200 Fax: 82-2-558-5934
Berkshire, England RG41 5TU
Tel: 44 118 921 5869 Fax: 44-118 921-5820
01/09/01
All rights reserved.
©
2001 Microchip Technology Incorporated. Printed in the USA. 1/01
Printed on recycled paper.
Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by
updates. It is your responsibility to ensure that your application meets with your specifications. No representation or warranty is given and no liability is
assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual
property rights arising from such use or otherwise. Use of Microchipís products as critical components in life support systems is not authorized except with
express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, except as maybe explicitly expressed herein, under any intellec-
tual property rights. The Microchip logo and name are registered trademarks of Microchip Technology Inc. in the U.S.A. and other countries. All rights
reserved. All other trademarks mentioned herein are the property of their respective companies.
© 2001 Microchip Technology Inc. DS21421A
TC4423/4/5-6 10/21/96
9
TC4423EPA CAD模型
引脚图
封装焊盘图
TC4423EPA 替代型号
| 型号 | 制造商 | 描述 | 替代类型 | 文档 |
| TC4424EPA | MICROCHIP | 3A DUAL HIGH-SPEED POWER MOSFET DRIVERS | 完全替代 |
|
| TC4424CPA | MICROCHIP | 3A DUAL HIGH-SPEED POWER MOSFET DRIVERS | 类似代替 |
|
| TC4424AVPA | MICROCHIP | 3A Dual High-Speed Power MOSFET Drivers | 类似代替 |
|
TC4423EPA 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| TC4423EPAG | MICROCHIP | 3 A 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDIP8, 0.300 INCH, PLASTIC, MS-001, DIP-8 | 获取价格 |
|
| TC4423M | MICROCHIP | 3A Dual High-Speed Power MOSFET Drivers | 获取价格 |
|
| TC4423MJA | MICROCHIP | 3A DUAL HIGH-SPEED POWER MOSFET DRIVERS | 获取价格 |
|
| TC4423MJA | TELCOM | 3A DUAL HIGH-SPEED POWER MOSFET DRIVERS | 获取价格 |
|
| TC4423MJAG | MICROCHIP | 3 A 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, CDIP8, 0.300 INCH, LEAD FREE, MS-030, CERDIP-8 | 获取价格 |
|
| TC4423VG | MICROCHIP | 3A Dual High-Speed Power MOSFET Drivers | 获取价格 |
|
| TC4423VMF | MICROCHIP | 3A Dual High-Speed Power MOSFET Drivers | 获取价格 |
|
| TC4423VMF713 | MICROCHIP | 3A Dual High-Speed Power MOSFET Drivers | 获取价格 |
|
| TC4423VOE | MICROCHIP | 3A Dual High-Speed Power MOSFET Drivers | 获取价格 |
|
| TC4423VOE713 | MICROCHIP | 3A Dual High-Speed Power MOSFET Drivers | 获取价格 |
|
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