概述
规格参数
数据手册
替代型号TC4423VMF 概述
3A Dual High-Speed Power MOSFET Drivers 3A双高速功率MOSFET驱动器 FET驱动器 MOSFET 驱动器
TC4423VMF 规格参数
| 是否无铅： | 不含铅 | 是否Rohs认证： | 符合 |
| 生命周期： | Active | 零件包装代码： | QFN |
| 包装说明： | HVQCCN, SOLCC8,.25 | 针数： | 8 |
| Reach Compliance Code： | compliant | ECCN代码： | EAR99 |
| HTS代码： | 8542.39.00.01 | Factory Lead Time： | 7 weeks |
| 风险等级： | 5.2 | Is Samacsys： | N |
| 高边驱动器： | YES | 接口集成电路类型： | BUFFER OR INVERTER BASED MOSFET DRIVER |
| JESD-30 代码： | R-PQCC-N8 | JESD-609代码： | e3 |
| 长度： | 6 mm | 湿度敏感等级： | 3 |
| 功能数量： | 2 | 端子数量： | 8 |
| 最高工作温度： | 125 °C | 最低工作温度： | -40 °C |
| 标称输出峰值电流： | 3 A | 封装主体材料： | PLASTIC/EPOXY |
| 封装代码： | HVQCCN | 封装等效代码： | SOLCC8,.25 |
| 封装形状： | RECTANGULAR | 封装形式： | CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE |
| 峰值回流温度（摄氏度）： | 260 | 电源： | 4.5/18 V |
| 认证状态： | Not Qualified | 座面最大高度： | 0.95 mm |
| 子类别： | MOSFET Drivers | 最大供电电压： | 18 V |
| 最小供电电压： | 4.5 V | 表面贴装： | YES |
| 技术： | CMOS | 温度等级： | AUTOMOTIVE |
| 端子面层： | Matte Tin (Sn) | 端子形式： | NO LEAD |
| 端子节距： | 1.27 mm | 端子位置： | QUAD |
| 处于峰值回流温度下的最长时间： | 40 | 断开时间： | 0.1 µs |
| 接通时间： | 0.1 µs | 宽度： | 5 mm |
| Base Number Matches： | 1 |
TC4423VMF 数据手册
通过下载TC4423VMF数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载TC4423/TC4424/TC4425
3A Dual High-Speed Power MOSFET Drivers
General Description
Features
• High Peak Output Current: 3A
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
The TC4423/TC4424/TC4425 devices are a family of
3A, dual-output buffers/MOSFET drivers. Pin compati-
ble with the TC1426/27/28, TC4426/27/28 and
TC4426A/27A/28A dual 1.5A driver families, the
TC4423/24/25 family has an increased latch-up current
rating of 1.5A, making them even more robust for
operation in harsh electrical environments.
• High Capacitive Load Drive Capability:
- 1800 pF in 25 ns
• Short Delay Times: <40 ns (typ)
• Matched Rise/Fall Times
As MOSFET drivers, the TC4423/TC4424/TC4425 can
easily charge 1800 pF gate capacitance in under
35 nsec, providing low enough impedances in both the
on and off states to ensure the MOSFET's intended
state will not be affected, even by large transients.
• Low Supply Current:
- With Logic ‘1’ Input – 3.5 mA (Max)
- With Logic ‘0’ Input – 350 µA (Max)
• Low Output Impedance: 3.5Ω (typ)
The TC4423/TC4424/TC4425 inputs may be driven
directly from either TTL or CMOS (2.4V to 18V). In
addition, the 300 mV of built-in hysteresis provides
noise immunity and allows the device to be driven from
slowly rising or falling waveforms.
• Latch-Up Protected: Will Withstand 1.5A Reverse
Current
• Logic Input Will Withstand Negative Swing Up To
5V
• ESD Protected: 4 kV
• Pin compatible with the TC1426/TC1427/TC1428,
TC4426/TC4427/TC4428 and TC4426A/
TC4427A/TC4428A devices.
• Space-saving 8-Pin 6x5 DFN Package
Applications
• Switch Mode Power Supplies
• Pulse Transformer Drive
• Line Drivers
(1)
Package Types
TC4423 TC4424 TC4425
8-Pin PDIP
NC
NC
NC
NC 1
IN A 2
GND 3
IN B 4
8
7
6
5
TC4423 TC4424 TC4425
16-Pin SOIC (Wide)
TC4423
TC4424
TC4425
OUT A
OUT A
OUT A
1
2
3
4
5
6
7
8
16
15
14
13
NC
IN A
NC
GND
GND
NC
NC
NC
NC
V
V
V
DD
DD
DD
OUT A
OUT A
OUT A
OUT A
OUT A
OUT A
OUT B
OUT B
OUT B
TC4423
TC4424
TC4425
V
V
V
TC4423 TC4424 TC4425
(2)
DD
DD
DD
8-Pin DFN
V
V
V
12
11
10
DD
DD
DD
1
8
7
6
5
OUT B
OUT B
NC
OUT B
OUT B
NC
OUT B
OUT B
NC
NC
IN A
GND
IN B
NC
NC
NC
IN B
NC
TC4423
TC4424
TC4425
2
OUT A
OUT A
OUT A
9
3
V
V
V
DD
DD
DD
4
OUT B
OUT B
OUT B
Note 1: Duplicate pins must both be connected for proper operation.
2: Exposed pad of the DFN package is electrically isolated.
2004 Microchip Technology Inc.
DS21421D-page 1
TC4423/TC4424/TC4425
(1)
Functional Block Diagram
VDD
Inverting
750 µA
300 mV
Output
Non-inverting
Input
Effective
Input C = 20 pF
(Each Input)
4.7V
TC4423 Dual Inverting
TC4424 Dual Non-inverting
TC4425 One Inverting, One Non-inverting
GND
Note 1: Unused inputs should be grounded.
DS21421D-page 2
2004 Microchip Technology Inc.
TC4423/TC4424/TC4425
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage ................................................................+22V
Input Voltage, IN A or IN B
................................................(V + 0.3V) to (GND – 5V)
DD
Package Power Dissipation (T ≤ 70°C)
A
DFN ......................................................................... Note 2
PDIP.......................................................................730 mW
SOIC.......................................................................470 mW
† Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational sections of this specification is not intended.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, TA = +25°C, with 4.5V ≤ VDD ≤ 18V.
Parameters
Sym
Min
Typ
Max Units
Conditions
Input
Logic ‘1’, High Input Voltage
Logic ‘0’, Low Input Voltage
Input Current
VIH
VIL
IIN
2.4
—
—
—
—
—
0.8
1
V
V
–1
µA 0V ≤ VIN ≤ VDD
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
VOH
VOL
ROH
ROL
IPK
VDD – 0.025
—
—
—
0.025
5
V
V
—
—
—
—
—
2.8
3.5
3
Ω
Ω
A
A
IOUT = 10 mA, VDD = 18V
5
IOUT = 10 mA, VDD = 18V
—
Latch-Up Protection With-
stand Reverse Current
IREV
>1.5
—
Duty cycle ≤ 2%, t ≤ 300 µsec.
Switching Time (Note 1)
Rise Time
tR
tF
tD1
tD2
—
—
—
—
23
25
33
38
35
35
75
75
ns
ns
ns
ns
Figure 4-1, Figure 4-2,
CL = 1800 pF
Fall Time
Figure 4-1, Figure 4-2,
CL = 1800 pF
Delay Time
Delay Time
Figure 4-1, Figure 4-2,
CL = 1800 pF
Figure 4-1, Figure 4-2,
CL = 1800 pF
Power Supply
Power Supply Current
IS
—
—
1.5
0.15
2.5
0.25
mA VIN = 3V (Both inputs)
VIN = 0V (Both inputs)
Note 1: Switching times ensured by design.
2: Package power dissipation is dependent on the copper pad area on the PCB.
2004 Microchip Technology Inc.
DS21421D-page 3
TC4423/TC4424/TC4425
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
Electrical Specifications: Unless otherwise indicated, operating temperature range with 4.5V ≤ VDD ≤ 18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input
Logic ‘1’, High Input Voltage VIH
2.4
—
—
—
—
—
0.8
+10
V
V
Logic ‘0’, Low Input Voltage
Input Current
VIL
IIN
–10
µA
0V ≤ VIN ≤ VDD
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
VOH VDD – 0.025
—
—
—
0.025
8
V
V
Ω
Ω
A
A
VOL
ROH
ROL
IPK
—
—
—
—
—
3.7
4.3
3.0
>1.5
IOUT = 10 mA, VDD = 18V
IOUT = 10 mA, VDD = 18V
8
—
Latch-Up Protection
IREV
—
Duty cycle ≤ 2%, t ≤ 300 µsec
Withstand Reverse Current
Switching Time (Note 1)
Rise Time
tR
tF
tD1
tD2
—
—
—
—
28
32
32
38
60
60
ns
ns
ns
ns
Figure 4-1, Figure 4-2,
CL = 1800 pF
Fall Time
Figure 4-1, Figure 4-2,
CL = 1800 pF
Delay Time
Delay Time
100
100
Figure 4-1, Figure 4-2,
CL = 1800 pF
Figure 4-1, Figure 4-2,
CL = 1800 pF
Power Supply
Power Supply Current
IS
—
—
2.0
0.2
3.5
0.3
mA
VIN = 3V (Both inputs)
VIN = 0V (Both inputs)
Note 1: Switching times ensured by design.
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V ≤ VDD ≤ 18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Specified Temperature Range (C)
Specified Temperature Range (E)
Specified Temperature Range (V)
Maximum Junction Temperature
Storage Temperature Range
Package Thermal Resistances
Thermal Resistance, 8L-6x5 DFN
TA
TA
TA
TJ
TA
0
—
—
—
—
—
+70
+85
°C
°C
°C
°C
°C
–40
–40
—
+125
+150
+150
–65
θJA
—
33.2
—
°C/W Typical four-layer board with
vias to ground plane
Thermal Resistance, 8L-PDIP
Thermal Resistance, 16L-SOIC
θJA
θJA
—
—
125
155
—
—
°C/W
°C/W
DS21421D-page 4
2004 Microchip Technology Inc.
TC4423/TC4424/TC4425
2.0
TYPICAL PERFORMANCE CURVES
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
100
80
60
40
20
0
100
80
60
40
20
0
4700 pF
4700 pF
3300 pF
2200 pF
3300 pF
2200 pF
1500 pF
1000 pF
1500 pF
1000 pF
470 pF
6
470 pF
6
4
8
10
V
12
(V)
14
16
18
4
8
10
V
12
(V)
14
16
18
DD
DD
FIGURE 2-1:
Rise Time vs. Supply
FIGURE 2-4:
Fall Time vs. Supply
Voltage.
Voltage.
100
80
100
80
60
40
20
5V
5V
60
10V
15V
10V
15V
40
20
0
0
100
1000
(pF)
10,000
100
1000
C (pF)
LOAD
10,000
C
LOAD
FIGURE 2-2:
Rise Time vs. Capacitive
FIGURE 2-5:
Fall Time vs. Capacitive
Load.
Load.
32
C
100
80
C
= 2200 pF
= 2200 pF
LOAD
= 10V
LOAD
t
FALL
30
28
26
24
22
20
18
V
DD
t
D1
t
RISE
60
t
RISE
40
t
D2
t
FALL
20
0
1
2
3
4
5
6
7
8
9
10 11 12
-55 -35 -15
5
25 45 65 85 105 125
(°C)
T
Input (V)
A
FIGURE 2-3:
Temperature.
Rise and Fall Times vs.
FIGURE 2-6:
Amplitude.
Propagation Delay vs. Input
2004 Microchip Technology Inc.
DS21421D-page 5
TC4423/TC4424/TC4425
Typical Performance Curves (Continued)
50
45
40
35
30
25
20
50
C
= 2200 pF
LOAD
C
LOAD
= 2200 pF
45
40
35
30
25
20
t
D2
t
D2
t
D1
t
D1
4
6
8
10
V
12
(V)
14
16
18
-55 -35 -15
5
25 45 65 85 105 125
(°C)
T
DD
A
FIGURE 2-7:
Supply Voltage.
Propagation Delay Time vs.
FIGURE 2-10:
Temperature.
Propagation Delay Time vs.
1.4
1.2
1.0
0.8
T
= 25°C
A
Both Inputs = 1
Both Inputs = 0
1
Both Inputs = 1
0.6
0.4
0.2
0.0
0.1
Both Inputs = 0
0.01
4
6
8
10
V
12
(V)
14
16
18
-55 -35 -15
5
25 45 65 85 105 125
(°C)
DD
T
A
FIGURE 2-8:
Quiescent Current vs.
FIGURE 2-11:
Quiescent Current vs.
Supply Voltage.
Temperature.
14
12
10
8
14
12
10
8
Worst Case
J
Worst Case
J
@ T = +150°C
@ T = +150°C
6
6
Typical @
A
Typical @
A
4
4
T
= +25°C
T
= +25°C
2
2
4
6
8
10
12
14
16
18
4
6
8
10
V
12
(V)
14
16
18
V
(V)
DD
DD
FIGURE 2-9:
Output Resistance
FIGURE 2-12:
Output Resistance
(Output High) vs. Supply Voltage.
(Output Low) vs. Supply Voltage.
DS21421D-page 6
2004 Microchip Technology Inc.
TC4423/TC4424/TC4425
Typical Performance Curves (Continued)
Note: Load on single output only
60
60
V
= 18V
V
DD = 18V
3300 pF
1000 pF
DD
50
40
30
20
10
0
50
40
30
20
10
0
634 kHz
355 kHz
10,000 pF
100 pF
200 kHz
63.4 kHz
112.5 kHz
35.5 kHz
20 kHz
100
1000
10,000
10
100
1000
CLOAD (pF)
Frequency (kHz)
FIGURE 2-13:
Supply Current vs.
FIGURE 2-16:
Supply Current vs.
Capacitive Load.
Frequency.
90
90
VDD = 12V
V
DD = 12V
3300 pF
1000 pF
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
2 MHz
1.125 MHz
100 pF
200 kHz
10,000 pF
634 kHz
355 kHz
112.5 kHz
63.4 kHz
20 kHz
100
1000
CLOAD (pF)
10,000
10
100
Frequency (kHz)
1000
FIGURE 2-14:
Supply Current vs.
FIGURE 2-17:
Supply Current vs.
Capacitive Load.
Frequency.
120
120
4700 pF
2200 pF
V
= 6V
DD
VDD = 6V
100
80
60
40
20
0
100
80
60
40
20
0
10,000 pF
1.125 MHz
3.55 MHz
2 MHz
1000 pF
100 pF
634 kHz
355 kHz
112.5 kHz
20 kHz
100
1000
10,000
10
100
1000
CLOAD (pF)
Frequency (kHz)
FIGURE 2-15:
Supply Current vs.
FIGURE 2-18:
Supply Current vs.
Capacitive Load.
Frequency.
2004 Microchip Technology Inc.
DS21421D-page 7
TC4423/TC4424/TC4425
Typical Performance Curves (Continued)
-7
8
6
10
4
2
-8
8
6
10
4
2
-9
10
0
2
4
6
8
10 12 14 16 18
(V)
V
IN
Note:
The values on this graph represent the loss
seen by both drivers in a package during one
complete cycle. For a single driver, divide the
stated values by 2. For a single transition of a
single driver, divide the stated value by 4.
FIGURE 2-19:
TC4423 Crossover Energy.
DS21421D-page 8
2004 Microchip Technology Inc.
TC4423/TC4424/TC4425
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
8-Pin PDIP
PIN FUNCTION TABLE (1)
16-Pin
8-Pin
DFN
SOIC
Symbol
Description
(Wide)
1
2
1
2
1
2
NC
IN A
NC
No connection
Input A
—
3
—
3
3
No connection
Ground
4
GND
GND
NC
—
—
4
—
—
4
5
Ground
6
No connection
Input B
7
IN B
NC
—
—
5
—
—
5
8
No connection
No connection
Output B
9
NC
10
11
12
13
14
15
16
—
OUT B
OUT B
VDD
—
6
—
6
Output B
Supply input
Supply input
Output A
—
7
—
7
VDD
OUT A
OUT A
NC
—
8
—
8
Output A
No connection
Exposed Metal Pad
—
PAD
NC
Note 1: Duplicate pins must be connected for proper operation.
3.1
Inputs A and B
3.4
Ground (GND)
Inputs A and B are TTL/CMOS compatible inputs that
control outputs A and B, respectively. These inputs
have 300 mV of hysteresis between the high and low
input levels, allowing them to be driven from slow rising
and falling signals, and to provide noise immunity.
Ground is the device return pin. The ground pin(s)
should have a low-impedance connection to the bias
supply source return. High peak currents will flow out
the ground pin(s) when the capacitive load is being
discharged.
3.2
Outputs A and B
3.5
Exposed Metal Pad
Outputs A and B are CMOS push-pull outputs that are
capable of sourcing and sinking 3A peaks of current
(VDD = 18V). The low output impedance ensures the
gate of the external MOSFET will stay in the intended
state even during large transients. These outputs also
have a reverse current latch-up rating of 1.5A.
The exposed metal pad of the 6x5 DFN package is not
internally connected to any potential. Therefore, this
pad can be connected to a ground plane or other cop-
per plane on a printed circuit board to aid in heat
removal from the package.
3.3
Supply Input (V
)
DD
VDD is the bias supply input for the MOSFET driver and
has a voltage range of 4.5V to 18V. This input must be
decoupled to ground with a local ceramic capacitor.
This bypass capacitor provides a localized low-
impedance path for the peak currents that are to be
provided to the load.
2004 Microchip Technology Inc.
DS21421D-page 9
TC4423/TC4424/TC4425
4.0
APPLICATIONS INFORMATION
VDD = 18V
VDD = 18V
1 µF
WIMA
MKS-2
1 µF
WIMA
MKS-2
0.1 µF
Ceramic
0.1 µF
Ceramic
Input
Output
1
2
Input
Output
1
2
C = 1800 pF
C = 1800 pF
L
L
TC4423
(1/2 TC4425)
TC4424
(1/2 TC4425)
Input: 100 kHz,
square wave,
Input: 100 kHz,
square wave,
t
= t
≤ 10 ns
t
= t
≤ 10 ns
RISE
FALL
RISE
FALL
+5V
+5V
90%
90%
Input
0V
Input
10%
10%
t
t
0V
D1
D2
t
t
R
F
18V
18V
90%
90%
90%
t
t
D2
90%
10%
D1
t
t
Output
F
R
Output
0V
10%
10%
10%
0V
FIGURE 4-1:
Inverting Driver Switching
FIGURE 4-2:
Non-inverting Driver
Time.
Switching Time.
DS21421D-page 10
2004 Microchip Technology Inc.
TC4423/TC4424/TC4425
5.0
5.1
PACKAGING INFORMATION
Package Marking Information
8-Lead DFN
Example:
XXXXXXX
XXXXXXX
XXYYWW
NNN
TC4423
EMF
0420
256
8-Lead PDIP (300 mil)
Example:
XXXXXXXX
XXXXXNNN
TC4423
CPA256
YYWW
0420
16-Lead SOIC (300 mil)
Example:
XXXXXXXXXXX
XXXXXXXXXXX
XXXXXXXXXXX
YYWWNNN
TC4423COE
0420256
Legend: XX...X Customer specific information*
YY
WW
NNN
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line thus limiting the number of available characters
for customer specific information.
*
Standard marking consists of Microchip part number, year code, week code, traceability code (facility
code, mask rev#, and assembly code). For marking beyond this, certain price adders apply. Please
check with your Microchip Sales Office.
2004 Microchip Technology Inc.
DS21421D-page 11
TC4423/TC4424/TC4425
8-Lead Plastic Dual Flat No Lead Package (MF) 6x5 mm Body (DFN-S) – Saw Singulated
DS21421D-page 12
2004 Microchip Technology Inc.
TC4423/TC4424/TC4425
8-Lead Plastic Dual In-line (P) – 300 mil (PDIP)
E1
D
2
1
n
α
E
A2
A
L
c
A1
β
B1
B
p
eB
Units
INCHES*
NOM
MILLIMETERS
Dimension Limits
MIN
MAX
MIN
NOM
8
MAX
n
p
Number of Pins
Pitch
8
.100
.155
.130
2.54
Top to Seating Plane
A
.140
.170
3.56
2.92
3.94
3.30
4.32
Molded Package Thickness
Base to Seating Plane
Shoulder to Shoulder Width
Molded Package Width
Overall Length
A2
A1
E
.115
.015
.300
.240
.360
.125
.008
.045
.014
.310
5
.145
3.68
0.38
7.62
6.10
9.14
3.18
0.20
1.14
0.36
7.87
5
.313
.250
.373
.130
.012
.058
.018
.370
10
.325
.260
.385
.135
.015
.070
.022
.430
15
7.94
6.35
9.46
3.30
0.29
1.46
0.46
9.40
10
8.26
6.60
9.78
3.43
0.38
1.78
0.56
10.92
15
E1
D
Tip to Seating Plane
Lead Thickness
L
c
Upper Lead Width
B1
B
Lower Lead Width
Overall Row Spacing
Mold Draft Angle Top
Mold Draft Angle Bottom
§
eB
α
β
5
10
15
5
10
15
* Controlling Parameter
§ Significant Characteristic
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-001
Drawing No. C04-018
2004 Microchip Technology Inc.
DS21421D-page 13
TC4423/TC4424/TC4425
16-Lead Plastic Small Outline (SO) – Wide, 300 mil (SOIC)
E
p
E1
D
2
n
1
B
h
α
45°
c
A2
A
φ
β
L
A1
Units
INCHES*
NOM
MILLIMETERS
Dimension Limits
MIN
MAX
MIN
NOM
16
MAX
n
p
Number of Pins
Pitch
16
.050
.099
1.27
Overall Height
A
.093
.104
2.36
2.24
2.50
2.31
0.20
10.34
7.49
10.30
0.50
0.84
4
2.64
Molded Package Thickness
Standoff
A2
A1
E
.088
.004
.394
.291
.398
.010
.016
0
.091
.008
.407
.295
.406
.020
.033
4
.094
.012
.420
.299
.413
.029
.050
8
2.39
0.30
10.67
7.59
10.49
0.74
1.27
8
§
0.10
10.01
7.39
10.10
0.25
0.41
0
Overall Width
Molded Package Width
Overall Length
E1
D
Chamfer Distance
Foot Length
h
L
φ
Foot Angle
c
Lead Thickness
Lead Width
.009
.014
0
.011
.017
12
.013
.020
15
0.23
0.36
0
0.28
0.42
12
0.33
0.51
15
B
α
Mold Draft Angle Top
Mold Draft Angle Bottom
β
0
12
15
0
12
15
* Controlling Parameter
§ Significant Characteristic
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-013
Drawing No. C04-102
DS21421D-page 14
2004 Microchip Technology Inc.
TC4423/TC4424/TC4425
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
Device
X
XX
XXX
X
Examples:
a) TC4423COE:
3A Dual Inverting
MOSFET Driver,
0°C to +70°C,
Temperature Package Tape & Reel
Range
PB Free
16LD SOIC package.
b) TC4423CPA:
c) TC4423VMF:
3A Dual Inverting
MOSFET Driver,
0°C to +70°C,
Device:
TC4423: 3A Dual MOSFET Driver, Inverting
TC4424: 3A Dual MOSFET Driver, Non-Inverting
TC4425: 3A Dual MOSFET Driver, Complementary
8LD PDIP package.
3A Dual Inverting
MOSFET Driver,
-40°C to +125°C,
8LD DFN package.
Temperature Range:
Package:
C
E
V
=
=
=
0°C to +70°C (PDIP & SOIC Only)
-40°C to +85°C
-40°C to +125°C
MF
=
Dual, Flat, No-Lead (6x5 mm Body), 8-lead
a) TC4424COE713: 3A Dual Non-Inverting,
MOSFET Driver,
MF713 = Dual, Flat, No-Lead (6x5 mm Body), 8-lead
(Tape and Reel)
0°C to +70°C,
OE
= SOIC (Wide), 16-pin
16LD SOIC package,
Tape and Reel.
OE713 = SOIC (Wide), 16-pin (Tape and Reel)
PA
G
=
Plastic DIP, (300 mil body), 8-lead
b) TC4424EPA:
3A Dual Non-Inverting,
MOSFET Driver,
-40°C to +85°C,
PB Free:
=
=
Lead-Free device *
Blank
8LD PDIP package.
* Available on selected packages. Contact your local sales
representative for availability.
a) TC4425EOE:
b) TC4425CPA:
3A Dual Complementary,
MOSFET Driver,
-40°C to +85°C,
16LD SOIC package.
3A Dual Complementary,
MOSFET Driver,
0°C to +70°C,
PDIP package.
Sales and Support
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and
recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1. Your local Microchip sales office
2. The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277
3. The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
2004 Microchip Technology Inc.
DS21421D-page 15
TC4423/TC4424/TC4425
NOTES:
DS21421D-page 16
2004 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is intended through suggestion only
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
No representation or warranty is given and no liability is
assumed by Microchip Technology Incorporated with respect
to the accuracy or use of such information, or infringement of
patents or other intellectual property rights arising from such
use or otherwise. Use of Microchip’s products as critical
components in life support systems is not authorized except
with express written approval by Microchip. No licenses are
conveyed, implicitly or otherwise, under any intellectual
property rights.
Trademarks
The Microchip name and logo, the Microchip logo, Accuron,
dsPIC, KEELOQ, microID, MPLAB, PIC, PICmicro,
PICSTART, PRO MATE, PowerSmart, rfPIC, and
SmartShunt are registered trademarks of Microchip
Technology Incorporated in the U.S.A. and other countries.
AmpLab, FilterLab, MXDEV, MXLAB, PICMASTER, SEEVAL,
SmartSensor and The Embedded Control Solutions Company
are registered trademarks of Microchip Technology
Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, dsPICDEM,
dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR,
FanSense, FlexROM, fuzzyLAB, In-Circuit Serial
Programming, ICSP, ICEPIC, Migratable Memory, MPASM,
MPLIB, MPLINK, MPSIM, PICkit, PICDEM, PICDEM.net,
PICLAB, PICtail, PowerCal, PowerInfo, PowerMate,
PowerTool, rfLAB, rfPICDEM, Select Mode, Smart Serial,
SmartTel and Total Endurance are trademarks of Microchip
Technology Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2004, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received ISO/TS-16949:2002 quality system certification for
its worldwide headquarters, design and wafer fabrication facilities in
Chandler and Tempe, Arizona and Mountain View, California in
October 2003. The Company’s quality system processes and
procedures are for its PICmicro® 8-bit MCUs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
2004 Microchip Technology Inc.
DS21421D-page 17
WORLDWIDE SALES AND SERVICE
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
480-792-7627
Australia - Sydney
Tel: 61-2-9868-6733
Fax: 61-2-9868-6755
India - Bangalore
Tel: 91-80-2229-0061
Fax: 91-80-2229-0062
Austria - Weis
Tel: 43-7242-2244-399
Fax: 43-7242-2244-393
China - Beijing
Tel: 86-10-8528-2100
Fax: 86-10-8528-2104
Denmark - Ballerup
Tel: 45-4420-9895
Fax: 45-4420-9910
India - New Delhi
Tel: 91-11-5160-8632
Fax: 91-11-5160-8632
China - Chengdu
Tel: 86-28-8676-6200
Fax: 86-28-8676-6599
France - Massy
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
Japan - Kanagawa
Tel: 81-45-471- 6166
Fax: 81-45-471-6122
Web Address:
www.microchip.com
Atlanta
China - Fuzhou
Tel: 86-591-750-3506
Fax: 86-591-750-3521
Germany - Ismaning
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
Korea - Seoul
Alpharetta, GA
Tel: 770-640-0034
Fax: 770-640-0307
Tel: 82-2-554-7200
Fax: 82-2-558-5932 or
82-2-558-5934
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
China - Hong Kong SAR
Tel: 852-2401-1200
Fax: 852-2401-3431
Boston
Singapore
Tel: 65-6334-8870
Fax: 65-6334-8850
Westford, MA
Tel: 978-692-3848
Fax: 978-692-3821
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
China - Shanghai
Tel: 86-21-6275-5700
Fax: 86-21-6275-5060
Taiwan - Kaohsiung
Tel: 886-7-536-4816
Fax: 886-7-536-4817
Chicago
Itasca, IL
Tel: 630-285-0071
Fax: 630-285-0075
England - Berkshire
Tel: 44-118-921-5869
Fax: 44-118-921-5820
China - Shenzhen
Tel: 86-755-8290-1380
Fax: 86-755-8295-1393
Taiwan - Taipei
Tel: 886-2-2500-6610
Fax: 886-2-2508-0102
Dallas
Addison, TX
China - Shunde
Tel: 972-818-7423
Fax: 972-818-2924
Tel: 86-757-2839-5507
Fax: 86-757-2839-5571
Taiwan - Hsinchu
Tel: 886-3-572-9526
Fax: 886-3-572-6459
Detroit
China - Qingdao
Farmington Hills, MI
Tel: 248-538-2250
Fax: 248-538-2260
Tel: 86-532-502-7355
Fax: 86-532-502-7205
Kokomo
Kokomo, IN
Tel: 765-864-8360
Fax: 765-864-8387
Los Angeles
Mission Viejo, CA
Tel: 949-462-9523
Fax: 949-462-9608
San Jose
Mountain View, CA
Tel: 650-215-1444
Fax: 650-961-0286
Toronto
Mississauga, Ontario,
Canada
Tel: 905-673-0699
Fax: 905-673-6509
08/24/04
DS21421D-page 18
2004 Microchip Technology Inc.
TC4423VMF CAD模型
引脚图
封装焊盘图
TC4423VMF 替代型号
| 型号 | 制造商 | 描述 | 替代类型 | 文档 |
| TC4423AVMF | MICROCHIP | 3 A 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO8, 6 X 5 MM, PLASTIC, LEAD FREE, DFN-8 | 类似代替 |
|
TC4423VMF 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| TC4423VMF713 | MICROCHIP | 3A Dual High-Speed Power MOSFET Drivers | 获取价格 |
|
| TC4423VOE | MICROCHIP | 3A Dual High-Speed Power MOSFET Drivers | 获取价格 |
|
| TC4423VOE713 | MICROCHIP | 3A Dual High-Speed Power MOSFET Drivers | 获取价格 |
|
| TC4423VPA | MICROCHIP | 3A Dual High-Speed Power MOSFET Drivers | 获取价格 |
|
| TC4423_04 | MICROCHIP | 3A Dual High-Speed Power MOSFET Drivers | 获取价格 |
|
| TC4423_13 | MICROCHIP | 3A Dual High-Speed Power MOSFET Drivers | 获取价格 |
|
| TC4424 | MICROCHIP | 3A DUAL HIGH-SPEED POWER MOSFET DRIVERS | 获取价格 |
|
| TC4424 | TELCOM | 3A DUAL HIGH-SPEED POWER MOSFET DRIVERS | 获取价格 |
|
| TC4424A | MICROCHIP | 3A Dual High-Speed Power MOSFET Drivers | 获取价格 |
|
| TC4424AVMF-VAO | MICROCHIP | Buffer/Inverter Based MOSFET Driver, 3A, CMOS, PDSO8 | 获取价格 |
|
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