TC4425COERT
更新时间：2024-12-04 13:10:50
品牌：MICROCHIP
描述：3 A 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO16, SOIC-16
概述
规格参数
数据手册TC4425COERT 概述
3 A 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO16, SOIC-16 MOSFET 驱动器
TC4425COERT 规格参数
| 是否Rohs认证： | 符合 | 生命周期： | Obsolete |
| 零件包装代码： | SOIC | 包装说明： | SOP, |
| 针数： | 16 | Reach Compliance Code： | compliant |
| ECCN代码： | EAR99 | HTS代码： | 8542.39.00.01 |
| 风险等级： | 5.02 | Is Samacsys： | N |
| 高边驱动器： | NO | 接口集成电路类型： | BUFFER OR INVERTER BASED MOSFET DRIVER |
| JESD-30 代码： | R-PDSO-G16 | JESD-609代码： | e3 |
| 长度： | 10.3 mm | 湿度敏感等级： | 1 |
| 功能数量： | 2 | 端子数量： | 16 |
| 最高工作温度： | 70 °C | 最低工作温度： | |
| 标称输出峰值电流： | 3 A | 封装主体材料： | PLASTIC/EPOXY |
| 封装代码： | SOP | 封装形状： | RECTANGULAR |
| 封装形式： | SMALL OUTLINE | 峰值回流温度（摄氏度）： | 260 |
| 认证状态： | Not Qualified | 座面最大高度： | 2.65 mm |
| 最大供电电压： | 18 V | 最小供电电压： | 4.5 V |
| 标称供电电压： | 18 V | 表面贴装： | YES |
| 温度等级： | COMMERCIAL | 端子面层： | Matte Tin (Sn) |
| 端子形式： | GULL WING | 端子节距： | 1.27 mm |
| 端子位置： | DUAL | 处于峰值回流温度下的最长时间： | 40 |
| 断开时间： | 0.1 µs | 接通时间： | 0.1 µs |
| 宽度： | 7.5 mm | Base Number Matches： | 1 |
TC4425COERT 数据手册
通过下载TC4425COERT数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载TC4423/TC4424/TC4425
3A Dual High-Speed Power MOSFET Drivers
General Description
Features
• High Peak Output Current: 3A
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
The TC4423/TC4424/TC4425 devices are a family of
3A, dual-output buffers/MOSFET drivers. Pin compati-
ble with the TC1426/27/28, TC4426/27/28 and
TC4426A/27A/28A dual 1.5A driver families, the
TC4423/24/25 family has an increased latch-up current
rating of 1.5A, making them even more robust for
operation in harsh electrical environments.
• High Capacitive Load Drive Capability:
- 1800 pF in 25 ns
• Short Delay Times: <40 ns (typ)
• Matched Rise/Fall Times
As MOSFET drivers, the TC4423/TC4424/TC4425 can
easily charge 1800 pF gate capacitance in under
35 nsec, providing low enough impedances in both the
on and off states to ensure the MOSFET's intended
state will not be affected, even by large transients.
• Low Supply Current:
- With Logic ‘1’ Input – 3.5 mA (Max)
- With Logic ‘0’ Input – 350 µA (Max)
• Low Output Impedance: 3.5 (typ)
The TC4423/TC4424/TC4425 inputs may be driven
directly from either TTL or CMOS (2.4V to 18V). In
addition, the 300 mV of built-in hysteresis provides
noise immunity and allows the device to be driven from
slowly rising or falling waveforms.
• Latch-Up Protected: Will Withstand 1.5A Reverse
Current
• Logic Input Will Withstand Negative Swing Up To
5V
• ESD Protected: 4 kV
• Pin compatible with the TC1426/TC1427/TC1428,
TC4426/TC4427/TC4428 and TC4426A/
TC4427A/TC4428A devices.
• Space-saving 8-Pin 6x5 DFN Package
Applications
• Switch Mode Power Supplies
• Pulse Transformer Drive
• Line Drivers
(1)
Package Types
TC4423 TC4424 TC4425
8-Pin PDIP
NC
NC
NC
NC 1
IN A 2
GND 3
IN B 4
8
7
6
5
TC4423 TC4424 TC4425
16-Pin SOIC (Wide)
TC4423
TC4424
TC4425
OUT A
OUT A
OUT A
1
2
3
4
5
6
7
8
16
15
14
13
NC
IN A
NC
GND
GND
NC
NC
NC
NC
V
V
V
DD
DD
DD
OUT A
OUT A
OUT A
OUT A
OUT A
OUT A
OUT B
OUT B
OUT B
TC4423
TC4424
TC4425
V
V
V
TC4423 TC4424 TC4425
(2)
DD
DD
DD
8-Pin DFN
V
V
V
12
11
10
DD
DD
DD
1
8
7
6
5
OUT B
OUT B
NC
OUT B
OUT B
NC
OUT B
OUT B
NC
NC
IN A
GND
IN B
NC
NC
NC
IN B
NC
TC4423
TC4424
TC4425
2
OUT A
OUT A
OUT A
9
3
V
V
V
DD
DD
DD
4
OUT B
OUT B
OUT B
Note 1: Duplicate pins must both be connected for proper operation.
2: Exposed pad of the DFN package is electrically isolated.
2002-2012 Microchip Technology Inc.
DS21421E-page 1
TC4423/TC4424/TC4425
(1)
Functional Block Diagram
VDD
Inverting
750 µA
300 mV
Output
Non-inverting
Input
Effective
Input C = 20 pF
(Each Input)
4.7V
TC4423 Dual Inverting
TC4424 Dual Non-inverting
TC4425 One Inverting, One Non-inverting
GND
Note 1: Unused inputs should be grounded.
DS21421E-page 2
2002-2012 Microchip Technology Inc.
TC4423/TC4424/TC4425
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage ................................................................+22V
Input Voltage, IN A or IN B
................................................(V + 0.3V) to (GND – 5V)
DD
Package Power Dissipation (T 70°C)
A
DFN ......................................................................... Note 2
PDIP.......................................................................730 mW
SOIC.......................................................................470 mW
† Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational sections of this specification is not intended.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, TA = +25°C, with 4.5V VDD18V.
Parameters
Sym
Min
Typ
Max Units
Conditions
Input
Logic ‘1’, High Input Voltage
Logic ‘0’, Low Input Voltage
Input Current
VIH
VIL
IIN
2.4
—
—
—
—
—
0.8
1
V
V
–1
µA 0VVINVDD
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
VOH
VOL
ROH
ROL
IPK
VDD – 0.025
—
—
—
0.025
5
V
V
—
—
—
—
—
2.8
3.5
3
A
A
IOUT = 10 mA, VDD = 18V
5
IOUT = 10 mA, VDD = 18V
—
Latch-Up Protection With-
stand Reverse Current
IREV
>1.5
—
Duty cycle2%, t 300 µsec.
Switching Time (Note 1)
Rise Time
tR
tF
tD1
tD2
—
—
—
—
23
25
33
38
35
35
75
75
ns
ns
ns
ns
Figure 4-1, Figure 4-2,
CL = 1800 pF
Fall Time
Figure 4-1, Figure 4-2,
CL = 1800 pF
Delay Time
Delay Time
Figure 4-1, Figure 4-2,
CL = 1800 pF
Figure 4-1, Figure 4-2,
CL = 1800 pF
Power Supply
Power Supply Current
IS
—
—
1.5
0.15
2.5
0.25
mA VIN = 3V (Both inputs)
VIN = 0V (Both inputs)
Note 1: Switching times ensured by design.
2: Package power dissipation is dependent on the copper pad area on the PCB.
2002-2012 Microchip Technology Inc.
DS21421E-page 3
TC4423/TC4424/TC4425
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
Electrical Specifications: Unless otherwise indicated, operating temperature range with 4.5V VDD18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input
Logic ‘1’, High Input Voltage VIH
2.4
—
—
—
—
—
0.8
+10
V
V
Logic ‘0’, Low Input Voltage
Input Current
VIL
IIN
–10
µA
0VVINVDD
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
VOH VDD – 0.025
—
—
—
0.025
8
V
V
A
A
VOL
ROH
ROL
IPK
—
—
—
—
—
3.7
4.3
3.0
>1.5
IOUT = 10 mA, VDD = 18V
IOUT = 10 mA, VDD = 18V
8
—
Latch-Up Protection
IREV
—
Duty cycle2%, t 300 µsec
Withstand Reverse Current
Switching Time (Note 1)
Rise Time
tR
tF
tD1
tD2
—
—
—
—
28
32
32
38
60
60
ns
ns
ns
ns
Figure 4-1, Figure 4-2,
CL = 1800 pF
Fall Time
Figure 4-1, Figure 4-2,
CL = 1800 pF
Delay Time
Delay Time
100
100
Figure 4-1, Figure 4-2,
CL = 1800 pF
Figure 4-1, Figure 4-2,
CL = 1800 pF
Power Supply
Power Supply Current
IS
—
—
2.0
0.2
3.5
0.3
mA
VIN = 3V (Both inputs)
VIN = 0V (Both inputs)
Note 1: Switching times ensured by design.
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V VDD 18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Specified Temperature Range (C)
Specified Temperature Range (E)
Specified Temperature Range (V)
Maximum Junction Temperature
Storage Temperature Range
Package Thermal Resistances
Thermal Resistance, 8L-6x5 DFN
TA
TA
TA
TJ
TA
0
—
—
—
—
—
+70
+85
°C
°C
°C
°C
°C
–40
–40
—
+125
+150
+150
–65
JA
—
33.2
—
°C/W Typical four-layer board with
vias to ground plane
Thermal Resistance, 8L-PDIP
Thermal Resistance, 16L-SOIC
JA
JA
—
—
125
155
—
—
°C/W
°C/W
DS21421E-page 4
2002-2012 Microchip Technology Inc.
TC4423/TC4424/TC4425
2.0
TYPICAL PERFORMANCE CURVES
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
100
80
60
40
20
0
100
80
60
40
20
0
4700 pF
4700 pF
3300 pF
2200 pF
3300 pF
2200 pF
1500 pF
1000 pF
1500 pF
1000 pF
470 pF
6
470 pF
6
4
8
10
V
12
(V)
14
16
18
4
8
10
V
12
(V)
14
16
18
DD
DD
FIGURE 2-1:
Rise Time vs. Supply
FIGURE 2-4:
Fall Time vs. Supply
Voltage.
Voltage.
100
80
60
40
20
100
80
60
40
20
5V
5V
10V
15V
10V
15V
0
0
100
1000
(pF)
10,000
100
1000
C (pF)
LOAD
10,000
C
LOAD
FIGURE 2-2:
Rise Time vs. Capacitive
FIGURE 2-5:
Fall Time vs. Capacitive
Load.
Load.
32
C
100
80
C
= 2200 pF
= 2200 pF
LOAD
= 10V
LOAD
t
FALL
30
28
26
24
22
20
18
V
DD
t
D1
t
RISE
60
t
RISE
40
t
D2
t
FALL
20
0
1
2
3
4
5
6
7
8
9
10 11 12
-55 -35 -15
5
25 45 65 85 105 125
C)
T
(
°
Input (V)
A
FIGURE 2-3:
Temperature.
Rise and Fall Times vs.
FIGURE 2-6:
Amplitude.
Propagation Delay vs. Input
2002-2012 Microchip Technology Inc.
DS21421E-page 5
TC4423/TC4424/TC4425
Typical Performance Curves (Continued)
50
45
40
35
30
25
20
50
C = 2200 pF
LOAD
C
= 2200 pF
LOAD
45
40
35
30
25
20
t
D2
t
D2
t
D1
t
D1
4
6
8
10
V
12
(V)
14
16
18
-55 -35 -15
5
25 45 65 85 105 125
C)
T
(°
DD
A
FIGURE 2-7:
Supply Voltage.
Propagation Delay Time vs.
FIGURE 2-10:
Temperature.
Propagation Delay Time vs.
1.4
1.2
1.0
0.8
T
= 25°C
A
Both Inputs = 1
Both Inputs = 0
1
Both Inputs = 1
0.6
0.4
0.2
0.0
0.1
Both Inputs = 0
0.01
4
6
8
10
V
12
(V)
14
16
18
-55 -35 -15
5
25 45 65 85 105 125
C)
DD
T
(°
A
FIGURE 2-8:
Quiescent Current vs.
FIGURE 2-11:
Quiescent Current vs.
Supply Voltage.
Temperature.
14
12
10
8
14
12
10
8
Worst Case
Worst Case
@ T = +150°C
J
@ T = +150°C
J
6
6
Typical @
Typical @
4
4
T
= +25
°
C
T
= +25°C
A
A
2
2
4
6
8
10
12
14
16
18
4
6
8
10
V
12
(V)
14
16
18
V
(V)
DD
DD
FIGURE 2-9:
Output Resistance
FIGURE 2-12:
Output Resistance
(Output High) vs. Supply Voltage.
(Output Low) vs. Supply Voltage.
DS21421E-page 6
2002-2012 Microchip Technology Inc.
TC4423/TC4424/TC4425
Typical Performance Curves (Continued)
Note: Load on single output only
60
60
V
= 18V
DD
VDD = 18V
3300 pF
1000 pF
50
40
30
20
10
0
50
40
30
20
10
0
634 kHz
355 kHz
10,000 pF
100 pF
200 kHz
63.4 kHz
112.5 kHz
35.5 kHz
20 kHz
100
1000
10,000
10
100
1000
CLOAD (pF)
Frequency (kHz)
FIGURE 2-13:
Supply Current vs.
FIGURE 2-16:
Supply Current vs.
Capacitive Load.
Frequency.
90
90
VDD = 12V
V
DD = 12V
3300 pF
1000 pF
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
2 MHz
1.125 MHz
100 pF
200 kHz
10,000 pF
634 kHz
355 kHz
112.5 kHz
63.4 kHz
20 kHz
100
1000
CLOAD (pF)
10,000
10
100
Frequency (kHz)
1000
FIGURE 2-14:
Supply Current vs.
FIGURE 2-17:
Supply Current vs.
Capacitive Load.
Frequency.
120
120
4700 pF
2200 pF
V
= 6V
DD
VDD = 6V
100
80
60
40
20
0
100
80
60
40
20
0
10,000 pF
1.125 MHz
3.55 MHz
2 MHz
1000 pF
100 pF
634 kHz
355 kHz
112.5 kHz
20 kHz
100
1000
10,000
10
100
1000
CLOAD (pF)
Frequency (kHz)
FIGURE 2-15:
Supply Current vs.
FIGURE 2-18:
Supply Current vs.
Capacitive Load.
Frequency.
2002-2012 Microchip Technology Inc.
DS21421E-page 7
TC4423/TC4424/TC4425
Typical Performance Curves (Continued)
-7
8
6
10
4
2
-8
8
6
10
4
2
-9
10
0
2
4
6
8
10 12 14 16 18
(V)
V
IN
Note:
The values on this graph represent the loss
seen by both drivers in a package during one
complete cycle. For a single driver, divide the
stated values by 2. For a single transition of a
single driver, divide the stated value by 4.
FIGURE 2-19:
TC4423 Crossover Energy.
DS21421E-page 8
2002-2012 Microchip Technology Inc.
TC4423/TC4424/TC4425
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
8-Pin PDIP
PIN FUNCTION TABLE (1)
16-Pin
8-Pin
DFN
SOIC
Symbol
Description
(Wide)
1
2
1
2
1
2
NC
IN A
NC
No connection
Input A
—
3
—
3
3
No connection
Ground
4
GND
GND
NC
—
—
4
—
—
4
5
Ground
6
No connection
Input B
7
IN B
NC
—
—
5
—
—
5
8
No connection
No connection
Output B
9
NC
10
11
12
13
14
15
16
—
OUT B
OUT B
VDD
—
6
—
6
Output B
Supply input
Supply input
Output A
—
7
—
7
VDD
OUT A
OUT A
NC
—
8
—
8
Output A
No connection
Exposed Metal Pad
—
PAD
NC
Note 1: Duplicate pins must be connected for proper operation.
3.1
Inputs A and B
3.4
Ground (GND)
Inputs A and B are TTL/CMOS compatible inputs that
control outputs A and B, respectively. These inputs
have 300 mV of hysteresis between the high and low
input levels, allowing them to be driven from slow rising
and falling signals, and to provide noise immunity.
Ground is the device return pin. The ground pin(s)
should have a low-impedance connection to the bias
supply source return. High peak currents will flow out
the ground pin(s) when the capacitive load is being
discharged.
3.2
Outputs A and B
3.5
Exposed Metal Pad
Outputs A and B are CMOS push-pull outputs that are
capable of sourcing and sinking 3A peaks of current
(VDD = 18V). The low output impedance ensures the
gate of the external MOSFET will stay in the intended
state even during large transients. These outputs also
have a reverse current latch-up rating of 1.5A.
The exposed metal pad of the 6x5 DFN package is not
internally connected to any potential. Therefore, this
pad can be connected to a ground plane or other cop-
per plane on a printed circuit board to aid in heat
removal from the package.
3.3
Supply Input (V
)
DD
VDD is the bias supply input for the MOSFET driver and
has a voltage range of 4.5V to 18V. This input must be
decoupled to ground with a local ceramic capacitor.
This bypass capacitor provides a localized low-
impedance path for the peak currents that are to be
provided to the load.
2002-2012 Microchip Technology Inc.
DS21421E-page 9
TC4423/TC4424/TC4425
4.0
APPLICATIONS INFORMATION
VDD = 18V
VDD = 18V
1 µF
WIMA
MKS-2
1 µF
WIMA
MKS-2
0.1 µF
Ceramic
0.1 µF
Ceramic
Input
Output
1
2
Input
Output
1
2
C = 1800 pF
C = 1800 pF
L
L
TC4423
(1/2 TC4425)
TC4424
(1/2 TC4425)
Input: 100 kHz,
square wave,
Input: 100 kHz,
square wave,
t
= t
10 ns
t
= t
10 ns
RISE
FALL
RISE
FALL
+5V
+5V
90%
90%
Input
0V
Input
10%
10%
t
t
0V
D1
D2
t
t
R
F
18V
18V
90%
90%
90%
t
t
D2
90%
10%
D1
t
t
Output
F
R
Output
0V
10%
10%
10%
0V
FIGURE 4-1:
Inverting Driver Switching
FIGURE 4-2:
Non-inverting Driver
Time.
Switching Time.
DS21421E-page 10
2002-2012 Microchip Technology Inc.
TC4423/TC4424/TC4425
5.0
5.1
PACKAGING INFORMATION
Package Marking Information
8-Lead DFN
Example:
XXXXXXX
XXXXXXX
XXYYWW
NNN
TC4423
EMF
0420
256
8-Lead PDIP (300 mil)
Example:
XXXXXXXX
XXXXXNNN
TC4423
CPA256
YYWW
0420
16-Lead SOIC (300 mil)
Example:
XXXXXXXXXXX
XXXXXXXXXXX
XXXXXXXXXXX
YYWWNNN
TC4423COE
0420256
Legend: XX...X Customer-specific information
Y
Year code (last digit of calendar year)
YY
WW
NNN
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
e
3
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator (
can be found on the outer packaging for this package.
*
)
3
e
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
2002-2012 Microchip Technology Inc.
DS21421E-page 11
TC4423/TC4424/TC4425
8-Lead Plastic Dual Flat No Lead Package (MF) 6x5 mm Body (DFN-S) – Saw Singulated
Note: For the most current package drawings, please see the Microchip Packaging Specification located
at http://www.microchip.com/packaging
DS21421E-page 12
2002-2012 Microchip Technology Inc.
TC4423/TC4424/TC4425
8-Lead Plastic Dual In-line (P) – 300 mil (PDIP)
Note: For the most current package drawings, please see the Microchip Packaging Specification located
at http://www.microchip.com/packaging
E1
D
2
n
1
E
A2
A
L
c
A1
B1
B
p
eB
Units
INCHES*
NOM
MILLIMETERS
Dimension Limits
MIN
MAX
MIN
NOM
8
MAX
n
p
Number of Pins
Pitch
8
.100
.155
.130
2.54
Top to Seating Plane
A
.140
.170
3.56
2.92
3.94
3.30
4.32
Molded Package Thickness
Base to Seating Plane
Shoulder to Shoulder Width
Molded Package Width
Overall Length
A2
A1
E
.115
.015
.300
.240
.360
.125
.008
.045
.014
.310
5
.145
3.68
0.38
7.62
6.10
9.14
3.18
0.20
1.14
0.36
7.87
5
.313
.250
.373
.130
.012
.058
.018
.370
10
.325
.260
.385
.135
.015
.070
.022
.430
15
7.94
6.35
9.46
3.30
0.29
1.46
0.46
9.40
10
8.26
6.60
9.78
3.43
0.38
1.78
0.56
10.92
15
E1
D
Tip to Seating Plane
Lead Thickness
L
c
Upper Lead Width
B1
B
Lower Lead Width
Overall Row Spacing
Mold Draft Angle Top
Mold Draft Angle Bottom
§
eB
5
10
15
5
10
15
* Controlling Parameter
§ Significant Characteristic
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-001
Drawing No. C04-018
2002-2012 Microchip Technology Inc.
DS21421E-page 13
TC4423/TC4424/TC4425
16-Lead Plastic Small Outline (SO) – Wide, 300 mil (SOIC)
Note: For the most current package drawings, please see the Microchip Packaging Specification located
at http://www.microchip.com/packaging
E
p
E1
D
2
n
1
B
h
45
c
A2
A
L
A1
Units
INCHES*
NOM
MILLIMETERS
Dimension Limits
MIN
MAX
MIN
NOM
16
MAX
n
p
Number of Pins
Pitch
16
.050
.099
1.27
Overall Height
A
.093
.104
2.36
2.24
2.50
2.31
0.20
10.34
7.49
10.30
0.50
0.84
4
2.64
Molded Package Thickness
Standoff
A2
A1
E
.088
.004
.394
.291
.398
.010
.016
0
.091
.008
.407
.295
.406
.020
.033
4
.094
.012
.420
.299
.413
.029
.050
8
2.39
0.30
10.67
7.59
10.49
0.74
1.27
8
§
0.10
10.01
7.39
10.10
0.25
0.41
0
Overall Width
Molded Package Width
Overall Length
E1
D
Chamfer Distance
Foot Length
h
L
Foot Angle
c
Lead Thickness
Lead Width
.009
.014
0
.011
.017
12
.013
.020
15
0.23
0.36
0
0.28
0.42
12
0.33
0.51
15
B
Mold Draft Angle Top
Mold Draft Angle Bottom
0
12
15
0
12
15
* Controlling Parameter
§ Significant Characteristic
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-013
Drawing No. C04-102
DS21421E-page 14
2002-2012 Microchip Technology Inc.
TC4423/TC4424/TC4425
6.0
REVISION HISTORY
Revision E (December 2012)
Added a note to each package outline drawing.
2002-2012 Microchip Technology Inc.
DS21421E-page 15
TC4423/TC4424/TC4425
DS21421E-page 16
2002-2012 Microchip Technology Inc.
TC4423/TC4424/TC4425
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
Device
X
XX
XXX
X
Examples:
a) TC4423COE:
3A Dual Inverting
MOSFET Driver,
0°C to +70°C,
Temperature Package Tape & Reel
Range
PB Free
16LD SOIC package.
b) TC4423CPA:
c) TC4423VMF:
3A Dual Inverting
MOSFET Driver,
0°C to +70°C,
Device:
TC4423: 3A Dual MOSFET Driver, Inverting
TC4424: 3A Dual MOSFET Driver, Non-Inverting
TC4425: 3A Dual MOSFET Driver, Complementary
8LD PDIP package.
3A Dual Inverting
MOSFET Driver,
-40°C to +125°C,
8LD DFN package.
Temperature Range:
Package:
C
E
V
=
=
=
0°C to +70°C (PDIP & SOIC Only)
-40°C to +85°C
-40°C to +125°C
MF
=
Dual, Flat, No-Lead (6x5 mm Body), 8-lead
a) TC4424COE713: 3A Dual Non-Inverting,
MOSFET Driver,
MF713 = Dual, Flat, No-Lead (6x5 mm Body), 8-lead
(Tape and Reel)
0°C to +70°C,
OE
= SOIC (Wide), 16-pin
16LD SOIC package,
Tape and Reel.
OE713 = SOIC (Wide), 16-pin (Tape and Reel)
PA
G
=
Plastic DIP, (300 mil body), 8-lead
b) TC4424EPA:
3A Dual Non-Inverting,
MOSFET Driver,
-40°C to +85°C,
PB Free:
=
=
Lead-Free device *
Blank
8LD PDIP package.
* Available on selected packages. Contact your local sales
representative for availability.
a) TC4425EOE:
b) TC4425CPA:
3A Dual Complementary,
MOSFET Driver,
-40°C to +85°C,
16LD SOIC package.
3A Dual Complementary,
MOSFET Driver,
0°C to +70°C,
PDIP package.
Sales and Support
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and
recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1. Your local Microchip sales office
2. The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
2002-2012 Microchip Technology Inc.
DS21421E-page 17
TC4423/TC4424/TC4425
NOTES:
DS21421E-page 18
2002-2012 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,
PICSTART, PIC logo, rfPIC, SST, SST Logo, SuperFlash
and UNI/O are registered trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
32
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MTP, SEEVAL and The Embedded Control Solutions
Company are registered trademarks of Microchip Technology
Incorporated in the U.S.A.
Silicon Storage Technology is a registered trademark of
Microchip Technology Inc. in other countries.
Analog-for-the-Digital Age, Application Maestro, BodyCom,
chipKIT, chipKIT logo, CodeGuard, dsPICDEM,
dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial
Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB
Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code
Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O,
Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA
and Z-Scale are trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
GestIC and ULPP are registered trademarks of Microchip
Technology Germany II GmbH & Co. & KG, a subsidiary of
Microchip Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2002-2012, Microchip Technology Incorporated, Printed in
the U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 9781620767962
QUALITY MANAGEMENT SYSTEM
CERTIFIED BY DNV
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
== ISO/TS 16949 ==
2002-2012 Microchip Technology Inc.
DS21421E-page 19
Worldwide Sales and Service
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://www.microchip.com/
support
Asia Pacific Office
Suites 3707-14, 37th Floor
Tower 6, The Gateway
Harbour City, Kowloon
Hong Kong
Tel: 852-2401-1200
Fax: 852-2401-3431
India - Bangalore
Tel: 91-80-3090-4444
Fax: 91-80-3090-4123
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
Denmark - Copenhagen
Tel: 45-4450-2828
Fax: 45-4485-2829
India - New Delhi
Tel: 91-11-4160-8631
Fax: 91-11-4160-8632
France - Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
India - Pune
Tel: 91-20-2566-1512
Fax: 91-20-2566-1513
Australia - Sydney
Tel: 61-2-9868-6733
Fax: 61-2-9868-6755
Web Address:
www.microchip.com
Germany - Munich
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
Japan - Osaka
Tel: 81-66-152-7160
Fax: 81-66-152-9310
Atlanta
Duluth, GA
Tel: 678-957-9614
Fax: 678-957-1455
China - Beijing
Tel: 86-10-8569-7000
Fax: 86-10-8528-2104
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Japan - Yokohama
Tel: 81-45-471- 6166
Fax: 81-45-471-6122
China - Chengdu
Tel: 86-28-8665-5511
Fax: 86-28-8665-7889
Boston
Westborough, MA
Tel: 774-760-0087
Fax: 774-760-0088
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Korea - Daegu
Tel: 82-53-744-4301
Fax: 82-53-744-4302
China - Chongqing
Tel: 86-23-8980-9588
Fax: 86-23-8980-9500
Chicago
Itasca, IL
Tel: 630-285-0071
Fax: 630-285-0075
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
Korea - Seoul
China - Hangzhou
Tel: 86-571-2819-3187
Fax: 86-571-2819-3189
Tel: 82-2-554-7200
Fax: 82-2-558-5932 or
82-2-558-5934
UK - Wokingham
Tel: 44-118-921-5869
Fax: 44-118-921-5820
Cleveland
Independence, OH
Tel: 216-447-0464
Fax: 216-447-0643
China - Hong Kong SAR
Tel: 852-2943-5100
Fax: 852-2401-3431
Malaysia - Kuala Lumpur
Tel: 60-3-6201-9857
Fax: 60-3-6201-9859
Dallas
Addison, TX
Tel: 972-818-7423
Fax: 972-818-2924
China - Nanjing
Tel: 86-25-8473-2460
Fax: 86-25-8473-2470
Malaysia - Penang
Tel: 60-4-227-8870
Fax: 60-4-227-4068
China - Qingdao
Tel: 86-532-8502-7355
Fax: 86-532-8502-7205
Philippines - Manila
Tel: 63-2-634-9065
Fax: 63-2-634-9069
Detroit
Farmington Hills, MI
Tel: 248-538-2250
Fax: 248-538-2260
China - Shanghai
Tel: 86-21-5407-5533
Fax: 86-21-5407-5066
Singapore
Tel: 65-6334-8870
Fax: 65-6334-8850
Indianapolis
Noblesville, IN
Tel: 317-773-8323
Fax: 317-773-5453
China - Shenyang
Tel: 86-24-2334-2829
Fax: 86-24-2334-2393
Taiwan - Hsin Chu
Tel: 886-3-5778-366
Fax: 886-3-5770-955
Los Angeles
China - Shenzhen
Tel: 86-755-8864-2200
Fax: 86-755-8203-1760
Taiwan - Kaohsiung
Tel: 886-7-213-7828
Fax: 886-7-330-9305
Mission Viejo, CA
Tel: 949-462-9523
Fax: 949-462-9608
China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
Taiwan - Taipei
Tel: 886-2-2508-8600
Fax: 886-2-2508-0102
Santa Clara
Santa Clara, CA
Tel: 408-961-6444
Fax: 408-961-6445
China - Xian
Tel: 86-29-8833-7252
Fax: 86-29-8833-7256
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
Toronto
Mississauga, Ontario,
Canada
China - Xiamen
Tel: 905-673-0699
Fax: 905-673-6509
Tel: 86-592-2388138
Fax: 86-592-2388130
China - Zhuhai
Tel: 86-756-3210040
Fax: 86-756-3210049
11/27/12
DS21421E-page 20
2002-2012 Microchip Technology Inc.
TC4425COERT 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| TC4425COETR | MICROCHIP | 3 A 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO16, SO-16 | 获取价格 |
|
| TC4425CPA | MICROCHIP | 3A DUAL HIGH-SPEED POWER MOSFET DRIVERS | 获取价格 |
|
| TC4425CPA | TELCOM | 3A DUAL HIGH-SPEED POWER MOSFET DRIVERS | 获取价格 |
|
| TC4425EG | MICROCHIP | 3A Dual High-Speed Power MOSFET Drivers | 获取价格 |
|
| TC4425EMF | MICROCHIP | 3A Dual High-Speed Power MOSFET Drivers | 获取价格 |
|
| TC4425EMF713 | MICROCHIP | 3A Dual High-Speed Power MOSFET Drivers | 获取价格 |
|
| TC4425EOE | MICROCHIP | 3A DUAL HIGH-SPEED POWER MOSFET DRIVERS | 获取价格 |
|
| TC4425EOE | TELCOM | 3A DUAL HIGH-SPEED POWER MOSFET DRIVERS | 获取价格 |
|
| TC4425EOE713 | MICROCHIP | 3A Dual High-Speed Power MOSFET Drivers | 获取价格 |
|
| TC4425EOE713G | MICROCHIP | 暂无描述 | 获取价格 |
|
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