TC649VOATR

更新时间:2024-12-04 13:10:50
品牌:MICROCHIP
描述:BRUSHLESS DC MOTOR CONTROLLER, PDSO8, 0.150 INCH, PLASTIC, SOIC-8

TC649VOATR 概述

BRUSHLESS DC MOTOR CONTROLLER, PDSO8, 0.150 INCH, PLASTIC, SOIC-8 电机驱动器 运动控制电子器件

TC649VOATR 规格参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:SOIC
包装说明:SOP, SOP8,.25针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01Factory Lead Time:8 weeks
风险等级:5.08Is Samacsys:N
模拟集成电路 - 其他类型:BRUSHLESS DC MOTOR CONTROLLERJESD-30 代码:R-PDSO-G8
JESD-609代码:e3长度:4.9 mm
湿度敏感等级:3功能数量:1
端子数量:8最高工作温度:85 °C
最低工作温度:封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260电源:3.3/5 V
认证状态:Not Qualified座面最大高度:1.75 mm
子类别:Motion Control Electronics最大供电电流 (Isup):1 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):5 V表面贴装:YES
温度等级:OTHER端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:3.9 mmBase Number Matches:1

TC649VOATR 数据手册

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TC649  
M
PWM Fan Speed Controller with Auto-Shutdown  
and FanSense™ Technology  
Features  
Package Types  
Temperature Proportional Fan Speed for Acoustic  
Control and Longer Fan Life  
SOIC/PDIP/MSOP  
• Efficient PWM Fan Drive  
• 3.0V to 5.5V Supply Range:  
- Fan Voltage Independent of TC649  
Supply Voltage  
V
V
V
1
2
3
4
8
7
6
5
IN  
DD  
C
OUT  
F
TC649  
V
FAULT  
SENSE  
AS  
- Supports any Fan Voltage  
GND  
• FanSense™ Fault Detection Circuits Protect  
Against Fan Failure and Aid System Testing  
• Automatic Shutdown Mode for “Green” Systems  
• Supports Low Cost NTC/PTC Thermistors  
• Space Saving 8-Pin MSOP Package  
General Description  
The TC649 is a switch mode, fan speed controller for  
use with brushless DC fans. Temperature proportional  
speed control is accomplished using pulse width mod-  
ulation (PWM). A thermistor (or other voltage output  
Applications  
• Power Supplies  
• Computers  
• File Servers  
• Portable Computers  
Telecom Equipment  
• UPSs, Power Amps  
• General Purpose Fan Speed Control  
temperature sensor) connected to the V input fur-  
IN  
nishes the required control voltage of 1.25V to 2.65V  
(typical) for 0% to 100% PWM duty cycle. The TC649  
automatically suspends fan operation when measured  
temperature (V ) is below a user programmed  
IN  
minimum setting (V ). An integrated Start-up Timer  
AS  
ensures reliable motor start-up at turn-on, coming out  
of shutdown mode, auto-shutdown mode or following a  
transient fault.  
Available Tools  
• Fan Controller Demonstration Board (TC642DEMO)  
• Fan Controller Evaluation Kit (TC642EV)  
In normal fan operation, a pulse train is present at  
SENSE (Pin 5). The TC649 features Microchip  
TM  
Technology’s proprietary FanSense  
technology for  
increasing system reliability. A missing pulse detector  
monitors this pin during fan operation. A stalled, open  
or unconnected fan causes the TC649 to trigger its  
Start-up Timer once. If the fault persists, the FAULT  
output goes low, and the device is latched in its shut-  
down mode. See Section 5.0, “Typical Applications”,  
for more information and system design guidelines.  
The TC649 is available in the 8-pin PDIP, SOIC and  
MSOP packages and is available in the industrial and  
extended commercial temperature ranges.  
2002 Microchip Technology Inc.  
DS21449C-page 1  
TC649  
Functional Block Diagram  
TC649  
V
IN  
V
DD  
+
PWM  
Control  
Logic  
V
OUT  
C
F
3 x T  
Timer  
PWM  
Clock  
Generator  
FAULT  
Start-up  
Timer  
V
AS  
+
SHDN  
Missing  
Pulse  
Detect  
+
+
V
SHDN  
SENSE  
10k  
GND  
70mV (typ.)  
DS21449C-page 2  
2002 Microchip Technology Inc.  
TC649  
*Stresses above those listed under "Absolute Maximum Rat-  
ings" may cause permanent damage to the device. These are  
stress ratings only and functional operation of the device at  
these or any other conditions above those indicated in the  
operation sections of the specifications is not implied. Expo-  
sure to absolute maximum rating conditions for extended peri-  
ods may affect device reliability.  
1.0  
ELECTRICAL  
CHARACTERISTICS  
Absolute Maximum Ratings*  
Supply Voltage ......................................................... 6V  
Input Voltage, Any Pin.... (GND – 0.3V) to (V +0.3V)  
DD  
Package Thermal Resistance:  
PDIP (R ) ............................................125°C/W  
θJA  
SOIC (R )............................................155°C/W  
θJA  
MSOP (R ) ..........................................200°C/W  
θJA  
Specified Temperature Range ........... -40°C to +125°C  
Storage Temperature Range.............. -65°C to +150°C  
DC ELECTRICAL SPECIFICATIONS  
Electrical Characteristics: Unless otherwise specified, TMIN TA TMAX, VDD = 3.0V to 5.5V.  
Symbol  
VDD  
IDD  
Parameter  
Supply Voltage  
Supply Current, Operating  
Min  
Typ  
Max  
Units  
Test Conditions  
3.0  
0.5  
5.5  
1.0  
V
mA Pins 6, 7 Open,  
CF = 1 µF, VIN = VC(MAX)  
IDD(SHDN)  
Supply Current, Shutdown/  
Auto-shutdown Mode  
VIN, VAS Input Leakage  
25  
µA Pins 6, 7 Open; Note 1  
CF =1 µF, VIN = 0.35V  
IIN  
-1.0  
+1.0  
µA  
VOUT Output  
tR  
tF  
tSHDN  
VOUT Rise Time  
VOUT Fall Time  
Pulse Width (On VIN) to Clear Fault  
Mode  
30  
50  
50  
µsec IOH = 5 mA, Note 1  
µsec IOL = 1 mA, Note 1  
µsec VSHDN, VHYST  
Specifications, Note 1  
IOL  
IOH  
Sink Current at VOUT Output  
Source Current at VOUT Output  
1.0  
5.0  
mA VOL = 10% of VDD  
mA VOH = 80% of VDD  
SENSE Input  
VTH(SENSE) SENSE Input threshold Voltage with  
Respect to GND  
50  
70  
90  
mV Note 1  
FAULT Output  
VOL  
tMP  
tSTART  
tDIAG  
Output Low Voltage  
Missing Pulse Detector Timer  
Start-up Timer  
0.3  
V
IOL = 2.5 mA  
32/F  
32/F  
3/F  
Sec CF = 1.0 µF  
Sec CF = 1.0 µF  
Sec CF = 1.0 µF  
Diagnostic Timer  
VIN, VAS Inputs  
VC(MAX)  
VC(SPAN)  
VAS  
Voltage at VIN for 100% Duty Cycle  
VC(MAX) - VC(MIN)  
Auto-shutdown Threshold  
Voltage applied to VIN to Release  
Reset/Shutdown  
2.5  
2.65  
1.4  
2.8  
1.5  
VC(MAX)  
VDD x 0.13  
V
V
V
V
1.3  
VC(MAX) -VC(SPAN)  
VSHDN  
VREL  
Voltage applied to VIN to Release  
Reset Mode  
VDD x 0.19  
V
VDD = 5V,  
See Figure 5-11  
VHYST  
VHAS  
Hysteresis on VSHDN, VREL  
Hysteresis on Auto-shutdown  
Comparator  
0.01 x VDD  
70  
V
mV  
Pulse Width Modulator  
FOSC  
PWM Frequency  
26  
30  
34  
Hz CF = 1.0 µF  
Note 1: Ensured by design, not tested.  
2002 Microchip Technology Inc.  
DS21449C-page 3  
TC649  
2.3  
Analog Input (V  
)
2.0  
PIN DESCRIPTIONS  
AS  
An external resistor divider connected to the V input  
The descriptions of the pins are listed in Table 2-1.  
AS  
sets the auto-shutdown threshold. Auto-shutdown  
occurs when V V . The fan is automatically  
IN  
AS  
TABLE 2-1:  
Pin No. Symbol  
PIN FUNCTION TABLE  
Descriptiion  
Analog Input  
restarted when V (V + V ). See Section 5.0,  
HAS  
IN  
AS  
“Typical Applications”, for more details.  
1
2
3
4
5
6
7
8
V
IN  
2.4  
Ground (GND)  
C
Analog Output  
Analog Input  
F
GND denotes the ground terminal.  
V
AS  
GND  
Ground Terminal  
2.5  
Analog Input (SENSE)  
SENSE Analog Input  
FAULT Digital (Open Collector) Output  
Pulses are detected at the SENSE pin as fan rotation  
chops the current through a sense resistor (R ).  
SENSE  
V
Digital Output  
OUT  
The absence of pulses indicates  
a fault. See  
V
Power Supply Input  
Section 5.0, “Typical Applications”, for more details.  
DD  
2.1  
Analog Input (V )  
2.6  
Digital Output (FAULT)  
IN  
The thermistor network (or other temperature sensor)  
The FAULT line goes low to indicate a fault condition.  
When FAULT goes low due to a fan fault condition, the  
device is latched in shutdown mode until deliberately  
cleared or until power is cycled.  
connects to the V input. A voltage range of 1.25V to  
IN  
2.65V (typical) on this pin drives an active duty cycle of  
0% to 100% on the V  
pin. The TC649 enters shut-  
OUT  
down mode when V V  
During shutdown, the  
SHDN.  
IN  
2.7  
Digital Output (V  
)
FAULT output is inactive, and supply current falls to  
25 µA (typical). The TC649 exits shutdown mode when  
OUT  
is an active high complimentary output that drives  
V
OUT  
V
V  
. See Section 5.0, “Typical Applications”, for  
REL  
IN  
the base of an external NPN transistor (via an appropri-  
ate base resistor) or the gate of an N-channel  
MOSFET. This output has asymmetrical drive (see  
Section 1.0, “Electrical Characteristics”).  
details.  
2.2  
Analog Output (C )  
F
C is the positive terminal for the PWM ramp generator  
F
2.8  
Power Supply Input (V  
)
timing capacitor. The recommended C is 1 µF for  
DD  
may be independent of the fan’s power supply  
F
30 Hz PWM operation.  
V
DD  
(see Section 1.0, “Electrical Characteristics”).  
DS21449C-page 4  
2002 Microchip Technology Inc.  
TC649  
3.5  
FAULT Output  
3.0  
3.1  
DETAILED DESCRIPTION  
PWM  
Pulses appearing at SENSE due to the PWM turning  
on are blanked, and the remaining pulses are filtered  
by a missing pulse detector. If consecutive pulses are  
not detected for thirty-two PWM cycles ( 1 Sec if  
The PWM circuit consists of a ramp generator and  
threshold detector. The frequency of the PWM is  
determined by the value of the capacitor connected to  
C = 1 µF), the Diagnostic Timer is activated, and  
F
OUT  
V
is driven high continuously for three PWM cycles  
the C input. A frequency of 30 Hz is recommended for  
F
( 100 msec if C = 1 µF). If a pulse is not detected  
most applications (C = 1 µF). The PWM is also the  
F
F
within this window, the Start-up Timer is triggered (see  
Section 3.3, “Start-up Timer”). This should clear a tran-  
sient fault condition. If the missing pulse detector times  
out again, the PWM is stopped and FAULT goes low.  
When FAULT is activated due to this condition, the  
device is latched in shutdown mode and will remain off  
indefinitely. The TC649 is thus prevented from  
attempting to drive a fan under catastrophic fault  
conditions.  
time base for the Start-up Timer (see Section 3.3,  
“Start-up Timer”). The PWM voltage control range is  
1.25V to 2.65V (typical) for 0% to 100% output duty  
cycle.  
3.2  
VOUT Output  
The V  
pin is designed to drive a low cost transistor  
OUT  
or MOSFET as the low side power switching element in  
the system. Various examples of driver circuits will be  
shown throughout the datasheet. This output has  
asymmetric complementary drive and is optimized for  
driving NPN transistors or N-channel MOSFETs. Since  
the system relies on PWM rather than linear control,  
the power dissipation in the power switch is kept to a  
minimum. Generally, very small devices (TO-92 or SOT  
packages) will suffice.  
One of two things will restore operation: Cycling power  
off and then on again; or pulling V below V  
and  
SHDN  
IN  
releasing it to a level above V  
. When one of these  
REL  
two conditions is satisfied, the normal start-up cycle is  
triggered and operation will resume, provided the fault  
has been cleared.  
3.6  
Auto-Shutdown Mode  
3.3  
Start-Up Timer  
If the voltage on V becomes less than the voltage on  
IN  
V
, the fan is automatically shut off (auto-shutdown  
AS  
To ensure reliable fan start-up, the Start-up Timer turns  
mode). The TC649 exits auto-shutdown mode when  
the voltage on V becomes higher than the voltage on  
the V  
output on for 32 cycles of the PWM whenever  
OUT  
IN  
the fan is started from the off state. This occurs at  
V
by V  
(the auto-shutdown hysteresis voltage,  
HAS  
AS  
power-up and when coming out of shutdown or auto-  
shutdown mode. If the PWM frequency is 30 Hz (C =  
see Figure 3-1). The Start-up Timer is triggered and  
normal operation is resumed upon exiting auto-shut-  
down mode. The FAULT output is unconditionally  
inactive in auto-shutdown mode.  
F
1 µF) the resulting start-up time will be approximately  
one second. If a fan fault is detected (see Section 3.5,  
FAULT Output), the Diagnostic Timer is triggered once,  
followed by the Start-up Timer. If the fault persists, the  
device is shut down (see Section 3.5, FAULT Output).  
3.4  
SENSE Input  
(FanSense™ Technology)  
The SENSE input (Pin 5) is connected to a low value  
current sensing resistor in the ground return leg of the  
fan circuit. During normal fan operation, commutation  
occurs as each pole of the fan is energized. This  
causes brief interruptions in the fan current, seen as  
pulses across the sense resistor. If the device is not in  
shutdown or auto-shutdown mode, and pulses are not  
appearing at the SENSE input, a fault exists.  
The short, rapid change in fan current (high dl/dt)  
causes a corresponding dV/dt across the sense  
resistor,  
R
.
The waveform on  
R
is  
SENSE  
SENSE  
differentiated and converted to a logic-level pulse-train  
by C  
and the internal signal processing circuitry.  
SENSE  
The presence and frequency of this pulse-train is a  
direct indication of fan operation. See Section 5.0,  
“Typical Applications”, for more details.  
2002 Microchip Technology Inc.  
DS21449C-page 5  
TC649  
TC649  
Status  
Normal  
Operation  
Auto-Shutdown  
Mode  
Normal  
Operation  
Shut-  
Down  
Normal  
Operation  
HI  
2.6V  
V
+ V  
V
AS  
HAS  
AS  
TEMP.  
1.2V  
t
RESET  
V
IN  
V
REL  
V
SHDN  
LO  
GND  
TIME  
FIGURE 3-1:  
TC649 Nominal Operation.  
If a fan fault has occurred and the device has latched  
itself into shutdown mode, performing a reset will not  
3.7 Shutdown Mode (RESET)  
If an unconditional shutdown and/or device reset is  
desired, the TC649 may be placed in shutdown mode  
clear the fault unless V > (V + V  
). If V is not  
IN  
IN  
AS  
HAS  
greater than V + V  
upon exiting shutdown mode,  
HAS  
AS  
by forcing V to a logic low (i.e., V < V ) (see  
SHDN  
IN  
IN  
the fan will not be restarted, and there will be no way to  
establish that the fan fault has been cleared. To ensure  
that a complete reset takes place, the user’s circuitry  
Figure 3-1). In this mode, all functions cease and the  
FAULT output is unconditionally inactive. The TC649  
should not be shut down unless all heat producing activ-  
ity in the system is at a negligible level. The TC649 exits  
must ensure that V > (V + V ) when the device  
HAS  
IN  
AS  
is released from shutdown mode. A recommended  
algorithm for management of the TC649 by a host  
microcontroller or other external circuitry is given in  
Section 5.0, “Typical Applications”. A small amount of  
shutdown mode when V becomes greater than V  
,
REL  
IN  
the release voltage.  
Entering shutdown mode also performs a complete  
device reset. Shutdown mode resets the TC649 into its  
power-up state. The Start-up and Fault Timers and any  
current faults are cleared. FAULT is unconditionally  
inactive in shutdown mode. Upon exiting shutdown  
hysteresis, typically one percent of V  
= 5.0V), is designed into the V  
(50mV at V  
DD  
DD  
/V  
threshold.  
SHDN REL  
The levels specified for V  
and V  
in Section 1.0,  
SHDN  
REL  
“Electrical Characteristics”, include this hysteresis plus  
adequate margin to account for normal variations in the  
absolute value of the threshold and hysteresis.  
mode (V > V  
), the Start-up Timer will be triggered  
IN  
REL  
and normal operation will resume, assuming no fault  
conditions exist and V > (V + V ).  
IN  
AS  
HAS  
CAUTION: The fan will remain off as long as the V  
IN  
pin is being held low or V < V + V .  
HAS  
Note: If V < V when the device exits shut-  
IN  
AS  
IN  
AS  
down mode, the fan will not restart, but will  
be in auto-shutdown mode.  
DS21449C-page 6  
2002 Microchip Technology Inc.  
TC649  
4.3  
Fan Fault  
4.0  
SYSTEM BEHAVIOR  
Fan Fault is an infinite loop wherein the TC649 is  
The flowcharts describing the TC649’s behavioral  
algorithm are shown in Figure 4-1. They can be  
summarized as follows:  
latched in shutdown mode. This mode can only be  
released by a reset (i.e., V being brought below  
IN  
HAS  
V
, then above (V + V  
) or by power-cycling).  
SHDN  
AS  
4.1  
Power-Up  
(1) While in this state, FAULT is latched on (low) and  
the V output is disabled.  
OUT  
(1) Assuming the device is not being held in shutdown  
or auto-shutdown mode (V > V )...  
(2) A reset sequence applied to the V pin will exit the  
IN  
AS  
IN  
loop to Power-up.  
(3) End.  
(2) Turn V  
output on for 32 cycles of the PWM  
OUT  
clock. This ensures that the fan will start from a  
dead stop.  
(3) During this Start-up Timer, if a fan pulse is  
detected, branch to Normal Operation; if none are  
received…  
(4) Activate the 32-cycle Start-up Timer one more  
time and look for fan pulse; if a fan pulse is  
detected, proceed to Normal Operation; if none  
are received…  
(5) Proceed to Fan Fault.  
(6) End.  
4.2  
Normal Operation  
Normal Operation is an endless loop which may only  
be exited by entering shutdown mode, auto-shutdown  
mode or Fan Fault. The loop can be thought of as exe-  
cuting at the frequency of the oscillator and PWM.  
(1) Reset the missing pulse detector.  
(2) Is TC649 in shutdown or auto-shutdown mode? If  
so…  
a. V  
duty cycle goes to zero.  
OUT  
b. FAULT is disabled.  
c. Exit the loop and wait for V > (V + V ) to  
HAS  
IN  
AS  
resume operation.  
(3) Drive V  
to a duty cycle proportional to V on a  
IN  
OUT  
cycle by cycle basis.  
(4) If a fan pulse is detected, branch back to the start  
of the loop (1).  
(5) If the missing pulse detector times out …  
(6) Activate the 3-cycle Diagnostic Timer and look for  
pulses; if a fan pulse is detected, branch back to  
the start of the loop (1); if none are received…  
(7) Activate the 32-cycle Start-up Timer and look for  
pulses; if a fan pulse is detected, branch back to  
the start of the loop (1); if none are received…  
(8) Quit Normal Operation and go to Fan Fault.  
(9) End.  
2002 Microchip Technology Inc.  
DS21449C-page 7  
TC649  
Normal  
Operation  
Power-Up  
Clear Missing  
Pulse Detector  
Power-on  
Reset  
FAULT = 1  
Yes  
Shutdown  
= 0  
V
< V  
SHDN  
IN  
V
OUT  
Yes  
Shutdown  
= 0  
V
< V ?  
SHDN  
IN  
No  
V
OUT  
No  
V
V
REL  
>
?
IN  
No  
V
> V  
REL  
No  
IN  
Yes  
Yes  
Auto  
Shutdown  
Yes  
Power-Up  
Auto-  
Shutdown  
V
< V ?  
AS  
IN  
Yes  
V
< V  
AS  
?
V
= 0  
IN  
OUT  
V
= 0  
OUT  
No  
No  
V
>
)
HAS  
No  
IN  
+ V  
(V  
AS  
V
>
No  
IN  
V
(V  
V
+
OUT  
Proportional  
to V  
)
AS  
HAS  
Yes  
Hot Start  
IN  
Yes  
Hot Start  
Fire Start-up  
Timer  
(1 SEC)  
Yes  
No  
Fan Pulse  
Detected?  
M.P.D.  
Expired?  
Fire Start-up  
Yes  
Fire  
No  
No  
Timer  
Fan Pulse  
Detected?  
(1 SEC)  
Diagnostic  
Timer  
(100msec)  
Yes  
Yes  
Fan Pulse  
Detected?  
No  
Fire Start-up  
Timer  
(1 Sec)  
Yes  
Fan Pulse  
Detected?  
Normal  
Operation  
No  
Fan Fault  
Yes  
Fan Pulse  
Detected?  
No  
Fan Fault  
Fan Fault  
FAULT = 0,  
V
= 0  
OUT  
No  
Auto-Shutdown  
FAULT = 1,  
No  
Cycling  
Power  
V
< V  
?
IN  
SHDN  
V
= 0  
OUT  
Yes  
Yes  
Yes  
No  
V
> V  
V
> (V + V  
AS  
)?  
?
REL  
IN  
IN  
HAS  
No  
Yes  
Power-Up  
FIGURE 4-1:  
TC649 Behavioral Algorithm Flowchart.  
DS21449C-page 8  
2002 Microchip Technology Inc.  
TC649  
The TC642 demonstration and prototyping board  
(TC642DEMO) and the TC642 Evaluation Kit  
(TC642EV) provide working examples of TC649 cir-  
cuits and prototyping aids. The TC642DEMO is a  
printed circuit board optimized for small size and ease  
of inclusion into system prototypes. The TC642EV is a  
larger board intended for benchtop development and  
analysis. At the very least, anyone contemplating a  
design using the TC649 should consult the documen-  
tation for both TC642EV (DS21403) and TC642DEMO  
(DS21401).Figure 5-1 shows the base schematic for  
the TC642DEMO.  
5.0  
TYPICAL APPLICATIONS  
Designing with the TC649 involves the following:  
(1) The temperature sensor network must be  
configured to deliver 1.25V to 2.65V on V for 0%  
IN  
to 100% of the temperature range to be regulated.  
(2) The auto-shutdown temperature must be set  
with a voltage divider on V  
.
AS  
(3) The output drive transistor and associated circuitry  
must be selected.  
(4) The SENSE network, R  
and C  
, must  
SENSE  
SENSE  
be designed for maximum efficiency while  
delivering adequate signal amplitude.  
(5) If shutdown capability is desired, the drive require-  
ments of the external signal or circuit must be  
considered.  
+5V*  
+
C
B
+12V  
1 µF  
R
1
NTC  
Fan  
Q
Shutdown**  
V
DD  
V
IN  
C
B
0.01 µF  
R
2
Fan Fault  
Shutdown  
FAULT  
1
+5V  
R
BASE  
TC649  
V
R
OUT  
3
V
AS  
C
B
SENSE  
0.01 µF  
C
SENSE  
C
R
4
F
R
SENSE  
C
F
1 µF  
GND  
Notes: *See cautions regarding Latch-up Considerations in Section 5.0, "Typical Applications".  
**Optional. See Section 5.0, "Typical Applications" for details.  
FIGURE 5-1:  
Typical Application Circuit.  
2002 Microchip Technology Inc.  
DS21449C-page 9  
TC649  
EQUATION  
5.1  
Temperature Sensor Design  
The temperature signal connected to V must output a  
V
x R  
DD 2  
IN  
= V(T )  
1
voltage in the range of 1.25V to 2.65V (typical) for 0%  
to 100% of the temperature range of interest. The  
circuit in Figure 5-2 illustrates a convenient way to  
provide this signal.  
R
(T ) + R  
1 2  
TEMP  
V
x R  
2
DD  
= V(T )  
2
R
(T ) + R  
2 2  
TEMP  
V
DD  
Where T and T define the temperature range of the  
1
2
circuit. R  
is the parallel equivalent of the  
TEMP  
thermistor and R at those temperatures.  
I
DIV  
1
More information about thermistors may be obtained  
from AN679, “Temperature Sensing Technologies”,  
and AN685, “Thermistors in Single Supply  
Temperature Sensing Circuit”, which can be down-  
R
=100 kΩ  
1
RT  
NTC  
Thermistor  
1
loaded  
from  
Microchip’s  
website  
at  
V
IN  
100 k@ 25˚C  
www.microchip.com.  
R
2
= 23.2 kΩ  
5.2  
Auto-Shutdown Temperature  
Design  
A voltage divider on V sets the temperature at which  
AS  
the part is automatically shut down if the sensed tem-  
FIGURE 5-2:  
Temperature Sensing  
perature at V drops below the set temperature at V  
IN  
AS  
AS  
Circuit.  
(i.e. V < V ). As with the V input, 1.25V to 2.65V  
IN  
IN  
(typ.) corresponds to the temperature range of interest  
from T to T , respectively. Assuming that the temper-  
Figure 5-2 shows a simple temperature dependent  
voltage divider circuit. RT is a conventional NTC ther-  
1
2
1
ature sensor network designed above is linearly related  
mistor, while R and R are standard resistors. The  
1
2
to temperature, the shutdown temperature T  
related to T and T by:  
is  
supply voltage, V , is divided between R and the  
AS  
DD  
2
parallel combination of RT and R . For convenience,  
2
1
1
1
the parallel combination of RT and R will be referred  
1
1
to as R  
. The resistance of the thermistor at various  
EQUATION  
TEMP  
temperatures is obtained from the manufacturer’s  
specifications. Thermistors are often referred to in  
terms of their resistance at 25°C.  
V
T
- 1.25  
- T  
2.65V - 1.25V  
T - T  
AS  
=
AS  
1
2
1
Generally, the thermistor shown in Figure 5-2 is a non-  
1.4V  
linear device with a negative temperature coefficient  
V
=
(
(T - T ) + 1.25  
AS 1  
)
AS  
T - T  
2
1
(also called an NTC thermistor). In Figure 5-2, R is  
1
used to linearize the thermistor temperature response  
For example, if 1.25V and 2.65V at V corresponds to  
and R is used to produce a positive temperature  
IN  
2
2
a temperature range of T = 0°C to T = 125°C, and the  
coefficient at the V node. As an added benefit, this  
1
IN  
auto-shutdown temperature desired is 25°C, then V  
voltage is:  
configuration produces an output voltage delta of 1.4V,  
AS  
which is well within the range of the V  
C(SPAN)  
specification of the TC649. A 100 kNTC thermistor is  
selected for this application in order to keep I  
minimum.  
at a  
EQUATION  
DIV  
1.4V  
For the voltage range at V to be equal to 1.25V to  
IN  
(25 - 0) + 1.25 = 1.53V  
V
=
AS  
2.65V, the temperature range of this configuration is  
0°C to 50°C. If a different temperature range is required  
(125 - 0)  
from this circuit, R should be chosen to equal the  
1
The V voltage may be set using a simple resistor  
divider, as is shown in Figure 5-3.  
AS  
resistance value of the thermistor at the center of this  
new temperature range. It is suggested that a maxi-  
mum temperature range of 50°C be used with this cir-  
cuit due to thermistor linearity limitations. With this  
change, R is adjusted according to the following  
2
equations:  
DS21449C-page 10  
2002 Microchip Technology Inc.  
TC649  
5.3  
Operations at Low Duty Cycle  
V
DD  
One boundary condition which may impact the  
selection of the minimum fan speed is the irregular  
activation of the Diagnostic Timer due to the TC649  
“missing” fan commutation pulses at low speeds. This  
is a natural consequence of low PWM duty cycles (typ-  
ically 25% or less). Recall that the SENSE function  
detects commutation of the fan as disturbances in the  
R
R
1
I
IN  
I
V
AS  
DIV  
current through R  
. These can only occur when  
SENSE  
the fan is energized (i.e., V  
is “on”). At very low duty  
OUT  
cycles, the V  
output is “off” most of the time. The fan  
2
OUT  
may be rotating normally, but the commutation events  
are occurring during the PWM’s off-time.  
GND  
The phase relationship between the fan’s commutation  
and the PWM edges tends to “walk around” as the  
system operates. At certain points, the TC649 may fail  
to capture a pulse within the 32-cycle missing pulse  
detector window. If this happens, the 3-cycle  
FIGURE 5-3:  
V
Circuit.  
AS  
Per Section 1.0, “Electrical Characteristics”, the leak-  
age current at the V pin is no more than 1 µA. It is  
AS  
Diagnostic Timer will be activated, the V  
output will  
conservative to design for a divider current, I , of  
OUT  
DIV  
be active continuously for three cycles and, if the fan is  
operating normally, a pulse will be detected. If all is  
well, the system will return to normal operation. There  
is no harm in this behavior, but it may be audible to the  
user as the fan accelerates briefly when the Diagnostic  
100 µA. If V = 5.0V then:  
DD  
EQUATION  
5.0V  
– 4  
I
= 1e  
A
, therefore  
Timer fires. For this reason, it is recommended that V  
DIV  
AS  
R + R  
1
2
be set no lower than 1.8V.  
5.0V  
R + R =  
= 50,000= 50 kΩ  
1
2
–4  
5.4  
FanSense Network  
1e A  
(RSENSE and CSENSE  
)
We can further specify R and R by the condition that  
1
2
The FanSense network, comprised of R  
and  
SENSE  
the divider voltage is equal to our desired V . This  
AS  
C
, allows the TC649 to detect commutation of  
SENSE  
yields the following:  
the fan motor (FanSense™ technology). This network  
can be thought of as a differentiator and threshold  
EQUATION  
detector. The function of R  
is to convert the fan  
SENSE  
current into a voltage. C  
serves to AC-couple this  
SENSE  
V
x R  
2
DD  
voltage signal and provide a ground-referenced input to  
the SENSE pin. Designing a proper SENSE network is  
V
=
AS  
R + R  
1
2
simply a matter of scaling R  
to provide the nec-  
SENSE  
essary amount of gain (i.e., the current-to-voltage con-  
version ratio). 0.1 µF ceramic capacitor is  
recommended for C  
Solving for the relationship between R and R results  
1
2
A
in:  
. Smaller values require  
SENSE  
larger sense resistors, and higher value capacitors are  
bulkier and more expensive. Using a 0.1 µF capacitor  
EQUATION  
5 -1.53  
1.53  
V
- V  
AS  
results in reasonable values for R  
. Figure 5-4  
DD  
SENSE  
R = R x  
= R x  
1
2
2
illustrates a typical SENSE network. Figure 5-5 shows  
the waveforms observed using a typical SENSE net-  
work.  
V
AS  
In the case of this example, R = (2.27) R . Substituting  
1
2
this relationship back into the V equation above  
AS  
yields the resistor values:  
R = 15.3 k, and  
2
R = 34.7 kΩ  
1
In this case, the standard values of 34.8 kand  
15.4 kare very close to the calculated values and  
would be more than adequate.  
2002 Microchip Technology Inc.  
DS21449C-page 11  
TC649  
TABLE 5-1:  
Nominal Fan Current (mA)  
RSENSE VS. FAN CURRENT  
V
DD  
R
()  
SENSE  
9.1  
4.7  
3.0  
2.4  
2.0  
1.8  
1.5  
1.3  
1.2  
1.0  
50  
100  
150  
200  
250  
300  
350  
400  
450  
500  
Fan  
R
BASE  
V
OUT  
Q
R
1
SENSE  
C
SENSE  
(0.1 µF Typ.)  
SENSE  
5.5  
Output Drive Transistor Selection  
The TC649 is designed to drive an external transistor  
GND  
or MOSFET for modulating power to the fan. This is  
shown as Q in Figures 5-1, 5-4, 5-6, 5-7, 5-8 and 5-9.  
1
FIGURE 5-4:  
SENSE Network.  
The V  
pin has a minimum source current of 5 mA  
OUT  
and a minimum sink current of 1 mA. Bipolar transistors  
or MOSFETs may be used as the power switching  
element as shown in Figure 5-6. When high current  
gain is needed to drive larger fans, two transistors may  
be used in a Darlington configuration. These circuit  
topologies are shown in Figure 5-6: (a) shows a single  
NPN transistor used as the switching element; (b)  
illustrates the Darlington pair; and (c) shows an N-  
channel MOSFET.  
One major advantage of the TC649’s PWM control  
scheme versus linear speed control is that the power  
dissipation in the pass element is kept very low. Gener-  
ally, low cost devices in very small packages, such as  
TO-92 or SOT, can be used effectively. For fans with  
nominal operating currents of no more than 200 mA, a  
single transistor usually suffices. Above 200 mA, the  
Darlington or MOSFET solution is recommended. For  
the fan sensing function to work correctly, it is  
imperative that the pass transistor be fully saturated  
when “on”.  
Tek Run: 10.0kS/s Sample  
[
T
]
Waveform @ Sense Resistor  
Waveform @ Sense Pin  
GND  
1
2
90mV  
50mV  
GND  
T
M5.00ms  
142mV  
Ch1 100mV  
Ch2  
100mV  
Ch1  
FIGURE 5-5:  
Table 5-1 lists the recommended values of R  
SENSE Waveforms.  
SENSE  
based on the nominal operating current of the fan. Note  
that the current draw specified by the fan manufacturer  
may be a worst-case rating for near-stall conditions and  
may not be the fan’s nominal operating current. The  
values in Table 5-1 refer to actual average operating  
current. If the fan current falls between two of the val-  
ues listed, use the higher resistor value. The end result  
of employing Table 5-1 is that the signal developed  
across the sense resistor is approximately 450 mV in  
amplitude.  
DS21449C-page 12  
2002 Microchip Technology Inc.  
TC649  
Table 5-2 gives examples of some commonly available  
transistors and MOSFETs. This table should be used  
as a guide only since there are many transistors and  
MOSFETs which will work just as well as those listed.  
The critical issues when choosing a device to use as  
be enough to saturate the transistor when conducting  
the full fan current (transistor must have sufficient  
gain); (3) the V  
voltage must be high enough to suf-  
OUT  
ficiently drive the gate of the MOSFET to minimize the  
R
of the device; (4) rated fan current draw must  
DS(on)  
Q1 are: (1) the breakdown voltage (V  
or V  
be within the transistor's/MOSFET's current handling  
capability; and (5) power dissipation must be kept  
within the limits of the chosen device.  
(BR)CEO  
DS  
(MOSFET)) must be large enough to withstand the  
highest voltage applied to the fan (Note: This will occur  
when the fan is off); (2) 5 mA of base drive current must  
V
DD  
V
V
DD  
DD  
Fan  
Fan  
Fan  
R
BASE  
R
BASE  
V
OUT  
Q
1
V
Q
1
OUT  
Q
1
V
OUT  
Q
2
R
R
SENSE  
SENSE  
R
SENSE  
GND  
C) N-Channel MOSFET  
GND  
a) Single Bipolar Transistor  
GND  
b) Darlington Transistor Pair  
FIGURE 5-6:  
Output Drive Transistor Circuit Topologies.  
TABLE 5-2:  
Device  
TRANSISTORS AND MOSFETS FOR Q (V = 5V)  
1
DD  
Max. V  
/V  
V
/V  
Fan Current  
(mA)  
Suggested  
BE(sat) GS  
CEO DS  
Package  
Min. H  
FE  
(V)  
(V)  
R
()  
BASE  
800  
800  
301  
Note 1  
Note 1  
Note 1  
Note 1  
MMBT2222A  
MPS2222A  
MPS6602  
SI2302  
MGSF1N02E  
SI4410  
SOT-23  
TO-92  
TO-92  
SOT-23  
SOT-23  
SO-8  
1.2  
1.2  
1.2  
2.5  
2.5  
4.5  
4.5  
50  
50  
50  
NA  
NA  
NA  
NA  
40  
40  
40  
20  
20  
30  
60  
150  
150  
500  
500  
500  
1000  
500  
SI2308  
SOT-23  
Note 1: A series gate resistor may be used in order to control the MOSFET turn-on and turn-off times.  
2002 Microchip Technology Inc.  
DS21449C-page 13  
TC649  
A base-current limiting resistor is required with bipolar  
transistors (Figure 5-7). The correct value for this  
resistor can be determined as follows:  
V
DD  
V
V
V
= VRSENSE + V  
+ V  
RBASE  
OH  
BE(SAT)  
x R  
SENSE  
= I  
RSENSE  
RBASE  
BASE  
FAN  
= R  
x I  
BASE  
BASE  
Fan  
I
= I  
/ h  
FAN FE  
V
is specified as 80% of V  
in Section 1.0,  
DD  
OH  
“Electrical Characteristics”; V  
is given in the cho-  
BE(SAT)  
R
BASE  
sen transistor data sheet. It is now possible to solve for  
R
V
= 80% V  
DD  
OH  
Q
R
1
.
+
BE  
+
BASE  
V
R
BASE  
V
(SAT)  
+
EQUATION  
V
- V  
- V  
BE(SAT) RSENSE  
BASE  
OH  
V
R
R
=
SENSE  
SENSE  
BASE  
I
Some applications benefit from the fan being powered  
from a negative supply to keep motor noise out of the  
positive supply rails. This can be accomplished as  
GND  
shown in Figure 5-8, with zener diode D offsetting the  
1
FIGURE 5-7:  
BASE  
Circuit For Determining  
-12V power supply voltage, holding transistor Q off  
1
R
.
when V  
is low. When V  
is high, the voltage at  
OUT  
OUT  
OUT  
the anode of D increases by V  
, causing Q to turn  
1
1
on. Operation is otherwise the same as in the case of  
fan operation from +12V.  
+5V  
V
DD  
R *  
2
2.2 kΩ  
V
OUT  
D
1
12.0V  
Zener  
FAN  
TC649  
Q *  
1
R *  
4
R *  
3
10 kΩ  
2.2 Ω  
GND  
-12V  
Note: * Value depends on the specific application and is shown for example only.  
See Section 5.0, "Typical Applications", for more details.  
FIGURE 5-8:  
Powering the Fan from a -12V Supply.  
DS21449C-page 14  
2002 Microchip Technology Inc.  
TC649  
a high impedance source (such as a thermistor). Addi-  
5.6  
Latch-up Considerations  
tionally, the V input should be bypassed with a 1 µF  
DD  
As with any CMOS IC, the potential exists for latch-up  
if signals are applied to the device which are outside  
the power supply range. This is of particular concern  
during power-up if the external circuitry (such as the  
capacitor with grounds being kept as short as possible.  
To keep fan noise off the TC649 ground pin, individual  
ground returns for the TC649 and the low side of the  
fan current sense resistor should be used.  
sensor network, V divider or shutdown circuit) are  
AS  
powered by a supply different from that of the TC649.  
Design Example  
Care should be taken to ensure that the TC649’s V  
DD  
Step 1. Calculate R and R based on using an NTC  
supply powers up first. If possible, the networks  
attached to V and V should connect to the V sup-  
1
2
having a resistance of 10 kat T  
(25°C)  
MIN  
IN  
AS  
DD  
and 4.65 kat T  
(45°C) (see Figure 5-9).  
ply at the same physical location as the IC itself. Even  
if the IC and any external networks are powered by the  
same supply, physical separation of the connecting  
points can result in enough parasitic capacitance and/  
or inductance in the power supply connections to delay  
one power supply “routing” versus another.  
MAX  
R = 20.5 kΩ  
1
R = 3.83 kΩ  
2
Step 2. Set auto-shutdown Level.  
V
= 1.8V.  
AS  
Limit the divider current to 100 µA  
R = 33 kΩ  
R = 18 kΩ  
5.7  
Power Supply Routing and  
Bypassing  
5
6
Step 3. Design the output circuit.  
Noise present on the V and V inputs may cause  
IN  
AS  
Maximum fan motor current = 250 mA.  
erroneous operation of the FAULT output. As a result,  
these inputs should be bypassed with a 0.01 µF  
capacitor mounted as close to the package as possible.  
Q beta is chosen at 50 from which  
1
R = 800 Ω.  
7
This is especially true of V , which is usually drive from  
IN  
+5V  
+12V  
+5V  
C
1 µF  
B
NTC  
10 kΩ  
@ 25˚C  
R
1
Open-  
Drain  
Device  
20.5 kΩ  
4
8
Fan  
1
RESET  
Shutdown  
V
V
DD  
GND  
IN  
C
B
R
2
0.01 µF  
6
Fan Fault  
Q
1
FAULT  
3.83 kΩ  
(Optional)  
R
800 Ω  
+5V  
7
TC649  
7
5
V
R
33 kΩ  
OUT  
5
3
V
AS  
C
B
SENSE  
0.01 µF  
C
0.1 µF  
2
R
18 kΩ  
SENSE  
6
C
F
R
SENSE  
2.2 Ω  
C
1 µF  
1
FIGURE 5-9:  
Design Example.  
2002 Microchip Technology Inc.  
DS21449C-page 15  
TC649  
(5% tolerance) form a crude 3-bit DAC that translates  
this 3-bit code from the processor's outputs into a 1.6V  
DC control signal. A monolithic DAC or digital pot may  
be used instead of the circuit shown in Figure 5-10.  
5.8  
TC649 as a Microcontroller  
Peripheral  
In a system containing a microcontroller or other host  
intelligence, the TC649 can be effectively managed as  
a CPU peripheral. Routine fan control functions can be  
performed by the TC649 without processor interven-  
tion. The microcontroller receives temperature data  
from one or more points throughout the system. It  
calculates a fan operating speed based on an algorithm  
specifically designed for the application at hand. The  
processor controls fan speed using complementary  
With V set at 1.8V, the TC649 enters auto-shutdown  
AS  
when the processor's output code is 000[B]. Output  
codes 001[B] to 111[B] operate the fan from roughly  
40% to 100% of full speed. An open-drain output from  
the processor (I/O0) can be used to reset the TC649  
following detection of a fault condition. The FAULT out-  
put can be connected to the processor's interrupt input  
or to another I/O pin for polled operation.  
port bits I/O1 through I/O3. Resistors R through R  
1
6
.
+12V  
+5V  
(RESET) (Optional)  
Open-Drain  
Output  
I/O0  
I/O1  
+5V  
Fan  
1
R
110 kΩ  
(MSB)  
1
2
+
1µF  
8
V
V
DD  
C
IN  
B
C
B
R
2
1 µF  
R
800 Ω  
Analog or Digital  
Temperature Data from  
One or more Sensors  
CMOS  
Outputs  
240 kΩ  
9
.01 µF  
I/O2  
I/O3  
7
R
3
360 kΩ  
V
C
OUT  
2N2222A  
F
+5V  
TC649  
R
33 kΩ  
7
R
18 kΩ  
4
R
10  
3
B
CMOS  
Microcontroller  
6
5
(LSB)  
R
5
V
AS  
10 kΩ  
FAULT  
C
1.5 kΩ  
+5V  
+5V  
R
8
.01µF  
4
0.1 µF  
18 kΩ  
R
6
GND  
SENSE  
1 kΩ  
R
11  
2.2 Ω  
GND  
INT  
FIGURE 5-10:  
TC649 as a Microcontroller Peripheral.  
vs.Temperature  
V
RELEASE  
1.0  
V
= 5.5V  
= 5.0V  
DD  
0.9  
0.8  
0.7  
V
DD  
V
= 4.0V  
DD  
0.6  
0.5  
0.4  
V
= 3.0V  
DD  
0˚C  
25˚C  
85˚C  
TEMPERATURE  
VRELEASE vs. Temperature.  
FIGURE 5-11:  
DS21449C-page 16  
2002 Microchip Technology Inc.  
TC649  
6.0  
6.1  
PACKAGING INFORMATION  
Package Marking Information  
8-Lead PDIP (300 mil)  
Example:  
XXXXXXXX  
NNN  
TC649VPA  
025  
YYWW  
0215  
8-Lead SOIC (150 mil)  
Example:  
XXXXXXXX  
YYWW  
TC649VOA  
0215  
NNN  
025  
Example:  
8-Lead MSOP  
TC649E  
XXXXXX  
YWWNNN  
215025  
Legend: XX...X Customer specific information*  
YY  
WW  
NNN  
Year code (last 2 digits of calendar year)  
Week code (week of January 1 is week ‘01’)  
Alphanumeric traceability code  
Note:  
In the event the full Microchip part number cannot be marked on one line, it will  
be carried over to the next line thus limiting the number of available characters  
for customer specific information.  
*
Standard marking consists of Microchip part number, year code, week code, traceability code (facility  
code, mask rev#, and assembly code). For marking beyond this, certain price adders apply. Please check  
with your Microchip Sales Office.  
2002 Microchip Technology Inc.  
DS21449C-page 17  
TC649  
8-Lead Plastic Dual In-line (P) – 300 mil (PDIP)  
E1  
D
2
n
1
α
E
A2  
A
L
c
A1  
β
B1  
B
p
eB  
Units  
Dimension Limits  
INCHES*  
NOM  
MILLIMETERS  
MIN  
MAX  
MIN  
NOM  
8
MAX  
n
p
A
A2  
A1  
E
E1  
D
L
c
B1  
B
Number of Pins  
Pitch  
Top to Seating Plane  
Molded Package Thickness  
Base to Seating Plane  
Shoulder to Shoulder Width  
Molded Package Width  
Overall Length  
Tip to Seating Plane  
Lead Thickness  
Upper Lead Width  
Lower Lead Width  
Overall Row Spacing  
Mold Draft Angle Top  
Mold Draft Angle Bottom  
8
.100  
.155  
.130  
2.54  
3.94  
3.30  
.140  
.170  
.145  
3.56  
2.92  
4.32  
3.68  
.115  
.015  
.300  
.240  
.360  
.125  
.008  
.045  
.014  
.310  
5
0.38  
7.62  
6.10  
9.14  
3.18  
0.20  
1.14  
0.36  
7.87  
5
.313  
.250  
.373  
.130  
.012  
.058  
.018  
.370  
10  
.325  
.260  
.385  
.135  
.015  
.070  
.022  
.430  
15  
7.94  
6.35  
9.46  
3.30  
0.29  
1.46  
0.46  
9.40  
10  
8.26  
6.60  
9.78  
3.43  
0.38  
1.78  
0.56  
10.92  
15  
§
eB  
α
β
5
10  
15  
5
10  
15  
* Controlling Parameter  
§ Significant Characteristic  
Notes:  
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed  
.010” (0.254mm) per side.  
JEDEC Equivalent: MS-001  
Drawing No. C04-018  
DS21449C-page 18  
2002 Microchip Technology Inc.  
TC649  
8-Lead Plastic Small Outline (SN) – Narrow, 150 mil (SOIC)  
E
E1  
p
D
2
B
n
1
h
α
45×  
c
A2  
A
f
β
L
A1  
Units  
INCHES*  
NOM  
MILLIMETERS  
Dimension Limits  
MIN  
MAX  
MIN  
NOM  
8
MAX  
n
p
A
A2  
A1  
E
E1  
D
h
L
f
Number of Pins  
Pitch  
Overall Height  
8
.050  
.061  
.056  
.007  
.237  
.154  
.193  
.015  
.025  
4
1.27  
.053  
.069  
1.35  
1.32  
1.55  
1.42  
0.18  
6.02  
3.91  
4.90  
0.38  
0.62  
4
1.75  
1.55  
0.25  
6.20  
3.99  
5.00  
0.51  
0.76  
8
Molded Package Thickness  
Standoff  
.052  
.004  
.228  
.146  
.189  
.010  
.019  
0
.061  
.010  
.244  
.157  
.197  
.020  
.030  
8
§
0.10  
5.79  
3.71  
4.80  
0.25  
0.48  
0
Overall Width  
Molded Package Width  
Overall Length  
Chamfer Distance  
Foot Length  
Foot Angle  
c
Lead Thickness  
Lead Width  
.008  
.013  
0
.009  
.017  
12  
.010  
.020  
15  
0.20  
0.33  
0
0.23  
0.42  
12  
0.25  
0.51  
15  
B
α
β
Mold Draft Angle Top  
Mold Draft Angle Bottom  
0
12  
15  
0
12  
15  
* Controlling Parameter  
§ Significant Characteristic  
Notes:  
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed  
.010” (0.254mm) per side.  
JEDEC Equivalent: MS-012  
Drawing No. C04-057  
2002 Microchip Technology Inc.  
DS21449C-page 19  
TC649  
8-Lead Plastic Micro Small Outline Package (MS) (MSOP)  
E
p
E1  
D
2
B
n
1
α
A2  
A
c
φ
A1  
(F)  
L
β
Units  
Dimension Limits  
INCHES  
NOM  
MILLIMETERS*  
NOM  
MIN  
MAX  
MIN  
MAX  
n
p
Number of Pins  
Pitch  
8
8
.026  
0.65  
Overall Height  
Molded Package Thickness  
A
A2  
A1  
E
E1  
D
.044  
1.18  
.030  
.034  
.038  
.006  
.200  
.122  
.122  
.028  
.039  
0.76  
0.05  
0.86  
0.97  
0.15  
.5.08  
3.10  
3.10  
0.70  
1.00  
Standoff  
§
.002  
.184  
.114  
.114  
.016  
.035  
Overall Width  
Molded Package Width  
Overall Length  
Foot Length  
Footprint (Reference)  
Foot Angle  
.193  
.118  
.118  
.022  
.037  
4.90  
3.00  
3.00  
0.55  
0.95  
4.67  
2.90  
2.90  
0.40  
0.90  
L
F
φ
0
6
0
6
c
Lead Thickness  
Lead Width  
Mold Draft Angle Top  
Mold Draft Angle Bottom  
.004  
.010  
.006  
.012  
.008  
.016  
0.10  
0.25  
0.15  
0.30  
0.20  
0.40  
B
α
β
7
7
7
7
*Controlling Parameter  
§ Significant Characteristic  
Notes:  
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not  
exceed. 010" (0.254mm) per side.  
Drawing No. C04-111  
DS21449C-page 20  
2002 Microchip Technology Inc.  
TC649  
6.2  
Taping Form  
Component Taping Orientation for 8-Pin SOIC (Narrow) Devices  
User Direction of Feed  
PIN 1  
W
P
Standard Reel Component Orientation  
for TR Suffix Device  
Carrier Tape, Number of Components Per Reel and Reel Size  
Package  
Carrier Width (W)  
Pitch (P)  
Part Per Full Reel  
Reel Size  
8-Pin SOIC (N)  
12 mm  
8 mm  
2500  
13 in  
Component Taping Orientation for 8-Pin MSOP Devices  
User Direction of Feed  
PIN 1  
W
P
Standard Reel Component Orientation  
for TR Suffix Device  
Carrier Tape, Number of Components Per Reel and Reel Size  
Package  
Carrier Width (W)  
Pitch (P)  
Part Per Full Reel  
Reel Size  
8-Pin MSOP  
12 mm  
8 mm  
2500  
13 in  
2002 Microchip Technology Inc.  
DS21449C-page 21  
TC649  
NOTES:  
DS21449C-page 22  
2002 Microchip Technology Inc.  
TC649  
ON-LINE SUPPORT  
Microchip provides on-line support on the Microchip  
World Wide Web site.  
SYSTEMS INFORMATION AND  
UPGRADE HOT LINE  
The Systems Information and Upgrade Line provides  
system users a listing of the latest versions of all of  
Microchip's development systems software products.  
Plus, this line provides information on how customers  
can receive the most current upgrade kits.The Hot Line  
Numbers are:  
1-800-755-2345 for U.S. and most of Canada, and  
1-480-792-7302 for the rest of the world.  
The web site is used by Microchip as a means to make  
files and information easily available to customers. To  
view the site, the user must have access to the Internet  
®
®
and a web browser, such as Netscape or Microsoft  
Internet Explorer. Files are also available for FTP  
download from our FTP site.  
ConnectingtotheMicrochipInternetWebSite  
The Microchip web site is available at the following  
URL:  
092002  
www.microchip.com  
The file transfer site is available by using an FTP ser-  
vice to connect to:  
ftp://ftp.microchip.com  
The web site and file transfer site provide a variety of  
services. Users may download files for the latest  
Development Tools, Data Sheets, Application Notes,  
User's Guides, Articles and Sample Programs. A vari-  
ety of Microchip specific business information is also  
available, including listings of Microchip sales offices,  
distributors and factory representatives. Other data  
available for consideration is:  
• Latest Microchip Press Releases  
Technical Support Section with Frequently Asked  
Questions  
• Design Tips  
• Device Errata  
• Job Postings  
• Microchip Consultant Program Member Listing  
• Links to other useful web sites related to  
Microchip Products  
• Conferences for products, Development Systems,  
technical information and more  
• Listing of seminars and events  
2002 Microchip Technology Inc.  
DS21449C-page23  
TC649  
READER RESPONSE  
It is our intention to provide you with the best documentation possible to ensure successful use of your Microchip prod-  
uct. If you wish to provide your comments on organization, clarity, subject matter, and ways in which our documentation  
can better serve you, please FAX your comments to the Technical Publications Manager at (480) 792-4150.  
Please list the following information, and use this outline to provide us with your comments about this document.  
To:  
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Reader Response  
Total Pages Sent ________  
RE:  
From:  
Name  
Company  
Address  
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Telephone: (_______) _________ - _________  
FAX: (______) _________ - _________  
Application (optional):  
Would you like a reply?  
Y
N
Literature Number:  
DS21449C  
Device:  
TC649  
Questions:  
1. What are the best features of this document?  
2. How does this document meet your hardware and software development needs?  
3. Do you find the organization of this document easy to follow? If not, why?  
4. What additions to the document do you think would enhance the structure and subject?  
5. What deletions from the document could be made without affecting the overall usefulness?  
6. Is there any incorrect or misleading information (what and where)?  
7. How would you improve this document?  
DS21449C-page24  
2002 Microchip Technology Inc.  
TC649  
PRODUCT IDENTIFICATION SYSTEM  
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.  
PART NO.  
Device  
X
/XX  
Examples:  
Temperature Package  
Range  
a)  
b)  
c)  
d)  
TC649VOA: PWM Fan Speed Controller w/  
Auto-Shutdown and Fault Detection, SOIC  
package.  
TC649VUA: PWM Fan Speed Controller w/  
Auto-Shutdown and Fault Detection, MSOP  
package  
TC649VPA: PWM Fan Speed Controller w/  
Auto-Shutdown and Fault Detection, PDIP  
package.  
TC649EOATR: PWM Fan Speed Controller w/  
Auto-Shutdown and Fault Detection, SOIC  
package, Tape and Reel.  
Device:  
TC649:  
PWM Fan Speed Controller w/Auto Shutdown  
and Fault Detection  
Temperature Range:  
Package:  
V
E
=
=
0°C to +85°C  
-40°C to +85°C  
PA  
OA  
UA  
=
=
=
Plastic DIP (300 mil Body), 8-lead *  
Plastic SOIC, (150 mil Body), 8-lead  
Plastic Micro Small Outline (MSOP), 8-lead  
* PDIP package is only offered in the V temp range.  
Sales and Support  
Data Sheets  
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recom-  
mended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:  
1. Your local Microchip sales office  
2. The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277  
3. The Microchip Worldwide Site (www.microchip.com)  
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.  
New Customer Notification System  
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.  
2002 Microchip Technology Inc.  
DS21449C-page25  
TC649  
NOTES:  
DS21449C-page 26  
2002 Microchip Technology Inc.  
Information contained in this publication regarding device  
applications and the like is intended through suggestion only  
and may be superseded by updates. It is your responsibility to  
ensure that your application meets with your specifications.  
No representation or warranty is given and no liability is  
assumed by Microchip Technology Incorporated with respect  
to the accuracy or use of such information, or infringement of  
patents or other intellectual property rights arising from such  
use or otherwise. Use of Microchip’s products as critical com-  
ponents in life support systems is not authorized except with  
express written approval by Microchip. No licenses are con-  
veyed, implicitly or otherwise, under any intellectual property  
rights.  
Trademarks  
The Microchip name and logo, the Microchip logo, KEELOQ,  
MPLAB, PIC, PICmicro, PICSTART and PRO MATE are  
registered trademarks of Microchip Technology Incorporated  
in the U.S.A. and other countries.  
FilterLab, microID, MXDEV, MXLAB, PICMASTER, SEEVAL  
and The Embedded Control Solutions Company are  
registered trademarks of Microchip Technology Incorporated  
in the U.S.A.  
dsPIC, dsPICDEM.net, ECONOMONITOR, FanSense,  
FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP,  
ICEPIC, microPort, Migratable Memory, MPASM, MPLIB,  
MPLINK, MPSIM, PICC, PICDEM, PICDEM.net, rfPIC, Select  
Mode and Total Endurance are trademarks of Microchip  
Technology Incorporated in the U.S.A. and other countries.  
Serialized Quick Turn Programming (SQTP) is a service mark  
of Microchip Technology Incorporated in the U.S.A.  
All other trademarks mentioned herein are property of their  
respective companies.  
© 2002, Microchip Technology Incorporated, Printed in the  
U.S.A., All Rights Reserved.  
Printed on recycled paper.  
Microchip received QS-9000 quality system  
certification for its worldwide headquarters,  
design and wafer fabrication facilities in  
Chandler and Tempe, Arizona in July 1999  
and Mountain View, California in March 2002.  
The Company’s quality system processes and  
procedures are QS-9000 compliant for its  
®
PICmicro 8-bit MCUs, KEELOQ® code hopping  
devices, Serial EEPROMs, microperipherals,  
non-volatile memory and analog products. In  
addition, Microchip’s quality system for the  
design and manufacture of development  
systems is ISO 9001 certified.  
2002 Microchip Technology Inc.  
DS21449C - page 27  
M
WORLDWIDE SALES AND SERVICE  
Japan  
AMERICAS  
ASIA/PACIFIC  
Microchip Technology Japan K.K.  
Benex S-1 6F  
Corporate Office  
Australia  
2355 West Chandler Blvd.  
Microchip Technology Australia Pty Ltd  
Suite 22, 41 Rawson Street  
Epping 2121, NSW  
3-18-20, Shinyokohama  
Kohoku-Ku, Yokohama-shi  
Kanagawa, 222-0033, Japan  
Tel: 81-45-471- 6166 Fax: 81-45-471-6122  
Chandler, AZ 85224-6199  
Tel: 480-792-7200 Fax: 480-792-7277  
Technical Support: 480-792-7627  
Web Address: http://www.microchip.com  
Australia  
Tel: 61-2-9868-6733 Fax: 61-2-9868-6755  
Korea  
Rocky Mountain  
China - Beijing  
Microchip Technology Korea  
168-1, Youngbo Bldg. 3 Floor  
Samsung-Dong, Kangnam-Ku  
Seoul, Korea 135-882  
2355 West Chandler Blvd.  
Chandler, AZ 85224-6199  
Tel: 480-792-7966 Fax: 480-792-4338  
Microchip Technology Consulting (Shanghai)  
Co., Ltd., Beijing Liaison Office  
Unit 915  
Bei Hai Wan Tai Bldg.  
Tel: 82-2-554-7200 Fax: 82-2-558-5934  
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Tel: 86-10-85282100 Fax: 86-10-85282104  
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Tel: 770-640-0034 Fax: 770-640-0307  
China - Chengdu  
#07-02 Prime Centre  
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Tel: 978-692-3848 Fax: 978-692-3821  
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Microchip Technology (Barbados) Inc.,  
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China - Fuzhou  
Dallas  
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Room 701, Bldg. B  
Tel: 43-7242-2244-399  
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Tel: 86-755-2350361 Fax: 86-755-2366086  
San Jose  
China - Hong Kong SAR  
Batiment A - ler Etage  
Microchip Technology Inc.  
2107 North First Street, Suite 590  
San Jose, CA 95131  
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Unit 901-6, Tower 2, Metroplaza  
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Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79  
Germany  
Tel: 408-436-7950 Fax: 408-436-7955  
Kwai Fong, N.T., Hong Kong  
Microchip Technology GmbH  
Steinheilstrasse 10  
Tel: 852-2401-1200 Fax: 852-2401-3431  
Toronto  
6285 Northam Drive, Suite 108  
Mississauga, Ontario L4V 1X5, Canada  
Tel: 905-673-0699 Fax: 905-673-6509  
India  
D-85737 Ismaning, Germany  
Tel: 49-89-627-144 0 Fax: 49-89-627-144-44  
Microchip Technology Inc.  
India Liaison Office  
Italy  
Divyasree Chambers  
Microchip Technology SRL  
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Tel: 91-80-2290061 Fax: 91-80-2290062  
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Tel: 39-039-65791-1 Fax: 39-039-6899883  
United Kingdom  
Microchip Ltd.  
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Winnersh Triangle  
Wokingham  
Berkshire, England RG41 5TU  
Tel: 44 118 921 5869 Fax: 44-118 921-5820  
08/01/02  
DS21449C-page 28  
2002 Microchip Technology Inc.  

TC649VOATR CAD模型

  • 引脚图

  • 封装焊盘图

  • TC649VOATR 替代型号

    型号 制造商 描述 替代类型 文档
    TC649VOA MICROCHIP PWM Fan Speed Controller with Auto-Shutdown a 类似代替

    TC649VOATR 相关器件

    型号 制造商 描述 价格 文档
    TC649VPA MICROCHIP PWM Fan Speed Controller with Auto-Shutdown and FanSense⑩ Technology 获取价格
    TC649VUA MICROCHIP PWM Fan Speed Controller with Auto-Shutdown and FanSense⑩ Technology 获取价格
    TC649VUATR MICROCHIP BRUSHLESS DC MOTOR CONTROLLER, PDSO8, PLASTIC, MSOP-8 获取价格
    TC649_13 MICROCHIP PWM Fan Speed Controller with Auto-Shutdown and FanSense™ Technology 获取价格
    TC65 CDE Axial Leaded Aluminum Electrolytic Capacitors 获取价格
    TC650 MICROCHIP Tiny Integrated Temperature Sensor & Brushless DC Fan Controller with Over-Temperature Alert 获取价格
    TC6501 MICROCHIP Ultra Small Temperature Switches with Pin Selectable Hysteresis 获取价格
    TC6501P0105VCT MICROCHIP Adding Intelligence to Lighting Applications 获取价格
    TC6501P0115VCT MICROCHIP Adding Intelligence to Lighting Applications 获取价格
    TC6501P0120VCT MICROCHIP Adding Intelligence to Lighting Applications 获取价格

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