7R24FLE241I25

更新时间:2024-12-05 04:47:56
品牌:MICROSEMI
描述:Flash Card, 12MX16, 150ns, CARD-68

7R24FLE241I25 概述

Flash Card, 12MX16, 150ns, CARD-68

7R24FLE241I25 数据手册

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PCMCIA Flash Memory Card  
FLE Series  
White Electronic Designs  
PCMCIA Flash Memory Card  
8MB Through 64 MB (AMD based)  
FEATURES  
ARCHITECTURE OVERVIEW  
„
„
„
Very High Density Linear Flash Card  
WEDC’s FLE series is designed to support up to twenty (see  
Block diagram) 32Mb components, providing a wide range  
of density options. Cards are based on the Am29F032  
(32Mb) device for 5V only applications. The device code  
for theAm29F032 is 41h and the manufacturer’s ID is 01h.  
Systems should be able to recognize these codes. Cards  
utilizing 32Mb components provide densities ranging from  
8MB to 64MB in 8MB increments.  
Supports 5V only systems  
Based on AMD Flash Components  
• Low standby power without entering reset mode  
• Allows standard access from standby mode  
Fast Read Performance  
„
• 150ns Maximum Access Time  
x8/ x16 Data Interface  
In support of the PC Card (PCMCIA) standard for word  
wide access, devices are paired. Therefore, the Flash  
array is structured in 64K word blocks. Write, read and  
block erase operations can be performed as either a  
word or byte wide operation . By multiplexing A0, CE1#  
and CE2#, 8-bit hosts can access all data on data lines  
DQ0 - DQ7. The FLE series cards conform with the PC  
Card Standard (formerly PCMCIA) and supported JEIDA,  
providing electrical and physical compatibility. The PC  
Card form factor offers an industry standard pinout and  
mechanical outline, allowing density upgrades without  
system design changes.  
„
„
High Performance Random Writes  
• 7μs Typical Word Write Time  
„
Automated Write and Erase Algorithms  
• AMD Command Set  
„
„
„
1,000,000 Erase Cycles per Block  
64K word (128kB) symmetrical Block Architecture  
PC Card Standard Type I Form Factor  
WEDC’s standard cards are shipped with WEDC’s  
silkscreen design. Cards are also available with blank  
housings (no silkscreen). The blank housings are available  
in both a recessed (for label) and at housing. Please  
contact your WEDC sales representative for further  
information on Custom artwork.  
GENERAL DESCRIPTION  
WEDC’s PCMCIA Flash memory cards offer the highest  
density, linear Flash solid state storage solutions for code  
and data storage, high performance disk emulation and  
execute in place (XIP) applications in mobile PC and  
dedicated (embedded) equipment.  
Packaged in a PCMCIAtype I housing, each card contains  
a connector, an array of Flash memories packaged in  
TSOP packages and card control logic. The card control  
logic provides the system interface and controls the  
internal Flash memories. Combined with le management  
software, such as Flash Translation Layer (FTL), WEDC  
Flash cards provide removable high-performance disk  
emulation.  
The WEDC FLE series is based onAMD Flash memories.  
The FLE series offers byte wide and word wide operation,  
low power modes and Card Information Structure (CIS)  
for easy identication of card characteristics.  
Note: Standard options include attribute memory. Cards without attribute memory are  
available. Cards are also available with or without a hardware write protect switch.  
August 2000  
Rev. 4  
1
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  
PCMCIA Flash Memory Card  
FLE Series  
White Electronic Designs  
FLE BLOCK DIAGRAM  
Device type  
Manuf ID  
Device ID  
Am29F032  
01H  
41H  
CSn  
Device Pair (N/2 - 1)  
Device (N-1)  
Device (N-2)  
Array  
Address  
Bus  
ADDRESS  
ADDRESS BUS  
A1-A25  
BUFFER  
Control  
Address  
Bus  
M Res  
WE#  
OE#  
WL#  
RL#  
WH#  
Control Logic  
PCMCIA Interface  
CE2#  
CE1#  
RH#  
Qn  
CSn  
Device Pair 1  
REG#  
A0  
WP  
Q2  
Q0  
Device 3  
Device 1  
Device 2  
Device 0  
CS1  
CS0  
CS0  
At/Reg enable  
Ctrl  
Device Pair 0  
Vcc  
WL# RL#  
WH# RH#  
DATA  
BUS  
DATA  
BUS  
Vcc  
0000h  
attrib. mem  
CIS  
Q8-Q15  
Q0-Q7  
EEPROM 2kB  
control  
Q0-Q7  
Vcc  
I/O buffer  
DATA  
BUS  
DATA  
BUS  
D8-D15  
D0-D7  
August 2000  
Rev. 4  
2
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  
PCMCIA Flash Memory Card  
FLE Series  
White Electronic Designs  
PINOUT  
Pin  
1
Signal name  
GND  
DQ3  
DQ4  
DQ5  
DQ6  
DQ7  
CE1#  
A10  
I/O  
Function  
Ground  
Active  
Pin  
35  
36  
37  
38  
39  
40  
41  
42  
43  
44  
45  
46  
47  
48  
49  
50  
51  
52  
53  
54  
55  
56  
57  
58  
59  
60  
61  
62  
63  
64  
65  
66  
67  
68  
Signal name  
GND  
CD1#  
DQ11  
DQ12  
DQ13  
DQ14  
DQ15  
CE2#  
VS1  
I/O  
Function  
Ground  
Active  
2
I/O  
Data bit 3  
O
I/O  
I/O  
I/O  
I/O  
I
Card Detect 1  
Data bit 11  
LOW  
3
I/O  
Data bit 4  
4
I/O  
Data bit 5  
Data bit 12  
5
I/O  
Data bit 6  
Data bit 13  
6
I/O  
Data bit 7  
Data bit 14  
7
I
I
Card enable 1  
Address bit 10  
Output enable  
Address bit 11  
Address bit 9  
Address bit 8  
Address bit 13  
Address bit 14  
Write Enable  
Ready/Busy  
Supply Voltage  
Prog. Voltage  
Address bit 16  
Address bit 15  
Address bit 12  
Address bit 7  
Address bit 6  
Address bit 5  
Address bit 4  
Address bit 3  
Address bit 2  
Address bit 1  
Address bit 0  
Data bit 0  
LOW  
LOW  
Data bit 15  
8
I
Card Enable 2  
Voltage Sense 1  
Reserved  
LOW  
9
OE#  
A11  
I
O
N.C.  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
I
RFU  
A9  
I
RFU  
Reserved  
A8  
I
A17  
I
I
I
I
I
Address bit 17  
Address bit 18  
Address bit 19  
Address bit 20  
Address bit 21  
Supply Voltage  
Prog. Voltage  
Address bit 22  
Address bit 23  
Address bit 24  
Address bit 25  
Voltage Sense 2  
Card Reset  
A13  
I
A18  
A14  
I
A19  
WE#  
RDY/BSY#  
Vcc  
I
LOW  
LOW  
A20  
O
A21  
Vcc  
Vpp1  
A16  
N.C.  
Vpp2  
A22  
N.C.  
I
8MB (3)  
16MB (3)  
32MB (3)  
64MB (3)  
N.C.  
A15  
I
A23  
A12  
I
A24  
A7  
I
A25  
A6  
I
VS2  
O
I
A5  
I
RST  
HIGH  
A4  
I
I
Wait#  
RFU  
O
Extended Bus Cycle  
Reserved  
LOW (2)  
A3  
A2  
I
REG#  
BVD2  
BVD1  
DQ8  
I
Attrib Mem Select  
Bat. Volt. Detect 2  
Bat. Volt. Detect 1  
Data bit 8  
A1  
I
O
(2)  
(2)  
A0  
I
O
DQ0  
DQ1  
DQ2  
WP  
I/O  
I/O  
I/O  
O
I/O  
I/O  
O
Data bit 1  
DQ9  
Data bit 9  
Data bit 2  
DQ10  
CD2#  
GND  
Data bit 10  
Write Potect  
Ground  
HIGH  
O
Card Detect 2  
Ground  
LOW  
GND  
Notes:  
1. RDY/BSY is an open drain output, external pull-up resistor is required.  
2. Wait#, BVD1 and BVD2 are driven high for compatibility.  
3. Shows density for which specied address bit is MSB. Higher order address bits are  
no connects (i.e., 16MB A23 is MSB A24, A25 are NC).  
August 2000  
Rev. 4  
3
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  
PCMCIA Flash Memory Card  
FLE Series  
White Electronic Designs  
PACKAGE DIMENSIONS  
0.063  
3.370  
0.039  
2.126  
0.039  
0.400  
0.130  
MAX.  
August 2000  
Rev. 4  
4
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  
PCMCIA Flash Memory Card  
FLE Series  
White Electronic Designs  
CARD SIGNAL DESCRIPTION  
Symbol  
Type  
Name and Function  
A0 - A25  
INPUT  
ADDRESS INPUTS: A0 through A25 enable direct addressing of up to 64MB of memory on the card. Signal A0 is not  
used in word access mode. A25 is the most signicant bit  
DQ0 - DQ15  
CE1#, CE2#  
INPUT/OUTPUT  
INPUT  
DATA INPUT/OUTPUT: DQ0 THROUGH DQ15 constitute the bi-directional databus. DQ15 is the MSB.  
CARD ENABLE 1 AND 2: CE1# enables even byte accesses, CE2# enables odd byte accesses. Multiplexing A0,  
CE1# and CE2# allows 8-bit hosts to access all data on DQ0 - DQ7.  
OE#  
INPUT  
OUTPUT ENABLE: Active low signal gating read data from the memory card.  
WRITE ENABLE: Active low signal gating write data to the memory card.  
WE#  
INPUT  
RDY/BSY#  
OUTPUT  
READY/BUSY OUTPUT: Indicates status of internally timed erase or program algorithms. A high output indicates that  
the card is ready to accept accesses. A low output indicates that one or more devices in the memory card are busy  
with internally timed erase or write activities.  
CD1#, CD2#  
WP  
OUTPUT  
OUTPUT  
CARD DETECT 1 and 2: Provide card insertion detection. These signals are connected to ground internally on the  
memory card. The host socket interface circuitry shall supply 10K-ohm or larger pull-up resistors on these signal pins.  
WRITE PROTECT: Write protect reects the status of the Write Protect switch on the memory card. WP set to high  
= write protected, providing internal hardware write lockout to the Flash array. If card does not include optional write  
protect switch, this signal will be pulled low internally indicating write protect = “off”.  
VPP1, VPP2  
VCC  
N.C.  
PROGRAM/ERASE POWER SUPPLY: Not connected for 5V only card.  
CARD POWER SUPPLY: 5.0V for all internal circuitry.  
GROUND: for all internal circuitry.  
GND  
REG#  
INPUT  
INPUT  
ATTRIBUTE MEMORY SELECT: provides access to Flash memory card registers and Card Information Structure in  
the Attribute Memory Plane.  
RST  
RESET: Active high signal for placing card in Power-on default state. Reset can be used as a Power-Down signal for  
the memory array.  
WAIT#  
OUTPUT  
OUTPUT  
OUTPUT  
WAIT: This signal is pulled high internally for compatibility. No wait states are generated.  
BVD1, BVD2  
VS1, VS2  
BATTERY VOLTAGE DETECT: These signals are pulled high to maintain SRAM card compatibility.  
VOLTAGE SENSE: Noties the host socket of the card’s VCC requirements. VS1 and VS2 are open to indicate a 5V  
card has been inserted.  
RFU  
N.C.  
RESERVED FOR FUTURE USE  
NO INTERNAL CONNECTION TO CARD: pin may be driven or left oating  
August 2000  
Rev. 4  
5
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  
PCMCIA Flash Memory Card  
FLE Series  
White Electronic Designs  
Absolute Maximum Ratings2  
Notes:  
Operating Temperature TA (ambient)  
1. During transitions, inputs may undershoot to -2.0V or overshoot to VCC +2.0V for  
periods less than 20ns.  
Commercial  
Industrial  
0°C to +60 °C  
2. Stress greater than those listed under “Absolute Maximum ratings” may cause  
permanent damage to the device. This is a stress rating only and functional operation  
at these or any other conditions greater than those indicated in the operational  
sections of this specication is not implied. Exposure to absolute maximum rating  
conditions for extended periods may affect reliability.  
-40°C to +85 °C**  
Storage Temperature  
Commercial  
0°C to +60 °C  
Industrial  
-40°C to +85 °C**  
-0.5V to VCC+0.5V (1)  
-0.5V to +7.0V  
Voltage on any pin relative to VSS  
V
CC supply Voltage relative to VSS  
DC CHARACTERISTICS (1)  
Sym  
Parameter  
Density  
Notes  
Typ(4)  
Max  
Units  
Test Conditions  
(Mbytes)  
ICCR  
VCC Read Current  
All  
40(5)  
75  
mA  
VCC = VCC MAX  
tcycle = 150ns,CMOS levels  
ICCW  
ICCE  
VCC Program Current  
VCC Erase Current  
VCC Standby Current  
All  
All  
30(6)  
30(6)  
50  
40(6)  
40(6)  
200  
mA  
mA  
μA  
ICCS  
8MB  
2,3  
VCC = VCC MAX  
(CMOS)  
Control Signals = VCC  
Reset = VSS, CMOS levels  
64MB  
100  
400  
CMOS Test Conditions: VCC = 5V ± 5%, VIL = VSS ± 0.2V, VIH = VCC ± 0.2V  
Notes:  
1. All currents are RMS values unless otherwise specied. ICCR, ICCW and ICCE are based on Word wide operations.  
2. Control Signals: CE1#, CE2#, OE#, WE#, REG#.  
3. ICCS is specied for lowest density card (8MB for two, 32Mb components) This represents a single pair of devices.  
4. Typical: VCC = 5V, T = +25°C.  
5. The Icc current is typically less then 1mA/MHz per device, with with OE not active.  
6. Icc active while Embedded Program or Erase algorithm is in progress. Value based on one device active.  
Symbol  
Parameter  
Notes  
Min  
Max  
Units  
Test Conditions  
ILI  
Input Leakage Current  
1
±20  
μA  
VCC = VCC MAX  
VIN =VCC or VSS  
ILO  
Output Leakage Current  
1
±20  
μA  
VCC = VCC MAX  
VOUT =VCC or VSS  
VIL  
Input Low Voltage  
Input High Voltage  
Output Low Voltage  
Output High Voltage  
1
1
1
1
1
0
0.8  
VCC+0.5  
0.4  
V
V
V
V
V
VIH  
0.7 VCC  
VOL  
VOH  
VLKO  
IOL = 3.2mA  
IOH = -2.0mA  
VCC-0.4  
3.25  
VCC  
VCC Erase/Program  
Lock Voltage  
Notes:  
1. Values are the same for byte and word wide modes for all card densities.  
2. Exceptions: Leakage currents on CE1#, CE2#, OE#, REG# and WE# will be < 500 μA when VIN = GND due to internal pull-up resistors.  
Leakage currents on RST will be <150μA when VIN=VCC due to internal pull-down resistor.  
August 2000  
Rev. 4  
6
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  
PCMCIA Flash Memory Card  
FLE Series  
White Electronic Designs  
AC CHARACTERISTICS  
Read Timing Parameters  
150ns  
SYM (PCMCIA)  
tRC  
Parameter  
Min  
Max  
Unit  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Read Cycle Time  
150  
ta(A)  
Address Access Time  
Card Enable Access Time  
Output Enable Access Time  
Address Setup Time  
Card Enable Setup Time  
Address Hold Time  
150  
150  
75  
ta(CE)  
ta(OE)  
tsu(A)  
20  
0
tsu(CE)  
th(A)  
20  
20  
th(CE)  
tv(A)  
Card Enable Hold Time  
Output Hold from Address Change  
Output Disable Time from CE#  
Output Disable Time from OE#  
Output Enable Time from CE#  
Output Enable Time from OE#  
0
tdis(CE)  
tdis(OE)  
75  
75  
t
en(CE)  
5
5
ten(CE)  
Note: AC timing diagrams and characteristics are guaranteed to meet or exceed PCMCIA 2.1 specications.  
Read Timing Diagram  
tc(R)  
th(A)  
ta(A)  
A[25::0], REG#  
CE1#, CE2#  
tv(A)  
ta(CE)  
tsu(CE)  
NOTE 1  
NOTE 1  
th(CE)  
ta(OE)  
tsu(A)  
tdis(CE)  
OE#  
tdis(OE)  
ten(OE)  
D[15::0]  
DATA VALID  
Note: Signal may be high or low in this area.  
August 2000  
Rev. 4  
7
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  
PCMCIA Flash Memory Card  
FLE Series  
White Electronic Designs  
AC CHARACTERISTICS  
Write Timing Parameters  
150ns  
SYM (PCMCIA)  
tCW  
Parameter  
Min  
150  
80  
Max  
Unit  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Write Cycle Time  
tw(WE)  
Write Pulse Width  
Address Setup Time  
Address Setup Time for WE#  
tsu(A)  
20  
tsu(A-WEH)  
tsu(CE-WEH)  
tsu(D-WEH)  
th(D)  
100  
Card Enable Setup Time for WE#  
Data Setup Time for WE#  
Data Hold Time  
100  
50  
20  
trec(WE)  
tdis(WE)  
tdis(OE)  
Write Recover Time  
20  
Output Disable Time from WE#  
Output Disable Time from OE#  
Output Enable Time from WE#  
Output Enable Time from OE#  
Output Enable Setup from WE#  
Output Enable Hold from WE#  
Card Enable Setup Time from OE#  
Card Enable Hold Time  
75  
75  
ten(WE)  
5
5
ten(OE)  
tsu(OE-WE)  
th(OE-WE)  
tsu(CE)  
10  
10  
0
th(CE)  
20  
Note: AC timing diagrams and characteristics are guaranteed to meet or exceed PCMCIA 2.1 specications.  
Write Timing Diagram  
tc(W)  
A [25::0], REG#  
tsu(A-WEH)  
trec(WE)  
th(CE)  
tsu(CE-WEH)  
tsu(CE)  
CE1#, CE2#  
OE#  
NOTE 1  
NOTE 1  
th(OE-WE)  
th(D)  
tw(WE)  
tsu(A)  
WE#  
tsu(OE-WE)  
NOTE 2  
tsu(D-WEH)  
D[15::0](Din)  
DATA INPUT  
tdis(WE)  
tdis(OE)  
ten(OE)  
ten(WE)  
NOTE 2  
D[15::0](Dout)  
Note:  
1. Signal may be high or low in this area.  
2. When the data I/O pins are in the output state, no signals shall be  
applied to the data pins (D15 -D0) by the host system.  
August 2000  
Rev. 4  
8
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  
PCMCIA Flash Memory Card  
FLE Series  
White Electronic Designs  
DATA WRITE AND ERASE PERFORMANCE (1, 3)  
VCC = 5V ± 5%, 0°C TA 60°C  
SYM  
Parameter  
Notes  
2,4  
Min  
Typ(1)  
7
Max  
300  
Units  
Test Conditions  
tWHQV1  
tEHQV1  
Word/Byte Program time  
μs  
Excludes system-level overhead  
tWHQV2  
tEHQV2  
Block Program Time  
Block Erase Time  
2
2
0.5  
1
2.0  
8
sec  
sec  
Excludes 00h prog. prior to erasure  
Notes:  
1. Typical: Nominal voltages and TA = 25°C.  
2. Excludes system overhead.  
3. Valid for all speed options.  
4. To maximize system performance, RDY/BSY# signal or component status register should be polled.  
August 2000  
Rev. 4  
9
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  
PCMCIA Flash Memory Card  
FLE Series  
White Electronic Designs  
PRODUCT MARKING  
WED 7P016FLE2200C15 C995 9915  
EDI  
Date code  
Lot code / trace number  
Part number  
Company Name  
Note:  
Some products are currently marked with our pre-merger company name/  
acronym (EDI). During our transition period, some products will also be marked  
with our new company name/acronym (WED). Starting October 2001 all  
PCMCIA products will be marked only with the WED prex.  
PRODUCT NUMBERING  
7 P 016 FLE22 00 C 20  
Card access time  
15  
25  
150ns  
250ns  
Temperature range  
C
I
Commercial  
Industrial  
0°C to +70°C  
-40°C to +85°C  
Packaging option  
00 Standard, type 1  
Card family and version  
– See Card Family and Version Info. for  
details (next page)  
Card capacity  
016 16MB  
PC card  
P
R
Standard PCMCIA  
Ruggedized PCMCIA  
Card technology  
7
8
FLASH  
SRAM  
August 2000  
Rev. 4  
10  
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  
PCMCIA Flash Memory Card  
FLE Series  
White Electronic Designs  
ORDERING INFORMATION  
EDI7P XXX FLE 22 SS T ZZ  
Based on AM29F032 for 5V only applications  
where  
XXX: 008  
016  
8MB  
16MB  
24MB  
32MB  
40MB  
48MB  
56MB  
64MB  
024  
032  
040  
048  
056  
064  
SS:  
00  
01  
02  
WEDC Silkscreen  
Blank Housing, Type I  
Blank Housing, Type I Recessed  
T:  
C
I
Commercial  
Industrial  
ZZ:  
15  
150ns  
Note: Options without attribute memory and with hardware write protect switch are available.  
Card families:  
FLE 21  
FLE 22  
FLE 23  
FLE 24  
- No Attribute memory, No WP switch  
- With Attribute Memory, No WP switch  
- No Attribute Memory, With WP switch  
- With Attribute Memory, With WP switch  
August 2000  
Rev. 4  
11  
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  
PCMCIA Flash Memory Card  
FLE Series  
White Electronic Designs  
CIS INFORMATION FOR FLE SERIES CARDS  
CIS for FLE22, 150ns  
Address Value Description  
Address Value Description  
Address Value  
Description  
00H  
02H  
04H  
06H  
01H CISTPL_DEVICE  
03H TPL_LINK  
53H writable)  
1EH CARD SIZE: 8MB  
3EH 16MB  
5EH 24MB  
7EH 32MB  
9EH 40MB  
BEH 48MB  
DEH 56MB  
40H  
42H  
44H  
46H  
48H  
4AH  
4CH  
4EH  
50H  
52H  
54H  
56H  
58H  
5AH  
5CH  
5EH  
60H  
62H  
64H  
66H  
68H  
6AH  
6CH  
6EH  
70H  
72H  
74H  
76H  
78H  
7AH  
7CH  
7EH  
80H  
82H  
84H  
86H  
88H  
8AH  
8CH  
8EH  
90H  
92H  
45H  
44H  
49H  
37H  
50H  
30H  
1)  
E
D
I
7
P
0
x
x
F
L
E
2
x
-
-
-
94H  
96H  
98H  
9AH  
9CH  
9EH  
A0H  
A2H  
A4H  
A6H  
A8H  
AAH  
ACH  
AEH  
B0H  
B2H  
B4H  
B6H  
B8H  
BAH  
BCH  
BEH  
C0H  
C2H  
C4H  
C6H  
C8H  
45H  
53H  
49H  
47H  
4EH  
53H  
20H  
49H  
4EH  
43H  
4FH  
52H  
50H  
4FH  
52H  
41H  
54H  
45H  
44H  
20H  
00H  
31H  
39H  
39H  
39H  
00H  
00H  
E
S
I
G
N
S
SPACE  
I
N
C
O
R
P
O
R
A
T
E
1)  
46H  
4CH  
45H  
32H  
2)  
FEH 64MB  
08H  
0AH  
0CH  
0EH  
10H  
12H  
14H  
16H  
18H  
1AH  
1CH  
1EH  
20H  
22H  
24H  
26H  
28H  
2AH  
FFH END OF DEVICE  
18H CISTPL_JEDEC_C  
02H TPL_LINK  
01H AMD - ID  
41H 29F032 - ID  
2DH  
2DH  
2DH  
31H  
35H  
20H  
00H  
43H  
4FH  
50H  
59H  
52H  
49H  
47H  
48H  
54H  
20H  
45H  
4CH  
45E  
43H  
54H  
52H  
4FH  
4EH  
49H  
43H  
20H  
44H  
17H CISTPL_DEVICE_A  
03H TPL_LINK  
1
5
42H EEPROM - 200ns  
01H Device Size = 2KBytes  
FFH END OF TUPLE  
1EH CISTPL_DEVICEGEO  
06H TPL_LINK  
SPACE  
END TEXT  
D
SPACE  
END TEXT  
C
O
P
Y
R
I
G
H
1
9
9
9
02H DGTPL_BUS  
11H DGTPL_EBS  
01H DGTPL_RBS  
01H DGTPL_WBS  
01H DGTPL_PART  
01H FLASH DEVICE  
NON-INTERLEAVED  
20H CISTPL_MANFID  
04H TPL_LINK(04H)  
F6H EDITPLMID_MANF: LSB  
01H EDI PLMID_MANF: MSB  
00H LSB: Number Not Assign.  
00H MSB: Number Not Assign.  
15H CISTPL_VERS1  
47H TPL_LINK  
END TEXT  
END OF LIST  
T
1)  
SPACE  
E
L
E
C
T
R
O
Address Value Description  
2CH  
2EH  
30H  
32H  
34H  
36H  
38H  
3AH  
3CH  
3EH  
4CH  
30  
31  
32  
33  
34  
36  
0
1
2
3
4
6
4EH  
58H  
30  
32  
34  
36  
38  
0
2
4
6
8
N
I
C
04H TPLLV1_MAJOR  
01H TPLLV1_MINOR  
2)  
SPACE  
D
32  
34  
2
4
August 2000  
Rev. 4  
12  
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  
PCMCIA Flash Memory Card  
FLE Series  
White Electronic Designs  
Document Title  
PCMCIA FLASH MEMORY CARD — FLE SERIES  
8MB Through 64 MB (AMD based)  
Revision History  
Rev #  
History  
Release Date Status  
Rev 1  
Rev 2  
Rev 3  
Rev 4  
Initial release  
2-7-98  
5-27-99  
5-31-00  
8-1-00  
Logo change  
Added page 9, heading change on all pages  
Corrected timing errors, pages 6 and 7  
August 2000  
Rev. 4  
13  
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  

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