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1N6373A

更新时间：2025-07-09 06:33:41
品牌：MOTOROLA
描述：Zener Transient Voltage Suppressors Unidirectional and Bidirectional

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1N6373A 概述

Zener Transient Voltage Suppressors Unidirectional and Bidirectional 齐纳瞬态电压抑制器单向和双向

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MOTOROLA  
SEMICONDUCTOR  
TECHNICAL DATA  
1N6373A  
SERIES  
1500 WATT  
1500 Watt MOSORB  
GENERAL DATA APPLICABLE TO ALL SERIES IN  
THIS GROUP  
PEAK POWER  
Zener Transient Voltage Suppressors  
Unidirectional and Bidirectional  
MOSORB  
ZENER OVERVOLTAGE  
TRANSIENT  
SUPPRESSORS  
6.2–250 VOLTS  
1500 WATT PEAK POWER  
5 WATTS STEADY STATE  
Mosorb devices are designed to protect voltage sensitive components from high volt-  
age, high energy transients. They have excellent clamping capability, high surge capabili-  
ty, low zener impedance and fast response time. These devices are Motorola’s exclusive,  
cost-effective, highly reliable Surmetic axial leaded package and are ideally-suited for use  
in communication systems, numerical controls, process controls, medical equipment,  
business machines, power supplies and many other industrial/consumer applications, to  
protect CMOS, MOS and Bipolar integrated circuits.  
Specification Features:  
• Standard Voltage Range — 6.2 to 250 V  
• Peak Power — 1500 Watts @ 1 ms  
• Maximum Clamp Voltage @ Peak Pulse Current  
• Low Leakage < 5 µA Above 10 V  
• UL Recognition  
• Response Time is Typically < 1 ns  
CASE 41A  
PLASTIC  
Mechanical Characteristics:  
CASE: Void-free, transfer-molded, thermosetting plastic  
FINISH: All external surfaces are corrosion resistant and leads are readily solderable  
POLARITY: Cathode indicated by polarity band. When operated in zener mode, will be  
positive with respect to anode  
MOUNTING POSITION: Any  
WAFER FAB LOCATION: Phoenix, Arizona  
ASSEMBLY/TEST LOCATION: Guadalajara, Mexico  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Peak Power Dissipation (1)  
P
PK  
1500  
Watts  
@ T ≤ 25°C  
L
Steady State Power Dissipation  
P
D
5
Watts  
@ T ≤ 75°C, Lead Length = 3/8″  
L
Derated above T = 75°C  
50  
mW/°C  
L
Forward Surge Current (2)  
I
200  
Amps  
FSM  
@ T = 25°C  
A
Operating and Storage Temperature Range  
T , T  
J stg  
– 65 to +175  
°C  
Lead temperature not less than 1/16″ from the case for 10 seconds: 230°C  
NOTES: 1. Nonrepetitive current pulse per Figure 5 and derated above T = 25°C per Figure 2.  
A
NOTES: 2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.  
Devices listed in bold, italic are Motorola preferred devices.  
Motorola TVS/Zener Device Data  
500 Watt Peak Power Data Sheet  
4-1  
*ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) V # = 3.5 V Max, I ** = 100 A) (C suffix denotes standard  
A
F
F
ELECTRICAL CHARACTERISTICS back to back bidirectional versions. Test both polarities)  
Maximum  
Reverse  
Voltage  
Clamping Voltage  
Breakdown  
Voltage  
Maximum  
Reverse  
Stand-Off  
Voltage  
Maximum  
Reverse  
Surge  
@ I  
Peak Pulse  
Current @  
= 1 A  
Peak Pulse  
Current @  
Maximum  
Reverse  
Leakage  
RSM  
(Clamping  
Voltage)  
I
I
= 10 A  
JEDEC  
Device  
Note 1  
V
BR  
Current  
pp1  
pp1  
V
V
C1  
V
Device  
Note 1  
Volts @ I  
V ***  
RWM  
I
@ V  
RSM  
C2  
T
RSM  
RWM  
(Volts)  
(Volts max)  
(Volts max)  
Min  
(mA)  
(Volts)  
(Amps)  
I
(µA)  
R
1N6373  
1N6374  
1N6382  
ICTE-5/MPTE-5  
ICTE-8/MPTE-8  
ICTE-8C/MPTE-8C  
6
9.4  
9.4  
1
1
1
5
8
8
300  
25  
25  
160  
100  
100  
9.4  
15  
15  
7.1  
11.3  
11.4  
7.5  
11.5  
11.6  
1N6375  
1N6383  
1N6376  
1N6384  
ICTE-10/MPTE-10  
ICTE-10C/MPTE-10C  
ICTE-12/MPTE-12  
ICTE-12C/MPTE-12C  
11.7  
11.7  
14.1  
14.1  
1
1
1
1
10  
10  
12  
12  
2
2
2
2
90  
90  
70  
70  
16.7  
16.7  
21.2  
21.2  
13.7  
14.1  
16.1  
16.7  
14.1  
14.5  
16.5  
17.1  
1N6377  
1N6385  
1N6378  
1N6386  
ICTE-15/MPTE-15  
ICTE-15C/MPTE-15C  
ICTE-18/MPTE-18  
ICTE-18C/MPTE-18C  
17.6  
17.6  
21.2  
21.2  
1
1
1
1
15  
15  
18  
18  
2
2
2
2
60  
60  
50  
50  
25  
25  
30  
30  
20.1  
20.8  
24.2  
24.8  
20.6  
21.4  
25.2  
25.5  
1N6379  
1N6387  
1N6380  
1N6388  
ICTE-22/MPTE-22  
ICTE-22C/MPTE-22C  
ICTE-36/MPTE-36  
ICTE-36C/MPTE-36C  
25.9  
25.9  
42.4  
42.4  
1
1
1
1
22  
22  
36  
36  
2
2
2
2
40  
40  
23  
23  
37.5  
37.5  
65.2  
65.2  
29.8  
30.8  
50.6  
50.6  
32  
32  
54.3  
54.3  
1N6381  
1N6389  
ICTE-45/MPTE-45  
ICTE-45C/MPTE-45C  
52.9  
52.9  
1
1
45  
45  
2
2
19  
19  
78.9  
78.9  
63.3  
63.3  
70  
70  
NOTE 1: C suffix denotes standard back-to-back bidirectional versions. Test both polarities. JEDEC device types 1N6382 thru 1N6389 are registered as back to back bidirectional versions and  
do not require a C suffix. 1N6373 thru 1N6381 are registered as unidirectional devices only (no bidirectional option).  
*** Indicates JEDEC registered data.  
*** 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.  
*** A transient suppressor is normally selected according to the maximum reverse stand-off voltage (V  
*** voltage level.  
), which should be equal to or greater than the dc or continuous peak operating  
RWM  
Surge current waveform per Figure 5 and derate per Figure 2 of the General Data — 1500 W at the beginning of this group.  
measured at pulse test current I at an ambient temperature of 25°C.  
V
BR  
T
# V applies to unidirectional devices only.  
F
Motorola TVS/Zener Device Data  
500 Watt Peak Power Data Sheet  
4-2  
100  
NONREPETITIVE  
PULSE WAVEFORM  
SHOWN IN FIGURE 5  
100  
80  
60  
10  
40  
20  
0
1
0.1  
µs  
1
µs  
10  
µ
s
100  
µs  
1 ms  
10 ms  
0
25  
50  
75  
100  
125  
150  
175  
200  
C)  
T , AMBIENT TEMPERATURE (  
°
A
t , PULSE WIDTH  
P
Figure 1. Pulse Rating Curve  
Figure 2. Pulse Derating Curve  
1N6373, ICTE-5, MPTE-5,  
through  
1N6267A/1.5KE6.8A  
through  
1N6389, ICTE-45, C, MPTE-45, C  
1N6303A/1.5KE200A  
10,000  
1000  
10,000  
MEASURED @  
ZERO BIAS  
MEASURED @  
ZERO BIAS  
1000  
100  
10  
MEASURED @  
STAND-OFF  
MEASURED @  
STAND-OFF  
VOLTAGE (V  
)
R
VOLTAGE (V  
)
R
100  
10  
1
10  
100  
1000  
1
10  
100  
1000  
BV, BREAKDOWN VOLTAGE (VOLTS)  
BV, BREAKDOWN VOLTAGE (VOLTS)  
Figure 3. Capacitance versus Breakdown Voltage  
PULSE WIDTH (t ) IS DEFINED  
P
AS THAT POINT WHERE THE  
t
r
3/8″  
PEAK CURRENT DECAYS TO 50%  
OF I  
.
PEAK VALUE — I  
RSM  
10 µs  
RSM  
100  
50  
0
t
≤
3/8  
″
r
5
4
3
I
RSM  
2
HALF VALUE –  
2
t
P
1
0
0
1
2
t, TIME (ms)  
3
4
0
25  
50  
75  
100  
125  
150  
175  
C)  
200  
T , LEAD TEMPERATURE (  
°
L
Figure 4. Steady State Power Derating  
Figure 5. Pulse Waveform  
Devices listed in bold, italic are Motorola preferred devices.  
Motorola TVS/Zener Device Data  
500 Watt Peak Power Data Sheet  
4-3  
1N6373, ICTE-5, MPTE-5,  
through  
1N6267A/1.5KE6.8A  
through  
1N6389, ICTE-45, C, MPTE-45, C  
1N6303A/1.5KE200A  
1000  
500  
1000  
500  
V (NOM) = 6.8 to 13 V  
Z
V (NOM) = 6.8 to 13 V  
Z
T
P
= 25  
°
C
T
P
= 25  
°C  
L
L
20 V  
20 V  
24 V  
t
= 10  
µ
s
t
= 10  
µs  
43 V  
75 V  
43 V  
24 V  
200  
100  
50  
200  
100  
50  
20  
20  
180 V  
120 V  
10  
5
10  
5
2
1
2
1
0.3  
∆
0.5 0.7  
1
2
3
5
7
10  
20 30  
0.3  
0.5 0.7  
∆V , INSTANTANEOUS INCREASE IN V ABOVE V (NOM) (VOLTS)  
Z
1
2
3
5
7
10  
20 30  
V , INSTANTANEOUS INCREASE IN V ABOVE V (NOM) (VOLTS)  
Z
Z
Z
Z
Z
Figure 6. Dynamic Impedance  
1
0.7  
0.5  
0.3  
0.2  
PULSE WIDTH  
10 ms  
0.1  
0.07  
0.05  
1 ms  
0.03  
0.02  
100 µs  
10  
µs  
0.01  
0.1  
0.2  
0.5  
1
2
5
10  
20  
50  
100  
D, DUTY CYCLE (%)  
Figure 7. Typical Derating Factor for Duty Cycle  
APPLICATION NOTES  
RESPONSE TIME  
and placing the suppressor device as close as possible to the  
equipment or components to be protected will minimize this  
overshoot.  
In most applications, the transient suppressor device is  
placed in parallel with the equipment or component to be pro-  
tected. In this situation, there is a time delay associated with  
the capacitance of the device and an overshoot condition as-  
sociated with the inductance of the device and the inductance  
of the connection method. The capacitance effect is of minor  
importance in the parallel protection scheme because it only  
produces a time delay in the transition from the operating volt-  
age to the clamp voltage as shown in Figure A.  
The inductive effects in the device are due to actual turn-on  
time (time required for the device to go from zero current to full  
current) and lead inductance. This inductive effect produces  
an overshoot in the voltage across the equipment or  
component being protected as shown in Figure B. Minimizing  
this overshoot is very important in the application, since the  
main purpose for adding a transient suppressor is to clamp  
voltage spikes. These devices have excellent response time,  
typically in the picosecond range and negligible inductance.  
However, external inductive effects could produce unaccept-  
able overshoot. Proper circuit layout, minimum lead lengths  
Some input impedance represented by Z is essential to  
in  
prevent overstress of the protection device. This impedance  
shouldbeashighaspossible, withoutrestrictingthecircuitop-  
eration.  
DUTY CYCLE DERATING  
The data of Figure 1 applies for non-repetitive conditions  
and at a lead temperature of 25°C. If the duty cycle increases,  
the peak power must be reduced as indicated by the curves of  
Figure 7. Average power must be derated as the lead or  
ambient temperature rises above 25°C. The average power  
derating curve normally given on data sheets may be  
normalized and used for this purpose.  
At first glance the derating curves of Figure 7 appear to be in  
error as the 10 ms pulse has a higher derating factor than the  
10 µs pulse. However, when the derating factor for a given  
pulse of Figure 7 is multiplied by the peak power value of  
Figure 1 for the same pulse, the results follow the expected  
trend.  
Motorola TVS/Zener Device Data  
500 Watt Peak Power Data Sheet  
4-4  
TYPICAL PROTECTION CIRCUIT  
Z
in  
LOAD  
V
V
L
in  
V
(TRANSIENT)  
L
in  
OVERSHOOT DUE TO  
INDUCTIVE EFFECTS  
V
V
V
(TRANSIENT)  
L
in  
V
V
V
in  
t
d
t
= TIME DELAY DUE TO CAPACITIVE EFFECT  
D
t
t
Figure 8.  
Figure 9.  
UL RECOGNITION*  
The entire series has Underwriters Laboratory Recognition  
for the classification of protectors (QVGV2) under the UL  
standard for safety 497B and File #116110. Many competitors  
only have one or two devices recognized or have recognition  
in a non-protective category. Some competitors have no  
recognition at all. With the UL497B recognition, our parts  
successfully passed several tests including Strike Voltage  
Breakdown test, Endurance Conditioning, Temperature test,  
Dielectric Voltage-Withstand test, Discharge test and several  
more.  
Whereas, some competitors have only passed a flammabil-  
ity test for the package material, we have been recognized for  
much more to be included in their Protector category.  
*Applies to 1.5KE6.8A, CA thru 1.5KE250A, CA  
Devices listed in bold, italic are Motorola preferred devices.  
Motorola TVS/Zener Device Data  
500 Watt Peak Power Data Sheet  
4-5  
Transient Voltage Suppressors — Axial Leaded  
1500 Watt Peak Power  
B
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
D
2. CONTROLLING DIMENSION: INCH.  
3. LEAD FINISH AND DIAMETER UNCONTROLLED  
IN DIM P.  
K
P
INCHES  
MILLIMETERS  
DIM  
A
B
D
K
MIN  
MAX  
0.375  
0.205  
0.042  
—
MIN  
9.14  
4.83  
0.97  
25.40  
—
MAX  
9.52  
5.21  
1.07  
—
P
0.360  
0.190  
0.038  
1.000  
—
A
P
0.050  
1.27  
K
CASE 41A-02  
PLASTIC  
(Refer to Section 10 for Surface Mount, Thermal Data and Footprint Information.)  
MULTIPLE PACKAGE QUANTITY (MPQ)  
REQUIREMENTS  
Package Option  
Type No. Suffix  
MPQ (Units)  
Tape and Reel  
RL4  
1.5K  
(Refer to Section 10 for more information on Packaging Specifications.)  
Motorola TVS/Zener Device Data  
500 Watt Peak Power Data Sheet  
4-6  

1N6373A 相关器件

型号 制造商 描述 价格 文档
1N6373BK CENTRAL Trans Voltage Suppressor Diode, 1500W, Unidirectional, 1 Element, Silicon 获取价格
1N6373E3 MICROSEMI Trans Voltage Suppressor Diode, 1500W, 5V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, CASE 1, 2 PIN 获取价格
1N6373E3TR MICROSEMI Trans Voltage Suppressor Diode, 1500W, 5V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, CASE 1, 2 PIN 获取价格
1N6373G ONSEMI 1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors 获取价格
1N6373G LITTELFUSE 元器件封装:轴向; 获取价格
1N6373HE3/51 VISHAY TVS DIODE 5V 7.5V 1.5KE 获取价格
1N6373HE3/54 VISHAY DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT, PLASTIC, CASE 1.5KE, 2 PIN, Transient Suppressor 获取价格
1N6373HE3_A/C VISHAY 反向峰值电压VRWM(V):5V;最小反向击穿电压VBR(V):6V;最大钳位电压Vc(V):7.5V;最大峰值脉冲电流IPP(A):160A;最大峰值脉冲功率Ppk(W):1500W（1.5kW）; 获取价格
1N6373HE3_A/D VISHAY TVS DIODE 5V 7.5V 1.5KE 获取价格
1N6373MPTE-5 MICROSEMI Trans Voltage Suppressor Diode, 1500W, 5V V(RWM), Unidirectional, 1 Element, Silicon 获取价格

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