1N6373A
更新时间：2025-01-23 06:33:41
品牌：MOTOROLA
描述：Zener Transient Voltage Suppressors Unidirectional and Bidirectional
概述
数据手册1N6373A 概述
Zener Transient Voltage Suppressors Unidirectional and Bidirectional 齐纳瞬态电压抑制器单向和双向
1N6373A 数据手册
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SEMICONDUCTOR
TECHNICAL DATA
1N6373A
SERIES
1500 WATT
1500 Watt MOSORB
GENERAL DATA APPLICABLE TO ALL SERIES IN
THIS GROUP
PEAK POWER
Zener Transient Voltage Suppressors
Unidirectional and Bidirectional
MOSORB
ZENER OVERVOLTAGE
TRANSIENT
SUPPRESSORS
6.2–250 VOLTS
1500 WATT PEAK POWER
5 WATTS STEADY STATE
Mosorb devices are designed to protect voltage sensitive components from high volt-
age, high energy transients. They have excellent clamping capability, high surge capabili-
ty, low zener impedance and fast response time. These devices are Motorola’s exclusive,
cost-effective, highly reliable Surmetic axial leaded package and are ideally-suited for use
in communication systems, numerical controls, process controls, medical equipment,
business machines, power supplies and many other industrial/consumer applications, to
protect CMOS, MOS and Bipolar integrated circuits.
Specification Features:
• Standard Voltage Range — 6.2 to 250 V
• Peak Power — 1500 Watts @ 1 ms
• Maximum Clamp Voltage @ Peak Pulse Current
• Low Leakage < 5 µA Above 10 V
• UL Recognition
• Response Time is Typically < 1 ns
CASE 41A
PLASTIC
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are readily solderable
POLARITY: Cathode indicated by polarity band. When operated in zener mode, will be
positive with respect to anode
MOUNTING POSITION: Any
WAFER FAB LOCATION: Phoenix, Arizona
ASSEMBLY/TEST LOCATION: Guadalajara, Mexico
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (1)
P
PK
1500
Watts
@ T ≤ 25°C
L
Steady State Power Dissipation
P
D
5
Watts
@ T ≤ 75°C, Lead Length = 3/8″
L
Derated above T = 75°C
50
mW/°C
L
Forward Surge Current (2)
I
200
Amps
FSM
@ T = 25°C
A
Operating and Storage Temperature Range
T , T
J stg
– 65 to +175
°C
Lead temperature not less than 1/16″ from the case for 10 seconds: 230°C
NOTES: 1. Nonrepetitive current pulse per Figure 5 and derated above T = 25°C per Figure 2.
A
NOTES: 2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
Devices listed in bold, italic are Motorola preferred devices.
Motorola TVS/Zener Device Data
500 Watt Peak Power Data Sheet
4-1
*ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) V # = 3.5 V Max, I ** = 100 A) (C suffix denotes standard
A
F
F
ELECTRICAL CHARACTERISTICS back to back bidirectional versions. Test both polarities)
Maximum
Reverse
Voltage
Clamping Voltage
Breakdown
Voltage
Maximum
Reverse
Stand-Off
Voltage
Maximum
Reverse
Surge
@ I
Peak Pulse
Current @
= 1 A
Peak Pulse
Current @
Maximum
Reverse
Leakage
RSM
(Clamping
Voltage)
I
I
= 10 A
JEDEC
Device
Note 1
V
BR
Current
pp1
pp1
V
V
C1
V
Device
Note 1
Volts @ I
V ***
RWM
I
@ V
RSM
C2
T
RSM
RWM
(Volts)
(Volts max)
(Volts max)
Min
(mA)
(Volts)
(Amps)
I
(µA)
R
1N6373
1N6374
1N6382
ICTE-5/MPTE-5
ICTE-8/MPTE-8
ICTE-8C/MPTE-8C
6
9.4
9.4
1
1
1
5
8
8
300
25
25
160
100
100
9.4
15
15
7.1
11.3
11.4
7.5
11.5
11.6
1N6375
1N6383
1N6376
1N6384
ICTE-10/MPTE-10
ICTE-10C/MPTE-10C
ICTE-12/MPTE-12
ICTE-12C/MPTE-12C
11.7
11.7
14.1
14.1
1
1
1
1
10
10
12
12
2
2
2
2
90
90
70
70
16.7
16.7
21.2
21.2
13.7
14.1
16.1
16.7
14.1
14.5
16.5
17.1
1N6377
1N6385
1N6378
1N6386
ICTE-15/MPTE-15
ICTE-15C/MPTE-15C
ICTE-18/MPTE-18
ICTE-18C/MPTE-18C
17.6
17.6
21.2
21.2
1
1
1
1
15
15
18
18
2
2
2
2
60
60
50
50
25
25
30
30
20.1
20.8
24.2
24.8
20.6
21.4
25.2
25.5
1N6379
1N6387
1N6380
1N6388
ICTE-22/MPTE-22
ICTE-22C/MPTE-22C
ICTE-36/MPTE-36
ICTE-36C/MPTE-36C
25.9
25.9
42.4
42.4
1
1
1
1
22
22
36
36
2
2
2
2
40
40
23
23
37.5
37.5
65.2
65.2
29.8
30.8
50.6
50.6
32
32
54.3
54.3
1N6381
1N6389
ICTE-45/MPTE-45
ICTE-45C/MPTE-45C
52.9
52.9
1
1
45
45
2
2
19
19
78.9
78.9
63.3
63.3
70
70
NOTE 1: C suffix denotes standard back-to-back bidirectional versions. Test both polarities. JEDEC device types 1N6382 thru 1N6389 are registered as back to back bidirectional versions and
do not require a C suffix. 1N6373 thru 1N6381 are registered as unidirectional devices only (no bidirectional option).
*** Indicates JEDEC registered data.
*** 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
*** A transient suppressor is normally selected according to the maximum reverse stand-off voltage (V
*** voltage level.
), which should be equal to or greater than the dc or continuous peak operating
RWM
Surge current waveform per Figure 5 and derate per Figure 2 of the General Data — 1500 W at the beginning of this group.
measured at pulse test current I at an ambient temperature of 25°C.
V
BR
T
# V applies to unidirectional devices only.
F
Motorola TVS/Zener Device Data
500 Watt Peak Power Data Sheet
4-2
100
NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 5
100
80
60
10
40
20
0
1
0.1
µs
1
µs
10
µ
s
100
µs
1 ms
10 ms
0
25
50
75
100
125
150
175
200
C)
T , AMBIENT TEMPERATURE (
°
A
t , PULSE WIDTH
P
Figure 1. Pulse Rating Curve
Figure 2. Pulse Derating Curve
1N6373, ICTE-5, MPTE-5,
through
1N6267A/1.5KE6.8A
through
1N6389, ICTE-45, C, MPTE-45, C
1N6303A/1.5KE200A
10,000
1000
10,000
MEASURED @
ZERO BIAS
MEASURED @
ZERO BIAS
1000
100
10
MEASURED @
STAND-OFF
MEASURED @
STAND-OFF
VOLTAGE (V
)
R
VOLTAGE (V
)
R
100
10
1
10
100
1000
1
10
100
1000
BV, BREAKDOWN VOLTAGE (VOLTS)
BV, BREAKDOWN VOLTAGE (VOLTS)
Figure 3. Capacitance versus Breakdown Voltage
PULSE WIDTH (t ) IS DEFINED
P
AS THAT POINT WHERE THE
t
r
3/8″
PEAK CURRENT DECAYS TO 50%
OF I
.
PEAK VALUE — I
RSM
10 µs
RSM
100
50
0
t
≤
3/8
″
r
5
4
3
I
RSM
2
HALF VALUE –
2
t
P
1
0
0
1
2
t, TIME (ms)
3
4
0
25
50
75
100
125
150
175
C)
200
T , LEAD TEMPERATURE (
°
L
Figure 4. Steady State Power Derating
Figure 5. Pulse Waveform
Devices listed in bold, italic are Motorola preferred devices.
Motorola TVS/Zener Device Data
500 Watt Peak Power Data Sheet
4-3
1N6373, ICTE-5, MPTE-5,
through
1N6267A/1.5KE6.8A
through
1N6389, ICTE-45, C, MPTE-45, C
1N6303A/1.5KE200A
1000
500
1000
500
V (NOM) = 6.8 to 13 V
Z
V (NOM) = 6.8 to 13 V
Z
T
P
= 25
°
C
T
P
= 25
°C
L
L
20 V
20 V
24 V
t
= 10
µ
s
t
= 10
µs
43 V
75 V
43 V
24 V
200
100
50
200
100
50
20
20
180 V
120 V
10
5
10
5
2
1
2
1
0.3
∆
0.5 0.7
1
2
3
5
7
10
20 30
0.3
0.5 0.7
∆V , INSTANTANEOUS INCREASE IN V ABOVE V (NOM) (VOLTS)
Z
1
2
3
5
7
10
20 30
V , INSTANTANEOUS INCREASE IN V ABOVE V (NOM) (VOLTS)
Z
Z
Z
Z
Z
Figure 6. Dynamic Impedance
1
0.7
0.5
0.3
0.2
PULSE WIDTH
10 ms
0.1
0.07
0.05
1 ms
0.03
0.02
100 µs
10
µs
0.01
0.1
0.2
0.5
1
2
5
10
20
50
100
D, DUTY CYCLE (%)
Figure 7. Typical Derating Factor for Duty Cycle
APPLICATION NOTES
RESPONSE TIME
and placing the suppressor device as close as possible to the
equipment or components to be protected will minimize this
overshoot.
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be pro-
tected. In this situation, there is a time delay associated with
the capacitance of the device and an overshoot condition as-
sociated with the inductance of the device and the inductance
of the connection method. The capacitance effect is of minor
importance in the parallel protection scheme because it only
produces a time delay in the transition from the operating volt-
age to the clamp voltage as shown in Figure A.
The inductive effects in the device are due to actual turn-on
time (time required for the device to go from zero current to full
current) and lead inductance. This inductive effect produces
an overshoot in the voltage across the equipment or
component being protected as shown in Figure B. Minimizing
this overshoot is very important in the application, since the
main purpose for adding a transient suppressor is to clamp
voltage spikes. These devices have excellent response time,
typically in the picosecond range and negligible inductance.
However, external inductive effects could produce unaccept-
able overshoot. Proper circuit layout, minimum lead lengths
Some input impedance represented by Z is essential to
in
prevent overstress of the protection device. This impedance
shouldbeashighaspossible, withoutrestrictingthecircuitop-
eration.
DUTY CYCLE DERATING
The data of Figure 1 applies for non-repetitive conditions
and at a lead temperature of 25°C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves of
Figure 7. Average power must be derated as the lead or
ambient temperature rises above 25°C. The average power
derating curve normally given on data sheets may be
normalized and used for this purpose.
At first glance the derating curves of Figure 7 appear to be in
error as the 10 ms pulse has a higher derating factor than the
10 µs pulse. However, when the derating factor for a given
pulse of Figure 7 is multiplied by the peak power value of
Figure 1 for the same pulse, the results follow the expected
trend.
Motorola TVS/Zener Device Data
500 Watt Peak Power Data Sheet
4-4
TYPICAL PROTECTION CIRCUIT
Z
in
LOAD
V
V
L
in
V
(TRANSIENT)
L
in
OVERSHOOT DUE TO
INDUCTIVE EFFECTS
V
V
V
(TRANSIENT)
L
in
V
V
V
in
t
d
t
= TIME DELAY DUE TO CAPACITIVE EFFECT
D
t
t
Figure 8.
Figure 9.
UL RECOGNITION*
The entire series has Underwriters Laboratory Recognition
for the classification of protectors (QVGV2) under the UL
standard for safety 497B and File #116110. Many competitors
only have one or two devices recognized or have recognition
in a non-protective category. Some competitors have no
recognition at all. With the UL497B recognition, our parts
successfully passed several tests including Strike Voltage
Breakdown test, Endurance Conditioning, Temperature test,
Dielectric Voltage-Withstand test, Discharge test and several
more.
Whereas, some competitors have only passed a flammabil-
ity test for the package material, we have been recognized for
much more to be included in their Protector category.
*Applies to 1.5KE6.8A, CA thru 1.5KE250A, CA
Devices listed in bold, italic are Motorola preferred devices.
Motorola TVS/Zener Device Data
500 Watt Peak Power Data Sheet
4-5
Transient Voltage Suppressors — Axial Leaded
1500 Watt Peak Power
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
D
2. CONTROLLING DIMENSION: INCH.
3. LEAD FINISH AND DIAMETER UNCONTROLLED
IN DIM P.
K
P
INCHES
MILLIMETERS
DIM
A
B
D
K
MIN
MAX
0.375
0.205
0.042
—
MIN
9.14
4.83
0.97
25.40
—
MAX
9.52
5.21
1.07
—
P
0.360
0.190
0.038
1.000
—
A
P
0.050
1.27
K
CASE 41A-02
PLASTIC
(Refer to Section 10 for Surface Mount, Thermal Data and Footprint Information.)
MULTIPLE PACKAGE QUANTITY (MPQ)
REQUIREMENTS
Package Option
Type No. Suffix
MPQ (Units)
Tape and Reel
RL4
1.5K
(Refer to Section 10 for more information on Packaging Specifications.)
Motorola TVS/Zener Device Data
500 Watt Peak Power Data Sheet
4-6
1N6373A 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| 1N6373BK | CENTRAL | Trans Voltage Suppressor Diode, 1500W, Unidirectional, 1 Element, Silicon | 获取价格 |
|
| 1N6373E3 | MICROSEMI | Trans Voltage Suppressor Diode, 1500W, 5V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, CASE 1, 2 PIN | 获取价格 |
|
| 1N6373E3TR | MICROSEMI | Trans Voltage Suppressor Diode, 1500W, 5V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, CASE 1, 2 PIN | 获取价格 |
|
| 1N6373G | ONSEMI | 1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors | 获取价格 |
|
| 1N6373HE3/54 | VISHAY | DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT, PLASTIC, CASE 1.5KE, 2 PIN, Transient Suppressor | 获取价格 |
|
| 1N6373HE3_A/D | VISHAY | TVS DIODE 5V 7.5V 1.5KE | 获取价格 |
|
| 1N6373MPTE-5 | MICROSEMI | Trans Voltage Suppressor Diode, 1500W, 5V V(RWM), Unidirectional, 1 Element, Silicon | 获取价格 |
|
| 1N6373MPTE-5C | MICROSEMI | Trans Voltage Suppressor Diode, 1500W, 5V V(RWM), Bidirectional, 1 Element, Silicon | 获取价格 |
|
| 1N6373RL4 | ONSEMI | 1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors | 获取价格 |
|
| 1N6373RL4 | MOTOROLA | 1500W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 41A-02, 2 PIN | 获取价格 |
|
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