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PS2501L-2

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品牌：NEC

描述：HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES

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PS2501L-2 概述

HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES 高隔离电压单晶体管型多光耦合器系列光耦合器

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DATA SHEET

PHOTOCOUPLER

PS2501-1,-2,-4, PS2501L-1,-2,-4

HIGH ISOLATION VOLTAGE

SINGLE TRANSISTOR TYPE

MULTI PHOTOCOUPLER SERIES

−NEPOC^TMSeries−

DESCRIPTION

The PS2501-1, -2, -4 and PS2501L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode

and an NPN silicon phototransistor.

The PS2501-1, -2, -4 are in a plastic DIP (Dual In-line Package) and the PS2501L-1, -2, -4 are lead bending type

(Gull-wing) for surface mount.

FEATURES

•

High isolation voltage (BV = 5 000 Vr.m.s.)

High collector to emitter voltage (V^CEO= 80 V)

High-speed switching (t^r= 3 µs TYP., t^f= 5 µs TYP.)

Ordering number of taping product: PS2501L-1-E3, E4, F3, F4, PS2501L-2-E3, E4

UL approved: File No. E72422 (S)

APPLICATIONS

•

Power supply

Telephone/FAX.

FA/OA equipment

Programmable logic controller

The information in this document is subject to change without notice.

Document No. P10025EJ7V0DS00 (7th edition)

Date Published April 1998 NS CP(K)

Printed in Japan

The mark • shows major revised points.

1988

PS2501-1,-2,-4,PS2501L-1,-2,-4

PACKAGE DIMENSIONS (in millimeters)

DIP Type

PS2501-4 (New Package)

PS2501-1 (New Package)

TOP VIEW

16 15 14

13 12 11

10 9

4.6 ± 0.35

20.3 MAX.

3 4 5 6 7 8

1. Anode

1, 3, 5, 7. Anode

2, 4, 6, 8. Cathode

9,11,13,15. Emitter

10,12,14,16. Collector

2. Cathode

3. Emitter

4. Collector

7.62

0.50 ± 0.10

1.25±0.15

0.50 ± 0.10

0.25

0 to 15˚

0.25

2.54

PS2501-1

PS2501-2

TOP VIEW

7 6 5

10.2 MAX.

5.1 MAX.

1 2 3 4

1. Anode

1, 3. Anode

2. Cathode

3. Emitter

4. Collector

2, 4. Cathode

5, 7. Emitter

6, 8. Collector

7.62

0.50 ± 0.10

1.25±0.15

0.50 ± 0.10

0 to 15˚

0.25

2.54

TOP VIEW

PS2501-4

12 11 10 9

16 15 14 13

20.3 MAX.

1 2 3 4 5 6 7 8

1, 3, 5, 7. Anode

2, 4, 6, 8. Cathode

9,11,13,15. Emitter

10,12,14,16. Collector

7.62

0.50 ± 0.10

1.25±0.15

0 to 15˚

0.25

2.54

Caution New package 1-ch, 4-ch only

PS2501-1,-2,-4,PS2501L-1,-2,-4

Lead Bending Type

PS2501L-4 (New Package)

PS2501L-1 (New Package)

TOP VIEW

16 15 14

13 12 11

10 9

4.6 ± 0.35

20.3 MAX.

3 4 5 6 7 8

1. Anode

1, 3, 5, 7. Anode

2, 4, 6, 8. Cathode

9,11,13,15. Emitter

10,12,14,16. Collector

2. Cathode

3. Emitter

4. Collector

7.62

0.90 ± 0.25

9.60 ± 0.4

0.90 ± 0.25

9.60 ± 0.4

1.25±0.15

0.25

1.25±0.15

0.25

2.54

PS2501L-1

PS2501L-2

TOP VIEW

7 6 5

10.2 MAX.

5.1 MAX.

1 2 3 4

1. Anode

1, 3. Anode

2. Cathode

3. Emitter

4. Collector

2, 4. Cathode

5, 7. Emitter

6, 8. Collector

7.62

0.90 ± 0.25

9.60 ± 0.4

0.90 ± 0.25

9.60 ± 0.4

1.25±0.15

0.25

1.25±0.15

0.25

2.54

PS2501L-4

TOP VIEW

12 11 10 9

16 15 14 13

20.3 MAX.

1 2 3 4 5 6 7 8

1, 3, 5, 7. Anode

2, 4, 6, 8. Cathode

9,11,13,15. Emitter

10,12,14,16. Collector

7.62

0.90 ± 0.25

9.60 ± 0.4

1.25±0.15

0.25

2.54

Caution New package 1-ch, 4-ch only

PS2501-1,-2,-4,PS2501L-1,-2,-4

ABSOLUTE MAXIMUM RATINGS (T^A= 25 °C, unless otherwise specified)

Ratings

Parameter

Symbol

PS2501-1,

PS2501-2,-4

PS2501L-2,-4

Unit

PS2501L-1

Diode

Reverse Voltage

V^R

I^F

Forward Current (DC)

Power Dissipation Derating

Power Dissipation

∆P^D/°C

P^D

1.5

1.2

mW/°C

mW/ch

150

120

Peak Forward Current^*1

I^FP

Transistor Collector to Emitter Voltage

Emitter to Collector Voltage

Collector Current

V^CEO

V^ECO

I^C

mA/ch

mW/°C

mW/ch

Vr.m.s.

°C

Power Dissipation Derating

Power Dissipation

∆P^C/°C

P^C

1.5

1.2

150

120

Isolation Voltage^*2

5 000

Operating Ambient Temperature

Storage Temperature

T^A

−55 to +100

−55 to +150

T^stg

°C

*1 PW = 100 µs, Duty Cycle = 1 %

*2 AC voltage for 1 minute at T^A= 25 °C, RH = 60 % between input and output

PS2501-1,-2,-4,PS2501L-1,-2,-4

ELECTRICAL CHARACTERISTICS (T^A= 25 °C)

Parameter

Symbol

V^F

Conditions

MIN.

TYP.

1.17

MAX.

1.4

Unit

Diode

Forward Voltage

Reverse Current

Terminal Capacitance

I^F= 10 mA

V^R= 5 V

I^R

µA

C^t

V = 0 V, f = 1.0 MHz

V^CE= 80 V, I^F= 0 mA

Transistor Collector to Emitter Dark

Current

I^CEO

100

600

0.3

Coupled

Current Transfer Ratio

CTR

I^F= 5 mA, V^CE= 5 V

I^F= 10 mA, I^C= 2 mA

300

(I^C/I^F)

Collector Saturation

Voltage

V^{CE (sat)}

Isolation Resistance

Isolation Capacitance

Rise Time ^*2

R^I-O

C^I-O

t^r

V^I-O= 1.0 kV^DC

10¹¹

Ω

V = 0 V, f = 1.0 MHz

0.5

µs

V^CC= 10 V, I^C= 2 mA, R^L= 100 Ω

Fall Time ^*2

t^f

*1 CTR rank ( * : only PS2501-1, PS2501L-1)

K* : 300 to 600 (%)

*2 Test circuit for switching time

L* : 200 to 400 (%)

Pulse Input

VCC

M* :

D* : 100 to 300 (%)

H* : 80 to 160 (%)

80 to 240 (%)

PW = 100 µs

Duty Cycle = 1/10

VOUT

W* : 130 to 260 (%)

Q* : 100 to 200 (%)

50 Ω

RL = 100 Ω

N :

80 to 600 (%)

PS2501-1,-2,-4,PS2501L-1,-2,-4

TYPICAL CHARACTERISTICS (T^A= 25 °C, unless otherwise specified)

DIODE POWER DISSIPATION vs.

AMBIENT TEMPERATURE

TRANSISTOR POWER DISSIPATION

vs. AMBIENT TEMPERATURE

150

100

150

100

PS2501-1

PS2501L-1

PS2501-2

1.5 mW/˚C

PS2501L-2

1.5 mW/˚C

PS2501L-2

PS2501-4

PS2501L-4

PS2501-4

PS2501L-4

1.2 mW/˚C

100

Ambient Temperature T

125

(˚C)

150

100

125

(˚C)

150

Ambient Temperature T

COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE

FORWARD CURRENT vs.

FORWARD VOLTAGE

100

= +100 ˚C

+60 ˚C

+25 ˚C

0 ˚C

–25 ˚C

–55 ˚C

0.5

IF = 5 mA

0.1

0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5

Forward Voltage V (V)

Collector to Emitter Voltage VCE (V)

COLLECTOR TO EMITTER DARK

CURRENT vs. AMBIENT TEMPERATURE

COLLECTOR CURRENT vs.

COLLECTOR SATURATION VOLTAGE

10 000

1 000

100

CE = 80 V

40 V

24 V

10 V

5 V

= 1 mA

0.5

0.1

–50

–25

100

1.0

0.2

0.4

0.6

0.8

Ambient Temperature T (˚C)

Collector Saturation Voltage VCE(sat) (V)

PS2501-1,-2,-4,PS2501L-1,-2,-4

NORMALIZED CURRENT TRANSFER

RATIO vs. AMBIENT TEMPERATURE

CURRENT TRANSFER RATIO vs.

FORWARD CURRENT

1.2

450

400

350

300

250

1.0

0.8

0.6

0.4

0.2

200

150

100

Normalized to 1.0

at T = 25 ˚C,

= 5 mA, VCE = 5 V

–50

–25

100

0.05 0.1

0.5

Forward Current I

(mA)

Ambient Temperature T

(˚C)

SWITCHING TIME vs.

LOAD RESISTANCE

SWITCHING TIME vs.

LOAD RESISTANCE

1 000

100

= 2 mA,

I = 5 mA,

VCC = 5 V,

CTR = 290 %

CC = 10 V,

CTR = 290 %

0.1

100

10 k

5 k

50 100

500

1 k

(Ω)

500 1 k

5 k 10 k

(Ω)

50 k 100 k

Load Resistance R

FREQUENCY RESPONSE

LONG TERM CTR DEGRADATION

1.2

1.0

0.8

0.6

0.4

0.2

= 5 mA,

CE = 5 V

I = 5 mA (TYP.)

–5

= 25 ˚C

= 60 ˚C

–10

–15

–20

100 Ω

RL = 1 kΩ

300 Ω

10³

Time (Hr)

10²

10⁴

10⁵

0.5

10 20 50 100200 500

Frequency f (kHz)

Remark The graphs indicate nominal characteristics.

PS2501-1,-2,-4,PS2501L-1,-2,-4

TAPING SPECIFICATIONS (in millimeters)

Outline and Dimensions (Tape)

2.0±0.1

4.0±0.1

4.3±0.2

1.55±0.1

0.3

1.55±0.1

5.6±0.1

8.0±0.1

Tape Direction

PS2501L-1-E3

PS2501L-1-F3

PS2501L-1-E4

PS2501L-1-F4

Outline and Dimensions (Reel)

2.0±0.5

φ13.0±0.5

R 1.0

φ21.0±0.8

+2.0

16.4

–0.0

Packing: PS2501L-1-E3, E4 1 000 pcs/reel

PS2501L-1-F3, F4 2 000 pcs/reel

PS2501-1,-2,-4,PS2501L-1,-2,-4

Outline and Dimensions (Tape)

2.0±0.1

4.0±0.1

1.55±0.1

4.3±0.2

0.3

10.4±0.1

1.55±0.1

12.0±0.1

Tape Direction

PS2501L-2-E3

PS2501L-2-E4

Outline and Dimensions (Reel)

2.0±0.5

φ13.0±0.5

R 1.0

φ21.0±0.8

+2.0

16.4

–0.0

Packing: 1 000 pcs/reel

PS2501-1,-2,-4,PS2501L-1,-2,-4

RECOMMENDED SOLDERING CONDITIONS

(1) Infrared reflow soldering

• Peak reflow temperature

• Time of temperature higher than 210 °C

• Number of reflows

235 °C (package surface temperature)

30 seconds or less

Three

• Flux

Rosin flux containing small amount of chlorine (The flux with a

maximum chlorine content of 0.2 Wt % is recommended.)

Recommended Temperature Profile of Infrared Reflow

(heating)

to 10 s

235 ˚C (peak temperature)

210 ˚C

to 30 s

120 to 160 ˚C

60 to 90 s

(preheating)

Time (s)

Caution Avoid removing the residual flux with chlorine-based cleaning solvent after a reflow process.

Peak temperature 235 ˚C or below

(2) Dip soldering

• Temperature

260 °C or below (molten solder temperature)

• Time

10 seconds or less

• Number of times

• Flux

One

Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of

0.2 Wt % is recommended.)

PS2501-1,-2,-4,PS2501L-1,-2,-4

[MEMO]

PS2501-1,-2,-4,PS2501L-1,-2,-4

CAUTION

Within this device there exists GaAs (Gallium Arsenide) material which is a

harmful substance if ingested. Please do not under any circumstances break the

hermetic seal.

NEPOC is a trademark of NEC Corporation.

No part of this document may be copied or reproduced in any form or by any means without the prior written

consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this

document.

NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual

property rights of third parties by or arising from use of a device described herein or any other liability arising

from use of such device. No license, either express, implied or otherwise, is granted under any patents,

copyrights or other intellectual property rights of NEC Corporation or others.

While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,

the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or

property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety

measures in its design, such as redundancy, fire-containment, and anti-failure features.

NEC devices are classified into the following three quality grades:

"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on

a customer designated "quality assurance program" for a specific application. The recommended applications

of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each

device before using it in a particular application.

Standard: Computers, office equipment, communications equipment, test and measurement equipment,

audio and visual equipment, home electronic appliances, machine tools, personal electronic

equipment and industrial robots

Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed

for life support)

Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems or medical equipment for life support, etc.

The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.

If customers intend to use NEC devices for applications other than those specified for Standard quality grade,

they should contact an NEC sales representative in advance.

Anti-radioactive design is not implemented in this product.

M4 96. 5

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