1N6374
更新时间：2025-01-13 02:13:17
品牌：ONSEMI
描述：1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors
概述
规格参数
数据手册
替代型号1N6374 概述
1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors 1500瓦峰值功率Mosorb齐纳瞬态电压抑制器 TVS二极管 瞬态抑制器
1N6374 规格参数
| 是否Rohs认证： | 符合 | 生命周期： | Obsolete |
| 包装说明： | O-PALF-W2 | 针数： | 2 |
| Reach Compliance Code： | not_compliant | ECCN代码： | EAR99 |
| HTS代码： | 8541.10.00.50 | 风险等级： | 5.12 |
| 其他特性： | EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, LOW IMPEDANCE | 最小击穿电压： | 9.4 V |
| 外壳连接： | ISOLATED | 最大钳位电压： | 11.5 V |
| 配置： | SINGLE | 二极管元件材料： | SILICON |
| 二极管类型： | TRANS VOLTAGE SUPPRESSOR DIODE | JESD-30 代码： | O-PALF-W2 |
| JESD-609代码： | e3 | 最大非重复峰值反向功率耗散： | 1500 W |
| 元件数量： | 1 | 端子数量： | 2 |
| 封装主体材料： | PLASTIC/EPOXY | 封装形状： | ROUND |
| 封装形式： | LONG FORM | 峰值回流温度（摄氏度）： | 260 |
| 极性： | UNIDIRECTIONAL | 最大功率耗散： | 5 W |
| 认证状态： | Not Qualified | 最大重复峰值反向电压： | 8 V |
| 子类别： | Transient Suppressors | 表面贴装： | NO |
| 技术： | ZENER | 端子面层： | Tin (Sn) |
| 端子形式： | WIRE | 端子位置： | AXIAL |
| 处于峰值回流温度下的最长时间： | 40 | Base Number Matches： | 1 |
1N6374 数据手册
通过下载1N6374数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载1N6373 - 1N6381 Series
(ICTE-5 - ICTE-36,
MPTE-5 - MPTE-45)
1500 Watt Peak Power
Mosorb Zener Transient
Voltage Suppressors
http://onsemi.com
Unidirectional*
Cathode
Anode
Mosorb devices are designed to protect voltage sensitive
components from high voltage, high–energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. These devices are
ON Semiconductor’s exclusive, cost-effective, highly reliable
Surmetic axial leaded package and are ideally-suited for use in
communication systems, numerical controls, process controls,
medical equipment, business machines, power supplies and many
other industrial/consumer applications, to protect CMOS, MOS and
Bipolar integrated circuits.
AXIAL LEAD
CASE 41A
PLASTIC
L
MPTE
–xx
1N
63xx
YYWW
Specification Features:
• Working Peak Reverse Voltage Range – 5 V to 45 V
• Peak Power – 1500 Watts @ 1 ms
• ESD Rating of Class 3 (>16 KV) per Human Body Model
• Maximum Clamp Voltage @ Peak Pulse Current
• Low Leakage < 5 mA Above 10 V
L
ICTE
–xx
YYWW
L = Assembly Location
MPTE–xx = ON Device Code
ICTE–xx = ON Device Code
1N63xx = JEDEC Device Code
YY = Year
• Response Time is Typically < 1 ns
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
WW = Work Week
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
230°C, 1/16″ from the case for 10 seconds
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any
ORDERING INFORMATION
Device
Package
Shipping
500 Units/Box
MPTE–xx
Axial Lead
MAXIMUM RATINGS
MPTE–xxRL4
Axial Lead 1500/Tape & Reel
Rating
Symbol
Value
Unit
ICTE–xx
Axial Lead
500 Units/Box
Peak Power Dissipation (Note 1.)
P
PK
1500
Watts
@ T ≤ 25°C
L
ICTE–xxRL4
Axial Lead 1500/Tape & Reel
Steady State Power Dissipation
P
D
5.0
Watts
1N63xx
Axial Lead
500 Units/Box
@ T ≤ 75°C, Lead Length = 3/8″
L
Derated above T = 75°C
20
20
mW/°C
°C/W
L
1N63xxRL4*
Axial Lead 1500/Tape & Reel
Thermal Resistance, Junction–to–Lead
Forward Surge Current (Note 2.)
R
I
q
JL
NOTES:
200
Amps
1. Nonrepetitive current pulse per Figure 5 and der-
FSM
ated above T = 25°C per Figure 2.
@ T = 25°C
A
A
2. 1/2 sine wave (or equivalent square wave), PW =
8.3 ms, duty cycle = 4 pulses per minute maxi-
mum.
Operating and Storage
Temperature Range
T , T
– 65 to
+175
°C
J
stg
*Please see 1N6382 – 1N6389 (ICTE–10C – ICTE–36C, MPTE–8C – MPTE–45C)
for Bidirectional Devices
*1N6378 Not Available in 1500/Tape & Reel
Semiconductor Components Industries, LLC, 2002
1
Publication Order Number:
June, 2002 – Rev. 2
1N6373/D
1N6373 – 1N6381 Series (ICTE–5 – ICTE–36, MPTE–5 – MPTE–45)
ELECTRICAL CHARACTERISTICS (T = 25°C unless
I
A
otherwise noted, V = 3.5 V Max. @ I (Note 3.) = 100 A)
F
F
I
F
Symbol
Parameter
I
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
V
C
PP
V
C
V
V
V
Working Peak Reverse Voltage
BR RWM
RWM
V
I
V
F
R
T
I
R
Maximum Reverse Leakage Current @ V
I
RWM
V
Breakdown Voltage @ I
Test Current
BR
T
I
T
QV
Maximum Temperature Variation of V
I
PP
BR
BR
I
F
Forward Current
V
F
Forward Voltage @ I
F
Uni–Directional TVS
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, V = 3.5 V Max. @ I (Note 3.) = 100 A)
A
F
F
Breakdown Voltage
V
C
@ I (Note 6.)
V (Volts) (Note 6.)
C
PP
V
I @
R
RWM
JEDEC
Device
)
V
BR
(Note 5. (Volts)
@ I
V
C
I
PP
(Note 4.)
V
RWM
QV
T
BR
Device
@ I
=
@ I
=
PP
PP
(Volts)
(mA)
300
25
Min
Nom
Max
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
(Volts)
(A)
160
100
90
(mV/°C)
4.0
8.0
12
Marking
1 A
10 A
(ON Device)
1N6373
(MPTE–5)
1N6373
MPTE–5
5.0
8.0
10
12
15
18
22
36
45
6.0
–
–
–
–
–
–
–
–
–
–
9.4
7.1
7.5
1N6374
(MPTE–8)
1N6374
MPTE–8
9.4
–
15
11.3
13.7
16.1
20.1
24.2
29.8
50.6
63.3
11.5
14.1
16.5
20.6
25.2
32
1N6375
(MPTE–10)
1N6375
MPTE–10
2.0
2.0
2.0
2.0
2.0
2.0
2.0
11.7
14.1
17.6
21.2
25.9
42.4
52.9
–
16.7
21.2
25
1N6376
(MPTE–12)
1N6376
MPTE–12
–
70
14
1N6377
(MPTE–15)
1N6377
MPTE–15
–
60
18
1N6378*
(MPTE–18)
1N6378*
MPTE–18
–
30
50
21
1N6379
(MPTE–22)
1N6379
MPTE–22
–
37.5
65.2
78.9
40
26
1N6380
(MPTE–36)
1N6380
MPTE–36
–
23
54.3
70
50
1N6381
(MPTE–45)
1N6381
MPTE–45
–
19
60
ICTE–5
ICTE–10
ICTE–12
ICTE–5
ICTE–10
ICTE–12
5.0
10
12
300
2.0
2.0
6.0
11.7
14.1
–
–
–
–
–
–
1.0
1.0
1.0
9.4
16.7
21.2
160
90
70
7.1
13.7
16.1
7.5
14.1
16.5
4.0
8.0
12
ICTE–15
ICTE–18
ICTE–22
ICTE–36
ICTE–15
ICTE–18
ICTE–22
ICTE–36
15
18
22
36
2.0
2.0
2.0
2.0
17.6
21.2
25.9
42.4
–
–
–
–
–
–
–
–
1.0
1.0
1.0
1.0
25
30
37.5
65.2
60
50
40
23
20.1
24.2
29.8
50.6
20.6
25.2
32
14
18
21
26
54.3
NOTES:
3. Square waveform, PW = 8.3 ms, Non–repetitive duty cycle.
4. A transient suppressor is normally selected according to the maximum working peak reverse voltage (V
or greater than the dc or continuous peak operating voltage level.
), which should be equal to
RWM
5. V measured at pulse test current I at an ambient temperature of 25°C and minimum voltage in V is to be controlled.
BR
T
BR
6. Surge current waveform per Figure 5 and derate per Figures 1 and 2.
*Not Available in the 1500/Tape & Reel
http://onsemi.com
2
1N6373 – 1N6381 Series (ICTE–5 – ICTE–36, MPTE–5 – MPTE–45)
100
NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 5
100
80
60
10
40
20
0
1
0.1Ăms
1Ăms
10Ăms
100Ăms
1 ms
10 ms
0
25
50
75
100 125 150 175 200
T , AMBIENT TEMPERATURE (°C)
A
t , PULSE WIDTH
P
Figure 1. Pulse Rating Curve
Figure 2. Pulse Derating Curve
1N6373, ICTE-5, MPTE-5,
through
1N6389, ICTE-45, C, MPTE-45, C
10,000
1000
MEASURED @
ZERO BIAS
MEASURED @ V
RWM
100
10
1
10
100
1000
V
BR
, BREAKDOWN VOLTAGE (VOLTS)
Figure 3. Capacitance versus Breakdown Voltage
PULSE WIDTH (t ) IS DEFINED AS
P
THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50% OF I
t ≤ 10 ms
r
3/8″
.
PP
PEAK VALUE - I
PP
100
50
0
3/8″
5
4
3
I
PP
HALF VALUE -
2
2
t
P
1
0
0
1
2
t, TIME (ms)
3
4
0
25
50
75
100 125 150 175
200
T , LEAD TEMPERATURE (°C)
L
Figure 4. Steady State Power Derating
Figure 5. Pulse Waveform
http://onsemi.com
3
1N6373 – 1N6381 Series (ICTE–5 – ICTE–36, MPTE–5 – MPTE–45)
1N6373, ICTE-5, MPTE-5,
through
1.5KE6.8CA
through
1N6389, ICTE-45, C, MPTE-45, C
1.5KE200CA
1000
500
1000
500
V
Ă=Ă6.8 to 13ĂV
V
Ă=Ă6.0 to 11.7ĂV
BR(NOM)
BR(MIN)
T Ă=Ă25°C
P
T Ă=Ă25°C
L
t Ă=Ă10Ăms
P
L
t Ă=Ă10Ăms
19ĂV
21.2ĂV
20ĂV
24ĂV
43ĂV
75ĂV
42.4ĂV
200
100
50
200
100
50
20
20
180ĂV
120ĂV
10
5
10
5
2
1
2
1
0.3
0.5 0.7
1
2
3
5
7
10
20 30
(VOLTS)
0.3
0.5 0.7
1
2
3
5
7
10
20 30
DV , INSTANTANEOUS INCREASE IN V ABOVE V
BR
DV , INSTANTANEOUS INCREASE IN V ABOVE V (VOLTS)
BR(NOM)
BR
BR(NOM)
BR
BR
Figure 6. Dynamic Impedance
1
0.7
0.5
0.3
0.2
PULSE WIDTH
10 ms
0.1
0.07
0.05
1 ms
0.03
0.02
100 ms
10 ms
0.01
0.1
0.2
0.5
1
2
5
10
20
50 100
D, DUTY CYCLE (%)
Figure 7. Typical Derating Factor for Duty Cycle
http://onsemi.com
4
1N6373 – 1N6381 Series (ICTE–5 – ICTE–36, MPTE–5 – MPTE–45)
APPLICATION NOTES
RESPONSE TIME
circuit layout, minimum lead lengths and placing the
suppressor device as close as possible to the equipment or
components to be protected will minimize this overshoot.
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitance
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 8.
The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 9. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. These devices have
excellent response time, typically in the picosecond range
and negligible inductance. However, external inductive
effects could produce unacceptable overshoot. Proper
Some input impedance represented by Z is essential to
in
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
DUTY CYCLE DERATING
The data of Figure 1 applies for non-repetitive conditions
and at a lead temperature of 25°C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves
of Figure 7. Average power must be derated as the lead or
ambient temperature rises above 25°C. The average power
derating curve normally given on data sheets may be
normalized and used for this purpose.
At first glance the derating curves of Figure 7 appear to be
in error as the 10 ms pulse has a higher derating factor than
the 10 ms pulse. However, when the derating factor for a
given pulse of Figure 7 is multiplied by the peak power value
of Figure 1 for the same pulse, the results follow the
expected trend.
TYPICAL PROTECTION CIRCUIT
Z
in
LOAD
V
in
V
L
V (TRANSIENT)
in
OVERSHOOT DUE TO
INDUCTIVE EFFECTS
V
V
V (TRANSIENT)
in
V
L
V
L
V
in
t
d
t = TIME DELAY DUE TO CAPACITIVE EFFECT
D
t
t
Figure 8.
Figure 9.
http://onsemi.com
5
1N6373 – 1N6381 Series (ICTE–5 – ICTE–36, MPTE–5 – MPTE–45)
OUTLINE DIMENSIONS
Transient Voltage Suppressors – Axial Leaded
1500 Watt Mosorb
MOSORB
CASE 41A–04
ISSUE D
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
3. LEAD FINISH AND DIAMETER UNCONTROLLED
IN DIMENSION P.
4. 041A-01 THRU 041A-03 OBSOLETE, NEW
STANDARD 041A-04.
K
INCHES
DIM MIN MAX
MILLIMETERS
P
MIN
8.50
4.80
0.96
25.40
---
MAX
9.50
5.30
1.06
---
A
B
D
K
P
0.335
0.189
0.038
1.000
---
0.374
0.209
0.042
---
P
A
0.050
1.27
K
http://onsemi.com
6
1N6373 – 1N6381 Series (ICTE–5 – ICTE–36, MPTE–5 – MPTE–45)
Notes
http://onsemi.com
7
1N6373 – 1N6381 Series (ICTE–5 – ICTE–36, MPTE–5 – MPTE–45)
Mosorb and Surmetic are trademarks of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment:
JAPAN: ON Semiconductor, Japan Customer Focus Center
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Phone: 81–3–5740–2700
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada
Email: ONlit@hibbertco.com
Email: r14525@onsemi.com
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
N. American Technical Support: 800–282–9855 Toll Free USA/Canada
1N6373/D
1N6374 替代型号
| 型号 | 制造商 | 描述 | 替代类型 | 文档 |
| 1N6374RL4 | ONSEMI | 1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors | 功能相似 |
|
| 1.5KE10ARL4G | ONSEMI | 1500 Watt Mosorb TM Zener Transient Voltage Suppressors | 功能相似 |
|
1N6374 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| 1N6374-E3/100 | VISHAY | DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Suppressor | 获取价格 |
|
| 1N6374-E3/4 | VISHAY | DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, 1.5KE, 2 PIN, Transient Suppressor | 获取价格 |
|
| 1N6374-E3/51 | VISHAY | TVS DIODE 8V 11.5V 1.5KE | 获取价格 |
|
| 1N6374-E3/53 | VISHAY | DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Suppressor | 获取价格 |
|
| 1N6374-E3/54 | VISHAY | TVS DIODE 8V 11.5V 1.5KE | 获取价格 |
|
| 1N6374-E3/58 | VISHAY | DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Suppressor | 获取价格 |
|
| 1N6374-E3/60 | VISHAY | DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Suppressor | 获取价格 |
|
| 1N6374-E3/71 | VISHAY | DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Suppressor | 获取价格 |
|
| 1N6374-E3/73 | VISHAY | TVS DIODE 8V 11.5V 1.5KE | 获取价格 |
|
| 1N6374-E3/91 | VISHAY | DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Suppressor | 获取价格 |
|
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