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2N3903

更新时间：2025-06-28 02:07:05
品牌：ONSEMI
描述：General Purpose Transistors(NPN Silicon)

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2N3903 概述

General Purpose Transistors(NPN Silicon) 通用晶体管（ NPN硅） 双极性晶体管

2N3903 数据手册

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2N3903, 2N3904  
2N3903 is a Preferred Device  
General Purpose  
Transistors  
NPN Silicon  
http://onsemi.com  
COLLECTOR  
3
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
40  
Unit  
Vdc  
2
BASE  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
CEO  
V
CBO  
V
EBO  
60  
Vdc  
1
6.0  
Vdc  
EMITTER  
Collector Current – Continuous  
I
200  
mAdc  
C
STYLE 1  
Total Device Dissipation  
P
D
D
@ T = 25°C  
625  
5.0  
mW  
mW/°C  
A
Derate above 25°C  
TO–92  
Total Device Dissipation  
P
CASE 29  
STYLE 1  
@ T = 25°C  
1.5  
12  
Watts  
mW/°C  
C
1
2
Derate above 25°C  
3
Operating and Storage Junction  
Temperature Range  
T , T  
stg  
–55 to  
+150  
°C  
J
MARKING DIAGRAMS  
THERMAL CHARACTERISTICS (Note 1.)  
Characteristic Symbol  
Thermal Resistance,  
2N  
3903  
YWW  
2N  
3904  
YWW  
Max  
Unit  
R
R
200  
°C/W  
θJA  
Junction to Ambient  
Thermal Resistance,  
Junction to Case  
83.3  
°C/W  
θJC  
Y
WW  
= Year  
= Work Week  
1. Indicates Data in addition to JEDEC Requirements.  
ORDERING INFORMATION  
Device  
2N3903  
Package  
TO–92  
TO–92  
TO–92  
TO–92  
TO–92  
TO–92  
TO–92  
TO–92  
TO–92  
Shipping  
5000 Units/Box  
2N3903RLRM  
2N3904  
2000/Ammo Pack  
5000 Units/Box  
2N3904RLRA  
2N3904RLRE  
2N3904RLRM  
2N3904RLRP  
2N3904RL1  
2N3904ZL1  
2000/Tape & Reel  
2000/Tape & Reel  
2000/Ammo Pack  
2000/Ammo Pack  
2000/Tape & Reel  
2000/Ammo Pack  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
November, 2000 – Rev. 3  
2N3903/D  
2N3903, 2N3904  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage (Note 2.) (I = 1.0 mAdc, I = 0)  
V
V
40  
60  
6.0  
–
–
–
Vdc  
Vdc  
C
B
(BR)CEO  
Collector–Base Breakdown Voltage (I = 10 mAdc, I = 0)  
C
E
(BR)CBO  
Emitter–Base Breakdown Voltage (I = 10 mAdc, I = 0)  
V
(BR)EBO  
–
Vdc  
E
C
Base Cutoff Current (V  
CE  
= 30 Vdc, V  
= 3.0 Vdc)  
I
50  
50  
nAdc  
nAdc  
EB  
BL  
Collector Cutoff Current (V  
CE  
= 30 Vdc, V  
= 3.0 Vdc)  
I
–
EB  
CEX  
ON CHARACTERISTICS  
DC Current Gain (Note 2.)  
h
FE  
–
(I = 0.1 mAdc, V  
= 1.0 Vdc)  
2N3903  
2N3904  
2N3903  
2N3904  
2N3903  
2N3904  
2N3903  
2N3904  
2N3903  
2N3904  
20  
40  
35  
70  
50  
100  
30  
60  
15  
30  
–
–
–
C
CE  
CE  
CE  
CE  
(I = 1.0 mAdc, V  
C
= 1.0 Vdc)  
= 1.0 Vdc)  
= 1.0 Vdc)  
–
(I = 10 mAdc, V  
C
150  
300  
–
–
–
(I = 50 mAdc, V  
C
(I = 100 mAdc, V  
C CE  
= 1.0 Vdc)  
–
Collector–Emitter Saturation Voltage (Note 2.)  
(I = 10 mAdc, I = 1.0 mAdc)  
V
Vdc  
Vdc  
CE(sat)  
–
–
0.2  
0.3  
C
B
(I = 50 mAdc, I = 5.0 mAdc  
C
B
Base–Emitter Saturation Voltage (Note 2.)  
(I = 10 mAdc, I = 1.0 mAdc)  
V
BE(sat)  
0.65  
–
0.85  
0.95  
C
C
B
B
(I = 50 mAdc, I = 5.0 mAdc)  
SMALL–SIGNAL CHARACTERISTICS  
Current–Gain – Bandwidth Product  
f
T
MHz  
(I = 10 mAdc, V  
= 20 Vdc, f = 100 MHz)  
2N3903  
2N3904  
250  
300  
–
–
C
CE  
Output Capacitance (V  
= 5.0 Vdc, I = 0, f = 1.0 MHz)  
C
obo  
–
–
4.0  
8.0  
pF  
pF  
CB  
E
Input Capacitance (V  
Input Impedance  
= 0.5 Vdc, I = 0, f = 1.0 MHz)  
C
EB  
C
ibo  
h
k Ω  
ie  
re  
fe  
(I = 1.0 mAdc, V  
= 10 Vdc, f = 1.0 kHz)  
= 10 Vdc, f = 1.0 kHz)  
CE  
2N3903  
2N3904  
1.0  
1.0  
8.0  
10  
C
CE  
–4  
Voltage Feedback Ratio  
(I = 1.0 mAdc, V  
h
h
X 10  
–
2N3903  
2N3904  
0.1  
0.5  
5.0  
8.0  
C
Small–Signal Current Gain  
(I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz)  
2N3903  
2N3904  
50  
100  
200  
400  
C
CE  
Output Admittance (I = 1.0 mAdc, V  
C
= 10 Vdc, f = 1.0 kHz)  
h
oe  
1.0  
40  
mmhos  
CE  
Noise Figure  
NF  
dB  
(I = 100 mAdc, V  
C CE  
= 5.0 Vdc, R = 1.0 k Ω, f = 1.0 kHz)  
2N3903  
2N3904  
–
–
6.0  
5.0  
S
SWITCHING CHARACTERISTICS  
Delay Time  
t
t
–
–
35  
35  
ns  
ns  
ns  
d
(V  
I
= 3.0 Vdc, V  
= 0.5 Vdc,  
BE  
CC  
= 10 mAdc, I = 1.0 mAdc)  
C
B1  
Rise Time  
t
r
Storage Time  
(V  
I
= 3.0 Vdc, I = 10 mAdc,  
2N3903  
2N3904  
–
–
175  
200  
CC  
C
s
= I = 1.0 mAdc)  
B1 B2  
Fall Time  
t
f
–
50  
ns  
2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2%.  
http://onsemi.com  
2
2N3903, 2N3904  
+3 V  
+3 V  
DUTY CYCLE = 2%  
300 ns  
t
1
10 < t < 500 ms  
1
+10.9 V  
DUTY CYCLE = 2%  
+10.9 V  
< 1 ns  
275  
C
275  
C
10 k  
10 k  
0
-ā0.5 V  
< 4 pF*  
< 4 pF*  
S
S
1N916  
-ā9.1 V′  
< 1 ns  
* Total shunt capacitance of test jig and connectors  
Figure 1. Delay and Rise Time  
Equivalent Test Circuit  
Figure 2. Storage and Fall Time  
Equivalent Test Circuit  
TYPICAL TRANSIENT CHARACTERISTICS  
T
T
= 25°C  
= 125°C  
J
J
10  
5000  
V
= 40 V  
CC  
I /I = 10  
3000  
2000  
7.0  
C B  
5.0  
1000  
700  
C
ibo  
500  
3.0  
2.0  
Q
T
300  
200  
C
obo  
Q
A
100  
70  
1.0  
0.1  
50  
0.2 0.3 0.5 0.7 1.0  
2.0 3.0 5.0 7.0 10  
20 30 40  
1.0  
2.0 3.0 5.0 7.0 10  
20 30 50 70 100  
200  
REVERSE BIAS VOLTAGE (VOLTS)  
I , COLLECTOR CURRENT (mA)  
C
Figure 3. Capacitance  
Figure 4. Charge Data  
http://onsemi.com  
3
2N3903, 2N3904  
500  
500  
I /I = 10  
C B  
V
= 40 V  
CC  
I /I = 10  
300  
200  
300  
200  
C B  
100  
70  
100  
70  
t @ V = 3.0 V  
r CC  
50  
50  
30  
20  
30  
20  
40 V  
15 V  
10  
10  
2.0 V  
7
5
7
5
t
d
@ V = 0 V  
OB  
1.0  
2.0 3.0 5.0 7.0 10  
20 30 50 70 100  
200  
1.0  
2.0 3.0 5.0 7.0 10  
20 30 50 70 100  
200  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 5. Turn–On Time  
Figure 6. Rise Time  
500  
500  
1
/ t  
8 f  
t′ = t -  
I
s
s
= I  
V
I
= 40 V  
CC  
300  
200  
300  
200  
B1 B2  
= I  
B1 B2  
I /I = 20  
C B  
I /I = 10  
C B  
I /I = 20  
C B  
100  
70  
100  
70  
I /I = 20  
C B  
50  
50  
I /I = 10  
C B  
I /I = 10  
C B  
30  
20  
30  
20  
10  
10  
7
5
7
5
1.0  
2.0 3.0 5.0 7.0 10  
20 30 50 70 100  
200  
1.0  
2.0 3.0 5.0 7.0 10  
20 30 50 70 100  
200  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 7. Storage Time  
Figure 8. Fall Time  
TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS  
NOISE FIGURE VARIATIONS  
(V  
= 5.0 Vdc, T = 25°C, Bandwidth = 1.0 Hz)  
CE  
A
12  
10  
8
14  
SOURCE RESISTANCE = 200 W  
= 1.0 mA  
f = 1.0 kHz  
I
C
= 1.0 mA  
I
C
12  
I
C
= 0.5 mA  
10  
8
SOURCE RESISTANCE = 200 W  
= 0.5 mA  
I
C
= 50 mA  
I
C
6
4
I
C
= 100 mA  
SOURCE RESISTANCE = 1.0 k  
= 50 mA  
6
4
2
0
I
C
2
0
SOURCE RESISTANCE = 500 W  
= 100 mA  
I
C
0.1 0.2  
0.4  
1.0 2.0 4.0  
10  
20  
40  
100  
0.1 0.2  
0.4  
1.0 2.0  
4.0  
10  
20  
40  
100  
f, FREQUENCY (kHz)  
R , SOURCE RESISTANCE (k OHMS)  
S
Figure 9.  
Figure 10.  
http://onsemi.com  
4
2N3903, 2N3904  
h PARAMETERS  
(V  
= 10 Vdc, f = 1.0 kHz, T = 25°C)  
CE  
A
300  
200  
100  
50  
20  
10  
5
100  
70  
50  
30  
2
1
0.1  
0.2 0.3  
0.5  
1.0  
2.0 3.0  
5.0  
10  
0.1  
0.2 0.3  
0.5  
1.0  
2.0 3.0  
5.0  
10  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 11. Current Gain  
Figure 12. Output Admittance  
20  
10  
10  
7.0  
5.0  
5.0  
2.0  
3.0  
2.0  
1.0  
0.5  
1.0  
0.7  
0.5  
0.2  
0.1  
0.2 0.3  
0.5  
1.0  
2.0 3.0  
5.0  
10  
0.1  
0.2 0.3  
0.5  
1.0  
2.0 3.0  
5.0  
10  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 13. Input Impedance  
Figure 14. Voltage Feedback Ratio  
http://onsemi.com  
5
2N3903, 2N3904  
TYPICAL STATIC CHARACTERISTICS  
2.0  
1.0  
T
= +125°C  
J
V
CE  
= 1.0 V  
+25°C  
0.7  
0.5  
-ā55°C  
0.3  
0.2  
0.1  
0.1  
0.2  
0.3  
0.5 0.7  
1.0  
2.0  
3.0  
5.0 7.0 10  
20  
30  
50  
70 100  
200  
I , COLLECTOR CURRENT (mA)  
C
Figure 15. DC Current Gain  
1.0  
0.8  
0.6  
0.4  
T
= 25°C  
J
I
C
= 1.0 mA  
10 mA  
30 mA  
100 mA  
0.2  
0
0.01  
0.02  
0.03  
0.05 0.07 0.1  
0.2  
0.3  
0.5  
0.7  
1.0  
2.0  
3.0  
5.0  
7.0  
10  
I , BASE CURRENT (mA)  
B
Figure 16. Collector Saturation Region  
1.2  
1.0  
0.8  
1.0  
T
= 25°C  
J
V
@ I /I =10  
C B  
BE(sat)  
+25°C TO +125°C  
-ā55°C TO +25°C  
0.5  
0
q
FOR V  
CE(sat)  
VC  
V
BE  
@ V =1.0 V  
CE  
0.6  
0.4  
-ā0.5  
-ā1.0  
-ā55°C TO +25°C  
+25°C TO +125°C  
V
@ I /I =10  
C B  
CE(sat)  
q
FOR V  
BE(sat)  
VB  
0.2  
0
-ā1.5  
-ā2.0  
1.0  
2.0  
5.0  
10  
20  
50  
100  
200  
0
20  
40  
60  
80 100 120 140 160 180 200  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 17. “ON” Voltages  
Figure 18. Temperature Coefficients  
http://onsemi.com  
6
2N3903, 2N3904  
PACKAGE DIMENSIONS  
TO–92  
TO–226AA  
CASE 29–11  
ISSUE AL  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
A
B
2. CONTROLLING DIMENSION: INCH.  
3. CONTOUR OF PACKAGE BEYOND DIMENSION R  
IS UNCONTROLLED.  
4. LEAD DIMENSION IS UNCONTROLLED IN P AND  
BEYOND DIMENSION K MINIMUM.  
R
P
L
INCHES  
DIM MIN MAX  
MILLIMETERS  
SEATING  
PLANE  
K
MIN  
4.45  
4.32  
3.18  
0.407  
1.15  
2.42  
0.39  
12.70  
6.35  
2.04  
---  
MAX  
5.20  
5.33  
4.19  
0.533  
1.39  
2.66  
0.50  
---  
A
B
C
D
G
H
J
0.175  
0.170  
0.125  
0.016  
0.045  
0.095  
0.015  
0.500  
0.250  
0.080  
---  
0.205  
0.210  
0.165  
0.021  
0.055  
0.105  
0.020  
---  
D
X X  
G
J
H
V
K
L
---  
---  
C
N
P
R
V
0.105  
0.100  
---  
2.66  
2.54  
---  
SECTION X–X  
0.115  
0.135  
2.93  
3.43  
1
N
---  
---  
N
STYLE 1:  
PIN 1. EMITTER  
2. BASE  
STYLE 14:  
PIN 1. EMITTER  
2. COLLECTOR  
3. BASE  
3. COLLECTOR  
http://onsemi.com  
7
2N3903, 2N3904  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes  
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular  
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,  
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be  
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.  
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or  
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold  
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable  
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim  
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.  
PUBLICATION ORDERING INFORMATION  
Literature Fulfillment:  
JAPAN: ON Semiconductor, Japan Customer Focus Center  
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031  
Phone: 81–3–5740–2700  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada  
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada  
Email: ONlit@hibbertco.com  
Email: r14525@onsemi.com  
ON Semiconductor Website: http://onsemi.com  
For additional information, please contact your local  
Sales Representative.  
N. American Technical Support: 800–282–9855 Toll Free USA/Canada  
2N3903/D  

2N3903 替代型号

型号 制造商 描述 替代类型 文档
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