NGTB25P60UBT4G中文资料_数据手册_规格书

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AND9068/D

Reading ON Semiconductor

IGBT Datasheets

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APPLICATION NOTE

Abstract

Table 1. ABSOLUTE MAXIMUM RATINGS

The Insulated Gate Bipolar Transistor is a power switch

well suited for high power applications such as motor

control, UPS and solar inverters, and induction heating. If

the application requirements are well understood, the

correct IGBT can easily be selected from the electrical

properties provided in the manufacturers’ datasheet. This

application note describes the electrical parameters

provided in the ON Semiconductor IGBT datasheet.

Rating

Symbol

Value

Unit

V

Collector−emitter voltage

V

CES

600

Collector current

@ TC = 25°C

@ TC = 100°C

I_C

A

30

15

Pulsed collector current,

I

60

A

CM

T

pulse

limited by T

Jmax

Diode forward current

@ TC = 25°C

@ TC = 100°C

I

F

30

15

Part Number

The part numbering convention for ON Semiconductor

IGBTs is shown in Figure 1. Many of the device ratings and

details are described in the part number and can be

understood using this code.

Diode pulsed current, T

I

60

A

pulse

FM

limited by T

Jmax

Gate−emitter voltage

V

GE

$20

V

Power dissipation

@ TC = 25°C

@ TC = 100°C

P

D

W

130

55

Short circuit withstand time

= 15 V, V = 400 V, T

J

t

10

ms

SC

V

GE

CE

v +150°C

Operating junction temperat-

ure range

T

−55 to

°C

J

+150

Storage temperature range

T

stg

−55 to

+150

Lead temperature for solder-

ing, 1/8” from case for

5 seconds

T

SLD

260

Stresses exceeding Maximum Ratings may damage the device.

Maximum Ratings are stress ratings only. Functional operation

above the Recommended Operating Conditions is not implied.

Extended exposure to stresses above the Recommended Oper-

ating Conditions may affect device reliability.

Figure 1. ON Semiconductor IGBT Part Numbering

Key

Absolute Maximum Ratings

The absolute maximum ratings shown in Table 1 are

typical for an IGBT. This table sets the limits, both electrical

Brief

This section provides a description of the device and lists

its key features and typical applications.

1

Publication Order Number:

January, 2012 − Rev. 0

AND9068/D

T_J* T_C

and thermal, beyond which the functionality is no longer

I_F+

guaranteed and at which physical damage may occur. The

absolute maximum rating does not guarantee that the device

will meet the data sheet specifications when it is within that

range. The specific voltage, temperature, current and other

limitations are called out in the Electrical Characteristics

table.

R

_{th(j−c)(diode)}@ V_F

The equation relating I and V to the temperature rise is

F

the same, although the R

for the diode is specified

th(j−c)

separately.

Diode Pulsed Current, I_FM

The pulsed diode current describes the peak diode current

pulse above the rated collector current specification that can

flow while the junction remains below its maximum

temperature. The maximum allowable pulsed current in turn

depends on the pulse width, duty cycle and thermal

conditions of the device.

Collector−Emitter Voltage, V_CES

The maximum rated voltage to be applied between the

collector and emitter terminals of the device is specified to

prevent the device from entering avalanche breakdown and

dissipating excessive energy in the device. The avalanche

breakdown voltage varies with temperature and is at its

minimum at low temperature. The breakdown voltage of the

device is designed to meet the minimum voltage rating at

−40°C.

Gate−Emitter Voltage, V_GE

The gate−emitter voltage, V

describes maximum

GE

voltage to be applied from gate to emitter under fault

conditions. The gate−emitter voltage is limited by the gate

oxide material properties and thickness. The oxide is

typically capable of withstanding greater than 80V before

the oxide ruptures, but to ensure reliability over the lifetime

of the device, and to allow for transient overvoltage

conditions in the application, this voltage is limited to well

below the gate rupture voltage.

Collector Current, I_C

The maximum collector current is defined as the amount

of current that is allowed to flow continuously into the

collector for a given case temperature, T , in order to reach

the maximum allowable junction temperature, T (150°C).

C

J

The collector current can be stated in the following equation

form:

T_J* T_C

Power Dissipation, P_D

The maximum power dissipation is determined using the

following equation:

I_C

+

R

_{th(j−c)(IGBT)}@ V_CE(sat)

where R

CE(sat)

is the thermal resistance of the package and

is the on−state voltage at the specified current, I .

Since it is the current being sought after, and V

th(j−c)

T_J* T_C

+

V

C

is a

P_D

R_th(j−c)

CE(sat)

function of current, the equation must be solved iteratively.

An estimate of the V for a given collector current and

temperature can found in the typical datasheet curves,

discussed later.

It is very important to understand that the absolute

maximum collector current is defined based on very specific

electrical and thermal conditions. The capability of the

IGBT to conduct current without exceeding the absolute

maximum junction temperature is highly dependent on the

thermal performance of the system, including heatsinks and

airflow.

where R

is the thermal resistance of the package. The

th(j−c)

CE(sat)

maximum power dissipation is given at case temperatures of

25°C and 100°C, where the maximum junction temperature

is 150°C.

Short Circuit Withstand Time, t_sc

The short circuit withstand time describes the ability of

the device to carry high current and sustain high voltage at

the same time. The device must withstand at least the rated

short circuit withstand time with specified voltages applied

from collector to emitter and from gate to emitter. The

collector−emitter voltage specified for the test will vary

based on the minimum blocking voltage capability of the

device. The gate−emitter voltage is usually 15 V. The current

flowing through the device under these conditions can far

exceed the rated current, and is limited by the IGBT forward

transconductance, an electrical parameter described below.

The failure mode during this fault condition is usually

thermal in nature.

Pulsed Collector Current, I_CM

The pulsed collector current describes the peak collector

current pulse above the rated collector current specification

that can flow while remaining below the maximum junction

temperature. The maximum allowable pulsed current in turn

depends on the pulse width, duty cycle and thermal

conditions of the device.

Diode Forward Current, I_F

The diode forward current is the maximum continuous

current that can flow at a fixed case temperature, T , while

remaining under the maximum junction temperature, T .

Operating Junction Temperature Range, T_J

This is the junction temperature range in which the device

is guaranteed to operate without physical or electrical

damage or reduced life expectancy.

C

J

This is determined in similar fashion to the V

, above.

CE(sat)

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Storage Temperature Range, T_stg

die attach regions of the device. The maximum lead

temperature is also dependent on the duration for which the

soldering iron is applied to the lead. The maximum time for

application of the heat is specified in the conditions of this

rating.

This is the temperature range in which the device may be

stored, without electrical bias, without reducing the life

expectancy of the device.

Lead Temperature for Soldering, T_SLD

The maximum allowable soldering temperature is limited

by the thermal conduction from the leads to the junction and

THERMAL CHARACTERISTICS

Table 2. TABLE OF IGBT AND DIODE THERMAL CHARACTERISTICS

Rating

Symbol

Value

1.1

Unit

°C/W

Thermal resistance junction to case, for IGBT

Thermal resistance junction to case, for Diode

Thermal resistance junction to ambient

R

th(j-c)

R

2.4

th(j-c)

R

60

th(j-a)

Thermal Resistance Junction−to−Case, R_th(j−c)

resistance is derated for a square power pulse for reference

in designing pulse width modulated applications and is

described in the graph of thermal resistance for varying

pulse width and duty ratio, shown in Figure 2, below.

The value for the thermal resistance given in Table 2

represents the steady−state thermal resistance under dc

power conditions, applied to the IGBT. The thermal

10

1

DUTY CYCLE = 0.5

0.2

0.1

0.05

0.02

0.1

0.01

SINGLE PULSE

Duty Factor = t /t

1

2

Peak T = P

x Z

+ T

JC C

q

J

DM

0.001

0.000001

0.00001

0.0001

0.001

0.01

0.1

1

10

100

1000

PULSE TIME (s)

Figure 2. IGBT Transient Thermal Response Curve for Varying Duty Ratio

For a copackaged device such as the NGTB15N60EG the

thermal resistance from the junction to case is specified

separately for the IGBT and the diode.

Electrical Characteristics

Static Characteristics

The static, or dc, electrical characteristics are shown in

Table 3.

Thermal Resistance Junction−to−Ambient, R_th(j−a)

This is the entire thermal resistance from the silicon

junction−to−ambient.

Table 3. IGBT STATIC ELECTRICAL CHARACTERISTICS

Parameter

Test Conditions

Symbol

Min

Typ

Max

Unit

STATIC CHARACTERISTIC

Collector−emitter breakdown voltage,

gate−emitter short−circuited

V

= 0 V, I = 500 mA

V

(BR)CES

600

−

V

GE

C

Collector−emitter saturation voltage

V

= 15 V , I = 15 A

V

−

1.7

2.1

1.95

2.4

GE

C

CEsat

V

GE

= 15 V , I = 15 A, T = 150°C

C J

Gate−emitter threshold voltage

V

GE

= V , I = 250 mA

4.5

6.5

CE

C

GE(th)

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AND9068/D

Table 3. IGBT STATIC ELECTRICAL CHARACTERISTICS

Parameter

Test Conditions

Symbol

Min

Typ

Max

Unit

STATIC CHARACTERISTIC

Collector−emitter cut−off current, gate−emitter

short−circuited

V

= 0 V, V = 600 V

I

−

10

−

mA

nA

S

GE

CE

CES

V

GE

= 0 V, V = 600 V, T = 150°C

−

200

CE

J

Gate leakage current, collector−emitter

short−circuited

V

= 20 V, V = 0 V

I

−

100

GE

CE

GES

Forward Transconductance

V

= 20 V, I = 15 A

g

fs

−

10.1

−

CE

C

Collector−Emitter Breakdown Voltage, V_(BR)CES

V . This chart shows the I dependence on V for

CE(sat) C CE

This is the minimum off−state forward blocking voltage

guaranteed over the operating temperature range. It is

specified with the gate terminal tied to the emitter with a

specified collector current large enough to place the device

into avalanche.

various gate−emitter voltages. The datasheet contains

output characteristics for T = −40, 25, and 150°C.

A

60

T = −40°C

A

50

40

30

20

10

0

Collector−Emitter Saturation Voltage, V_CE(sat)

13 V

V

= 17 V

GE

V

CE(sat)

is an important figure of merit, since it is directly

related to the conduction losses of the device. This is the

voltage drop from collector to emitter for a specified gate

voltage and collector current. Both a typical value and a

maximum value are specified in the electrical table for both

25°C and 150°C.

15 V

11 V

In addition to the electrical limits in the table, the

datasheet includes a graph describing the dependence of

9 V

7 V

V

CE(sat)

on temperature, as shown in Figure 3. The graph

0

1

2

3

4

5

6

7

8

9

describes the typical part and does not guarantee

performance, but it can be used as a starting point to

V

, COLLECTOR−TO−EMITTER VOLTAGE (V)

CE

Figure 4. Graph of the Output Characteristics of the

determine the V

for a given temperature. The curves

CE(sat)

IGBT at 255C

are given for V = 15 V and various collector currents.

GE

The characteristic curves and typical relationships should

never be substituted for worst case design values. Good

design practices and board−level design evaluation are

critical for a reliable system.

3.5

3

I

= 30 A

C

Gate−Emitter Threshold Voltage, V_GE(th)

2.5

2

This parameter describes the gate to emitter voltage

required for a specified amount of collector current to flow.

This defines the gate to emitter voltage at which the device

enters the on−state. Typically this test is based on a collector

current flow proportional to the die size.

I

C

= 15 A

1.5

1

I

C

= 5 A

I

C

= 10 A

Collector−Emitter Cut−off−Current, I_CES

This specifies the leakage current one can expect in the

off−state forward blocking mode. It is specified at the

0.5

0

−60 −40 −20

0

20 40 60 80 100 120 140160

maximum rated blocking voltage,

V

CES

with the

T , JUNCTION TEMPERATURE (°C)

J

gate−to−emittervoltage equal to zero volts. The maximum

allowable value of leakage current occurs at the maximum

junction temperature.

Figure 3. Graph of the Temperature Dependence of

V_CE(sat)

The V

values in the electrical parameter table are

Gate Leakage Current, I_GES

CE(sat)

only given for V = 15 V. If the gate of the IGBT is being

driven by a different voltage, the output characteristics

shown in Figure 4 can also be useful in approximating the

The absolute maximum value of gate leakage current is

typically specified at a gate voltage of 20 V while the

collector and emitter are grounded.

GE

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AND9068/D

Forward Transconductance, g_fs

This is the amount of change in collector current for an

incremental change in the gate to emitter voltage, measured

in Siemens (or Mhos). It is specified at the room temperature

rated current of the device, and typically with the device in

full saturation, where a further increase in collector−emitter

voltage no longer leads to an additional increase in collector

current. A typical collector−emitter voltage used for this test

is 20 V. Figure 5 illustrates the g measurement.

fs

Figure 5. Illustration of the Measurement of IGBT g_fs

Dynamic Characteristics

Table 4. IGBT Dynamic Electrical Characteristics

Parameter

Test Conditions

Symbol

Min

Typ

Max

Unit

pF

DYNAMIC CHARACTERISTIC

Input capacitance

C

−

2600

64

−

ies

Output capacitance

C

V

CE

= 20 V, V = 0 V, f = 1 MHz

oes

GE

Reverse transfer capacitance

Gate charge total

C

42

res

Q

80

g

Gate to emitter charge

Gate to collector charge

Q

24

V

CE

= 480 V, I = 15 A, V = 15 V

nC

ge

C

GE

Q

33

gc

10000

The dynamic electrical characteristics which include

device capacitances and gate charge are given in the

electrical table, as shown in Table 4.

V

= 0 V,

GE

f = 1 MHz

C

ies

IGBT capacitances are similar to those described for

power MOSFETs. The datasheet describes the measurable

1000

100

terminal capacitances, C , C , and C . They are

ies

oes

res

specified in the electrical table at a fixed collector bias

voltage; however, the capacitances are voltage dependant,

as can be seen in Figure 6. The capacitances specified on the

datasheet are convenient and easily measured. They relate to

the pin to pin capacitances shown in Figure 7 and described

below.

C

oes

C

res

10

0

10 20

30

40 50 60

70 80 90 100

V

CE

, COLLECTOR−TO−EMITTER VOLTAGE (V)

Figure 6. IGBT Capacitance versus Collector−Emitter

Voltage Showing Voltage Dependance of C_oesand

C_res

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AND9068/D

Q is the total charge required on the gate to raise V to

g

GE

a specified gate voltage. ON Semiconductor devices are

specified at V _=_15_V.

GE

Figure 7. Pin−to−pin Capacitances of the IGBT

C_ies+ C_ge) C_gcwith C_ceshorted

C

_oes+ C_gc) C_ce

_res+ C_gc

Input Capacitance, C_ies

Figure 8. Theoretical Gate Charge Curve showing

The input capacitance is made up of the parallel

combination of gate−emitter and gate−collector

capacitances, when the collector and emitter are tied

together. The gate−emitter capacitance is constant, as it

consists mainly of the metal−oxide−semiconductor

V

_GP, Q_G, Q_GE, and Q_GC

Gate to Emitter Charge, Q_ge

is the amount of charge required to reach the plateau

voltage V . This charge contributes to turning on the MOS

channel, at which time the collector−emitter voltage begins

to transition from high to low voltage. The level of V is

dependent on the load current being switched and can be

approximated by determining the V that corresponds to

Q

ge

capacitance. The gate−collector capacitance is

a

GP

combination of a fixed oxide capacitor and a p−n junction

capacitor. This results in a voltage dependence that is

slightly more complex than that of a p−n junction.

GP

GS

Output Capacitance, C_oes

the switching current level from the transconductance

curves in Figure 5.

The output capacitance is formed by the parallel

combination of the gate−collector and collector−emitter

capacitances. As mentioned above, the gate−collector

capacitance is voltage dependant. This is also true for the

collector−emitter capacitance. The voltage dependence of

the collector−emitter junction is that of a p−n junction.

Gate to Collector Charge, Q_gc

Q

gc

is the amount of charge required to charge the junction

capacitor while the voltage from collector to emitter is

decreasing in the transition between the off−state and

on−state. This plateau corresponds to the charging of what

is also known as the Miller capacitance.

Transfer Capacitance, C_res

The transfer capacitance is composed only of the

gate−collector capacitance. Its role in the device operation

is critical, as it provides negative feedback between the

collector and the gate. This capacitance is responsible for the

plateau on the gate charge curve. The change in

Switching Characteristics

The IGBT switching characteristics are of great

importance because they relate directly to the switching

energy losses of the device. Switching losses can be

substantial, especially at higher frequencies and increasing

temperature, where the switching losses increase.

When voltage is applied to the gate, the input capacitance

collector−emitter voltage forces a current through C

res

which reduces the gate drive current while the collector

voltage is changing.

must first be charged to the threshold voltage, V

. This

GE(th)

Gate Charge, Total, Q_g

leads to a delay (t ) before the IGBT collector current

d(on)

Input capacitance is useful, but in terms of gate drive

design, the more important figure of merit is the gate charge.

It is used to size the gate drive components and predict

switching losses in the driver. To measure gate charge the

IGBT gate is driven with a current and the gate voltage

change is monitored versus time. The resulting gate voltage

versus gate charge curve is shown in Figure 8 for a constant

current gate drive signal.

begins to flow. Once the collector current begins to flow, the

depletion layer that blocks the voltage during the off−state

begins to collapse. The voltage drops to the on−state voltage

drop, V . This is illustrated in Figure 9.

CE(sat)

During turn−off, the gate voltage is reduced to zero and

the opposite occurs. The channel for the MOSFET current

is closed and the current begins to drop abruptly. The voltage

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AND9068/D

begins to rise from V

as the charge due to current flow

The switching characteristics are given in the electrical

CE(sat)

is removed. The voltage across the device reaches the supply

voltage, and minority carriers that remain in the device after

turn−off cause a tail current that continues to flow. This is

illustrated in Figure 10.

parametric table for T = 25 and 150°C. These are shown in

J

Table 5.

Table 5. INDUCTIVE SWITCHING ELECTRICAL CHARACTERISTICS OF THE IGBT

Parameter

SWITCHING CHARACTERISTIC , INDUCTIVE LOAD

Turn−on delay time

Rise time

Test Conditions

Symbol

Min

Typ

Max

Unit

ns

t

78

30

d(on)

t

r

Turn−off delay time

Fall time

t

130

d(off)

T = 25°C

J

V

= 400 V, I = 15 A

C

CC

t

f

120

R = 22 W

g

V

= 0 V / 15 V

Turn−on switching loss

Turn−off switching loss

Total switching loss

Turn−on delay time

Rise time

E

on

0.900

0.300

1.200

76

GE

E

off

mJ

ns

E

ts

t

d(on)

t

r

33

Turn−off delay time

Fall time

133

d(off)

T = 150°C

J

V

= 400 V, I = 15 A

CC

C

t

f

223

R = 22 W

g

V

= 0 V / 15 V

Turn−on switching loss

Turn−off switching loss

Total switching loss

E

on

1.10

0.510

1.610

GE

E

off

mJ

E

ts

voltage and collector current reach 10% of their final

specified value.

Rise Time, t_r

The interval between the time the collector reaches 10%

of its specified current value and the time it reaches 90% of

its final value is defined as the rise time.

Turn−on Switching Loss, E_on

The turn−on switching losses are calculated by integrating

the power dissipation (I x V ) over the time interval

C

CE

starting when the collector current reaches 10% of its final

value and ending when the collector−emitter voltage reaches

5% of its peak value.

Turn−off Delay Time, t_d(off)

t

is the time delay between the falling edge of the gate

d(off)

pulse and the falling edge of the collector current. The

measurement is the time between the point at which the gate

voltage falls to 90% of its maximum value and the collector

current reaches 10% of its final specified value.

Figure 9. Turn−on Switching Illustration Showing the

Definitions of the Turn−on Switching Characteristics

Fall Time, t_f

The fall time is defined as the time required for the

collector current to drop from 90% to 10% of its initial value.

Turn−on Delay Time, t_d(on)

Turn−off Switching Loss, E_off

t

is the time delay between the rising edge of the gate

d(on)

The turn−off switching energy losses are calculated to

include the overlap of the rising collector−emitter voltage

pulse and the rising edge of the IGBT collector current. The

measurement considers the point at which both the gate

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AND9068/D

Total Switching Loss, E_ts

The total switching losses comprise the sum of the

turn−on and turn−off switching losses.

Typical switching time and switching energy loss graphs

are given that describe the dependence of the switching

characteristics on a variety of system variables. The

dependence on junction temperature, collector current,

collector−emitter voltage, and gate resistance are all

provided to aid in the design process.

and the falling collector current. Because the IGBT is a

minority carrier device, the collector current continues to

flow after the time where the collector voltage has fully

risen. This residual current, called tail current, eventually

decays to zero. It is customary to add a fixed length of time

to the end of the turn−off time to capture the energy lost

during the entire tail current. This added time is denoted as

xms in Figure 10.

Diode Characteristics

Figure 11. Copackaged IGBT and Freewheeling

Diode

IGBTs are frequently used in applications where the load

is inductive, such as motor control. These applications are

hard switching and require that the IGBT be in parallel with

a

freewheeling diode. ON Semiconductor offers

copackaged IGBT and diode devices. The diode cathode and

IGBT collector are connected together and the diode anode

and IGBT emitter are also connected, as shown in Figure 11.

The freewheeling diode takes the place of the body diode

that otherwise exists in a power MOSFET. For IGBTs that

are copackaged with a freewheeling rectifier diode, the

datasheet will also include electrical specifications for the

diode, as shown in Table 6.

Figure 10. Turn−off Switching Illustration Showing

the Definitions of the Turn−off Switching

Characteristics

Table 6. ELECTRICAL CHARACTERISTICS OF THE DIODE

Parameter

DIODE CHARACTERISTIC

Forward voltage

Test Conditions

Symbol

Min

Typ

Max

Unit

V

= 0 V, I = 15 A

F J

V

t

1.6

1.85

V

GE

F

V

GE

= 0 V, I = 15 A, T = 150°C

Reverse recovery time

Reverse recovery charge

Reverse recovery current

Reverse recovery time

Reverse recovery charge

Reverse recovery current

270

350

5

ns

nc

A

rr

T = 25°C

J

I = 15 A, V = 200 V

Q

rr

F

R

di /dt = 200 A/ms

F

I

rrm

t

rr

350

1000

7.5

ns

nc

A

T = 125°C

J

Q

I = 15 A, V = 200 V

rr

F

R

di /dt = 200 A/ms

F

I

rrm

Forward Voltage, V_F

emitter terminal and the emitter−collector (anode−cathode)

voltage is measured.

Forward voltage is an important parameter in hard

The forward voltage of the rectifier is measured while the

IGBT gate and emitter terminals are tied together, ensuring

the IGBT is in its off−state. A forcing current enters the

switching applications. V is specified in the electrical table

F

http://onsemi.com

8

AND9068/D

for a given current and is specified at T = 25 and 150°C. The

J

datasheet also includes a graph showing the I −V

F

relationship for a typical part at T = −40, 25, and 150°C, as

J

shown in Figure 12.

35

−40°C

30

25

20

25°C

15

150°C

10

5

0

0.5

1

1.5

2

2.5

V , FORWARD VOLTAGE (V)

F

Figure 13. Diode Reverse Recovery Illustration

Showing the Definitions of the Reverse Recovery

Characteristics

Figure 12. Diode Forward Characteristic Curves for

T_J_=_−40, 25, and 1505C

Reverse Recovery Time, t_rr

The reverse recovery time, t , defines the time the diode

takes to enter the reverse blocking state after conducting in

the forward direction. It is defined as the length of time

required for the reverse current to return to 10% of its peak

Reverse Recovery Charge, Q_rr

The amount of charge that is recovered from the diode

during turn−off is referred to as reverse recovery charge, Q .

It is calculated by taking the integral of the reverse recovery

rr

current over the time period, t .

rr

reverse value (I ). It is measured from the point in time

rrm

where the diode current crosses zero. The time period is

labeled in Figure 13.

Reverse Recovery Current, I_rrm

I

is the peak current reached during diode turn off. I

rrm

depends on the initial forward diode current and the rate of

change of the diode current, dI/dt, used to turn the diode off.

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

Literature Distribution Center for ON Semiconductor

P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

For additional information, please contact your local

Sales Representative

AND9068/D

http://onsemi.com

9

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