概述
规格参数
数据手册CR04AM-12A-DTB#BD0 概述
600V - 0.4A - Thyristor Low Power Use 可控硅整流器
CR04AM-12A-DTB#BD0 规格参数
| 是否无铅： | 不含铅 | 是否Rohs认证： | 符合 |
| 生命周期： | Active | 零件包装代码： | TO-92 |
| 针数： | 3 | Reach Compliance Code： | compliant |
| ECCN代码： | EAR99 | 风险等级： | 5.84 |
| Samacsys Description： | Thyristors | 触发设备类型： | SCR |
CR04AM-12A-DTB#BD0 数据手册
通过下载CR04AM-12A-DTB#BD0数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载Preliminary Datasheet
CR04AM-12A
R07DS0636EJ0100
Rev.1.00
Thyristor
Low Power Use
Jan 16, 2012
Features
IT (AV) : 0.4 A
DRM : 600 V
IGT: 100 A
V
Planar Type
Outline
RENESAS Package code: PRSS0003EA-A
PRSS0003DE-A
(Package name: TO-92*) (Package name: TO-92(3))
2
1
1. Cathode
2. Anode
3. Gate
3
3
3
2
2
1
1
Applications
Solid state relay, igniter, strobe flasher, circuit breaker, and general purpose control applications
Maximum Ratings
Voltage class
Parameter
Symbol
Unit
12
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage Note1
DC off-state voltage Note1
VRRM
VRSM
VR(DC)
VDRM
VD(DC)
600
720
480
600
480
V
V
V
V
V
Notes: 1. With gate to cathode resistance RGK=1 k
R07DS0636EJ0100 Rev.1.00
Jan 16, 2012
Page 1 of 8
CR04AM-12A
Preliminary
Parameter
Symbol
IT(RMS)
IT(AV)
Ratings
0.63
Unit
A
Conditions
RMS on-state current
Average on-state current
0.4
A
Commercial frequency, sine half wave
180 conduction, Ta=54C
Surge on-state current
I2t for fusing
ITSM
I2t
10
A
60Hz sine half wave, 1full cycle,
peak value, non-repetitive
0.4
A2s
Value corresponding to 1cycle of half
wave 60Hz, surge on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
PGM
PG(AV)
VFGM
VRGM
IFGM
Tj
0.5
W
W
V
0.1
6
6
V
0.3
A
– 40 to +125
– 40 to +125
0.23
C
C
g
Tstg
—
Mass
Typical value
Electrical Characteristics
Parameter
Symbol
IRRM
IDRM
Min.
Typ.
—
Max.
0.5
Unit
mA
mA
Test conditions
Tj = 125C, VRRM applied
Tj = 125C, VDRM applied
RGK=1 k
Repetitive peak reverse current
Repetitive peak off-state current
—
—
—
0.5
On-state voltage
VTM
VGT
VGD
IGT
—
—
—
—
—
—
1.2
0.8
V
V
Tj = 25C, ITM = 1.2 A
instantaneous value
Tj = 25C, VD = 6 V,
IT = 0.1 A Note3
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
0.2
—
V
Tj = 125C, VD = 1/2 VDRM
RGK=1 K
1Note2
100Note2
μA
Tj = 25C, VD = 6 V,
IT = 0.1 A Note3
Holding current
IH
—
—
1.5
—
3
mA
Tj = 25°C, VD = 12 V, RGK=1 k
Junction to ambient
Thermal resistance
Rth(j-a)
150
C/W
Notes: 2. If special values of IGT are required, choose item D or E from those listed in the table below if possible.
Item
A
B
C
D
E
IGT (A)
1 to 30
20 to 50
40 to 100
1 to 50
20 to 100
The above values do not include the current flowing through the 1 k resistance between the gate and
cathode.
3. IGT, VGT measurement circuit.
60Ω
A1
I
I
GS
GT
TUT
A3
A2
6V
DC
3V
DC
V1
R
GK
1
2
V
1kΩ
GT
Switch
Switch 1 : I
Switch 2 : V
GT
measurement
measurement
(Inner resistance of voltage meter is about 1kΩ)
GT
R07DS0636EJ0100 Rev.1.00
Jan 16, 2012
Page 2 of 8
CR04AM-12A
Preliminary
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
102
101
10
8
Ta = 25°C
6
4
100
2
10−1
0
5
100
101
102
0
1
2
3
4
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current vs.
Junction Temperature
Gate Characteristics
103
102
101
100
102
101
Typical Example
V
= 6V
P
= 0.5W
GM
FGM
V
= 0.8V
GT
(Tj = 25°C)
P
= 0.1W
G(AV)
100
I
= 100μA
GT
(Tj = 25°C)
10−1
I
= 0.3V
102
FGM
V
= 0.2V
GD
10−2
10−2
10−1
100
101
0
40
80
120
–40
160
Junction Temperature (°C)
Gate Current (mA)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
100
101
102
103
103
1.0
0.8
0.6
0.4
0.2
0
Distribution
Typical Example
102
101
100
–40 –20
0
20 40 60 80 100 120
10−3
10−2
10−1
100
Junction Temperature (°C)
Time (s)
R07DS0636EJ0100 Rev.1.00
Jan 16, 2012
Page 3 of 8
CR04AM-12A
Preliminary
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
Maximum Average Power Dissipation
(Single-Phase Half Wave)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
160
140
120
100
80
60° 120°
θ = 30°
90°
θ
180°
360°
Resistive,
inductive loads
Natural convection
60
θ = 30° 90°
60° 120°
180°
θ
40
360°
20
Resistive,
inductive loads
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Average On-State Current (A)
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Average On-State Current (A)
Allowable Ambient Temperature vs.
Average On-State Current
Maximum Average Power Dissipation
(Single-Phase Full Wave)
(Single-Phase Full Wave)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
160
140
120
100
80
90°
60° 120°
180°
θ = 30°
θ
θ
360°
Resistive loads
Natural convection
60
40
θ
θ
360°
20
θ = 30° 60° 90° 120° 180°
Resistive loads
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Average On-State Current (A)
Average On-State Current (A)
Allowable Ambient Temperature vs.
Average On-State Current
(Rectangular Wave)
Maximum Average Power Dissipation
(Rectangular Wave)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
160
140
120
100
80
90° 180°
60° 120°270°
θ = 30°
θ
DC
360°
Resistive,
inductive loads
Natural convection
60
θ
40
360°
60° 120°
90° 180°
270°
20
Resistive,
inductive loads
θ = 30°
DC
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Average On-State Current (A)
Average On-State Current (A)
R07DS0636EJ0100 Rev.1.00
Jan 16, 2012
Page 4 of 8
CR04AM-12A
Preliminary
Breakover Voltage vs.
Gate to Cathode Resistance
Breakover Voltage vs.
Junction Temperature
160
120
100
80
60
40
20
0
Typical Example
Typical Example
140
120
100
80
60
40
20
R
= 1kΩ
GK
Tj = 125°C
0
–40
0
40
80
120
160
10−1
100
101
102
Gate to Cathode Resistance (kΩ)
Junction Temperature (°C)
Breakover Voltage vs.
Holding Current vs.
Rate of Rise of Off-State Voltage
Junction Temperature
160
140
120
100
80
101
100
Distribution
Typical Example
Tj = 125°C
= 1kΩ
Typical Example
R
GK
I (25°C) = 35μA
GT
60
10−1
40
20
R
= 1kΩ
GK
10−2
0
100
101
102
103
–40 –20
0
20 40 60 80 100 120 140
Rate of Rise of Off-State Voltage (V/μs)
Junction Temperature (°C)
Turn-On Time vs.
Gate Current
Holding Current vs.
Gate to Cathode Resistance
600
102
101
Typical Example
V = 100V
D
Typical Example
R = 47Ω
L
500
400
300
200
100
0
R
= 1kΩ
GK
Ta = 25°C
100
Tj = 125°C
100
10−1
10−1
101
102
10−1
100
101
102
Gate Current (mA)
Gate to Cathode Resistance (kΩ)
R07DS0636EJ0100 Rev.1.00
Jan 16, 2012
Page 5 of 8
CR04AM-12A
Preliminary
Turn-Off Time vs.
Junction Temperature
Repetitive Peak Reverse Voltage vs.
Junction Temperature
40
160
140
120
100
80
V
= 50V, V = 50V
R
D
I
T
= 2A, R
= 1kΩ
35
30
25
20
15
10
5
GK
Typical Example
Distribution
60
40
20
0
0
0
20 40 60 80 100 120 140 160
Junction Temperature (°C)
–40
0
40
80
120
160
Junction Temperature (°C)
Gate Trigger Current vs.
Gate Current Pulse Width
104
103
102
101
Typical Example
V
= 6V
D
R = 60Ω
L
Ta = 25°C
100
101
102
103
Gate Current Pulse Width (μs)
R07DS0636EJ0100 Rev.1.00
Jan 16, 2012
Page 6 of 8
CR04AM-12A
Preliminary
Package dimensions
Package Name
JEITA Package Code
SC-43A
RENESAS Code
PRSS0003EA-A
Previous Code
T920
MASS[Typ.]
0.23g
Unit: mm
TO-92*
φ5.0Max
4.4
1.251.25
Circumscribed circle φ0.7
Package Name
TO-92(3)
JEITA Package Code
SC-43A
RENESAS Code
PRSS0003DE-A
Previous Code
TO-92(3)/TO-92(3)V
MASS[Typ.]
0.23g
Unit: mm
4.8 ± 0.3
3.8 ± 0.3
0.60 Max
0.55 Max
0.42 Max
1.27
2.54
R07DS0636EJ0100 Rev.1.00
Jan 16, 2012
Page 7 of 8
CR04AM-12A
Preliminary
Ordering Information
Orderable Part Number
CR04AM-12A#B00
Packing
Quantity
Remark
Bag
Bag
Bag
Bag
500 pcs. Straight Type, TO-92*
CR04AM-12A-B#B00
CR04AM-12A-A6#B00
CR04AM-12A-BA6#B00
CR04AM-12A-TB#B00
CR04AM-12A-BTB#B00
CR04AM-12A#B10
500 pcs. Straight Type, TO-92*, IGT item:B
500 pcs. A6 Lead form, TO-92*
500 pcs. A6 Lead form, TO-92*, IGT item:B
2000 pcs. A8 Lead form, TO-92*
Adhesive Tape
Adhesive Tape
Bag
2000 pcs. A8 Lead form, TO-92*, IGT item:B
500 pcs. Straight Type, TO-92(3)
CR04AM-12A-B#B10
Bag
500 pcs. Straight Type, TO-92(3), IGT item:B
Note : Please confirm the specification about the shipping in detail.
R07DS0636EJ0100 Rev.1.00
Jan 16, 2012
Page 8 of 8
Notice
1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas
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Colophon 1.1
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