CR05BM-12A-DA6B00 概述
600V - 0.5A - Thyristor Low Power Use 600V - 0.5A - 晶闸管的低功耗应用
CR05BM-12A-DA6B00 数据手册
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PDF下载Preliminary Datasheet
CR05BM-12A
600V - 0.5A - Thyristor
R07DS0992EJ0100
Rev.1.00
Dec 20, 2012
Low Power Use
Features
IT (AV) : 0.5 A
DRM : 600 V
IGT : 100 A
Planar Type
V
Outline
RENESAS Package code: PRSS0003EA-A
(Package name: TO-92*)
1
1. Anode
2. Gate
3. Cathode
2
3
3
2
1
Applications
Igniter, solid state relay, strobe flasher, circuit breaker, and other general purpose control application
Maximum Ratings
Voltage class
Parameter
Symbol
Unit
12
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage Note1
DC off-state voltage Note1
VRRM
VRSM
VR(DC)
VDRM
VD(DC)
600
720
480
600
480
V
V
V
V
V
Notes: 1. With gate to cathode resistance RGK = 1 k.
Parameter
RMS on-state current
Average on-state current
Symbol
IT (RMS)
IT (AV)
Ratings
0.63
Unit
A
Conditions
Commercial frequency, sine half
0.4
A
wave 180 conduction, Ta = 54C
Commercial frequency, sine half
wave 180 conduction, Ta = 30C
50 Hz sine half wave 1 full cycle,
peak value, non-repetitive
0.5
8
A
A
Surge on-state current
I2t for fusion
ITSM
I2t
0.32
A2s
Value corresponding to 1 cycle of half
wave 50 Hz, surge on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate current
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
0.5
W
W
V
0.1
6
6
V
0.3
A
Junction Temperature
Storage temperature
Mass
–40 to +125
–40 to +125
0.23
C
C
g
Tstg
—
Typical value
R07DS0992EJ0100 Rev.1.00
Dec 20, 2012
Page 1 of 7
CR05BM-12A
Preliminary
Electrical Characteristics
Parameter
Symbol
IRRM
Min.
—
Typ.
—
Max.
0.5
Unit
mA
mA
Test conditions
Repetitive peak reverse current
Repetitive peak off-state current
Tj = 125C, VRRM applied
IDRM
—
—
0.5
Tj = 125C, VDRM applied,
RGK = 1 k
On-state voltage
VTM
VGT
VGD
IGT
—
—
—
—
—
—
—
—
1.2
0.8
V
V
Tc = 25C, ITM = 1.2 A,
instantaneous value
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Holding current
Tj = 25C, VD = 6 V,
IT = 0.1 A Note3
0.2
1 Note2
—
—
V
Tj = 125C, VD = 1/2 VDRM
RGK = 1 k
100Note2
5
A
mA
C/W
Tj = 25C, VD = 6 V,
IT = 0.1 A Note3
IH
Tj = 25C, VD = 12 V,
RGK = 1 k
Thermal resistance
Rth (j-a)
—
150
Junction to ambient
Notes: 2. If special values of IGT are required, choose item D or E from those listed in the table below if possible.
Item
D
E
IGT (A)
1 to 50
20 to 100
The above values do not include the current flowing through the 1 k resistance between the gate and cathode.
Notes: 3. IGT, VGT measurement circuit.
60Ω
A1
TUT
I
I
GS
GT
A3
A2
6V
DC
3V
DC
V1
R
GK
1
2
V
1kΩ
Switch
GT
Switch 1 : I
measurement
measurement
(Inner resistance of voltage meter is about 1kΩ)
GT
Switch 2 : V
GT
R07DS0992EJ0100 Rev.1.00
Dec 20, 2012
Page 2 of 7
CR05BM-12A
Preliminary
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
102
10
8
Ta = 25°C
101
6
4
100
2
10−1
0
5
100
101
102
0
1
2
3
4
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current vs.
Junction Temperature
Gate Characteristics
103
102
101
100
102
101
Typical Example
V
= 6V
P
= 0.5W
GM
FGM
V
= 0.8V
GT
(Tj = 25°C)
P
= 0.1W
G(AV)
100
I
= 100μA
(Tj = 25°C)
GT
10−1
I
= 0.3V
FGM
V
= 0.2V
GD
10−2
10−2
10−1
100
101
102
0
40
80
120
–40
160
Junction Temperature (°C)
Gate Current (mA)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
100
101
102
103
103
1.0
0.8
0.6
0.4
0.2
0
Distribution
Typical Example
102
101
100
–40 –20
0
20 40 60 80 100 120
10−3
10−2
10−1
100
Junction Temperature (°C)
Time (s)
R07DS0992EJ0100 Rev.1.00
Dec 20, 2012
Page 3 of 7
CR05BM-12A
Preliminary
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
Maximum Average Power Dissipation
(Single-Phase Half Wave)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
160
140
120
100
80
60° 120°
90°
θ = 30°
θ
180°
360°
Resistive,
inductive loads
Natural convection
60
θ = 30° 90°
60° 120°
180°
θ
40
360°
20
Resistive,
inductive loads
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Average On-State Current (A)
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Average On-State Current (A)
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
Maximum Average Power Dissipation
(Single-Phase Full Wave)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
160
140
120
100
80
90°
60° 120°
180°
θ = 30°
θ
θ
360°
Resistive loads
Natural convection
60
40
θ
θ
360°
20
θ = 30° 60° 90° 120° 180°
Resistive loads
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Average On-State Current (A)
Average On-State Current (A)
Allowable Ambient Temperature vs.
Average On-State Current
(Rectangular Wave)
Maximum Average Power Dissipation
(Rectangular Wave)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
160
140
120
100
80
90° 180°
60° 120°270°
θ = 30°
θ
DC
360°
Resistive,
inductive loads
Natural convection
60
θ
40
360°
60° 120°
90° 180°
270°
20
Resistive,
inductive loads
θ = 30°
DC
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Average On-State Current (A)
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Average On-State Current (A)
R07DS0992EJ0100 Rev.1.00
Dec 20, 2012
Page 4 of 7
CR05BM-12A
Preliminary
Breakover Voltage vs.
Gate to Cathode Resistance
Breakover Voltage vs.
Junction Temperature
160
120
100
80
60
40
20
0
Typical Example
Typical Example
140
120
100
80
60
40
20
R
= 1kΩ
GK
Tj = 125°C
0
–40
0
40
80
120
160
10−1
100
101
102
Gate to Cathode Resistance (kΩ)
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
Holding Current vs.
Junction Temperature
160
140
120
100
80
101
Distribution
Typical Example
Tj = 125°C
= 1kΩ
Typical Example
(25°C) = 35μA
R
GK
I
GT
100
60
10−1
40
20
R
= 1kΩ
GK
10−2
–40
0
100
101
102
103
0
40
80
120
160
Rate of Rise of Off-State Voltage (V/μs)
Junction Temperature (°C)
Turn-On Time vs.
Gate Current
Holding Current vs.
Gate to Cathode Resistance
600
102
Typical Example
V = 100V
D
R = 47Ω
Typical Example
L
500
400
300
200
100
0
R
= 1kΩ
GK
Ta = 25°C
101
100
Tj = 125°C
100
10−1
10−1
101
102
10−1
100
101
102
Gate Current (mA)
Gate to Cathode Resistance (kΩ)
R07DS0992EJ0100 Rev.1.00
Dec 20, 2012
Page 5 of 7
CR05BM-12A
Preliminary
Turn-Off Time vs.
Junction Temperature
Repetitive Peak Reverse Voltage vs.
Junction Temperature
40
160
140
120
100
80
V
= 50V, V = 50V
R
D
I
T
= 2A, R
= 1kΩ
GK
35
30
25
20
15
10
5
Typical Example
Distribution
60
40
20
0
0
–40
0
20 40 60 80 100 120 140 160
Junction Temperature (°C)
0
40
80
120
160
Junction Temperature (°C)
Gate Trigger Current vs.
Gate Current Pulse Width
104
103
102
101
Typical Example
V
= 6V
= 60Ω
D
R
Ta = 25°C
L
100
101
102
103
Gate Current Pulse Width (μs)
R07DS0992EJ0100 Rev.1.00
Dec 20, 2012
Page 6 of 7
CR05BM-12A
Preliminary
Package Dimensions
Package Name
TO-92*
JEITA Package Code
SC-43A
RENESAS Code
PRSS0003EA-A
Previous Code
T920
MASS[Typ.]
0.23g
Unit: mm
φ5.0Max
4.4
1.251.25
Circumscribed circle φ0.7
Ordering Information
Orderable Part Number (example)
CR05BM-12A#B00
Packing
Bag
Quantity
Remark
500 pcs. Straight type
CR05BM-12A-D#B00
Bag
500 pcs. Straight type, IGT item: D
500 pcs. A6 Lead form
CR05BM-12A-A6#B00
CR05BM-12A-DA6#B00
CR05BM-12A-TB#B00
CR05BM-12A-DTB#B00
Bag
Bag
500 pcs. A6 Lead form, IGT item: D
2000 pcs. A8 Lead form
Adhesive Tape
Adhesive Tape
2000 pcs. A8 Lead form, IGT item: D
Note: Please confirm the specification about the shipping in detail.
R07DS0992EJ0100 Rev.1.00
Dec 20, 2012
Page 7 of 7
SALES OFFICES
http://www.renesas.com
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada
Tel: +1-905-898-5441, Fax: +1-905-898-3220
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-651-700, Fax: +44-1628-651-804
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre Singapore 339949
Tel: +65-6213-0200, Fax: +65-6213-0300
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2012 Renesas Electronics Corporation. All rights reserved.
Colophon 2.2
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