概述
规格参数
数据手册CR8CM-12A#BH0 概述
600V - 8A - Thyristor Medium Power Use 可控硅整流器
CR8CM-12A#BH0 规格参数
| 是否Rohs认证： | 符合 | 生命周期： | Active |
| 零件包装代码： | TO-220ABA | 针数： | 4 |
| Reach Compliance Code： | compliant | 风险等级： | 5.75 |
| 触发设备类型： | SCR | Base Number Matches： | 1 |
CR8CM-12A#BH0 数据手册
通过下载CR8CM-12A#BH0数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载CR8CM-12A
Thyristor
Medium Power Use
REJ03G1707-0100
Rev.1.00
Jul 03, 2008
Features
•
•
•
IT (AV) : 8 A
VDRM : 600 V
•
•
Non-Insulated Type
Planar Passivation Type
I
GT : 15 mA
Outline
RENESAS Package code: PRSS0004AA-A
(Package name: TO-220)
4
2, 4
1. Cathode
2. Anode
3. Gate
4. Anode
3
1
1
2
3
Applications
Switching mode power supply, regulator for autocycle, motor control, heater control, and other general purpose control
applications
Maximum Ratings
Voltage class
Parameter
Symbol
Unit
12
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
VRRM
VRSM
600
720
480
600
480
V
V
V
V
V
VR (DC)
VDRM
Repetitive peak off-state voltage
DC off-state voltage
VD (DC)
REJ03G1707-0100 Rev.1.00 Jul 03, 2008
Page 1 of 6
CR8CM-12A
Parameter
Symbol
IT (RMS)
IT (AV)
Ratings
12.6
8
Unit
A
Conditions
RMS on-state current
Average on-state current
A
Commercial frequency, sine half wave
180° conduction, Tc = 99°CNote1
Surge on-state current
I2t for fusing
ITSM
I2t
120
72
A
50 Hz sine half wave 1 full cycle,
peak value, non-repetitive
A2s
Value corresponding to 1 cycle of half
wave 50 Hz, surge on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
5
W
W
V
0.5
6
10
2
V
A
– 40 to +125
– 40 to +125
2.0
°C
°C
g
Tstg
—
Mass
Typical value
Electrical Characteristics
Parameter
Symbol
IRRM
Min.
Typ.
—
Max.
2.0
Unit
mA
mA
V
Test conditions
Tj = 125°C, VRRM applied
Tj = 125°C, VDRM applied
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
—
—
—
IDRM
—
2.0
VTM
—
1.4
Tc = 25°C, ITM = 25 A,
instantaneous value
VGT
VGD
IGT
—
0.2
—
—
—
—
15
—
1.0
—
V
V
Tj = 25°C, VD = 6 V, IT = 1 A
Tj = 125°C, VD = 1/2 VDRM
Tj = 25°C, VD = 6 V, IT = 1 A
Tj = 25°C, VD = 12 V
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Holding current
15
—
mA
mA
°C/W
IH
—
Thermal resistance
Rth (j-c)
—
2.0
Junction to caseNote1 Note2
Notes: 1. Case temperature is measured at anode tab 1.5 mm away from the molded case.
2. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W.
REJ03G1707-0100 Rev.1.00 Jul 03, 2008
Page 2 of 6
CR8CM-12A
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
103
7
5
200
180
160
140
120
Tc = 125°C
3
2
102
7
5
100
80
3
2
101
7
5
60
40
20
0
3
2
100
100
2
3 4 5 7 101
2
3 4 5 7 102
0
1
2
3
4
5
On-State Voltage (V)
Conduction Time (Cycles at 50Hz)
Gate Trigger Current vs.
Junction Temperature
Gate Characteristics
102
7
5
103
7
5
Typical Example
3
2
3
2
V
FGM
= 6V
P
= 5W
GM
101
7
102
7
5
5
P
G(AV)
= 0.5W
3
2
3
2
V
GT
= 1V
100
7
5
101
7
5
I
= 15mA
GT
3
2
3
2
V
= 0.2V
I
= 2A
GD
FGM
10–1
100
5 7 101 2 3 5 7 102 2 3 5 7 103 2 3 5
–60 –40–20 0 20 40 60 80 100120140
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
103
102
Typical Example
7
5
3
2
101
102
7
5
100
3
2
101
10–1
10–3
10–2
10–1
100
101
–60–40–20 0 20 40 60 80 100120140
Junction Temperature (°C)
Time (s)
REJ03G1707-0100 Rev.1.00 Jul 03, 2008
Page 3 of 6
CR8CM-12A
Allowable Case Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
Maximum Average Power Dissipation
(Single-Phase Half Wave)
20
160
140
18
16
14
12
10
8
θ
180°
120°
90°
60°
360°
120
100
Resistive,
inductive loads
θ = 30°
80
60
180°
120°
6
4
2
0
θ
90°
40
20
0
360°
60°
Resistive,
inductive loads
θ = 30°
0
2
4
6
8
10 12 14 16
0
2
4
6
8
10 12 14 16
Average On-State Current (A)
Average On-State Current (A)
Allowable Case Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
Maximum Average Power Dissipation
(Single-Phase Full Wave)
20
160
140
Resistive
loads
18
16
14
12
10
θ
θ
360°
120
100
180°
120°
90°
60°
θ = 30°
80
60
40
20
0
8
6
4
180°
120°
θ
θ
90°
360°
60°
6
2
0
Resistive loads
10 12 14 16
θ = 30°
0
2
4
6
8
0
2
4
8
10 12 14 16
Average On-State Current (A)
Average On-State Current (A)
Allowable Case Temperature vs.
Average On-State Current
(Rectangular Wave)
Maximum Average Power Dissipation
(Rectangular Wave)
20
160
140
120
100
80
Resistive,
inductive loads
180°
18
16
14
12
10
8
θ
120°
90°
360°
DC
270°
60°
θ = 30°
60
6
θ
40
4
360°
180°
270°
60°
20
Resistive,
inductive loads
2
DC
10 12 14 16
Average On-State Current (A)
120°
90°
θ = 30°
0
0
0
0
2
4
6
8
10 12 14 16
2
4
6
8
Average On-State Current (A)
REJ03G1707-0100 Rev.1.00 Jul 03, 2008
Page 4 of 6
CR8CM-12A
Breakover Voltage vs.
Junction Temperature
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
160
140
120
100
80
160
Typical Example
Typical Example
Tj = 125°C
140
120
100
80
60
40
20
0
60
40
20
0
–60–40–20 0 20 40 60 80 100120140
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/µs)
Turn-Off Time vs.
Junction Temperature
Holding Current vs.
Junction Temperature
103
80
70
60
50
40
30
20
10
0
Typical Example
I = 8A,
T
7
5
– di/dt = 5A/µs,
= 300V,
V
D
dv/dt = 20V/µs,
= 50V
3
2
V
R
102
7
5
Typical Example
Distribution
3
2
101
–60 –40–20 0 20 40 60 80 100120140
0
20 40 60 80 100 120 140 160
Junction Temperature (°C)
Junction Temperature (°C)
Repetitive Peak Reverse Voltage vs.
Junction Temperature
Gate Trigger Current vs.
Gate Current Pulse Width
103
7
160
Typical Example
Typical Example
140
120
100
80
5
3
2
102
7
5
60
40
3
2
20
101
0
–60–40–20 0 20 40 60 80 100120140
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
Junction Temperature (°C)
Gate Current Pulse Width (µs)
REJ03G1707-0100 Rev.1.00 Jul 03, 2008
Page 5 of 6
CR8CM-12A
Package Dimensions
Package Name
TO-220
JEITA Package Code
SC-46
RENESAS Code
PRSS0004AA-A
Previous Code
MASS[Typ.]
2.0g
Unit: mm
10.5Max
4.5
1.3
φ3.6
1.0
0.8
0.5
2.6
2.54
2.54
Order Code
Standard order
code example
Lead form
Standard packing
Quantity
Standard order code
Straight type
Lead form
Vinyl sack
Plastic Magazine (Tube)
100 Type name
CR8CM-12A
50 Type name – Lead forming code
CR8CM-12A-A8
Note : Please confirm the specification about the shipping in detail.
REJ03G1707-0100 Rev.1.00 Jul 03, 2008
Page 6 of 6
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Notes:
1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes
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but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples.
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Colophon .7.2
CR8CM-12A#BH0 相关器件
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| CR8CM-12A-A8#BB0 | RENESAS | SCR | 获取价格 |
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| CR8CM-12A_13 | RENESAS | 600V - 8A - Thyristor Medium Power Use | 获取价格 |
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| CR8CM-12B#BH0 | RENESAS | 600V - 8A - Thyristor Medium Power Use | 获取价格 |
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| CR8CM-12B-A8 | RENESAS | Thyristor Medium Power Use | 获取价格 |
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| CR8CM-12B-A8#B00 | RENESAS | 12.6 A, 600 V, SCR, TO-220AB, SC-46, TO-220, 3 PIN | 获取价格 |
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| CR8CM-12B-A8B00 | RENESAS | Thyristor Medium Power Use | 获取价格 |
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