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HSB226S

更新时间：2025-05-22 07:27:38
品牌：RENESAS
描述：Silicon Schottky Barrier Diode for High Speed Switching

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HSB226S 概述

Silicon Schottky Barrier Diode for High Speed Switching 硅肖特基二极管，高速开关 整流二极管

HSB226S 规格参数

生命周期：Obsolete零件包装代码：SC-70
包装说明：SC-70, CMPAK-3针数：3
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.70风险等级：5.57
Is Samacsys：N配置：SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：0.33 VJESD-30 代码：R-PDSO-G3
元件数量：2端子数量：3
最高工作温度：125 °C最大输出电流：0.05 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE认证状态：Not Qualified
最大重复峰值反向电压：25 V子类别：Rectifier Diodes
表面贴装：YES技术：SCHOTTKY
端子形式：GULL WING端子位置：DUAL
Base Number Matches：1

HSB226S 数据手册

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HSB226S  
Silicon Schottky Barrier Diode for High Speed Switching  
REJ03G0591-0200  
Rev.2.00  
Sep 15, 2006  
Features  
•
•
Low reverse current, Low capacitance.  
CMPAK package is suitable for high density surface mounting and high speed assembly.  
Ordering Information  
Type No.  
Laser Mark  
Package Name  
Package Code  
HSB226S  
E7  
CMPAK  
PTSP0003ZB-A  
Pin Arrangement  
3
1. Cathode 2  
2. Anode 1  
2
1
3. Cathode 1  
Anode 2  
(Top View)  
Rev.2.00 Sep 15, 2006 page 1 of 4  
HSB226S  
Absolute Maximum Ratings  
(Ta = 25°C)  
Unit  
Item  
Symbol  
Value  
25  
Repetitive peak reverse voltage  
Non-Repetitive peak forward surge current IFSM *1 *2  
VRRM  
V
200  
mA  
mA  
°C  
Forward current  
IF *2  
50  
Junction temperature  
Storage temperature  
Notes: 1. 10 ms sine wave 1 pulse  
2. Two device total  
Tj  
125  
Tstg  
−55 to +125  
°C  
Electrical Characteristics *  
(Ta = 25°C)  
Test Condition  
Item  
Symbol  
Min  
—
Typ  
—
Max  
0.33  
0.38  
450  
Unit  
Forward voltage  
VF1  
VF2  
IR  
V
IF = 1 mA  
—
—
IF = 5 mA  
VR = 20 V  
Reverse current  
Capacitance  
—
—
nA  
pF  
C
—
—
2.80  
VR = 1 V, f = 1 MHz  
Note: Per one device  
Rev.2.00 Sep 15, 2006 page 2 of 4  
HSB226S  
Main Characteristic  
101  
100  
10–4  
10–5  
10–6  
10–1  
10–2  
10–3  
Ta = 75°C  
10–4  
10–5  
10–6  
10–7  
10–8  
Ta = 75°C  
Ta = 25°C  
Ta = 25°C  
10–7  
10–8  
0
0.2  
0.4  
0.6  
0.8  
1.0  
0
10  
20  
30  
40  
Forward voltage VF (V)  
Reverse voltage VR (V)  
Fig.1 Forward current vs. Forward voltage  
Fig.2 Reverse current vs. Reverse voltage  
f = 1MHz  
10  
1.0  
0.1  
0.1  
1.0  
10  
Reverse voltage VR (V)  
Fig.3 Capacitance vs. Reverse voltage  
Rev.2.00 Sep 15, 2006 page 3 of 4  
HSB226S  
Package Dimensions  
JEITA Package Code  
RENESAS Code  
Previous Code  
MASS[Typ.]  
0.006g  
SC-70  
PTSP0003ZB-A  
CMPAK / CMPAKV  
D
e
Q
c
H
E
E
L
A
A
b
e
Reference  
Symbol  
Dimension in Millimeters  
Min  
0.8  
0
0.8  
0.25  
0.1  
1.8  
1.15  
-
1.8  
-
-
-
-
Nom Max  
A
2
A
A
-
-
1.1  
0.1  
1.0  
0.4  
A
1
A
2
0.9  
0.3  
A
1
b
c
D
E
e
0.16 0.26  
2.0 2.2  
1.25 1.35  
e
1
b
0.65  
2.1  
0.425  
-
1.5  
-
-
2.4  
-
0.45  
-
l
1
H
E
c
L
b
2
b
2
e
1
A — A Section  
l
0.9  
-
1
Pattern of terminal position areas  
Q
-
0.2  
Rev.2.00 Sep 15, 2006 page 4 of 4  
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Keep safety first in your circuit designs!  
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble  
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.  
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary  
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.  
Notes regarding these materials  
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's  
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.  
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,  
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.  
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publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is  
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product  
information before purchasing a product listed herein.  
The information described here may contain technical inaccuracies or typographical errors.  
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.  
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor  
home page (http://www.renesas.com).  
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evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes  
no responsibility for any damage, liability or other loss resulting from the information contained herein.  
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life  
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a  
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use.  
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cannot be imported into a country other than the approved destination.  
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.  
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.  
RENESAS SALES OFFICES  
http://www.renesas.com  
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.  
Renesas Technology America, Inc.  
450 Holger Way, San Jose, CA 95134-1368, U.S.A  
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501  
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Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.  
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900  
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Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120  
Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898  
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© 2006. Renesas Technology Corp., All rights reserved. Printed in Japan.  
Colophon .6.0  

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