S29AL004D70MAI021中文资料_数据手册_规格书

S29AL004D

4 Megabit (512 K x 8-Bit/256 K x 16-Bit)

CMOS 3.0 Volt-only Boot Sector Flash Memory

S29AL004D Cover Sheet

Data Sheet

This product has been retired and is not recommended for designs. For new and current designs,

S29AL008J supercedes S29AL004D. This is the factory-recommended migration path. Please refer to the

S29AL008J data sheet for specifications and ordering information.

Availability of this document is retained for reference and historical purposes only.

Notice to Readers: This document states the current technical specifications regarding the Spansion

product(s) described herein. Each product described herein may be designated as Advance Information,

Preliminary, or Full Production. See Notice On Data Sheet Designations for definitions.

Publication Number S29AL004D_00

Revision A

Amendment 6

Issue Date February 27, 2009

D a t a S h e e t

Notice On Data Sheet Designations

Spansion Inc. issues data sheets with Advance Information or Preliminary designations to advise readers of

product information or intended specifications throughout the product life cycle, including development,

qualification, initial production, and full production. In all cases, however, readers are encouraged to verify

that they have the latest information before finalizing their design. The following descriptions of Spansion data

sheet designations are presented here to highlight their presence and definitions.

Advance Information

The Advance Information designation indicates that Spansion Inc. is developing one or more specific

products, but has not committed any design to production. Information presented in a document with this

designation is likely to change, and in some cases, development on the product may discontinue. Spansion

Inc. therefore places the following conditions upon Advance Information content:

“This document contains information on one or more products under development at Spansion Inc.

The information is intended to help you evaluate this product. Do not design in this product without

contacting the factory. Spansion Inc. reserves the right to change or discontinue work on this proposed

product without notice.”

Preliminary

The Preliminary designation indicates that the product development has progressed such that a commitment

to production has taken place. This designation covers several aspects of the product life cycle, including

product qualification, initial production, and the subsequent phases in the manufacturing process that occur

before full production is achieved. Changes to the technical specifications presented in a Preliminary

document should be expected while keeping these aspects of production under consideration. Spansion

places the following conditions upon Preliminary content:

“This document states the current technical specifications regarding the Spansion product(s)

described herein. The Preliminary status of this document indicates that product qualification has been

completed, and that initial production has begun. Due to the phases of the manufacturing process that

require maintaining efficiency and quality, this document may be revised by subsequent versions or

modifications due to changes in technical specifications.”

Combination

Some data sheets contain a combination of products with different designations (Advance Information,

Preliminary, or Full Production). This type of document distinguishes these products and their designations

wherever necessary, typically on the first page, the ordering information page, and pages with the DC

Characteristics table and the AC Erase and Program table (in the table notes). The disclaimer on the first

page refers the reader to the notice on this page.

Full Production (No Designation on Document)

When a product has been in production for a period of time such that no changes or only nominal changes

are expected, the Preliminary designation is removed from the data sheet. Nominal changes may include

those affecting the number of ordering part numbers available, such as the addition or deletion of a speed

option, temperature range, package type, or V_IOrange. Changes may also include those needed to clarify a

description or to correct a typographical error or incorrect specification. Spansion Inc. applies the following

conditions to documents in this category:

“This document states the current technical specifications regarding the Spansion product(s)

described herein. Spansion Inc. deems the products to have been in sufficient production volume such

that subsequent versions of this document are not expected to change. However, typographical or

specification corrections, or modifications to the valid combinations offered may occur.”

Questions regarding these document designations may be directed to your local sales office.

ii

S29AL004D

S29AL004D_00_A6 February 27, 2009

S29AL004D

4 Megabit (512 K x 8-Bit/256 K x 16-Bit)

CMOS 3.0 Volt-only Boot Sector Flash Memory

Data Sheet

This product has been retired and is not recommended for designs. For new and current designs, S29AL008J supercedes

S29AL004D. This is the factory-recommended migration path. Please refer to the S29AL008J data sheet for specifications and

ordering information.

Distinctive Characteristics

Architectural Advantages

Performance Characteristics

Single Power Supply Operation

– 2.7 to 3.6 volt read and write operations for battery-powered

applications

High Performance

– Access times as fast as 55 ns

– Extended temperature range (-40°C to +125°C)

Manufactured on 200 nm Process Technology

– Compatible with 0.32 µm Am29LV400B and MBM29LV400T/BC

Flexible Sector Architecture

Ultra-low Power Consumption (typical values at 5 MHz)

– 200 nA Automatic Sleep mode current

– 200 nA standby mode current

– 9 mA read current

– 20 mA program/erase current

– One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and seven 64 Kbyte

sectors (byte mode)

– One 8 Kword, two 4 Kword, one 16 Kword, and seven 32 Kword

sectors (word mode)

– Supports full chip erase

Cycling Endurance: 1,000,000 cycles per sector typical

Data Retention: 20 years typical

Unlock Bypass Program Command

– Reduces overall programming time when issuing multiple program

command sequences

Package Options

48-ball FBGA

48-pin TSOP

44-pin SO

Top or Bottom Boot Block Configurations Available

Embedded Algorithms

– Embedded Erase algorithm automatically preprograms and erases

the entire chip or any combination of designated sectors

– Embedded Program algorithm automatically writes and verifies data

at specified addresses

Software Features

Data# Polling and Toggle Bits

– Provides a software method of detecting program or erase operation

completion

Compatibility with JEDEC Standards

– Pinout and software compatible with single-power supply Flash

– Superior inadvertent write protection

Erase Suspend/Erase Resume

– Suspends an erase operation to read data from, or program data to,

a sector that is not being erased, then resumes the erase operation

Sector Protection Features

– A hardware method of locking a sector to prevent any program or

erase operations within that sector

Hardware Features

– Sectors can be locked in-system or via programming equipment

– Temporary Sector Unprotect feature allows code changes in

previously locked sectors

Ready/Busy# Pin (RY/BY#)

– Provides a hardware method of detecting program or erase cycle

completion

Hardware Reset Pin (RESET#)

– Hardware method to reset the device to reading array data

Publication Number S29AL004D_00

Revision A

Amendment 6

Issue Date February 27, 2009

D a t a S h e e t

General Description

The S29AL004D is a 4 Mbit, 3.0 volt-only Flash memory organized as 524,288 bytes or 262,144 words. The

device is offered in 48-ball FBGA, 44-pin SO, and 48-pin TSOP packages. The word-wide data (x16) appears

on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. This device requires only a single, 3.0 volt

V_CCsupply to perform read, program, and erase operations. A standard EPROM programmer can also be

used to program and erase the device.

This device is manufactured using Spansion’s 200 nm process technology, and offers all the features and

benefits of the Am29LV400B and MBM29LV400T/BC, which were manufactured using 320 nm process

technology.

The standard device offers access times of 70 and 90 ns, allowing high speed microprocessors to operate

without wait states. To eliminate bus contention the device has separate chip enable (CE#), write enable

(WE#) and output enable (OE#) controls.

The device requires only a single 3.0 volt power supply for both read and write functions. Internally

generated and regulated voltages are provided for the program and erase operations.

The device is entirely command set compatible with the JEDEC single-power-supply Flash standard.

Commands are written to the command register using standard microprocessor write timings. Register

contents serve as input to an internal state-machine that controls the erase and programming circuitry. Write

cycles also internally latch addresses and data needed for the programming and erase operations. Reading

data out of the device is similar to reading from other Flash or EPROM devices.

Device programming occurs by executing the program command sequence. This initiates the Embedded

Program algorithm—an internal algorithm that automatically times the program pulse widths and verifies

proper cell margin. The Unlock Bypass mode facilitates faster programming times by requiring only two write

cycles to program data instead of four.

Device erasure occurs by executing the erase command sequence. This initiates the Embedded Erase

algorithm—an internal algorithm that automatically preprograms the array (if it is not already programmed)

before executing the erase operation. During erase, the device automatically times the erase pulse widths

and verifies proper cell margin.

The host system can detect whether a program or erase operation is complete by observing the RY/BY# pin,

or by reading the DQ7 (Data# Polling) and DQ6 (toggle) status bits. After a program or erase cycle is

completed, the device is ready to read array data or accept another command.

The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the

data contents of other sectors. The device is fully erased when shipped from the factory.

Hardware data protection measures include a low V_CCdetector that automatically inhibits write operations

during power transitions. The hardware sector protection feature disables both program and erase

operations in any combination of the sectors of memory. This can be achieved in-system or via programming

equipment.

The Erase Suspend feature enables the user to put erase on hold for any period of time to read data from, or

program data to, any sector that is not selected for erasure. True background erase can thus be achieved.

The hardware RESET# pin terminates any operation in progress and resets the internal state machine to

reading array data. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also

reset the device, enabling the system microprocessor to read the boot-up firmware from the Flash memory.

The device offers two power-saving features. When addresses are stable for a specified amount of time, the

device enters the automatic sleep mode. The system can also place the device into the standby mode.

Power consumption is greatly reduced in both these modes.

Spansion’s Flash technology combines years of Flash memory manufacturing experience to produce the

highest levels of quality, reliability and cost effectiveness. The device electrically erases all bits within a

sector simultaneously via Fowler-Nordheim tunneling. The data is programmed using hot electron injection.

2

S29AL004D

S29AL004D_00_A6 February 27, 2009

D a t a S h e e t

Table of Contents

Distinctive Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

General Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

1.

2.

3.

Product Selector Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3.1

Special Handling Instructions for FBGA Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

4.

5.

6.

7.

Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Ordering Information (Standard Products) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Device Bus Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

7.1

7.2

7.3

7.4

7.5

7.6

7.7

7.8

7.9

Word/Byte Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Requirements for Reading Array Data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Writing Commands/Command Sequences . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Program and Erase Operation Status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Standby Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Automatic Sleep Mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

RESET#: Hardware Reset Pin. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Output Disable Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Autoselect Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

7.10 Sector Protection/Unprotection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

7.11 Temporary Sector Unprotect . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

7.12 Hardware Data Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

8.

9.

Command Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

8.1

8.2

8.3

8.4

8.5

8.6

8.7

Reading Array Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Reset Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Autoselect Command Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Word/Byte Program Command Sequence. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Chip Erase Command Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Sector Erase Command Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Erase Suspend/Erase Resume Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Write Operation Status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

9.1

9.2

9.3

9.4

9.5

9.6

9.7

DQ7: Data# Polling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

RY/BY#: Ready/Busy#. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

DQ6: Toggle Bit I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

DQ2: Toggle Bit II . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

Reading Toggle Bits DQ6/DQ2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

DQ5: Exceeded Timing Limits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

DQ3: Sector Erase Timer. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

10. Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

11. Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

12. DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28

12.1 Zero Power Flash. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29

13. Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

14. Key to Switching Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

15. AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31

15.1 Read Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31

15.2 Erase/Program Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34

16. Erase And Programming Performance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40

February 27, 2009 S29AL004D_00_A6

S29AL004D

3

D a t a S h e e t

17. Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41

17.1 TS 048—48-Pin Standard TSOP. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41

17.2 VBK 048—48 Ball Fine-Pitch Ball Grid Array (FBGA) 8.15 x 6.15 mm . . . . . . . . . . . . . . . . . 42

17.3 SO 044—44-Pin Small Outline Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43

18. Revision Summary. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44

18.1 Revision A0 (November 12, 2004). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44

18.2 Revision A1 (February 18, 2005). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44

18.3 Revision A2 (June 1, 2005) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44

18.4 Revision A3 (June 21, 2005) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45

18.5 Revision A4 (May 22, 2006). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45

18.6 Revision A5 (June 22, 2006) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45

18.7 Revision A6 (February 27, 2009). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45

4

S29AL004D

S29AL004D_00_A6 February 27, 2009

D a t a S h e e t

1. Product Selector Guide

Family Part Number

Full Voltage Range: V = 2.7–3.6 V

S29AL004D

Speed Options

55

25

70

30

90

35

CC

Max access time, ns (t

)

ACC

Max CE# access time, ns (t

Max OE# access time, ns (t

Note

)

CE

)

OE

See AC Characteristics on page 31 for full specifications.

2. Block Diagram

DQ0–DQ15 (A-1)

RY/BY#

V

CC

Sector Switches

V

SS

Erase Voltage

Generator

Input/Output

Buffers

RESET#

State

WE#

Control

BYTE#

Command

Register

PGM Voltage

Generator

Data

Latch

Chip Enable

Output Enable

Logic

STB

CE#

OE#

Y-Decoder

Y-Gating

STB

V

Detector

CC

Timer

Cell Matrix

X-Decoder

A0–A17

February 27, 2009 S29AL004D_00_A6

S29AL004D

5

D a t a S h e e t

3. Connection Diagrams

A15

A14

A13

A12

A11

A10

A9

1

2

3

4

5

6

7

8

48

47

46

45

44

43

42

41

40

39

38

37

36

35

34

33

32

31

30

29

28

27

26

25

A16

BYTE#

V_SS

DQ15/A-1

DQ7

DQ14

DQ6

DQ13

DQ5

DQ12

DQ4

V_CC

DQ11

DQ3

DQ10

DQ2

DQ9

DQ1

DQ8

DQ0

OE#

V_SS

CE#

A0

A8

NC

WE#

RESET#

NC

RY/BY#

NC

9

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

Standard TSOP

A17

A7

A6

A5

A4

A3

A2

A1

NC

RY/BY#

A17

A7

1

2

3

4

5

6

7

8

9

44 RESET#

43 WE#

42 A8

41 A9

A6

40 A10

A5

39 A11

A4

38 A12

A3

37 A13

A2

36 A14

A1 10

A0 11

35 A15

SO

34 A16

CE# 12

V_SS13

33 BYTE#

32 V_SS

OE# 14

DQ0 15

DQ8 16

DQ1 17

DQ9 18

DQ2 19

DQ10 20

DQ3 21

DQ11 22

31 DQ15/A-1

30 DQ7

29 DQ14

28 DQ6

27 DQ13

26 DQ5

25 DQ12

24 DQ4

23 V_CC

6

S29AL004D

S29AL004D_00_A6 February 27, 2009

D a t a S h e e t

FBGA

Top View, Balls Facing Down

A6

B6

C6

D6

E6

F6

G6

H6

A13

A12

A14

A15

A16

BYTE# DQ15/A-1 V_SS

A5

A9

B5

A8

C5

D5

E5

F5

G5

H5

A10

A11

DQ7

DQ14

DQ13

DQ6

A4

B4

C4

D4

E4

F4

G4

H4

WE# RESET#

NC

DQ5

DQ12

V_CC

DQ4

A3

B3

C3

D3

E3

F3

G3

H3

RY/BY#

NC

DQ2

DQ10

DQ11

DQ3

A2

A7

B2

C2

A6

D2

A5

E2

F2

G2

H2

A17

DQ0

DQ8

DQ9

DQ1

A1

A3

B1

A4

C1

A2

D1

A1

E1

A0

F1

G1

H1

CE#

OE#

V_SS

3.1

Special Handling Instructions for FBGA Package

Special handling is required for Flash Memory products in FBGA packages. Flash memory devices in FBGA

packages may be damaged if exposed to ultrasonic cleaning methods. The package and/or data integrity

may be compromised if the package body is exposed to temperatures above 150°C for prolonged periods of

time.

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7

D a t a S h e e t

4. Pin Configuration

A0–A17

DQ0–DQ14

DQ15/A-1

BYTE#

CE#

18 addresses

15 data inputs/outputs

DQ15 (data input/output, word mode), A-1 (LSB address input, byte mode)

Selects 8-bit or 16-bit mode

Chip enable

OE#

Output enable

WE#

Write enable

RESET#

RY/BY#

Hardware reset pin, active low

Ready/Busy# output

3.0 volt-only single power supply

V

CC

(see Product Selector Guide on page 5 for speed options and voltage supply tolerances)

V

Device ground

SS

NC

Pin not connected internally

5. Logic Symbol

18

A0–A17

16 or 8

DQ0–DQ15

(A-1)

CE#

OE#

WE#

RESET#

BYTE#

RY/BY#

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6. Ordering Information (Standard Products)

This product has been retired and is not recommended for designs. For new and current designs, S29AL008J

supercedes S29AL004D. This is the factory-recommended migration path. Please refer to the S29AL008J

data sheet for specifications and ordering information.

Spansion standard products are available in several packages and operating ranges. The order number

(Valid Combination) is formed by a combination of the elements below.

S29AL004D

55

T

A

I

01

0

Packing Type

0

1

2

3

= Tray

= Tube

= 7” Tape and Reel

= 13” Tape and Reel

Model Number

01 = V = 2.7 - 3.6V, top boot sector device

CC

R1 = V = 3.0 - 3.6V, top boot sector device

CC

02 = V = 2.7 - 3.6V, bottom boot sector device

CC

R2 = V = 3.0 - 3.6V, bottom boot sector device

CC

Temperature Range

I

N

= Industrial (-40°C to +85°C)

= Extended (-40°C to +125°C)

Package Material Set

A

F

= Standard

= Pb-Free

Package Type

T

B

M

= Thin Small Outline Package (TSOP) Standard Pinout

= Fine-pitch Ball-Grid Array Package

= Small Outline Package (SOP) Standard Pinout

Speed Option

55 = 55 ns Access Speed

70 = 70 ns Access Speed

90 = 90 ns Access Speed

Device Number/Description

S29AL004D

4 Megabit Flash Memory manufactured using 200 nm process technology

3.0 Volt-only Read, Program, and Erase

S29AL004D Valid Combinations

Package Type,

Speed

Option

Material, and

Temperature Range

Model

Number

Device Number

Packing Type

Package Description

TAI, TFI

TAN, TFN

01, 02

R1, R2

01, 02

R1, R2

01, 02

R1, R2

01, 02

55

70, 90

55

0, 3 (Note 1)

TS048 (Note 3)

VBK048 (Note 4)

SO044 (Note 3)

TSOP

TAI, TFI, TAN, TFN

BAI, BFI

Fine-Pitch

BGA

S29AL004D

BAN, BFN

0, 2, 3 (Note 1)

0, 1, 3 (Note 2)

70, 90

55

BAI, BFI, BAN, BFN

MAI, MFI

MAN, MFN

SOP

70, 90

MAI, MFI, MAN, MFN

Notes

1. Type 0 is standard. Specify other options as required.

2. Type 1 is standard. Specify other options as required.

3. TSOP and SOP package markings omit packing type designator from ordering part number.

4. BGA package marking omits leading S29 and packing type designator from ordering part number.

Valid Combinations

Valid Combinations list configurations planned to be supported in volume for this device. Consult your local

sales office to confirm availability of specific valid combinations and to check on newly released

combinations.

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7. Device Bus Operations

This section describes the requirements and use of the device bus operations, which are initiated through the

internal command register. The command register itself does not occupy any addressable memory location.

The register is composed of latches that store the commands, along with the address and data information

needed to execute the command. The contents of the register serve as inputs to the internal state machine.

The state machine outputs dictate the function of the device. Table 7.1 lists the device bus operations, the

inputs and control levels they require, and the resulting output. The following subsections describe each of

these operations in further detail.

Table 7.1 S29AL004D Device Bus Operations

DQ8–DQ15

Addresses

(Note 1)

DQ0–

DQ7

BYTE#

Operation

CE#

L

OE# WE#

RESET#

= V

BYTE# = V

IL

IH

Read

L

H

X

H

X

H

L

H

A

D

OUT

IN

OUT

DQ8–DQ14 = High-Z,

DQ15 = A-1

Write

L

A

D

IN

Standby

V

± 0.3V

X

H

X

V

± 0.3V

CC

X

High-Z

CC

Output Disable

Reset

L

H

L

X

Sector Address,

A6 = L, A1 = H,

A0 = L

Sector Protect (Note 2)

L

H

L

V

D

X

ID

IN

Sector Address,

A6 = H, A1 = H,

A0 = L

Sector Unprotect (Note 2)

L

H

X

L

V

D

X

ID

IN

Temporary Sector Unprotect

X

V

A

D

High-Z

IN

Legend

L = Logic Low = V

IL

H = Logic High = V

IH

V

= 12.0 ± 0.5 V

ID

X = Don’t Care

A

= Address In

= Data In

IN

D

IN

= Data Out

OUT

Notes

1. Addresses are A17:A0 in word mode (BYTE# = V ), A17:A-1 in byte mode (BYTE# = V ).

IH

IL

2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See Sector Protection/

Unprotection on page 14.

7.1

7.2

Word/Byte Configuration

The BYTE# pin controls whether the device data I/O pins DQ15–DQ0 operate in the byte or word

configuration. If the BYTE# pin is set at logic 1, the device is in word configuration, DQ15–DQ0 are active and

controlled by CE# and OE#.

If the BYTE# pin is set at logic 0, the device is in byte configuration, and only data I/O pins DQ0–DQ7 are

active and controlled by CE# and OE#. The data I/O pins DQ8–DQ14 are tri-stated, and the DQ15 pin is used

as an input for the LSB (A-1) address function.

Requirements for Reading Array Data

To read array data from the outputs, the system must drive the CE# and OE# pins to V_IL. CE# is the power

control and selects the device. OE# is the output control and gates array data to the output pins. WE# should

remain at V_IH. The BYTE# pin determines whether the device outputs array data in words or bytes.

The internal state machine is set for reading array data upon device power-up, or after a hardware reset. This

ensures that no spurious alteration of the memory content occurs during the power transition. No command is

necessary in this mode to obtain array data. Standard microprocessor read cycles that assert valid addresses

on the device address inputs produce valid data on the device data outputs. The device remains enabled for

read access until the command register contents are altered.

10

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See Reading Array Data on page 16 for more information. Refer to the AC Read Operations on page 31 for

timing specifications and to Figure 15.1 on page 31 for the timing diagram. I_CC1in DC Characteristics

on page 28 represents the active current specification for reading array data.

7.3

Writing Commands/Command Sequences

To write a command or command sequence (which includes programming data to the device and erasing

sectors of memory), the system must drive WE# and CE# to V_IL, and OE# to V_IH.

For program operations, the BYTE# pin determines whether the device accepts program data in bytes or

words. Refer to Word/Byte Configuration on page 10 for more information.

The device features an Unlock Bypass mode to facilitate faster programming. Once the device enters the

Unlock Bypass mode, only two write cycles are required to program a word or byte, instead of four. The Word/

Byte Program Command Sequence on page 17 has details on programming data to the device using both

standard and Unlock Bypass command sequences.

An erase operation can erase one sector, multiple sectors, or the entire device. Table 7.2 on page 12 and

Table 7.3 on page 13 indicate the address space that each sector occupies. A sector address consists of the

address bits required to uniquely select a sector. The Command Definitions on page 16 has details on

erasing a sector or the entire chip, or suspending/resuming the erase operation.

After the system writes the autoselect command sequence, the device enters the autoselect mode. The

system can then read autoselect codes from the internal register (which is separate from the memory array)

on DQ7–DQ0. Standard read cycle timings apply in this mode. Refer to Autoselect Mode on page 13 and

Autoselect Command Sequence on page 17 for more information.

I_CC2in DC Characteristics on page 28 represents the active current specification for the write mode. The AC

Characteristics on page 31 contains timing specification tables and timing diagrams for write operations.

7.4

7.5

Program and Erase Operation Status

During an erase or program operation, the system may check the status of the operation by reading the

status bits on DQ7–DQ0. Standard read cycle timings and I_CCread specifications apply. Refer to Write

Operation Status on page 22 for more information, and to AC Characteristics on page 31 for timing

diagrams.

Standby Mode

When the system is not reading or writing to the device, it can place the device in the standby mode. In this

mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state,

independent of the OE# input.

The device enters the CMOS standby mode when the CE# and RESET# pins are both held at V_CC± 0.3 V.

(Note that this is a more restricted voltage range than V_IH.) If CE# and RESET# are held at V_IH, but not within

V_CC± 0.3 V, the device is in the standby mode, but the standby current is greater. The device requires

standard access time (t_CE) for read access when the device is in either of these standby modes, before it is

ready to read data.

If the device is deselected during erasure or programming, the device draws active current until the operation

is completed.

In the DC Characteristics on page 28 table, I_CC3and I_CC4represents the standby current specification.

7.6

Automatic Sleep Mode

The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables

this mode when addresses remain stable for t_ACC+ 30 ns. The automatic sleep mode is independent of the

CE#, WE#, and OE# control signals. Standard address access timings provide new data when addresses are

changed. While in sleep mode, output data is latched and always available to the system. I_CC4in DC

Characteristics on page 28 represents the automatic sleep mode current specification.

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11

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7.7

RESET#: Hardware Reset Pin

The RESET# pin provides a hardware method of resetting the device to reading array data. When the

RESET# pin is driven low for at least a period of t_RP, the device immediately terminates any operation in

progress, tristates all output pins, and ignores all read/write commands for the duration of the RESET# pulse.

The device also resets the internal state machine to reading array data. The operation that was interrupted

should be reinitiated once the device is ready to accept another command sequence, to ensure data integrity.

Current is reduced for the duration of the RESET# pulse. When RESET# is held at V_SS0.3 V, the device

draws CMOS standby current (I_CC4). If RESET# is held at V_ILbut not within V_SS0.3 V, the standby current is

greater.

The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the Flash

memory, enabling the system to read the boot-up firmware from the Flash memory.

If RESET# is asserted during a program or erase operation, the RY/BY# pin remains a 0 (busy) until the

internal reset operation is complete, which requires a time of t_READY(during Embedded Algorithms). The

system can thus monitor RY/BY# to determine whether the reset operation is complete. If RESET# is

asserted when a program or erase operation is not executing (RY/BY# pin is 1), the reset operation is

completed within a time of t_READY(not during Embedded Algorithms). The system can read data t_RHafter the

RESET# pin returns to V_IH.

Refer to the tables in AC Characteristics on page 31 for RESET# parameters and to Figure 15.2 on page 32

for the timing diagram.

7.8

Output Disable Mode

When the OE# input is at V_IH, output from the device is disabled. The output pins are placed in the high

impedance state.

Table 7.2 S29AL004D Top Boot Block Sector Addresses

Address Range (in hexadecimal)

Sector Size

Sector

SA0

SA1

SA2

SA3

SA4

SA5

SA6

SA7

SA8

SA9

SA10

A17

0

A16

0

A15

0

A14

X

0

A13

X

A12

X

(Kbytes/Kwords)

64/32

32/16

8/4

(x8) Address Range

00000h–0FFFFh

10000h–1FFFFh

20000h–2FFFFh

30000h–3FFFFh

40000h–4FFFFh

50000h–5FFFFh

60000h–6FFFFh

70000h–7FFFFh

78000h–79FFFh

7A000h–7BFFFh

7C000h–7FFFFh

(x16) Address Range

00000h–07FFFh

08000h–0FFFFh

10000h–17FFFh

18000h–1FFFFh

20000h–27FFFh

28000h–2FFFFh

30000h–37FFFh

38000h–38FFFh

3C000h–3CFFFh

3D000h–3DFFFh

3E000h–3FFFFh

0

1

X

0

1

0

X

0

1

X

1

0

X

1

0

1

X

1

0

X

1

X

1

0

1

0

1

8/4

1

X

16/8

Note

The address range is A17:A-1 in byte mode and A17:A0 in word mode. See Word/Byte Configuration on page 10.

12

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Table 7.3 S29AL004D Bottom Boot Block Sector Addresses

Address Range (in hexadecimal)

Sector Size

(Kbytes/

(x8)

(x16)

Sector

SA0

SA1

SA2

SA3

SA4

SA5

SA6

SA7

SA8

SA9

SA10

A17

0

A16

0

A15

0

A14

0

A13

0

A12

X

Kwords)

Address Range

16/8

8/4

00000h–03FFFh

04000h–05FFFh

06000h–07FFFh

08000h–0FFFFh

10000h–1FFFFh

20000h–2FFFFh

30000h–3FFFFh

40000h–4FFFFh

50000h–5FFFFh

60000h–6FFFFh

70000h–7FFFFh

00000h–01FFFh

02000h–02FFFh

03000h–03FFFh

04000h–07FFFh

08000h–0FFFFh

10000h–17FFFh

18000h–1FFFFh

20000h–27FFFh

28000h–2FFFFh

30000h–37FFFh

38000h–3FFFFh

0

1

0

1

8/4

0

1

X

32/16

64/32

0

1

X

0

1

0

X

0

1

X

1

0

X

1

0

1

X

1

0

X

1

X

Note

The address range is A17:A-1 in byte mode and A17:A0 in word mode. See Word/Byte Configuration on page 10.

7.9

Autoselect Mode

The autoselect mode provides manufacturer and device identification, and sector protection verification,

through identifier codes output on DQ7–DQ0. This mode is primarily intended for programming equipment to

automatically match a device to be programmed with its corresponding programming algorithm. However, the

autoselect codes can also be accessed in-system through the command register.

When using programming equipment, the autoselect mode requires V_ID(11.5 V to 12.5 V) on address pin A9.

Address pins A6, A1, and A0 must be as shown in Table 7.4. In addition, when verifying sector protection, the

sector address must appear on the appropriate highest order address bits (see Table 7.2 on page 12 and

Table 7.3 on page 13). Table 7.4 on page 13 shows the remaining address bits that are don’t care. When all

necessary bits are set as required, the programming equipment may then read the corresponding identifier

code on DQ7–DQ0.

To access the autoselect codes in-system, the host system can issue the autoselect command via the

command register, as shown in Table 8.2 on page 20. This method does not require V_ID. See Command

Definitions on page 16 for details on using the autoselect mode.

Table 7.4 S29AL004D Autoselect Codes (High Voltage Method)

A11

to

DQ8

to

DQ7

to

A17

to

A8

to

A4

to

A3

to

Description

Mode CE#

OE# WE# A12 A10

A9

A7

A6

A5

A2

A1

A0

DQ15

DQ0

Manufacturer ID: Spansion

L

H

X

V

X

L

X

L

X

01h

B9h

ID

Device ID:

S29AL004D

(Top Boot Block)

Word

Byte

22h

X

V

L

H

ID

L

H

X

B9h

BAh

Device ID:

S29AL004D

(Bottom Boot

Block)

Word

22h

X

V

X

L

ID

Byte

L

H

X

BAh

01h

(protected)

X

Sector Protection

Verification

L

H

SA

L

H

L

00h

(unprotected)

Legend

L = Logic Low = V

IL

H = Logic High = V

IH

SA = Sector Address

X = Don’t care.

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13

D a t a S h e e t

7.10 Sector Protection/Unprotection

The hardware sector protection feature disables both program and erase operations in any sector. The

hardware sector unprotection feature re-enables both program and erase operations in previously protected

sectors.

The device is shipped with all sectors unprotected. Spansion offers the option of programming and protecting

sectors at its factory prior to shipping the device through Spansion’s ExpressFlash™ Service. Contact an

Spansion representative for details.

It is possible to determine whether a sector is protected or unprotected. See Autoselect Mode on page 13 for

details.

Sector Protection/unprotection can be implemented via two methods.

The primary method requires V_IDon the RESET# pin only, and can be implemented either in-system or via

programming equipment. Figure 7.2 on page 15 shows the algorithms and Figure 15.12 on page 38 shows

the timing diagram. This method uses standard microprocessor bus cycle timing. For sector unprotect, all

unprotected sectors must first be protected prior to the first sector unprotect write cycle.

The alternate method intended only for programming equipment requires V_IDon address pin A9 and OE#.

This method is compatible with programmer routines written for earlier 3.0 volt-only Spansion flash devices.

7.11 Temporary Sector Unprotect

This feature allows temporary unprotection of previously protected sectors to change data in-system. The

Sector Unprotect mode is activated by setting the RESET# pin to V_ID. During this mode, formerly protected

sectors can be programmed or erased by selecting the sector addresses. Once V_IDis removed from the

RESET# pin, all the previously protected sectors are protected again.

Figure 7.1 shows the algorithm and Figure 15.11 on page 38 shows the timing diagrams, for this feature.

Figure 7.1 Temporary Sector Unprotect Operation

START

RESET# = V_ID(Note 1)

Perform Erase or

Program Operations

RESET# = V_IH

Temporary Sector

Unprotect Completed

(Note 2)

Notes

1. All protected sectors unprotected.

2. All previously protected sectors are protected once again.

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Figure 7.2 In-System Sector Protect/Sector Unprotect Algorithms

START

Protect all sectors:

PLSCNT = 1

The indicated portion

of the sector protect

algorithm must be

performed for all

unprotected sectors

prior to issuing the

first sector

RESET# = V_ID

Wait 1 μs

unprotect address

No

First Write

Cycle = 60h?

First Write

Cycle = 60h?

Temporary Sector

Unprotect Mode

Temporary Sector

Unprotect Mode

Yes

Set up sector

address

No

All sectors

protected?

Sector Protect:

Yes

Write 60h to sector

address with

A6 = 0, A1 = 1,

A0 = 0

Set up first sector

address

Sector Unprotect:

Write 60h to sector

address with

Wait 150 μs

A6 = 1, A1 = 1,

A0 = 0

Verify Sector

Protect: Write 40h

to sector address

with A6 = 0,

Reset

PLSCNT = 1

Increment

PLSCNT

Wait 15 ms

A1 = 1, A0 = 0

Verify Sector

Unprotect: Write

40h to sector

address with

A6 = 1, A1 = 1,

A0 = 0

Read from

sector address

with A6 = 0,

A1 = 1, A0 = 0

Increment

PLSCNT

No

PLSCNT

= 25?

Read from

sector address

with A6 = 1,

A1 = 1, A0 = 0

Data = 01h?

Yes

No

Yes

Set up

next sector

address

Yes

No

PLSCNT

= 1000?

Protect another

sector?

Data = 00h?

Yes

Device failed

No

Yes

Remove V_ID

from RESET#

No

Last sector

verified?

Device failed

Write reset

command

Yes

Remove V_ID

from RESET#

Sector Unprotect

Algorithm

Sector Protect

Algorithm

Sector Protect

complete

Write reset

command

Sector Unprotect

complete

February 27, 2009 S29AL004D_00_A6

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15

D a t a S h e e t

7.12 Hardware Data Protection

The command sequence requirement of unlock cycles for programming or erasing provides data protection

against inadvertent writes (refer to Table 8.2 on page 20 for command definitions). In addition, the following

hardware data protection measures prevent accidental erasure or programming, which might otherwise be

caused by spurious system level signals during V_CCpower-up and power-down transitions, or from system

noise.

7.12.1

Low V_CCWrite Inhibit

When V_CCis less than V_LKO, the device does not accept any write cycles. This protects data during V_CC

power-up and power-down. The command register and all internal program/erase circuits are disabled, and

the device resets. Subsequent writes are ignored until V_CCis greater than V_LKO. The system must provide the

proper signals to the control pins to prevent unintentional writes when V_CCis greater than V_LKO

.

7.12.2

7.12.3

Write Pulse Glitch Protection

Noise pulses of less than 5 ns (typical) on OE#, CE# or WE# do not initiate a write cycle.

Logical Inhibit

Write cycles are inhibited by holding any one of OE# = V_IL, CE# = V_IHor WE# = V_IH. To initiate a write cycle,

CE# and WE# must be a logical zero while OE# is a logical one.

7.12.4

Power-Up Write Inhibit

If WE# = CE# = V_ILand OE# = V_IHduring power up, the device does not accept commands on the rising

edge of WE#. The internal state machine is automatically reset to reading array data on power-up.

8. Command Definitions

Writing specific address and data commands or sequences into the command register initiates device

operations. Figure 8.2 on page 20 defines the valid register command sequences. Writing incorrect

address and data values or writing them in the improper sequence resets the device to reading array data.

All addresses are latched on the falling edge of WE# or CE#, whichever happens later. All data is latched on

the rising edge of WE# or CE#, whichever happens first. Refer to the appropriate timing diagrams in AC

Characteristics on page 31.

8.1

Reading Array Data

The device is automatically set to reading array data after device power-up. No commands are required to

retrieve data. The device is also ready to read array data after completing an Embedded Program or

Embedded Erase algorithm.

After the device accepts an Erase Suspend command, the device enters the Erase Suspend mode. The

system can read array data using the standard read timings, except that if it reads at an address within erase-

suspended sectors, the device outputs status data. After completing a programming operation in the Erase

Suspend mode, the system may once again read array data with the same exception. See Erase Suspend/

Erase Resume Commands on page 20 for more information on this mode.

The system must issue the reset command to re-enable the device for reading array data if DQ5 goes high, or

while in the autoselect mode. See Reset Command on page 17.

See also Requirements for Reading Array Data on page 10 for more information. The Read Operations

on page 31 provides the read parameters, and Figure 15.1 on page 31 shows the timing diagram.

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8.2

Reset Command

Writing the reset command to the device resets the device to reading array data. Address bits are don’t care

for this command.

The reset command may be written between the sequence cycles in an erase command sequence before

erasing begins. This resets the device to reading array data. Once erasure begins, however, the device

ignores reset commands until the operation is complete.

The reset command may be written between the sequence cycles in a program command sequence before

programming begins. This resets the device to reading array data (also applies to programming in Erase

Suspend mode). Once programming begins, however, the device ignores reset commands until the operation

is complete.

The reset command may be written between the sequence cycles in an autoselect command sequence.

Once in the autoselect mode, the reset command must be written to return to reading array data (also applies

to autoselect during Erase Suspend).

If DQ5 goes high during a program or erase operation, writing the reset command returns the device to

reading array data (also applies during Erase Suspend).

8.3

Autoselect Command Sequence

The autoselect command sequence allows the host system to access the manufacturer and devices codes,

and determine whether or not a sector is protected. Table 8.2 on page 20 shows the address and data

requirements. This method is an alternative to that shown in Table 7.4 on page 13, which is intended for

PROM programmers and requires V_IDon address bit A9.

The autoselect command sequence is initiated by writing two unlock cycles, followed by the autoselect

command. The device then enters the autoselect mode, and the system may read at any address any

number of times, without initiating another command sequence.

A read cycle at address XX00h retrieves the manufacturer code. A read cycle at address XX01h in word

mode (or 02h in byte mode) returns the device code. A read cycle containing a sector address (SA) and the

address 02h in word mode (or 04h in byte mode) returns 01h if that sector is protected, or 00h if it is

unprotected. Refer to Table 7.2 on page 12 and Table 7.3 on page 13 for valid sector addresses.

The system must write the reset command to exit the autoselect mode and return to reading array data.

8.4

Word/Byte Program Command Sequence

The system may program the device by word or byte, depending on the state of the BYTE# pin. Programming

is a four-bus-cycle operation. The program command sequence is initiated by writing two unlock write cycles,

followed by the program set-up command. The program address and data are written next, which in turn

initiate the Embedded Program algorithm. The system is not required to provide further controls or timings.

The device automatically provides internally generated program pulses and verifies the programmed cell

margin. Table 8.2 on page 20 shows the address and data requirements for the byte program command

sequence.

When the Embedded Program algorithm is complete, the device then returns to reading array data and

addresses are no longer latched. The system can determine the status of the program operation by using

DQ7, DQ6, or RY/BY#. See Write Operation Status on page 22 for information on these status bits.

Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a

hardware reset immediately terminates the programming operation. The program command sequence

should be reinitiated once the device has reset to reading array data, to ensure data integrity.

Programming is allowed in any sequence and across sector boundaries. A bit cannot be programmed from

a 0 back to a 1. Attempting to do so may halt the operation and set DQ5 to 1, or cause the Data# Polling

algorithm to indicate the operation was successful. However, a succeeding read shows that the data is still 0.

Only erase operations can convert a 0 to a 1.

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D a t a S h e e t

8.4.1

Unlock Bypass Command Sequence

The unlock bypass feature allows the system to program bytes or words to the device faster than using the

standard program command sequence. The unlock bypass command sequence is initiated by first writing two

unlock cycles. This is followed by a third write cycle containing the unlock bypass command, 20h. The device

then enters the unlock bypass mode. A two-cycle unlock bypass program command sequence is all that is

required to program in this mode. The first cycle in this sequence contains the unlock bypass program

command, A0h; the second cycle contains the program address and data. Additional data is programmed in

the same manner. This mode dispenses with the initial two unlock cycles required in the standard program

command sequence, resulting in faster total programming time. Table 8.2 on page 20 shows the

requirements for the command sequence.

During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset commands are

valid. To exit the unlock bypass mode, the system must issue the two-cycle unlock bypass reset command

sequence. The first cycle must contain the data 90h; the second cycle the data 00h (F0h). Addresses are

don’t care for both cycles. The device then returns to reading array data.

Figure 8.1 illustrates the algorithm for the program operation. See Table 15.3 on page 33 for parameters, and

Figure 15.5 on page 35 for timing diagrams.

Figure 8.1 Program Operation

START

Write Program

Command Sequence

Data Poll

from System

Embedded

Program

algorithm

in progress

Verify Data?

No

Yes

No

Increment Address

Last Address?

Yes

Programming

Completed

Note

See Table 8.1 on page 21 for program command sequence.

18

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8.5

Chip Erase Command Sequence

Chip erase is a six bus cycle operation. The chip erase command sequence is initiated by writing two unlock

cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the chip erase

command, which in turn invokes the Embedded Erase algorithm. The device does not require the system to

preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire

memory for an all zero data pattern prior to electrical erase. The system is not required to provide any

controls or timings during these operations. Table 8.2 on page 20 shows the address and data requirements

for the chip erase command sequence.

Any commands written to the chip during the Embedded Erase algorithm are ignored. Note that a hardware

reset during the chip erase operation immediately terminates the operation. The Chip Erase command

sequence should be reinitiated once the device has returned to reading array data, to ensure data integrity.

The system can determine the status of the erase operation by using DQ7, DQ6, DQ2, or RY/BY#. See Write

Operation Status on page 22 for information on these status bits. When the Embedded Erase algorithm is

complete, the device returns to reading array data and addresses are no longer latched.

Figure 8.2 on page 20 illustrates the algorithm for the erase operation. See Table 15.3 on page 33 for

parameters and Figure 15.6 on page 35 for timing diagrams.

8.6

Sector Erase Command Sequence

Sector erase is a six bus cycle operation. The sector erase command sequence is initiated by writing two

unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the

address of the sector to be erased, and the sector erase command. Table 8.2 on page 20 shows the address

and data requirements for the sector erase command sequence.

The device does not require the system to preprogram the memory prior to erase. The Embedded Erase

algorithm automatically programs and verifies the sector for an all zero data pattern prior to electrical erase.

The system is not required to provide any controls or timings during these operations.

After the command sequence is written, a sector erase time-out of 50 µs begins. During the time-out period,

additional sector addresses and sector erase commands may be written. Loading the sector erase buffer may

be done in any sequence, and the number of sectors may be from one sector to all sectors. The time between

these additional cycles must be less than 50 µs, otherwise the last address and command might not be

accepted, and erasure may begin. It is recommended that processor interrupts be disabled during this time to

ensure all commands are accepted. The interrupts can be re-enabled after the last Sector Erase command is

written. If the time between additional sector erase commands can be assumed to be less than 50 µs, the

system need not monitor DQ3. Any command other than Sector Erase or Erase Suspend during the

time-out period resets the device to reading array data. The system must rewrite the command sequence

and any additional sector addresses and commands.

The system can monitor DQ3 to determine if the sector erase timer has timed out. (See DQ3: Sector Erase

Timer on page 25). The time-out begins from the rising edge of the final WE# pulse in the command

sequence.

Once the sector erase operation has begun, only the Erase Suspend command is valid. All other commands

are ignored. Note that a hardware reset during the sector erase operation immediately terminates the

operation. The Sector Erase command sequence should be reinitiated once the device has returned to

reading array data, to ensure data integrity.

When the Embedded Erase algorithm is complete, the device returns to reading array data and addresses

are no longer latched. The system can determine the status of the erase operation by using DQ7, DQ6, DQ2,

or RY/BY#. Refer to Write Operation Status on page 22 for information on these status bits.

Figure 8.2 on page 20 illustrates the algorithm for the erase operation. Refer to Table 15.3 on page 33 for

parameters, and to Figure 15.6 on page 35 for timing diagrams.

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D a t a S h e e t

8.7

Erase Suspend/Erase Resume Commands

The Erase Suspend command allows the system to interrupt a sector erase operation and then read data

from, or program data to, any sector not selected for erasure. This command is valid only during the sector

erase operation, including the 50 µs time-out period during the sector erase command sequence. The Erase

Suspend command is ignored if written during the chip erase operation or Embedded Program algorithm.

Writing the Erase Suspend command during the Sector Erase time-out immediately terminates the time-out

period and suspends the erase operation. Addresses are don’t-cares when writing the Erase Suspend

command.

When the Erase Suspend command is written during a sector erase operation, the device requires a

maximum of 20 µs to suspend the erase operation. However, when the Erase Suspend command is written

during the sector erase time-out, the device immediately terminates the time-out period and suspends the

erase operation.

After the erase operation is suspended, the system can read array data from or program data to any sector

not selected for erasure. (The device erase suspends all sectors selected for erasure.) Normal read and write

timings and command definitions apply. Reading at any address within erase-suspended sectors produces

status data on DQ7–DQ0. The system can use DQ7, or DQ6 and DQ2 together, to determine if a sector is

actively erasing or is erase-suspended. See Write Operation Status on page 22 for information on these

status bits.

After an erase-suspended program operation is complete, the system can once again read array data within

non-suspended sectors. The system can determine the status of the program operation using the DQ7 or

DQ6 status bits, just as in the standard program operation. See Write Operation Status on page 22 for more

information.

The system may also write the autoselect command sequence when the device is in the Erase Suspend

mode. The device allows reading autoselect codes even at addresses within erasing sectors, since the codes

are not stored in the memory array. When the device exits the autoselect mode, the device reverts to the

Erase Suspend mode, and is ready for another valid operation. See Autoselect Command Sequence

on page 17 for more information.

The system must write the Erase Resume command (address bits are don’t care) to exit the erase suspend

mode and continue the sector erase operation. Further writes of the Resume command are ignored. Another

Erase Suspend command can be written after the device has resumed erasing.

Figure 8.2 Erase Operation

START

Write Erase

Command Sequence

Data Poll

from System

Embedded

Erase

algorithm

in progress

No

Data = FFh?

Yes

Erasure Completed

Notes

1. See Sector Erase Command Sequence on page 19 for erase command sequence.

2. See DQ3: Sector Erase Timer on page 25 for more information.

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Table 8.1 S29AL004D Command Definitions

Bus Cycles (Notes 2-5)

Third Fourth

Addr Addr

Command

Sequence

(Note 1)

First

Addr

Second

Fifth

Sixth

Addr

Data

RD

Addr

Data

Addr

Data

Read (Note 6)

Reset (Note 7)

1

RA

XXX

555

F0

Word

Byte

Word

Byte

Word

Byte

2AA

555

2AA

555

2AA

555

AAA

555

Manufacturer ID

4

AA

55

90

X00

01

AAA

555

X01

X02

X01

X02

22B9

B9

Device ID,

Top Boot Block

AAA

555

AAA

555

22BA

BA

Device ID,

Bottom Boot Block

AAA

XX00

XX01

00

Word

Byte

555

2AA

555

(SA)X02

(SA)X04

PA

Sector Protect Verify

(Note 9)

4

AA

55

90

AAA

01

Word

Byte

Word

Byte

555

AAA

555

2AA

555

2AA

555

PA

555

AAA

555

Program

4

3

AA

A0

20

PD

Unlock Bypass

55

AAA

XXX

AAA

Unlock Bypass Program (Note 10)

Unlock Bypass Reset (Note 11)

2

A0

90

PD

00

(F0h)

XXX

Word

Byte

Word

Byte

555

AAA

555

2AA

555

2AA

555

AAA

555

AAA

555

2AA

555

2AA

555

Chip Erase

6

AA

55

80

AA

55

10

30

AAA

Sector Erase

SA

AAA

XXX

AAA

Erase Suspend (Note 12)

Erase Resume (Note 13)

1

B0

30

Legend

X = Don’t care

RA = Address of the memory location to be read

RD = Data read from location RA during read operation, and

PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the WE# or CE# pulse, whichever happens later.

PD = Data to be programmed at location PA. Data latches on the rising edge of WE# or CE# pulse, whichever happens first.

SA = Address of the sector to be verified (in autoselect mode) or erased. Address bits A17–A12 uniquely select any sector.

Notes

1. See Table 7.1 on page 10 for description of bus operations.

2. All values are in hexadecimal.

3. Except when reading array or autoselect data, all bus cycles are write operations.

4. Data bits DQ15–DQ8 are don’t cares for unlock and command cycles.

5. Address bits A17–A11 are don’t cares for unlock and command cycles, unless PA or SA required.

6. No unlock or command cycles required when reading array data.

7. The Reset command is required to return to reading array data when device is in the autoselect mode, or if DQ5 goes high (while the device is providing status

data).

8. The fourth cycle of the autoselect command sequence is a read cycle.

9. The data is 00h for an unprotected sector and 01h for a protected sector. See Autoselect Command Sequence on page 17 for more information.

10. The Unlock Bypass command is required prior to the Unlock Bypass Program command.

11. The Unlock Bypass Reset command is required to return to reading array data when the device is in the unlock bypass mode.

12. The system may read and program in non-erasing sectors, or enter the autoselect mode, when in the Erase Suspend mode. The Erase Suspend command is

valid only during a sector erase operation.

13. The Erase Resume command is valid only during the Erase Suspend mode.

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D a t a S h e e t

9. Write Operation Status

The device provides several bits to determine the status of a write operation: DQ2, DQ3, DQ5, DQ6, DQ7,

and RY/BY#. Table 9.1 on page 26 and the following subsections describe the functions of these bits. DQ7,

RY/BY#, and DQ6 each offer a method for determining whether a program or erase operation is complete or

in progress. These three bits are discussed first.

9.1

DQ7: Data# Polling

The Data# Polling bit, DQ7, indicates to the host system whether an Embedded Algorithm is in progress or

completed, or whether the device is in Erase Suspend. Data# Polling is valid after the rising edge of the final

WE# pulse in the program or erase command sequence.

During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum

programmed to DQ7. This DQ7 status also applies to programming during Erase Suspend. When the

Embedded Program algorithm is complete, the device outputs the datum programmed to DQ7. The system

must provide the program address to read valid status information on DQ7. If a program address falls within a

protected sector, Data# Polling on DQ7 is active for approximately 1 µs, then the device returns to reading

array data.

During the Embedded Erase algorithm, Data# Polling produces a 0 on DQ7. When the Embedded Erase

algorithm is complete, or if the device enters the Erase Suspend mode, Data# Polling produces a 1 on DQ7.

This is analogous to the complement/true datum output described for the Embedded Program algorithm: the

erase function changes all the bits in a sector to 1; prior to this, the device outputs the complement, or 0. The

system must provide an address within any of the sectors selected for erasure to read valid status information

on DQ7.

After an erase command sequence is written, if all sectors selected for erasing are protected, Data# Polling

on DQ7 is active for approximately 100 µs, then the device returns to reading array data. If not all selected

sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the

selected sectors that are protected.

When the system detects DQ7 has changed from the complement to true data, it can read valid data at DQ7–

DQ0 on the following read cycles. This is because DQ7 may change asynchronously with DQ0–DQ6 while

Output Enable (OE#) is asserted low. Figure 15.8 on page 36 illustrates this.

Table 9.1 on page 26 shows the outputs for Data# Polling on DQ7. Figure 9.1 on page 23 shows the Data#

Polling algorithm.

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Figure 9.1 Data# Polling Algorithm

START

Read DQ7–DQ0

Addr = VA

Yes

DQ7 = Data?

No

DQ5 = 1?

Yes

Read DQ7–DQ0

Addr = VA

Yes

DQ7 = Data?

No

PASS

FAIL

Notes

1. VA = Valid address for programming. During a sector erase operation, a valid address is an address within any sector selected for

erasure. During chip erase, a valid address is any non-protected sector address.

2. DQ7 should be rechecked even if DQ5 = 1 because DQ7 may change simultaneously with DQ5.

9.2

RY/BY#: Ready/Busy#

The RY/BY# is a dedicated, open-drain output pin that indicates whether an Embedded Algorithm is in

progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command

sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a

pull-up resistor to V_CC

.

If the output is low (Busy), the device is actively erasing or programming. (This includes programming in the

Erase Suspend mode.) If the output is high (Ready), the device is ready to read array data (including during

the Erase Suspend mode), or is in the standby mode.

Table 9.1 on page 26 shows the outputs for RY/BY#. Figure 15.1 on page 31, Figure 15.2 on page 32,

Figure 15.5 on page 35, and Figure 15.6 on page 35 shows RY/BY# for read, reset, program, and erase

operations, respectively.

9.3

DQ6: Toggle Bit I

Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress or complete,

or whether the device has entered the Erase Suspend mode. Toggle Bit I may be read at any address, and is

valid after the rising edge of the final WE# pulse in the command sequence (prior to the program or erase

operation), and during the sector erase time-out.

During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause

DQ6 to toggle. (The system may use either OE# or CE# to control the read cycles.) When the operation is

complete, DQ6 stops toggling.

After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6 toggles for

approximately 100 µs, then returns to reading array data. If not all selected sectors are protected, the

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D a t a S h e e t

Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are

protected.

The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is erase-

suspended. When the device is actively erasing (that is, the Embedded Erase algorithm is in progress), DQ6

toggles. When the device enters the Erase Suspend mode, DQ6 stops toggling. However, the system must

also use DQ2 to determine which sectors are erasing or erase-suspended. Alternatively, the system can use

DQ7 (see DQ7: Data# Polling on page 22).

If a program address falls within a protected sector, DQ6 toggles for approximately 1 µs after the program

command sequence is written, then returns to reading array data.

DQ6 also toggles during the erase-suspend-program mode, and stops toggling once the Embedded Program

algorithm is complete.

Table 9.1 on page 26 shows the outputs for Toggle Bit I on DQ6. Figure 9.2 on page 25 shows the toggle bit

algorithm. Figure 15.9 on page 37 shows the toggle bit timing diagrams. Figure 15.10 on page 37 shows the

differences between DQ2 and DQ6 in graphical form. See also DQ2: Toggle Bit II on page 24.

9.4

DQ2: Toggle Bit II

The Toggle Bit II on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing (that

is, the Embedded Erase algorithm is in progress), or whether that sector is erase-suspended. Toggle Bit II is

valid after the rising edge of the final WE# pulse in the command sequence.

DQ2 toggles when the system reads at addresses within those sectors that are selected for erasure. (The

system may use either OE# or CE# to control the read cycles.) But DQ2 cannot distinguish whether the

sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates whether the device is

actively erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected for erasure. Thus,

both status bits are required for sector and mode information. Refer to Table 9.1 on page 26 to compare

outputs for DQ2 and DQ6.

Figure 9.2 on page 25 shows the toggle bit algorithm in flowchart form, and the section DQ2: Toggle Bit II

on page 24 explains the algorithm. See also the DQ6: Toggle Bit I on page 23 subsection. Figure 15.9

on page 37 shows the toggle bit timing diagram. Figure 15.10 on page 37 shows the differences between

DQ2 and DQ6 in graphical form.

9.5

Reading Toggle Bits DQ6/DQ2

Refer to Figure 9.2 on page 25 for the following discussion. Whenever the system initially begins reading

toggle bit status, it must read DQ7–DQ0 at least twice in a row to determine whether a toggle bit is toggling.

Typically, the system would note and store the value of the toggle bit after the first read. After the second

read, the system would compare the new value of the toggle bit with the first. If the toggle bit is not toggling,

the device has completed the program or erase operation. The system can read array data on DQ7–DQ0 on

the following read cycle.

However, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the

system also should note whether the value of DQ5 is high (see DQ5: Exceeded Timing Limits on page 25). If

it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have

stopped toggling just as DQ5 went high. If the toggle bit is no longer toggling, the device has successfully

completed the program or erase operation. If it is still toggling, the device did not completed the operation

successfully, and the system must write the reset command to return to reading array data.

The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has not

gone high. The system may continue to monitor the toggle bit and DQ5 through successive read cycles,

determining the status as described in the previous paragraph. Alternatively, it may choose to perform other

system tasks. In this case, the system must start at the beginning of the algorithm when it returns to

determine the status of the operation (top of Figure 9.2 on page 25)

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9.6

9.7

DQ5: Exceeded Timing Limits

DQ5 indicates whether the program or erase time has exceeded a specified internal pulse count limit. Under

these conditions DQ5 produces a 1. This is a failure condition that indicates the program or erase cycle was

not successfully completed.

The DQ5 failure condition may appear if the system tries to program a 1 to a location that is previously

programmed to 0. Only an erase operation can change a 0 back to a 1. Under this condition, the device

halts the operation, and when the operation has exceeded the timing limits, DQ5 produces a 1.

Under both these conditions, the system must issue the reset command to return the device to reading array

data.

DQ3: Sector Erase Timer

After writing a sector erase command sequence, the system may read DQ3 to determine whether or not an

erase operation has begun. (The sector erase timer does not apply to the chip erase command.) If additional

sectors are selected for erasure, the entire time-out also applies after each additional sector erase command.

When the time-out is complete, DQ3 switches from 0 to 1. The system may ignore DQ3 if the system can

guarantee that the time between additional sector erase commands is always less than 50 µs. See also the

Sector Erase Command Sequence on page 19.

Figure 9.2 Toggle Bit Algorithm

START

Read DQ7–DQ0

(Note 1)

Read DQ7–DQ0

No

Toggle Bit

= Toggle?

Yes

No

DQ5 = 1?

Yes

Read DQ7–DQ0

Twice

(Notes 1, 2)

Toggle Bit

= Toggle?

No

Yes

Program/Erase

Operation Not

Program/Erase

Complete, Write

Reset Command

Operation Complete

Notes

1. Read toggle bit twice to determine whether or not it is toggling. See text.

2. Recheck toggle bit because it may stop toggling as DQ5 changes to 1. See text.

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D a t a S h e e t

After the sector erase command sequence is written, the system should read the status on DQ7 (Data#

Polling) or DQ6 (Toggle Bit I) to ensure the device has accepted the command sequence, and then read

DQ3. If DQ3 is 1, the internally controlled erase cycle has begun; all further commands (other than Erase

Suspend) are ignored until the erase operation is complete. If DQ3 is 0, the device accepts additional sector

erase commands. To ensure the command is accepted, the system software should check the status of DQ3

prior to and following each subsequent sector erase command. If DQ3 is high on the second status check, the

last command might not have been accepted. Table 9.1 shows the outputs for DQ3.

Table 9.1 Write Operation Status

DQ7

DQ5

DQ2

Operation

(Note 2)

DQ6

(Note 1)

DQ3

N/A

1

(Note 2)

RY/BY#

Embedded Program Algorithm

Embedded Erase Algorithm

DQ7#

0

Toggle

0

No toggle

Toggle

0

Standard

Mode

Reading within Erase

Suspended Sector

1

No toggle

0

N/A

Toggle

1

Erase

Suspend

Mode

Reading within Non-Erase

Suspended Sector

Data

0

Data

N/A

Data

N/A

1

0

Erase-Suspend-Program

DQ7#

Toggle

Notes

1. DQ5 switches to 1 when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits. See DQ5:

Exceeded Timing Limits on page 25 for more information.

2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.

10. Absolute Maximum Ratings

Storage Temperature Plastic Packages

–65°C to +150°C

–65°C to +125°C

Ambient Temperature with Power Applied

Voltage with Respect to Ground V_CC(Note 1)–0.5 V to +4.0 V

A9, OE#, and RESET# (Note 2)

–0.5 V to +12.5 V

–0.5 V to V_CC+0.5 V

200 mA

All other pins (Note 1)

Output Short Circuit Current (Note 3)

Notes

1. Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions, input or I/O pins may undershoot V to –2.0 V for periods

SS

of up to 20 ns. See Figure 11.1 on page 27. Maximum DC voltage on input or I/O pins is V +0.5 V. During voltage transitions, input or

CC

I/O pins may overshoot to V +2.0 V for periods up to 20 ns. See Figure 11.2 on page 27.

CC

2. Minimum DC input voltage on pins A9, OE#, and RESET# is –0.5 V. During voltage transitions, A9, OE#, and RESET# may undershoot

V

to –2.0 V for periods of up to 20 ns. See Figure 11.1 on page 27. Maximum DC input voltage on pin A9 is +12.5 V which may

SS

overshoot to 14.0 V for periods up to 20 ns.

3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second.

4. Stresses above those listed under Absolute Maximum Ratings on page 26 may cause permanent damage to the device. This is a stress

rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this

data sheet is not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability.

11. Operating Ranges

Industrial (I) Devices

Ambient Temperature (T_A)

-40°C to +85°C

-40°C to +125°C

+2.7 V to +3.6 V

Extended (N) Devices

Ambient Temperature (T_A)

V

Supply Voltages

CC

V_CCfor full voltage range

Operating ranges define those limits between which the functionality of the device is guaranteed.

26

S29AL004D

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D a t a S h e e t

Figure 11.1 Maximum Negative Overshoot Waveform

20 ns

+0.8 V

–0.5 V

–2.0 V

20 ns

Figure 11.2 Maximum Positive Overshoot Waveform

20 ns

V_CC

+2.0 V

V_CC

+0.5 V

2.0 V

20 ns

February 27, 2009 S29AL004D_00_A6

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D a t a S h e e t

12. DC Characteristics

Parameter

Description

Test Conditions

Min

Typ

Max

±1.0

35

Unit

µA

V

= V to V

,

CC

IN

SS

I

Input Load Current

LI

= V

CC

CC max

I

A9 Input Load Current

Output Leakage Current

V

= V

; A9 = 12.5 V

µA

LIT

CC

CC max

V

= V to V

SS

,

CC

OUT

I

±1.0

µA

LO

= V

CC

CC max

10 MHz

5 MHz

1 MHz

10 MHz

5 MHz

1 MHz

18

9

35

16

4

CE# = V OE#

IL,

Byte Mode

V

=

IH,

2

V

Active Read Current

CC

I

mA

CC1

CC2

(Notes 1, 2)

15

9

30

16

4

CE# = V OE#

IL,

Word Mode

V

=

IH,

2

V

Active Write Current

CC

CE# = V OE#

20

35

IL,

IH

(Notes 2, 3, 6)

I

V

Standby Current (Notes 2, 4)

Reset Current (Notes 2, 4)

CE#, RESET# = V ±0.3 V

0.2

5

µA

CC3

CC4

CC

RESET# = V ± 0.3 V

SS

Automatic Sleep Mode

(Notes 2, 4, 5)

V

= V ± 0.3 V;

CC

IH

IL

I

0.2

5

µA

CC5

= V ± 0.3 V

SS

V

Input Low Voltage

Input High Voltage

–0.5

0.8

V

IL

V

0.7 x V

V

+ 0.3

CC

IH

CC

Voltage for Autoselect and

Temporary Sector Unprotect

V

= 3.3 V

11.5

2.4

12.5

0.45

V

ID

CC

V

Output Low Voltage

I

= 4.0 mA, V = V

CC min

V

OL

OH

CC

V

= –2.0 mA, V = V

CC CC min

OH1

OH2

Output High Voltage

V

= –100 µA, V = V

V

–0.4

CC

CC min

V

Low V Lock-Out Voltage

2.3

2.5

V

LKO

CC

Notes

1. The I current listed is typically less than 2 mA/MHz, with OE# at V . Typical V is 3.0 V.

CC

IH

CC

2. Maximum I specifications are tested with V = V .

CCmax

CC

3.

I

active while Embedded Erase or Embedded Program is in progress.

CC

4. At extended temperature range (>+85°C), typical current is 5µA and maximum current is 10µA.

5. Automatic sleep mode enables the low power mode when addresses remain stable for t

6. Not 100% tested.

+ 30 ns.

ACC

28

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12.1 Zero Power Flash

Figure 12.1 I_CC1Current vs. Time (Showing Active and Automatic Sleep Currents)

20

15

10

5

0

500

1000

1500

2000

2500

3000

3500

4000

Time in ns

Note

Addresses are switching at 1 MHz.

Figure 12.2 Typical I_CC1vs. Frequency

10

8

3.6 V

6

2.7 V

4

2

0

1

2

3

4

5

Frequency in MHz

Note

T = 25 °C

February 27, 2009 S29AL004D_00_A6

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13. Test Conditions

Figure 13.1 Test Setup

3.3 V

2.7 kΩ

Device

Under

Test

C

6.2 kΩ

L

Note

Nodes are IN3064 or equivalent.

Table 13.1 Test Specifications

Test Condition

55

70

90

Unit

Output Load

1 TTL gate

Output Load Capacitance, C

L

30

100

pF

ns

(including jig capacitance)

Input Rise and Fall Times

Input Pulse Levels

5

0.0 or V

CC

Input timing measurement reference levels

Output timing measurement reference levels

0.5V

V

CC

14. Key to Switching Waveforms

Waveform

Inputs

Outputs

Steady

Changing from H to L

Changing from L to H

Don’t Care, Any Change Permitted

Changing, State Unknown

Does Not Apply

Center Line is High Impedance State (High Z)

Figure 14.1 Input Waveforms and Measurement Levels

V

CC

0.0 V

0.5V

Input

Measurement Level

Output

0.5V

CC

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15. AC Characteristics

15.1 Read Operations

Parameter

Table 15.1 Read Operations

Speed Options

JEDEC

Std

Description

Read Cycle Time (Note 1)

Test Setup

55

70

90

Unit

t

Min

55

70

90

AVAV

RC

CE# = V

OE# = V

IL

t

Address to Output Delay

Max

55

70

90

AVQV

ACC

t

Chip Enable to Output Delay

OE# = V

Max

Min

55

25

70

30

16

20

0

90

35

ELQV

GLQV

EHQZ

CE

IL

t

Output Enable to Output Delay

OE

t

Chip Enable to Output High Z (Note 1)

Output Enable to Output High Z (Note 1)

Latency Between Read and Write Operations

DF

ns

t

GHQZ

t

SR/W

Read

Output Enable

Hold Time (Note 1)

t

OEH

Toggle and Data# Polling

10

Output Hold Time From Addresses, CE# or OE#,

Whichever Occurs First (Note 1)

t

Min

0

AXQX

OH

Notes

1. Not 100% tested.

2. See Figure 13.1 on page 30 and Table 13.1 on page 30 for test specifications.

Figure 15.1 Read Operations Timings

t

RC

Addresses Stable

Addresses

CE#

t

ACC

t

DF

t

OE

OE#

t

SR/W

t

OEH

WE#

t

CE

t

OH

HIGH Z

Output Valid

Outputs

RESET#

RY/BY#

0 V

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Table 15.2 Hardware Reset (RESET#)

Parameter

JEDEC Std

Description

Test Setup

All Speed Options

Unit

RESET# Pin Low (During Embedded Algorithms) to

Read or Write (See Note)

t

20

µs

READY

Max

RESET# Pin Low (NOT During Embedded

Algorithms) to Read or Write (See Note)

t

500

ns

t

RESET# Pulse Width

500

50

20

0

ns

µs

ns

RP

t

RESET# High Time Before Read (See Note)

RESET# Low to Standby Mode

RY/BY# Recovery Time

RH

Min

t

RPD

t

RB

Note

Not 100% tested.

Figure 15.2 RESET# Timings

RY/BY#

CE#, OE#

RESET#

t_RH

t_RP

t_Ready

Reset Timings NOT during Embedded Algorithms

Reset Timings during Embedded Algorithms

t_Ready

RY/BY#

t_RB

CE#, OE#

RESET#

t

RH

t_RP

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Table 15.3 Word/Byte Configuration (BYTE#)

Parameter

JEDEC Std

Speed Options

Description

55

70

5

90

Unit

t

CE# to BYTE# Switching Low or High

BYTE# Switching Low to Output HIGH Z

BYTE# Switching High to Output Active

Max

Min

ELFL/ ELFH

t

16

70

ns

FLQZ

t

55

90

FHQV

Figure 15.3 BYTE# Timings for Read Operations

CE#

OE#

BYTE#

DQ0–DQ14

DQ15/A-1

t_ELFL

Data Output

(DQ0–DQ14)

Data Output

(DQ0–DQ7)

BYTE#

Switching

from word

to byte

mode

Address

Input

DQ15

Output

t_FLQZ

t_ELFH

BYTE#

Switching

from byte to

word mode

Data Output

(DQ0–DQ7)

Data Output

(DQ0–DQ14)

DQ0–DQ14

DQ15/A-1

Address

Input

DQ15

Output

t_FHQV

Figure 15.4 BYTE# Timings for Write Operations

CE#

The falling edge of the last WE# signal

WE#

BYTE#

t_SET

(t_AS

)

t_HOLD(t_AH

)

Note

Refer to Erase/Program Operations on page 34 for t and t specifications.

AS

AH

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15.2 Erase/Program Operations

Parameter

Speed Options

JEDEC

Std

Description

55

70

0

90

Unit

t

Write Cycle Time (Note 1)

Address Setup Time

Address Hold Time

Data Setup Time

55

90

AVAV

WC

t

AVWL

WLAX

DVWH

WHDX

AS

AH

DS

DH

t

45

35

0

t

35

45

t

Data Hold Time

t

Output Enable Setup Time

0

OES

Min

ns

Read Recovery Time Before Write

(OE# High to WE# Low)

t

0

GHWL

t

CE# Setup Time

0

ELWL

WHEH

WLWH

WHWL

CS

CH

WP

t

CE# Hold Time

t

Write Pulse Width

35

30

20

5

t

Write Pulse Width High

Latency Between Read and Write Operations

WPH

t

Min

Typ

ns

µs

SR/W

Byte

t

Programming Operation (Note 2)

Sector Erase Operation (Note 2)

WHWH1

Word

7

0.7

50

0

sec

µs

WHWH2

t

V

Setup Time (Note 1)

Min

Max

VCS

CC

t

Recovery Time from RY/BY#

RB

ns

t

Program/Erase Valid to RY/BY# Delay

90

BUSY

Notes

1. Not 100% tested.

2. See the Sector Erase Command Sequence on page 19 section for more information.

34

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Figure 15.5 Program Operation Timings

Program Command Sequence (last two cycles)

Read Status Data (last two cycles)

t_AS

PA

t_WC

Addresses

555h

PA

t_AH

CE#

OE#

t_CH

t_WHWH1

t_WP

WE#

Data

t_WPH

t_CS

t_DS

t_DH

PD

D_OUT

A0h

Status

t_BUSY

t_RB

RY/BY#

V_CC

t_VCS

Notes

1. PA = program address, PD = program data, D

is the true data at the program address.

OUT

2. Illustration shows device in word mode.

Figure 15.6 Chip/Sector Erase Operation Timings

Erase Command Sequence (last two cycles)

Read Status Data

VA

t_AS

SA

t_WC

Addresses

CE#

2AAh

555h for chip erase

t_AH

t_CH

OE#

t_WP

WE#

t_WPH

t_WHWH2

t_CS

t_DS

t_DH

In

Data

Complete

55h

30h

Progress

10 for Chip Erase

t_BUSY

t_RB

RY/BY#

V_CC

t_VCS

Notes

1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see Write Operation Status on page 22).

2. Illustration shows device in word mode.

February 27, 2009 S29AL004D_00_A6

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D a t a S h e e t

Figure 15.7 Back to Back Read/Write Cycle Timing

t

WC

RC

Addresses

PA

t

ACC

t

AH

CPH

t

CE

CE#

OE#

t

CP

t

OE

t

GHWL

t

SR/W

t

WP

t

WE#

Data

DF

t

WDH

DS

t

OH

t

DH

Valid

In

Valid

Out

Valid In

Valid Out

Figure 15.8 Data# Polling Timings (During Embedded Algorithms)

t_RC

Addresses

VA

t_ACC

t_CE

VA

CE#

t_CH

t_OE

OE#

WE#

t_OEH

t_DF

t_OH

High Z

DQ7

Valid Data

Complement

True

DQ0–DQ6

Status Data

True

Status Data

t_BUSY

RY/BY#

Note

VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle

36

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Figure 15.9 Toggle Bit Timings (During Embedded Algorithms)

t_RC

Addresses

CE#

VA

t_ACC

t_CE

VA

t_CH

t_OE

OE#

WE#

t_OEH

t_DF

t_OH

High Z

DQ6/DQ2

RY/BY#

Valid Status

(first read)

Valid Status

Valid Data

(second read)

(stops toggling)

t_BUSY

Note

VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read cycle, and array data read cycle.

Figure 15.10 DQ2 vs. DQ6

Enter

Erase

Suspend

Enter Erase

Suspend Program

Embedded

Erasing

Erase

Resume

Erase

Erase Suspend

Read

Erase

WE#

Erase

Erase Suspend

Suspend

Program

Complete

Read

DQ6

DQ2

Note

The system may use CE# or OE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within an erase-suspended sector.

Table 15.4 Temporary Sector Unprotect

Parameter

JEDEC

Std

Description

All Speed Options

Unit

ns

t

V

Rise and Fall Time (See Note)

ID

Min

500

4

VIDR

t

RESET# Setup Time for Temporary Sector Unprotect

µs

RSP

Note

Not 100% tested.

February 27, 2009 S29AL004D_00_A6

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37

D a t a S h e e t

Figure 15.11 Temporary Sector Unprotect Timing Diagram

12 V

RESET#

0 or 3 V

t_VIDR

Program or Erase Command Sequence

CE#

WE#

t_RSP

RY/BY#

Figure 15.12 Sector Protect/Unprotect Timing Diagram

V

ID

V

IH

RESET#

SA, A6,

A1, A0

Valid*

Status

Sector Protect/Unprotect

Verify

40h

Data

60h

Sector Protect: 150 µs

Sector Unprotect: 15 ms

1 µs

CE#

WE#

OE#

Note

For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0.

38

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S29AL004D_00_A6 February 27, 2009

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Table 15.5 Alternate CE# Controlled Erase/Program Operation

Parameter

JEDEC Std

Speed Options

Description

Write Cycle Time (Note 1)

55

70

0

90

Unit

t

55

90

AVAV

AVEL

ELAX

DVEH

EHDX

WC

t

Address Setup Time

Address Hold Time

Data Setup Time

AS

AH

DS

DH

t

45

35

0

t

35

45

t

Data Hold Time

t

Output Enable Setup Time

0

OES

Min

ns

Read Recovery Time Before Write

(OE# High to WE# Low)

t

0

GHEL

WLEL

GHEL

t

WE# Setup Time

0

WS

t

WE# Hold Time

EHWH

WH

t

CE# Pulse Width

35

30

20

5

ELEH

EHEL

CP

t

CE# Pulse Width High

Latency Between Read and Write Operations

CPH

t

Min

Typ

ns

µs

SR/W

Byte

Programming Operation

(Note 2)

t

WHWH1

WHWH2

WHWH1

Word

7

Sector Erase Operation (Note 2)

0.7

sec

WHWH2

Note

1. Not 100% tested.

2. See Erase And Programming Performance on page 40 for more information.

Figure 15.13 Alternate CE# Controlled Write Operation Timings

555 for program

2AA for erase

PA for program

SA for sector erase

555 for chip erase

Data# Polling

Addresses

PA

t_WC

t_WH

t_AS

t_AH

WE#

OE#

t_GHEL

t_{WHWH1 or 2}

t_CP

CE#

Data

t_WS

t_CPH

t_DS

t_BUSY

t_DH

DQ7#

D_OUT

t_RH

A0 for program

55 for erase

PD for program

30 for sector erase

10 for chip erase

RESET#

RY/BY#

Notes

1. PA = program address, PD = program data, DQ7# = complement of the data written to the device, D

2. Figure indicates the last two bus cycles of command sequence.

3. Word mode address used as an example.

= data written to the device.

OUT

February 27, 2009 S29AL004D_00_A6

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D a t a S h e e t

16. Erase And Programming Performance

Parameter

Sector Erase Time

Typ (Note 1)

Max (Note 2)

Unit

s

Comments

0.7

11

7

10

Excludes 00h programming

prior to erasure

Chip Erase Time

s

Byte Programming Time

Word Programming Time

210

12.5

8.5

µs

s

7

Excludes system level

overhead (Note 5)

Byte Mode

Word Mode

4.2

2.9

Chip Programming Time

(Note 3)

s

Notes

1. Typical program and erase times assume the following conditions: 25°C, V = 3.0 V, 100,000 cycles, checkerboard data pattern.

CC

2. Under worst case conditions of 90°C, V = 2.7 V, 1,000,000 cycles.

CC

3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster

than the maximum program times listed.

4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.

5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 8.1

on page 21 for further information on command definitions.

6. The device has a minimum erase and program cycle endurance of 100,000 cycles per sector

Table 16.1 TSOP, SO, And BGA Pin Capacitance

Parameter Symbol

Parameter Description

Test Setup

= 0

Package

TSOP, SO

BGA

Typ

6

Max

7.5

5.0

12

Unit

C

Input Capacitance

V

IN

4.2

8.5

5.4

7.5

3.9

TSOP, SO

BGA

C

Output Capacitance

V

= 0

pF

OUT

6.5

9

TSOP, SO

BGA

C

Control Pin Capacitance

V

= 0

IN

IN2

4.7

Notes

1. Sampled, not 100% tested.

2. Test conditions T = 25°C, f = 1.0 MHz.

A

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17. Physical Dimensions

17.1 TS 048—48-Pin Standard TSOP

2X

0.10

STANDARD PIN OUT (TOP VIEW)

2X (N/2 TIPS)

0.10

2X

2

0.10

5

A2

1

N

REVERSE PIN OUT (TOP VIEW)

3

SEE DETAIL B

A

B

1

N

E

N

2

N

2

+1

e

9

5

D1

A1

N

+1

N

2

4

2

D

0.25

B

C

2X (N/2 TIPS)

SEATING

PLANE

A

B

SEE DETAIL A

0.08MM (0.0031")

M

C

6

A - B S

b

7

WITH PLATING

c1

(c)

7

b1

BASE METAL

SECTION B-B

R

(c)

e/2

GAUGE PLANE

0.25MM (0.0098") BSC

θ°

PARALLEL TO

SEATING PLANE

X

C

L

X = A OR B

DETAIL A

DETAIL B

NOTES:

CONTROLLING DIMENSIONS ARE IN MILLIMETERS (mm).

(DIMENSIONING AND TOLERANCING CONFORMS TO ANSI Y14.5M-1982)

Jedec

MO-142 (D) DD

1

2

3

4

MIN

NOM MAX

1.20

Symbol

PIN 1 IDENTIFIER FOR REVERSE PIN OUT (DIE UP).

A

A1

A2

b1

b

c1

c

D

PIN 1 IDENTIFIER FOR REVERSE PIN OUT (DIE DOWN), INK OR LASER MARK.

0.15

0.05

0.95

0.17

0.10

1.00

0.20

1.05

0.23

0.27

0.16

0.21

TO BE DETERMINED AT THE SEATING PLANE -C- . THE SEATING PLANE IS DEFINED AS THE PLANE OF

CONTACT THAT IS MADE WHEN THE PACKAGE LEADS ARE ALLOWED TO REST FREELY ON A FLAT

HORIZONTAL SURFACE.

0.22

5

6

DIMENSIONS D1 AND E DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE MOLD PROTUSION IS

0.15mm (.0059") PER SIDE.

19.80 20.00 20.20

18.30 18.40 18.50

11.90 12.00 12.10

DIMENSION b DOES NOT INCLUDE DAMBAR PROTUSION. ALLOWABLE DAMBAR PROTUSION SHALL BE

0.08 (0.0031") TOTAL IN EXCESS OF b DIMENSION AT MAX. MATERIAL CONDITION. MINIMUM SPACE

BETWEEN PROTRUSION AND AN ADJACENT LEAD TO BE 0.07 (0.0028").

D1

E

e

7

THESE DIMENSIONS APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.10MM (.0039") AND

0.25MM (0.0098") FROM THE LEAD TIP.

0.50 BASIC

L

0

R

N

0.50

0˚

0.60

0.70

8˚

8

9

LEAD COPLANARITY SHALL BE WITHIN 0.10mm (0.004") AS MEASURED FROM THE SEATING PLANE.

DIMENSION "e" IS MEASURED AT THE CENTERLINE OF THE LEADS.

0.08

0.20

48

3355 \ 16-038.10c

Note

For reference only. BSC is an ANSI standard for Basic Space Centering.

February 27, 2009 S29AL004D_00_A6

S29AL004D

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D a t a S h e e t

17.2 VBK 048—48 Ball Fine-Pitch Ball Grid Array (FBGA) 8.15 x 6.15 mm

0.10 (4X)

D1

A

D

6

5

4

3

2

1

7

e

SE

E1

E

H

G

F

E

D

C

B

A

INDEX MARK

10

6

B

A1 CORNER

PIN A1

CORNER

7

fb

SD

f 0.08

f 0.15

M

C

TOP VIEW

C A

B

BOTTOM VIEW

0.10 C

0.08 C

A2

A

SEATING PLANE

SIDE VIEW

C

A1

NOTES:

PACKAGE

JEDEC

VBK 048

N/A

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.

2. ALL DIMENSIONS ARE IN MILLIMETERS.

8.15 mm x 6.15 mm NOM

PACKAGE

3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010 (EXCEPT

AS NOTED).

SYMBOL

MIN

---

NOM

MAX

1.00 OVERALL THICKNESS

--- BALL HEIGHT

NOTE

4.

e

REPRESENTS THE SOLDER BALL GRID PITCH.

A

A1

A2

D

---

5. SYMBOL "MD" IS THE BALL ROW MATRIX SIZE IN THE

"D" DIRECTION.

0.18

0.62

SYMBOL "ME" IS THE BALL COLUMN MATRIX SIZE IN THE

"E" DIRECTION.

---

0.76 BODY THICKNESS

BODY SIZE

8.15 BSC.

6.15 BSC.

5.60 BSC.

4.00 BSC.

8

N IS THE TOTAL NUMBER OF SOLDER BALLS.

E

BODY SIZE

6

7

DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL

DIAMETER IN A PLANE PARALLEL TO DATUM C.

D1

E1

BALL FOOTPRINT

SD AND SE ARE MEASURED WITH RESPECT TO DATUMS

A AND B AND DEFINE THE POSITION OF THE CENTER

SOLDER BALL IN THE OUTER ROW.

MD

ME

N

ROW MATRIX SIZE D DIRECTION

ROW MATRIX SIZE E DIRECTION

TOTAL BALL COUNT

6

WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN

THE OUTER ROW PARALLEL TO THE D OR E DIMENSION,

RESPECTIVELY, SD OR SE = 0.000.

48

fb

0.35

---

0.43 BALL DIAMETER

WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN

THE OUTER ROW, SD OR SE = e/2

e

0.80 BSC.

0.40 BSC.

---

BALL PITCH

SD / SE

SOLDER BALL PLACEMENT

DEPOPULATED SOLDER BALLS

8. NOT USED.

9. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED

BALLS.

10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK

MARK, METALLIZED MARK INDENTATION OR OTHER MEANS.

3338 \ 16-038.25b

42

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17.3 SO 044—44-Pin Small Outline Package

Dwg rev AC; 10/99

February 27, 2009 S29AL004D_00_A6

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D a t a S h e e t

18. Revision Summary

18.1 Revision A0 (November 12, 2004)

Initial release

18.2 Revision A1 (February 18, 2005)

Added Cover Page

Ordering Information

Change package type from S to M.

Valid Combination Table

Package Type, Material, and Temperature Range from SAL and SFI to MAL and MFI.

Changed Package Description from SSOP to SOP

Erase and Programming Performance Table

Changed chip erase time in table.

18.3 Revision A2 (June 1, 2005)

Global

Updated status from Advance Information to Preliminary data sheet.

Distinctive Characteristics

Updated High Performance access time to 55 ns.

Product Selector Guide

Added 55 ns speed column.

Ordering Information

Added tube packing type.

Added Extended Temperature range.

Added 55 ns speed option.

Valid Combinations Table

Added two designators to packing types.

Added speed option along with speed option package type nomenclature.

Added Note for this table.

Operating Range

Added extended temperature range information.

Moved Figures 7 and 8 under Operating Range area.

Erase and Programming Performance

Changed Byte Programing Time values for Typical and Maximum.

44

S29AL004D

S29AL004D_00_A6 February 27, 2009

D a t a S h e e t

18.4 Revision A3 (June 21, 2005)

Global

Update from Preliminary status to full Data Sheet.

Ordering Information

Added two Model Numbers.

Valid Combinations Table

Updated table with new Model Numbers and Package Types.

18.5 Revision A4 (May 22, 2006)

AC Characteristics

Added t_SR/Wparameter to read and erase/program operations tables. Added back-to-back read/write cycle

timing diagram. Changed maximum value for t_DFand t_FLQZ

.

18.6 Revision A5 (June 22, 2006)

Connection Diagrams

Changed inputs on pins 1 and 2 of SO package.

Read Operations Timings figure

Connected end of t_RCperiod to start of t_OHperiod.

Erase/Program Operations table

Changed t_BUSYto a maximum specification.

18.7 Revision A6 (February 27, 2009)

Global

Added obsolescence information to Cover Sheet, Distinctive Characteristics, and Ordering Information

sections of data sheet.

Colophon

The products described in this document are designed, developed and manufactured as contemplated for general use, including without

limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as

contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the

public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility,

aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for

any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). Please note that Spansion will not be liable to

you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor

devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design

measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal

operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under

the Foreign Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country,

the prior authorization by the respective government entity will be required for export of those products.

Trademarks and Notice

The contents of this document are subject to change without notice. This document may contain information on a Spansion product under

development by Spansion. Spansion reserves the right to change or discontinue work on any product without notice. The information in this

document is provided as is without warranty or guarantee of any kind as to its accuracy, completeness, operability, fitness for particular purpose,

merchantability, non-infringement of third-party rights, or any other warranty, express, implied, or statutory. Spansion assumes no liability for any

damages of any kind arising out of the use of the information in this document.

ORNAND2^™, HD-SIM^™, EcoRAM^™and combinations thereof, are trademarks of Spansion LLC in the US and other countries. Other names

used are for informational purposes only and may be trademarks of their respective owners.

February 27, 2009 S29AL004D_00_A6

S29AL004D

45

型号	制造商	描述	价格	文档
S29AL004D70MAI022	SPANSION	4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory	获取价格
S29AL004D70MAI023	SPANSION	4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory	获取价格
S29AL004D70MAI023	CYPRESS	Flash, 256KX16, 70ns, PDSO44, SOP-44	获取价格
S29AL004D70MAI10	SPANSION	Flash, 256KX16, 70ns, PDSO44, MO-108AA, SOP-44	获取价格
S29AL004D70MAI11	SPANSION	Flash, 256KX16, 70ns, PDSO44, MO-108AA, SOP-44	获取价格
S29AL004D70MAI20	SPANSION	Flash, 256KX16, 70ns, PDSO44, MO-108AA, SOP-44	获取价格
S29AL004D70MAI21	SPANSION	Flash, 256KX16, 70ns, PDSO44, MO-108AA, SOP-44	获取价格
S29AL004D70MAN010	SPANSION	Flash, 256KX16, 70ns, PDSO44, MO-108AA, SOP-44	获取价格
S29AL004D70MAN013	CYPRESS	Flash, 256KX16, 70ns, PDSO44, SOP-44	获取价格
S29AL004D70MAN21	SPANSION	Flash, 256KX16, 70ns, PDSO44, MO-108AA, SOP-44	获取价格

S29AL004D70MAI021

S29AL004D70MAI021 概述

S29AL004D70MAI021 数据手册

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