E-L6506D

更新时间:2025-01-13 14:05:11
描述:STEPPER MOTOR CONTROLLER, PDSO20, SOP-20

E-L6506D 概述

STEPPER MOTOR CONTROLLER, PDSO20, SOP-20 运动控制电子器件

E-L6506D 规格参数

生命周期:Active零件包装代码:SOIC
包装说明:SOP,针数:20
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.37
Is Samacsys:N模拟集成电路 - 其他类型:STEPPER MOTOR CONTROLLER
JESD-30 代码:R-PDSO-G20JESD-609代码:e3
长度:12.8 mm功能数量:1
端子数量:20封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE认证状态:Not Qualified
座面最大高度:2.65 mm最大供电电压 (Vsup):7 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES端子面层:MATTE TIN
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL宽度:7.5 mm
Base Number Matches:1

E-L6506D 数据手册

通过下载E-L6506D数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。

PDF下载
L6506  
L6506D  
®
CURRENT CONTROLLER FOR STEPPING MOTORS  
DESCRIPTION  
The L6506/D is a linear integrated circuit designed  
to sense and control the current in stepping motors  
and similar devices. When used in conjunction with  
the L293, L298, L7150, L6114/L6115, the chip set  
forms a constant current drive for an inductive load  
and performs all the interface function from the con-  
trol logic thru the power stage.  
DIP18  
SO20  
Two or more devices may be synchronized using  
the sync pin. In this mode of operation the oscillator  
in the master chip sets the operating frequency in all  
chips.  
ORDERING NUMBERS:  
L6506  
L6506D  
BLOCK DIAGRAM (pin’s number referred to DIP-18)  
July 2003  
1/8  
L6506 -L6506D  
PIN CONNECTIONS (top view)  
DIP18  
SO20  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
V
VCC  
Vi  
Supply Voltage  
Input Signals  
10  
7
V
Ptot  
1
0.8  
W
W
Total Power Dissipation (Tamb = 70°C) for DIP18  
Total Power Dissipation (Tamb =70ÉC) for SO20  
Tj  
Junction Temperature  
Storage Temperature  
150  
°C  
°C  
Tstg  
-40 to 150  
THERMAL DATA  
Symbol  
Parameter  
DIP18  
80  
SO20  
Unit  
Rth j-amb  
Thermal Resistance Junction-ambient  
Max.  
100  
°C/W  
ELECTRICAL CHARACTERESTICS (VCC = 5.0V, Tamb = 25°C; unless otherwise noted)  
Symbol  
VCC  
Parameter  
Supply Voltage  
Quiescent Supply Current  
Test Conditions  
Min.  
Typ.  
Max.  
7
Unit  
V
4.5  
ICC  
VCC = 7V  
25  
mA  
COMPARATOR SECTION  
Symbol  
VIN  
Parameter  
Test Conditions  
Vsense Inputs  
Min.  
Typ.  
Max.  
3
Unit  
V
Input Voltage Range  
Input Offset Voltage  
Input Offset Current  
Input Bias Current  
Response time  
–0.3  
VIO  
VIN = 1.4V  
mV  
nA  
±5.0  
±200  
1
IIO  
IIB  
µA  
µs  
VREF = 1.4V VSENS = 0 to 5V  
0.8  
1.5  
2/8  
L6506 - L6506D  
ELECTRICAL CHARACTERISTICS (continued)  
COMPARATOR SECTION PERFORMANCE (Over Operating Temperature Range)  
Symbol  
VIO  
Parameter  
Input Offset Voltage  
Input Offset Curent  
Test Condtions  
VIN = 1.4V  
Min.  
Typ.  
Max.  
±20  
Unit  
mV  
nA  
IIO  
±500  
LOGIC SECTION (Over Operating Temperature Range - TTL compatible inputs & outputs)  
Symbol  
VIH  
Parameter  
Input High Voltage  
Test Condtions  
Min.  
Typ.  
Max.  
Vs  
Unit  
V
2
VIL  
Input Low Voltage  
0.8  
V
VOH  
Output High Voltage  
VCC = 4.75V  
2
3.5  
V
IOH = 400µA  
VOL  
IOH  
Ouptut Low Voltage  
VCC = 4.75V  
0.25  
0.4  
V
IOH = 4mA  
Ouput Source Current - Outputs  
1 - 4  
VCC = 4.75V  
2.75  
mA  
OSCILLATOR  
Symbol  
Parameter  
Test Condtions  
Min.  
Typ.  
Max.  
Unit  
KHz  
V
fosc  
VthL  
VthH  
Ri  
Frequency Range  
5
70  
Lower Threshold Voltage  
Higher Threshold Voltage  
Internal Discharge Resistor  
0.33 VCC  
0.66 VCC  
1
V
0.7  
1.3  
kΩ  
CIRCUIT OPERATION  
The L6506 is intended for use with dual bridge driv-  
ers, such as the L298, quad darlington arrays, such  
as the L7150, quad DMOS array such as L6114-  
L6115, or discrete power transistors to drive stepper  
motors and other similar loads. The main function of  
the device isto sense and control the currentin each  
of the load windings.  
tor and Vref. Since separate inputs are provided for  
each chopper, each of the loads may be pro-  
grammed independently allowing the device to be  
used to implement microstepping of the motor.  
Lower threshold of L6506’s oscillator is 1/3 VCC. Up-  
per threshold is 2/3 VCC and internal discharge re-  
sistor is 1 KΩ ± 30 %.  
Acommonon-chiposcillatordrivesthedualchopper  
and sets the operating frequency for the pulse width  
modulated drive. The RC network on pin 1 sets the  
operating frequency which is given by the equation  
Ground noise problems in multiple configurations  
can be avoided by synchronizing the oscillators.  
This may be done by connecting the sync pins of  
each of the devices with the oscillator output of the  
master device and connecting the R/C pin of the un-  
used oscillators to ground.  
:
1
f =  
for R > 10 K  
0.69 RC  
The equations for the active time of the sync pulse  
(T2), the inactive time ofthe syncsignal (T1)and the  
dutycyclecan befoundbylookingatthefigure1and  
are :  
The oscillator provides pulses to set the two flip-  
flops which in turn cause the outputs to activate the  
drive. When the current in the load winding reaches  
the programmed peak value, the voltage across the  
sense resistor (Rsense) is equal to Vref and the cor-  
responding comparator resets its flip-flop interrupt-  
ing the drive current until the next oscillatorpulse oc-  
curs. The peak current in each winding is pro-  
grammed by selecting the value of the sense resis-  
R1 RIN  
R1 + RIN  
T2 = 0.69 C1  
(1)  
(2)  
(3)  
T1 = 0.69 R1 C1  
T2  
DC =  
T1 + T2  
3/8  
L6506 -L6506D  
By substituting equations 1 and 2 into equation 3  
and solving for the value of R1 the following equa-  
tions for the external components can be derived :  
1
Looking at equation 1 it can easily be seen that the  
minimum pulse width of T2 will occur when the value  
of R1 is at its minimum and the value of R1 at its  
maximum. Therefore, when evaluating equation 4  
the minimum value for R1 of 700(1 K– 30 %)  
should be used to guarantee the required pulse  
width.  
R1 = (  
– 2) RIN  
(4)  
DC  
T1  
0.69 R1  
C1 =  
(5)  
Figure 1 : Oscillator Circuit and Waveforms.  
APPLICATIONS INFORMATION  
The circuits shown in figure 2 use the L6506 to im-  
plement constant current drives for stepper motors.  
Figure 2 shows the L6506 used with the L298 to  
drive a 2 phase bipolar motor. The peak current can  
be calculated using the equation :  
The L6506 may be used to implement eitherfull step  
or half step drives. In the case of 2 phase bipolar  
stepper motor applications, if a half step drive is  
used, the bridge requires an additional input to dis-  
able the power stage during the half step. If used in  
conjunction with the L298 the enable inputs may be  
used for this purpose.  
Vref  
Ipeak  
=
Rsense  
For quad darlington array in 4 phase unipolar motor  
applications half step may be implemented using  
the 4 phase inputs.  
The circuit of Fig.2 can be used in applications re-  
quiring different peak and hold current values by  
modifying the reference voltage.  
The L6506 may also be used to implement mi-  
crostepping of either bipolar or unipolar motors.  
4/8  
L6506 - L6506D  
Figure 2 : Application Circuit Bipolar Stepper Motor Driver. (pin’s number referred to DIP18)  
5/8  
L6506 -L6506D  
mm  
inch  
DIM.  
OUTLINE AND  
MECHANICAL DATA  
MIN. TYP. MAX. MIN. TYP. MAX.  
a1  
B
b
0.254  
1.39  
0.010  
1.65 0.055  
0.065  
0.915  
0.46  
0.25  
0.018  
0.010  
b1  
D
E
e
23.24  
8.5  
2.54  
20.32  
0.335  
0.100  
0.800  
e3  
F
7.1  
0.280  
0.155  
I
3.93  
L
3.3  
0.130  
DIP18  
Z
1.27  
1.59  
0.050 0.063  
6/8  
L6506 - L6506D  
mm  
inch  
OUTLINE AND  
MECHANICAL DATA  
DIM.  
MIN. TYP. MAX. MIN. TYP. MAX.  
A
A1  
B
C
D
E
e
2.35  
0.1  
2.65 0.093  
0.3 0.004  
0.104  
0.012  
0.020  
0.013  
0.512  
0.299  
0.33  
0.23  
12.6  
7.4  
0.51 0.013  
0.32 0.009  
13  
0.496  
0.291  
7.6  
1.27  
0.050  
H
h
10  
0.25  
0.4  
10.65 0.394  
0.75 0.010  
0.419  
0.030  
0.050  
L
1.27 0.016  
SO20  
K
0˚ (min.)8˚ (max.)  
L
h x 45˚  
A
B
A1  
K
C
e
H
D
20  
11  
E
1
01  
SO20MEC  
7/8  
L6506 -L6506D  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the conse-  
quences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No  
license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this  
publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMi-  
croelectronics products are not authorized for use as critical components in life support devices or systems without express written  
approval of STMicroelectronics.  
The ST logo is a registered trademark of STMicroelectronics  
© 2003 STMicroelectronics – Printed in Italy – All Rights Reserved  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -  
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.  
http://www.st.com  
8/8  

E-L6506D 相关器件

型号 制造商 描述 价格 文档
E-L6561 STMICROELECTRONICS 0.7A POWER FACTOR CONTROLLER, PDIP8, MINI, DIP-8 获取价格
E-L6561D STMICROELECTRONICS 0.7A POWER FACTOR CONTROLLER, PDSO8, SO-8 获取价格
E-L6561D013TR STMICROELECTRONICS 0.7A POWER FACTOR CONTROLLER, PDSO8, SO-8 获取价格
E-L6562D STMICROELECTRONICS Transition mode 获取价格
E-L6563 STMICROELECTRONICS IC,POWER FACTOR CONTROLLER,SOP,14PIN 获取价格
E-L6563TR STMICROELECTRONICS 0.003A POWER FACTOR CONTROLLER WITH POST REGULATOR, PDSO14, SO-14 获取价格
E-L6565D STMICROELECTRONICS Quasi-resonant Controller 获取价格
E-L6569 STMICROELECTRONICS High Voltage Half Bridge Driver with oscillator and Integrated Bootstrap Diode 获取价格
E-L6569D STMICROELECTRONICS High Voltage Half Bridge Driver with oscillator and Integrated Bootstrap Diode 获取价格
E-L6571BD013TR STMICROELECTRONICS High Voltage Half Bridge Driver with oscillator 获取价格

E-L6506D 相关文章

  • 英伟达CEO黄仁勋本周将访问中国,业界高度关注
    2025-01-15
    4
  • 美出台禁令:禁止进口中国联网汽车软硬件技术,引发产业震荡
    2025-01-15
    3
  • 中美科技博弈升级:中国加强美企出口审查,东南亚、印度扩产路受阻
    2025-01-15
    7
  • 台积电美国厂面临封装能力挑战,4nm芯片进入质量验证最后阶段
    2025-01-15
    4