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P0111MN2AL3

更新时间：2025-07-07 01:52:35
品牌：STMICROELECTRONICS
描述：0.8A SCRs

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免费 PCB/SMT

P0111MN2AL3 概述

0.8A SCRs 0.8A可控硅

P0111MN2AL3 数据手册

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P01 Series  
®
SENSITIVE  
0.8A SCRs  
MAIN FEATURES:  
Symbol  
A
Value  
0.8  
Unit  
A
G
I
T(RMS)  
K
V
/V  
400 and 600  
5 to 200  
V
DRM RRM  
I
µA  
GT  
DESCRIPTION  
Thanks to highly sensitive triggering levels, the  
P01 SCR series is suitable for all applications  
where available gate current is limited, such as  
ground fault circuit interruptors, pilot circuits in  
solid state relays, stand-by mode power supplies,  
smoke and alarm detectors.  
SOT-223  
(P01xxN)  
TO-92  
(P01xxA)  
Available in through-hole or surface mount pack-  
ages, the voltage capability of this series has been  
upgrated since its introduction, to reach 600 V.  
ABSOLUTE RATINGS (limiting values)  
Symbol  
Parameter  
Value  
Unit  
I
RMS on-state current  
(180° conduction angle)  
TO-92  
SOT-223  
TO-92  
Tl = 55°C  
Tamb = 70°C  
Tl = 55°C  
T(RMS)  
0.8  
0.5  
A
IT  
Average on-state current  
(180° conduction angle)  
(AV)  
A
A
SOT-223  
tp = 8.3 ms  
tp = 10 ms  
Tamb = 70°C  
I
Non repetitive surge peak on-state  
current  
8
7
TSM  
Tj = 25°C  
²
²
2
tp = 10ms  
F = 60 Hz  
tp = 20 µs  
Tj = 25°C  
0.24  
50  
A S  
I t  
I t Value for fusing  
Critical rate of rise of on-state current  
dI/dt  
Tj = 125°C  
A/µs  
I
= 2 x I , tr ≤ 100 ns  
G
GT  
I
Peak gate current  
Tj = 125°C  
Tj = 125°C  
1
A
GM  
P
Average gate power dissipation  
0.1  
W
G(AV)  
T
Storage junction temperature range  
Operating junction temperature range  
- 40 to + 150  
- 40 to + 125  
stg  
°C  
Tj  
September 2000 - Ed: 3  
1/6  
P01 Series  
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)  
P01xx  
11  
Symbol  
Test Conditions  
Unit  
02  
18  
I
MIN.  
MAX.  
MAX.  
MIN.  
-
4
0.5  
GT  
µA  
200  
25  
0.8  
5
V
= 12 V  
R = 140 Ω  
D
L
V
V
V
V
GT  
V
Tj = 125°C  
V
I
= V  
R = 3.3 kΩ  
R
= 1 kΩ  
0.1  
8
GD  
D
DRM  
L
GK  
V
MIN.  
= 10 µA  
RG  
RG  
I = 50 mA  
R
= 1 kΩ  
MAX.  
MAX.  
5
mA  
mA  
I
T
GK  
H
I
I
= 1 mA  
R = 1 kΩ  
GK  
6
L
G
dV/dt  
V
= 67 % V  
R
= 1 kΩ  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
Tj = 125°C  
MIN.  
MAX.  
MAX.  
MAX.  
MAX.  
75  
80  
75  
V/µs  
V
D
DRM  
GK  
V
I
= 1.6 A tp = 380 µs  
1.95  
0.95  
600  
1
TM  
TM  
V
Threshold voltage  
V
t0  
R
Dynamic resistance  
mΩ  
µA  
d
I
V
V
V
= V  
= V  
= V  
= 400 V  
= 600 V  
R
R
R
= 1 kΩ  
= 1 kΩ  
= 1 kΩ  
GK  
GK  
DRM  
DRM  
DRM  
DRM  
RRM  
RRM  
RRM  
Tj = 25°C  
I
10  
µA  
µA  
RRM  
Tj = 125°C  
MAX.  
100  
GK  
THERMAL RESISTANCES  
Symbol  
Parameter  
Value  
Unit  
R
R
R
Junction to case (DC)  
°C/W  
TO-92  
80  
30  
th(j-i)  
Junction to tab (DC)  
Junction to ambient  
SOT-223  
TO-92  
th(j-t)  
150  
60  
°C/W  
th(j-a)  
²
SOT-223  
S = 5 cm  
S = Copper surface under tab  
PRODUCT SELECTOR  
Voltage  
Part Number  
Sensitivity  
Package  
400 V  
600 V  
P0102DA  
P0102DN  
P0102MA  
P0102MN  
P0111DA  
P0111DN  
P0111MA  
P0111MN  
P0118DA  
P0118DN  
P0118MA  
P0118MN  
X
200 µA  
200 µA  
200 µA  
200 µA  
25 µA  
25 µA  
25 µA  
25 µA  
5 µA  
TO-92  
SOT-223  
TO-92  
X
X
X
SOT-223  
TO-92  
X
X
SOT-223  
TO-92  
X
X
SOT-223  
TO-92  
X
X
5 µA  
SOT-223  
TO-92  
X
X
5 µA  
5 µA  
SOT-223  
2/6  
P01 Series  
ORDERING INFORMATION  
Blank  
P 01 02 D N  
1AA3  
SENSITIVE  
SCR  
SERIES  
PACKING MODE:  
1AA3:TO-92 bulk (preferred)  
2AL3:TO-92 ammopack  
5AA4: SOT-223 Tape & Reel  
VOLTAGE:  
D: 400V  
M: 600V  
PACKAGE:  
A:TO-92  
N: SOT-223  
CURRENT: 0.8A  
SENSITIVITY:  
02: 200µA  
11: 25µA  
18: 5µA  
OTHER INFORMATION  
Part Number  
Marking  
Weight  
Base Quantity  
Packing mode  
P01xxyA 1AA3  
P01xxyA 2AL3  
P0102yN 5AA4  
P0111yN 5AA4  
P0118yN 5AA4  
P01xxyA  
P01xxyA  
0.2 g  
0.2 g  
2500  
2000  
1000  
1000  
1000  
Bulk  
Ammopack  
P2y  
P1y  
P8y  
0.12 g  
0.12 g  
0.12 g  
Tape & reel  
Tape & reel  
Tape & reel  
Note: xx = sensitivity, y = voltage  
Fig. 1: Maximum average power dissipation  
Fig. 2-1: Average and D.C. on-state current  
versus average on-state current.  
versus lead temperature.  
P(W)  
IT(av)(A)  
1.1  
1.0  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
0.1  
0.0  
Tlead or Ttab (°C)  
0
25  
50  
75  
100  
125  
0.0  
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
Fig. 2-2: Average and D.C. on-state current  
versus ambient temperature (device mounted on  
FR4 with recommended pad layout for SOT-223).  
Fig. 3: Relative variation of thermal impedance  
junction to ambient versus pulse duration.  
K = [Zth(j-a)/Rth(j-a)]  
IT(av)(A)  
1.00  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.10  
0.1  
0.0  
Tamb(°C)  
tp(s)  
0.01  
1E-2  
0
25  
50  
75  
100  
125  
1E-1  
1E+0  
1E+1  
1E+2 5E+2  
3/6  
P01 Series  
Fig. 4: Relative variation of gate trigger current,  
holding current and latching current versus  
junction temperature (typical values).  
Fig. 5:Relative variation of holding current versus  
gate-cathode resistance (typical values).  
IH[Rgk]/IH[Rgk=1kΩ]  
IGT, IH, IL[Tj] / IGT, IH, IL[T] = 25°C  
6
5
4
3
2
1
Tj(°C)  
Rgk(kΩ)  
0
-40 -20  
0
20  
40  
60  
80 100 120 140  
Fig. 6: Relative variation of dV/dt immunity  
Fig. 7: Relative variation of dV/dt immunity  
versus gate-cathode resistance (typical values).  
versus gate-cathode capacitance (typical values).  
dV/dt[Cgk] / dV/dt[Rgk=1kΩ]  
dV/dt[Rgk] / dV/dt[Rgk=1kΩ]  
10  
10.0  
8
6
4
1.0  
2
Rgk(kΩ)  
Cgk(nF)  
0
0.1  
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0  
0
1
2
3
4
5
6
7
Fig. 8: Surge peak on-state current versus  
number of cycles.  
Fig. 9: Non-repetitive surge peak on-state  
current for sinusoidal pulse with width  
a
tp < 10 ms, and corresponding value of I²t.  
ITSM(A), I2t(A2s)  
ITSM(A)  
100.0  
8
7
tp=10ms  
6
Onecycle  
10.0  
1.0  
5
4
3
2
1
0
Non repetitive  
Tj initial=25°C  
Repetitive  
Tamb=25°C  
tp(ms)  
Numberofcycles  
100 1000  
0.1  
0.01  
1
10  
10.00  
1.00  
0.10  
4/6  
P01 Series  
Fig. 10: On-state characteristics (maximum  
values).  
Fig. 11: SOT-223 Thermal resistance junction to  
ambient versus copper surface under tab (Epoxy  
printed circuit board FR4, copper thickness:  
35 µm).  
ITM(A)  
Rth(j-a) (°C/W)  
1E+1  
130  
120  
110  
100  
90  
Ω
1E+0  
80  
70  
60  
50  
1E-1  
40  
30  
20  
S (cm2)  
VTM(V)  
10  
0
1E-2  
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0  
0.5  
1.0  
1.5 2.0  
2.5  
3.0  
3.5  
4.0 4.5  
PACKAGE MECHANICAL DATA  
TO-92 (Plastic)  
DIMENSIONS  
REF.  
Millimeters  
Inches  
A
Min. Typ. Max. Min. Typ. Max.  
a
A
B
C
D
E
F
a
1.35  
2.54  
0.053  
0.100  
4.70  
0.185  
B
C
4.40  
0.173  
0.500  
12.70  
F
D
E
3.70  
0.50  
0.146  
0.019  
5/6  
P01 Series  
PACKAGE MECHANICAL DATA  
SOT-223 (Plastic)  
DIMENSIONS  
A
c
REF.  
Millimeters  
Inches  
V
A1  
Min. Typ. Max. Min. Typ. Max.  
B
A
A1  
B
1.80  
0.071  
0.004  
e1  
D
0.02  
0.60  
2.90  
0.24  
6.30  
0.1 0.0008  
0.70 0.85 0.024 0.027 0.034  
3.00 3.15 0.114 0.118 0.124  
0.26 0.35 0.009 0.010 0.014  
6.50 6.70 0.248 0.256 0.264  
B1  
B1  
c
D
H
e
2.3  
4.6  
0.090  
0.181  
E
e1  
E
3.30  
6.70  
3.50 3.70 0.130 0.138 0.146  
7.00 7.30 0.264 0.276 0.287  
10° max  
H
e
V
FOOTPRINT DIMENSIONS (in millimeters)  
SOT-223 (Plastic)  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted  
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject  
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not  
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
© The ST logo is a registered trademark of STMicroelectronics  
© 2000 STMicroelectronics - Printed in Italy - All Rights Reserved  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco  
Singapore - Spain - Sweden - Switzerland - United Kingdom  
http://www.st.com  
6/6  

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