概述
数据手册
替代型号TXN625RG 概述
25A标准SCR
TXN625RG 数据手册
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PDF下载TN25 and TYNx25 Series
®
STANDARD
25A SCRs
MAIN FEATURES:
Symbol
A
Value
25
Unit
A
G
I
T(RMS)
K
V
/V
600 to 1000
40
V
DRM RRM
A
A
I
mA
GT
K
A
G
K
A
G
DESCRIPTION
2
D PAK
(TN25-G)
TO-220AB
(TYN)
The TYN / TN25 SCR Series is suitable for
general purpose applications.
Using clip assembly technology, they provide a
superior performance in surge current capabilities.
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
I
RMS on-state current (180° conduction angle)
T(RMS)
Tc = 100°C
Tc = 100°C
25
16
A
A
T
Average on-state current (180° conduction angle)
(AV)
I
Non repetitive surge peak on-state
current
tp = 8.3 ms
tp = 10 ms
314
300
TSM
Tj = 25°C
A
²
²
2
tp = 10 ms
F = 60 Hz
tp = 20 µs
Tj = 25°C
450
50
A S
I t
I t Value for fusing
Critical rate of rise of on-state current
dI/dt
Tj = 125°C
A/µs
I
= 2 x I , tr ≤ 100 ns
G
GT
I
Peak gate current
Tj = 125°C
Tj = 125°C
4
1
A
GM
P
Average gate power dissipation
W
G(AV)
T
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
stg
°C
V
Tj
V
Maximum peak reverse gate voltage
5
RGM
April 2002 - Ed: 4A
1/7
TN25 and TYNx25 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
Test Conditions
Value
Unit
I
MIN.
MAX.
MAX.
4
GT
mA
40
1.3
V
V
= 12 V
R = 33 Ω
D
L
V
V
V
GT
V
Tj = 125°C
MIN.
= V
R = 3.3 kΩ
0.2
50
GD
D
DRM
L
I
I = 500 mA Gate open
MAX.
MAX.
MIN.
mA
mA
V/µs
V
H
T
I
I
= 1.2 I
GT
90
L
G
V
I
= 67 % V
Gate open
dV/dt
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
1000
1.6
0.77
14
D
DRM
V
= 50 A tp = 380 µs
MAX.
MAX.
MAX.
MAX.
TM
TM
V
Threshold voltage
V
t0
R
Dynamic resistance
mΩ
µA
mA
d
I
I
5
DRM
V
= V
RRM
DRM
4
RRM
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
R
Junction to case (DC)
Junction to ambient (DC)
°C/W
°C/W
1.0
60
45
th(j-c)
th(j-a)
R
TO-220AB
²
²
S = 1 cm
D PAK
S = Copper surface under tab
PRODUCT SELECTOR
Voltage (xxx)
Part Number
Sensitivity
Package
600 V
800 V
1000 V
²
TN2540-xxxG
TYNx25
X
X
X
X
X
X
40 mA
40 mA
D PAK
TO-220AB
2/7
TN25 and TYNx25 Series
ORDERING INFORMATION
TN 25 40 - 600 G (-TR)
STANDARD
SCR
SERIES
PACKING MODE:
Blank:Tube
-TR:Tape & Reel
PACKAGE:
G: D2PAK
CURRENT: 25A
SENSITIVITY:
40: 40mA
VOLTAGE:
600: 600V
800: 800V
1000: 1000V
TYN 6 25 (RG)
STANDARD
PACKING MODE
SCR
SERIES
Blank: Bulk
RG:Tube
VOLTAGE:
6: 600V
8: 800V
CURRENT: 25A
10: 1000V
OTHER INFORMATION
Part Number
TN2540-x00G
Marking
TN2540x00G
Weight
Base Quantity
Packing mode
1.5 g
1.5 g
2.3 g
2.3 g
50
1000
250
50
Tube
Tape & reel
Bulk
TN2540-x00G-TR
TYNx25
TN2540x00G
TYNx25
TYNx25RG
TYNx25
Tube
Note: x = voltage
3/7
TN25 and TYNx25 Series
Fig. 1: Maximum average power dissipation
Fig. 2-1: Average and D.C. on-state current
versus average on-state current.
versus case temperature.
IT(av)(A)
P(W)
28
24
22
D.C.
26
α = 180°
24
22
20
20
18
16
14
12
10
8
6
4
2
0
18
16
14
12
10
8
α = 180°
360°
6
4
IT(av)(A)
10
α
Tcase(°C)
50 75
2
0
0
2
4
6
8
12
14
16
0
25
100
125
Fig. 2-2: Average and D.C. on-state current
versus ambient temperature (copper surface
under tab: S = 1 cm² (for D²PAK).
Fig. 3: Relative variation of thermal impedance
versus pulse duration.
IT(av)(A)
K = [Zth/Rth]
4.0
3.5
1.00
Zth(j-c)
D.C.
3.0
2.5
α = 180°
0.10
0.01
Zth(j-a)
2.0
1.5
1.0
0.5
tp(s)
Tamb(°C)
0.0
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
0
25
50
75
100
125
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature.
Fig. 5: Surge peak on-state current versus
number of cycles.
IGT,IH,IL [Tj] / IGT,IH,IL [Tj = 25 °C]
ITSM(A)
2.5
350
300
2.0
tp = 10ms
IGT
250
One cycle
Non repetitive
Tj initial = 25°C
1.5
200
150
100
50
IH & IL
1.0
Repetitive
Tcase = 100 °C
0.5
Tj(°C)
Number of c
ycles
100
0.0
0
-40 -20
0
20
40
60
80 100 120 140
1
10
1000
4/7
TN25 and TYNx25 Series
Fig. 6: Non-repetitive surge peak on-state
current for sinusoidal pulse with width
tp < 10 ms, and corresponding values of I²t.
Fig. 7: On-state characteristics (maximum
values).
a
2
2
ITSM(A),I t(A s)
ITM(A)
300
2000
1000
Tj initial = 25°C
Tj max.:
Vto = 0.77V
Rd = 14mΩ
100
ITSM
I2t
Tj = Tj max.
dI/dt
limitattion
10
Tj = 25°C
VTM(V)
tp(ms)
1
100
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
0.01
0.10
1.00
10.00
Fig. 8: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35 µm)
2
(D PAK).
Rth(j-a)(°C/W)
80
70
60
50
40
30
20
10
0
2
S(cm )
0
4
8
12 16 20 24 28 32 36 40
5/7
TN25 and TYNx25 Series
PACKAGE MECHANICAL DATA
2
D PAK (Plastic)
DIMENSIONS
Millimeters
Min. Typ. Max. Min. Typ. Max.
REF.
Inches
A
E
C2
L2
L3
A
A1
A2
B
4.30
2.49
0.03
0.70
1.25
0.45
1.21
8.95
10.00
4.88
15.00
1.27
1.40
4.60 0.169
2.69 0.098
0.23 0.001
0.93 0.027
0.181
0.106
0.009
0.037
D
L
B2
C
1.40
0.048 0.055
0.60 0.017
1.36 0.047
9.35 0.352
10.28 0.393
5.28 0.192
15.85 0.590
1.40 0.050
1.75 0.055
0.024
0.054
0.368
0.405
0.208
0.624
0.055
0.069
A1
C2
D
B2
B
R
C
E
G
G
L
A2
2.0 MIN.
L2
L3
R
FLAT ZONE
0.40
0.016
V2
V2
0°
8°
0°
8°
FOOTPRINT DIMENSIONS (in millimeters)
2
D PAK (Plastic)
16.90
10.30
5.08
1.30
3.70
8.90
6/7
TN25 and TYNx25 Series
PACKAGE MECHANICAL DATA
TO-220AB (Plastic)
DIMENSIONS
REF.
Millimeters
Inches
B
C
b2
Min. Typ. Max. Min. Typ. Max.
A
a1
a2
B
15.20
15.90 0.598
0.625
L
3.75
0.147
F
I
13.00
10.00
0.61
1.23
4.40
0.49
2.40
2.40
6.20
3.75
14.00 0.511
10.40 0.393
0.88 0.024
1.32 0.048
4.60 0.173
0.70 0.019
2.72 0.094
2.70 0.094
6.60 0.244
3.85 0.147
0.551
0.409
0.034
0.051
0.181
0.027
0.107
0.106
0.259
0.151
A
b1
b2
C
l4
c1
c2
e
c2
a1
l3
l2
a2
F
I
I4
L
15.80 16.40 16.80 0.622 0.646 0.661
2.65
1.14
1.14
2.95 0.104
1.70 0.044
1.70 0.044
0.116
0.066
0.066
b1
M
c1
l2
l3
M
e
2.60
0.102
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved
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7/7
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