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TXN625RG

更新时间：2025-07-10 10:25:08
品牌：STMICROELECTRONICS
描述：25A标准SCR

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TXN625RG 概述

25A标准SCR

TXN625RG 数据手册

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TN25 and TYNx25 Series  
®
STANDARD  
25A SCRs  
MAIN FEATURES:  
Symbol  
A
Value  
25  
Unit  
A
G
I
T(RMS)  
K
V
/V  
600 to 1000  
40  
V
DRM RRM  
A
A
I
mA  
GT  
K
A
G
K
A
G
DESCRIPTION  
2
D PAK  
(TN25-G)  
TO-220AB  
(TYN)  
The TYN / TN25 SCR Series is suitable for  
general purpose applications.  
Using clip assembly technology, they provide a  
superior performance in surge current capabilities.  
ABSOLUTE RATINGS (limiting values)  
Symbol  
Parameter  
Value  
Unit  
I
RMS on-state current (180° conduction angle)  
T(RMS)  
Tc = 100°C  
Tc = 100°C  
25  
16  
A
A
T
Average on-state current (180° conduction angle)  
(AV)  
I
Non repetitive surge peak on-state  
current  
tp = 8.3 ms  
tp = 10 ms  
314  
300  
TSM  
Tj = 25°C  
A
²
²
2
tp = 10 ms  
F = 60 Hz  
tp = 20 µs  
Tj = 25°C  
450  
50  
A S  
I t  
I t Value for fusing  
Critical rate of rise of on-state current  
dI/dt  
Tj = 125°C  
A/µs  
I
= 2 x I , tr ≤ 100 ns  
G
GT  
I
Peak gate current  
Tj = 125°C  
Tj = 125°C  
4
1
A
GM  
P
Average gate power dissipation  
W
G(AV)  
T
Storage junction temperature range  
Operating junction temperature range  
- 40 to + 150  
- 40 to + 125  
stg  
°C  
V
Tj  
V
Maximum peak reverse gate voltage  
5
RGM  
April 2002 - Ed: 4A  
1/7  
TN25 and TYNx25 Series  
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)  
Symbol  
Test Conditions  
Value  
Unit  
I
MIN.  
MAX.  
MAX.  
4
GT  
mA  
40  
1.3  
V
V
= 12 V  
R = 33 Ω  
D
L
V
V
V
GT  
V
Tj = 125°C  
MIN.  
= V  
R = 3.3 kΩ  
0.2  
50  
GD  
D
DRM  
L
I
I = 500 mA Gate open  
MAX.  
MAX.  
MIN.  
mA  
mA  
V/µs  
V
H
T
I
I
= 1.2 I  
GT  
90  
L
G
V
I
= 67 % V  
Gate open  
dV/dt  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
1000  
1.6  
0.77  
14  
D
DRM  
V
= 50 A tp = 380 µs  
MAX.  
MAX.  
MAX.  
MAX.  
TM  
TM  
V
Threshold voltage  
V
t0  
R
Dynamic resistance  
mΩ  
µA  
mA  
d
I
I
5
DRM  
V
= V  
RRM  
DRM  
4
RRM  
THERMAL RESISTANCES  
Symbol  
Parameter  
Value  
Unit  
R
Junction to case (DC)  
Junction to ambient (DC)  
°C/W  
°C/W  
1.0  
60  
45  
th(j-c)  
th(j-a)  
R
TO-220AB  
²
²
S = 1 cm  
D PAK  
S = Copper surface under tab  
PRODUCT SELECTOR  
Voltage (xxx)  
Part Number  
Sensitivity  
Package  
600 V  
800 V  
1000 V  
²
TN2540-xxxG  
TYNx25  
X
X
X
X
X
X
40 mA  
40 mA  
D PAK  
TO-220AB  
2/7  
TN25 and TYNx25 Series  
ORDERING INFORMATION  
TN 25 40 - 600 G (-TR)  
STANDARD  
SCR  
SERIES  
PACKING MODE:  
Blank:Tube  
-TR:Tape & Reel  
PACKAGE:  
G: D2PAK  
CURRENT: 25A  
SENSITIVITY:  
40: 40mA  
VOLTAGE:  
600: 600V  
800: 800V  
1000: 1000V  
TYN 6 25 (RG)  
STANDARD  
PACKING MODE  
SCR  
SERIES  
Blank: Bulk  
RG:Tube  
VOLTAGE:  
6: 600V  
8: 800V  
CURRENT: 25A  
10: 1000V  
OTHER INFORMATION  
Part Number  
TN2540-x00G  
Marking  
TN2540x00G  
Weight  
Base Quantity  
Packing mode  
1.5 g  
1.5 g  
2.3 g  
2.3 g  
50  
1000  
250  
50  
Tube  
Tape & reel  
Bulk  
TN2540-x00G-TR  
TYNx25  
TN2540x00G  
TYNx25  
TYNx25RG  
TYNx25  
Tube  
Note: x = voltage  
3/7  
TN25 and TYNx25 Series  
Fig. 1: Maximum average power dissipation  
Fig. 2-1: Average and D.C. on-state current  
versus average on-state current.  
versus case temperature.  
IT(av)(A)  
P(W)  
28  
24  
22  
D.C.  
26  
α = 180°  
24  
22  
20  
20  
18  
16  
14  
12  
10  
8
6
4
2
0
18  
16  
14  
12  
10  
8
α = 180°  
360°  
6
4
IT(av)(A)  
10  
α
Tcase(°C)  
50 75  
2
0
0
2
4
6
8
12  
14  
16  
0
25  
100  
125  
Fig. 2-2: Average and D.C. on-state current  
versus ambient temperature (copper surface  
under tab: S = 1 cm² (for D²PAK).  
Fig. 3: Relative variation of thermal impedance  
versus pulse duration.  
IT(av)(A)  
K = [Zth/Rth]  
4.0  
3.5  
1.00  
Zth(j-c)  
D.C.  
3.0  
2.5  
α = 180°  
0.10  
0.01  
Zth(j-a)  
2.0  
1.5  
1.0  
0.5  
tp(s)  
Tamb(°C)  
0.0  
1E-3  
1E-2  
1E-1  
1E+0  
1E+1  
1E+2 5E+2  
0
25  
50  
75  
100  
125  
Fig. 4: Relative variation of gate trigger current,  
holding current and latching current versus  
junction temperature.  
Fig. 5: Surge peak on-state current versus  
number of cycles.  
IGT,IH,IL [Tj] / IGT,IH,IL [Tj = 25 °C]  
ITSM(A)  
2.5  
350  
300  
2.0  
tp = 10ms  
IGT  
250  
One cycle  
Non repetitive  
Tj initial = 25°C  
1.5  
200  
150  
100  
50  
IH & IL  
1.0  
Repetitive  
Tcase = 100 °C  
0.5  
Tj(°C)  
Number of c  
ycles  
100  
0.0  
0
-40 -20  
0
20  
40  
60  
80 100 120 140  
1
10  
1000  
4/7  
TN25 and TYNx25 Series  
Fig. 6: Non-repetitive surge peak on-state  
current for sinusoidal pulse with width  
tp < 10 ms, and corresponding values of I²t.  
Fig. 7: On-state characteristics (maximum  
values).  
a
2
2
ITSM(A),I t(A s)  
ITM(A)  
300  
2000  
1000  
Tj initial = 25°C  
Tj max.:  
Vto = 0.77V  
Rd = 14mΩ  
100  
ITSM  
I2t  
Tj = Tj max.  
dI/dt  
limitattion  
10  
Tj = 25°C  
VTM(V)  
tp(ms)  
1
100  
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5  
0.01  
0.10  
1.00  
10.00  
Fig. 8: Thermal resistance junction to ambient  
versus copper surface under tab (Epoxy printed  
circuit board FR4, copper thickness: 35 µm)  
2
(D PAK).  
Rth(j-a)(°C/W)  
80  
70  
60  
50  
40  
30  
20  
10  
0
2
S(cm )  
0
4
8
12 16 20 24 28 32 36 40  
5/7  
TN25 and TYNx25 Series  
PACKAGE MECHANICAL DATA  
2
D PAK (Plastic)  
DIMENSIONS  
Millimeters  
Min. Typ. Max. Min. Typ. Max.  
REF.  
Inches  
A
E
C2  
L2  
L3  
A
A1  
A2  
B
4.30  
2.49  
0.03  
0.70  
1.25  
0.45  
1.21  
8.95  
10.00  
4.88  
15.00  
1.27  
1.40  
4.60 0.169  
2.69 0.098  
0.23 0.001  
0.93 0.027  
0.181  
0.106  
0.009  
0.037  
D
L
B2  
C
1.40  
0.048 0.055  
0.60 0.017  
1.36 0.047  
9.35 0.352  
10.28 0.393  
5.28 0.192  
15.85 0.590  
1.40 0.050  
1.75 0.055  
0.024  
0.054  
0.368  
0.405  
0.208  
0.624  
0.055  
0.069  
A1  
C2  
D
B2  
B
R
C
E
G
G
L
A2  
2.0 MIN.  
L2  
L3  
R
FLAT ZONE  
0.40  
0.016  
V2  
V2  
0°  
8°  
0°  
8°  
FOOTPRINT DIMENSIONS (in millimeters)  
2
D PAK (Plastic)  
16.90  
10.30  
5.08  
1.30  
3.70  
8.90  
6/7  
TN25 and TYNx25 Series  
PACKAGE MECHANICAL DATA  
TO-220AB (Plastic)  
DIMENSIONS  
REF.  
Millimeters  
Inches  
B
C
b2  
Min. Typ. Max. Min. Typ. Max.  
A
a1  
a2  
B
15.20  
15.90 0.598  
0.625  
L
3.75  
0.147  
F
I
13.00  
10.00  
0.61  
1.23  
4.40  
0.49  
2.40  
2.40  
6.20  
3.75  
14.00 0.511  
10.40 0.393  
0.88 0.024  
1.32 0.048  
4.60 0.173  
0.70 0.019  
2.72 0.094  
2.70 0.094  
6.60 0.244  
3.85 0.147  
0.551  
0.409  
0.034  
0.051  
0.181  
0.027  
0.107  
0.106  
0.259  
0.151  
A
b1  
b2  
C
l4  
c1  
c2  
e
c2  
a1  
l3  
l2  
a2  
F
I
I4  
L
15.80 16.40 16.80 0.622 0.646 0.661  
2.65  
1.14  
1.14  
2.95 0.104  
1.70 0.044  
1.70 0.044  
0.116  
0.066  
0.066  
b1  
M
c1  
l2  
l3  
M
e
2.60  
0.102  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted  
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject  
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not  
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
© The ST logo is a registered trademark of STMicroelectronics  
© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada - China - Finland - France - Germany  
Hong Kong - India - Isreal - Italy - Japan - Malaysia - Malta - Morocco - Singapore  
Spain - Sweden - Switzerland - United Kingdom - United States.  
http://www.st.com  
7/7  

TXN625RG CAD模型

原理图符号

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3D模型

TXN625RG 替代型号

型号 制造商 描述 替代类型 文档
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