概述
规格参数
数据手册U2352B-XFP 概述
Brush DC Motor Controller, BIPolar, PDSO8, SO-8 运动控制电子器件
U2352B-XFP 规格参数
| 生命周期： | Transferred | 包装说明： | SO-8 |
| Reach Compliance Code： | unknown | 风险等级： | 5.62 |
| 模拟集成电路 - 其他类型： | BRUSH DC MOTOR CONTROLLER | JESD-30 代码： | R-PDSO-G8 |
| 功能数量： | 1 | 端子数量： | 8 |
| 最高工作温度： | 100 °C | 最低工作温度： | -10 °C |
| 封装主体材料： | PLASTIC/EPOXY | 封装代码： | SOP |
| 封装形状： | RECTANGULAR | 封装形式： | SMALL OUTLINE |
| 认证状态： | Not Qualified | 最大供电电压 (Vsup)： | 7.2 V |
| 最小供电电压 (Vsup)： | 6.4 V | 标称供电电压 (Vsup)： | 6 V |
| 表面贴装： | YES | 技术： | BIPOLAR |
| 温度等级： | OTHER | 端子形式： | GULL WING |
| 端子位置： | DUAL | Base Number Matches： | 1 |
U2352B-XFP 数据手册
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PDF下载U2352B
PWM Power Control for DC Loads
Description
The U2352B bipolar circuit is a PWM device for control- gives the option of measuring the load current via the
ling logic level Power MOSFETs and IGBTs. It allows MOS transistor’s on-state resistance, R
simple power control for dc loads. Integrated load current shunt resistor.
monitoring with adjustable switch-off threshold also
, or via a
DS(on)
Special Features
Applications
Battery-operated screwdrivers
Battery-operated machine tools
Halogen lamp controllers
Dimmers
Pulse width control up to 50 kHz clock frequency
Load current monitoring via the on-state resistance,
R , of the FET or via shunt resistor (optional)
DS(on)
100 mA push-pull output stage
Voltage monitoring
Electronic fuses
Temperature-compensated supply voltage limitation
Chip temperature monitoring
High-performance clock generators
Package: DIP8, SO8
V
S
2 x I
Reference
voltage
Chip
temperature
monitoring
140°C
S
1
Oscillator
8
Voltage
limitation 6.8 V
1
2
V
S
I
–
Output stage
logic
7
6
K1
+
Push-pull
output stage
Time window
current measurement
Q
S
Q
R
GND
3
4
–
K2
+
Load current
monitoring
POR
5
S
2
95 9670
Figure 1. Block diagram
TELEFUNKEN Semiconductors
1 (8)
Rev. A1, 29-May-96
U2352B
Figure 2. Block diagram with typical circuit
2 (8)
TELEFUNKEN Semiconductors
Rev. A1, 29-May-96
U2352B
Pin Description
Pin
1
Symbol
Osc
Function
1
2
3
4
8
7
6
5
Osc
V
S
Oscillator
2
V
Contr
Control voltage input
V
Output
GND
3
I
Setpoint value current
monitoring
Contr
Set
4
5
6
7
8
S OUT Output, current switch S
2 2
I
Set
S IN
2
Input, current switch S
Ground
2
GND
S OUT
S IN
2
Output
Output
2
V
S
Supply voltage
95 9701
Supply, Pin 8
Pulse Width Control, Pins 1 and 2
Internal voltage limitation in the U2352B allows a simple
At the frequency-determining capacitor, C , at Pin 1,
switching over of two internal current sources gives rise
osc
supply via a series resistor R . This enables operation of
1
the circuit under different operating voltages. Supply
to a triangular voltage which comparator, K , compares
1
voltage between Pin 8 (V ) and Pin 6 (GND) builds up via
S
with the control voltage at Pin 2. If the voltage, V , is
1
R and is smoothed by C .
1
1
more negative than the control voltage V , the output
2
stage is switched on via the output stage logic. When C
is charged, the whole process then runs in reverse order
(see figure 3).
osc
The series resistor R is calculated as follows:
1
VBmin VSmax
R1max
Itot
Load Current Monitoring, Pins 3, 4, 5
where
Load current can be measured with the aid of an external
shunt resistor, but this is only appropriate for decreased
loads due to additional power loss and component size
and costs. This involves the shunt voltage being fed
directly to Pin 4 via a protective resistor (see figure 5).
V
V
= Minimum operating voltage
= Maximum supply voltage
Bmin
Smax
I
I
I
= I + I
Smax X
tot
= Maximum current consumption of the IS
= Current consumption of the external elements
Smax
X
In order to save component costs and additional power
loss, the integrated load current monitoring allows the
load current to be directly measured via the voltage drop
Various thresholds are derived from an internal reference
voltage source.
at the on-state resistance, R
, of the FET, without an
DS(on)
Voltage Monitoring
additional shunt resistor. The drain voltage of the FET is
supplied via an external protective resistor to Pin 5.
During the off-state of the FET, a diode clamp circuit
protects the detection input, Pin 5. In the on state, the load
During build-up and reduction of the operating voltage,
uncontrolled output pulses with excessively low ampli-
tude are suppressed by the internal monitoring circuit. All
latches are reset and the output of the load current detec-
tion Pin 4 is switched to ground.
current flowing through the FET generates
a
corresponding voltage drop at its R
, which is in turn
DS(on)
converted into a current at Pin 5 by the protective resistor.
This current reaches the integration element at Pin 4 via
the switch S , which is only closed in the on-state of the
FET. If the voltage at Pin 4 exceeds the setpoint value set
at Pin 3, as a result of a high load current, the shutdown
latch is set and the output stage is blocked. To enable the
circuit again, it is necessary to switch the operating
voltage off and then back on again.
Chip Temperature Monitoring
2
U2352B has integrated chip temperature monitoring
which switches off the output stage when a temperature
of approximately 140°C is reached. The device is not
enabled again until cooling has taken place and the supply
voltage has been switched off and then back on again.
Switch-off behavior is adjusted with the resistors at Pin 4
and Pin 5 and also with the capacitor at Pin 4.
TELEFUNKEN Semiconductors
3 (8)
Rev. A1, 29-May-96
U2352B
A time space, t, must be observed between switching the time window, the control voltage V is reduced internally
2
output stage off and on and switching S (current about
V = approximately 300 mV and the resulting
2
2
measurement enable switch) in order to avoid incorrect voltage, V *, is compared with the triangular voltage, V
2
1
measurement and incorrect switching-off. To create this (see figure 3).
95 9672
V
0.6
0.3
V
S
V
1
V
2
V
2
V *
2
V
S
V
7
S
2
closed
open
t
t
t
Figure 3. Signal characteristics of pulse width control with time window generation
Absolute Maximum Ratings
Reference point Pin 6, unless otherwise specified
Parameters
Symbol
Value
Unit
mA
Power supply
current
Pin 8
Pin 8
I
40
400
S
S
t < 10 s
i
Push-pull output stage
Output current
t < 2 ms
Pin 7
Pin 7
±I
±i
20
100
mA
mA
O
O
Input currents
Pins 4 and 5
Pins 1 and 3
±I
10
2
I
I
I
Input voltages
Pins 1, 2 and 3
V
I
0 to V
V
8
Storage temperature range
Junction temperature
Ambient temperature
T
–40 to +125
+125
°C
°C
°C
stg
T
j
T
amb
–10 to +100
Thermal Resistance
Parameters
Symbol
Maximum
Unit
K/W
Junction ambient
DIP8
110
220
140
SO8 on PC board
SO8 on ceramic
R
thJA
4 (8)
TELEFUNKEN Semiconductors
Rev. A1, 29-May-96
U2352B
Electrical Characteristics
V = 6 V, T
= 25 C, reference point Pin 6, unless otherwise specified
S
amb
Parameters
Test Conditions / Pins
Symbol
Min.
Typ.
Max.
Unit
V
Supply voltage limitation I = 5 mA
Pin 8
V
S
6.4
6.5
6.8
6.9
7.2
7.3
S
I = 20 mA
S
Current consumption
Voltage monitoring
V = 6 V
S
Pin 8
I
2.7
3.5
mA
V
S
Switch-on threshold
Switch-off threshold
Pin 8
Pin 8
V
V
5.2
4.7
5.6
5.1
6.0
5.5
SON
SOFF
Oscillator
55
COSC [nF]
fOSC [kHz]
Pin 1
VS [V]
Upper threshold (0.6 V )
V
V
–I
3.4
1.7
26
3.6
1.8
33
3.8
1.9
40
V
V
A
A
S
Tu
Lower threshold (0.3 V )
Tl
ch
S
Charge current
Discharge current
I
26
33
40
dis
Control voltage input
Input voltage range
Input current,
Pin 2
Pin 2
Pin 2–1
Pin 2–1
V
±I
±V
Offs
– V
0
V
500
15
V
I
8
0 V ≤ V ≤ V
nA
mV
mV
2
8
i
Offset voltage K
1
Window, current
measurement
260
300
340
2
Load current monitoring
Setpoint value input:
Input voltage range
Input current
Pin 3
V
±I
0
1
6
500
V
nA
I
0 V ≤ V ≤ 6 V Pin 3
3
i
Offset voltage K
Pin 4–3
±V
15
mV
V
2
Offs
Load current detection:
Voltage limitation
Voltage limitation
I = 1 mA
I = –1 mA
Pin 5
Pin 5
Pin 4
V
L
2.3
0.7
5
–V
5
L
Discharge current at POR
I
mA
dis
Switch S
Pin 5–4
2
Residual voltage at closed
switch
V = 0 V, I = 50 A
V
Sat
175
150
125
200
mV
4
5
V = 0.1 V, I = 50 A
4
5
V = 0.3 V, I = 50 A
4
5
V = 0.3 V, I = 100 A
4
5
Push-pull output stage
Upper saturation voltage
Lower saturation voltage
Pin 7
I = –2 mA
Pin 7–8
Pin 7
–V
1
V
V
7
Satu
I = 10 mA
7
V
Satl
0.3
Output current
ON state
OFF state
t ≤ 2 s
t ≤ 2 s
–i
100
100
mA
o
i
o
TELEFUNKEN Semiconductors
5 (8)
Rev. A1, 29-May-96
U2352B
1000
800
R =1M
9
VIN
500K
R
D
= 20 k
100K
50K
600
5
4
20K
400
200
0
S2
10K
5K
95 9673
1000
0
200
400
600
800
VOUT
R9
95 9686
V
( mV )
IN
Figure 4. Typical circuitry of the current switch S2 with associated transfer characteristics (S2 closed)
V
B
R
1
Load
M
D
1
R
2
R
5
82 k
33 k
D , T and R are
1
1
sh
load dependent
C
osc
D
2
1
2
8
7
6
5
D
3
680 pF
Speed
R
47 k
6
T
C
4.7 F
1
68 k
1
R
8
R
G
R
7
C
2
U2352B
R
3
27 k
470 nF
10 k
3
Torque
C
4
4
R
4
95 9674
1k
R
9
1.5 k
C
10 nF
3
R
sh
GND
Figure 5. Speed control with load current monitoring (load current detection via shunt resistor)
6 (8)
TELEFUNKEN Semiconductors
Rev. A1, 29-May-96
U2352B
Dimensions in mm
Package: DIP8
94 8873
Package: SO8
94 8862
TELEFUNKEN Semiconductors
7 (8)
Rev. A1, 29-May-96
U2352B
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
8 (8)
TELEFUNKEN Semiconductors
Rev. A1, 29-May-96
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