概述
规格参数
数据手册
替代型号SN75374DRG4 概述
四路 MOSFET 驱动器 | D | 16 | 0 to 70 MOSFET 驱动器
SN75374DRG4 规格参数
| 是否无铅： | 不含铅 | 是否Rohs认证： | 符合 |
| 生命周期： | Active | 零件包装代码： | SOIC |
| 包装说明： | SOP, SOP16,.25 | 针数： | 16 |
| Reach Compliance Code： | compliant | ECCN代码： | EAR99 |
| HTS代码： | 8542.39.00.01 | Factory Lead Time： | 6 weeks |
| 风险等级： | 5.16 | 其他特性： | ALSO REQUIRES 24V SUPPLY |
| 高边驱动器： | YES | 输入特性： | STANDARD |
| 接口集成电路类型： | NAND GATE BASED MOSFET DRIVER | JESD-30 代码： | R-PDSO-G16 |
| JESD-609代码： | e4 | 长度： | 9.9 mm |
| 湿度敏感等级： | 1 | 功能数量： | 4 |
| 端子数量： | 16 | 最高工作温度： | 70 °C |
| 最低工作温度： | 输出特性： | TOTEM-POLE | |
| 最大输出电流： | 0.5 A | 标称输出峰值电流： | 0.5 A |
| 输出极性： | INVERTED | 封装主体材料： | PLASTIC/EPOXY |
| 封装代码： | SOP | 封装等效代码： | SOP16,.25 |
| 封装形状： | RECTANGULAR | 封装形式： | SMALL OUTLINE |
| 峰值回流温度（摄氏度）： | 260 | 电源： | 5/24 V |
| 认证状态： | Not Qualified | 座面最大高度： | 1.75 mm |
| 子类别： | MOSFET Drivers | 最大压摆率： | 47 mA |
| 最大供电电压： | 5.25 V | 最小供电电压： | 4.75 V |
| 标称供电电压： | 5 V | 电源电压1-最大： | 24 V |
| 电源电压1-分钟： | 4.75 V | 电源电压1-Nom： | 20 V |
| 表面贴装： | YES | 技术： | BIPOLAR |
| 温度等级： | COMMERCIAL | 端子面层： | Nickel/Palladium/Gold (Ni/Pd/Au) |
| 端子形式： | GULL WING | 端子节距： | 1.27 mm |
| 端子位置： | DUAL | 处于峰值回流温度下的最长时间： | NOT SPECIFIED |
| 断开时间： | 0.05 µs | 接通时间： | 0.06 µs |
| 宽度： | 3.9 mm | Base Number Matches： | 1 |
SN75374DRG4 数据手册
通过下载SN75374DRG4数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载ꢀ ꢁꢂ ꢃꢄ ꢂꢅ
ꢆ ꢇꢈꢉꢊ ꢇꢋꢌ ꢍ ꢎ ꢏꢀ ꢐꢍ ꢑ ꢉ ꢊꢒ ꢓ ꢍꢊ
SLRS028A − SEPTEMBER 1988 − REVISED NOVEMBER 2004
D OR N PACKAGE
(TOP VIEW)
D Quadruple Circuits Capable of Driving
High-Capacitance Loads at High Speeds
D Output Supply Voltage Range From 5 V
V
V
1
2
3
4
5
6
7
8
16
15
14
13
CC1
CC2
1Y
to 24 V
4Y
D Low Standby Power Dissipation
4A
1A
1E1
1E2
2A
D V
Supply Maximizes Output Source
Voltage
2E2
CC3
12 2E1
11
10
9
3A
3Y
V
description/ordering information
2Y
GND
CC3
The SN75374 is a quadruple NAND interface
circuit designed to drive power MOSFETs from
TTL inputs. It provides the high current and
voltage necessary to drive large capacitive loads
at high speeds.
The outputs can be switched very close to the V
supply rail when V
is about 3 V higher than V . V
CC2 CC3
CC2
CC3
also can be tied directly to V
when the source voltage requirements are lower.
CC2
ORDERING INFORMATION
ORDERABLE
PART NUMBER
TOP-SIDE
MARKING
†
PACKAGE
T
A
PDIP (N)
SOIC (D)
Tube of 25
Tube of 40
Reel of 2500
SN75374N
SN75374D
SN75374DR
SN75374N
0°C to 70°C
SN75374
†
Package drawings, standard packing quantities, thermal data, symbolization, and PCB design
guidelines are available at www.ti.com/sc/package.
logic diagram (positive logic)
4
1E1
1E2
5
12
2E1
13
3
2E2
1A
2
7
6
2A
3A
4A
10
15
11
14
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
ꢋ
ꢊ
ꢏ
ꢉ
ꢇ
ꢔ
ꢑ
ꢒ
ꢏ
ꢁ
ꢉ
ꢈ
ꢑ
ꢈ
ꢕ
ꢖ
ꢗ
ꢘ
ꢙ
ꢚ
ꢛ
ꢜ
ꢕ
ꢘ
ꢖ
ꢕ
ꢝ
ꢞ
ꢟ
ꢙ
ꢙ
ꢠ
ꢖ
ꢜ
ꢛ
ꢝ
ꢘ
ꢗ
ꢡ
ꢟ
ꢢ
ꢣ
ꢕ
ꢞ
ꢛ
ꢜ
ꢕ
ꢘ
ꢖ
ꢤ
ꢛ
ꢜ
ꢠ
ꢥ
Copyright 2004, Texas Instruments Incorporated
ꢋꢙ ꢘ ꢤꢟꢞ ꢜ ꢝ ꢞ ꢘꢖ ꢗꢘ ꢙ ꢚ ꢜ ꢘ ꢝ ꢡꢠ ꢞ ꢕꢗ ꢕꢞꢛ ꢜꢕ ꢘꢖꢝ ꢡꢠ ꢙ ꢜꢦ ꢠ ꢜꢠ ꢙ ꢚꢝ ꢘꢗ ꢑꢠꢧ ꢛꢝ ꢒꢖꢝ ꢜꢙ ꢟꢚ ꢠꢖꢜ ꢝ
ꢝ ꢜ ꢛ ꢖꢤ ꢛ ꢙꢤ ꢨ ꢛ ꢙꢙ ꢛ ꢖ ꢜꢩꢥ ꢋꢙ ꢘ ꢤꢟꢞ ꢜꢕꢘꢖ ꢡꢙ ꢘꢞ ꢠꢝ ꢝꢕ ꢖꢪ ꢤꢘꢠ ꢝ ꢖꢘꢜ ꢖꢠ ꢞꢠ ꢝꢝ ꢛꢙ ꢕꢣ ꢩ ꢕꢖꢞ ꢣꢟꢤ ꢠ
ꢜ ꢠ ꢝ ꢜꢕ ꢖꢪ ꢘꢗ ꢛ ꢣꢣ ꢡꢛ ꢙ ꢛ ꢚ ꢠ ꢜ ꢠ ꢙ ꢝ ꢥ
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
ꢀ ꢁꢂ ꢃꢄ ꢂ ꢅ
ꢆꢇ ꢈ ꢉꢊ ꢇ ꢋꢌ ꢍ ꢎ ꢏꢀ ꢐꢍ ꢑ ꢉꢊ ꢒ ꢓꢍ ꢊ
SLRS028A − SEPTEMBER 1988 − REVISED NOVEMBER 2004
schematic (each driver)
V
CC1
V
CC3
V
CC2
To Other Drivers
Input A
Enable E1
Output Y
Enable E2
GND
To Other Drivers
†
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage range (see Note 1):V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 V to 7 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 V to 25 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 V to 30 V
CC1
CC2
CC3
V
V
Input voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5 V
I
Peak output current, I (t < 10 ms, duty cycle < 50%) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA
I
w
Package thermal impedance, θ (see Notes 2 and 3): D package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73°C/W
JA
N package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67°C/W
Operating virtual junction temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150°C
J
Storage temperature range, T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C
stg
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. Voltage values are with respect to network ground terminal.
2. Maximum power dissipation is a function of T (max), θ , and T . The maximum allowable power dissipation at any allowable
J
JA
A
ambient temperature is P = (T (max) − T )/θ . Operating at the absolute maximum T of 150°C can affect reliability.
D
J
A
JA
J
3. The package thermal impedance is calculated in accordance with JESD 51-7.
recommended operating conditions
MIN NOM
MAX
5.25
24
UNIT
V
V
V
V
V
V
V
Supply voltage
4.75
4.75
5
20
24
4
CC1
CC2
CC3
Supply voltage
V
Supply voltage
V
28
V
CC2
0
− V
Voltage difference between supply voltages
High-level input voltage
Low-level input voltage
High-level output current
Low-level output current
Operating free-air temperature
10
V
CC3 CC2
2
V
IH
IL
0.8
−10
40
V
I
I
mA
mA
°C
OH
OL
T
A
0
70
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
ꢀ ꢁꢂ ꢃꢄ ꢂꢅ
ꢆ ꢇꢈꢉꢊ ꢇꢋꢌ ꢍ ꢎ ꢏꢀ ꢐꢍꢑ ꢉ ꢊꢒ ꢓ ꢍꢊ
SLRS028A − SEPTEMBER 1988 − REVISED NOVEMBER 2004
electrical characteristics over recommended ranges of V
temperature (unless otherwise noted)
, V
, V
, and operating free-air
CC1 CC2 CC3
†
TYP
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
V
V
Input clamp voltage
I = −12 mA
−1.5
V
IK
I
−
V
V
V
V
V
V
= V
= V
= V
= V
+ 3 V,
+ 3 V,
V
V
V
V
= 0.8 V,
= 0.8 V,
= 0.8 V,
= 0.8 V,
= 10 mA
= 2 V,
I
I
I
I
= −100 µA
= −10 mA
= −50 µA
= −10 mA
V
V
− 0.3
− 1.3
V
0.1
− 0.9
− 0.7
− 1.8
0.15
CC3
CC3
CC3
CC3
CC2
CC2
CC2
CC2
IL
OH
OH
OH
OH
CC2
CC2
CC2
CC2
CC2
V
V
V
IL
CC2
High-level output voltage
V
OH
,
,
V
− 1
IL
CC2
V
CC2
− 2.5
IL
= 2 V,
I
0.3
0.5
IH
OL
V
V
Low-level output voltage
V
V
OL
= 15 V to 28 V,
V
IH
I
= 40 mA
0.25
CC2
OL
Output clamp-diode
forward voltage
V = 0,
I
I
F
= 20 mA
1.5
1
F
Input current at
maximum input voltage
I
I
V = 5.5 V
I
mA
µA
Any A
Any E
Any A
Any E
40
80
High-level
input current
I
IH
V = 2.4 V
I
−1
−2
−1.6
−3.2
Low-level
input current
I
I
I
I
I
I
I
V = 0.4 V
I
mA
IL
Supply current from
, all outputs high
4
−2.2
2.2
8
0.25
3.5
47
CC1(H)
CC2(H)
CC3(H)
CC1(L)
CC2(L)
CC3(L)
V
CC1
Supply current from
, all outputs high
V
= 5.25 V,
V
= 24 V,
V
V
= 28 V,
CC1
All inputs at 0 V,
CC2
No load
CC3
CC3
mA
V
CC2
Supply current from
, all outputs high
V
CC3
Supply current from
, all outputs low
31
V
CC1
Supply current from
, all outputs low
V
= 5.25 V,
V
= 24 V,
= 28 V,
CC1
All inputs at 5 V,
CC2
No load
2
mA
V
CC2
Supply current from
, all outputs low
16
27
V
CC1
Supply current from
, all outputs high
I
I
0.25
0.5
CC2(H)
V
CC2
Supply current from
, all outputs high
V
= 5.25 V,
V
= 24 V,
V
V
= 24 V,
= 24 V,
CC1
All inputs at 0 V,
CC2
No load
CC3
CC3
mA
mA
CC3(H)
V
CC3
Supply current from
, standby condition
I
I
0.25
0.5
CC2(S)
V
CC2
Supply current from
, standby condition
V
= 0,
V
= 24 V,
CC1
All inputs at 0 V,
CC2
No load
CC3(S)
V
CC3
†
All typical values are at V
conditions.
= 5 V, V
CC2
= 20 V, V
CC3
= 24 V, and T = 25°C, except for V
OH
for which V
and V
are as stated under test
CC1
A
CC2
CC3
switching characteristics, V
= 5 V, V
= 20 V, V
= 24 V, T = 25°C
CC1
CC2
CC3
A
PARAMETER
Delay time, low- to high-level output
Delay time, high- to low-level output
TEST CONDITIONS
MIN
TYP
MAX
30
UNIT
ns
t
t
t
t
t
t
20
10
40
30
20
20
DLH
DHL
PLH
PHL
TLH
THL
20
ns
C
R
= 200 pF,
= 24 Ω,
L
D
Propagation delay time, low- to high-level output
Propagation delay time, high- to low-level output
Transition time, low- to high-level output
10
10
60
ns
50
ns
See Figure 1
30
ns
Transition time, high- to low-level output
30
ns
3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
ꢀ ꢁꢂ ꢃꢄ ꢂ ꢅ
ꢆꢇ ꢈ ꢉꢊ ꢇ ꢋꢌ ꢍ ꢎ ꢏꢀ ꢐꢍ ꢑ ꢉꢊ ꢒ ꢓꢍ ꢊ
SLRS028A − SEPTEMBER 1988 − REVISED NOVEMBER 2004
PARAMETER MEASUREMENT INFORMATION
24 V
20 V
5 V
Input
2.4 V
V
CC1
V
V
CC2
CC3
R
D
Pulse
Generator
(see Note A)
Output
= 200 pF
(see Note B)
C
L
GND
TEST CIRCUIT
≤10 ns
≤10 ns
3 V
0 V
90%
1.5 V
90%
Input
1.5 V
0.5 µs
t
10%
10%
PHL
t
DHL
t
PLH
t
TLH
t
THL
V
V
OH
V
CC2
− 2 V
V
CC2
− 2 V
t
DLH
Output
2 V
2 V
OL
VOLTAGE WAVEFORMS
NOTES: A. The pulse generator has the following characteristics: PRR = 1 MHz, Z ≈ 50 Ω.
O
B.
C includes probe and jig capacitance.
L
Figure 1. Test Circuit and Voltage Waveforms, Each Driver
4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
ꢀ ꢁꢂ ꢃꢄ ꢂꢅ
ꢆ ꢇꢈꢉꢊ ꢇꢋꢌ ꢍ ꢎ ꢏꢀ ꢐꢍꢑ ꢉ ꢊꢒ ꢓ ꢍꢊ
SLRS028A − SEPTEMBER 1988 − REVISED NOVEMBER 2004
TYPICAL CHARACTERISTICS
HIGH-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT CURRENT
HIGH-LEVEL OUTPUT CURRENT
V
V
CC2
CC2
V
V
= 5 V
= V
CC3
CC1
CC2
= 20 V
V1 = 0.8 V
− 0.5
−0.5
T
= 70°C
= 0°C
A
− 1
− 1.5
− 2
−1
−1.5
−2
T
A
T
= 25°C
A
T
A
= 70°C
T
A
= 0°C
V
V
V
= 5 V
= 20 V
= 24 V
CC1
CC2
CC3
− 2.5
− 3
−2.5
−3
V = 0.8 V
I
− 0.01
− 0.1
− 1
− 10
− 100
−0.01
−0.1
−1
−10
−100
I
− High-Level Output Current − mA
I
− High-Level Output Current − mA
OH
OH
Figure 2
Figure 3
LOW-LEVEL OUTPUT VOLTAGE
vs
VOLTAGE TRANSFER CHARACTERISTICS
LOW-LEVEL OUTPUT CURRENT
0.5
0.4
0.3
0.2
0.1
0
24
20
16
12
8
V
V
V
= 5 V
= 20 V
= 24 V
CC1
CC2
CC3
V = 2 V
I
T
A
= 70°C
T
A
= 0°C
V
V
V
= 5 V
= 20 V
= 24 V
CC1
CC2
CC3
4
T
= 25°C
A
No Load
0
0
0
20
40
60
80
100
0.5
1
1.5
2
2.5
I
− Low-Level Output Current − mA
V − Input Voltage − V
I
OL
Figure 4
Figure 5
5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
ꢀ ꢁꢂ ꢃꢄ ꢂ ꢅ
ꢆꢇ ꢈ ꢉꢊ ꢇ ꢋꢌ ꢍ ꢎ ꢏꢀ ꢐꢍ ꢑ ꢉꢊ ꢒ ꢓꢍ ꢊ
SLRS028A − SEPTEMBER 1988 − REVISED NOVEMBER 2004
TYPICAL CHARACTERISTICS
PROPAGATION DELAY TIME
LOW- TO HIGH-LEVEL OUTPUT
vs
PROPAGATION DELAY TIME
HIGH- TO LOW-LEVEL OUTPUT
vs
FREE-AIR TEMPERATURE
FREE-AIR TEMPERATURE
250
225
200
175
150
125
100
75
250
225
200
175
150
125
100
75
C
= 4000 pF
L
V
V
V
= 5 V
= 20 V
= 24 V
C
= 4000 pF
= 2000 pF
CC1
CC2
CC3
L
V
V
V
= 5V
= 20V
= 24V
R
= 24 Ω
CC1
CC2
CC3
D
See Figure 1
C
C
= 2000 pF
= 1000 pF
L
L
R = 24 Ω
See Figure 1
D
C
C
L
L
= 1000 pF
= 200 pF
50
50
C
C
= 200 pF
= 50 pF
C
L
L
L
25
0
25
0
C
= 50 pF
L
0
10
20
30
40
50
60
70
80
0
10
20
30
40
50
60
70
80
T
A
− Free-Air Temperature − °C
T
A
− Free-Air Temperature − °C
Figure 6
Figure 7
PROPAGATION DELAY TIME
PROPAGATION DELAY TIME
LOW-TO HIGH-LEVEL OUTPUT
vs
HIGH- TO LOW-LEVEL OUTPUT
vs
V
SUPPLY VOLTAGE
V
SUPPLY VOLTAGE
CC2
CC2
250
250
225
200
175
150
125
100
75
V
= 5 V
= V
= 24 Ω
= 25°C
CC1
V
V
= 5 V
CC1
V
R
+ 4 V
225
200
175
150
125
100
75
CC3 CC2
= V
+ 4 V
CC3 CC2
C
= 4000 pF
L
D
C = 4000 pF
L
R
T
A
= 24 Ω
= 25°C
D
T
A
See Figure 1
See Figure 1
C
= 2000 pF
C = 2000 pF
L
L
C
= 1000 pF
= 200 pF
L
C
= 1000 pF
L
50
50
C
C
= 50 pF
C
= 200 pF
L
C
= 50 pF
5
L
L
L
25
0
25
0
0
5
10
15
20
25
0
10
15
20
25
V
CC2
− Supply Voltage − V
V
CC2
− Supply Voltage − V
Figure 8
Figure 9
6
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
ꢀ ꢁꢂ ꢃꢄ ꢂꢅ
ꢆ ꢇꢈꢉꢊ ꢇꢋꢌ ꢍ ꢎ ꢏꢀ ꢐꢍꢑ ꢉ ꢊꢒ ꢓ ꢍꢊ
SLRS028A − SEPTEMBER 1988 − REVISED NOVEMBER 2004
TYPICAL CHARACTERISTICS
PROPAGATION DELAY TIME
LOW- TO HIGH-LEVEL OUTPUT
vs
PROPAGATION DELAY TIME
HIGH- TO LOW-LEVEL OUTPUT
vs
LOAD CAPACITANCE
LOAD CAPACITANCE
250
225
200
175
150
125
100
75
250
225
200
175
150
125
100
75
V
V
V
T
= 5 V
= 20 V
= 24 V
V
V
V
T
= 5 V
= 20 V
= 24 V
CC1
CC2
CC3
CC1
CC2
CC3
= 25°C
= 25°C
A
A
See Figure 1
See Figure 1
R
R
= 24 Ω
= 10 Ω
R
R
= 24 Ω
= 10 Ω
D
D
D
D
R
= 0
R
= 0
D
D
50
50
25
25
0
0
0
1000
2000
3000
4000
0
1000
C
2000
− Load Capacitance − pF
L
3000
4000
C
− Load Capacitance − pF
L
Figure 10
Figure 11
POWER DISSIPATION (ALL DRIVERS)
vs
FREQUENCY
V
CC1
V
CC2
V
CC3
= 5 V
= 20 V
= 24 V
Input: 3-V Square Wave
(50% duty cycle)
2000
1800
1600
T
= 25°C
A
C
= 600 pF
L
1400
1200
C
= 1000 pF
L
C
= 2000 pF
L
1000
800
600
400
C
= 4000 pF
L
C
= 400 pF
400
L
200
0
10
20
40
70 100
200
1000
f − Frequency − kHz
Figure 12
NOTE: For R = 0, operation with C > 2000 pF violates absolute maximum current rating.
D
L
7
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
ꢀ ꢁꢂ ꢃꢄ ꢂ ꢅ
ꢆꢇ ꢈ ꢉꢊ ꢇ ꢋꢌ ꢍ ꢎ ꢏꢀ ꢐꢍ ꢑ ꢉꢊ ꢒ ꢓꢍ ꢊ
SLRS028A − SEPTEMBER 1988 − REVISED NOVEMBER 2004
THERMAL INFORMATION
power-dissipation precautions
Significant power may be dissipated in the SN75374 driver when charging and discharging high-capacitance
loads over a wide voltage range at high frequencies. Figure 12 shows the power dissipated in a typical SN75374
as a function of frequency and load capacitance. Average power dissipated by this driver is derived from the
equation:
P
= P
+ P
+ P
T(AV)
DC(AV)
C(AV) S(AV)
where P
is the steady-state power dissipation with the output high or low, P
is the power level during
DC(AV)
C(AV)
charging or discharging of the load capacitance, and P
is the power dissipation during switching between
S(AV)
the low and high levels. None of these include energy transferred to the load, and all are averaged over a full
cycle.
The power components per driver channel are:
(
PHtH ) PLtL
+
)
PDC(AV)
T
f
C(AV) [ CV2
c
P
(
PLHtLH ) PHLtHL
+
)
PS(AV)
T
where the times are as defined in Figure 15.
t
LH
t
HL
t
H
t
L
T = 1/f
Figure 13. Output-Voltage Waveform
8
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
ꢀ ꢁꢂ ꢃꢄ ꢂꢅ
ꢆ ꢇꢈꢉꢊ ꢇꢋꢌ ꢍ ꢎ ꢏꢀ ꢐꢍꢑ ꢉ ꢊꢒ ꢓ ꢍꢊ
SLRS028A − SEPTEMBER 1988 − REVISED NOVEMBER 2004
THERMAL INFORMATION
power-dissipation precautions (continued)
P , P , P , and P are the respective instantaneous levels of power dissipation, and C is the load capacitance.
L
H
LH
HL
V is the voltage across the load capacitance during the charge cycle shown by the equation:
C
V = V
− V
OL
C
OH
P
may be ignored for power calculations at low frequencies.
S(AV)
In the following power calculation, all four channels are operating under identical conditions: f = 0.2 MHz,
= 19.9 V and V = 0.15 V with V = 5 V, V = 20 V, V = 24 V, V = 19.75 V, C = 1000 pF, and the
V
OH
OL
CC1
CC2
S(AV)
CC3
C
duty cycle = 60%. At 0.2 MHz for C < 2000 pF, P
is low, I
is negligible and can be ignored. When the output voltage
L
is negligible and can be ignored.
CC2
On a per-channel basis using data-sheet values,
ǒ4 mAǓ ) 20 Vǒ−2.2 mAǓ ) 24 Vǒ2.2 mA
Ǔ
ƫ
0.6 )
+ ƪ
P
5 V
DC(AV)
4
4
4
ǒ31 mAǓ ) 20 Vǒ0 mAǓ ) 24 Vǒ16 mA
Ǔ
ƫ
0.4
ƪ
5 V
4
4
4
P
= 58.2 mW per channel
DC(AV)
Power during the charging time of the load capacitance is
2
P
= (1000 pF)(19.75 V) (0.2 MHz) = 78 mW per channel
C(AV)
Total power for each driver is:
= 58.2 mW + 78 mW = 136.2 mW
P
T(AV)
The total package power is:
= (136.2)(4) = 544.8 mW
P
T(AV)
9
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
ꢀ ꢁꢂ ꢃꢄ ꢂ ꢅ
ꢆꢇ ꢈ ꢉꢊ ꢇ ꢋꢌ ꢍ ꢎ ꢏꢀ ꢐꢍ ꢑ ꢉꢊ ꢒ ꢓꢍ ꢊ
SLRS028A − SEPTEMBER 1988 − REVISED NOVEMBER 2004
APPLICATION INFORMATION
driving power MOSFETs
The drive requirements of power MOSFETs are much lower than comparable bipolar power transistors. The
input impedance of an FET consists of a reverse-biased PN junction that can be described as a large
capacitance in parallel with a very high resistance. For this reason, the commonly used open-collector driver
with a pullup resistor is not satisfactory for high-speed applications. In Figure 14a, an IRF151 power MOSFET
switching an inductive load is driven by an open-collector transistor driver with a 470-Ω pullup resistor. The input
capacitance (C ) specification for an IRF151 is 4000 pF maximum. The resulting long turn-on time, due to the
ISS
product of input capacitance and the pullup resistor, is shown in Figure 14b.
48 V
5 V
M
4
470 Ω
3
2
4
8
IRF151
7
3
5
TLC555
1
0
6
2
1
1/2 SN75447
0
0.5
1
1.5
2
2.5
3
t − Time − µs
(a)
(b)
Figure 14. Power MOSFET Drive Using SN75447
A faster, more efficient drive circuit uses an active pullup, as well as an active pulldown output configuration,
referred to as a totem-pole output. The SN75374 driver provides the high-speed totem-pole drive desired in an
application of this type (see Figure 15a). The resulting faster switching speeds are shown in Figure 15b.
48 V
5 V
M
4
3
2
1
0
4
8
7
3
5
TLC555
IRF151
6
1/4 SN75374
2
1
0
0.5
1
1.5
2
2.5
3
t − Time − µs
(a)
(b)
Figure 15. Power MOSFET Drive Using SN75374
10
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
ꢀ ꢁꢂ ꢃꢄ ꢂꢅ
ꢆ ꢇꢈꢉꢊ ꢇꢋꢌ ꢍ ꢎ ꢏꢀ ꢐꢍꢑ ꢉ ꢊꢒ ꢓ ꢍꢊ
SLRS028A − SEPTEMBER 1988 − REVISED NOVEMBER 2004
APPLICATION INFORMATION
driving power MOSFETs (continued)
Power MOSFET drivers must be capable of supplying high peak currents to achieve fast switching speeds as
shown by the equation:
VC
+
I
PK
t
r
where C is the capacitive load and t is the desired rise time. V is the voltage that the capacitance is charged
r
to. In the circuit shown in Figure 14a, V is found by the equation:
V = V
− V
OL
OH
Peak current required to maintain a rise time of 100 ns in the circuit of Figure 14a is:
−9
(3 * 0)4(10 )
I
+
+ 120 mA
PK
−9
100(10 )
Circuit capacitance can be ignored because it is very small compared to the input capacitance of the IRF151.
With a V of 5 V and assuming worst-case conditions, the gate drive voltage is 3 V.
CC
For applications in which the full voltage of V
must be supplied to the MOSFET gate, V
should be at least
CC2
CC3
3 V higher than V
.
CC2
11
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
PACKAGE OPTION ADDENDUM
www.ti.com
18-Jul-2006
PACKAGING INFORMATION
Orderable Device
SN75374D
Status (1)
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
Package Package
Pins Package Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)
Qty
Type
Drawing
SOIC
D
16
16
16
16
16
16
40 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
SN75374DE4
SN75374DR
SN75374DRE4
SN75374N
SOIC
SOIC
SOIC
PDIP
PDIP
D
D
D
N
N
40 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
2500 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
2500 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
25
Pb-Free
(RoHS)
CU NIPDAU N / A for Pkg Type
SN75374NE4
25
Pb-Free
(RoHS)
CU NIPDAU N / A for Pkg Type
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
Addendum-Page 1
IMPORTANT NOTICE
Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications,
enhancements, improvements, and other changes to its products and services at any time and to discontinue
any product or service without notice. Customers should obtain the latest relevant information before placing
orders and should verify that such information is current and complete. All products are sold subject to TI’s terms
and conditions of sale supplied at the time of order acknowledgment.
TI warrants performance of its hardware products to the specifications applicable at the time of sale in
accordance with TI’s standard warranty. Testing and other quality control techniques are used to the extent TI
deems necessary to support this warranty. Except where mandated by government requirements, testing of all
parameters of each product is not necessarily performed.
TI assumes no liability for applications assistance or customer product design. Customers are responsible for
their products and applications using TI components. To minimize the risks associated with customer products
and applications, customers should provide adequate design and operating safeguards.
TI does not warrant or represent that any license, either express or implied, is granted under any TI patent right,
copyright, mask work right, or other TI intellectual property right relating to any combination, machine, or process
in which TI products or services are used. Information published by TI regarding third-party products or services
does not constitute a license from TI to use such products or services or a warranty or endorsement thereof.
Use of such information may require a license from a third party under the patents or other intellectual property
of the third party, or a license from TI under the patents or other intellectual property of TI.
Reproduction of information in TI data books or data sheets is permissible only if reproduction is without
alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction
of this information with alteration is an unfair and deceptive business practice. TI is not responsible or liable for
such altered documentation.
Resale of TI products or services with statements different from or beyond the parameters stated by TI for that
product or service voids all express and any implied warranties for the associated TI product or service and
is an unfair and deceptive business practice. TI is not responsible or liable for any such statements.
Following are URLs where you can obtain information on other Texas Instruments products and application
solutions:
Products
Applications
Audio
Amplifiers
amplifier.ti.com
www.ti.com/audio
Data Converters
dataconverter.ti.com
Automotive
www.ti.com/automotive
DSP
dsp.ti.com
Broadband
Digital Control
Military
www.ti.com/broadband
www.ti.com/digitalcontrol
www.ti.com/military
Interface
Logic
interface.ti.com
logic.ti.com
Power Mgmt
Microcontrollers
power.ti.com
Optical Networking
Security
www.ti.com/opticalnetwork
www.ti.com/security
www.ti.com/telephony
www.ti.com/video
microcontroller.ti.com
Low Power Wireless www.ti.com/lpw
Telephony
Video & Imaging
Wireless
www.ti.com/wireless
Mailing Address:
Texas Instruments
Post Office Box 655303 Dallas, Texas 75265
Copyright 2006, Texas Instruments Incorporated
SN75374DRG4 CAD模型
引脚图
封装焊盘图
SN75374DRG4 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| SN75374N | TI | QUADRUPLE MOSFET DRIVER | 获取价格 |
|
| SN75374N-00 | TI | 0.5A 4 CHANNEL, NAND GATE BASED MOSFET DRIVER, PDIP16 | 获取价格 |
|
| SN75374NE4 | TI | QUADRUPLE MOSFET DRIVER | 获取价格 |
|
| SN75374_06 | TI | QUADRUPLE MOSFET DRIVER | 获取价格 |
|
| SN75403NE | TI | IC,PERIPHERAL DRIVER,2 DRIVER,BIPOLAR,DIP,14PIN,PLASTIC | 获取价格 |
|
| SN75403NEP3 | TI | IC IC,PERIPHERAL DRIVER,2 DRIVER,BIPOLAR,DIP,14PIN,PLASTIC, Peripheral Driver | 获取价格 |
|
| SN75423 | TI | HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS | 获取价格 |
|
| SN75423N | TI | HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS | 获取价格 |
|
| SN75423N-90 | TI | HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS | 获取价格 |
|
| SN75424 | TI | HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS | 获取价格 |
|
SN75374DRG4 相关文章
苹果Apple Intelligence适配百度AI模型遇技术挑战
- 2024-12-05
- 12
苹果携手亚马逊，定制AI芯片助力Apple Intelligence模型训练
- 2024-12-05
- 10
革命性突破：光衍射极限下微型步行机器人成功面世
- 2024-12-05
- 12
Soitec将为格罗方德9SW平台供应300mm RF-SOI晶圆
- 2024-12-05
- 11
