概述
规格参数
数据手册TPS2814Y 概述
2A 2 CHANNEL, NAND GATE BASED MOSFET DRIVER, UUC8, DIE-8 MOSFET 驱动器
TPS2814Y 规格参数
| 生命周期： | Obsolete | 零件包装代码： | DIE |
| 包装说明： | DIE, | 针数： | 8 |
| Reach Compliance Code： | unknown | ECCN代码： | EAR99 |
| HTS代码： | 8542.39.00.01 | 风险等级： | 5.65 |
| 高边驱动器： | YES | 输入特性： | SCHMITT TRIGGER |
| 接口集成电路类型： | NAND GATE BASED MOSFET DRIVER | JESD-30 代码： | R-XUUC-N8 |
| 功能数量： | 2 | 端子数量： | 8 |
| 最高工作温度： | 125 °C | 最低工作温度： | -40 °C |
| 输出特性： | TOTEM-POLE | 标称输出峰值电流： | 2 A |
| 封装主体材料： | UNSPECIFIED | 封装代码： | DIE |
| 封装形状： | RECTANGULAR | 封装形式： | UNCASED CHIP |
| 认证状态： | Not Qualified | 最大供电电压： | 14 V |
| 最小供电电压： | 4 V | 标称供电电压： | 10 V |
| 表面贴装： | YES | 技术： | BIMOS |
| 温度等级： | AUTOMOTIVE | 端子形式： | NO LEAD |
| 端子位置： | UPPER | 断开时间： | 0.05 µs |
| 接通时间： | 0.05 µs | Base Number Matches： | 1 |
TPS2814Y 数据手册
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PDF下载TPS2811, TPS2812, TPS2813, TPS2814, TPS2815
DUAL HIGH-SPEED MOSFET DRIVERS
SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997
TPS2811, TPS2812, TPS2813 . . . D, P, AND PW
Industry-Standard Driver Replacement
25-ns Max Rise/Fall Times and 40-ns Max
PACKAGES
(TOP VIEW)
Propagation Delay – 1-nF Load, V
= 14 V
CC
REG_IN
1IN
REG_OUT
1OUT
1
2
3
4
8
7
6
5
2-A Peak Output Current, V
= 14 V
CC
5-µA Supply Current — Input High or Low
GND
2IN
V
CC
4-V to 14-V Supply-Voltage Range; Internal
Regulator Extends Range to 40 V (TPS2811,
TPS2812, TPS2813)
2OUT
TPS2814 . . . D, P, AND PW PACKAGES
(TOP VIEW)
–40°C to 125°C Ambient-Temperature
Operating Range
1IN1
1IN2
2IN1
2IN2
GND
1
2
3
4
8
7
6
5
description
1OUT
V
The TPS28xx series of dual high-speed MOSFET
drivers are capable of delivering peak currents of
2 A into highly capacitive loads. This performance
is achieved with a design that inherently
minimizes shoot-through current and consumes
an order of magnitude less supply current than
competitive products.
CC
2OUT
TPS2815 . . . D, P, AND PW PACKAGES
(TOP VIEW)
1IN1
1IN2
2IN1
2IN2
GND
1
2
3
4
8
7
6
5
1OUT
The TPS2811, TPS2812, and TPS2813 drivers
include a regulator to allow operation with supply
inputs between 14 V and 40 V. The regulator
output can power other circuitry, provided power
V
CC
2OUT
dissipation does not exceed package limitations. When the regulator is not required, REG_IN and REG_OUT
can be left disconnected or both can be connected to V
or GND.
CC
The TPS2814 and the TPS2815 have 2-input gates that give the user greater flexibility in controlling the
MOSFET. The TPS2814 has AND input gates with one inverting input. The TPS2815 has dual-input NAND
gates.
TPS28xx series drivers, available in 8-pin PDIP, SOIC, and TSSOP packages and as unmounted ICs, operate
over a ambient temperature range of –40°C to 125°C.
AVAILABLE OPTIONS
PACKAGED DEVICES
CHIP
INTERNAL
REGULATOR
SMALL
OUTLINE
(D)
PLASTIC
DIP
FORM
(Y)
T
A
LOGIC FUNCTION
TSSOP (PW)
(P)
Dual inverting drivers
Dual noninverting drivers
One inverting and one noninverting driver
TPS2811D TPS2811P TPS2811PWLE TPS2811Y
TPS2812D TPS2812P TPS2812PWLE TPS2812Y
TPS2813D TPS2813P TPS2813PWLE TPS2813Y
Yes
No
–40°C
to
125°C
Dual 2-input AND drivers, one inverting input on TPS2814D TPS2814P TPS2814PWLE TPS2814Y
each driver
Dual 2-input NAND drivers
TPS2815D TPS2815P TPS2815PWLE TPS2815Y
The D package is available taped and reeled. Add R suffix to device type (e.g., TPS2811DR). The PW package is only available left-end
taped and reeled and is indicated by the LE suffix on the device type (e.g., TPS2811PWLE).
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright 1997, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPS2811, TPS2812, TPS2813, TPS2814, TPS2815
DUAL HIGH-SPEED MOSFET DRIVERS
SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997
regulator diagram (TPS2811, TPS2812,
functional block diagram
TPS2813 only)
REG_IN
TPS2811
1
2
8
6
Regulator
REG_OUT
REG_IN
1IN
V
CC
7
5
1OUT
2OUT
4
3
2IN
GND
7.5 Ω
REG_OUT
TPS2812
Regulator
1
2
8
6
REG_OUT
REG_IN
1IN
V
CC
7
5
1OUT
2OUT
4
3
2IN
GND
input stage diagram
V
CC
TPS2813
Regulator
1
2
8
6
REG_OUT
REG_IN
1IN
V
CC
7
5
1OUT
2OUT
4
3
2IN
To Drive
Stage
IN
GND
TPS2814
6
7
V
CC
1
2
1IN1
1IN2
1OUT
2OUT
3
4
2IN1
2IN2
5
output stage diagram
V
CC
8
GND
Predrive
TPS2815
6
7
V
CC
1
2
1IN1
1IN2
1OUT
2OUT
3
4
8
OUT
2IN1
2IN2
GND
5
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPS2811, TPS2812, TPS2813, TPS2814, TPS2815
DUAL HIGH-SPEED MOSFET DRIVERS
SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997
TPS28xxY chip information
This chip, when properly assembled, displays characteristics similar to those of the TPS28xx. Thermal
compression or ultrasonic bonding may be used on the doped aluminum bonding pads. The chip may be
mounted with conductive epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
(8)
(8)
(7)
REG_OUT
1OUT
(1)
(2)
(4)
REG_IN
1IN
TPS2811Y
TPS2812Y
TPS2813Y
(6)
(5)
(1)
V
CC
2IN
2OUT
(3)
(7)
GND
(1)
(2)
(2)
(7)
(6)
1IN1
1IN2
1OUT
V
CC
TPS2814Y
(3)
(4)
2IN1
2IN2
(5)
2OUT
(8)
57
(6)
GND
(1)
(2)
(7)
(6)
1IN1
1IN2
1OUT
(3)
TPS2815Y
V
CC
(3)
(4)
2IN1
2IN2
(5)
2OUT
(5)
(8)
GND
(4)
CHIP THICKNESS: 15 MILS TYPICAL
BONDING PADS: 4 × 4 MILS MINIMUM
47
T max OPERATING TEMPERATURE = 150°C
J
TOLERANCES ARE ±10%.
ALL DIMENSIONS ARE IN MILS.
3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPS2811, TPS2812, TPS2813, TPS2814, TPS2815
DUAL HIGH-SPEED MOSFET DRIVERS
SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997
Terminal Functions
TPS2811, TPS2812, TPS2813
TERMINAL NUMBERS
TERMINAL
NAME
TPS2811
Dual Inverting
Drivers
TPS2812
Dual Noninverting
Drivers
TPS2813
Complimentary
Drivers
DESCRIPTION
REG_IN
1
1
1
Regulator input
Input 1
1IN
2
2
2
GND
2IN
3
3
3
Ground
4
5 = 2IN
6
4
5 = 2IN
6
4
5 = 2IN
6
Input 2
2OUT
Output 2
V
CC
Supply voltage
Output 1
1OUT
7 = 1IN
8
7 = 1IN
8
7 = 1IN
8
REG_OUT
Regulator output
TPS2814, TPS2815
TERMINAL NUMBERS
TERMINAL
NAME
TPS2814
Dual AND Drivers with Single
Inverting Input
DESCRIPTION
TPS2815
Dual NAND Drivers
1IN1
1IN2
1IN2
2IN1
2IN2
2IN2
1
1
Noninverting input 1 of driver 1
Inverting input 2 of driver 1
Noninverting input 2 of driver 1
Noninverting input 1 of driver 2
Inverting input 2 of driver 2
Noninverting input 2 of driver 2
Output 2
2
-
-
2
3
3
4
-
-
4
2OUT
5 = 2IN1 • 2IN2
5 = 2IN1 • 2IN2
V
CC
6
6
Supply voltage
1OUT
GND
7 = 1IN1 • 1IN2
7 = 1IN1 • 1IN2
Output 1
8
8
Ground
DISSIPATION RATING TABLE
DERATING FACTOR
T
≤ 25°C
T
A
= 70°C
T = 85°C
A
A
PACKAGE
POWER RATING
ABOVE T = 25°C
POWER RATING POWER RATING
A
P
D
1090 mW
8.74 mW/°C
5.84 mW/°C
4.17 mW/°C
697 mW
467 mW
332 mW
566 mW
380 mW
270 mW
730 mW
PW
520 mW
4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPS2811, TPS2812, TPS2813, TPS2814, TPS2815
DUAL HIGH-SPEED MOSFET DRIVERS
SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997
†
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Regulator input voltage range, REG_IN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 42 V
Supply voltage, V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 15 V
CC
Input voltage range, 1IN, 2IN, 1IN1, 1IN2, 1IN2, 2IN1, 2IN2, 2IN2 . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to V
CC
Continuous regulator output current, REG_OUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 mA
Continuous output current, 1OUT, 2OUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±100 mA
Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table
Operating ambient temperature range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to 125°C
A
Storage temperature range, T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to 150°C
stg
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltages are with respect to device GND pin.
recommended operating conditions
MIN
8
MAX
40
UNIT
V
Regulator input voltage range
Supply voltage, V
4
14
V
CC
Input voltage, 1IN1, 1IN2, 1IN2, 2IN1, 2IN2, 2IN2, 1IN, 2IN
Continuous regulator output current, REG_OUT
Ambient temperature operating range
–0.3
0
V
V
CC
20
mA
°C
–40
125
TPS28xx electrical characteristics over recommended operating ambient temperature range,
= 10 V, REG_IN open for TPS2811/12/13, C = 1 nF (unless otherwise noted)
V
CC
L
inputs
†
PARAMETER
TEST CONDITIONS
MIN TYP
MAX
4
UNIT
V
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
= 5 V
3.3
5.8
8.3
1.6
4.2
6.2
1.6
0.2
5
Positive-going input threshold voltage
Negative-going input threshold voltage
= 10 V
= 14 V
= 5 V
9
V
13
V
1
1
1
V
= 10 V
= 14 V
= 5 V
V
V
Input hysteresis
Input current
V
Inputs = 0 V or V
–1
1
µA
pF
CC
Input capacitance
10
†
Typicals are for T = 25°C unless otherwise noted.
A
outputs
†
PARAMETER
TEST CONDITIONS
MIN TYP
MAX
UNIT
I
I
I
I
= –1 mA
= –100 mA
= 1 mA
9.75
8
9.9
9.1
0.18
1
O
O
O
O
High-level output voltage
V
0.25
2
Low-level output voltage
Peak output current
V
A
= 100 mA
V
= 10 V
2
CC
†
Typicals are for T = 25°C unless otherwise noted.
A
5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPS2811, TPS2812, TPS2813, TPS2814, TPS2815
DUAL HIGH-SPEED MOSFET DRIVERS
SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997
regulator (TPS2811/2812/2813 only)
†
PARAMETER
TEST CONDITIONS
14 ≤ REG_IN ≤ 40 V, 0 ≤ I ≤ 20 mA
MIN TYP
MAX
UNIT
V
Output voltage
10
9
11.5
9.6
13
O
Output voltage in dropout
I
O
= 10 mA,
REG_IN = 10 V
V
†
Typicals are for T = 25°C unless otherwise noted.
A
supply current
†
PARAMETER
TEST CONDITIONS
MIN TYP
MAX
5
UNIT
µA
Supply current into V
CC
Inputs high or low
REG_IN = 20 V,
0.2
40
Supply current into REG_IN
REG_OUT open
100
µA
†
Typicals are for T = 25°C unless otherwise noted.
A
TPS28xxY electrical characteristics at T = 25°C, V
L
= 10 V, REG_IN open for TPS2811/12/13,
A
CC
C = 1 nF (unless otherwise noted)
inputs
PARAMETER
TEST CONDITIONS
MIN
TYP
3.3
5.8
8.2
1.6
3.3
4.2
1.2
0.2
5
MAX
UNIT
V
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
= 5 V
Positive-going input threshold voltage
Negative-going input threshold voltage
= 10 V
= 14 V
= 5 V
V
V
V
= 10 V
= 14 V
= 5 V
V
V
Input hysteresis
Input current
V
Inputs = 0 V or V
µA
pF
CC
Input capacitance
outputs
PARAMETER
TEST CONDITIONS
MIN
TYP
9.9
9.1
0.18
1
MAX
UNIT
I
O
I
O
I
O
I
O
= –1 mA
= –100 mA
= 1 mA
High-level output voltage
V
Low-level output voltage
Peak output current
V
A
= 100 mA
V
CC
= 10.5 V
2
regulator (TPS2811, 2812, 2813)
PARAMETER
TEST CONDITIONS
14 ≤ REG_IN ≤ 40 V, 0 ≤ I ≤ 20 mA
MIN
MIN
TYP
11.5
9.6
MAX
MAX
UNIT
V
Output voltage
O
Output voltage in dropout
I
O
= 10 mA,
REG_IN = 10 V
V
power supply current
PARAMETER
TEST CONDITIONS
TYP
0.2
40
UNIT
µA
Supply current into V
CC
Inputs high or low
REG_IN = 20 V,
Supply current into REG_IN
REG_OUT open
µA
6
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPS2811, TPS2812, TPS2813, TPS2814, TPS2815
DUAL HIGH-SPEED MOSFET DRIVERS
SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997
switching characteristics for all devices over recommended operating ambient temperature range,
REG_IN open for TPS2811/12/13, C = 1 nF (unless otherwise specified)
L
PARAMETER
TEST CONDITIONS
MIN
TYP
14
15
20
15
15
18
25
25
34
24
26
36
MAX
25
30
35
25
30
35
40
45
50
40
45
50
UNIT
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
= 14 V
= 10 V
= 5 V
t
t
t
t
Rise time
Fall time
ns
r
= 14 V
= 10 V
= 5 V
ns
ns
ns
f
= 14 V
= 10 V
= 5 V
Prop delay time high-to-low-level output
Prop delay time low-to-high-level output
PHL
PLH
= 14 V
= 10 V
= 5 V
PARAMETER MEASUREMENT INFORMATION
TPS2811
V
CC
+
1
8
Regulator
0.1 µF
4.7 µF
2
3
7
6
5
Input
Output
50 Ω
1 nF
4
NOTE A: Input rise and fall times should be ≤10 ns for accurate measurement of ac parameters.
Figure 1. Test Circuit For Measurement of Switching Characteristics
7
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPS2811, TPS2812, TPS2813, TPS2814, TPS2815
DUAL HIGH-SPEED MOSFET DRIVERS
SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997
PARAMETER MEASUREMENT INFORMATION
TPS2811
1
8
Regulator
2
3
7
6
5
0–10 V dc
xOUT
Current
Loop
V
CC
10 V
+
0.1 µF
4.7 µF
4
Figure 2. Shoot-through Current Test Setup
50%
50%
1IN
0 V
0 V
t
f
t
r
90%
90%
10%
50%
50%
1OUT
10%
t
t
PHL
PLH
Figure 3. Typical Timing Diagram (TPS2811)
TYPICAL CHARACTERISTICS
Tables of Characteristics Graphs and Application Information
typical characteristics
PARAMETER
vs PARAMETER 2
Supply voltage
FIGURE
PAGE
10
10
10
11
Rise time
4
5
Fall time
Supply voltage
Propagation delay time
Supply voltage
6, 7
8
Supply voltage
Supply current
Load capacitance
Ambient temperature
Supply voltage
9
11
10
11
11
Input threshold voltage
Regulator output voltage
Regulator quiescent current
Peak source current
11
Regulator input voltage
Regulator input voltage
Supply voltage
12, 13
14
15
16
17
18
12
12
12
13
13
13
Peak sink current
Supply voltage
Input voltage, high-to-low
Input voltage, low-to-high
Shoot-through current
8
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPS2811, TPS2812, TPS2813, TPS2814, TPS2815
DUAL HIGH-SPEED MOSFET DRIVERS
SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997
TYPICAL CHARACTERISTICS
Tables of Characteristics Graphs and Application Information (Continued)
general applications
PARAMETER
vs PARAMETER 2
FIGURE
19, 20
PAGE
15
Switching test circuits and application information
Low-to-high
High-to-low
21, 23, 25
22, 24, 26
16, 17
16, 17
Voltage of 1OUT vs 2OUT
Time
circuit for measuring paralleled switching characteristics
PARAMETER
vs PARAMETER 2
FIGURE
27
PAGE
17
Switching test circuits and application information
Low-to-high
High-to-low
28, 30
29, 31
18
Input voltage vs output voltage
Time
18
Hex-1 to Hex-4 application information
PARAMETER
vs PARAMETER 2
FIGURE
32
PAGE
19
20
20
21
22
23
20
21
21
22
23
20
21
22
22
23
Driving test circuit and application information
Hex-1 size
33
Hex-2 size
36
Drain-source voltage vs drain current
Time
Time
Time
Hex-3 size
39
Hex-4 size
41
Hex-4 size parallel drive
Hex-1 size
45
34
Hex-2 size
37
Drain-source voltage vs gate-source voltage at turn-on
Drain-source voltage vs gate-source voltage at turn-off
Hex-3 size
40
Hex-4 size
43
Hex-4 size parallel drive
Hex-1 size
46
35
Hex-2 size
38
Hex-3 size
42
Hex-4 size
44
Hex-4 size parallel drive
47
synchronous buck regulator application
PARAMETER
vs PARAMETER 2
FIGURE
PAGE
24
3.3-V 3-A Synchronous-Rectified Buck Regulator Circuit
Q1 drain voltage vs gate voltage at turn-on
Q1 drain voltage vs gate voltage at turn-off
Q1 drain voltage vs Q2 gate-source voltage
48
49
50
26
26
Time
51, 52, 53
54
26, 27
27
3 A
5 A
Output ripple voltage vs inductor current
55
27
9
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPS2811, TPS2812, TPS2813, TPS2814, TPS2815
DUAL HIGH-SPEED MOSFET DRIVERS
SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997
TYPICAL CHARACTERISTICS
RISE TIME
vs
FALL TIME
vs
SUPPLY VOLTAGE
SUPPLY VOLTAGE
22
22
C
= 1 nF
C
= 1 nF
L
L
20
18
16
14
20
18
16
14
T
= 125°C
= 75°C
= 25°C
A
T
= 125°C
A
T
A
T
A
= 75°C
= 25°C
T
A
T
A
T
A
= –50°C
T = –50°C
A
T
A
= –25°C
T
A
= –25°C
12
10
12
10
5
6
7
8
9
10
11
12
13 14
5
6
7
8
9
10
11
12
13 14
V
CC
– Supply Voltage – V
V
CC
– Supply Voltage – V
Figure 4
Figure 5
PROPAGATION DELAY TIME,
HIGH-TO-LOW-LEVEL OUTPUT
vs
PROPAGATION DELAY TIME,
LOW-TO-HIGH-LEVEL OUTPUT
vs
SUPPLY VOLTAGE
SUPPLY VOLTAGE
45
45
40
35
C
= 1 nF
C
= 1 nF
L
L
40
35
30
25
T
A
= 25°C
T
A
= 75°C
30
25
T
A
= 125°C
T =125°C
A
T
A
= 25°C
T
A
= 75°C
T
= –25°C
A
20
15
20
15
T
= –50°C
A
T
A
= –50°C
T
= –25°C
A
5
6
7
8
9
10 11
12 13 14
5
6
7
8
9
10
11
12
13 14
V
CC
– Supply Voltage – V
V
CC
– Supply Voltage – V
Figure 6
Figure 7
10
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPS2811, TPS2812, TPS2813, TPS2814, TPS2815
DUAL HIGH-SPEED MOSFET DRIVERS
SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997
TYPICAL CHARACTERISTICS
SUPPLY CURRENT
vs
SUPPLY CURRENT
vs
SUPPLY VOLTAGE
LOAD CAPACITANCE
16
14
12
10
8
2.5
2
V
= 10 V
CC
f = 100 kHz
= 25°C
Duty Cycle = 50%
= 1 nF
C
L
T
A
1 MHz
1.5
1
0.5
0
6
500 kHz
100 kHz
4
75 kHz
40 kHz
10
2
0
0
0.5
1
1.5
2
4
6
8
12
14
C
– Load Capacitance – nF
L
V
CC
– Supply Voltage – V
Figure 8
Figure 9
INPUT THRESHOLD VOLTAGE
SUPPLY CURRENT
vs
vs
SUPPLY VOLTAGE
AMBIENT TEMPERATURE
1.2
1.19
1.18
9
C
V
= 1 nF
T
A
= 25°C
L
= 10 V
8
7
6
5
4
3
2
CC
Duty Cycle = 50%
f = 100 kHz
+ Threshold
1.17
1.16
1.15
1.14
– Threshold
1.13
1.12
1.11
1.1
1
0
–50 –25
0
25
50
75
100
125
4
6
8
10
12
14
V
CC
– Supply Voltage – V
T
A
– Temperature – °C
Figure 10
Figure 11
11
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPS2811, TPS2812, TPS2813, TPS2814, TPS2815
DUAL HIGH-SPEED MOSFET DRIVERS
SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997
TYPICAL CHARACTERISTICS
REGULATOR OUTPUT VOLTAGE
vs
REGULATOR OUTPUT VOLTAGE
vs
REGULATOR INPUT VOLTAGE
REGULATOR INPUT VOLTAGE
14
13
12
13
12
11
10
9
R
= 10 kΩ
R
= 10 kΩ
L
T
= –55°C
L
A
T
A
= 25°C
T
A
= –55°C
T
A
= 125°C
11
10
9
T
= 125°C
A
T
A
= 25°C
8
7
6
8
7
6
5
4
5
4
4
8
12
16 20
24
28 32
36 40
4
6
8
10
12
14
Regulator Input Voltage – V
Regulator Input Voltage – V
Figure 12
Figure 13
REGULATOR QUIESCENT CURRENT
vs
PEAK SOURCE CURRENT
vs
REGULATOR INPUT VOLTAGE
SUPPLY VOLTAGE
50
45
2.5
2
R
= 0.5 Ω
L
T
= –55°C
A
f = 100 kHz
Duty Cycle = 5%
T
A
40
35
30
25
20
= 25°C
T
= 25°C
A
1.5
1
T
A
= 125°C
15
10
.5
0
R
= 10 kΩ
L
5
0
4
8
12 16
20
24
28
32
36
40
4
6
8
10
12
14
V
CC
– Supply Voltage – V
Regulator Input Voltage – V
Figure 14
Figure 15
12
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPS2811, TPS2812, TPS2813, TPS2814, TPS2815
DUAL HIGH-SPEED MOSFET DRIVERS
SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997
TYPICAL CHARACTERISTICS
PEAK SINK CURRENT
vs
SUPPLY VOLTAGE
2.5
2
R
= 0.5 Ω
L
f = 100 kHz
Duty Cycle = 5%
T
A
= 25°C
1.5
1
.5
0
4
6
8
10
12
14
V
CC
– Supply Voltage – V
Figure 16
SHOOT-THROUGH CURRENT
vs
SHOOT-THROUGH CURRENT
vs
INPUT VOLTAGE, LOW-TO-HIGH
INPUT VOLTAGE, HIGH-TO-LOW
6
5
4
3
6
5
V
C
T
= 10 V
= 0
= 25°C
V
C
T
= 10 V
= 0
= 25°C
CC
L
A
CC
L
A
4
3
2
2
1
0
1
0
10
8
6
4
2
0
0
2
4
6
8
10
V – Input Voltage, High-to-Low – V
I
V – Input Voltage, Low-to-High – V
I
Figure 17
Figure 18
13
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TPS2811, TPS2812, TPS2813, TPS2814, TPS2815
DUAL HIGH-SPEED MOSFET DRIVERS
SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997
APPLICATION INFORMATION
The TPS2811, TPS2812 and TPS2813 circuits each contain one regulator and two MOSFET drivers. The
regulator can be used to limit V to between 10 V and 13 V for a range of input voltages from 14 V to 40 V,
CC
while providing up to 20 mA of dc drive. The TPS2814 and TPS2815 both contain two drivers, each of which
has two inputs. The TPS2811 has inverting drivers, the TPS2812 has noninverting drivers, and the TPS2813
has one inverting and one noninverting driver. The TPS2814 is a dual 2-input AND driver with one inverting input
oneachdriver, andtheTPS2815isadual2-inputNANDdriver. TheseMOSFETdriversarecapableofsupplying
up to 2.1 A or sinking up to 1.9 A (see Figures 15 and 16) of instantaneous current to n-channel or p-channel
MOSFETs. The TPS2811 family of MOSFET drivers have very fast switching times combined with very short
propagation delays. These features enhance the operation of today’s high-frequency circuits.
The CMOS input circuit has a positive threshold of approximately 2/3 of V , with a negative threshold of 1/3 of
CC
9
V
, and a very high input impedance in the range of 10 Ω. Noise immunity is also very high because of the
CC
Schmidt trigger switching. In addition, the design is such that the normal shoot-through current in CMOS (when
the input is biased halfway between V and ground) is limited to less than 6 mA. The limited shoot-through
CC
is evident in the graphs in Figures 17 and 18. The input stage shown in the functional block diagram better
illustrates the way the front end works. The circuitry of the device is such that regardless of the rise and/or fall
time of the input signal, the output signal will always have a fast transition speed; this basically isolates the
waveforms at the input from the output. Therefore, the specified switching times are not affected by the slopes
of the input waveforms.
The basic driver portion of the circuits operate over a supply voltage range of 4 V to 14 V with a maximum bias
current of 5 µA. Each driver consists of a CMOS input and a buffered output with a 2-A instantaneous drive
capability. They have propagation delays of less than 30 ns and rise and fall times of less than 20 ns each.
Placing a 0.1-µF ceramic capacitor between V
and ground is recommended; this will supply the
CC
instantaneous current needed by the fast switching and high current surges of the driver when it is driving a
MOSFET.
The output circuit is also shown in the functional block diagram. This driver uses a unique combination of a
bipolar transistor in parallel with a MOSFET for the ability to swing from V
to ground while providing 2 A of
CC
instantaneous driver current. This unique parallel combination of bipolar and MOSFET output transistors
provides the drive required at V and ground to guarantee turn-off of even low-threshold MOSFETs. Typical
CC
bipolar-only output devices don’t easily approach V
or ground.
CC
The regulator, included in the TPS2811, TPS2812 and TPS2813, has an input voltage range of 14 V to 40 V.
It produces an output voltage of 10 V to 13 V and is capable of supplying from 0 to 20 mA of output current. In
grounded source applications, this extends the overall circuit operation to 40 V by clamping the driver supply
voltage (V ) to a safe level for both the driver and the MOSFET gate. The bias current for full operation is a
CC
maximum of 150 µA. A 0.1-µF capacitor connected between the regulator output and ground is required to
ensure stability. For transient response, an additional 4.7-µF electrolytic capacitor on the output and a 0.1-µF
ceramic capacitor on the input will optimize the performance of this circuit. When the regulator is not in use, it
can be left open at both the input and the output, or the input can be shorted to the output and tied to either the
V
or the ground pin of the chip.
CC
14
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TPS2811, TPS2812, TPS2813, TPS2814, TPS2815
DUAL HIGH-SPEED MOSFET DRIVERS
SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997
APPLICATION INFORMATION
matching and paralleling connections
Figures 21 and 22 show the delays for the rise and fall time of each channel. As can be seen on a 5-ns scale,
there is very little difference between the two channels at no load. Figures 23 and 24 show the difference
between the two channels for a 1-nF load on each output. There is a slight delay on the rising edge, but little
or no delay on the falling edge. As an example of extreme overload, Figures 25 and 26 show the difference
between the two channels, or two drivers in the package, each driving a 10-nF load. As would be expected, the
rise and fall times are significantly slowed down. Figures 28 and 29 show the effect of paralleling the two
channels and driving a 1-nF load. A noticeable improvement is evident in the rise and fall times of the output
waveforms. Finally, Figures 30 and 31 show the two drivers being paralleled to drive the 10-nF load and as could
be expected the waveforms are improved. In summary, the paralleling of the two drivers in a package enhances
the capability of the drivers to handle a larger load. Because of manufacturing tolerances, it is not recommended
to parallel drivers that are not in the same package.
V
CC
TPS2811
+
0.1 µF
4.7 µF
8
1
Regulator
2
3
7
6
Output
50 Ω
1 nF
4
5
Figure 19. Test Circuit for Measuring Switching Characteristics
V
CC
TPS2811
+
0.1 µF
4.7 µF
8
1
Regulator
2
3
7
6
Output 1
50 Ω
C
L(1)
4
5
Output 2
C
L(2)
NOTE A: Input rise and fall times should be ≤10 ns for accurate measurement of ac parameters.
Figure 20. Test Circuit for Measuring Switching Characteristics with the Inputs Connected in Parallel
15
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TPS2811, TPS2812, TPS2813, TPS2814, TPS2815
DUAL HIGH-SPEED MOSFET DRIVERS
SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997
APPLICATION INFORMATION
T
= 25°C
A
I
L
V = 14 V
C
Paralleled Input
V
O
at 1OUT (5 V/div, 5 ns/div)
= 0
V
O
at 2OUT (5 V/div, 5 ns/div)
V
at 1OUT (5 V/div, 5 ns/div)
at 2OUT (5 V/div, 5 ns/div)
O
V
O
T
= 25°C
A
I
L
V = 14 V
C
Paralleled Inputs
= 0
t – Time
t – Time
Figure 21. Voltage of 1OUT vs Voltage at
2OUT, Low-to-High Output Delay
Figure 22. Voltage at 1OUT vs Voltage
at 2OUT, High-to-Low Output Delay
T
= 25°C
A
I
L
V
O
at 1OUT (5 V/div, 10 ns/div)
V = 14 V
C
Paralleled Input
= 1 nF on Each Output
V
at 2OUT
O
(5 V/div, 10 ns/div)
V
at 1OUT
O
(5 V/div, 10 ns/div)
V
O
at 2OUT (5 V/div, 10 ns/div)
T
= 25°C
A
I
L
V = 14 V
C
Paralleled Input
= 1 nF Each Output
t – Time
t – Time
Figure 23. Voltage at 1OUT vs Voltage at
2OUT, Low-to-High Output Delay
Figure 24. Voltage at 1OUT vs Voltage at
2OUT, High-to-Low Output Delay
16
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TPS2811, TPS2812, TPS2813, TPS2814, TPS2815
DUAL HIGH-SPEED MOSFET DRIVERS
SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997
APPLICATION INFORMATION
V
at 1OUT
O
(5 V/div, 20 ns/div)
V
at 2OUT
O
(5 V/div, 20 ns/div)
V
O
at (5 V/div, 20 ns/div)
V
O
at 2OUT (5 V/div, 20 ns/div)
T
V
C
= 25°C
T
V
C
= 25°C
A
A
= 14 V
= 14 V
CC
CC
= 10 nF on Each Output
= 10 nF on Each Output
L
L
Paralleled Input
Paralleled Input
t – Time
t – Time
Figure 26. Voltage at 1OUT vs Voltage at
2OUT, High-to-Low Output Delay
Figure 25. Voltage at 1OUT vs Voltage at
2OUT, Low-to-High Output Delay
V
CC
TPS2811
Regulator
+
0.1 µF
4.7 µF
8
1
2
3
7
6
Output
50 Ω
C
L
4
5
NOTE A: Input rise and fall times should be ≤10 ns for accurate measurement of ac parameters.
Figure 27. Test Circuit for Measuring Paralleled Switching Characteristics
17
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPS2811, TPS2812, TPS2813, TPS2814, TPS2815
DUAL HIGH-SPEED MOSFET DRIVERS
SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997
APPLICATION INFORMATION
T
V
C
= 25°C
= 14 V
CC
= 1 nF
A
V (5 V/div, 20 ns/div)
I
L
V (5 V/div, 20 ns/div)
I
Paralleled Input
and Output
T
V
C
= 25°C
= 14 V
CC
= 1 nF
A
L
Paralleled Input
and Output
V
O
(5 V/div, 20 ns/div)
V
O
(5 V/div, 20 ns/div)
t – Time
t – Time
Figure 28. Input Voltage vs Output Voltage,
Low-to-High Propagation Delay of Paralleled
Drivers
Figure 29. Input Voltage vs Output Voltage,
High-to-Low Propagation Delay of Paralleled
Drivers
T
V
C
= 25°C
A
= 14 V
CC
= 10 nF
L
V (5 V/div, 20 ns/div)
I
Paralleled Input
and Output
V (5 V/div, 20 ns/div)
I
T
V
C
= 25°C
A
= 14 V
CC
V
O
(5 V/div, 20 ns/div)
= 10 nF
L
Paralleled Input
and Output
V
O
(5 V/div, 20 ns/div)
t – Time
t – Time
Figure 31. Input Voltage vs Output Voltage,
High-to-Low Propagation Delay of Paralleled
Drivers
Figure 30. Input Voltage vs Output Voltage,
Low-to-High Propagation Delay of Paralleled
Drivers
18
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPS2811, TPS2812, TPS2813, TPS2814, TPS2815
DUAL HIGH-SPEED MOSFET DRIVERS
SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997
APPLICATION INFORMATION
Figures 33 through 47 illustrate the performance of the TPS2811 driving MOSFETs with clamped inductive
loads, similar to what is encountered in discontinuous-mode flyback converters. The MOSFETs that were tested
range in size from Hex-1 to Hex-4, although the TPS28xx family is only recommended for Hex-3 or below.
The test circuit is shown in Figure 32. The layout rules observed in building the test circuit also apply to real
applications. Decoupling capacitor C1 is a 0.1-µF ceramic device, connected between V
and GND of the
CC
TPS2811, with short lead lengths. The connection between the driver output and the MOSFET gate, and
between GND and the MOSFET source, are as short as possible to minimize inductance. Ideally, GND of the
driver is connected directly to the MOSFET source. The tests were conducted with the pulse generator
frequency set very low to eliminate the need for heat sinking, and the duty cycle was set to turn off the MOSFET
when the drain current reached 50% of its rated value. The input voltage was adjusted to clamp the drain voltage
at 80% of its rating.
As shown, the driver is capable of driving each of the Hex-1 through Hex-3 MOSFETs to switch in 20 ns or less.
Even the Hex-4 is turned on in less than 20 ns. Figures 45, 46 and 47 show that paralleling the two drivers in
a package enhances the gate waveforms and improves the switching speed of the MOSFET. Generally, one
driver is capable of driving up to a Hex-4 size. The TPS2811 family is even capable of driving large MOSFETs
that have a low gate charge.
V
I
CR1
L1
Current
Loop
8
1
Regulator
+
V
–
V
DS
Q1
DS
2
3
7
6
V
GS
R1
50 Ω
4
5
V
CC
+
C2
4.7 µF
C1
0.1 µF
Figure 32. TPS2811 Driving Hex-1 through Hex-4 Devices
19
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPS2811, TPS2812, TPS2813, TPS2814, TPS2815
DUAL HIGH-SPEED MOSFET DRIVERS
SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997
APPLICATION INFORMATION
T
V
= 25°C
T
V
= 25°C
A
A
V
DS
(20 V/div, 0.5 µs/div)
= 14 V
= 14 V
CC
CC
V = 48 V
V = 48 V
I
I
V
DS
(20 V/div, 50 ns/div)
V
GS
(5 V/div, 50 ns/div)
I
D
(0.5 A/div, 0.5 µs/div)
t – Time
t – Time
Figure 33. Drain-Source Voltage vs Drain
Current, TPS2811 Driving an IRFD014
(Hex-1 Size)
Figure 34. Drain-Source Voltage vs
Gate-Source Voltage, at Turn-on,
TPS2811 Driving an IRFD014 (Hex-1 Size)
T
= 25°C
= 14 V
A
V
CC
V = 48 V
V
DS
(20 V/div, 50 ns/div)
I
V
DS
(50 V/div, 0.2 µs/div)
T
= 25°C
= 14 V
A
V
CC
V = 80 V
I
V
GS
(5 V/div, 50 ns/div)
V
GS
(0.5 A/div, 0.2 µs/div)
t – Time
t – Time
Figure 35. Drain-Source Voltage vs
Gate-Source Voltage, at Turn-off,
TPS2811 Driving an IRFD014 (Hex-1 Size)
Figure 36. Drain-Source Voltage vs Drain
Current, TPS2811 Driving an IRFD120
(Hex-2 Size)
20
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPS2811, TPS2812, TPS2813, TPS2814, TPS2815
DUAL HIGH-SPEED MOSFET DRIVERS
SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997
APPLICATION INFORMATION
T
V
= 25°C
T
V
= 25°C
A
A
= 14 V
V
DS
(50 V/div, 50 ns/div)
= 14 V
CC
CC
V = 80 V
V = 80 V
I
I
V
(50 V/div, 50 ns/div)
(5 V/div, 50 ns/div)
DS
V
GS
V
GS
(5 V/div, 50 ns/div)
t – Time
t – Time
Figure 37. Drain-Source Voltage vs
Gate-Source Voltage,
Figure 38. Drain-Source Voltage vs
Gate-Source Voltage,
at Turn-on, TPS2811 Driving an IRFD120
(Hex-2 Size)
at Turn-off, TPS2811 Driving an IRFD120
(Hex-2 Size)
T
V
= 25°C
A
= 14 V
CC
V = 80 V
I
V
DS
(50 V/div, 50 ns/div)
V
DS
(50 V/div, 2 µs/div)
T
= 25°C
= 14 V
A
V
CC
V = 80 V
V
GS
(5 A/div, 50 ns/div)
I
I
D
(5 A/div, 2 µs/div)
t – Time
t – Time
Figure 39. Drain-Source Voltage vs Drain
Current, TPS2811 Driving an IRF530
(Hex-3 Size)
Figure 40. Drain-Source Voltage vs
Gate-Source Voltage, at Turn-on, TPS2811
Driving an IRF530 (Hex-3 Size)
21
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPS2811, TPS2812, TPS2813, TPS2814, TPS2815
DUAL HIGH-SPEED MOSFET DRIVERS
SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997
APPLICATION INFORMATION
V
DS
(50 V/div, 0.2 µs/div)
V
DS
(50 V/div, 50 ns/div)
T
= 25°C
= 14 V
A
V
CC
V = 350 V
I
T
V
= 25°C
A
= 14 V
CC
V = 80 V
I
I
(2 A/div,
D
0.2 µs/div)
V
GS
(5 V/div, 50 ns/div)
t – Time
t – Time
Figure 41. Drain-Source Voltage vs Drain
Current,
Figure 42. Drain-Source Voltage vs
Gate-Source Voltage,
One Driver, TPS2811 Driving an IRF840
(Hex-4 Size)
at Turn-off, TPS2811 Driving an IRF530
(Hex-3 Size)
V
DS
(50 V/div, 50 ns/div)
V
DS
(50 V/div, 50 ns/div)
V
GS
(5 V/div, 50 ns/div)
V
GS
(5 V/div, 50 ns/div)
T
= 25°C
= 14 V
A
T
= 25°C
= 14 V
A
V
CC
V = 350 V
V
CC
V = 350 V
I
I
t – Time
t – Time
Figure 44. Drain-Source Voltage vs Gate-Source
Voltage, at Turn-off, One Driver,
TPS2811 Driving an IRF840
(Hex-4 Size)
Figure 43. Drain-Source Voltage vs
Gate-Source Voltage, at Turn-on,
One Driver, TPS2811 Driving an IRF840
(Hex-4 Size)
22
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPS2811, TPS2812, TPS2813, TPS2814, TPS2815
DUAL HIGH-SPEED MOSFET DRIVERS
SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997
APPLICATION INFORMATION
V
DS
(50 V/div, 0.2 µs/div)
V (50 V/div,
DS
50 ns/div)
T
= 25°C
= 14 V
A
V
CC
V = 350 V
I
V (5 V/div,
GS
50 ns/div)
I
(2 A/div,
D
0.2 µs/div)
T
= 25°C
= 14 V
A
V
CC
V = 350 V
I
t – Time
t – Time
Figure 46. Drain-Source Voltage vs Gate-Source
Voltage, at Turn-on, Parallel Drivers,
Figure 45. Drain-Source Voltage vs Drain
Current, Parallel Drivers,
TPS2811 Driving an IRF840 (Hex-4 Size)
TPS2811 Driving an IRF840 (Hex-4 Size)
V
DS
(50 V/div, 50 ns/div)
V
GS
(5 V/div, 50 ns/div)
T
= 25°C
= 14 V
A
V
CC
V = 350 V
I
t – Time
Figure 47. Drain-Source Voltage vs Gate-Source Voltage, at Turn-off,
Parallel Drivers, TPS2811 Driving an IRF840 (Hex-4 Size)
23
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPS2811, TPS2812, TPS2813, TPS2814, TPS2815
DUAL HIGH-SPEED MOSFET DRIVERS
SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997
APPLICATION INFORMATION
synchronous buck regulator
Figure 48 is the schematic for a 100-kHz synchronous-rectified buck converter implemented with a TL5001
pulse-width-modulation (PWM) controller and a TPS2812 driver. The bill of materials is provided in Table 1. The
converter operates over an input range from 5.5 V to 12 V and has a 3.3-V output capable of supplying 3 A
continuously and 5 A during load surges. The converter achieves an efficiency of 90.6% at 3 A and 87.6% at
5 A. Figures 49 and 50 show the power switch switching performance. The output ripple voltage waveforms are
documented in Figures 54 and 55.
The TPS2812 drives both the power switch, Q2, and the synchronous rectifier, Q1. Large shoot-through
currents, caused by power switch and synchronous rectifier remaining on simultaneously during the transitions,
are prevented by small delays built into the drive signals, using CR2, CR3, R11, R12, and the input capacitance
of the TPS2812. These delays allow the power switch to turn off before the synchronous rectifier turns on and
vice versa. Figure 51 shows the delay between the drain of Q2 and the gate of Q1; expanded views are provided
in Figures 52 and 53.
Q1
IRF7406
L1
27 µF
3
1
J1
J2
+
+
+
+
C100
100 µF
16 V
C12
C7
C13
C5
100 µF
16 V
V
V
1
3.3 V
3.3 V
GND
GND
1
I
C11
0.47 µF
R5
100 µF
16 V
100 µF
16 V
10 µF
10 V
10 kΩ
2
3
4
2
3
4
I
2
CR1
1
GND
30BQ015
GND
R7
2
3.3 Ω
1
8
7
6
5
REG_IN
REG_OUT
1 OUT
2
3
4
1 IN
U2
3
Q2
R4
R3
C6
TPS2812D
GND
V
CC
IRF7201
2.32 kΩ
180 Ω
1000 pF
2 IN
2 OUT
1%
R13
10 kΩ
C4
R2
C3
C14
0.1 µF
0.022 µF
1.6 kΩ
0.0022
R6
15 Ω
µF
C2
0.033 µF
1
2
3
4
R10
1 kΩ
CR2
CR3
OUT
V
COMP
FB
CC
BAS16ZX
R1
U1
C15
1 µF
1.00 kΩ
1%
TL5001CD
R11
GND
RT
DTC
6
SCP
30 kΩ
8
7
5
BAS16ZX
+
R9
R8
C1
1 µF
90.9 kΩ
121 kΩ
1%
1%
R12
C9
10 kΩ
0.22 µF
Figure 48. 3.3-V 3-A Synchronous-Rectified Buck Regulator Circuit
24
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPS2811, TPS2812, TPS2813, TPS2814, TPS2815
DUAL HIGH-SPEED MOSFET DRIVERS
SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997
APPLICATION INFORMATION
Table 1. Bill of Materials,
3.3-V, 3-A Synchronous-Rectified Buck Converter
REFERENCE
DESCRIPTION
TL5001CD, PWM
VENDOR
U1
Texas Instruments,
Texas Instruments,
International Rectifier,
Zetex,
972-644-5580
972-644-5580
310-322-3331
516-543-7100
U2
TPS2812D, N.I. MOSFET Driver
3 A, 15 V, Schottky, 30BQ015
Signal Diode, BAS16ZX
1 µF, 16 V, Tantalum
0.033 µF, 50 V
CR1
CR2,CR3
C1
C2
C3
0.0022 µF, 50 V
C4
0.022 µF, 50 V
C5,C7,C10,C12
100 µF, 16 V, Tantalum, TPSE107M016R0100 AVX,
800-448-9411
708-803-6100
C6
C9
1000 pF, 50 V
0.22 µF, 50 V
C11
C13
C14
C15
J1,J2
L1
0.47 µF, 50 V, Z5U
10 µF, 10 V, Ceramic, CC1210CY5V106Z
TDK,
0.1 µF, 50 V
1.0 µF, 50 V
4-Pin Header
27 µH, 3 A/5 A, SML5040
IRF7406, P-FET
IRF7201, N-FET
1.00 kΩ, 1%
1.6 kΩ
Nova Magnetics, Inc.,
International Rectifier,
International Rectifier,
972-272-8287
310-322-3331
310-322-3331
Q1
Q2
R1
R2
R3
180 Ω
R4
2.32 kΩ, 1 %
10 kΩ
R5,R12,R13
R6
15 Ω
R7
3.3 Ω
R8
121 kΩ, 1%
90.9 kΩ, 1%
1 kΩ
R9
R10
R11
30 kΩ
NOTES: 2. Unless otherwise specified, capacitors are X7R ceramics.
3. Unless otherwise specified, resistors are 5%, 1/10 W.
25
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPS2811, TPS2812, TPS2813, TPS2814, TPS2815
DUAL HIGH-SPEED MOSFET DRIVERS
SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997
APPLICATION INFORMATION
V
D
(5 V/div, 20 ns/div)
V
V
(2 V/div, 20 ns/div)
(5 V/div, 20 ns/div)
G
D
V
G
(2 V/div, 20 ns/div)
T
= 25°C
A
I
O
T
= 25°C
A
I
O
V = 12 V
V
V = 12 V
V
= 3.3 V at 5A
= 3.3 V at 5A
t – Time
t – Time
Figure 49. Q1 Drain Voltage vs Gate Voltage,
at Switch Turn-on
Figure 50. Q1 Drain Voltage vs Gate Voltage,
at Switch Turn-off
T
= 25°C
A
I
O
V = 12 V
V
V
D
(5 V/div, 0.5 µs/div)
= 3.3 V at 5A
T
= 25°C
A
I
O
V = 12 V
V
= 3.3 V at 5A
V
D
(5 V/div, 20 ns/div)
V
GS
(2 V/div, 0.5 µs/div)
V
GS
(2 V/div, 20 ns/div)
t – Time
t – Time
Figure 52. Q1 Drain Voltage vs Q2
Gate-Source Voltage
Figure 51. Q1 Drain Voltage vs Q2
Gate-Source Voltage
26
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPS2811, TPS2812, TPS2813, TPS2814, TPS2815
DUAL HIGH-SPEED MOSFET DRIVERS
SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997
APPLICATION INFORMATION
T
= 25°C
V
D
(5 V/div, 20 ns/div)
A
I
O
V = 12 V
V
= 3.3 V at 5A
V
GS
(2 V/div, 20 ns/div)
t – Time
Figure 53. Q1 Drain Voltage vs Q2 Gate-Source Voltage
T
= 25°C
A
I
O
Inductor Current (2 A/div, 2 µs/div)
V = 12 V
V
= 3.3 V at 3A
Inductor Current (1 A/div, 2 µs/div)
T
= 25°C
A
I
O
V = 12 V
V
= 3.3 V at 5 A
1
2
1
2
Output Ripple Voltage (20 mV/div, 2 µs/div)
Output Ripple Voltage (20 mV/div, 2 µs/div)
t – Time
t – Time
Figure 54. Output Ripple Voltage vs
Inductor Current, at 3 A
Figure 55. Output Ripple Voltage vs
Inductor Current, at 5 A
27
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPS2811, TPS2812, TPS2813, TPS2814, TPS2815
DUAL HIGH-SPEED MOSFET DRIVERS
SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997
MECHANICAL DATA
D (R-PDSO-G**)
PLASTIC SMALL-OUTLINE PACKAGE
14 PIN SHOWN
PINS **
0.050 (1,27)
8
14
16
DIM
0.020 (0,51)
0.014 (0,35)
0.010 (0,25)
0.197
(5,00)
0.344
(8,75)
0.394
(10,00)
M
A MAX
14
8
0.189
(4,80)
0.337
(8,55)
0.386
(9,80)
A MIN
0.244 (6,20)
0.228 (5,80)
0.008 (0,20) NOM
0.157 (4,00)
0.150 (3,81)
Gage Plane
1
7
A
0.010 (0,25)
0°–8°
0.044 (1,12)
0.016 (0,40)
Seating Plane
0.004 (0,10)
0.010 (0,25)
0.004 (0,10)
0.069 (1,75) MAX
4040047/B 03/95
NOTES: A. All linear dimensions are in inches (millimeters).
B. This drawing is subject to change without notice.
C. Body dimensions do not include mold flash or protrusion, not to exceed 0.006 (0,15).
D. Four center pins are connected to die mount pad.
E. Falls within JEDEC MS-012
28
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPS2811, TPS2812, TPS2813, TPS2814, TPS2815
DUAL HIGH-SPEED MOSFET DRIVERS
SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997
MECHANICAL DATA
P (R-PDIP-T8)
PLASTIC DUAL-IN-LINE PACKAGE
0.400 (10,60)
0.355 (9,02)
8
5
0.260 (6,60)
0.240 (6,10)
1
4
0.070 (1,78) MAX
0.310 (7,87)
0.290 (7,37)
0.020 (0,51) MIN
0.200 (5,08) MAX
Seating Plane
0.125 (3,18) MIN
0.100 (2,54)
0°–15°
0.021 (0,53)
0.015 (0,38)
0.010 (0,25)
M
0.010 (0,25) NOM
4040082/B 03/95
NOTES: A. All linear dimensions are in inches (millimeters).
B. This drawing is subject to change without notice.
C. Falls within JEDEC MS-001
29
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPS2811, TPS2812, TPS2813, TPS2814, TPS2815
DUAL HIGH-SPEED MOSFET DRIVERS
SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997
MECHANICAL DATA
PW (R-PDSO-G**)
PLASTIC SMALL-OUTLINE PACKAGE
14 PIN SHOWN
0,30
0,19
0,65
M
0,10
14
8
0,15 NOM
4,50
4,30
6,60
6,20
Gage Plane
0,25
1
7
0°–8°
0,75
A
0,50
Seating Plane
0,10
1,20 MAX
0,05 MIN
PINS **
8
14
16
20
24
28
DIM
3,10
2,90
5,10
4,90
5,10
4,90
6,60
6,40
7,90
7,70
9,80
9,60
A MAX
A MIN
4040064/E 08/96
NOTES: A. All linear dimensions are in millimeters.
B. This drawing is subject to change without notice.
C. Body dimensions do not include mold flash or protrusion not to exceed 0,15.
D. Falls within JEDEC MO-153
30
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
IMPORTANT NOTICE
Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue
any product or service without notice, and advise customers to obtain the latest version of relevant information
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subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those
pertaining to warranty, patent infringement, and limitation of liability.
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.
CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL
APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR
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CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO
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In order to minimize risks associated with the customer’s applications, adequate design and operating
safeguards must be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other
intellectual property right of TI covering or relating to any combination, machine, or process in which such
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party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.
Copyright 1998, Texas Instruments Incorporated
TPS2814Y 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| TPS2815 | TI | DUAL HIGH-SPEED MOSFET DRIVERS | 获取价格 |
|
| TPS2815D | TI | DUAL HIGH-SPEED MOSFET DRIVERS | 获取价格 |
|
| TPS2815DG4 | TI | DUAL HIGH-SPEED MOSFET DRIBERS | 获取价格 |
|
| TPS2815DR | TI | DUAL HIGH-SPEED MOSFET DRIBERS | 获取价格 |
|
| TPS2815DRG4 | TI | DUAL HIGH-SPEED MOSFET DRIBERS | 获取价格 |
|
| TPS2815P | TI | DUAL HIGH-SPEED MOSFET DRIVERS | 获取价格 |
|
| TPS2815PE4 | TI | DUAL HIGH-SPEED MOSFET DRIBERS | 获取价格 |
|
| TPS2815PW | TI | DUAL HIGH-SPEED MOSFET DRIVERS | 获取价格 |
|
| TPS2815PWLE | TI | DUAL HIGH-SPEED MOSFET DRIBERS | 获取价格 |
|
| TPS2815PWR | TI | DUAL HIGH-SPEED MOSFET DRIBERS | 获取价格 |
|
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