TPS28225D
更新时间：2024-12-03 13:11:08
品牌：TI
描述：4-A, 27-V half bridge gate driver with 4-V UVLO for synchronous rectification 8-SOIC -40 to 125
概述
规格参数
数据手册
替代型号TPS28225D 概述
4-A, 27-V half bridge gate driver with 4-V UVLO for synchronous rectification 8-SOIC -40 to 125 FET驱动器 MOSFET 驱动器
TPS28225D 规格参数
| 是否无铅： | 不含铅 | 是否Rohs认证： | 符合 |
| 生命周期： | Active | 零件包装代码： | SOIC |
| 包装说明： | SOIC-8 | 针数： | 8 |
| Reach Compliance Code： | compliant | ECCN代码： | EAR99 |
| HTS代码： | 8542.39.00.01 | Factory Lead Time： | 1 week |
| 风险等级： | 1.14 | Samacsys Confidence： | 4 |
| Samacsys Status： | Released | Samacsys PartID： | 417710 |
| Samacsys Pin Count： | 8 | Samacsys Part Category： | Integrated Circuit |
| Samacsys Package Category： | Small Outline Packages | Samacsys Footprint Name： | D (R-PDSO-G8) |
| Samacsys Released Date： | 2017-04-21 07:21:31 | Is Samacsys： | N |
| 高边驱动器： | YES | 接口集成电路类型： | BUFFER OR INVERTER BASED MOSFET DRIVER |
| JESD-30 代码： | R-PDSO-G8 | JESD-609代码： | e4 |
| 长度： | 4.89 mm | 湿度敏感等级： | 1 |
| 功能数量： | 1 | 端子数量： | 8 |
| 最高工作温度： | 125 °C | 最低工作温度： | -40 °C |
| 最大输出电流： | 6 A | 标称输出峰值电流： | 6 A |
| 封装主体材料： | PLASTIC/EPOXY | 封装代码： | SOP |
| 封装等效代码： | SOP8,.25 | 封装形状： | RECTANGULAR |
| 封装形式： | SMALL OUTLINE | 峰值回流温度（摄氏度）： | 260 |
| 电源： | 7.2 V | 认证状态： | Not Qualified |
| 座面最大高度： | 1.75 mm | 子类别： | MOSFET Drivers |
| 最大供电电压： | 8 V | 最小供电电压： | 4.5 V |
| 标称供电电压： | 7.2 V | 表面贴装： | YES |
| 温度等级： | AUTOMOTIVE | 端子面层： | Nickel/Palladium/Gold (Ni/Pd/Au) |
| 端子形式： | GULL WING | 端子节距： | 1.27 mm |
| 端子位置： | DUAL | 处于峰值回流温度下的最长时间： | NOT SPECIFIED |
| 宽度： | 3.9 mm | Base Number Matches： | 1 |
TPS28225D 数据手册
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PDF下载TPS28225
www.ti.com
SLUS710–MAY 2006
High-Frequency 4-A Sink Synchronous MOSFET Driver
FEATURES
DESCRIPTION
•
•
•
•
•
•
Drives Two N-Channel MOSFETs with 14-ns
Adaptive Dead Time
The TPS28225 is a high-speed driver for N-channel
complimentary driven power MOSFETs with adaptive
dead-time control. This driver is optimized for use in
variety of high-current one and multi-phase dc-to-dc
converters. The TPS28225 is a solution that provides
highly efficient, small size low EMI emmissions.
Wide Gate Drive Voltage: 4.5V Up to 8.8V
With Best Efficiency at 7V to 8V
Wide Power System Train Input Voltage: 3V
Up to 27V
The performance is achieved by up to 8.8-V gate
drive voltage, 14-ns adaptive dead-time control,
14-ns propagation delays and high-current 2-A
source and 4-A sink drive capability. The 0.4-Ω
impedance for the lower gate driver holds the gate of
power MOSFET below its threshold and ensures no
shoot-through current at high dV/dt phase node
transitions. The bootstrap capacitor charged by an
internal diode allows use of N-channel MOSFETs in
half-bridge configuration.
Wide Input PWM Signals: 2.0V up to 13.2-V
Amplitude
Capable Drive MOSFETs with ≥40-A Current
per Phase
High Frequency Operation: 14ns Propagation
Delay and 10ns Rise/Fall Time Allow Fsw -
2MHz
•
•
Capable Propagate <30-ns Input PWM Pulses
Low-Side Driver Sink On-Resistance (0.4Ω)
Prevents dV/dT Related Shoot-Through
Current
The TPS28225 features
a 3-state PWM input
compatible with all multi-phase controllers employing
3-state output feature. As long as the input stays
within 3-state window for the 250-ns hold-off time,
the driver switches both outputs low. This shutdown
•
•
3-State PWM Input for Power Stage Shutdown
Space Saving Enable (input) and Power Good
(output) Signals on Same Pin
mode prevents
output-voltage.
a
load from the reversed-
•
•
•
•
Thermal Shutdown
UVLO Protection
The other features include under voltage lockout,
thermal shutdown and two-way enable/power good
signal. Systems without 3-state featured controllers
can use enable/power good input/output to hold both
outputs low during shutting down.
Internal Bootstrap Diode
Economical SOIC-8 and Thermally Enhanced
3-mm x 3-mm DFN-8 Packages
•
High Performance Replacement for Popular
3-State Input Drivers
The TPS28225 is offered in an economical SOIC-8
and thermally enhanced low-size Dual Flat No-Lead
(DFN-8) packages. The driver is specified in the
extended temperature range of –40°C to 125°C with
the absolute maximum junction temperature 150°C.
APPLICATIONS
•
Multi-Phase DC-to-DC Converters with
Analog or Digital Control
•
•
•
Desktop and Server VRMs and EVRDs
Portable/Notebook Regulators
Synchronous Rectification for Isolated Power
Supplies
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2006, Texas Instruments Incorporated
TPS28225
www.ti.com
SLUS710–MAY 2006
FUNCTIONAL BLOCK DIAGRAM
6
2
VDD
BOOT
UVLO
1
8
UGATE
PHASE
7
EN /PG
THERMAL
SD
SHOOT
−
HLD−OFF
TIME
THROUGH
PROTECTION
VDD
27K
3−STATE
INPUT
3
5
4
PWM
LGATE
GND
CIRCUIT
13K
TYPICAL APPLICATIONS
One-Phase POL Regulator
V
DD
(4.5 V to 8 V)
V
IN
(3 V to 32 V − V
)
DD
6
2
VDD BOOT
TPS28225
1
8
UGATE
TPS40200
3
7
PHASE
PWM
VCC
OUT
FB
V
OUT
ENBL
LGATE 5
GND
GND
4
2
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SLUS710–MAY 2006
TYPICAL APPLICATIONS (continued)
Driver for Synchronous Rectification with Complementary Driven MOSFETs
12 V
35 V to 75V
V
= 3.3 V
OUT
Primary High Side
High Voltage Driver
V
DD
HB
DRIVE
HI
HI
LI
HO
HS
PWM
LINEAR
REG.
CONTROLLER
LO
DRIVE
LO
TPS28255
BOOT
2
6
7
V
VDD
SS
V
(4.5 V to 8 V)
DD
ISOLATION
AND
UGATE
EN/PG PHASE
1
8
FEEDBACK
3 PWM
5
4
LGATE
GND
3
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SLUS710–MAY 2006
TYPICAL APPLICATIONS (continued)
Multi-Phase Synchronous Buck Converter
V
DD
(4.5 V to 8 V)
V
IN
(3 V to 32 V − V
)
DD
6
VDD
BOOT
2
TPS28225
1
8
UGATE
3
7
PHASE
PWM
EN/PG
5
4
LGATE
GND
CS 1
To Controller
PWM1
PWM2
VIN
To Driver
To Driver
PWM3
PWM 4
6
VDD
BOOT
2
To Controller
CS 4 CSCN
TPS28225
1
8
UGATE
PHASE
GND
VOUT
GNDS
3
7
PWM
V
OUT
/PG
EN
Enable
5
4
LGATE
GND
ORDERING INFORMATION(1)(2)(3)
TEMPERATURE RANGE, TA = TJ
PACKAGE
TAPE AND REEL QTY.
PART NUMBER
TPS28225DT
Plastic 8-pin SOIC (D)
Plastic 8-pin SOIC (D)
Plastic 8-pin DFN (DRB)
Plastic 8-pin DFN (DRB)
250
2500
250
TPS28225DR
-40°C to 125°C
TPS28225DRBT
TPS28225DRBR
3000
(1) SOIC-8 (D) and DFN-8 (DRB) packages are available taped and reeled. Add T suffix to device type (e.g. TPS28225DT) to order taped
devices and suffix R to device type to order reeled devices.
(2) The SOIC-8 (D) and DFN-8 (DRB) package uses in Pb-Free lead finish of Pd-Ni-Au which is compatible with MSL level 1 at 255°C to
260°C peak reflow temperature to be compatible with either lead free or Sn/Pb soldering operations.
(3) In the DFN package, the pad underneath the center of the device is a thermal substrate. The PCB “thermal land” design for this
exposed die pad should include thermal vias that drop down and connect to one or more buried copper plane(s). This combination of
vias for vertical heat escape and buried planes for heat spreading allows the DFN to achieve its full thermal potential. This pad should
be either grounded for best noise immunity, and it should not be connected to other nodes.
4
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SLUS710–MAY 2006
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range (unless otherwise noted)
(1)(2)
TPS28225
VALUE
UNIT
–0.3 to 8.8
(3)
Input supply voltage range, VDD
Boot voltage, VBOOT
–0.3 to 33
DC
Phase voltage, VPHASE
–2 to 32 or VBOOT + 0.3 – VDD whichever is less
–7 to 33.1 or VBOOT + 0.3 – VDD whichever is less
–0.3 to 13.2
Pulse < 400 ns, E = 20 µJ
Input voltage range, VPWM, VEN/PG
VPHASE– 0.3 to VBOOT + 0.3, (VBOOT– VPHASE < 8.8)
V
Output voltage range, VUGATE
Pulse < 100 ns, E = 2 µJ
VPHASE– 2 to VBOOT + 0.3, (VBOOT– VPHASE < 8.8)
–0.3 to VDD + 0.3
Output voltage range, VLGATE
Pulse < 100 ns, E = 2 µJ
–2 to VDD + 0.3
ESD rating, HBM
2 k
ESD rating, HBM ESD rating, CDM
Continuous total power dissipation
Operating virtual junction temperature range, TJ
Operating ambient temperature range, TA
Storage temperature, Tstg
500
See Dissipation Rating Table
–40 to 150
–40 to 125
–65 to 150
300
°C
Lead temperature (soldering, 10 sec.)
(1) Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating
conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) These devices are sensitive to electrostatic discharge; follow proper device handling procedures.
(3) All voltages are with respect to GND unless otherwise noted. Currents are positive into, negative out of the specified terminal. Consult
Packaging Section of the Data book for thermal limitations and considerations of packages.
DISSIPATION RATINGS(1)
DERATING FACTOR
ABOVE TA = 25°C
TA < 25°C
POWER RATING
TA =70°C
POWER RATING
TA = 85°C
POWER RATING
BOARD
PACKAGE
RθJC
RθJA
High-K(2)
High-K(3)
D
39.4°C/W
1.4°C/W
100°C/W
48.5°C/W
10 mW/°C
1.25 W
2.58 W
0.8 W
0.65 W
1.34 W
DRB
20.6 mW/°C
1.65 W
(1) These thermal data are taken at standard JEDEC test conditions and are useful for the thermal performance comparison of different
packages. The cooling condition and thermal impedance RθJA of practical design is specific.
(2) The JEDEC test board JESD51-7, 3-inch x 3-inch, 4-layer with 1-oz internal power and ground planes and 2-oz top and bottom trace
layers.
(3) The JEDEC test board JESD51-5 with direct thermal pad attach, 3-inch x 3-inch, 4-layer with 1-oz internal power and ground planes and
2-oz top and bottom trace layers.
RECOMMENDED OPERATING CONDITIONS
over operating free-air temperature range (unless otherwise noted)
MIN
4.5
3
TYP
MAX
8
UNIT
V
VDD
VIN
TJ
Input supply voltage
7.2
Power input voltage
32 V–VDD
125
Operating junction temperature range
–40
°C
5
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SLUS710–MAY 2006
ELECTRICAL CHARACTERISTICS(1)
VDD = 7.2 V, EN/PG pulled up to VDD by 100-kΩ resistor, TA = TJ = –40°C to 125°C (unless otherwise noted)
PARAMETER
UNDER VOLTAGE LOCKOUT
TEST CONDITIONS
MIN
TYP MAX UNIT
Rising threshold
Falling threshold
Hysteresis
VPWM = 0 V
3.2
2.7
3.5
3.0
0.5
3.8
VPWM = 0 V
V
BIAS CURRENTS
IDD(off) Bias supply current
IDD Bias supply current
INPUT (PWM)
VEN/PG = low, PWM pin floating
VEN/PG = high, PWM pin floating
350
500
µA
VPWM = 5 V
VPWM = 0 V
185
–200
1.0
IPWM
Input current
µA
V
PWM 3-state rising threshold(2)
PWM 3-state falling threshold
VPWM PEAK = 5 V
3.4
3.8
4.0
2.1
tHLD_R 3-state shutdown Hold-off time
TMIN PWM minimum pulse to force UGATE pulse
250
30
ns
CL = 3 nF at UGATE , VPWM = 5 V
ENABLE/POWER GOOD (EN/PG)
Enable high rising threshold
Enable low falling threshold
Hysteresis
PG FET OFF
PG FET OFF
1.7
1.0
0.8
V
0.35
0.70
Power good output
VDD = 2.5 V
0.2
2.0
UPPER GATE DRIVER OUTPUT (UGATE)
Source resistance
500 mA source current
VUGATE-PHASE = 2.5 V
CL = 3 nF
1.0
2.0
10
Ω
A
(2)
Source current
tRU
Rise time
ns
Ω
Sink resistance
500 mA sink current
VUGATE-PHASE = 2.5 V
CL = 3 nF
1.0
2.0
10
2.0
(2)
Sink current
A
tFU
Fall time
ns
LOWER GATE DRIVER OUTPUT (LGATE)
Source resistance
500 mA source current
VLGATE = 2.5 V
CL = 3 nF
1.0
2.0
10
0.4
4.0
5
2.0
1.0
Ω
A
Source current(2)
tRL
Rise time(2)
ns
Ω
Sink resistance
Sink current(2)
Fall time(2)
500 mA sink current
VLGATE = 2.5 V
CL = 3 nF
A
ns
SWITCHING TIME
tDLU
tDLL
tDTU
tDTL
UGATE turn-off propagation Delay
CL = 3 nF
CL = 3 nF
CL = 3 nF
CL = 3 nF
14
14
14
14
LGATE turn-off propagation Delay
ns
Dead time LGATE turn-off to UGATE turn-on
Dead time UGATE turn-off to LGATE turn-on
BOOTSTRAP DIODE
VF Forward voltage
Forward bias current 100 mA
1.0
V
THERMAL SHUTDOWN
Rising threshold(2)
Falling threshold(2)
Hysteresis
150
130
160 170
140 150
20
°C
(1) Typical values for TA = 25°C
(2) Not tested in production
6
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SLUS710–MAY 2006
DEVICE INFORMATION
SOIC-8 Package (top view)
1
2
3
4
8
7
6
5
UGATE
BOOT
PWM
PHASE
EN/PG
VDD
GND
LGATE
DRB-8 Package (top view)
U G ATE
BOOT
PWM
1
2
3
4
8
7
6
5
PHASE
EN/PG
VDD
Exposed
Thermal
Die Pad
GND
LG AT E
FUNCTIONAL BLOCK DIAGRAM
6
7
2
VDD
BOOT
UVLO
UGATE
PHASE
1
8
EN /PG
THERMAL
SD
SHOOT
−
HLD−OFF
TIME
THROUGH
PROTECTION
VDD
27K
3−STATE
INPUT
3
5
4
PWM
LGATE
GND
CIRCUIT
13K
A. For the TPS28224DRB device the thermal PAD on the bottom side of package must be soldered and connected to
the GND pin and to the GND plane of the PCB in the shortest possible way. See Recommended Land Pattern in the
Application section.
7
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SLUS710–MAY 2006
TERMINAL FUNCTIONS
TERMINAL
DRB-8
I/O
DESCRIPTION
SOIC-8
NAME
1
1
UGATE
O
Upper gate drive sink/source output. Connect to gate of high-side power N-Channel MOSFET.
Floating bootstrap supply pin for the upper gate drive. Connect the bootstrap capacitor between
2
2
BOOT
I/O this pin and the PHASE pin. The bootstrap capacitor provides the charge to turn on the upper
MOSFET.
The PWM signal is the control input for the driver. The PWM signal can enter three distinct states
3
4
3
4
PWM
GND
I
during operation, see the 3-state PWM Input section under DETAILED DESCRIPTION for further
details. Connect this pin to the PWM output of the controller.
—
—
Ground pin. All signals are referenced to this node.
Exposed Thermal
die pad
Connect directly to the GND for better thermal performance and EMI
pad
LGATE
VDD
Lower gate drive sink/source output. Connect to the gate of the low-side power N-Channel
MOSFET.
5
6
5
6
O
I
Connect this pin to a 5-V bias supply. Place a high quality bypass capacitor from this pin to GND.
Enable/Power Good input/output pin with 1MΩ impedance. Connect this pin to HIGH to enable
and LOW to disable the IC. When disabled, the device draws less than 350µA bias current. If the
VDD is below UVLO threshold or over temperature shutdown occurs, this pin is internally pulled
low.
7
8
7
8
EN/PG
PHASE
I/O
I
Connect this pin to the source of the upper MOSFET and the drain of the lower MOSFET. This pin
provides a return path for the upper gate driver.
TIMING DIAGRAM
Enter into
3 −State
Enter into
3 −State
Normal switching
Exit 3 −State
at PWM rise
at PWM fall
90 %
3 −State
window
50 %
50 %
PWM
t
t
HLD_F
10 %
PWM_MIN
t
HLD_R
t
PWM Low and High after
3 −
RU
90 %
90 %
State to allow Bootstrap
Capacitor Restore Charge
90 %
t
DLU
UGATE
LGATE
10 %
10 %
t
FU
t
RL
90 %
t
90 %
DTU
t
90 %
DLL
t
DTL
10 %
10 %
t
FL
TRUTH TABLE
VDD FALLING > 3 V AND TJ < 150°C
EN/PG FALLING > 1.0 V
VDD RISING < 3.5 V
OR TJ > 160°C
PIN
EN/PG RISING
< 1.7 V
PWM > 1.5 V AND
PWM SIGNAL SOURCE IMPEDANCE
PWM < 1 V
TRISE/TFALL < 200 ns
>40 kΩ FOR > 250ns (3-State)(1)
LGATE
UGATE
EN/PG
Low
Low
Low
Low
Low
High
Low
Low
Low
Low
High
(1) To exit the 3-state condition, the PWM signal should go low. One Low PWM input signal followed by one High PWM input signal is
required before re-entering the 3-state condition.
8
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SLUS710–MAY 2006
TYPICAL CHARACTERISTICS
BIAS SUPPLY CURRENT
UNDER VOLTAGE LOCKOUT THRESHOLD
vs
vs
TEMPERATURE
(VEN/PG = Low, PWM Input Floating, VDD = 7.2V)
TEMPERATURE
500
4.00
480
460
440
3.75
3.50
Rising
3.25
3.00
2.75
2.50
2.25
2.00
420
400
380
360
Falling
340
320
300
−40
25
125
−40
25
125
T − Temperature −° C
J
T − Temperature −° C
J
Figure 1.
Figure 2.
ENABLE/POWER GOOD THRESHOLD
PWM 3-STATE THRESHOLDS, (5-V Input Pulses)
vs
vs
TEMPERATURE (VDD = 7.2 V)
TEMPERATURE, (VDD = 7.2 V)
2.00
5.0
4.5
4.0
2.5
Rising
1.75
1.50
Falling
1.25
1.00
0.75
0.50
0.25
0.00
3.0
2.5
2.0
1.5
Falling
Rising
1.0
0.5
0.0
−40
25
125
−40
25
125
T − Temperature −° C
J
T − Temperature −° C
J
Figure 3.
Figure 4.
9
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SLUS710–MAY 2006
TYPICAL CHARACTERISTICS (continued)
UGATE DC OUTPUT IMPEDANCE
LGATE DC OUTPUT IMPEDANCE
vs
vs
TEMPERATURE, (VDD = 7.2 V)
TEMPERATURE (VDD = 7.2 V)
2.00
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
1.75
1.50
R
1.25
1.00
0.75
0.50
0.25
0
SOURCE
R
SOURCE
R
SINK
R
SINK
0
−40
25
125
−40
25
125
T − Temperature −° C
J
T − Temperature −° C
J
Figure 5.
Figure 6.
UGATE RISE AND FALL TIME
vs
TEMPERATURE (VDD = 7.2 V, CLOAD = 3 nF)
LGATE RISE AND FALL TIME
vs
TEMPERATURE (VDD = 7.2 V, CLOAD = 3 nF)
14
13
15
14
13
Rising
12
11
Rising
12
11
10
9
10
9
8
7
Falling
Falling
8
7
6
5
4
6
−40
25
125
−40
25
125
T − Temperature −° C
J
T − Temperature −° C
J
Figure 7.
Figure 8.
10
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SLUS710–MAY 2006
TYPICAL CHARACTERISTICS (continued)
UGATE AND LGATE (Turning OFF Propagation Delays)
UGATE AND LGATE (Dead Time)
vs
vs
TEMPERTURE (VDD = 7.2 V, CLOAD = 3 nF)
TEMPERTURE (VDD = 7.2 V, CLOAD = 3 nF)
30
25
20.0
17.5
15.0
12.5
10.0
7.5
U
GATE
U
GATE
20
15
L
GATE
L
GATE
10
5.0
5
0
2.5
0.0
−40
25
125
−40
25
125
T − Temperature −° C
J
T − Temperature −° C
J
Figure 9.
Figure 10.
UGATE MINIMUM SHORT PULSE
BOOTSTRAP DIODE FORWARD VOLTAGE
vs
vs
TEMPERATURE (VDD = 7.2 V, CLOAD = 3 nF)
TEMPERATURE (VDD = 7.2 V, IF = 100 mA)
30
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
25
20
15
10
5
0
−40
25
125
−40
25
125
T − Temperature −° C
J
T − Temperature −° C
J
Figure 11.
Figure 12.
11
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TYPICAL CHARACTERISTICS (continued)
BIAS SUPPLY CURRENT
DRIVER DISSIPATED POWER
vs
vs
SWITCHING FREQUENCY
(VDD = 7.2 V, No Load, TJ = 25°C)
SWITCHING FREQUENCY
(Different Load Charge, VDD = 7.2 V, TJ = 25°C)
15
10
1200
1000
800
U
L
= 50 nC
= 50 nC
G
G
U
L
= 25 nC
= 100 nC
G
G
U
L
= 25 nC
= 50 nC
G
G
600
400
200
5
0
0
100 300 500 700 900 1100 1300 1500 1700 1900
100 300 500 700 900 1100 1300 1500 1700 1900
F
SW
− Switching Frequency − kHz
F
SW
− Switching Frequency − kHz
Figure 13.
Figure 14.
PWM INPUT RISING SWITCHING WAVEFORMS
= 7.2 V, C = 3 nF, T = 25°C
PWM INPUT FALLING SWITCHING WAVEFORMS
V
DD
L
J
V
DD
= 7.2 V, C = 3 nF, T = 25°C
L J
PWM
PWM
LGATE
UGATE
LGATE
UGATE
t − Time − 10 ns/div.
t − Time − 10 ns/div.
Figure 15.
Figure 16.
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TYPICAL CHARACTERISTICS (continued)
MINIMUM UGATE PULSE SWITCHING WAVEFORMS
NORMAL AND 3-STATE OPERATION
ENTER/EXIT CONDITIONS
V
DD
= 7.2 V, C = 3 nF, T = 25°C
L
J
PWM 30ns
PWM − 2 V/div.
LGATE
UGATE
3−St Trigger, High = 3−St
UGATE − 10 V/div.
LGATE − 10 V/div.
t − Time − 5 µs/div.
Figure 18.
t − Time − 20 ns/div.
Figure 17.
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DETAILED DESCRIPTION
UNDER VOLTAGE LOCKOUT (UVLO)
The TPS28225 incorporates an under voltage lockout circuit that keeps the driver disabled and external power
FETs in an OFF state when the input supply voltage VDD is insufficient to drive external power FETs reliably.
During power up, both gate drive outputs remain low until voltage VDD reaches UVLO threshold, typically 3.5V.
Once the UVLO threshold is reached, the condition of gate drive outputs is defined by the input PWM and
EN/PG signals. During power down the UVLO threshold is set lower, typically 3.0V. The 0.5-V hysteresis is
selected to prevent the driver from turning ON and OFF while the input voltage crosses UVLO thresholds,
especially with low slew rate. The TPS28225 has the ability to send a signal back to the system controller that
the input supply voltage VDD is insufficient by internally pulling down the EN/PG pin. The TPS28225 releases
EN/PG pin immediately after the VDD has risen above the UVLO threshold.
OUTPUT ACTIVE LOW
The output active low circuit effectively keeps the gate outputs low even if the driver is not powered up. This
prevents open gate conditions on the external power FETs and accidental turn ON when the main power stage
supply voltage is applied before the driver is powered up. For the simplicity, the output active low circuit is
shown in a block diagram as the resistor connected between LGATE and GND pins with another one connected
between UGATE and PHASE pins.
ENABLE/POWER GOOD
The Enable/Power Good circuit allows the TPS28225 to follow the PWM input signal when the voltage at EN/PG
pin is above 2.1 V maximum. This circuit has a unique two-way communication capability. This is illustrated by
Figure 19.
V
DD
= 4.5 V to 8 V
V
CC
Driver TPS28225
6
System
. 20 kΩ
EN/PG
2 V Rise
1 V Fall
Controller
1 kΩ
7
R
DS(on)
= 1 kΩ
UVLO
1 M
Thermal SD
Figure 19. Enable/Power Good Circuit
The EN/PG pin has approximately 1-kΩ internal series resistor. Pulling EN/PG high by an external ≥ 20-kΩ
resistor allows two-way communication between controller and driver. If the input voltage VDD is below UVLO
threshold or thermal shut down occurs, the internal MOSFET pulls EN/PG pin to GND through 1-kΩ resistor.
The voltage across the EN/PG pin is now defined by the resistor divider comprised by the external pull up
resistor, 1-kΩ internal resistor and the internal FET having 1kΩ RDS(on). Even if the system controller allows the
driver to start by setting its own enable output transistor OFF, the driver keeps the voltage at EN/PG low. Low
EN/PG signal indicates that the driver is not ready yet because the supply voltage VDD is low or that the driver is
in thermal shutdown mode. The system controller can arrange the delay of PWM input signals coming to the
driver until the driver releases EN/PG pin. If the input voltage VDD is back to normal, or the driver is cooled down
below its lower thermal shutdown threshold, then the internal MOSFET releases the EN/PG pin and normal
operation resumes under the external Enable signal applied to EN/PG input. Another feature includes an internal
1MΩ resistor that pulls EN/PG pin low and disables the driver in case the system controller accidentally loses
connection with the driver. This could happen if, for example, the system controller is located on a separate PCB
daughter board.
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DETAILED DESCRIPTION (continued)
The EN/PG pin can serve as the second pulse input of the driver additionally to PWM input. The delay between
EN/PG and the UGATE going high, provided that PWM input is also high, is only about 30ns. If the PWM input
pulses are synchronized with EN/PG input, then when PWM and EN/PG are high, the UGATE is high and
LGATE is low. If both PWM and EN/PG are low, then UGATE and LGATE are both low as well. This means the
driver allows operation of a synchronous buck regulator as a convertional buck regulator using the body diode of
the low side power MOSFET as the freewheeling diode. This feature can be useful in some specific applications
to allow startup with a pre-biased output or, to improve the efficiency of buck regulator when in power saving
mode with low output current.
3-STATE INPUT
As soon as the EN/PG pin is set high and input PWM pulses are initiated (see 1 below(1)). The dead-time control
circuit ensures that there is no overlapping between UGATE and LGATE drive outputs to eliminate shoot
through current through the external power FETs. Additionally to operate under periodical pulse sequencing, the
TPS28225 has a self-adjustable PWM 3-state input circuit. The 3-state circuit sets both gate drive outputs low,
and thus turns the external power FETs OFF if the input signal is in a high impedance state for at least 250 ns
typical. At this condition, the PWM input voltage level is defined by the internal 27kΩ to 13kΩ resistor divider
shown in the block diagram. This resistor divider forces the input voltage to move into the 3-state window.
Initially the 3-state window is set between 1.0-V and 2.0-V thresholds. The lower threshold of the 3-state window
is always fixed at about 1.0 V. The higher threshold is adjusted to about 75% of the input signal amplitude. The
self-adjustable upper threshold allows shorter delay if the input signal enters the 3-state window while the input
signal was high, thus keeping the high-side power FET in ON state just slightly longer then 250 ns time constant
set by an internal 3-state timer. Both modes of operation, PWM input pulse sequencing and at the 3-state
condition, are illustrated in the timing diagrams shown in Figure 18. The self-adjustable upper threshold allows
operation in wide range amplitude of input PWM pulse signals. The waveforms in Figure 20 and Figure 21
illustrate operation at normal and 3-state mode with the input pulse amplitudes 6 V and 2.5 V accordingly. After
entering into the 3-state window and staying within the window for the hold-off time, the PWM input signal level
is defined by the internal resistor divider and, depending on the input pulse amplitude, can be pulled up above
the normal PWM pulse amplitude (Figure 21) or down below the normal input PWM pulse (Figure 20). To exit
from the 3-state operation mode, the input signal should go low and then high at least once. This is necessary to
restore the voltage across the bootstrap capacitor that could be discharged during the 3-state mode if the 3-state
condition lasts long enough.
Figure 20. 6-V Amplitude PWM Pulse
Figure 21. 2.5-V Amplitude PWM Pulse
(1) The driver sets UGATE low and LGATE high when PWM is low. When the PWM goes high, UGATE goes high and LGATE goes low.
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DETAILED DESCRIPTION (continued)
IMPORTANT NOTE: Any external resistor between PWM input and GND with the value lower than 40kΩ can
interfere with the 3-state thresholds. If the driver is intended to operate in the 3-state mode, any resistor below
40kΩ at the PWM and GND should be avoided. A resistor lower than 3.5kΩ connected between the PWM and
GND completely disables the 3-state function. In such case, the 3-state window shrinks to zero and the lower
3-state threshold becomes the boundary between the UGATE staying low and LGATE being high and vice versa
depending on the PWM input signal applied. It is not necessary to use a resistor <3.5kΩ to avoid the 3-state
condition while using a controller that is 3-state capable. If the rise and fall time of the input PWM signal is
shorter than 250ns, then the driver never enter into the 3-state mode.
In the case where the low-side MOSFET of a buck converter stays on during shutdown, the 3-state feature can
be fused to avoid negative resonent voltage across the output capacitor. This feature also can be used during
start up with a pre-biased output in the case where pulling the output low during the startup is not allowed due to
system requirements. If the system controller does not have the 3-state feature and never goes into the
high-impedance state, then setting the EN/PG signal low will keep both gate drive outputs low and turn both low-
and high-side MOSFETs OFF during the shut down and start up with the pre-biased output.
The self-adjustable input circuit accepts wide range of input pulse amplitudes (2V up to 13.2V) allowing use of a
variety of controllers with different outputs including logic level. The wide PWM input voltage allows some
flexibility if the driver is used in secondary side synchronous rectifier circuit. The operation of the TPS28225 with
a 12-V input PWM pulse amplitude, and with VDD = 7.2V and VDD = 5V respectively is shown in Figure 22 and
Figure 23.
Figure 22. 12-V PWM Pulse at VDD = 7.2 V
Figure 23. 12-V PWM Pulse at VDD = 5 V
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DETAILED DESCRIPTION (continued)
BOOTSTRAP DIODE
The bootstrap diode provides the supply voltage for the UGATE driver by charging the bootstrap capacitor
connected between BOOT and PHASE pins from the input voltage VDD when the low-side FET is in ON state.
At the very initial stage when both power FETs are OFF, the bootstrap capacitor is pre-charged through this
path including the PHASE pin, output inductor and large output capacitor down to GND. The forward voltage
drop across the diode is only 1.0V at bias current 100 mA. This allows quick charge restore of the bootstrap
capacitor during the high-frequency operation.
UPPER AND LOWER GATE DRIVERS
The upper and lower gate drivers charge and discharge the input capacitance of the power MOSFETs to allow
operation at switching frequencies up to 2 MHz. The output stage consists of a P-channel MOSFET providing
source output current and an N-channel MOSFET providing sink current through the output stage. The ON state
resistances of these MOSFETs are optimized for the synchronous buck converter configuration working with low
duty cycle at the nominal steady state condition. The UGATE output driver is capable of propagating PWM input
puses of less than 30-ns while still maintaining proper dead time to avoid any shoot through current conditions.
The waveforms related to the narrow input PWM pulse operation are shown in Figure 17.
DEAD TIME CONTROL
The dead-time control circuit is critical for highest efficiency and no shoot through current operation througout
the whole duty cycle range with the different power MOSFETs. By sensing the output of driver going low, this
circuit does not allow the gate drive output of another driver to go high until the first driver output falls below the
specified threshold. This approach to control the dead time is called adaptive. The overall dead time also
includes the fixed portion to ensure that overlapping never exists. The typical dead time is around 14 ns,
although it varies over the driver internal tolerances, layout and external MOSFET parasitic inductances. The
proper dead time is maintained whenever the current through the output inductor of the power stage flows in the
forward or reverse direction. Reverse current could happen in a buck configuration during the transients or while
dynamically changing the output voltage on the fly, as some microprocessors require. Because the dead time
does not depend on inductor current direction, this driver can be used both in buck and boost regulators or in
any bridge configuration where the power MOSFETs are switching in a complementary manner. Keeping the
dead time at short optimal level boosts efficiency by 1% to 2% depending on the switching frequency. Measured
switching waveforms in one of the practical designs show 10-ns dead time for the rising edge of PHASE node
and 22 ns for the falling edge (Figure 29 and Figure 30 in the Application Section of the data sheet).
Large non-optimal dead time can cause duty cycle modulation of the dc-to-dc converter during the operation
point where the output inductor current changes its direction right before the turn ON of the high-side MOSFET.
This modulation can interfere with the controller operation and it impacts the power stage frequency response
transfer function. As the result, some output ripple increase can be observed. The TPS28225 driver is designed
with the short adaptive dead time having fixed delay portion that eliminates risk of the effective duty cycle
modulation at the described boundary condition.
THERMAL SHUTDOWN
If the junction temperature exceeds 160°C, the thermal shutdown circuit will pull both gate driver outputs low and
thus turning both, low-side and high-side power FETs OFF. When the driver cools down below 140°C after a
thermal shutdown, then it resumes its normal operation and follows the PWM input and EN/PG signals from the
external control circuit. While in thermal shutdown state, the internal MOSFET pulls the EN/PG pin low, thus
setting a flag indicating the driver is not ready to continue normal operation. Normally the driver is located close
to the MOSFETs, and this is usually the hottest spots on the PCB. Thus, the thermal shutdown feature of
TPS28225 can be used as an additional protection for the whole system from overheating.
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APPLICATION INFORMATION
SWITCHING THE MOSFETs
Driving the MOSFETs efficiently at high switching frequencies requires special attention to layout and the
reduction of parasitic inductances. Efforts need to be done both at the driver’s die and package level and at the
PCB layout level to keep the parasitic inductances as low as possible. Figure 24 shows the main parasitic
inductances and current flow during turning ON and OFF of the MOSFET by charging its CGS gate capacitance.
L bond wire
L trace
L pin
VDD
6
5
4
I source
Cvdd
Rsource
L trace
L trace
L bond wire
L pin
Driver
Output
Stage
Rg
LGATE
Rsink
I sink
Cgs
L pin
L bond wire
L trace
GND
Figure 24. MOSFET Drive Paths and Main Circuit Parasitics
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APPLICATION INFORMATION (continued)
The ISOURCE current charges the gate capacitor and the ISINK current discharges it. The rise and fall time of
voltage across the gate defines how quickly the MOSFET can be switched. The timing parameters specified in
datasheet for both upper and lower driver are shown in Figure 15 and Figure 16 where 3-nF load capacitor has
been used for the characterization data. Based on these actual measurements, the analytical curves in
Figure 25 and Figure 26 show the output voltage and current of upper and low side drivers during the
discharging of load capacitor. The left waveforms show the voltage and current as a function of time, while the
right waveforms show the relation between the voltage and current during fast switching. These waveforms
show the actual switching process and its limitations because of parasitic inductances. The static VOUT/ IOUT
curves shown in many datasheets and specifications for the MOSFET drivers do not replicate actual switching
condition and provide limited information for the user.
Voltage
Current
t − Time − ns
LGATE Current, A
Figure 25. LGATE Turning Off Voltage and Sink Current vs Time (Related Switching Diagram (right))
Voltage
Current
t − Time − ns
UGATE Current, A
Figure 26. UGATE Turning Off Voltage and Sink Current vs Time (Related Switching Diagram (right)_
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APPLICATION INFORMATION (continued)
Turning Off of the MOSFET needs to be done as fast as possible to reduce switching losses. For this reason the
TPS28225 driver has very low output impedance specified as 0.4Ω typ for lower driver and 1Ω typ for upper
driver at dc current. Assuming 8-V drive voltage and no parasitic inductances, one can expect an initial sink
current amplitude of 20A and 8A respectively for the lower and upper drivers. With pure R-C discharge circuit for
the gate capacitor, the voltage and current waveforms are expected to be exponential. However, because of
parasitic inductances, the actual waveforms have some ringing and the peak current for the lower driver is about
4A and about 2.5A for the upper driver (Figure 25 and Figure 26). The overall parasitic inductance for the lower
drive path is estimated as 4nH and for the upper drive path as 6nH. The internal parasitic inductance of the
driver, which includes inductances of bonded wires and package leads, can be estimated for SOIC-8 package
as 2nH for lower gate and 4nH for the upper gate. Use of DFN-8 package reduces the internal parasitic
inductances by approximately 50%.
Layout Recommendations
To improve the switching characteristicsand efficiency of a design, the following layout rules need to be followed.
•
•
•
Locate the driver as close as possible to the MOSFETs.
Locate the VDD and bootstrap capacitors as close as possible to the driver.
Pay special attention to the GND trace. Use the thermal pad of the DFN-8 package as the GND by
connecting it to the GND pin. The GND trace or pad from the driver goes directly to the source of the
MOSFET but should not include the high current path of the main current flowing through the drain and
source of the MOSFET.
•
•
Use a similar rule for the PHASE node as for the GND.
Use wide traces for UGATE and LGATE closely following the related PHASE and GND traces. Eighty to 100
mils width is preferable where possible.
•
•
Use at least 2 or more vias if the MOSFET driving trace needs to be routed from one layer to another. For
the GND the number of vias are determined not only by the parasitic inductance but also by the
requirements for the thermal pad.
Avoid PWM and enable traces going close to the PHASE node and pad where high dV/dT voltage can
induce significant noise into the relatively high impedance leads.
It should be taken into account that poor layout can cause 3% to 5% less efficiency versus a good layout design
and can even decrease the reliability of the whole system.
Figure 27. One of Phases Driven by TPS28225 Driver in 4-phase VRM Reference Design
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APPLICATION INFORMATION (continued)
The schematic of one of the phases in a multi-phase synchronous buck regulator and the related layout are
shown in Figure 27 and Figure 28. These help to illustrate good design practices. The power stage includes one
high-side MOSFET Q10 and two low-side MOSFETS (Q8 and Q9). The driver (U7) is located on bottom side of
PCB close to the power MOSFETs. The related switching waveforms during turning ON and OFF of upper FET
are shown in Figure 29 and Figure 30. The dead time during turning ON is only 10ns (Figure 29) and 22ns
during turning OFF (Figure 30).
Figure 28. Component Placement Based on Schematic in Figure 27
Figure 29. Phase Rising Edge Switching Waveforms (20ns/div) of the Power Stage in Figure 27
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APPLICATION INFORMATION (continued)
Figure 30. Phase Falling Edge Switching Waveforms (10ns/div) of the Power State in Figure 27
LIST OF MATERIALS
The list of materials for this specific example is provided in the table. The component vendors are not limited to
those shown in the table below. It should be notd that, in this example, the power MOSFET packages were
chosen with drains on top. The decoupling capacitors C47, C48, C65, and C66 were chosen to have low
profiles. This allows the designer to meet good layout rules and place a heatsink on top of the FETs using an
electrically isolated and thermally conductive pad.
List of Materials
REF DES
COUNT
DESCRIPTION
MANUFACTURE
PART NUMBER
C47, C48,
C65, C66
4
Capacitor, ceramic, 4.7 µF, 16 V, X5R 10%, low profile 0.95 mm, 1206
TDK
C3216X5R1C475K
C41, C42
C50, C51
C23
2
2
1
3
Capacitor, ceramic, 10 µF, 16 V, X7R 10%, 1206
Capacitor, ceramic, 1000 pF, 50 V, X7R, 10%, 0603
Capacitor, ceramic, 0.22 µF, 16 V, X7R, 10%, 0603
Capacitor, ceramic, 1 µF, 16 V, X7R, 10%, '0603
TDK
Std
Std
Std
C3216X7R1C106K
Std
Std
Std
C25, C49,
C71
L3
1
2
1
1
2
1
Inductor, SMT, 0.12 µH, 31 A, 0.36 mΩ, 0.400 x 0.276
Mosfet, N-channel, VDS 30 V, RDS 2.4 mΩ, ID 45 A, LFPAK-i
Mosfet, N-channel, VDS 30 V, RDS 6.2 mΩ, ID 30 A, LFPAK-i
Resistor, chip, 0 Ω, 1/10 W, 1%, '0805
Pulse
Renesas
Renesas
Std
PA0511-101
RJK0301DPB-I
RJK0305DPB-I
Std
Q8, Q9
Q10
R32
R51, R52
U7
Resistor, chip, 2.2 Ω, 1/10 W, 1%, '0805
Std
Std
Device, High Frequency 4-A Sink Synchronous Buck MOSFET Driver,
DFN-8
Texas Instruments
TPS28225DRB
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EFFICIENCY OF POWER STAGE vs LOAD CURRENT AT DIFFERENT SWITCHING
FREQUENCIES
Efficiency achieved using TPS28225 driver with 8-V drive at different switching frequencies a similar industry 5-V
driver using the power stage in Figure 27 is shown in Figure 33, Figure 35, Figure 34, Figure 31 and Figure 32.
EFFICIENCY
vs
LOAD CURRENT
EFFICIENCY
vs
LOAD CURRENT
90
85
90
85
80
75
80
75
TI: 400kHz
Ind: 400kHz
TI: 500kHz
Ind: 500kHz
5
10
15
20
25
30
35
5
10
15
20
25
30
35
C
L
− Load Currnt − A
C
L
− Load Currnt − A
Figure 31.
Figure 32.
EFFICIENCY
vs
LOAD CURRENT
90
85
TI: 600kHz
Ind: 600kHz
80
75
5
10
15
20
25
30
35
C − Load Currnt − A
L
Figure 33.
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EFFICIENCY
vs
LOAD CURRENT
EFFICIENCY
vs
LOAD CURRENT
90
85
90
85
TI: 700kHz
TI: 800kHz
Ind: 800kHz
Ind: 700kHz
80
80
75
75
5
10
15
20
25
30
35
5
10
15
20
25
30
35
C
L
− Load Currnt − A
Figure 34.
C
L
− Load Currnt − A
Figure 35.
When using the same power stage, the driver with the optimal drive voltage and optimal dead time can boost
efficiency up to 5%. The optimal 8-V drive voltage versus 5-V drive contributes 2% to 3% efficiency increase and
the remaining 1% to 2% can be attributed to the reduced dead time. The 7-V to 8-V drive voltage is optimal for
operation at switching frequency range above 400kHz and can be illustrated by observing typical RDS(on) curves
of modern FETs as a function of their gate drive voltage. This is shown in Figure 36.
DRIVE LOSS
vs
SWITCHING FREQUENCY
2.0
12−V
Estimation
1.5
SOIC−8
Package
Limit at 45°C
Rdson
Vg = 7V
@
Rdson
@
Vg = 5V
1.0
0.5
8−V
TPS28225
5−V
Ind. Std.
0.0
400
500
600
700
800
F
SW
− Switching Frequency − kHz
Figure 36. RDS(on) of MOSFET as Function of VGS
Figure 37. Drive Power as Function of VGS and FSW
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The plots show that the RDS(on) at 5-V drive is substantially larger than at 7 V and above that the RDS(on) curve is
almost flat. This means that moving from 5-V drive to an 8-V drive boosts the efficiency because of lower RDS(on)
of the MOSFETs at 8 V. Further increase of drive voltage from 8 V to 12 V only slightly decreases the
conduction losses but the power dissipated inside the driver increases dramatically (by 125%). The power
dissipated by the driver with 5V, 8V and 12V drive as a function of switching frequency from 400kHz to 800kHz.
It should be noted that the 12-V driver exceeds the maximum dissipated power allowed for an SOIC-8 package
even at 400-kHz switching frequency.
RELATED PRODUCTS
•
•
TPS40090, 2/3/4-Phase Multi-Phase Controller
TPS40091, 2/3/4-Phase Multi-Phase Controller
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TPS28225D CAD模型
引脚图
封装焊盘图
TPS28225D 替代型号
| 型号 | 制造商 | 描述 | 替代类型 | 文档 |
| TPS28225DR | TI | High-Frequency 4-A Sink Synchronous MOSFET Driver | 类似代替 |
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| TPS28225DG4 | TI | 8-Pin High Frequency 4-Amp Sink Synchronous MOSFET Driver 8-SOIC -40 to 125 | 类似代替 |
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TPS28225D 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| TPS28225DG4 | TI | 8-Pin High Frequency 4-Amp Sink Synchronous MOSFET Driver 8-SOIC -40 to 125 | 获取价格 |
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| TPS28225DR | TI | High-Frequency 4-A Sink Synchronous MOSFET Driver | 获取价格 |
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| TPS28225DRBR | TI | High-Frequency 4-A Sink Synchronous MOSFET Driver | 获取价格 |
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| TPS28225DRBRG4 | TI | 8-Pin High Frequency 4-Amp Sink Synchronous MOSFET Driver 8-SON -40 to 125 | 获取价格 |
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| TPS28225DRBT | TI | High-Frequency 4-A Sink Synchronous MOSFET Driver | 获取价格 |
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| TPS28225DRBTG4 | TI | BUF OR INV BASED MOSFET DRIVER, PDSO8, 3 X 3 MM, GREEN, PLASTIC, DFN-8 | 获取价格 |
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| TPS28225DT | TI | High-Frequency 4-A Sink Synchronous MOSFET Driver | 获取价格 |
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| TPS28225TDRBRQ1 | TI | High-Frequency 4-A Sink Synchronous MOSFET Drivers | 获取价格 |
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| TPS28225TDRQ1 | TI | 具有 4V UVLO、用于同步整流的汽车类 4A、27V 半桥栅极驱动器 | D | 8 | -40 to 105 | 获取价格 |
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| TPS28225_15 | TI | TPS28225 High-Frequency 4-A Sink Synchronous MOSFET Drivers | 获取价格 |
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