概述
规格参数
数据手册MBR3050CT 概述
30.0 AMPS. Schottky Barrier Rectifiers 30.0安培。肖特基势垒整流器 整流二极管
MBR3050CT 规格参数
| 是否Rohs认证： | 符合 | 生命周期： | Active |
| 包装说明： | R-PSFM-T3 | Reach Compliance Code： | compliant |
| ECCN代码： | EAR99 | HTS代码： | 8541.10.00.80 |
| 风险等级： | 5.36 | Is Samacsys： | N |
| 其他特性： | FREE WHEELING DIODE, LOW POWER LOSS | 应用： | EFFICIENCY |
| 外壳连接： | CATHODE | 配置： | COMMON CATHODE, 2 ELEMENTS |
| 二极管元件材料： | SILICON | 二极管类型： | RECTIFIER DIODE |
| JEDEC-95代码： | TO-220AB | JESD-30 代码： | R-PSFM-T3 |
| JESD-609代码： | e3 | 最大非重复峰值正向电流： | 200 A |
| 元件数量： | 2 | 相数： | 1 |
| 端子数量： | 3 | 最高工作温度： | 150 °C |
| 最低工作温度： | -65 °C | 最大输出电流： | 15 A |
| 封装主体材料： | PLASTIC/EPOXY | 封装形状： | RECTANGULAR |
| 封装形式： | FLANGE MOUNT | 认证状态： | Not Qualified |
| 最大重复峰值反向电压： | 50 V | 表面贴装： | NO |
| 技术： | SCHOTTKY | 端子面层： | Tin (Sn) |
| 端子形式： | THROUGH-HOLE | 端子位置： | SINGLE |
| Base Number Matches： | 1 |
MBR3050CT 数据手册
通过下载MBR3050CT数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载MBR3035CT THRU MBR30100CT
30.0 AMPS. Schottky Barrier Rectifiers
Voltage Range
35 to 100 Volts
Current
30.0 Amperes
TO-220
Features
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Plastic material used carries Underwriters Laboratory
Classifications 94V-0
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Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
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High temperature soldering guaranteed:
260oC/10 seconds,0.25”(6.35mm)from case
Mechanical Data
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Cases: JEDEC TO-220 molded plastic
Terminals: Leads solderable per MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
MBR MBR MBR MBR MBR MBR
Symbol
Type Number
Units
3035
CT
3045
CT
3050
CT
3060
CT
3090 30100
CT
90
63
90
CT
100
70
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
35
24
35
45
31
45
50
35
50
60
42
60
V
V
V
Maximum DC Blocking Voltage
100
Maximum Average Forward Rectified Current at
30
A
I(AV)
IFRM
TC=130oC
Peak Repetitive Forward Current (Rated VR, Square
Wave, 20KHz) at Tc=130oC
30.0
250
A
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
A
A
IFSM
IRRM
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at (Note 2)
IF=15A, Tc=25OC
1.0
0.5
0.7
0.6
0.82
0.73
0.75
0.65
-
0.84
0.70
0.94
0.82
IF=15A, Tc=125OC
V
VF
IF=30A, Tc=25OC
IF=30A, Tc=125OC
-
Maximum Instantaneous Reverse Current
@ Tc=25℃ at Rated DC Blocking Voltage Per Leg
@ Tc=125℃ (Note 2)
0.2
40
0.2
50
0.2
60
mA
mA
IR
Voltage Rate of Change, (Rated VR)
dV/dt
1,000
V/uS
RθJC
℃/W
Maximum Thermal Resistance Per Leg (Note 3)
1.0
1.5
Cj
TJ
600
460
320
pF
℃
℃
Typical Junction Capacitance
Operating Junction Temperature Range
Storage Temperature Range
-65 to +150
-65 to +175
TSTG
Notes: 1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg, with Heatsink size (4”x6”x0.25”) Al-Plate.
- 196 -
RATINGS AND CHARACTERISTIC CURVES (MBR3035CT THRU MBR30100CT)
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT PER LEG
FIG.1- FORWARD CURRENT DERATING CURVE
30
300
250
RESISTIVE OR
INDUCTIVE LOAD
Tj=Tj max.
8.3ms Single Half Sine Wave
JEDEC Method
24
18
200
150
12
100
50
6
0
0
1
0
50
100
150
10
100
CASE TEMPERATURE. (oC)
NUMBER OF CYCLES AT 60Hz
FIG.3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS PER LEG
FIG.4- TYPICAL REVERSE CHARACTERISTICS
PER LEG
50
10
50
10
Tj=1500C
Pulse Width=300
1% Duty Cycle
s
Tj=1250C
1
1
Tj=250C
Tj=750C
0.1
0.01
0.1
Tj=250C
MBR3035CT-MBR3045CT
MBR3050CT & MBR3060CT
MBR3090CT-MBR30100CT
MBR3035CT-MBR3045CT
MBR3050CT & MBR30100CT
0.01
0.001
0
20
40
60
80
100
120
140
0
1.0
1.2
1.1
0.1
0.9
0.6 0.7 0.8
0.2 0.3 0.4 0.5
FORWARD VOLTAGE. (V)
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.6- TYPICAL TRANSIENT THERMAL IMPEDANCE
PER LEG
FIG.5- TYPICAL JUNCTION CAPACITANCE PER LEG
5,000
100
10.0
1
Tj=250C
f=1.0MHz
Vsig=50mVp-p
1,000
MBR3035CT-MBR3045CT
MBR3050CT & MBR3060CT
MBR3090CT-MBR30100CT
100
0.1
0.01
0.1
1
10
100
0.1
1
10
100
REVERSE VOLTAGE. (V)
T, PULSE DURATION. (sec)
- 197 -
MBR3050CT 相关器件
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| MBR3050CT-B | MCC | Rectifier Diode, | 获取价格 |
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| MBR3050CT-BP | MCC | Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 50V V(RRM), Silicon, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 | 获取价格 |
|
| MBR3050CT-BP-HF | MCC | Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 50V V(RRM), Silicon, TO-220AB, | 获取价格 |
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| MBR3050CT?? | MDD | TO-220AB | 获取价格 |
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| MBR3050CTR | THINKISEMI | 30.0 Amperes Heatsink Dual Common Anode Schottky Half Bridge Rectifiers | 获取价格 |
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| MBR3050F | ASEMI | Dual High-Voltage Schottky Rectifiers | 获取价格 |
|
| MBR3050FCT | PANJIT | SCHOTTKY BARRIER RECTIFIERS | 获取价格 |
|
| MBR3050FCT | CTC | SCHOTTKY BARRIER RECTIFIERS | 获取价格 |
|
| MBR3050FCTE3/TU | MICROSEMI | Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 50V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN | 获取价格 |
|
| MBR3050LCT | RECTRON | Reverse Voltage Vr : 50 V;Forward Current Io : 30 A;Max Surge Current : 250 A;Forward Voltage Vf : 0.55 V;Reverse Current Ir : 500 uA;Recovery Time : N/A;Package / Case : TO-220AB;Mounting Style : Through Hole | 获取价格 |
|
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