概述
规格参数
数据手册1N6374 概述
TRANSZORB® Transient Voltage Suppressors TRANSZORB®瞬态电压抑制器 瞬态抑制器
1N6374 规格参数
| 是否Rohs认证： | 不符合 | 生命周期： | Obsolete |
| Reach Compliance Code： | unknown | 风险等级： | 5.36 |
| Is Samacsys： | N | 最大钳位电压： | 11.5 V |
| 二极管类型： | TRANS VOLTAGE SUPPRESSOR DIODE | 极性： | UNIDIRECTIONAL |
| 最大重复峰值反向电压： | 8 V | 子类别： | Transient Suppressors |
| 表面贴装： | NO | Base Number Matches： | 1 |
1N6374 数据手册
通过下载1N6374数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载ICTE5.0 thru ICTE18C, 1N6373 thru 1N6386
Vishay General Semiconductor
TRANSZORB® Transient Voltage Suppressors
FEATURES
• Glass passivated chip junction
• Available inuni-directional and bi-directional
• 1500 W peak pulse power capability with a
10/1000 µs waveform, repetitive rate (duty
cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
Case Style 1.5KE
• Low incremental surge resistance
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching
and lighting on ICs, MOSFET, signal lines of sensor
units for consumer, computer, industrial and
telecommunication.
VWM
PPPM
PD
5.0 V to 18 V
1500 W
6.5 W
IFSM
200 A
TJ max.
175 °C
MECHANICAL DATA
Case: Molded epoxy body over passivated junction
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, high reliability/
automotive grade (AEC Q101 qualified)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional types, use C suffix (e.g. ICTE-18C).
Electrical characteristics apply in both directions.
E3 suffix meets JESD 201 class 1A whisker test, HE3
suffix meets JESD 201 class 2 whisker test
Polarity: For uni-directional types the color band
denotes cathode end, no marking on bi-directional
types
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
PPPM
IPPM
LIMIT
1500
UNIT
W
Peak pulse power dissipation with a 10/1000 µs waveform (1) (Fig. 1)
Peak pulse current with a 10/1000 µs waveform (1) (Fig. 3)
Power dissipation on infinite heatsink at TL = 75 °C (Fig. 8)
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)
Maximum instantaneous forward voltage at 100 A for uni-directional only
Operating junction and storage temperature range
See next table
6.5
A
PD
W
IFSM
200
A
VF
3.5
V
TJ, TSTG
- 55 to + 175
°C
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2
(2) 8.3 ms single half sine-wave, duty cycle = 4 pulses per minute maximum
Document Number: 88356
Revision: 21-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
ICTE5.0 thru ICTE18C, 1N6373 thru 1N6386
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (JEDEC REGISTERED DATA) (T = 25 °C unless otherwise noted)
A
MINIMUM (3)
BREAKDOWN
VOLTAGE
MAXIMUM
REVERSE
LEAKAGE
AT VWM
MAXIMUM
CLAMPING
VOLTAGE
MAXIMUM
CLAMPING
VOLTAGE AT
MAXIMUM
PEAK
PULSE
STAND-OFF
VOLTAGE
GENERAL
SEMICONDUCTOR
PART NUMBER
JEDEC TYPE
NUMBER
AT IPP = 1.0 A
I
PP = 10 A
V
WM (V)
CURRENT
AT 1.0 mA
I
PP (A)
ID (µA)
VC (V)
VC (V)
V
BR (V)
UNI-DIRECTIONAL TYPES
1N6373 (2)
1N6374
1N6375
1N6376
1N6377
1N6378
ICTE-5 (2)
5.0
8.0
6.0
9.4
300
25.0
2.0
7.1
7.5
160
100
90
ICTE-8
11.3
13.7
16.1
20.1
24.2
11.5
14.1
16.5
20.6
25.2
ICTE-10
ICTE-12
ICTE-15
ICTE-18
10.0
12.0
15.0
18.0
11.7
14.1
17.6
21.2
2.0
70
2.0
60
2.0
50
BI-DIRECTIONAL TYPES
1N6382
1N6383
1N6384
1N6385
1N6386
ICTE-8C
ICTE-10C
ICTE-12C
ICTE-15C
ICTE-18C
8.0
9.4
50.0
2.0
2.0
2.0
2.0
11.4
14.1
16.7
20.8
24.8
11.6
14.5
17.1
21.4
25.5
100
90
10.0
12.0
15.0
18.0
11.7
14.1
17.6
21.2
70
60
50
Notes:
(1) “C” Suffix indicates bi-directional
(2) ICTE-5 and 1N6373 are not available as bi-directional
(3) The minimum breakdown voltage as shown takes into consideration the 1 V tolerance normally specified for power supply regulation on
most integrated circuit manufacturers data sheets. Please consult factory for devices that require reduced clamping voltages where tighter
regulated power supply voltages are employed
(4) Clamping factor: 1.33 at full rated power; 1.20 at 50 % rated power; Clamping factor: the ratio of the actual VC (Clamping Voltage) to the
V
BR (Breakdown Voltage) as measured on a specific device
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
ICTE-5-E3/54
ICTE-5HE3/54 (1)
0.968
54
54
1400
1400
13" diameter paper tape and reel
13" diameter paper tape and reel
0.968
Note:
(1) Automotive grade AEC Q101 qualified
www.vishay.com
2
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88356
Revision: 21-Oct-08
ICTE5.0 thru ICTE18C, 1N6373 thru 1N6386
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T = 25 °C unless otherwise noted)
A
100 000
10 000
1000
100
Non-Repetitive Pulse
Waveform shown in Fig. 3
Measured at
Zero Bias
T
A = 25 °C
10
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Measured at Stand-Off
Voltage VWM
1
0.1
100
0.1 µs
1.0 µs
10 µs
100 µs
1.0 ms
10 ms
10
100
200
1.0
td - Pulse Width (s)
VBR - Breakdown Voltage (V)
Figure 4. Typical Junction Capacitance Uni-Directional
Figure 1. Peak Pulse Power Rating Curve
100
100 000
Measured at
Zero Bias
Bi-Directional Type
75
50
Non-Repetitive Pulse
Waveform shown in Fig. 3
TA = 25 °C
10 000
1000
100
25
0
Measured at Stand-Off
Voltage VWM
1.0
10
100
200
0
25
50
75
100
125
150 175
200
TJ - Initial Temperature (°C)
VBR - Breakdown Voltage (V)
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
Figure 5. Typical Junction Capacitance
150
200
TJ = 25 °C
Pulse Width (td)
TJ = TJ max.
tr = 10 µs
8.3 ms Single Half Sine-Wave
is defined as the Point
where the Peak Current
decays to 50 % of IPPM
Peak Value
100
50
IPPM
100
50
0
Half Value -
IPP
2
IPPM
10/1000 µs Waveform
as defined by R.E.A.
td
10
1.0
3.0
4.0
0
2.0
1
5
10
50
100
t - Time (ms)
Number of Cycles at 60 Hz
Figure 3. Pulse Waveform
Figure 6. Maximum Non-Repetitive Forward Surge Current
Uni-Directional Only
Document Number: 88356
Revision: 21-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
ICTE5.0 thru ICTE18C, 1N6373 thru 1N6386
Vishay General Semiconductor
50
10
8.0
Uni-Directional Only
TA = 25 °C
7.0
6.0
5.0
4.0
3.0
L = 0.375" (9.5 mm)
Lead Lengths
2.0
1.0
0
1
28
6
8
10 12 14 16 18 20 22 24 26
VC - Clamping Voltage (V)
0
25
50
75
100 125 150
175
200
TL - Lead Temperature (°C)
Figure 7. Typical Characteristics Clamping Voltage
Figure 8. Power Derating Curve
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style 1.5KE
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
MIN.
0.042 (1.07)
0.038 (0.96)
DIA.
www.vishay.com
4
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88356
Revision: 21-Oct-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
1N6374 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| 1N6374-E3/100 | VISHAY | DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Suppressor | 获取价格 |
|
| 1N6374-E3/4 | VISHAY | DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, 1.5KE, 2 PIN, Transient Suppressor | 获取价格 |
|
| 1N6374-E3/51 | VISHAY | TVS DIODE 8V 11.5V 1.5KE | 获取价格 |
|
| 1N6374-E3/53 | VISHAY | DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Suppressor | 获取价格 |
|
| 1N6374-E3/54 | VISHAY | TVS DIODE 8V 11.5V 1.5KE | 获取价格 |
|
| 1N6374-E3/58 | VISHAY | DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Suppressor | 获取价格 |
|
| 1N6374-E3/60 | VISHAY | DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Suppressor | 获取价格 |
|
| 1N6374-E3/71 | VISHAY | DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Suppressor | 获取价格 |
|
| 1N6374-E3/73 | VISHAY | TVS DIODE 8V 11.5V 1.5KE | 获取价格 |
|
| 1N6374-E3/91 | VISHAY | DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Suppressor | 获取价格 |
|
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