BZT52B3V0-V-G
更新时间：2025-11-05 17:57:47
品牌：VISHAY
描述：DIODE 3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, GREEN PACKAGE-2, Voltage Regulator Diode
概述
规格参数
数据手册BZT52B3V0-V-G 概述
DIODE 3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, GREEN PACKAGE-2, Voltage Regulator Diode 稳压二极管
BZT52B3V0-V-G 规格参数
| 是否无铅： | 不含铅 | 是否Rohs认证： | 符合 |
| 生命周期： | Obsolete | 包装说明： | R-PDSO-G2 |
| 针数： | 2 | Reach Compliance Code： | unknown |
| ECCN代码： | EAR99 | HTS代码： | 8541.10.00.50 |
| 风险等级： | 5.63 | 配置： | SINGLE |
| 二极管元件材料： | SILICON | 二极管类型： | ZENER DIODE |
| JESD-30 代码： | R-PDSO-G2 | JESD-609代码： | e3 |
| 湿度敏感等级： | 1 | 元件数量： | 1 |
| 端子数量： | 2 | 最高工作温度： | 150 °C |
| 封装主体材料： | PLASTIC/EPOXY | 封装形状： | RECTANGULAR |
| 封装形式： | SMALL OUTLINE | 峰值回流温度（摄氏度）： | 260 |
| 极性： | UNIDIRECTIONAL | 最大功率耗散： | 0.5 W |
| 认证状态： | Not Qualified | 标称参考电压： | 3 V |
| 表面贴装： | YES | 技术： | ZENER |
| 端子面层： | MATTE TIN | 端子形式： | GULL WING |
| 端子位置： | DUAL | 处于峰值回流温度下的最长时间： | 40 |
| 最大电压容差： | 2% | 工作测试电流： | 5 mA |
| Base Number Matches： | 1 |
BZT52B3V0-V-G 数据手册
通过下载BZT52B3V0-V-G数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载BZT52-V-G-Series
Vishay Semiconductors
Small Signal Zener Diodes
Features
• Silicon planar power zener diodes
• These diodes are also available in other
case styles and other configurations
including: the SOT-23 case with type
designation BZX84 series, the dual zener
diode common anode configuration in the
SOT-23 case with type designation AZ23
series and the dual zener diode common
cathode configuration in the SOT-23 case with
type designation DZ23 series.
17431
• The zener voltages are graded according to the
international E 24 standard.
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Mechanical Data
Case: SOD-123
Weight: approx. 9.4 mg
Packaging codes/options:
18/10 k per 13 " reel (8 mm tape), 10 k/box
08/3 k per 7 " reel (8 mm tape), 15 k/box
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
Value
Unit
Zener current see table
" Characteristics "
500 2)
410 1)
Ptot
Ptot
Power dissipation
Power dissipation
mW
mW
1) Diode on ceramic substrate 0.7 mm; 2.5 mm2 pad areas
2) Diode on ceramic substrate 0.7 mm; 5 mm2 pad areas
Thermal Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
RthJA
Value
300 1)
Unit
Thermal resistance junction to
ambient air
°C/W
TJ
Junction temperature
150
°C
°C
TS
Storage temperature range
- 65 to + 150
1) Valid provided that electrodes are kept at ambient temperature
** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number 83340
Rev. 1.1, 26-Aug-10
www.vishay.com
1
BZT52-V-G-Series
Vishay Semiconductors
Electrical Characteristics
Zener voltage
Test
current
Temp.
coefficient
Reverse Admissible Zener
voltage
Dynamic resistance
range1)
current4)
IZ at IZ at
Tamb Tamb
VR at IR
VZ at IZT1
Marking
rzj at IZT1
rzj at IZT2
IZT1
mA
at IZT1
=
=
=
Part number
code
100 nA
45 °C
25 °C
αVZ
(10-4/°C)
V
Ω
V
mA
min.
2.2
2.5
2.8
3.1
3.4
3.7
4
max.
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5
BZT52C2V4-V-G
BZT52C2V7-V-G
BZT52C3V0-V-G
BZT52C3V3-V-G
BZT52C3V6-V-G
BZT52C3V9-V-G
BZT52C4V3-V-G
BZT52C4V7-V-G
BZT52C5V1-V-G
BZT52C5V6-V-G
BZT52C6V2-V-G
BZT52C6V8-V-G
BZT52C7V5-V-G
BZT52C8V2-V-G
BZT52C9V1-V-G
BZT52C10-V-G
BZT52C11-V-G
BZT52C12-V-G
BZT52C13-V-G
BZT52C15-V-G
BZT52C16-V-G
BZT52C18-V-G
BZT52C20-V-G
BZT52C22-V-G
BZT52C24-V-G
BZT52C27-V-G
BZT52C30-V-G
BZT52C33-V-G
BZT52C36-V-G
BZT52C39-V-G
BZT52C43-V-G
BZT52C47-V-G
BZT52C51-V-G
BZT52C56-V-G
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Y8
Y9
YA
YB
YC
YD
YE
YF
YG
YH
YI
85
600
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
- 9 to - 4
- 9 to - 4
-
-
-
113
98
92
85
77
71
64
56
50
45
41
37
34
30
28
25
23
21
19
17
15
14
13
11
10
9
-
134
118
109
100
92
84
76
67
59
54
49
44
40
36
33
30
28
25
23
20
18
17
16
13
12
10
9
75 (< 83)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
70 (< 78)
30 (< 60)
10 (< 40)
4.8 (< 10)
4.5 (< 8)
4 (< 7)
< 500
< 500
< 500
< 500
< 500
< 500
< 500
< 480
< 400
< 200
< 150
< 50
- 9 to - 3
-
- 8 to - 3
-
- 8 to - 3
-
- 7 to - 3
-
- 6 to - 1
-
4.4
4.8
5.2
5.8
6.4
7
- 5 to + 2
-
5.4
6
- 3 to + 4
> 0.8
> 1
> 2
> 3
> 5
> 6
> 7
> 7.5
> 8.5
> 9
> 10
> 11
> 12
> 14
> 15
> 17
> 18
> 20
> 22.5
> 25
> 27
> 29
> 32
> 35
> 38
-
- 2 to + 6
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
- 1 to + 7
+ 2 to + 7
+ 3 to + 7
+ 4 to + 7
+ 5 to + 8
+ 5 to + 8
+ 5 to + 9
+ 6 to + 9
+ 7 to + 9
+ 7 to + 9
+ 8 to + 9.5
+ 8 to + 9.5
+ 8 to + 10
+ 8 to + 10
+ 8 to + 10
+ 8 to + 10
+ 8 to + 10
+ 8 to + 10
+ 8 to + 10
+ 10 to + 12
+ 10 to + 12
+ 10 to + 12
+ 10 to + 12
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
4.5 (< 7)
4.8 (< 10)
5.2 (< 15)
6 (< 20)
< 50
< 50
< 70
< 70
7 (< 20)
< 90
YK
YL
YM
YN
YO
YP
YR
YS
YT
YU
YW
YX
YY
YZ
Z1
9 (< 25)
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 250
< 250
< 250
< 250
< 300
< 700
< 750
< 750
11 (< 30)
13 (< 40)
18 (< 50)
20 (< 50)
25 (< 55)
28 (< 80)
30 (< 80)
35 (< 80)
40 (< 80)
40 (< 90)
50 (< 90)
60 (< 100)
70 (< 100)
70 (< 100)
31
35
8
34
38
8
9
37
41
7
8
40
46
6
7
44
50
5
6
48
54
5
6
< 135 2)
< 150 2)
< 200 2)
< 250 2)
< 1000 3)
< 1000 3)
< 1000 3)
< 1500 3)
typ. + 10 2)
typ. + 10 2)
typ. + 10 2)
typ. + 10 2)
Z2
52
60
-
-
BZT52C62-V-G
BZT52C68-V-G
BZT52C75-V-G
Z3
Z4
Z5
58
64
70
66
72
79
2.5
2.5
2.5
-
-
-
-
-
-
-
-
-
IZT1 = 5 mA, IZT2 = 1 mA
1) Measured with pulses Tp = 5 ms
2) = IZT1 = 2.5 mA
3) = IZT2 = 0.5 mA
4) Valid provided that electrodes are kept at ambient temperature
www.vishay.com
2
Document Number 83340
Rev. 1.1, 26-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
BZT52-V-G-Series
Vishay Semiconductors
Electrical Characteristics
Zener voltage