S1K-E3/5AT

更新时间:2025-07-03 20:24:56
品牌:VISHAY
描述:DIODE GEN PURP 800V 1A DO214AC

S1K-E3/5AT 概述

DIODE GEN PURP 800V 1A DO214AC 信号二极管

S1K-E3/5AT 规格参数

是否无铅: 不含铅生命周期:Active
零件包装代码:DO-214AC包装说明:R-PDSO-C2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.38Samacsys Description:Vishay S1K-E3/5AT, SMT Diode, 800V 1A, 1.8μs, 2-Pin DO-214AC
其他特性:LOW LEAKAGE CURRENT配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.1 VJEDEC-95代码:DO-214AC
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:30 A
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:800 V最大反向恢复时间:1.8 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:30

S1K-E3/5AT 数据手册

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S1A, S1B, S1D, S1G, S1J, S1K, S1M  
www.vishay.com  
Vishay General Semiconductor  
Surface-Mount Glass Passivated Rectifier  
FEATURES  
Available  
• Low profile package  
• Ideal for automated placement  
• Glass passivated pellet chip junction  
• Low forward voltage drop  
• Low leakage current  
• High forward surge capability  
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 260 °C  
SMA (DO-214AC)  
• AEC-Q101 qualified available  
- Automotive ordering code: base P/NHE3 or P/NHM3  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
Cathode  
Anode  
ADDITIONAL RESOURCES  
TYPICAL APPLICATIONS  
For use in general purpose rectification of power supplies,  
inverters, converters and freewheeling diodes for consumer,  
automotive, and telecommunication.  
3
D
3
D
3D Models  
MECHANICAL DATA  
PRIMARY CHARACTERISTICS  
Case: SMA (DO-214AC)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Base P/N-M3 - halogen-free, RoHS-compliant, commercial  
grade  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
Base P/NHM3_X - halogen-free, RoHS-compliant and  
AEC-Q101 qualified  
IF(AV)  
1.0 A  
50 V, 100 V, 200 V, 400 V, 600 V,  
800 V, 1000 V  
VRRM  
IFSM  
40 A, 30 A  
5 mJ  
EAS  
IR  
VF  
1.0 μA, 5.0 μA  
1.1 V  
(“_X” denotes revision code e.g. A, B,.....)  
TJ max.  
150 °C  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2  
whisker test  
Package  
SMA (DO-214AC)  
Single  
Circuit configuration  
Polarity: color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL S1A  
S1B  
SB  
S1D  
SD  
S1G  
SG  
S1J  
SJ  
S1K  
SK  
S1M UNIT  
Device marking code  
SA  
SM  
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
1.0  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
A
Maximum DC blocking voltage  
Maximum average forward rectified current (fig. 1)  
100  
1000  
IF(AV)  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
40  
30  
A
Non-repetitive peak reverse avalanche energy  
at 25 °C, IAS = 1 A, L = 10 mH  
EAS  
5
mJ  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
-55 to +150  
Revision: 21-Feb-2020  
Document Number: 88711  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
S1A, S1B, S1D, S1G, S1J, S1K, S1M  
www.vishay.com  
Vishay General Semiconductor  
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
SYMBOL  
S1A  
S1B  
S1D  
S1G  
S1J  
S1K  
S1M  
UNIT  
Maximum instantaneous  
forward voltage  
1.0 A  
VF  
1.1  
V
TA = 25 °C  
1.0  
5.0  
Maximum DC reverse current  
at rated DC blocking voltage  
IR  
μA  
TA = 125 °C  
50  
1.8  
12  
IF = 0.5 A, IR = 1.0 A,  
Irr = 0.25 A  
Typical reverse recovery time  
Typical junction capacitance  
trr  
μs  
4.0 V, 1 MHz  
CJ  
pF  
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
S1A  
S1B  
S1D  
75  
S1G  
S1J  
S1K  
S1M  
UNIT  
RθJA  
85  
30  
Typical thermal resistance (1)  
°C/W  
RθJL  
27  
Note  
(1)  
Thermal resistance from junction to ambient and from junction to lead mounted on PCB with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas  
ORDERING INFORMATION (Example)  
PREFERRED P/N  
UNIT WEIGHT (g)  
PREFERRED PACKAGE CODE  
BASE QUANTITY  
1800  
DELIVERY MODE  
S1J-E3/61T  
0.064  
61T  
5AT  
H
7" diameter plastic tape and reel  
13" diameter plastic tape and reel  
7" diameter plastic tape and reel  
13" diameter plastic tape and reel  
7" diameter plastic tape and reel  
13" diameter plastic tape and reel  
7" diameter plastic tape and reel  
13" diameter plastic tape and reel  
S1J-E3/5AT  
0.064  
7500  
S1JHE3_A/H (1)  
S1JHE3_A/I (1)  
S1J-M3/61T  
0.064  
1800  
0.064  
I
7500  
0.064  
61T  
5AT  
H
1800  
S1J-M3/5AT  
0.064  
7500  
S1JHM3_A/H (1)  
S1JHM3_A/I (1)  
0.064  
1800  
0.064  
I
7500  
Note  
(1)  
AEC-Q101 qualified  
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
100  
10  
0
TL = 110 °C  
8.3 ms Single Half Sine-Wave  
Resistive or Inductive Load  
S1A thru S1J  
S1A thru S1J  
S1K, S1M  
S1K, S1M  
0.2" x 0.2" (5.0 mm x 5.0 mm)  
Thick Copper Pad Areas  
1
10  
100  
0
20  
40  
60  
80  
100  
120 140  
160  
Lead Temperature (°C)  
Number of Cycles at 60 Hz  
Fig. 1 - Forward Current Derating Curve  
Revision: 21-Feb-2020  
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current  
Document Number: 88711  
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
S1A, S1B, S1D, S1G, S1J, S1K, S1M  
www.vishay.com  
Vishay General Semiconductor  
100  
10  
100  
TJ = 25 °C  
f = 1.0 MHz  
Vsig = 50 mVp-p  
Pulse Width = 300 μs 1% Duty Cycle  
1
10  
TJ = 25 °C  
TJ = -40 °C  
0.1  
0.01  
1
0.01  
0.4  
0.8  
1.2  
1.6  
0.1  
1
10  
100  
Reverse Voltage (V)  
Instantaneous Forward Voltage (V)  
Fig. 3 - Typical Instantaneous Forward Characteristics  
Fig. 5 - Typical Junction Capacitance  
1000  
10  
TJ = 150 °C  
1
S1K, S1M  
100  
10  
TJ = 75 °C  
0.1  
TJ = 25 °C  
S1A thru S1J  
0.01  
Units Mounted on  
0.20" x 0.20" (5.0 mm x 5.0 mm)  
x 0.5 Mil. Inches (0.013 mm)  
Thick Copper Land Areas  
TJ = -40 °C  
1
0.01  
0.001  
0.1  
1
10  
100  
0
20  
40  
60  
80  
100  
t - Pulse Duration (s)  
Percent of Rated Peak Reverse Voltage (%)  
Fig. 4 - Typical Reverse Leakage Characteristics  
Fig. 6 - Typical Transient Thermal Impedance  
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)  
SMA (DO-214AC)  
Cathode Band  
Mounting Pad Layout  
0.074 (1.88)  
MAX.  
0.066 (1.68)  
MIN.  
0.110 (2.79)  
0.100 (2.54)  
0.065 (1.65)  
0.049 (1.25)  
0.177 (4.50)  
0.157 (3.99)  
0.060 (1.52)  
MIN.  
0.012 (0.305)  
0.006 (0.152)  
0.208 (5.28)  
REF.  
0.090 (2.29)  
0.078 (1.98)  
0.060 (1.52)  
0.030 (0.76)  
0.008 (0.203)  
0 (0)  
0.208 (5.28)  
0.194 (4.93)  
Revision: 21-Feb-2020  
Document Number: 88711  
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Legal Disclaimer Notice  
www.vishay.com  
Vishay  
Disclaimer  
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
disclosure relating to any product.  
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical  
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements  
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product  
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in  
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating  
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.  
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited  
to the warranty expressed therein.  
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and  
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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  
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contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.  
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any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.  
© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED  
Revision: 09-Jul-2021  
Document Number: 91000  
1

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