概述
规格参数
数据手册SI7462DP 概述
N-Channel 200-V (D-S) MOSFET N沟道200 -V （D -S ）的MOSFET 功率场效应晶体管
SI7462DP 规格参数
| 是否无铅： | 含铅 | 是否Rohs认证： | 不符合 |
| 生命周期： | Obsolete | 零件包装代码： | SOT |
| 包装说明： | SMALL OUTLINE, R-XDSO-C5 | 针数： | 8 |
| Reach Compliance Code： | unknown | ECCN代码： | EAR99 |
| 风险等级： | 5.89 | 雪崩能效等级（Eas）： | 1.8 mJ |
| 外壳连接： | DRAIN | 配置： | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压： | 200 V | 最大漏极电流 (ID)： | 2.6 A |
| 最大漏源导通电阻： | 0.13 Ω | FET 技术： | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码： | R-XDSO-C5 | JESD-609代码： | e0 |
| 元件数量： | 1 | 端子数量： | 5 |
| 工作模式： | ENHANCEMENT MODE | 最高工作温度： | 150 °C |
| 封装主体材料： | UNSPECIFIED | 封装形状： | RECTANGULAR |
| 封装形式： | SMALL OUTLINE | 峰值回流温度（摄氏度）： | 240 |
| 极性/信道类型： | N-CHANNEL | 最大脉冲漏极电流 (IDM)： | 12 A |
| 认证状态： | Not Qualified | 表面贴装： | YES |
| 端子面层： | TIN LEAD | 端子形式： | C BEND |
| 端子位置： | DUAL | 处于峰值回流温度下的最长时间： | 30 |
| 晶体管应用： | SWITCHING | 晶体管元件材料： | SILICON |
SI7462DP 数据手册
通过下载SI7462DP数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载SPICE Device Model Si7462DP
Vishay Siliconix
N-Channel 200-V (D-S) MOSFET
CHARACTERISTICS
• N-Channel Vertical DMOS
• Macro Model (Subcircuit Model)
• Level 3 MOS
• Apply for both Linear and Switching Application
• Accurate over the −55 to 125°C Temperature Range
• Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
DESCRIPTION
The attached spice model describes the typical electrical
characteristics of the n-channel vertical DMOS. The subcircuit
model is extracted and optimized over the −55 to 125°C
temperature ranges under the pulsed 0-V to 10-V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
A novel gate-to-drain feedback capacitance network is used to model
the gate charge characteristics while avoiding convergence difficulties
of the switched Cgd model. All model parameter values are optimized
to provide a best fit to the measured electrical data and are not
intended as an exact physical interpretation of the device.
SUBCIRCUIT MODEL SCHEMATIC
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
www.vishay.com
Document Number: 72203
S-60245Rev. B, 20-Feb-06
1
SPICE Device Model Si7462DP
Vishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Simulated
Data
Measured
Data
Parameter
Symbol
Test Condition
Unit
Static
Gate Threshold Voltage
On-State Drain Currenta
VGS(th)
ID(on)
1.9
42
V
A
V
DS = VGS, ID = 250 µA
VDS ≥ 5 V, VGS = 10 V
VGS = 10 V, ID = 4.1 A
0.111
0.125
0.83
0.110
0.120
0.80
Drain-Source On-State Resistancea
rDS(on)
VSD
Ω
V
GS = 6 V, ID = 3.9 A
Forward Voltagea
IS = 4 A, VGS = 0 V
V
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Qg
Qgs
Qgd
td(on)
tr
21
4.5
6.5
9
20
4.5
6.5
15
15
40
20
70
V
DS = 100 V, VGS = 10 V, ID = 4.1 A
nC
ns
16
22
19
60
V
DD = 100 V, RL = 100 Ω
I
D ≅ 1 A, VGEN = 10 V, RG = 6 Ω
Turn-Off Delay Time
Fall Time
td(off)
tf
Source-Drain Reverse Recovery Time
trr
IF = 4 A, di/dt = 100 A/µs
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com
Document Number: 72203
S-60245Rev. B, 20-Feb-06
2
SPICE Device Model Si7462DP
Vishay Siliconix
COMPARISON OF MODEL WITH MEASURED DATA (TJ=25°C UNLESS OTHERWISE NOTED)
www.vishay.com
Document Number: 72203
S-60245Rev. B, 20-Feb-06
3
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
SI7462DP 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| SI7462DP-E3 | VISHAY | TRANSISTOR 2.6 A, 200 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET General Purpose Power | 获取价格 |
|
| SI7462DP-T1-GE3 | VISHAY | Trans MOSFET N-CH 200V 2.6A 8-Pin PowerPAK SO T/R | 获取价格 |
|
| SI7463DP | FAIRCHILD | P-Channel 40-V (D-S) MOSFET | 获取价格 |
|
| SI7463DP | VISHAY | P-Channel 40-V (D-S) MOSFET | 获取价格 |
|
| SI7463DP-T1-E3 | FAIRCHILD | P-Channel 40-V (D-S) MOSFET | 获取价格 |
|
| SI7463DP-T1-E3 | VISHAY | TRANSISTOR 11 A, 40 V, 0.0092 ohm, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8, FET General Purpose Power | 获取价格 |
|
| SI7463DP-T1-GE3 | VISHAY | TRANSISTOR 11 A, 40 V, 0.0092 ohm, P-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8, FET General Purpose Power | 获取价格 |
|
| SI7464DP | VISHAY | N-Channel 6-V (D-S) Fast Switching MOSFET | 获取价格 |
|
| SI7464DP-E3 | VISHAY | TRANSISTOR 1.8 A, 200 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET General Purpose Power | 获取价格 |
|
| SI7464DP-T1-GE3 | VISHAY | N-CH 200-V (D-S) FAST SWITCHING MOSFET - Tape and Reel | 获取价格 |
|
SI7462DP 相关文章
CTS EMI/RFI 滤波器和电容器产品选型手册（英文版）
- 2024-09-18
- 6
CTS Controls 产品线手册(英文版)
- 2024-09-18
- 9
CTS先进材料和解决方案—产品手册（英文版）
- 2024-09-18
- 9
松下(Panasonic)机器用传感器[产品选型手册(2024)
- 2024-09-14
- 22
