SI7810DN-T1
更新时间：2025-04-20 15:08:26
品牌：VISHAY
描述：Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
概述
规格参数
数据手册SI7810DN-T1 概述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET 功率场效应晶体管
SI7810DN-T1 规格参数
| 是否Rohs认证： | 不符合 | 生命周期： | Obsolete |
| 包装说明： | , | Reach Compliance Code： | compliant |
| ECCN代码： | EAR99 | 风险等级： | 5.81 |
| 配置： | Single | 最大漏极电流 (Abs) (ID)： | 2.8 A |
| FET 技术： | METAL-OXIDE SEMICONDUCTOR | JESD-609代码： | e0 |
| 工作模式： | ENHANCEMENT MODE | 最高工作温度： | 150 °C |
| 极性/信道类型： | N-CHANNEL | 最大功率耗散 (Abs)： | 1.5 W |
| 子类别： | FET General Purpose Power | 表面贴装： | YES |
| 端子面层： | Tin/Lead (Sn/Pb) | Base Number Matches： | 1 |
SI7810DN-T1 数据手册
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PDF下载Si7810DN
Vishay Siliconix
N-Channel 100-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
•
•
TrenchFET® Power MOSFET
New Low Thermal Resistance
VDS (V)
rDS(on) (Ω)
ID (A)
5.4
Pb-free
Available
0.062 @ VGS = 10 V
0.084 @ VGS = 6 V
PowerPAK 1212-8 Package with Low
1.07-mm Profile
100
RoHS*
4.6
COMPLIANT
•
PWM Optimized
APPLICATIONS
•
•
Primary Side Switch
In-Rush Current Limiter
PowerPAK 1212-8
D
S
3.30 mm
3.30 mm
1
S
2
S
3
G
4
D
G
8
D
7
D
6
D
5
S
Bottom View
N-Channel MOSFET
Ordering Information: Si7810DN-T1
Si7810DN–T1–E3 (Lead (Pb)–free)
ABSOLUTE MAXIMUM RATINGS T = 25°C, unless otherwise noted
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
100
20
V
A
VGS
TA = 25°C
A = 70°C
5.4
4.3
3.4
2.8
Continuous Drain Current (TJ = 150°C)a
ID
T
IDM
IS
20
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Single Avalanche Current
3.2
1.3
A
IAS
EAS
19
18
L = 0.1 mH
Single Avalanche Energy (Duty Cycle 1 %)
mJ
W
TA = 25°C
A = 70°C
3.8
2.0
1.5
0.8
Maximum Power Dissipationa
PD
T
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b,c
TJ, Tstg
–55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
26
Maximum
Unit
t ≤ 10 sec
33
81
Maximum Junction-to-Ambienta
RthJA
Steady State
Steady State
65
°C/W
Maximum Junction-to-Case
Notes
a. Surface Mounted on 1“ x 1“ FR4 Board.
RthJC
1.9
2.4
b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is
not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 70689
S-51210–Rev. B, 27-Jun-05
www.vishay.com
1
Si7810DN
Vishay Siliconix
SPECIFICATIONS T = 25°C, unless otherwise noted
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
VDS = VGS, ID = 250 µA
2
4.5
100
1
V
VDS = 0 V, VGS
= 20 V
nA
VDS = 100 V, VGS = 0 V
DS = 100 V, VGS = 0 V, TJ = 55°C
VDS ≥ 5 V, VGS = 10 V
IDSS
ID(on)
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
V
5
20
VGS = 10 V, ID = 5.4 A
0.052
0.070
12
0.062
0.084
Drain-Source On-State Resistancea
rDS(on)
Ω
V
GS = 6 V, ID = 4.6 A
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
gfs
VDS = 15 V, ID = 5.4 A
IS = 3.2 A, VGS = 0 V
S
V
VSD
0.78
1.2
17
Total Gate Charge
Qg
Qgs
Qgd
td(on)
tr
13.5
3
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
V
DS = 50 V, VGS = 10 V, ID = 5.4 A
nC
ns
4.6
10
15
20
15
45
15
25
30
25
90
VDD = 50 V, RL = 50 Ω
ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω
Turn-Off DelayTime
Fall Time
td(off)
tf
Source-Drain Reverse Recovery Time
trr
IF = 3.2 A, di/dt = 100 A/µs
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS T = 25°C, unless otherwise noted
A
20
16
12
8
20
16
12
8
6 V
V
GS
= 10 thru 7 V
T
= 125˚C
C
5 V
4 V
4
4
25˚C
3
–55˚C
6
0
0
0
1
2
3
4
5
0
1
2
4
5
7
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
www.vishay.com
2
Document Number: 70689
S-51210–Rev. B, 27-Jun-05
Si7810DN
Vishay Siliconix
TYPICAL CHARACTERISTICS T = 25°C, unless otherwise noted
A
5000
4000
3000
2000
1000
0
0.20
0.16
0.12
0.08
0.04
0.00
C
iss
V
GS
= 6 V
V
GS
= 10 V
C
oss
C
rss
0
4
8
12
16
20
0
4
8
12
16
20
V
DS
– Drain-to-Source Voltage (V)
I
D
– Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
5
4
3
2
1
0
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 10 V
V
D
= 4.5 V
DS
= 11
GS
I = 11 A
I
A
0
7
14
21
28
35
–50 –25
0
25
50
75
100 125 150
Q
– Total Gate Charge (nC)
T – Junction Temperature (˚C)
J
g
Gate Charge
On-Resistance vs. Junction Temperature
0.16
0.12
0.08
0.04
0.00
30
10
T
= 150˚C
J
I
D
= 5.4 A
T
= 25˚C
J
1
0.0
0
2
4
6
8
10
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 70689
S-51210–Rev. B, 27-Jun-05
www.vishay.com
3
Si7810DN
Vishay Siliconix
TYPICAL CHARACTERISTICS T = 25°C, unless otherwise noted
A
0.6
50
40
30
0.4
I
D
= 250 µA
0.2
–0.0
–0.2
–0.4
–0.6
–0.8
–1.0
–1.2
20
10
0
0.01
–50 –25
0
25
50
75
100 125 150
0.1
1
10
100
600
Time (sec)
T
– Temperature (˚C)
J
Threshold Voltage
Single Pulse Power, Juncion-To-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 65˚C/W
(t)
thJA
3. T – T = P
Z
JM DM thJA
A
Single Pulse
4. Surface Mounted
0.01
–4
–3
–2
–1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.05
0.02
0.01
–4
–3
–2
–1
10
10
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
10
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?70689.
www.vishay.com
4
Document Number: 70689
S-51210–Rev. B, 27-Jun-05
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
SI7810DN-T1 CAD模型
原理图符号
PCB 封装图
SI7810DN-T1 相关器件
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| SI7810DN-T1-GE3 | VISHAY | Trans MOSFET N-CH 100V 3.4A 8-Pin PowerPAK 1212-8 T/R | 获取价格 |
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| SI7812DN-T1-GE3 | VISHAY | N-Channel 75-V (D-S) MOSFET | 获取价格 |
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| SI7815 | SECOS | 3-Terminal Positive Voltage Regulator | 获取价格 |
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