概述
数据手册SI7810DN 概述
N-Channel 100-V (D-S) MOSFET N沟道100 -V （D -S ）的MOSFET
SI7810DN 数据手册
通过下载SI7810DN数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载Si7810DN
Vishay Siliconix
New Product
N-Channel 100-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
VDS (V)
rDS(on) (W)
ID (A)
D New Low Thermal Resistance
D PowerPAKt 1212-8 Package with Low
0.062 @ V = 10 V
5.4
4.6
GS
100
1.07-mm Profile
0.084 @ V = 6 V
GS
D PWM Optimized
APPLICATIONS
D Primary Side Switch
D In-Rush Current Limiter
PowerPAKt 1212-8
D
S
3.30 mm
3.30 mm
1
S
2
S
3
G
4
G
D
8
D
7
D
S
6
D
5
N-Channel MOSFET
Bottom View
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
100
DS
GS
V
V
"20
T
= 25_C
= 70_C
5.4
4.3
3.4
2.8
A
a
Continuous Drain Current (T = 150_C)
I
J
D
T
A
A
Pulsed Drain Current
I
20
DM
a
Continuous Source Current (Diode Conduction)
Single Avalanche Current
I
3.2
1.3
S
I
AS
19
18
L = 0.1 mH
Single Avalanche Energy
E
AS
mJ
T
= 25_C
= 70_C
3.8
2.0
1.5
0.8
A
a
Maximum Power Dissipation
P
W
D
T
A
Operating Junction and Storage Temperature Range
T , T
J
–55 to 150
_C
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
26
65
33
81
a
Maximum Junction-to-Ambient
R
thJA
R
thJC
_C/W
Maximum Junction-to-Case (Drain)
1.9
2.4
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 70689
S-04559—Rev. A, 27-Aug-01
www.vishay.com
1
Si7810DN
New Product
Vishay Siliconix
MOSFET SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 mA
2
V
GS(th)
DS
GS
D
V
DS
= 0 V, V = "20 V
GS
I
"100
nA
GSS
V
= 80 V, V = 0 V
1
5
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= 80 V, V = 0 V, T = 55_C
GS
J
a
On-State Drain Current
I
20
A
V
DS
w 5 V, V = 10 V
GS
D(on)
0.052
0.062
0.084
V
= 10 V, I = 5.4 A
D
GS
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= 6 V, I = 4.6 A
0.070
12
GS
D
a
Forward Transconductance
g
fs
V
= 15 V, I = 5.4 A
S
V
DS
D
a
Diode Forward Voltage
V
SD
I
= 3.2 A, V = 0 V
0.78
1.2
17
S
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
13.5
3
g
Q
Q
V
= 50 V, V = 10 V, I = 5.4 A
nC
ns
gs
gd
DS
GS
D
4.6
10
15
20
15
45
t
15
25
30
25
90
d(on)
t
r
V
= 50 V, R = 50 W
L
= 10 V, R = 6 W
GEN G
DD
I
^ 1 A, V
D
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I = 3.2 A, di/dt = 100 A/ms
F
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
20
20
16
12
8
6 V
V
GS
= 10 thru 7 V
16
12
8
T
= 125_C
C
5 V
4 V
4
4
25_C
–55_C
0
0
0
1
2
3
4
5
0
1
2
3
4
5
6
7
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Document Number: 70689
www.vishay.com
S-04559—Rev. A, 27-Aug-01
2
Si7810DN
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
1000
800
600
400
200
0
0.20
0.16
0.12
C
iss
V
GS
= 6 V
0.08
0.04
0.00
V
GS
= 10 V
C
oss
C
rss
0
4
8
12
16
20
0
20
40
60
80
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
= 50 V
V
GS
= 10 V
DS
I
D
= 5.4
A
I = 5.4 A
D
6
4
2
0
0
2
4
g
6
8
10
12
14
–50 –25
0
25
50
75
100 125 150
Q
– Total Gate Charge (nC)
T – Junction Temperature (_C)
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.16
0.12
0.08
0.04
0.00
20
T
= 150_C
J
10
I
D
= 5.4 A
T
= 25_C
J
1
0.0
0
2
4
6
8
10
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Document Number: 70689
www.vishay.com
S-04559—Rev. A, 27-Aug-01
3
Si7810DN
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power, Juncion-To-Ambient
0.6
50
40
30
0.4
I
D
= 250 mA
0.2
–0.0
–0.2
–0.4
–0.6
–0.8
–1.0
–1.2
20
10
0
–50 –25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
600
T
– Temperature (_C)
Time (sec)
J
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 65_C/W
thJA
(t)
3. T – T = P Z
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
–4
–3
–2
–1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.05
0.02
0.01
–4
–3
–2
–1
10
10
10
Square Wave Pulse Duration (sec)
10
1
Document Number: 70689
www.vishay.com
S-04559—Rev. A, 27-Aug-01
4
SI7810DN 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| SI7810DN-E3 | VISHAY | TRANSISTOR 3.4 A, 100 V, 0.062 ohm, N-CHANNEL, Si, POWER, MOSFET, 1212-8, POWERPAK-8, FET General Purpose Power | 获取价格 |
|
| SI7810DN-T1 | VISHAY | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | 获取价格 |
|
| SI7810DN-T1-GE3 | VISHAY | Trans MOSFET N-CH 100V 3.4A 8-Pin PowerPAK 1212-8 T/R | 获取价格 |
|
| SI7810DN_06 | VISHAY | N-Channel 100-V (D-S) MOSFET | 获取价格 |
|
| SI7812 | SECOS | 3-Terminal Positive Voltage Regulator | 获取价格 |
|
| SI7812DN | VISHAY | N-Channel 75-V (D-S) MOSFET | 获取价格 |
|
| SI7812DN-T1-E3 | VISHAY | N-Channel 75-V (D-S) MOSFET | 获取价格 |
|
| SI7812DN-T1-GE3 | VISHAY | N-Channel 75-V (D-S) MOSFET | 获取价格 |
|
| SI7815 | SECOS | 3-Terminal Positive Voltage Regulator | 获取价格 |
|
| SI7818 | SECOS | 3-Terminal Positive Voltage Regulator | 获取价格 |
|
SI7810DN 相关文章
三星电子专注提升1b DRAM性能与良率，否认重新设计传闻
- 2025-01-22
- 20
特朗普宣布OpenAI、软银等联手投资5000亿美元建设人工智能基础设施
- 2025-01-22
- 23
思瑞浦新推车规级LIN SBC芯片TPT1028Q，引领汽车电子高效新纪元
- 2025-01-22
- 24
比利时氮化镓制造商BelGaN破产，中国买家积极竞购设备资产
- 2025-01-22
- 22
