首页 > 晶体管 > 功率场效应晶体管 > SI7894ADP

SI7894ADP

更新时间：2025-06-29 10:19:20

品牌：VISHAY

描述：N-Channel 30-V (D-S) MOSFET

PDF下载

中文翻译

免费 PCB/SMT

概述
数据手册

如果您发现信息不准确，欢迎纠错

SI7894ADP 概述

N-Channel 30-V (D-S) MOSFET N通道30 -V （D -S ）的MOSFET

SI7894ADP 数据手册

通过下载SI7894ADP数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

PDF下载

SPICE Device Model Si7894ADP

Vishay Siliconix

N-Channel 30-V (D-S) MOSFET

CHARACTERISTICS

• N-Channel Vertical DMOS

• Macro Model (Subcircuit Model)

• Level 3 MOS

• Apply for both Linear and Switching Application

• Accurate over the −55 to 125°C Temperature Range

• Model the Gate Charge, Transient, and Diode Reverse Recovery

Characteristics

DESCRIPTION

The attached spice model describes the typical electrical

characteristics of the n-channel vertical DMOS. The subcircuit

model is extracted and optimized over the −55 to 125°C

temperature ranges under the pulsed 0-V to 10-V gate drive. The

saturated output impedance is best fit at the gate bias near the

threshold voltage.

A novel gate-to-drain feedback capacitance network is used to model

the gate charge characteristics while avoiding convergence difficulties

of the switched C_gdmodel. All model parameter values are optimized

to provide a best fit to the measured electrical data and are not

intended as an exact physical interpretation of the device.

SUBCIRCUIT MODEL SCHEMATIC

This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate

data sheet of the same number for guaranteed specification limits.

www.vishay.com

Document Number: 73195

S-60244Rev. B, 20-Feb-06

SPICE Device Model Si7894ADP

Vishay Siliconix

SPECIFICATIONS (T_J= 25°C UNLESS OTHERWISE NOTED)

Simulated

Data

Measured

Data

Parameter

Symbol

Test Condition

Unit

Static

Gate Threshold Voltage

On-State Drain Current^a

V_GS(th)

I_D(on)

2.2

1583

0.0029

0.0036

218

_DS= V_GS, I_D= 250 µA

_DS≥ 5 V, V_GS= 10 V

V_GS= 10 V, I_D= 25 A

0.0028

0.0035

110

Drain-Source On-State Resistance^a

r_DS(on)

Ω

_GS= 4.5 V, I_D= 23 A

Forward Transconductance^a

Diode Forward Voltage^a

g_fs

V_DS= 15 V, I_D= 25 A

I_S= 2.9 A, V_GS= 0 V

V_SD

0.76

0.70

Dynamic^b

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Q_g

Q_gs

Q_gd

V_DS= 15 V, V_GS= 4.5 V, I_D= 25 A

11.5

Notes

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.

b. Guaranteed by design, not subject to production testing.

www.vishay.com

Document Number: 73195

S-60244Rev. B, 20-Feb-06

SPICE Device Model Si7894ADP

Vishay Siliconix

COMPARISON OF MODEL WITH MEASURED DATA (T_J=25°C UNLESS OTHERWISE NOTED)

www.vishay.com

Document Number: 73195

S-60244Rev. B, 20-Feb-06

SI7894ADP 相关器件

型号	制造商	描述	价格	文档
SI7894ADP-T1-GE3	VISHAY	TRANSISTOR 17 A, 30 V, 0.0036 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8, FET General Purpose Power	获取价格
SI7894DP	VISHAY	N-Channel 30-V (D-S) MOSFET	获取价格
SI7898DP	VISHAY	N-Channel 150-V (D-S) MOSFET	获取价格
SI7898DP (KI7898DP)	KEXIN	N-Channel MOSFET	获取价格
SI7898DP-E3	VISHAY	TRANSISTOR 3 A, 150 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET General Purpose Power	获取价格
SI7898DP-T1-E3	VISHAY	Trans MOSFET N-CH 150V 3A 8-Pin PowerPAK SO T/R	获取价格
SI7898DP-T1-GE3	VISHAY	Trans MOSFET N-CH 150V 3A 8-Pin PowerPAK SO T/R	获取价格
SI7898DP_06	VISHAY	N-Channel 150-V (D-S) MOSFET	获取价格
SI78XX	SECOS	3-Terminal Positive Voltage Regulator	获取价格
SI7900	VISHAY	Specification Comparison	获取价格