概述
数据手册SI7894ADP 概述
N-Channel 30-V (D-S) MOSFET N通道30 -V （D -S ）的MOSFET
SI7894ADP 数据手册
通过下载SI7894ADP数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载SPICE Device Model Si7894ADP
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
CHARACTERISTICS
• N-Channel Vertical DMOS
• Macro Model (Subcircuit Model)
• Level 3 MOS
• Apply for both Linear and Switching Application
• Accurate over the −55 to 125°C Temperature Range
• Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
DESCRIPTION
The attached spice model describes the typical electrical
characteristics of the n-channel vertical DMOS. The subcircuit
model is extracted and optimized over the −55 to 125°C
temperature ranges under the pulsed 0-V to 10-V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
A novel gate-to-drain feedback capacitance network is used to model
the gate charge characteristics while avoiding convergence difficulties
of the switched Cgd model. All model parameter values are optimized
to provide a best fit to the measured electrical data and are not
intended as an exact physical interpretation of the device.
SUBCIRCUIT MODEL SCHEMATIC
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
www.vishay.com
Document Number: 73195
S-60244Rev. B, 20-Feb-06
1
SPICE Device Model Si7894ADP
Vishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Simulated
Data
Measured
Data
Parameter
Symbol
Test Condition
Unit
Static
Gate Threshold Voltage
On-State Drain Currenta
VGS(th)
ID(on)
2.2
1583
0.0029
0.0036
218
V
A
V
DS = VGS, ID = 250 µA
V
DS ≥ 5 V, VGS = 10 V
VGS = 10 V, ID = 25 A
0.0028
0.0035
110
Drain-Source On-State Resistancea
rDS(on)
Ω
V
GS = 4.5 V, ID = 23 A
Forward Transconductancea
Diode Forward Voltagea
gfs
VDS = 15 V, ID = 25 A
IS = 2.9 A, VGS = 0 V
S
V
VSD
0.76
0.70
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
57
58
VDS = 15 V, VGS = 4.5 V, ID = 25 A
nC
11.5
11.5
11.5
11.5
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com
Document Number: 73195
S-60244Rev. B, 20-Feb-06
2
SPICE Device Model Si7894ADP
Vishay Siliconix
COMPARISON OF MODEL WITH MEASURED DATA (TJ=25°C UNLESS OTHERWISE NOTED)
www.vishay.com
Document Number: 73195
S-60244Rev. B, 20-Feb-06
3
SI7894ADP 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| SI7894ADP-T1-GE3 | VISHAY | TRANSISTOR 17 A, 30 V, 0.0036 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8, FET General Purpose Power | 获取价格 |
|
| SI7894DP | VISHAY | N-Channel 30-V (D-S) MOSFET | 获取价格 |
|
| SI7898DP | VISHAY | N-Channel 150-V (D-S) MOSFET | 获取价格 |
|
| SI7898DP (KI7898DP) | KEXIN | N-Channel MOSFET | 获取价格 |
|
| SI7898DP-E3 | VISHAY | TRANSISTOR 3 A, 150 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET General Purpose Power | 获取价格 |
|
| SI7898DP-T1-E3 | VISHAY | Trans MOSFET N-CH 150V 3A 8-Pin PowerPAK SO T/R | 获取价格 |
|
| SI7898DP-T1-GE3 | VISHAY | Trans MOSFET N-CH 150V 3A 8-Pin PowerPAK SO T/R | 获取价格 |
|
| SI7898DP_06 | VISHAY | N-Channel 150-V (D-S) MOSFET | 获取价格 |
|
| SI78XX | SECOS | 3-Terminal Positive Voltage Regulator | 获取价格 |
|
| SI7900 | VISHAY | Specification Comparison | 获取价格 |
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