概述
数据手册SI7913DN 概述
Dual P-Channel 20-V (D-S) MOSFET 双P通道20 - V（D -S）的MOSFET
SI7913DN 数据手册
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PDF下载Si7913DN
Vishay Siliconix
Dual P-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKr
Package
VDS (V)
rDS(on) (W)
ID (A)
0.037 @ V = −4.5 V
−7.4
−6.5
−5.5
GS
RoHS
COMPLIANT
APPLICATIONS
D Portable
−20
0.048 @ V = −2.5
V
V
GS
0.066 @ V = −1.8
GS
− PA Switch
− Battery Switch
− Load Switch
PowerPAK 1212-8
S
S
S1
3.30 mm
3.30 mm
1
G
G
G1
2
S2
3
G2
4
D1
8
D1
7
D
D
P-Channel MOSFET
D2
6
D2
5
Ordering Information: Si7913DN-T1—E3 (Lead (Pb)-Free)
P-Channel MOSFET
Bottom View
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
−20
DS
V
V
GS
"8
T
= 25_C
= 85_C
−5.0
−3.6
−7.4
−5.3
A
a
Continuous Drain Current (T = 150_C)
I
D
J
T
A
A
Pulsed Drain Current
I
DM
−20
a
continuous Source Current (Diode Conduction)
I
−2.3
2.8
−1.1
1.3
S
T
= 25_C
= 85_C
A
a
Maximum Power Dissipation
P
W
D
T
A
1.5
0.85
Operating Junction and Storage Temperature Range
T , T
−55 to 150
J
stg
_C
b,c
Soldering Recommendations (Peak Temperature)
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
35
75
4
44
94
5
a
Maximum Junction-to-Ambient
R
R
thJA
_C/W
Maximum Junction-to-Case
thJC
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72615
S-51129—Rev. B, 13-Jun-05
www.vishay.com
1
Si7913DN
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = −250 mA
−0.40
−1.0
V
GS(th)
DS
GS
D
I
V
= 0 V, V = "8 V
"100
nA
GSS
DS
GS
V
= −20 V, V = 0 V
−1
−5
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= −20 V, V = 0 V, T = 85_C
GS
J
a
On-State Drain Current
I
V
DS
v −5 V, V = −4.5 V
−20
A
D(on)
GS
V
= −4.5 V, I = −7.4 A
0.029
0.038
0.051
0.037
0.048
0.066
GS
D
a
V
= −2.5 V, I = −6.5 A
Drain-Source On-State Resistance
r
W
GS
D
DS(on)
V
= −1.8 V, I = −1.5 A
GS
D
a
Forward Transconductance
g
20
S
V
V
= −6 V, I = −7.4 A
fs
DS
D
a
Diode Forward Voltage
V
SD
I
S
= −2.3 A, V = 0 V
−0.74
−1.2
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
15.3
2.0
3.9
7
24
g
Q
Q
V
= −10 V, V = −4.5 V, I = −7.4 A
nC
gs
gd
DS
GS
D
R
g
f = 1 MHz
W
t
20
30
110
110
225
50
d(on)
t
r
70
V
= −10 V, R = 10 W
L
GEN g
DD
I
D
^ −1 A, V
= −4.5 V, R = 6 W
Turn-Off Delay Time
Fall Time
t
72
ns
d(off)
t
f
150
25
Source-Drain Reverse Recovery Time
Notes
t
rr
I = −2.3 A, di/dt = 100 A/ms
F
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
20
16
12
8
20
16
12
8
V
GS
= 5 thru 2.5 V
2 V
1.5 V
1 V
T
= 125_C
C
4
4
25_C
−55_C
0
0
0
1
2
3
4
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 72615
S-51129—Rev. B, 13-Jun-05
www.vishay.com
2
Si7913DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
2100
1800
1500
1200
900
600
300
0
0.10
0.08
C
iss
V
GS
= 1.8 V
0.06
0.04
0.02
0.00
V
V
= 2.5 V
= 4.5 V
GS
GS
C
oss
C
rss
0
4
8
12
16
20
0
4
8
12
16
20
I
D
− Drain Current (A)
V
DS
− Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
5
4
3
2
1
0
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 10 V
V
GS
= 4.5 V
DS
I
= 7.4
A
I = 7.4 A
D
0
4
8
12
16
20
−50 −25
0
25
50
75
100 125 150
Q
− Total Gate Charge (nC)
T
− Junction Temperature (_C)
g
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
0.06
0.04
0.02
0.00
20
I
D
= 7.4 A
10
T
= 150_C
J
I
D
= 1.5 A
T
= 25_C
J
1
0.0
0
1
2
3
4
5
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
− Source-to-Drain Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 72615
S-51129—Rev. B, 13-Jun-05
www.vishay.com
3
Si7913DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
0.4
50
40
I
D
= 250 mA
0.3
0.2
30
0.1
20
10
0.0
−0.1
−0.2
0
−50 −25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
100
600
T
− Temperature (_C)
Time (sec)
J
Safe Operating Area, Junction-To-Ambient
100
Limited by r
DS(on)
I
Limited
DM
10
P(t) = 0.001
P(t) = 0.01
1
I
D(on)
Limited
P(t) = 0.1
P(t) = 1
T
= 25_C
A
P(t) = 10
dc
0.1
Single Pulse
BV
DSS
Limited
0.01
0.1
1
10
100
V
DS
− Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 65_C/W
thJA
(t)
3. T − T = P Z
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
−4
−3
−2
−1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 72615
S-51129—Rev. B, 13-Jun-05
www.vishay.com
4
Si7913DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
Single Pulse
0.01
−4
−3
−2
−1
10
10
10
Square Wave Pulse Duration (sec)
10
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?72615.
Document Number: 72615
S-51129—Rev. B, 13-Jun-05
www.vishay.com
5
SI7913DN 相关器件
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