Si7922DN
Vishay Siliconix
New Product
Dual N-Channel 100-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
VDS (V)
rDS(on) (W)
ID (A)
D New Low Thermal Resistance PowerPAKt
Package, 1/3 the Space of An SO-8 While
Thermally Comparable
0.195 @ V = 10 V
GS
2.5
2.3
100
0.230 @ V = 6 V
GS
D PWM Optimized
APPLICATIONS
D DC/DC Primary-Side Switch
D 48-V Battery Monitoring
PowerPAKt 1212-8
D
1
D
2
S1
3.30 mm
3.30 mm
1
G1
2
S2
3
G2
4
G
1
G
2
D1
8
D1
7
D2
S
S
6
1
2
D2
5
N-Channel MOSFET
N-Channel MOSFET
Bottom View
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
100
DS
GS
V
V
"20
T
= 25_C
= 85_C
2.5
1.8
1.8
1.3
A
a
Continuous Drain Current (T = 150__C)
I
J
D
T
A
A
Pulsed Drain Current
I
10
5
DM
Avalanche Current
I
AS
0.1 mH
Single Avalanche Energy
E
1.25
mJ
A
AS
a
Continuous Source Current (Diode Conduction)
I
2.2
2.6
1.4
1.1
1.3
S
T
= 25_C
= 85_C
A
a
Maximum Power Dissipation
P
W
D
T
0.69
A
Operating Junction and Storage Temperature Range
T , T
J
-55 to 150
_C
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
38
77
48
94
a
Maximum Junction-to-Ambient
R
thJA
R
thJC
_C/W
Maximum Junction-to-Case (Drain)
4.3
5.4
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72031
S-21976—Rev. A, 04-Nov-02
www.vishay.com
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