首页 > SI7922DN-E3

SI7922DN-E3

更新时间：2025-07-05 15:08:26
品牌：VISHAY
描述：TRANSISTOR 1.8 A, 100 V, 0.195 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, 1212-8, POWERPAK-8, FET General Purpose Power

PDF下载

中文翻译

免费 PCB/SMT

SI7922DN-E3 概述

TRANSISTOR 1.8 A, 100 V, 0.195 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, 1212-8, POWERPAK-8, FET General Purpose Power 功率场效应晶体管

SI7922DN-E3 规格参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：SMALL OUTLINE, R-XDSO-C6
针数：8Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.17
雪崩能效等级（Eas）：1.25 mJ外壳连接：DRAIN
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压：100 V
最大漏极电流 (Abs) (ID)：1.8 A最大漏极电流 (ID)：1.8 A
最大漏源导通电阻：0.195 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-XDSO-C6JESD-609代码：e3
湿度敏感等级：1元件数量：2
端子数量：6工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：2.6 W最大脉冲漏极电流 (IDM)：10 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Matte Tin (Sn)
端子形式：C BEND端子位置：DUAL
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

SI7922DN-E3 数据手册

通过下载SI7922DN-E3数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

PDF下载
Si7922DN  
Vishay Siliconix  
New Product  
Dual N-Channel 100-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFET  
VDS (V)  
rDS(on) (W)  
ID (A)  
D New Low Thermal Resistance PowerPAKt  
Package, 1/3 the Space of An SO-8 While  
Thermally Comparable  
0.195 @ V = 10 V  
GS  
2.5  
2.3  
100  
0.230 @ V = 6 V  
GS  
D PWM Optimized  
APPLICATIONS  
D DC/DC Primary-Side Switch  
D 48-V Battery Monitoring  
PowerPAKt 1212-8  
D
1
D
2
S1  
3.30 mm  
3.30 mm  
1
G1  
2
S2  
3
G2  
4
G
1
G
2
D1  
8
D1  
7
D2  
S
S
6
1
2
D2  
5
N-Channel MOSFET  
N-Channel MOSFET  
Bottom View  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
100  
DS  
GS  
V
V
"20  
T
= 25_C  
= 85_C  
2.5  
1.8  
1.8  
1.3  
A
a
Continuous Drain Current (T = 150__C)  
I
J
D
T
A
A
Pulsed Drain Current  
I
10  
5
DM  
Avalanche Current  
I
AS  
0.1 mH  
Single Avalanche Energy  
E
1.25  
mJ  
A
AS  
a
Continuous Source Current (Diode Conduction)  
I
2.2  
2.6  
1.4  
1.1  
1.3  
S
T
= 25_C  
= 85_C  
A
a
Maximum Power Dissipation  
P
W
D
T
0.69  
A
Operating Junction and Storage Temperature Range  
T , T  
J
-55 to 150  
_C  
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
38  
77  
48  
94  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJC  
_C/W  
Maximum Junction-to-Case (Drain)  
4.3  
5.4  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 72031  
S-21976—Rev. A, 04-Nov-02  
www.vishay.com  
1
Si7922DN  
New Product  
Vishay Siliconix  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
= V , I = 250 mA  
2
4
"100  
1
V
GS(th)  
DS  
GS D  
V
= 0 V, V = "20 V  
GS  
I
nA  
DS  
GSS  
V
= 80 V, V = 0 V  
GS  
DS  
Zero Gate Voltage Drain Current  
I
mA  
DSS  
V
= 80 V, V = 0 V, T = 85_C  
5
DS  
GS  
J
a
On-State Drain Current  
I
10  
A
V
w 5 V, V = 10 V  
GS  
D(on)  
DS  
0.162  
0.195  
0.230  
V
= 10 V, I = 2.5 A  
D
GS  
a
Drain-Source On-State Resistance  
r
W
DS(on)  
V
= 6 V, I = 2.3 A  
0.190  
5.3  
GS  
D
a
Forward Transconductance  
g
fs  
V
= 10 V, I = 2.5 A  
S
V
DS  
D
a
Diode Forward Voltage  
V
I
S
= 2.2 A, V = 0 V  
0.8  
1.2  
8
SD  
GS  
Dynamicb  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Gate Resistance  
Turn-On Delay Time  
Rise Time  
Q
g
5.2  
1.1  
1.9  
1.7  
7
Q
gs  
Q
gd  
V
= 50 V, V = 10 V, I = 2.5 A  
nC  
DS  
GS  
D
R
G
W
t
t
15  
20  
15  
20  
80  
d(on)  
t
r
11  
8
V
= 50 V, R = 50 W  
L
= 4.5 V, R = 6 W  
GEN G  
DD  
I
D
^ 1 A, V  
Turn-Off Delay Time  
Fall Time  
ns  
d(off)  
t
f
11  
40  
Source-Drain Reverse Recovery Time  
t
rr  
I = 2.2 A, di/dt = 100 A/ms  
F
Notes  
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing.  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
10  
10  
8
V
= 10 thru 6 V  
GS  
8
6
4
2
0
6
5 V  
4
T
C
= 125_C  
2
25_C  
3 V  
4 V  
-55 _C  
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
V
- Drain-to-Source Voltage (V)  
V
- Gate-to-Source Voltage (V)  
GS  
DS  
Document Number: 72031  
S-21976—Rev. A, 04-Nov-02  
www.vishay.com  
2
Si7922DN  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
On-Resistance vs. Drain Current  
Capacitance  
0.5  
320  
280  
240  
200  
160  
120  
80  
0.4  
0.3  
C
iss  
V
= 6 V  
GS  
0.2  
0.1  
0.0  
V
= 10 V  
GS  
C
oss  
40  
C
rss  
0
0
2
4
6
8
10  
0
20  
40  
60  
80  
100  
I
D
- Drain Current (A)  
V
DS  
- Drain-to-Source Voltage (V)  
Gate Charge  
On-Resistance vs. Junction Temperature  
10  
8
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 50 V  
= 2.5 A  
V
= 10 V  
GS  
DS  
I
D
I = 2.5 A  
D
6
4
2
0
0
1
2
3
4
5
6
-50  
-25  
0
25  
50  
75  
100 125 150  
Q
g
- Total Gate Charge (nC)  
T - Junction Temperature (_C)  
J
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
0.5  
10  
0.4  
0.3  
0.2  
0.1  
0.0  
I
= 2.5 A  
D
T = 150_C  
J
T = 25_C  
J
1
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0
2
4
6
8
10  
V
- Source-to-Drain Voltage (V)  
V
- Gate-to-Source Voltage (V)  
GS  
SD  
Document Number: 72031  
S-21976—Rev. A, 04-Nov-02  
www.vishay.com  
3
Si7922DN  
New Product  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Threshold Voltage  
Single Pulse Power  
0.6  
50  
40  
0.4  
0.2  
-0.0  
-0.2  
-0.4  
-0.6  
-0.8  
-1.0  
I
D
= 250 mA  
30  
20  
10  
0
-50  
-25  
0
25  
50  
75  
100 125 150  
0.001  
0.01  
0.1  
10  
100  
600  
1
T
J
- Temperature (_C)  
Time (sec)  
Safe Operating Area, Junction-To-Ambient  
100  
I
DM  
Limited  
r
Limited  
DS(on)  
10  
1
P(t) = 0.0001  
P(t) = 0.001  
P(t) = 0.01  
I
D(on)  
Limited  
0.1  
P(t) = 0.1  
P(t) = 1  
T
= 25_C  
A
Single Pulse  
P(t) = 10  
dc  
0.01  
0.1  
1
10  
100  
BV  
DSS  
Limited  
V
- Drain-to-Source Voltage (V)  
DS  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
0.02  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
2. Per Unit Base = R  
= 77_C/W  
thJA  
(t)  
Z
3. T  
- T = P  
DM thJA  
JM  
A
Single Pulse  
4. Surface Mounted  
0.01  
- 4  
- 3  
- 2  
- 1  
10  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Document Number: 72031  
S-21976—Rev. A, 04-Nov-02  
www.vishay.com  
4
Si7922DN  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Normalized Thermal Transient Impedance, Junction-to-Case  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
- 4  
- 3  
- 2  
- 1  
10  
10  
10  
Square Wave Pulse Duration (sec)  
10  
1
NOTE:  
The minimum creepage between D1 and D2 for this 100-V device is 0.2 mm. Please see PowerPAK 1212-8 outline drawing, document # 71656, for more infor-  
mation.  
Document Number: 72031  
S-21976—Rev. A, 04-Nov-02  
www.vishay.com  
5

SI7922DN-E3 相关器件

型号 制造商 描述 价格 文档
SI7922DN-T1-E3 VISHAY Trans MOSFET N-CH 100V 1.8A 8-Pin PowerPAK 1212 T/R 获取价格
SI7922DN-T1-GE3 VISHAY Trans MOSFET N-CH 100V 1.8A 8-Pin PowerPAK 1212 T/R 获取价格
SI7922DN_06 VISHAY Dual N-Channel 100-V (D-S) MOSFET 获取价格
SI7922DN_07 VISHAY Dual N-Channel 100-V (D-S) MOSFET 获取价格
SI7923DN VISHAY Dual P-Channel 30-V (D-S) MOSFET 获取价格
SI7923DN-T1-E3 VISHAY Dual P-Channel 30-V (D-S) MOSFET 获取价格
SI7923DN-T1-GE3 VISHAY Trans MOSFET P-CH 30V 4.3A 8-Pin PowerPAK 1212 T/R 获取价格
SI7923DN_06 VISHAY Dual P-Channel 30-V (D-S) MOSFET 获取价格
SI7924 SECOS 3-Terminal Negative Voltage Regulator 获取价格
SI7924A SECOS 3-Terminal Negative Voltage Regulator 获取价格

SI7922DN-E3 相关文章

  • 2026 年 ASIC 或逆袭 GPU，定制化算力竞赛进入决胜阶段
    2025-07-08
    4
  • Buck 电路空载电感发热：原因探究与解决方案
    2025-07-08
    10
  • HBM 技术爆炸式增长，助力 AI 计算迈向新高度
    2025-07-08
    9
  • 得一微存力芯片：以技术创新重构汽车大脑，赋能 “移动智能体”
    2025-07-08
    17

    • 热门型号

  • 1N5930
  • 1N5942B
  • 1N4001
  • MBR3050CT
  • RTA02-8D
  • 4116T
  • 5KP43A/4
  • 1N5260A
  • MC79L05
  • BZX85C30
  • 9510-G
  • W2PE-54WZ-P
  • 1N6063
  • 2SA673
  • 20IMX35
    • Hi,有什么可以帮您？ 在线客服 或 微信扫码咨询
  • 概述
  • 规格参数
  • 数据手册
    • 2025 ICPDF网 联系我们和版权申明:QQ 272164286