概述
数据手册SI8413DB 概述
P-Channel 20-V (D-S) MOSFET P通道20 -V （D -S ）的MOSFET
SI8413DB 数据手册
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PDF下载SPICE Device Model Si8413DB
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
CHARACTERISTICS
• P-Channel Vertical DMOS
• Macro Model (Subcircuit Model)
• Level 3 MOS
• Apply for both Linear and Switching Application
• Accurate over the −55 to 125°C Temperature Range
• Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
DESCRIPTION
The attached spice model describes the typical electrical
characteristics of the p-channel vertical DMOS. The subcircuit
model is extracted and optimized over the −55 to 125°C
temperature ranges under the pulsed 0-V to 5-V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
A novel gate-to-drain feedback capacitance network is used to model
the gate charge characteristics while avoiding convergence difficulties
of the switched Cgd model. All model parameter values are optimized
to provide a best fit to the measured electrical data and are not
intended as an exact physical interpretation of the device.
SUBCIRCUIT MODEL SCHEMATIC
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
www.vishay.com
Document Number: 72978
S-52398Rev. B, 21-Nov-05
1
SPICE Device Model Si8413DB
Vishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Simulated Measured
Parameter
Symbol
Test Condition
Unit
Data
Data
Static
Gate Threshold Voltage
On-State Drain Currenta
VGS(th)
ID(on)
0.91
103
V
A
V
DS = VGS, ID = −250 µA
VDS = −5 V, VGS = −4.5 V
0.038
0.053
7.4
0.0393
0.052
7.4
VGS = −4.5 V, ID = −1 A
VGS = −2.5 V, ID = −1 A
Drain-Source On-State Resistancea
rDS(on)
Ω
Forward Transconductancea
Diode Forward Voltagea
gfs
S
V
VDS = −10 V, ID = −1 A
VSD
I
S = −1 A, VGS = 0 V
−0.78
−0.80
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Qg
Qgs
Qgd
td(on)
tr
11
1.7
5.1
55
14
1.7
5.1
31
nC
ns
V
DS = −10 V, VGS = −4.5 V, ID = −1 A
40
50
VDD = −10 V, RL = 10 Ω
D ≅ −1 A, VGEN = −4.5 V, RG = 6 Ω
I
Turn-Off Delay Time
Fall Time
td(off)
tf
186
47
105
90
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com
Document Number: 72978
S-52398Rev. B, 21-Nov-05
2
SPICE Device Model Si8413DB
Vishay Siliconix
COMPARISON OF MODEL WITH MEASURED DATA (TJ=25°C UNLESS OTHERWISE NOTED)
www.vishay.com
Document Number: 72978
S-52398Rev. B, 21-Nov-05
3
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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