概述
规格参数
数据手册SI9105DN02-T1-E3 概述
1-W High-Voltage Switchmode Regulator 1 -W高压开关模式稳压器 开关式稳压器或控制器
SI9105DN02-T1-E3 规格参数
| 是否无铅： | 不含铅 | 生命周期： | Obsolete |
| 零件包装代码： | QLCC | 包装说明： | QCCJ, LDCC20,.4SQ |
| 针数： | 20 | Reach Compliance Code： | unknown |
| ECCN代码： | EAR99 | HTS代码： | 8542.39.00.01 |
| 风险等级： | 5.83 | Is Samacsys： | N |
| 模拟集成电路 - 其他类型： | SWITCHING REGULATOR | 控制模式： | CURRENT-MODE |
| 最大输入电压： | 13.5 V | 最小输入电压： | 10 V |
| 标称输入电压： | 10 V | JESD-30 代码： | S-PQCC-J20 |
| JESD-609代码： | e3 | 长度： | 8.9662 mm |
| 湿度敏感等级： | 1 | 功能数量： | 1 |
| 端子数量： | 20 | 最高工作温度： | 85 °C |
| 最低工作温度： | -40 °C | 最大输出电流： | 2 A |
| 封装主体材料： | PLASTIC/EPOXY | 封装代码： | QCCJ |
| 封装等效代码： | LDCC20,.4SQ | 封装形状： | SQUARE |
| 封装形式： | CHIP CARRIER | 峰值回流温度（摄氏度）： | 250 |
| 认证状态： | Not Qualified | 座面最大高度： | 4.57 mm |
| 子类别： | Switching Regulator or Controllers | 表面贴装： | YES |
| 切换器配置： | SINGLE | 最大切换频率： | 3000 kHz |
| 技术： | BCDMOS | 温度等级： | INDUSTRIAL |
| 端子面层： | Matte Tin (Sn) | 端子形式： | J BEND |
| 端子节距： | 1.27 mm | 端子位置： | QUAD |
| 处于峰值回流温度下的最长时间： | 40 | 宽度： | 8.9662 mm |
| Base Number Matches： | 1 |
SI9105DN02-T1-E3 数据手册
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PDF下载Si9105
Vishay Siliconix
1-W High-Voltage Switchmode Regulator
DESCRIPTION
FEATURES
•
•
•
•
•
•
•
•
CCITT Compatible
The Si9105 high-voltage switchmode regulator is a mono-
lithic BiC/DMOS integrated circuit which contains most of the
components necessary to implement a high-efficiency dc/dc
converter in ISDN terminals up to 3 watts. A 0.5 mA max
supply current makes possible the design of a dc/dc con-
verter with 60 % efficiency at 25 mW, therefore meeting the
recommended performance under the CCITT I.430 specifi-
cations.
Current-Mode Control
Low Power Consumption (less than 5 mW)
10 to 120 V Input Range
200 V, 250 mA MOSFET
Internal Start-Up Circuit
Current-Mode Control
SHUTDOWN and RESET
This device may be used with an appropriate transformer to
implement isolated flyback power converter topologies to
provide single or multiple regulated dc outputs (i.e., 5 V).
The Si9105 is available in both standard and lead (Pb)-free
16-pin wide-body SOIC, 14-pin plastic DIP and 20-pin PLCC
packages which are specified to operate over the industrial
temperature range of - 40 °C to 85 °C.
FUNCTIONAL BLOCK DIAGRAM
OSC OSC
IN OUT
FB
COMP
DISCHARGE
Error
Amplifier
OSC
-
Clock (½ f
)
+
OSC
V
REF
2 V
Current-Mode
Comparator
-
4 V (1 %)
R
S
+
Q
Ref
Gen
+
-
DRAIN
- V
C/L
Comparator
IN
(BODY)
1.2 V
Current
Sources
To
Internal
Circuits
BIAS
SOURCE
V
CC
V
CC
SHUTDOWN
RESET
Undervoltage Comparator
S
R
+V
IN
-
Q
+
8.7 V
-
+
9.3 V
Document Number: 70003
S-70497-Rev. I, 19-Mar-07
www.vishay.com
1
Si9105
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Parameter
Limit
Unit
Voltages Referenced to - VIN (VCC < + VIN + 0.3 V)
VCC
+VIN
VDS
15
V
120
200
I
I
D (Peak) (300 µs pulse, 2 % duty cycle)
D (rms)
2
A
250
mA
Logic Inputs (RESET, SHUTDOWN, OSC IN)
Linear Inputs (FEEDBACK, SOURCE)
HV Pre-Regulator Input Current (continuous)
Storage Temperature
- 0.3 V to VCC + 0.3 V
V
- 0.3 V to 7 V
5
- 65 to 125
- 40 to 85
150
mA
°C
Operating Temperature
Junction Temperature (TJ)
14-Pin Plastic DIP (J Suffix)b
16-Pin Plastic Wide-Body SOIC (W Suffix)c
750
Power Dissipation (Package)a
mW
°C/W
900
20-Pin PLCC (N Suffix)d
14-Pin Plastic DIP
1400
167
Thermal Impedance (ΘJA
Notes:
)
16-Pin Plastic Wide-Body SOIC
20-Pin PLCC
140
90
a. Device Mounted with all leads soldered or welded to PC board.
b. Derate 6 mW/°C above 25 °C.
c. Derate 7.2 mW/°C above 25 °C.
d. Derate 11.2 mW/°C above 25 °C.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING RANGE
Parameter
Limit
Unit
Voltages Referenced to - VIN
VCC
10 to 13.5
10 to 120
V
+ VIN
fOSC
40 kHz to 1 MHz
25 kΩ to 1 MΩ
0 to VCC - 3 V
0 to VCC
ROSC
Linear Inputs
Digital Inputs
V
a
SPECIFICATIONS
Test Conditions
Limits
Unless Otherwise Specified
DISCHARGE = - VIN = 0 V
VCC = 10 V, + VIN = 48 V
RBIAS = 820 kΩ, ROSC = 910 kΩ
Parameter
Reference
Symbol
Tempb
Minc
Typd
Maxc
Unit
OSC IN = - VIN (OSC Disabled)
VR
Output Voltage
Room
3.92
4.00
4.08
V
RL = 10 MΩ
Output Impedancee
Short Circuit Current
Temperature Stabilitye
Long Term Stabilitye
Oscillator
ZOUT
ISREF
TREF
OSC IN = - VIN
OSC IN = - VIN, VREF = - VIN
OSC IN = - VIN
Room
Room
Full
15
70
300
100
45
130
kΩ
µA
0.25
5.00
1.0
mV/°C
mV
t = 1000 h, TA = 125 °C
Room
25.00
Maximum Frequencye
Initial Accuracy
fMAX
fOSC
Δf/f
ROSC = 0
See Note e
Room
Room
Room
Full
1
3
MHz
kHz
32
40
48
15
Voltage Stability
Temperature Coefficiente
Δf/f = f(13.5 V) - f(9.5 V)/f(9.5 V)
10
%
TOSC
200
500
ppm/°C
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2
Document Number: 70003
S-70497-Rev. I, 19-Mar-07
Si9105
Vishay Siliconix
a
SPECIFICATIONS
Test Conditions
Limits
Unless Otherwise Specified
DISCHARGE = - VIN = 0 V
VCC = 10 V, + VIN = 48 V
RBIAS = 820 kΩ, ROSC = 910 kΩ
Parameter
Symbol
Tempb
Minc
Typd
Maxc
Unit
Error Amplifier
FB Tied to COMP
VFB
Feedback Input Voltage
Room
3.96
4
4.04
500
V
OSC IN = - VIN (OSC Disabled)
IFB
AVOL
VOS
BW
OSC IN = - VIN, VFB = 4 V
Input BIAS Current
Room
Room
Room
Room
Room
Room
Room
Room
25
80
nA
dB
Open Loop Voltage Gaine
Input OFFSET Voltage
Unity Gain Bandwidthe
OSC IN = - VIN (OSC Disabled)
60
15
40
mV
MHz
kΩ
OSC IN = - VIN
0.5
0.8
1
ZOUT
Dynamic Output Impedance
Source (VFB = 3.4 V)
Sink (VFB = 4.5 V)
10 V ≤ VCC ≤ 13.5 V
- 1.2
0.08
70
- 0.32
IOUT
Output Current
mA
dB
0.05
Power Supply Rejection
PSRR
Current Limit
RL = 100 Ω from DRAIN to VCC
VSOURCE
td
Threshold Voltage
Delay to Outpute
Room
Room
0.8
1.0
1.2
V
VFB = 0 V
RL = 100 Ω from DRAIN to VCC
VSOURCE = 1.5 V, See Figure 1
200
300
ns
+ VIN
+ IIN
IIN = 10 µA
VCC ≥ 10 V
Input Voltage
Room
Room
Room
120
V
Input Leakage Current
Pre-Regulator Start-Up Current
10
µA
mA
ISTART
Pulse Width ≤ 300 µs, VCC = 7 V
8
15
V
CC Pre-Regulator
VREG
IPRE-REGULATOR = 10 µA
Room
7.5
9.3
9.7
9.2
Turn-Off Threshold Voltage
RL = 100 Ω from DRAIN to VCC
V
VUVLO
VDELTA
Undervoltage Lockout
Room
Room
7.0
8.7
0.5
See Detailed Description
V
REG - VUVLO
0.25
Supply
ICC
IBIAS
tSD
Supply Current
Room
Room
Room
Room
Room
0.35
7.5
50
0.5
mA
µA
Bias Current
VSOURCE = - VIN, See Figure 2
See Figure 3
SHUTDOWN Delay
SHUTDOWN Pulse Width
RESET Pulse Width
100
tSW
tRW
50
50
ns
Latching Pulse Width
SHUTDOWN and RESET Low
tLW
Room
25
VIL
VIH
IIH
Input Low Voltage
Room
Room
Room
Room
2.0
5
V
Input High Voltage
8.0
- 35
200
VIN = 10 V
VIN = 0 V
Input Current Input Voltage High
Input Current Input Voltage Low
MOSFET Switch
1
µA
IIL
- 25
V(BR)DSS
rDS(on)
IDSS
IDRAIN = 100 µA
IDRAIN = 100 mA
VDRAIN = 100 V
Breakdown Voltage
Full
220
5
V
Ω
Drain-Source On Resistanceg
Drain Off Leakage Current
Drain Capacitance
Room
Room
Room
7
10
µA
pF
CDS
35
Notes:
a. Refer to PROCESS OPTION FLOWCHART for additional information.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
e. Guaranteed by design, not subject to production test.
f. CSTRAY Pin 8 = ≤ 5 pF.
g .Temperature coefficient of rDS(on) is 0.75 % per °C, typical.
Document Number: 70003
S-70497-Rev. I, 19-Mar-07
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3
Si9105
Vishay Siliconix
TIMING WAVEFORMS
V
1.5 V
SOURCE
-
-
CC
t
f
≤ 10 ns
t
r
≤ 10 ns
50 %
SHUTDOWN
0 -
50 %
0
t
d
V
CC
t
SD
V
-
CC
DRAIN
0
DRAIN
0
10 %
10 %
Figure 2.
Figure 1.
t
SW
V
CC
t , t ≤ 10 ns
r
f
SHUTDOWN
0
50 %
50 %
-
-
t
LW
V
CC
50 %
50 %
RESET
0
50 %
t
RW
Figure 3.
TYPICAL CHARACTERISTICS
1 M
100 k
10 k
10 k
100 k
1 M
r
- Oscillator Resistance (Ω)
OSC
Figure 4. Output Switching Frequency
vs. Oscillator Resistance
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4
Document Number: 70003
S-70497-Rev. I, 19-Mar-07
Si9105
Vishay Siliconix
PIN CONFIGURATIONS
PLCC-20
SO-16
(Wide-Body)
PDIP-14
3
2
1
20 19
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
14
13
12
11
10
9
4
5
6
7
8
18
17
16
15
14
8
9
10 11 12 13
Top View
Top View
Top View
PIN DESCRIPTION
Pin Number
Function
14-Pin Plastic DIP
16-Pin SOIC
20-Pin PLCC
SOURCE
- VIN
4
5
1
2
7
8
VCC
6
7
4
5
9
OSCOUT
OSCIN
10
8
9
6
7
11
12
14
16
17
18
20
2
DISCHARGE
VREF
10
11
12
13
14
1
8
SHUTDOWN
RESET
COMP
FB
9
10
11
12
13
14
16
3, 15
BIAS
+ VIN
2
3
DRAIN
NC
3
5
1, 4, 6, 13, 15, 19
ORDERING INFORMATION
Standard
Part Number
Lead (Pb)-free
Part Number
Temperature Range
Package
Si9105DJ02
Si9105DW
Si9105DJ02-E3
PDIP-14
SOIC-16 (WB)
PLCC-20
Si9105DW-T1
(With Tape and Reel)
Si9105DW-T1-E3
(With Tape and Reel)
- 40 to 85 °C
Si9105DN02
Si9105DN02-E3
Si9105DN02-T1
(With Tape and Reel)
Si9105DN02-T1-E3
(With Tape and Reel)
Document Number: 70003
S-70497-Rev. I, 19-Mar-07
www.vishay.com
5
Si9105
Vishay Siliconix
DETAILED DESCRIPTION
Pre-Regulator/Start-Up Section
Due to the low quiescent current requirement of the Si9105
control circuitry, bias power can be supplied from the unreg-
ulated input power source, from an external regulated low-
voltage supply, or from an auxiliary "bootstrap" winding on
the output inductor or transformer.
The output of the reference section is connected internally to
the non-inverting input of the error amplifier. Nominal refer-
ence output voltage is 4 V. The trimming procedure that is
used on the Si9105 brings the output of the error amplifier
(which is configured for unity gain during trimming) to within
1 % of 4 V. This automatically compensates for the input
offset voltage in the error amplifier.
When power is first applied during start-up, + VIN will draw a
constant current. The magnitude of this current is determined
by a high-voltage depletion MOSFET device which is con-
nected between + VIN and VCC. This start-up circuitry pro-
vides initial power to the IC by charging an external bypass
capacitance connected to the VCC pin. The constant current
is disabled when VCC exceeds 9.3 V. If VCC is not forced to
exceed the 9.3 V threshold, then VCC will be regulated to a
nominal value of 9.3 V by the pre-regulator circuit.
The output impedance of the reference section has been
purposely made high so that a low impedance external volt-
age source can be used to override the internal voltage
source, if desired, without otherwise altering the perfor-
mance of the device.
Error Amplifier
As the supply voltage rises toward the normal operating con-
ditions, an internal undervoltage (UV) lockout circuit keeps
the output MOSFET disabled until VCC exceeds the under-
voltage lockout threshold (typically 8.7 V). This guarantees
that the control logic will be functioning properly and that suf-
ficient gate drive voltage is available before the MOSFET
turns on. The design of the IC is such that the undervoltage
lockout threshold will not exceed the pre-regulator turn-off
voltage. Power dissipation can be minimized by providing an
external power source to VCC such that the constant current
source is always disabled.
Closed-loop regulation is provided by the error amplifier,
whose 1 kΩ dynamic output impedance enables it to be used
with feedback compensation (unlike transconductance
amplifiers). A MOS differential input stage provides for low
input current. The noninverting input to the error amplifier
(VREF) is internally connected to the output of the reference
supply and should be bypassed with a small capacitor to
ground.
Oscillator Section
BIAS
The oscillator consists of a ring of CMOS inverters, capaci-
tors, and a capacitor discharge switch. Frequency is set by
an external resistor between the OSC IN and OSC OUT pins.
(See Typical Characteristics graph of resistor value vs. fre-
quency.) The DISCHARGE pin should be tied to - VIN for nor-
mal internal oscillator operation. A frequency divider in the
logic section limits switch duty cycle to a maximum of 50 %
by locking the switching frequency to one half of the oscillator
frequency.
To properly set the bias for the Si9105, a 820 kΩ resistor
should be tied from BIAS to - VIN. This determines the mag-
nitude of bias current in all of the analog sections and the
pull-up current for the SHUTDOWN and RESET pins. The
current flowing in the bias resistor is nominally 7.5 µA.
Reference Section
Remote synchronization can be accomplished by capacitive
coupling of a synchronization pulse into the OSC IN terminal.
For a 5 V pulse amplitude and 0.5 µs pulse width, typical val-
ues would be 100 pF in series with 3 kΩ to OSC IN.
The reference section of the Si9105 consists of a tempera-
ture compensated buried zener and trimmable divider net-
work.
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6
Document Number: 70003
S-70497-Rev. I, 19-Mar-07
Si9105
Vishay Siliconix
DETAILED DESCRIPTION (CONT’D)
SHUTDOWN and RESET
Output Switch
SHUTDOWN and RESET are intended for overriding the
output MOSFET switch via external control logic. The two
inputs are fed through a latch preceding the output switch.
Depending on the logic state of RESET, SHUTDOWN can
be either a latched or unlatched input. The output is off when-
ever SHUTDOWN is low. By simultaneously having SHUT-
DOWN and RESET low, the latch is set and SHUTDOWN
has no effect until RESET goes high. The truth table for these
inputs is given in Table 1.
The output switch is a 7 Ω , 200 V lateral DMOS transistor.
Like discrete MOSFETs, the switch contains an intrinsic
body-drain diode. However, the body contact in the Si9105 is
connected internally to - VIN and is independent of the
SOURCE.
Table 1. Truth Table for the SHUTDOWN and RESET Pins
SHUTDOWN
RESET
Output
Normal Operation
H
H
L
H
Both pins have internal current source pull-ups and can be
left disconnected when not in use. An added feature of the
current sources is the ability to connect a capacitor and an
open-collector driver to the SHUTDOWN pin to provide vari-
able shutdown time.
Normal Operation (No Change)
Off (Not Latched)
H
L
L
L
Off (Latched)
Off (Latched, No Change)
APPLICATIONS
1N5819
+ 5 V
+V
IN
7
8
2
NC
11
0.1 µF
220 µF
L
p
= 3.8 mH
2
5.6 V
OUTPUT
3
8
3
6
1N4148
10
910 k
7
+
-
0.1 µF
47 µF
Si9105DJ
20 µF
150 k
71.5 k
1 %
12
10
1
14
13
4
NC
0.1 µF
15 k
0.22 µF
-
5 V
9
4
1N5819
12 V
0.1
µF
5
9
1 µF
47.5 k
1 %
0.1
µF
3.9 Ω
820 k
INPUT GND (GND Plane)
Figure 5. CCITT Compatible ISDN Terminal Power Supply
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?70003.
Document Number: 70003
S-70497-Rev. I, 19-Mar-07
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7
Package Information
Vishay Siliconix
SOIC (WIDE-BODY): 16-LEAD (POWER IC ONLY)
ECN: S-40079—Rev. A, 02-Feb-04
DWG: 5910
Ğ0.06$0.002D
0.2025$0.001
CAVITY NO.
0.334$0.005
R0.004
0.010
16 15 14 13 12 11 10
9
8
R0.008
R0.009
0.1475$0.001
0.295$0.001
0.070$0.005
R0.004
4°$2°
1
2
3
4
5
6
7
0.032$0.005
DETAIL A
0.055$0.005
PIN 1 INDICATOR
Ğ0.047ꢀ0.007$0.001 dp
SURFACE POLISHED
0.334$0.005
0.291$0.001
0.020ꢀ45°
7°(4ꢀ)
0.405$0.001
0.098$0.002
0.091$0.001
R0.004
0.295$0.001
0.406$0.004
DETAIL A
0.041$0.001
0.050 TYP.
0.006$0.002
0.017$0.0003
All Dimensions In Inches
Document Number: 72805
28-Jan-04
www.vishay.com
1
Package Information
Vishay Siliconix
PLCC: 2O-LEAD (POWER IC ONLY)
D−SQUARE
A
2
MILLIMETERS
INCHES
D −SQUARE
1
Dim
A
A1
A2
B
B1
D
D1
D2
e1
Min
4.20
Max
4.57
3.04
−
Min
Max
0.180
0.120
−
B
1
0.165
0.090
0.020
0.013
0.026
0.385
0.350
0.290
2.29
B
0.51
0.331
0.661
9.78
0.553
0.812
10.03
9.042
8.38
0.021
0.032
0.395
0.356
0.330
e
1
D
2
8.890
7.37
1.27 BSC
0.050 BSC
ECN: S-40081—Rev. A, 02-Feb-04
DWG: 5917
A
1
A
0.101 mm
0.004″
Document Number: 72812
28-Jan-04
www.vishay.com
1
Package Information
Vishay Siliconix
PDIP: 14-LEAD (POWER IC ONLY)
14
1
13
2
12
3
11
4
10
5
9
6
8
7
E
E
1
D
S
1
Q
A
A
1
L
15°
MAX
C
e
1
B
B
1
e
A
MILLIMETERS
INCHES
Min
Dim
A
A1
B
B1
C
D
Min
3.81
0.38
0.38
0.89
0.20
17.27
7.62
5.59
2.29
7.37
2.79
1.27
1.02
Max
5.08
1.27
0.51
1.65
0.30
19.30
8.26
7.11
2.79
7.87
3.81
2.03
2.03
Max
0.200
0.050
0.020
0.065
0.012
0.760
0.325
0.280
0.110
0.310
0.150
0.080
0.080
0.150
0.015
0.015
0.035
0.008
0.680
0.300
0.220
0.090
0.290
0.110
0.050
0.040
E
E1
e1
eA
L
Q1
S
ECN: S-40081—Rev. A, 02-Feb-04
DWG: 5919
Document Number: 72814
28-Jan-04
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1
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
1
SI9105DN02-T1-E3 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| SI9105DW | VISHAY | 1-W High-Voltage Switchmode Regulator | 获取价格 |
|
| SI9105DW-T1 | VISHAY | 1-W High-Voltage Switchmode Regulator | 获取价格 |
|
| SI9105DW-T1-E3 | VISHAY | 1-W High-Voltage Switchmode Regulator | 获取价格 |
|
| SI9105_07 | VISHAY | 1-W High-Voltage Switchmode Regulator | 获取价格 |
|
| SI9108 | VISHAY | 1-W High-Voltage Switchmode Regulator | 获取价格 |
|
| SI9108DJ02 | VISHAY | Switching Regulator, Current-mode, 0.1A, 1000kHz Switching Freq-Max, BCDMOS, PDIP14, | 获取价格 |
|
| SI9108DN02-E3 | VISHAY | Battery Charge Controller, Current-mode, 0.1A, 1000kHz Switching Freq-Max, BCDMOS, PQCC20 | 获取价格 |
|
| SI9108DN02-T1 | VISHAY | IC 2 A SWITCHING REGULATOR, 3000 kHz SWITCHING FREQ-MAX, PQCC20, PLASTIC, LCC-20, Switching Regulator or Controller | 获取价格 |
|
| SI9108DW | VISHAY | 暂无描述 | 获取价格 |
|
| SI9108DW-T1 | VISHAY | Switching Regulator, Current-mode, 0.1A, 1000kHz Switching Freq-Max, BCDMOS, PDSO16 | 获取价格 |
|
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