29F400B-90PC 概述
Flash, 512KX8, 90ns, PDSO44, PLASTIC, SOP-44 闪存
29F400B-90PC 规格参数
生命周期: | Obsolete | 零件包装代码: | SOIC |
包装说明: | PLASTIC, SOP-44 | 针数: | 44 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.51 | 风险等级: | 5.47 |
Is Samacsys: | N | 最长访问时间: | 90 ns |
备用内存宽度: | 16 | 启动块: | BOTTOM |
JESD-30 代码: | R-PDSO-G44 | 长度: | 28.2 mm |
内存密度: | 4194304 bit | 内存集成电路类型: | FLASH |
内存宽度: | 8 | 功能数量: | 1 |
端子数量: | 44 | 字数: | 524288 words |
字数代码: | 512000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 512KX8 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | SOP | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 并行/串行: | PARALLEL |
编程电压: | 5 V | 认证状态: | Not Qualified |
座面最大高度: | 2.8 mm | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 4.5 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子形式: | GULL WING |
端子节距: | 1.27 mm | 端子位置: | DUAL |
类型: | NOR TYPE | 宽度: | 13.3 mm |
最长写入周期时间 (tWC): | 0.09 ms | Base Number Matches: | 1 |
29F400B-90PC 数据手册
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PDF下载BRIGHT
Microelectronics
Inc.
Preliminary BM29F400T/BM29F400B
4MEGABIT (512K x 8/ 256K x 16)
5VOLT SECTOR ERASE CMOS FLASH MEMORY
GENERAL DESCRIPTION
The BM29F400 is an 4 Megabit, 5.0 volt-only CMOS Flash memory device organized as a 512
Kbytes of 8-bits each, or 256 Kbytes of 16 bits each. The device is offered in standard 44-pin SOP
and 48-pin TSOP packages. It is designed to be programmed and erased in-system with a 5.0 volt
power-supply and can also be reprogrammed in standard EPROM programmers.
With access times of 90 nS, 120 nS, and 150 nS, the BM29F400 has separate chip enable CE, write
enable WE , and output enable OE controls. BMI's memory devices reliably store memory data even
after 100,000 program and erase cycles.
The BM29F400 is entirely pin and command set compatible with the JEDEC standard for 4 Megabit
Flash memory devices. Commands are written to the command register using standard
microprocessor write timings. Register contents serve as input to an internal state-machine which
controls the erase and programming circuitry. Write cycles also internally latch addresses and data
needed for the programming and erase operations.
The BM29F400 is programmed by executing the program command sequence. This will start the
internal byte/word programming algorithm that automatically times the program pulse width and also
verifies the proper cell margin. Erase is accomplished by executing either the sector erase or chip
erase command sequence. This will start the internal erasing algorithm that automatically times the
erase pulse width and also verifies the proper cell margin. No preprogramming is required prior to
execution of the internal erase algorithm. Sectors of the BM29F400 Flash memory array are
electrically erased via Fowler-Nordheim tunneling. Bytes/words are programmed one byte/word at a
time using a hot electron injection mechanism.
The BM29F400 features a sector erase architecture. The device memory array is divided into one 16
Kbytes, two 8 Kbytes, one 32 Kbytes, and seven 64 Kbytes. Sectors can be erased individually or in
groups without affecting the data in other sectors. Multiple sector erase and full chip erase capabilities
add flexibility to altering the data in the device. To protect this data from accidental program and
erase, the device also has a sector protect function. This function hardware write protects the
selected sector(s). The sector protect and sector unprotect features can be enabled in a PROM
programmer.
For read, program and erase operation, the BM29F400 needs a single 5.0 volt power-supply.
Internally generated and well regulated voltages are provided for the program and erase operation. A
low Vcc detector inhibits write operations on loss of power. End of program or erase is detected by the
Ready/Busy status pin, Data Polling of DQ7, or by the Toggle Bit I feature on DQ6. Once the program
or erase cycle has been successfully completed, the device internally resets to the Read mode.
The BM29F400 also has a hardware RESET pin. Driving the RESET pin low during execution of an
Internal Programming or Erase command will terminate the operation and reset the device to the
Read mode. The RESET pin may be tied to the system reset circuitry, so that the system will have
access to boot code upon completion of system reset, even if the Flash device is in the process of an
Internal Programming or Erase operation. If the device is reset using the RESET pin during an
Internal Programming or Erase operation, data in the address locations on which the internal state
A Winbond Company
Publication Release Date: May 1999
Revision A1
- 1 -
BRIGHT
Microelectronics
Inc.
Preliminary BM29F400T/BM29F400B
machine is operating will be erroneous. Thus, these address locations will need rewriting after the
device is reset.
FEATURES
· 5.0 V +/- 10% Program and Erase
- Minimizes system-level power requirements
High performance
· RESET
- Hardware pin resets the internal state
machine to the read mode
- 90 nS access time
· Internal Erase Algorithms
- Automatically erases a sector, any
combination of sectors, or the entire
chip
· Compatible with JEDEC-standard Commands
- Uses software commands, pinouts, and
packages following industry standards for
single power supply Flash memory
· Internal Programming Algorithms
- Automatically programs and verifies data at a
specified address
· Typically 100,000 Program/Erase Cycles
· Sector Erase Architecture
- One 16 Kbytes, two 8 Kbytes, one 32 Kbytes,
and seven 64 Kbytes
· Low Power Consumption
- 20 mA typical active read current for Byte
Mode
- Any combination of sectors can be erased
concurrently; also supports full chip erase
- 28 mA typical active read current for Word
Mode
- 30 mA typical write/erase current
· Erase Suspend/Resume
- Suspend a sector erase operation to allow a
data read in a sector not being erased within
the same device
· Sector Protection
- Hardware method disables any combination
of sectors from a program or erase operation
· Ready/Busy
- RY/BY output pin for detection of
programming or erase cycle completion
· Boot Code Sector Architecture
-90
-120
120
120
-150
150
150
FAMILY PART NO.
Maximum Access Time (nS)
90
90
CE (E) Access time (nS)
OE (G) Access time (nS)
35
50
60
*This speed is available with Vcc = 5V +/- 5% variation
- 2 -
BRIGHT
Microelectronics
Inc.
Preliminary BM29F400T/BM29F400B
PIN CONFIGURATIONS
1
NC
RY/BY
A17
A7
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
/RESET
/WE
2
3
A8
4
A9
5
A6
A10
6
A5
A11
7
A4
A12
8
A3
A13
9
A2
A14
10
11
12
13
14
15
16
17
18
19
20
21
22
A1
A15
A0
A16
/CE
Vss
/OE
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
DQ3
DQ11
/BYTE
Vss
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
Vcc
PSOP
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
1
A15
A14
A13
A12
A11
A10
A9
/BYTE
Vss
2
3
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
Vcc
4
5
6
7
8
A8
9
NC
NC
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
/WE
/RESET
NC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
/OE
NC
RY/BY
NC
A17
A7
A6
A5
A4
Vss
A3
/CE
A2
A0
A1
Standard TSOP
PIN DESCRIPTION
A0 - A17
Address Inputs
DQ0 - DQ14
DQ15 /A-1
Data Input/Output
Data Input/Output, Address Mux.
Chip Enable
Output Enable
Write Enable
CE
OE
WE
Vss
Device Ground
Hardware RESET Pin, Active Low
Ready/Busy Status Output
Device Power Supply
Selects 8-bit or 16-bit Mode
Not Internally Connected
RESET
RY/BY
Vcc
BYTE
NC
A Winbond Company
Publication Release Date: May 1999
Revision A1
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BRIGHT
Microelectronics
Inc.
Preliminary BM29F400T/BM29F400B
BLOCK DIAGRAM
DQ0-DQ15
Vcc
Vss
RY/BY
Buffer
Erase Boltage
Generator
Input/Output
Buffers
State
Control
/WE
/BYTE
/RESET
Command
Register
PGM Voltage
Generator
STB
Chip Enable
/CE
/OE
Output Enable
Data Latch
Logic
STB
Y-Gating
Y-Decodor
Cell Matrix
Vcc Detector
Address
Latch
Timer
X-Decoder
A0-A16
A-1
BUS OPERATION
(1)
Table 1. Bus Operations (BYTE = VIH)
OPERATION
A0
A1
A6
A9
DQ0-DQ15
CE
WE
RESET
OE
(2)
Electronic ID Manufacturer
L
L
H
H
H
X
X
H
L
L
L
L
VID
VID
A9
X
Code
Code
DOUT
H
H
H
H
L
(2)
Electronic ID Device
L
L
H
X
L
L
L
X
L
H
A0
X
L
L
(3)
Read
L
A1
X
A6
X
Standby
X
X
H
H
L
High Z
High Z
Hardware Reset
Output Disable
Write
X
X
X
X
X
X
X
X
High Z
DIN(4)
X
A0
L
A1
H
X
A6
L
A9
VID
X
H
H
VID
(2)
Verify Sector Protect
H
X
Code
X
Temporary Sector Unprotect
X
X
X
Notes:
1. L = VIL, H = VIH, X = Don't Care. See DC Characteristics for voltage levels.
2. Manufacturer and device codes may also be accessed via a command register sequence. Refer to Table 6.
3. WE can be VIL if is VIL, OE at VIH initiates the write operations.
CE
4. Refer to Table 6 for valid D during a write operation.
IN
- 4 -
BRIGHT
Microelectronics
Inc.
Preliminary BM29F400T/BM29F400B
(1)
Table 2. Bus Operations (BYTE = VIL)
OPERATION
A0
A1
A6
A9
DQ0-DQ7
DQ8-DQ15
WE
CE
OE
RESET
(2)
Electronic ID Manufacturer
L
L
H
L
L
L
VID
VID
A9
X
Code
Code
DOUT
High Z
High Z
High Z
High Z
High Z
High Z
High Z
High Z
High Z
H
H
H
H
L
(2)
Electronic ID Device
L
L
H
X
L
L
L
X
L
H
H
X
X
H
L
H
A0
X
L
L
(3)
Read
L
A1
X
A6
X
Standby
X
X
H
H
L
High Z
High Z
Hardware Reset
Output Disable
Write
X
X
X
X
X
X
X
X
High Z
DIN(4)
H
H
H
VID
A0
L
A1
H
X
A6
L
A9
VID
X
(2)
Verify Sector Protect
H
X
Code
X
Temporary Sector Unprotect
X
X
X
Notes:
1. L = VIL, H = VIH, X = Don't Care. See DC Characteristics for voltage levels.
2. Manufacturer and device codes may also be accessed via a command register sequence. Refer to Table 6.
3. WE can be VIL if is VIL, OE at VIH initiates the write operations.
CE
4. Refer to Table 6 for valid D during a write operation.
IN
Table 3. Sector Protection Verify Electronic ID Codes
TYPE
Manufacturer Code
29F400T
A17-A12
A6
VIL
VIL
A1
VIL
VIL
A0
VIL
VIH
Code (Hex)
ADH
X
X
Byte
Word
Byte
23H
29F400
22,23H
ABH
29F400B
X
VIL
VIL
VIH
VIL
Word
22 ABH
01H(1)
Sector Protection
Sector Address
VIL
VIH
Note: Outputs 01H at protected sector addresses, and outputs 00H at unprotected addresses.
A Winbond Company
Publication Release Date: May 1999
Revision A1
- 5 -
BRIGHT
Microelectronics
Inc.
Preliminary BM29F400T/BM29F400B
Table 4. Sector Address Tables (BM29F400T)
A17
0
A16
0
A15
0
A14
X
A13
X
A12
X
(x8) Address Range
00000H-0FFFFH
10000H-1FFFFH
20000H-2FFFFH
30000H-3FFFFH
40000H-4FFFFH
50000H-5FFFFH
60000H-6FFFFH
70000H-77FFFH
78000H-79FFFH
7A000H-7BFFFH
7C000H-7FFFFH
(x16) Address Range
00000H-07FFFH
08000H-0FFFFH
10000H-17FFFH
18000H-1FFFFH
20000H-27FFFH
28000H-2FFFFH
30000H-37FFFH
38000H-3BFFFH
3C000H-3CFFFH
3D000H-3DFFFH
3E000H-3FFFFH
SA0
SA1
SA2
SA3
SA4
SA5
SA6
SA7
SA8
SA9
SA10
0
0
1
X
X
X
0
1
0
X
X
X
0
1
1
X
X
X
1
0
0
X
X
X
1
0
1
X
X
X
1
1
0
X
X
X
1
1
1
0
X
X
1
1
1
1
0
0
1
1
1
1
0
1
1
1
1
1
1
X
Notes:
1. The address range is A17:A-1 if in byte mode ( BYTE = VIL).
2. The address range is A17:A0, if in word mode ( BYTE = VIH).
Table 5. Sector Address Tables (BM29F400B)
A17
0
A16
0
A15
0
A14
0
A13
0
A12
X
(x8) Address Range
00000H-03FFFH
04000H-05FFFH
06000H-07FFFH
08000H-0FFFFH
10000H-1FFFFH
20000H-2FFFFH
30000H-3FFFFH
40000H-4FFFFH
50000H-5FFFFH
60000H-6FFFFH
70000H-7FFFFH
x16) Address Range
00000H-01FFFH
02000H-02FFFH
03000H-03FFFH
04000H-07FFFH
08000H-0FFFFH
10000H-17FFFH
18000H-1FFFFH
20000H-27FFFH
28000H-2FFFFH
30000H-37FFFH
38000H-3FFFFH
SA0
SA1
SA2
SA3
SA4
SA5
SA6
SA7
SA8
SA9
SA10
0
0
0
0
1
0
0
0
0
0
1
1
0
0
0
1
X
X
0
0
1
X
X
X
X
X
X
X
X
X
0
1
0
X
X
0
1
1
X
X
1
0
0
X
X
1
0
1
X
X
1
1
0
X
X
1
1
1
X
X
Notes:
1. The address range is A17:A-1 if in byte mode ( BYTE = VIL).
2. The address range is A17:A0, if in word mode ( BYTE = VIH).
- 6 -
BRIGHT
Microelectronics
Inc.
Preliminary BM29F400T/BM29F400B
Electronic ID Mode
The Electronic ID mode allows the reading out of a binary code from the device and will identify its
manufacturer and device type. This mode is intended for use by programming equipment for the
purpose of automatically matching the device to be programmed with its corresponding programming
algorithm. This mode is functional over the entire temperature range of the device.
To activate this mode, the programming equipment must force VID (11.5V to 12.5V) on address pin
A9. Two identifier bytes may then be sequenced from the device outputs by toggling address A0 from
VIL to VIH. All addresses are don't cares except A0, A1, and A6 (see Table 3).
Manufacturer and device codes may also be read via the command register; for instance, when the
BM29F400 is erased or programmed in a system without access to high voltage on the A9 pin. The
command sequence is illustrated in Table 6 (refer to Electronic ID Command section).
Byte 0 (A0 = VIL) represents the manufacturer's code (Bright Microelectronics = ADH) and byte 1 (A0
= VIH) the device identifier code (BM29F400T = 23H and BM29F400B = ABH for 8-bit mode;
BM29F400T = 2223H and BM29F400B = 22ABH for 16-bit mode). These two byte words are given in
Table 3. To read the proper device codes when executing the Electronic ID, all identifiers for
manufacturer and device will exhibit odd parity with the MSB (DQ7) defined as the parity bit. A1 must
be VIL (see Table 3).
Read Mode
The BM29F400 has three control functions which must be satisfied in order to obtain data at the
outputs. CE is the power control and should be used for device selection. OE is the output control
and should be used to gate data to the output pins if a device is selected. As shown in Table 1, WE
should be held at VIH, except in Write mode and Enable Sector Protect mode.
Address access time (t ) is equal to the delay from stable addresses to valid output data. Chip
ACC
enable access time (t ) is the delay from stable addresses and stable CE to valid data at the output
CE
pins. Output enable access time is the delay from the falling edge of OE to valid data at the output
pins (assuming the addresses have been stable for at least t -t time).
ACC OE
Standby Mode and Hardware RESET Standby Mode
The BM29F400 has two methods for implementing standby mode. The first method requires use of
both the CE pin and the RESET pin. The second method only requires use of the RESET pin.
When using both pins, a CMOS standby mode is achieved when both CE and RESET are held at
Vcc ±0.5V. In this condition, the current consumed is typically less than 100 uA. A TTL standby mode
is achieved with both CE and RESET held at V . In this condition, the typical current required is
IH
reduced to 200 uA. The device can be read with standard access time (t ) from either of these two
CE
standby modes.
When using the RESET pin only, a CMOS standby mode is achieved with RESET held at Vss
±0.5V. In this condition, the current consumed is typically less than 100 uA. A TTL standby mode is
achieved with RESET held at VIL. In this condition, the typical current required is reduced to 1mA.
Once the RESET pin is taken high, the device requires 500 nS of wake-up time before outputs are
valid for a read access.
A Winbond Company
Publication Release Date: May 1999
Revision A1
- 7 -
BRIGHT
Microelectronics
Inc.
Preliminary BM29F400T/BM29F400B
If the device is deselected during programming or erase, the device will draw active current until the
programming or erase operation is completed. In the standby mode the outputs are in a high
impedance state, independent of the OE input.
Output Disable Mode
With the OE input at a logic high level (VIH), output from the device is disabled. This will cause the
output pins to be in a high impedance state. It is shown in Table 1 that CE = VIL and WE = VIH for
Output Disable. This is to differentiate Output Disable mode from Write mode and to prevent
inadvertent writes during Output Disable.
Program and Erase Modes
Device programming and erase are accomplished via the command register. Contents of the register
serve as inputs to the internal state machine. Outputs of the state machine dictate the function of the
device.
The command register itself does not occupy any addressable memory locations. The register is a
latch used to store the commands along with the addresses and data information needed to execute
the command. The command register is written by bringing WE to VIL, while CE is at VIL and OE is
at VIH. Addresses are latched on the falling edge of WE or CE, whichever happens later, while data
is latched on the rising edge of WE or CE, whichever happens first. Standard microprocessor write
timings are used. Refer to AC Characteristics for Programming/Erase and their respective Timing
Waveforms for specific timing parameters.
Enable Sector Protect and Verify Sector Protect Modes
The BM29F400 has a hardware Sector Protect mode that disables both Programming and Erase
operation to the protected sector(s). There are total of 11 sectors in this device. The sector protect
feature is enabled using the programming equipment at the user's site. The device is shipped from
the BMI factory with all sectors unprotected.
To verify programming of the protection circuitry, the programming equipment must force VID on the
address pin A9 with CE and OE at VIL and WE at VIH. As shown in Table 2, scanning the sector
addresses while (A6, A1 and A0) = (0, 1, 0) will produce a 01H code at the device output pins for a
protected sector. In the Verify Sector Protect mode, the device will read 00H for an unprotected
sector. In this mode, the lower order addresses, except for A0, A1 and A6, are don't care. Address
locations with A1 = VIL are reserved for Electronic ID manufacturer and device codes. It is also
possible to determine if a sector is protected in-system by writing the Electronic ID command
(described in the Electronic ID command section below.)
Temporary Sector Unprotect Mode
The BM29F400 has a Temporary Sector Unprotect feature that allows the protect feature to be
temporarily suspended to change data in a protected sector in-system. The Temporary Sector
Unprotect mode is activated by setting the RESET pin to VID (11.5V - 12.5V).
In this mode, protected sectors can be programmed or erased by selecting the sector addresses.
Once VID is removed from the RESET pin, all previously protected sectors will be protected. Refer to
the Temporary Sector Unprotect algorithm and timing waveforms.
- 8 -
BRIGHT
Microelectronics
Inc.
Preliminary BM29F400T/BM29F400B
Read RESET Command
The read or RESET operation is initiated by writing the Read/Reset command sequence in to the
command register. Microprocessor read cycles retrieve the data from the memory. The device
remains enable for reads until the command register contents are changed.
The device will automatically power-up in the Read/Reset mode. In this case, a command sequence
is not needed to read the memory data. This default power-up to Read mode ensures that no spurious
changes of the data can take place during the power transitions. Refer to the AC Characteristics for
Read-Only Operation and the respective Timing Waveforms for the specific timing parameters.
Electronic ID Command
The BM29F400 contains an Electronic ID command to supplement the traditional PROM
programming method described in the Electronic ID Mode section. The operation is initiated by writing
the Electronic ID command sequence into the command register. Following command write, a read
cycle from address XX00H retrieves manufacturer code of ADH. A read cycle from address XX01H
returns the device code (BM29F400T = 23H and BM29F400B = ABH for 8-bit mode; BM29F400T =
2223H and BM29F400B = 22ABH for 16-bit mode) (see Table 3). All manufacturer and device codes
exhibit odd parity with the MSB (DQ7) defined as the parity bit.
The Electronic ID command can also be used to identify protected sectors. After writing the Electronic
ID command sequence, the CPU can scan the sector addresses (see Table 4 and Table 5) while (A6,
A1, A0) = (0, 1, 0). Protected sectors will return 01H on the data outputs and unprotected sectors will
return 00H. To terminate the operation, it is necessary to write the Read/Reset command sequence
into the command register.
Byte/Word Programming Command
The device is programmed on a byte-by-byte (or word-by-word) basis. Programming is a four bus
cycle operation (see Table 6). There are two "unlock" write cycles. These are followed by the program
set-up command and data write cycles. Addresses are latched on the falling edge of CE or WE ,
whichever happens later, and program data (PD) is latched on the rising edge of CE or WE ,
whichever happens first. The rising edge of CE or WE , whichever happens first, begins
programming using the Embedded Program Algorithm.
Upon executing the algorithm, the system is not required to provide further controls or timings. The
device will automatically provide adequate internally generated program pulses and verify the
programmed cell margin.
The automatic programming operation is completed when the data on DQ7 (also used as Data
Polling) is equivalent to the data written to this bit at which time the device returns to the read mode
and addresses are no longer latched (see Table 7, Write Operation Status Flags). Therefore, the
device requires that a valid address to the device be supplied by the system at this particular instance
of time for Data Polling operations. Data Polling must be performed at the memory location which is
being programmed.
Any commands written to the chip during the Internal Program Algorithm will be ignored. If a
hardware RESET occurs during the programming operation, the data at that particular location will
be corrupted.
A Winbond Company
Publication Release Date: May 1999
Revision A1
- 9 -
BRIGHT
Microelectronics
Inc.
Preliminary BM29F400T/BM29F400B
Byte/Word programming is allowed in any sequence, and across sector boundaries. However,
remember that a data "0" cannot be programmed to a data "1". Only erase operations can convert a
logical "0" to a logical "1". Attempting to program data from "0" to "1" may cause the device to exceed
time limits, or even worse, result in an apparent success according to the Data Polling algorithm. In
the later case, however, a subsequent read of this bit will show that the data is still a logical "0".
Figure 1 illustrates the Byte/Word Programming Algorithm using typical command strings and bus
operations.
The device will ignore any commands written to the chip during execution of the internal Byte/Word
Programming Algorithm. If a hardware RESET occurs during the Byte/Word Programming operation,
the data at that particular address location will be corrupted.
Chip Erase Command
Chip erase is a six bus cycle operation (see Table 6). The chip erase begins on the rising edge of the
last WE pulse in the command sequence.
Upon executing the Chip Erase command sequence, the device's internal state machine executes an
internal erase algorithm. The system is not required to provide further controls or timings. The device
will automatically provide adequate internally generated erase pulses and verify chip erase within the
proper cell margins. During chip erase, all sectors of the device are erased except protected sectors.
During Chip Erase, data bit DQ7 shows a logical "0". This operation is known as Data Polling. The
erase operation is completed when the data on DQ7 is a logical "1" (see Write Operation Status
section). Upon completion of the Chip Erase operation, the device returns to read mode. At this time,
the address pins are no longer latched. Note that Data Polling must be performed at a sector address
within any of the sectors being erased and not a protected sector to ensure that DQ7 returns a logical
"1" upon completion of the Chip Erase operation.
Figure 2 illustrates the Chip Erase Algorithm using typical command strings and bus operations.
The device will ignore any commands written to the chip during execution of the internal Chip Erase
algorithm. If a hardware RESET occurs during the Chip Erase operation, the data in the device will
be corrupted.
Sector Erase Command
Sector erase is a six bus cycle operation (see Table 6). The sector address (any address location
within the desired sector) is latched on the falling edge of WE , while the command data is latched on
the rising edge of WE . An internal device timer will initiate the Sector Erase operation 100 mS ±20%
(80 uS to 120 uS) from the rising edge of the WE pulse for the last Sector Erase command entered
on the device.
Upon executing the Sector Erase command sequence, the device's internal state machine executes
an internal erase algorithm. The system is not required to provide further controls or timings. The
device automatically provides adequate internally generated erase pulses and verify sector erase
within the proper cell margins. Protected sectors of the device will not be erased, even if they are
selected with the Sector Erase command.
Multiple sectors can be erased simultaneously by writing the sixth bus cycle command of the Sector
Erase command for each sector to be erased. The time between initiation of the next Sector Erase
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Microelectronics
Inc.
Preliminary BM29F400T/BM29F400B
command must be less than 80 mS to guarantee acceptance of the command by the internal state
machine. The time-out window can be monitored via the write operation status pin DQ3 (refer to the
Write Operation Status section for Sector Erase Timer operation). It is recommended that CPU
interrupts be disabled during this time to ensure that the subsequent Sector Erase commands can be
initiated within the 100 uS window. The interrupts can be re-enabled after the last Sector Erase
command is written. As mentioned above, an internal device timer will initiate the Sector Erase
operation 100 uS ±20% (80 uS to 120 uS) from the rising edge of the last WE pulse. Sector Erase
Timer Write Operation Status pin (DQ3) can be used to monitor time out window. If another falling
edge of the WE occurs within the 100 mS time-out window, the internal device timer is reset.
Loading the sector erase buffer may be done in any sequence and with any number of sectors.
Any command other than Sector Erase or Erase Suspend during this period and afterwards will
RESET the device to read mode, ignoring the previous command string. Resetting the device with a
hardware RESET after it has begun execution of a Sector Erase operation will result in the data in
the operated sectors being undefined and may be unrecoverable. In this case, restart the Sector
Erase operation on those sectors and attempt to allow them to complete the Erase operation.
Command Definitions
Device operations are selected by writing specific address and data sequences in to the Command
register. Writing incorrect addresses and data values or writing them in the improper sequence will
RESET the device to Read mode. Table 5 defines the valid register command sequences. Either of
the two Read/Reset commands will RESET the device (when applicable).
During Sector Erase operation, data bit DQ7 shows a logical "0". This operation is known as Data
Polling. Sector Erase operation is complete when data on DQ7 is a logical "1" (see Write Operation
Status section) at which time the device returns to read mode. At this time, the address pins are no
longer latched. Note that Data Polling must be performed at a sector address within any of the
sectors being erased and not a protected sector to ensure that DQ7 returns a logical "1" upon
completion of the Sector Erase operation.
Figure 2 illustrates the Sector Erase Algorithm using typical command strings and bus operations.
During execution of the Sector Erase command, only the Erase Suspend and Erase Resume
commands are allowed. All other commands will RESET the device to read mode.
Note: Do not attempt to write an invalid command sequence during the sector erase operation. Doing so will terminate the sector
erase operation and the device will /RESET to the read mode.
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Preliminary BM29F400T/BM29F400B
Table 6. Command Definitions
Command
Sequence
Bus Write
Cycles
First Bus Write
Cycle
Second Bus
Write Cycle
Third Bus Write
Cycle
Fourth Bus Write
Cycle
Fifth Bus Write
Cycle
Sixth Bus Write
Cycle
Reset/Read
Reset/Read
Required
addr
XXXXH
5555H
AAAAH
5555H
Data
F0H
AAH
addr
Data
addr
Data
addr
Data
addr
Data
addr
Data
1
4
Reset
Word
Byte
2AAAH
5555H
2AAAH
55H
55H
5555H
AAAAH
5555H
F0H
RA
RD
/Read
Word
4
AAH
90H
01H(7)
2223H
(T Device ID)
22ABH
Electronic
ID
(B Device ID)
Byte
AAAAH
5555H
AAAAH
23H
(T Device ID)
ABH
(B Device ID)
Program
Word
Byte
4
6
6
1
1
5555H
AAAAH
5555H
AAH
AAH
AAH
B0H
30H
2AAAH
5555H
2AAAH
5555H
2AAAH
5555H
55H
55H
55H
5555H
AAAAH
5555H
AAAAH
5555H
AAAAH
A0H
80H
80H
PA
PD
Chip
Erase
Word
Byte
5555H
AAAAH
5555H
AAH
AAH
2AAAH
5555H
2AAAH
5555H
55H
5555H
AAAAH
SA
10H
AAAAH
5555H
Sector
Erase
Word
Byte
55H
30H
AAAAH
XXXXH
AAAAH
Erase
Word
Byte
Suspend
Erase
Word
Byte
XXXXH
Resume
Notes:
1. Bus operations are defined in Tables 1 and 2.
2. For a Command Sequence, address bit A15 = X = Don't Care for all address commands except for Program Address (PA) and
Sector Address (SA).
3. RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses are latched on the falling edge of the WE pulse.
PD = Data to be programmed at location PA. Data is latched on the rising edge of WE .
SA = Address of sector to be erased. (See Table 4 for top boot and Table 5 for bottom boot.)
4. The Erase Suspend (B0H) and Erase Resume (30H) commands are valid only while the Sector Erase operation is in
progress.
5. Reading from, and programming to, non-erasing sectors is allowed in the Erase Suspend mode.
6. The System should generate the following address patterns:
Word Mode: 5555H or 2AAAH to addresses A0 - A14.
Byte Mode: AAAAH or 5555H to addresses A-1 - A14.
7. Address 00H returns the manufacturer's ID code (Bright Microelectronics - ADH), address 01H returns the device ID code.
Erase Suspend/Erase Resume Commands
The Erase Suspend command allows the user to interrupt a Sector Erase operation and read data
from or to a sector that is not being erased. The Erase Suspend command is applicable only during
Sector Erase operation, including, but not limited to, sector erase time-out period after any Sector
Erase commands (30H) have been initiated.
Writing the Erase Suspend command during the time-out will result in immediate termination of the
time-out period. Any subsequent writes of the Sector Erase command will be taken as the Erase
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Preliminary BM29F400T/BM29F400B
Resume command (30H). Note that any other commands during the time-out will RESET the device
to the Read mode. The address pins are "don't cares" when writing the Erase Suspend or Erase
Resume commands.
When the Erase Suspend command is written during a Sector Erase operation, the chip will take
between 1 uS and 230 uS to suspend the erase operation and go into Erase Suspended mode. During
this time, the system can monitor the Data Polling or Toggle Bit write operation status flags to
determine when the device has entered erase suspend mode (see Write Operation Status section.)
The system must use an address of an erasing sector to monitor Data Polling or Toggle Bit to
determine if the Sector Erase operation has been suspended.
In Erase Suspend mode, the system can read data from any sector that is not being erased. A read
from a sector being erased will result in write operation status data. After the system writes the Erase
Suspend command and waits until the Toggle Bit stops toggling, data reads from the device may then
be performed (see Write Operation Status section). Any further writes of the Erase Suspend
command at this time will be ignored.
To resume operation of Sector Erase, the Erase Resume command (30H) should be written. Any
further writes of the Erase Resume command at this point will be ignored. Another Erase Suspend
command can be written after the chip has resumed Sector Erase operation.
DQ7
Data Polling
The BM29F400 device features Data Polling as a method to indicate to the host the status of the
Byte/Word Programming, Chip Erase, and Sector Erase operations. When the Byte/Word
Programming operation is in progress, an attempt to read the device will produce the compliment of
the data last written to DQ7. Upon completion of the Byte/Word Programming operation, an attempt
to read the device will produce the true data last written to DQ7. When the Chip Erase or Sector
Erase operation is in progress, an attempt to read the device will produce a logical "0" at the DQ7
output. Upon completion of the Chip Erase or Sector Erase operation, an attempt to read the device
will produce a logical "1" at the DQ7 output. The flowchart for Data Polling (DQ7) is shown in Figure
3.
For Chip Erase, the Data Polling is valid after the rising edge of the sixth WE pulse in the six write
pulse sequence. For Sector Erase, the Data Polling is valid after the last rising edge of the sector
erase WE pulse. For both Chip Erase and Sector Erase, Data Polling must be performed at sector
address within any of the sectors being erased and not a protected sector. Otherwise, the Data
Polling status may not be valid. Once the Internal Algorithm operation is close to being completed,
the BM29F400 data pins (DQ7) may change asynchronously while the output enable (OE ) is
asserted low. This means that the device is driving status information on DQ7 at one instant and valid
data at the next instant of time. Depending on when the system samples the DQ7 output, it may read
status or valid data. Even if the device has completed the Internal Algorithm operation and DQ7 has a
valid data, data outputs on DQ0-DQ6 may be still invalid. Valid data on DQ0-DQ7 will be read on the
successive read attempts.
The Data Polling feature is only active during the Byte/Word Programming operation, Chip Erase
operation, Sector Erase Operation, or Sector Erase time-out window (see Table 7).
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Preliminary BM29F400T/BM29F400B
DQ6
Toggle Bit
The BM29F400 also features the "Toggle Bit" as a method to indicate to the host system the status of
the Internal Programming and Erase Algorithms (see Figure 4 for Toggle Bit (DQ6) flowchart.
During an Internal Programming or Erase Algorithm cycle, successive attempts to read (OE toggling)
data from the device will result in DQ6 toggling between one and zero. Once Internal Programming or
Erase operation is completed, DQ6 will stop toggling and valid data will be read on the next
successive attempts. During BYTE Programming, Toggle Bit is valid after the rising edge of the
fourth WE pulse in the four write pulse sequence. For Chip Erase, Toggle Bit is valid after the rising
edge of the sixth WE pulse in the six write pulse sequence. For Sector Erase, Toggle Bit is valid after
the last rising edge of the sector erase WE pulse. Toggle Bit is also active during sector erase time-
out window.
In Byte/Word Programming, if the sector being written to is protected, the Toggle Bit will toggle for
about 300 nS and then stop toggling without the data having changed. In Chip Erase or Sector Erase,
the device will erase all the selected sectors except for the ones that are protected. If all selected
sectors are protected, the chip will toggle the Toggle Bit for about 300ns and then drop back into read
mode, having changed none of the data. Either CE or OE toggling will cause the DQ6 Toggle Bit I to
toggle.
DQ5
Exceeded Timing Limits
DQ5 will indicate if the Byte/Word Programming, Chip Erase, or Sector Erase time has exceeded the
specified limits (internal pulse count) of the device. Under these conditions DQ5 will produce a logical
"1". This is a failure condition which indicates that the program or erase cycle was not successfully
completed. Data Polling is the only operating function of the device under this condition. The OE
and WE pins will control the output disable functions as described in Table 1.
If this failure condition occurs during Sector Erase operation, it specifies that particular sector is bad
and it may not be reused. However, other sectors are still functional and may continue to be used for
the program or erase operation. The device must be RESET to the Read mode to use other sectors
of the device. Write the Read/Reset command sequence to the device, and then execute the
Byte/Word Programming or Sector Erase command sequence. This allows the system to continue to
use the other active sectors in the device.
If this failure condition occurs during Chip Erase operation, it specifies that the entire chip is bad or
combination of sectors are bad. In so, the chip should not be reused.
If this failure condition occurs during Byte/Word Programming operation, it indicates the entire sector
containing that BYTE is bad and this sector may not be reused (other sectors are still functional and
can be reused.)
The DQ5 failure condition may also appear if a user tries to program a non blank location without
erasing. In this case, the device may exceed time limits and not complete the Internal Algorithm
operation. Hence, the system never reads a valid data on DQ7 bit and DQ6 never stops toggling.
Once the device has exceeded timing limits, the DQ5 bit will indicate a "1".
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Microelectronics
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Preliminary BM29F400T/BM29F400B
DQ3
Sector Erase Timer
After the completion of the initial Sector Erase command sequence, the sector erase time-out window
will begin. DQ3 will remain low until the time-out window is closed. Data Polling and Toggle Bit are
valid after the initial Sector Erase command sequence.
If Data Polling or the Toggle Bit indicates the device has been written with a valid erase command,
DQ3 maybe used to determine if the Sector Erase time-out window is still open. If DQ3 is a logical
"1", the internally controlled erase cycle has begun. Attempts to write subsequent command to the
device will be ignored until the erase operation is completed as indicated by Data Polling or Toggle
Bit. If DQ3 is a logical "0", the device will accept additional Sector Erase commands. To ensure the
command has been accepted, the system software should check the status of DQ3 prior to and
following each subsequent Sector Erase command. If DQ3 were high on the second status check, the
command may not have been accepted. Refer to Table 7: Write Operation Status Flags.
Write Operations Status
Table 7. Write Operation Status Flags(1)
Status
DQ7
/DQ7
0
DQ6
Toggle
Toggle
Data
DQ5
0
DQ3
N/A
1
In
Byte/Word Programming Operation
Chip or Sector Erase Operation
Progress
0
Erase Suspend Mode
Data
Data
Data
(Non-Erase Suspended Sector)
Exceeded
Byte/Word Programming Operation
/DQ7
0
Toggle
Toggle
1
1
0
1
Time Limits
Chip or Sector Erase Operation
Notes: DQ0, DQ1, DQ4 are reserve pins for future use.
RY/BY
Ready/Busy Status
The BM29F400 provides a RY/BY open-drain output pin as a way to indicate to the host system that
an Internal Programming or Erase operation is either in progress or has been completed. If the RY/BY
output is low, the device is busy with either a Programming or Erase operation. If the RY/BY output is
high, the device is ready to accept a Read, Programming, or Erase command. When the RY/BY pin
is low, the device will not accept any additional Programming or Erase commands with the exception
of the Erase Suspend command. If the BM29F400 is placed in an Erase Suspend mode, the RY/BY
output will be high.
During a programming operation, the RY/BY pin is driven low after the rising edge of the fourth WE
pulse. During an erase operation, the RY/BY pin is driven low after the rising edge of the sixth WE
pulse. The RY/BY pin will indicate a busy condition during the RESET pulse. Refer to the timing
waveforms for the RY/BY status pin for further clarification. The RY/BY pin is high in the Standby
mode.
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Preliminary BM29F400T/BM29F400B
Since this is an open-drain output, several RY/BY pins can be tied together with a pull-up resistor to
Vcc.
RESET Hardware Reset
The BM29F400 device may be RESET by driving the RESET pin to VIL. The RESET pin must be
kept low (VIL) for at least 500 nS. Pulling the RESET pin low will terminate any operation in progress.
The internal state machine will be RESET to the read mode 1 mS to 230 mS after the RESET pin is
driven low. If a hardware RESET occurs during a Programming or Erase operation, the data at that
particular location will be indeterminate.
When the RESET pin is low and the internal RESET is complete, the device goes to Standby mode
and cannot be accessed. Also, note that all the data output pins are tri-stated for the duration of the
RESET pulse. Once the RESET pin is taken high, the device requires 500 nS of wake up time until
outputs are valid for a read access.
The RESET pin may be tied to the system RESET input. Therefore, if a system RESET occurs
during an Internal Programming or Erase operation, the device will be automatically RESET to read
mode. This will enable the system's microprocessor to read the boot-up firmware from the Flag's
memory.
Data Protection
The BM29F400 is designed to offer protection against accidental erasure or programming caused by
spurious system level signals that may exist during power transitions. During power-up the device
automatically resets the internal state machine in the Read mode. Also, with its control register
architecture, alteration of the memory contents only occurs after successful completion of specific
multi-bus cycle command sequences. The device also incorporates several features to prevent
inadvertent write cycles resulting from Vcc power-up and power-down transitions or system noise.
Low Vcc Write Inhibit
To avoid initiation of a write cycle during Vcc power-up and power-down, a write cycle is locked out
for Vcc less than 3.2V (typically 3.7V). If Vcc < VLKO, the command register is disabled and all
internal programming/erase circuits are disabled. Under this condition the device will RESET to the
Read mode. Subsequent writes will be ignored until the Vcc level is greater than VLKO. It is the users
responsibility to ensure that the control pins are logically correct to prevent unintentional writes when
Vcc is above 3.2V.
Write Pulse "Glitch" Protection
Noise pulses of less than 5 nS (typical) on OE , CE or WE will not initiate a write cycle.
Logical Inhibit
Writing is inhibited by holding any one of OE = VIL, CE = VIH, or WE = VIH. To initiate a write cycle
CE and WE must be a logical "0" while OE is a logical "1".
Power-Up Write Inhibit
Power-up of the device with WE = CE = VIL and OE = V will not accept commands on the rising
IH
edge of WE . The internal state machine is automatically RESET to the Read mode on power-up.
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Microelectronics
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Preliminary BM29F400T/BM29F400B
Sector Unprotect
The BM29F400 also features a sector unprotect mode, so that protected sectors may be unprotected
to incorporate any changes in the code. Protecting all sectors is necessary before unprotecting any
sector(s). Sector unprotection is accomplished in a PROM programmer.
START
Write Program Command Sequence
(see below)
/Data Polling Device
NO
Increment Address
Last Address
?
YES
Programming Completed
Program Command Sequence (Address/Command)
5555H/AAH
2AAAH/55H
5555H/A0H
Program Address/ Program Data
Figure 1. Internal Programming Algorithm
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Preliminary BM29F400T/BM29F400B
START
Write Erase Command Sequence
(see below)
/Data Polling or Toggle Bit
Successfully Completed
Erase Completed
Individual Sector/Multiple Sector
Erase Command Sequence
Chip Erase Command Sequence
(Address/Command)
(Address/Command)
5555H/AAH
5555H/AAH
2AAAH/55H
5555H/80H
5555H/AAH
2AAAH/55H
5555H/10H
2AAAH/55H
5555H/80H
5555H/AAH
2AAAH/55H
Sector Address/30H
Sector Address/30H
Additional sector
erase commands
are optional
Sector Address/30H
Figure 2. Internal Erase Algorithm
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Microelectronics
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Preliminary BM29F400T/BM29F400B
START
Read Byte
(DQ0-DQ7), Addr=VA
VA = Byte address for programming
= Any of the sector addresses
within the secotr being erased
during sector erase operation.
= XXXXH during Chip Erase
YES
DQ7=Data
NO
NO
DQ5=1
YES
Read Byte
(DQ0-DQ7), Addr=VA
YES
DQ7=Data
Fail
Pass
Figure 3. Data Polling Algorithm
Notes: DQ7 is rechecked even if DQ5 = logical "1" because DQ7 may change simultaneously with DQ5.
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Preliminary BM29F400T/BM29F400B
START
Read Byte(DQ0-DQ7)
Addr=Don't care
NO
DQ6=Toggle
YES
NO
DQ5=1
?
YES
Read Byte(DQ0-DQ7)
Addr=Don't care
NO
DQ6=Toggle
?
YES
Pass
Fail
Figure 4. Toggle Bit Algorithm
Note: DQ6 is rechecked even if DQ5 = logical "1" because DQ6 may stop toggling at the same time as DQ5 changing to a logical
"1".
Absolute Maximum Ratings
PARAMETER
Storage Temperature
RATING
-65 to +125
-55 to +125
UNIT
°C
Plastic Packages
Ambient Temperature
With Power Applied
°C
Voltages with Respect to Ground
All pins except A9 (Note 1)
Vcc (Note 1)
-2 to +7
-2 to +7
-2 to +14
200
V
A9 (Note 2)
Output Short Circuit Current (Note 4)
mA
Notes :
1. Minimum DC voltage on input or I/O pins is -0.5V.
During voltage transitions, inputs may overshoot Vss to -2.0V for periods of up to 20 nS. Maximum DC voltage on output and
I/O pins is Vcc +0.5V. During Voltage transitions, outputs may overshoot to Vcc + 2.0V for periods up to 20 nS.
2. Minimum DC input voltage on A9 pin is -0.5V. During voltage transitions, A9 may overshoot Vss to -2.0V for periods of up to
20 nS. Maximum DC input voltage on A9 is + 12.5V which may overshoot to 14.0V for periods of up to 20 nS.
3. No more than one output shorted at a time. Duration of the short circuit should not be greater than one second.
Operating Ranges
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Preliminary BM29F400T/BM29F400B
PARAMETER
RATING
0 to +70
UNIT
°C
Commercial (C) Devices
Industrial (I) Devices
Extended (I) Devices
Vcc Supply Voltage
-40 to +85
-55 to +125
+4.5 to 5.5
°C
°C
V
Vcc for BM29F400-90
Note: Operating ranges define those limits between which the functionality of the device is guaranteed.
*Notice: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a
stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure of the device to absolute maximum rating conditions for extended periods may
affect device reliability.
Maximum Negative Overshoot Waveform
20 nS
20 nS
+0.8 V
20 nS
-0.5 V
-2.0 V
Figure 5.
Maximum positive Overshoot Waveform
Vcc + 2.0 V
Vcc + 0.5 V
20 nS
2.0 V
20 nS
20 nS
Figure 6.
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Preliminary BM29F400T/BM29F400B
DC CHARACTERISTICS
TTL/NMOS Compatible
PARAMETER
SYM.
TEST CONDITIONS
MIN.
MAX.
UNIT
Input Load Current
ILI
ILIT
ILO
VIN = Vss to VCC,
VCC = VCC Max.
uA
±1.0
A9 Input Load Current
Output Leakage Current
VCC Active Current(1)
VCC = VCC Max.,
A9 = 12.5 V
uA
uA
±1.0
±1.0
40
VOUT = Vss to VCC,
VCC = VCC Max.
ICC1
mA
Byte
CE = VIL, OE = VIH
Word
50
60
mA
mA
VCC Active Current(2,3)
VCC Standby Current
ICC2
ICC3
CE = VIL, OE = VIH
VCC = VCC Max.,
1.0
mA
CE = RESET = VIH
VCC Standby Current
(RESET )
ICC4
VCC = VCC Max.,
RESET = VIL
1.0
mA
Input Low Level
Input High Level
Voltage for Electronic
Output Low Voltage
Output High Voltage
Notes:
VIL
VIH
-0.5
2.0
0.8
VCC +0.5
12.5
V
V
V
V
V
VID
VCC = 5.0V
11.5
VOL
VOH
IOL = 5.8 mA, VCC = VCC Min.
IOH = -2.5 mA, VCC = VCC Min.
0.45
2.4
1. The ICC current listed includes both the DC operating current and the frequency dependent component (at 6 MHz). The
frequency component typically is less than 2 mA/MHz, with OE at VIH.
2. ICC active while Internal Algorithm (program or erase) is in progress.
3. Not 100% tested.
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Preliminary BM29F400T/BM29F400B
DC Characteristics, continued
CMOS Compatible
PARAMETER
Input Load Current
SYM.
ILI
TEST CONDITIONS
MIN.
MAX.
±1.0
±1.0
±1.0
40
UNIT
uA
VIN = VSS to VCC, VCC = VCC Max.
VCC = VCC Max., A9 = 12.5 V
VOUT = VSS to VCC, VCC = VCC Max.
A9 Input Load Current
Output Leakage Current
ILIT
uA
ILO
uA
(1)
VCC Active Current
ICC1
mA
Byte
= VIL,
= VIH
CE
OE
Word
50
60
mA
mA
(2,3)
VCC Active Current
ICC2
ICC3
CE = VIL,
= VIH
OE
VCC Standby Current
100
uA
VCC = VCC Max.,
= VCC ±0.5V,
CE
RESET = VCC ±0.5V
Vcc Standby Current
VCC = VCC Max.,
ICC4
100
0.8
uA
(
)
= VSS ±0.5V
RESET
RESET
Input Low Level
Input High Level
VIL
-0.5
V
V
V
VIH
0.7 x VCC VCC + 0.3
Voltage for Electronic ID
and Sector Protect
VCC = 5.0 V
VID
11.5
12.5
Output Low Voltage
Output High Voltage
VOL
VOH1
VOH2
IOL = 5.8 mA, VCC = VCC Min.
IOH = -2.5 mA, VCC = VCC Min.
IOH = -100 mA, VCC = VCC Min.
0.45
V
V
0.85 x VIH
VCC -0.4
3.2
V
Low VCC Lock-out Voltage
Notes:
VLKO
4.2
V
1.The ICC current listed includes both the DC operating current and the frequency dependent component (at 6 Mhz). The frequency
component typically is less than 2 mA/MHz, with OE at VIH.
2. ICC active while Internal Algorithm (program or erase) is in progress.
3. Not 100% tested.
A Winbond Company
Publication Release Date: May 1999
Revision A1
- 23 -
BRIGHT
Microelectronics
Inc.
Preliminary BM29F400T/BM29F400B
AC CHARACTERISTICS
Read-Only Operations
DESCRIPTION
-90
-120 -150 UNIT
PARAMETER SYM.
TEST SETUP
JEDEC
Standard
(2)
Read Cycle Time
Min.
90
90
120
120
150
150
nS
nS
t
t
t
t
AVAV
AVQV
RC
Address to Output Delay
Max.
ACC
CE = VIL
= VIL
OE
Chip Enable to Output Delay
Max.
Max.
90
35
120
50
150
55
nS
nS
t
t
t
t
ELQV
GLQV
CE
OE
= VIL
OE
Output Enable to Output
Delay
Chip Enable to Output High
Z(3,4)
Max.
20
20
0
30
30
0
35
35
0
nS
nS
nS
t
t
t
t
t
t
EHQZ
GHQZ
AXQX
HZ
DF
OH
Output Enable to Output High
Z(2,3)
Output Hold Time from
Min.
Addresses,
or
,
OE
CE
Whichever Occurs First
t
Max.
Max.
20
5
20
5
20
5
mS
nS
READY
Pin Low to Read
RESET
(4)
Mode
t
t
ELFL
ELFH
CE to BYTE Switching
Low or High
Notes:
1. Test Conditions: Output Load: 1 TTL gate and 100 pF
Input rise and fall times: 20 nS; Input pulse levels: 0.45 V to 2.4 V
2. Timing measurement reference level
Input: 0.8 and 2.0 V; Output: 0.8 and 2.0 V
3. Output driver disable time.
4. Not 100% tested.
5.0 V
2.7 KOhm
IN3064 or
Equivalent
DEVICE
UNDER
TEST
CL
6.2 KOhm
Diodes = IN3064
or Equivalent
Figure 7. Test Condition
Note: CL = 100 pF including jig capacitance.
- 24 -
BRIGHT
Microelectronics
Inc.
Preliminary BM29F400T/BM29F400B
AC CHARACTERISTICS
Programming/Erase Operations
PARAMETER
SYM.
DESCRIPTION
-90
-120
-150
UNIT
JEDEC
Standard
(1)
t
t
Write Cycle Time
Min.
Min.
Min.
Min.
Min.
Min.
Min.
Min.
90
0
120
0
150
0
nS
nS
nS
nS
nS
nS
nS
nS
AVAV
WC
t
t
t
Address Setup Time
Address Hold Time
Data Setup Time
AVWL
WLAX
AS
AH
DS
DH
t
t
45
45
0
50
50
0
50
50
0
t
DVWH
WHDX
t
t
Data Hold Time
t
Output Enable Setup Time
0
0
0
OES
OEH
(1)
Read
t
Output Enable
Hold Time
0
0
0
10
10
10
(1)
Polling
Toggle &
Data
t
t
t
Read Recover Time Before Write
CE Setup Time
Min.
Min.
0
0
0
0
0
0
nS
nS
GHWL
GHWL
t
t
ELWL
CS
t
Min.
0
0
0
nS
WHEH
CH
CE Hold Time
t
t
t
Write Pulse Width
Min.
Min.
45
20
50
20
50
20
nS
nS
WLWH
WP
t
Write Pulse Width High
Byte Programming Operation
WHWL
WPH
t
t
t
t
t
t
Typ.
Max.
16
400
16
400
16
400
uS
uS
WHWH1
WHWH2
WHWH3
WHWH1
WHWH2
WHWH3
(2)
Sector Erase Operation
Typ. Max.
0.26
12
0.26
12
0.26
12
sec
(2)
Chip Erase Operation
(1)
Typ.
Max.
2.0
90
2.0
90
2.0
90
sec
t
Vcc Setup Time
Min.
Min.
Min.
50
500
4
50
500
4
50
500
4
mS
nS
VCS
(1,3)
Rise Time to VID
t
VIDR
t
mS
OESP
(1, 3, 4)
OE Setup Time to WE Active
t
Min.
Min.
500
4
500
4
500
4
nS
uS
RP
RESET Pulse Width
t
RSP
( 3)
RESET Setup Time
(1)
t
Programming/Erase Valid to RY/BY Delay
Min.
Min.
Min.
Min.
Min.
40
4
50
4
60
4
nS
mS
mS
mS
nS
BUSY
(1, 4)
t
Voltage Transition Time
Sector Protect Write Pulse Width
Sector Unprotect Write Pulse Width
VLHT
(4)
(4)
t
t
100
350
4
100
350
4
100
350
4
WPP1
WPP2
t
CSP
(1, 4)
CE Setup Time to WE Active
Notes:
1. Not 100% tested.
2. Does not include pre-programming time.
3. This timing is for Temporary Sector Unprotect operation.
These timings are for Sector Protect and/or Sector Unprotect operations.
A Winbond Company
- 25 -
Publication Release Date: May 1999
Revision A1
BRIGHT
Microelectronics
Inc.
Preliminary BM29F400T/BM29F400B
SWITCHING WAVEFORMS
WAVEFORM
INPUT
OUTPUT
Must Be Steady
Will Be Steady
Will Be Change
from H to L
May Change
from H to L
May Change
from L to H
Will Be Change
from L to H
Don't Care,
Any Change
Permitted
Change,
State Unknown
Center Line is
High impedance
Off State
Does Not
Apply
RC
t
Address Stable
Address
ACC
t
CE
HZ
t
OE
t
OE
DF
t
OEH
t
OH
t
CE
t
WE
High Z
High Z
Output Vaild
Outputs
Figure 8. AC Waveforms for Read Operations
- 26 -
BRIGHT
Microelectronics
Inc.
Preliminary BM29F400T/BM29F400B
Switching Waveforms, continued
/Data Polling
PA
5555H
Address
CE
PA
AH
t
WC
t
AS
t
GHWL
t
OE
WP
t
WHWH1
t
WPH
t
WE
tCS
DH
t
A0H
OUT
D
DQ7
PD
Data
DS
t
5.0V
VCC
GND
Figure 9. AC Waveforms Program Operations
Notes:
1. PA is address of the memory location to be programmed.
2. PD is data to be programmed at BYTE address.
3. /DQ7 is the output of the complement of the data written to the device.
4. DOUT is the output of the data written to the device.
5. Figure indicates last two bus cycles of four bus cycle sequence.
6. These waveforms are for 16-bit mode.
AS
t
AH
t
Address
CE
5555H
2AAAH
5555H
SA
5555H
2AAAH
GHWL
t
OE
WP
t
WE
WPH
t
CS
DH
t
t
10H/30H
Data
5.0V
80H
55H
AAH
55H
AAH
DS
t
VCS
t
V
GND
CC
Figure 10. AC Waveforms Chip/Sector Erase Operations
Notes:
1. SA is the sector address for Sector Erase. Address = X = Don't Care for Chip Erase.
2. These waveforms are for 16-bit mode.
A Winbond Company
- 27 -
Publication Release Date: May 1999
Revision A1
BRIGHT
Microelectronics
Inc.
Preliminary BM29F400T/BM29F400B
Switching Waveforms, continued
CH
t
CE
OE
DF
OE
t
t
OEH
t
WE
CE
t
OH
t
DQ7
DQ7
DQ7=Valid Data
WHWH
1 or 2
t
Data
High
Z
DQ0-DQ7
Valid Data
DQ0-DQ6
DQ0-DQ6=Invalid
OE
t
5.0V
CC
V
GND
Figure 11. AC Waveforms for
Polling during Internal Algorithm Operations
Data
Note: DQ7 = Valid Data (The device has completed the internal program or erase operation.)
CE
OEH
t
OE
OES
t
WE
DQ6=
Stop Toggling
Data
(DQ0-DQ7)
DQ0-DQ7
Valid
DQ6=Toggle
DQ6=Toggle
Data
OE
t
5.0V
CC
V
GND
Figure 12 AC Waveforms for Toggle Bit during Internal Algorithm Operation
Note: DQ6 stops toggling (The device has completed the internal program or erase operation.)
- 28 -
BRIGHT
Microelectronics
Inc.
Preliminary BM29F400T/BM29F400B
Switching Waveforms, continued
CE
The rising edge of the last WE signal
WE
Entire programming
or erase operations
BY/RY
tBUSY
5.0V
Vcc
GND
Figure 13. RY/BY Timing Diagram During Program/Erase Operation
RY/BY
RESET
PWH
t
RP
Ready
Vaild Data
Data
5.0V
Vcc
GND
Figure 14. /RESET Timing Diagram
A Winbond Company
Publication Release Date: May 1999
Revision A1
- 29 -
BRIGHT
Microelectronics
Inc.
Preliminary BM29F400T/BM29F400B
Switching Waveforms, continued
WC
t
Address Stable
Address
CE
AVFL
t
ELFL
t
DF
t
OE
OE
t
BYTE
CE
t
OH
t
Data
High Z
High Z
High Z
Data Output
on DQ0-DQ7
Data Output
on DQ0-DQ7
(DQ0-DQ7)
ACC
t
Data
(DQ8-DQ14)
Data
Outputon
DQ8-DQ14
ACC
t
FLQZ
t
Data
Outputon
DQ15
High Z
Address
Input
DQ15/A-1
Figure 15. BYTE Timing Diagram for Read Operation
CE
The falling edge of the last WE signal
WE
BYTE
tSET
(
)
tHOLD
tAH
tAS
(
)
Figure 16. BYTE Timing Diagram for Write Operation
- 30 -
BRIGHT
Microelectronics
Inc.
Preliminary BM29F400T/BM29F400B
Start
RESET = VID
(Note 1)
Perform Erase or
Program Operations
RESET = VIH
Temporary Sector
Unprotect Completed
(Note 2)
Figure 17. Temporary Sector Unprotect Algorithm
Notes:
1. All protected sector groups unprotected.
2. All previously protected sector groups are protected again.
12V
5V
RESET
tVIDR
CE
WE
tRSP
Program or Erase Command Sequence
RY/BY
Figure 18. Temporary Unprotect Timing Diagram
A Winbond Company
Publication Release Date: May 1999
Revision A1
- 31 -
BRIGHT
Microelectronics
Inc.
Preliminary BM29F400T/BM29F400B
AC CHARACTERISTICS
Programming/Erase Operations
PARAMETER
JEDEC
SYM.
DESCRIPTION
Standard
-90
90
0
-120
120
0
-150
150
0
Unit
nS
nS
nS
nS
nS
nS
nS
nS
(1)
Write Cycle Time
t
t
t
t
t
t
Min.
Min.
Min.
Min.
Min.
Min.
Min.
Min.
AVAV
AVEL
ELAX
DVEH
EHDX
WC
t
t
t
Address Setup Time
Address Hold Time
Data Setup Time
AS
AH
DS
45
45
0
50
50
0
50
50
0
t
Data Hold Time
DH
(1)
t
t
Output Enable Setup Time
0
0
0
OES
OEH
(1)
Read
Output Enable
Hold Time
0
0
0
10
10
10
(1)
Polling
Toggle and
Data
t
t
t
Read Recover Time Before Write
WE Setup Time
Min.
Min.
0
0
0
0
0
0
nS
nS
GHWL
GHWL
t
WLEL
WS
t
t
t
t
t
t
t
t
Min.
Min.
Min.
0
0
0
nS
nS
nS
EHWH
WH
WE Hold Time
45
20
50
20
50
20
ELEH
CP
Pulse Width
CE
CE
EHEL
CPH
WHWH1
Pulse Width High
Byte Programming Operation
Typ.
Max.
Typ.
Max.
Typ.
Max.
Min.
Min.
Min.
Min.
Min.
Min.
16
400
0.26
12
16
400
0.26
12
16
400
0.26
12
mS
mS
sec
sec
sec
sec
mS
nS
WHWH1
(2)
Sector Erase Operation
t
t
t
WHWH2
WHWH3
WHWH2
WHWH3
(2)
Chip Erase Operation
t
2.0
90
2.0
90
2.0
90
(1,3)
Vcc Setup Time
t
t
t
t
t
t
50
50
50
VCS
Rise Time to VID(1,3)
500
4
500
4
500
4
VIDR
VLHT
WPP1
WPP2
OESP
(1,3)
Voltage Transition Time
mS
mS
mS
mS
(4)
Sector Protect Write Pulse Width
100
10
100
10
100
10
(4)
Sector Unprotect Write Pulse Width
4
4
4
(1, 3)
OE Setup Time to WE Active
OE Setup Time to WE Active
t
Min.
4
4
4
nS
CSP
(1, 4)
Notes:
1. Not 100% tested.
2. Does not include pre-programming time.
3. This timing is for Sector Unprotect operation.
4. Output Driver Disable Time.
- 32 -
BRIGHT
Microelectronics
Inc.
Preliminary BM29F400T/BM29F400B
Switching Waveforms, continued
Data Polling
PA
PA
5555H
Address
CE
t
WC
t
AH
t
AS
t
GHWL
OE
WP
t
t
WHWH1
WE
t
WPH
CS
t
t
D
OUT
Data
A0H
PD
DQ7
D
DS
t
5.0V
Vcc
GND
Figure 19. Alternate
Controlled Program Operation Timings
CE
Notes:
1. PA is address of the memory location to be programmed.
2. PD is data to be programmed at BYTE address.
3. /DQ7 is the output of the complement of the data written to the device.
4. D is the output of the data written to the device.
OUT
5. Figure indicates last two bus cycles of four bus cycle sequence.
6. These waveforms are for the x16 mode.
A Winbond Company
Publication Release Date: May 1999
Revision A1
- 33 -
BRIGHT
Microelectronics
Inc.
Preliminary BM29F400T/BM29F400B
Erase and Programming Performance
PARAMETER
MIN.
LIMITS
TYP.
0.33
2.4
MAX.
15
UNIT
sec
Sector Erase Time
Chip Erase Time
Byte Programming Time
Chip Programming Time
120
400
200
sec
16
us
8
sec
Erase/Program Cycles
10,000
100,000
cycles
Latch Up Characteristics
PARAMETER
MIN.
MAX.
Input Voltage with respect to Vss on all I/O
pins
-1.0V
Vcc + 1.0V
Vcc Current
-100 mA
+ 100 mA
Note: Includes all pins except Vcc. Test conditions: Vcc = 5.0V, one pin at a time.
CAPACITANCE
TSOP Pin
PARAMETER
Input Capacitance
SYMBOL
CIN
TEST SETUP
VIN = 0
TYP.
MAX.
UNIT
6
8.5
8
7.5
12
10
pF
pF
pF
Output Capacitance
Control Pin Capacitance
VOUT = 0
VIN = 0
COUT
CIN2
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°, f = 1.0 MHz.
SOP Pin
PARAMETER
Input Capacitance
SYMBOL
CIN
TEST SETUP
VIN = 0
TYP.
6
MAX.
7.5
12
UNIT
pF
Output Capacitance
Control Pin Capacitance
COUT
CIN2
VOUT = 0
VIN = 0
8.5
8
pF
10
pF
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°, f = 1.0 MHz.
Data Retention
PARAMETER
TEST CONDITIONS
MIN.
10
UNIT
Minimum Pattern Data Retention Time
Minimum Pattern Data Retention Time
Years
Years
150°
125°
20
- 34 -
BRIGHT
Microelectronics
Inc.
Preliminary BM29F400T/BM29F400B
ORDERING INFORMATION
PART NO.
ACCESS
TIME
POWER
SUPPLY
CURRENT
MAX. (mA)
BOOT PACKAGE CYCLING
TEMPERATURE
RANGE
BLOCK
(MIN.)
(nS)
29F400T-90PC
29F400T-12PC
29F400T-90TC
29F400T-12TC
29F400B-90PC
29F400B-12PC
29F400B-90TC
29F400B-12TC
29F400T-90PI
29F400T-12PI
29F400T-90TI
29F400T-12TI
29F400B-90PI
29F400B-12PI
29F400B-90TI
29F400B-12TI
90
120
90
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
Top
Top
44SOP
44SOP
48TSOP
48TSOP
44SOP
44SOP
48TSOP
48TSOP
44SOP
44SOP
48TSOP
48TSOP
44SOP
44SOP
48TSOP
48TSOP
10,000
10,000
10,000
10,000
10,000
10,000
10,000
10,000
10,000
10,000
10,000
10,000
10,000
10,000
10,000
10,000
0°C - 70°C
0°C - 70°C
0°C - 70°C
Top
0°C - 70°C
120
90
Top
0°C - 70°C
Bottom
Bottom
Bottom
Bottom
Top
0°C - 70°C
120
90
0°C - 70°C
0°C - 70°C
120
90
-40°C - 85°C
-40°C - 85°C
-40°C - 85°C
-40°C - 85°C
-40°C - 85°C
-40°C - 85°C
-40°C - 85°C
-40°C - 85°C
120
90
Top
Top
120
90
Top
Bottom
Bottom
Bottom
Bottom
120
90
120
Notes:
1. Winbond reserves the right to make changes to its products without prior notice.
2. Purchasers are responsible for performing appropriate quality assurance testing on products intended for use in
applications where personal injury might occur as a consequence of product failure.
3. Typical Program/Erase Cycle is 100,000.
A Winbond Company
Publication Release Date: May 1999
Revision A1
- 35 -
BRIGHT
Microelectronics
Inc.
Preliminary BM29F400T/BM29F400B
APPENDIX A:
Compatibility to AMD's AMD29F400B:
The device is essentially fully functional compatible to the AMD29F400B except for three issues:
1. During Erase Suspend
2. DQ2 Status Flag
3. Command Address Subset
During Erase Suspend, the device can only read data in the memory-- not Program or execute an
Auto Command like the AMD29400B. Also, the DQ2 Flag is not available. This flag is used to
determine during multiple or single sector erase whether a sector has been selected for erase. DQ2
can only be used during and embedded sector erase operation or during erase suspend.
In the AMD device, commands do not require address pin A15, A14, A13, A12, A11 to be forced
during the command sequence. This makes their device slighly easier to inadvertently create a
command and cause a program, erase or malfunction. The advantage of reducing the address to a
subset is to simplify the hardware interface in systems where control signals are limited in number.
The 29F400B reduces the interface requirement by 4 signals. However if the full address is supplied
(i.e.2AAAH and 5555H) by the host system, there will be no incompatibility using either device.
- 36 -
BRIGHT
Microelectronics
Inc.
Preliminary BM29F400T/BM29F400B
PACKAGE DIMENSIONS
PSOP44
44-pin Small Outline Package (measured in millimeters)
23
44
0.10
0.21
.060
1.00
15.70
16.30
13.10
13.50
1
22
1.27 NOM.
0
8
28.00
28.40
2.17
2.45
2.80
MAX.
Seating Plane
0.10
0.35
0.35
0.50
TSOP48
48-Pin Standard Thin Small Outline Package (measured in millimeters)
0.95
1.05
Pin 1 I.D.
1
48
11.90
12.10
0.50 BSC
24
25
0.05
0.15
18.30
18.50
19.80
20.20
0.08
0.20
0.10
0.21
1.20
MAX
0
5
0.25MM(0.0098)BSC
.050
.070
A Winbond Company
Publication Release Date: May 1999
Revision A1
- 37 -
BRIGHT
Microelectronics
Inc.
Preliminary BM29F400T/BM29F400B
VERSION HISTORY
VERSION
DATE
May. 1999
PAGE
DESCRIPTION
A1
-
Initial Issued
Winbond Electronics (H.K.) Ltd.
Headquarters
Winbond Electronics Corporation America
2727 N. First Street, San Jose,
CA 95134, U.S.A.
TEL: 408-9436666
FAX: 408-5441798
Rm. 803, World Trade Square, Tower II,
123 Hoi Bun Rd., Kwun Tong,
Kowloon, Hong Kong
TEL: 852-27513100
FAX: 852-27552064
No. 4, Creation Rd. III,
Science-Based Industrial Park,
Hsinchu, Taiwan
TEL: 886-3-5770066
FAX: 886-3-5796096
http://www.winbond.com.tw/
Voice & Fax-on-demand: 886-2-27197006
Taipei Office
11F, No. 115, Sec. 3, Min-Sheng East Rd.,
Taipei, Taiwan
TEL: 886-2-27190505
FAX: 886-2-27197502
Note: All data and specifications are subject to change without notice.
- 38 -
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29F400C-55 | Macronix | 4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 5V ONLY BOOT SECTOR FLASH MEMORY | 获取价格 | |
29F400C-70 | Macronix | 4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 5V ONLY BOOT SECTOR FLASH MEMORY | 获取价格 | |
29F400C-90 | Macronix | 4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 5V ONLY BOOT SECTOR FLASH MEMORY | 获取价格 | |
29F400T-12PC | ETC | 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY | 获取价格 | |
29F400T-12PI | WINBOND | Flash, 512KX8, 120ns, PDSO44, PLASTIC, SOP-44 | 获取价格 | |
29F400T-12TC | ETC | 4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY | 获取价格 | |
29F400T-12TI | WINBOND | Flash, 512KX8, 120ns, PDSO48, TSOP-48 | 获取价格 |
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