ZX3CD2S1M832TA
更新时间：2024-10-08 01:49:41
品牌：ZETEX
描述：MPPS?? Miniature Package Power Solutions 20V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL
概述
规格参数
数据手册ZX3CD2S1M832TA 概述
MPPS?? Miniature Package Power Solutions 20V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL MPPS ？微型封装电源解决方案20V PNP低饱和晶体管和40V ， 1A肖特基二极管的组合DUAL 小信号双极晶体管
ZX3CD2S1M832TA 规格参数
| 是否Rohs认证： | 符合 | 生命周期： | Transferred |
| 包装说明： | 3 X 2 MM, MLP832, 10 PIN | Reach Compliance Code： | unknown |
| ECCN代码： | EAR99 | 风险等级： | 5.36 |
| Is Samacsys： | N | 外壳连接： | COLLECTOR |
| 最大集电极电流 (IC)： | 3.5 A | 集电极-发射极最大电压： | 20 V |
| 配置： | SINGLE WITH BUILT-IN DIODE | 最小直流电流增益 (hFE)： | 15 |
| JESD-30 代码： | R-PQFP-F10 | JESD-609代码： | e3 |
| 湿度敏感等级： | 1 | 元件数量： | 1 |
| 端子数量： | 10 | 最高工作温度： | 150 °C |
| 封装主体材料： | PLASTIC/EPOXY | 封装形状： | RECTANGULAR |
| 封装形式： | FLATPACK | 峰值回流温度（摄氏度）： | 260 |
| 极性/信道类型： | PNP | 最大功率耗散 (Abs)： | 3 W |
| 认证状态： | Not Qualified | 子类别： | Other Transistors |
| 表面贴装： | YES | 端子面层： | Matte Tin (Sn) |
| 端子形式： | FLAT | 端子位置： | QUAD |
| 处于峰值回流温度下的最长时间： | 40 | 晶体管应用： | SWITCHING |
| 晶体管元件材料： | SILICON | 标称过渡频率 (fT)： | 180 MHz |
| Base Number Matches： | 1 |
ZX3CD2S1M832TA 数据手册
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PDF下载ZX3CD2S1M832
MPPS™ Miniature Package Power Solutions
20V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY
DIODE COMBINATION DUAL
SUMMARY
PNP Transistor
V
=-20V; R
= 64m ;
= -3.5A
C
CEO
SAT
Schottky Diode
V = 40V; V = 500mV (@1A); I =1A
R
F
C
DESCRIPTION
Packaged in the new innovative 3mm x 2mm MLP this combination dual
comprises an ultra low saturation PNP transistor and a 1A Schottky barrier
diode. This excellent combination provides users with highly efficient
performance in applications including DC-DC and charging circuits.
Users will also gain several other key benefits:
Performance capability equivalent to much larger packages
3mm x 2mm Dual Die MLP
Improved circuit efficiency & power levels
PCB area and device placement savings
Lower package height (0.9mm nom)
Reduced component count
Cathode
C
FEATURES
B
•
•
•
Extremely Low Saturation Voltage (-220mV @-1A)
H
characterised up to -6A
FE
I
= -3.5A Continuous Collector Current
E
C
Anode
•
•
Extremely Low V , fast switching Schottky
F
3mm x 2mm MLP
APPLICATIONS
•
•
•
•
DC - DC Converters
Mobile Phones
Charging Circuits
Motor control
PINOUT
ORDERING INFORMATION
DEVICE
REEL
TAPE
WIDTH
QUANTITY
PER REEL
ZX3CD2S1M832TA
7
8mm
8mm
3000
3mm x 2mm Dual MLP
underside view
ZX3CD2S1M832TC 13
10000
DEVICE MARKING
2S1
ISSUE 1 - JUNE 2002
1
ZX3CD2S1M832
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Transistor
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current (a)(f)
Base Current
V
V
V
-25
-20
V
V
CBO
CEO
EBO
-7.5
-6
V
I
I
I
A
CM
-3.5
1000
A
C
B
mA
Power Dissipation at TA=25°C (a)(f)
Linear Derating Factor
P
P
P
P
P
P
1.5
12
W
D
D
D
D
D
D
mW/°C
Power Dissipation at TA=25°C (b)(f)
Linear Derating Factor
2.45
19.6
W
mW/°C
Power Dissipation at TA=25°C (c)(f)
Linear Derating Factor
1
8
W
mW/°C
Power Dissipation at TA=25°C (d)(f)
Linear Derating Factor
1.13
9
W
mW/°C
Power Dissipation at TA=25°C (d)(g)
Linear Derating Factor
1.7
13.6
W
mW/°C
Power Dissipation at TA=25°C (e)(g)
Linear Derating Factor
3
24
W
mW/°C
Storage Temperature Range
Junction Temperature
T
T
-55 to +150
150
°C
°C
stg
j
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
83
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Junction to Ambient (a)(f)
Junction to Ambient (b)(f)
Junction to Ambient (c)(f)
Junction to Ambient (d)(f)
Junction to Ambient (d)(g)
Junction to Ambient (e)(g)
Notes
R
R
R
R
R
R
θJA
θJA
θJA
θJA
θJA
θJA
51
125
111
73.5
41.7
(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The
copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed
pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(f) For a dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the
package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm
wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 500mW.
ISSUE 1 - JUNE 2002
2
ZX3CD2S1M832
TRANSISTOR TYPICAL CHARACTERISTICS
10
1
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
CE(SAT)
T
amb=25°C
2oz Cu
Limited
Note (e)(g)
2oz Cu
Note (a)(f)
DC
1s
100ms
10ms
1oz Cu
Note (d)(g)
0.1
1ms
Note (a)(f)
100us
1oz Cu
0.01
Single Pulse, Tamb=25°C
1
Note (d)(f)
0.1
10
0
25
50
75
100 125 150
V Collector-Emitter Voltage (V)
Temperature (°C)
CE
Derating Curve
Safe Operating Area
225
200
175
150
125
100
75
Note (a)(f)
80
60
40
20
0
1oz copper
Note (f)
1oz copper
Note (g)
D=0.5
2oz copper
Note (f)
Single Pulse
D=0.05
D=0.1
D=0.2
50
2oz copper
Note (g)
25
0
100µ 1m 10m 100m
1
10 100 1k
0.1
1
10
100
Pulse Width (s)
BoardCuArea(sqcm)
Transient Thermal Impedance
Thermal Resistance v Board Area
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2oz copper
Note (g)
T
T
amb=25°C
jmax=150°C
Continuous
2oz copper
Note (f)
1oz copper
Note (g)
1oz copper
Note (f)
0.1
1
10
100
BoardCuArea(sqcm)
Power Dissipation v Board Area
ISSUE 1 - JUNE 2002
3
ZX3CD2S1M832
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Schottky Diode
Continuous Reverse Voltage
V
V
40
425
1850
3
V
A
R
F
Forward Voltage @ I =1000mA(typ)
F
Forward Current
I
I
I
mA
A
F
Average Peak Forward Current D=50%
FAV
12
7
A
A
Non Repetitive Forward Current t≤ 100s
t≤ 10ms
FSM
Power Dissipation at TA=25°C (a)(f)
Linear Derating Factor
P
P
P
P
P
P
1.2
12
W
D
D
D
D
D
D
mW/°C
Power Dissipation at TA=25°C (b)(f)
Linear Derating Factor
2
20
W
mW/°C
Power Dissipation at TA=25°C (c)(f)
Linear Derating Factor
0.8
8
W
mW/°C
Power Dissipation at TA=25°C (d)(f)
Linear Derating Factor
0.9
9
W
mW/°C
Power Dissipation at TA=25°C (d)(g)
Linear Derating Factor
1.36
13.6
W
mW/°C
Power Dissipation at TA=25°C (e)(g)
Linear Derating Factor
2.4
24
W
mW/°C
Storage Temperature Range
Junction Temperature
T
T
-55 to +150
125
°C
°C
stg
j
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
83
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Junction to Ambient (a)(f)
Junction to Ambient (b)(f)
Junction to Ambient (c)(f)
Junction to Ambient (d)(f)
Junction to Ambient (d)(g)
Junction to Ambient (e)(g)
Notes
R
R
R
R
R
R
θJA
θJA
θJA
θJA
θJA
θJA
51
125
111
73.5
41.7
(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The
copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed
pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(f) For a dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the
package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm
wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 400mW.
ISSUE 1 - JUNE 2002
4
ZX3CD2S1M832
SCHOTTKY TYPICAL CHARACTERISTICS
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Tamb=25°C
Note (a)(f)
80
60
40
20
0
2oz Cu
Note (e)(g)
2oz Cu
Note (a)(f)
D=0.5
D=0.2
1oz Cu
Note (d)(g)
Single Pulse
D=0.05
D=0.1
1oz Cu
Note (d)(f)
100µ 1m 10m 100m
1
10 100 1k
0
25
50
75
100
125
Pulse Width (s)
Transient Thermal Impedance
Temperature (°C)
Derating Curve
3.0
2.5
2.0
1.5
1.0
0.5
0.0
225
200
175
150
125
100
75
2oz copper
Note (g)
Tamb=25°C
jmax=125°C
Continuous
1oz copper
Note (f)
T
1oz copper
Note (g)
2oz copper
Note (f)
2oz copper
Note (f)
1oz copper
Note (g)
50
1oz copper
Note (f)
2oz copper
Note (g)
25
0
0.1
1
10
100
0.1
1
10
100
Board Cu Area (sqcm)
BoardCuArea(sqcm)
Power Dissipation v Board Area
Thermal Resistance v Board Area
ISSUE 1 - JUNE 2002
5
ZX3CD2S1M832
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT
CONDITIONS.
TRANSISTOR ELECTRICAL CHARACTERISTICS
Collector-Base Breakdown
Voltage
V
V
V
-25
-20
-35
-25
V
V
V
I =-100A
C
(BR)CBO
(BR)CEO
Collector-Emitter Breakdown
Voltage
I =-10mA*
C
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
-7.5
-8.5
I =-100A
E
(BR)EBO
CBO
I
I
I
-25
-25
-25
nA
nA
nA
V
V
V
=-20V
=-6V
CB
Emitter Cut-Off Current
EBO
EB
Collector Emitter Cut-Off Current
=-16V
CES
CES
Collector-Emitter Saturation
Voltage
V
-19
-30
mV
mV
mV
mV
mV
I =-0.1A, I =-10mA*
C B
CE(sat)
-170
-190
-240
-225
-220
-250
-350
-300
I =-1A, I =-20mA*
C B
I =-1.5A, I =-50mA*
C
B
I =-2.5A, I =-150mA*
C
B
I =-3.5A, I =-300mA*
C
B
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
V
V
h
-1.10
-0.87
-1.075
-0.950
V
V
I =-3.5A, I =-350mA*
C B
BE(sat)
BE(on)
FE
I =-3.5A, V =-2V*
C
CE
Static Forward Current Transfer
Ratio
300
300
150
15
475
450
230
30
I =-10mA, V =-2V*
C CE
I =-0.1A, V =-2V*
C
C
CE
CE
CE
I =-2A, V =-2V*
I =-6A, V =-2V*
C
Transition Frequency
f
150
180
MHz I =-50mA, V =-10V
T
C
CE
f=100MHz
Output Capacitance
Turn-On Time
C
21
40
30
pF
ns
ns
V
=-10V, f=1MHz
obo
(on)
(off)
CB
t
t
V
=-10V, I =-1A
C
=I =-50mA
CC
I
B1 B2
Turn-Off Time
670
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS
Reverse Breakdown Voltage
Forward Voltage
V
V
40
60
V
I =300A
R
(BR)R
F
240
265
305
355
390
425
495
420
270
290
340
400
450
500
600
—
mV
mV
mV
mV
mV
mV
mV
mV
I =50mA*
F
I =100mA*
F
I =250mA*
F
I =500mA*
F
I =750mA*
F
I =1000mA*
F
I =1500mA*
F
I =1000mA,T =100°C*
F
a
Reverse Current
I
50
25
12
100
A
pF
ns
V =30V
R
R
Diode Capacitance
C
f=1MHz,V =25V
R
D
Reverse Recovery
Time
t
switched from
rr
I = 500mA to I = 500mA
F
R
R
Measured at I = 50mA
*Measured under pulsed conditions.
ISSUE 1 - JUNE 2002
6
ZX3CD2S1M832
TRANSISTOR TYPICAL CHARACTERISTICS
1
100m
10m
0.25
0.20
0.15
0.10
0.05
0.00
IC/IB=50
Tamb=25°C
100°C
25°C
IC/IB=100
IC/IB=50
IC/IB=10
-55°C
1m
100m
10
1m
100m
10
IC10mCollector Current 1(A)
IC10mCollector Current 1(A)
VCE(SAT) vIC
VCE(SAT) vIC
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
630
540
450
360
270
180
90
V =2V
IC/IB=50
CE
1.0
0.8
0.6
0.4
100°C
25°C
-55°C
25°C
-55°C
100°C
100m
0
1m
10m
100m
1
10
1m
10
IC10mCollector Current 1(A)
IC Collector Current (A)
h vIC
VBE(SAT) vIC
FE
V =2V
1.0
0.8
0.6
0.4
0.2
CE
-55°C
25°C
100°C
IC10mCollector Current 1(A)
1m
100m
10
VBE(ON) vIC
ISSUE 1 - JUNE 2002
7
ZX3CD2S1M832
SCHOTTKY TYPICAL CHARACTERISTICS
ISSUE 1 - JUNE 2002
8
ZX3CD2S1M832
MLP832 PACKAGE OUTLINE (3mm x 2mm Micro Leaded Package)
CONTROLLING DIMENSIONS IN MILLIMETRES
APPROX. CONVERTED DIMENSIONS IN INCHES
MLP832 PACKAGE DIMENSIONS
MILLIMETRES
INCHES
MILLIMETRES
MIN. MAX.
0.65 REF
2.00 BSC
INCHES
MIN. MAX.
DIM
DIM
MIN.
0.80
0.00
0.65
0.15
0.24
0.17
MAX.
1.00
0.05
0.75
0.25
0.34
0.30
MIN.
MAX.
0.039
A
0.031
0.00
e
E
0.0256 BSC
0.0787 BSC
A1
A2
A3
b
0.002
0.0255
0.006
0.009
0.0066
0.0295
0.0098
0.013
E2
E4
L
0.43
0.63
0.36
0.017
0.0249
0.014
0.16
0.20
0.006
0.0078
0.00
0.45
0.0157
0.005
b1
D
0.0118
L2
r
0.125
3.00 BSC
0.118 BSC
0.075 BSC
0.0029 BSC
D2
D3
0.82
1.01
1.02
1.21
0.032
0.040
⍜
0Њ
12Њ
0Њ
12Њ
0.0397
0.0476
© Zetex plc 2002
Europe
Americas
Asia Pacific
Zetex (Asia) Ltd
Zetex plc
Zetex GmbH
Zetex Inc
Fields New Road
Chadderton
Oldham, OL9 8NP
United Kingdom
Telephone (44) 161 622 4422
Fax: (44) 161 622 4420
uksales@zetex.com
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Kwai Fong
Germany
USA
Hong Kong
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Telephone: (631) 360 2222
Fax: (631) 360 8222
usa.sales@zetex.com
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
ISSUE 1 - JUNE 2002
9
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| ZX3CDBS1M832TC | ZETEX | MPPS⑩ Miniature Package Power Solutions 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL | 获取价格 |
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| ZX3V0 | YEASHIN | 500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators | 获取价格 |
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| ZX3V3 | YEASHIN | 500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators | 获取价格 |
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