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ZX3CD2S1M832TA

更新时间：2025-07-04 01:49:41
品牌：ZETEX
描述：MPPS?? Miniature Package Power Solutions 20V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL

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ZX3CD2S1M832TA 概述

MPPS?? Miniature Package Power Solutions 20V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL MPPS ？微型封装电源解决方案20V PNP低饱和晶体管和40V ， 1A肖特基二极管的组合DUAL 小信号双极晶体管

ZX3CD2S1M832TA 规格参数

是否Rohs认证： 符合生命周期：Transferred
包装说明：3 X 2 MM, MLP832, 10 PINReach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.36
Is Samacsys：N外壳连接：COLLECTOR
最大集电极电流 (IC)：3.5 A集电极-发射极最大电压：20 V
配置：SINGLE WITH BUILT-IN DIODE最小直流电流增益 (hFE)：15
JESD-30 代码：R-PQFP-F10JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：10最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLATPACK峰值回流温度（摄氏度）：260
极性/信道类型：PNP最大功率耗散 (Abs)：3 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子面层：Matte Tin (Sn)
端子形式：FLAT端子位置：QUAD
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：180 MHz
Base Number Matches：1

ZX3CD2S1M832TA 数据手册

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ZX3CD2S1M832  
MPPS™ Miniature Package Power Solutions  
20V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY  
DIODE COMBINATION DUAL  
SUMMARY  
PNP Transistor  
V
=-20V; R  
= 64m ;  
= -3.5A  
C
CEO  
SAT  
Schottky Diode  
V = 40V; V = 500mV (@1A); I =1A  
R
F
C
DESCRIPTION  
Packaged in the new innovative 3mm x 2mm MLP this combination dual  
comprises an ultra low saturation PNP transistor and a 1A Schottky barrier  
diode. This excellent combination provides users with highly efficient  
performance in applications including DC-DC and charging circuits.  
Users will also gain several other key benefits:  
Performance capability equivalent to much larger packages  
3mm x 2mm Dual Die MLP  
Improved circuit efficiency & power levels  
PCB area and device placement savings  
Lower package height (0.9mm nom)  
Reduced component count  
Cathode  
C
FEATURES  
B
•
•
•
Extremely Low Saturation Voltage (-220mV @-1A)  
H
characterised up to -6A  
FE  
I
= -3.5A Continuous Collector Current  
E
C
Anode  
•
•
Extremely Low V , fast switching Schottky  
F
3mm x 2mm MLP  
APPLICATIONS  
•
•
•
•
DC - DC Converters  
Mobile Phones  
Charging Circuits  
Motor control  
PINOUT  
ORDERING INFORMATION  
DEVICE  
REEL  
TAPE  
WIDTH  
QUANTITY  
PER REEL  
ZX3CD2S1M832TA  
7
؅؅
 
8mm  
8mm  
3000  
3mm x 2mm Dual MLP  
underside view  
ZX3CD2S1M832TC 13
؅
؅
 
10000  
DEVICE MARKING  
2S1  
ISSUE 1 - JUNE 2002  
1
ZX3CD2S1M832  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VALUE  
UNIT  
Transistor  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Peak Pulse Current  
Continuous Collector Current (a)(f)  
Base Current  
V
V
V
-25  
-20  
V
V
CBO  
CEO  
EBO  
-7.5  
-6  
V
I
I
I
A
CM  
-3.5  
1000  
A
C
B
mA  
Power Dissipation at TA=25°C (a)(f)  
Linear Derating Factor  
P
P
P
P
P
P
1.5  
12  
W
D
D
D
D
D
D
mW/°C  
Power Dissipation at TA=25°C (b)(f)  
Linear Derating Factor  
2.45  
19.6  
W
mW/°C  
Power Dissipation at TA=25°C (c)(f)  
Linear Derating Factor  
1
8
W
mW/°C  
Power Dissipation at TA=25°C (d)(f)  
Linear Derating Factor  
1.13  
9
W
mW/°C  
Power Dissipation at TA=25°C (d)(g)  
Linear Derating Factor  
1.7  
13.6  
W
mW/°C  
Power Dissipation at TA=25°C (e)(g)  
Linear Derating Factor  
3
24  
W
mW/°C  
Storage Temperature Range  
Junction Temperature  
T
T
-55 to +150  
150  
°C  
°C  
stg  
j
THERMAL RESISTANCE  
PARAMETER  
SYMBOL  
VALUE  
83  
UNIT  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
Junction to Ambient (a)(f)  
Junction to Ambient (b)(f)  
Junction to Ambient (c)(f)  
Junction to Ambient (d)(f)  
Junction to Ambient (d)(g)  
Junction to Ambient (e)(g)  
Notes  
R
R
R
R
R
R
θJA  
θJA  
θJA  
θJA  
θJA  
θJA  
51  
125  
111  
73.5  
41.7  
(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The  
copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.  
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed  
pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.  
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only.  
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached  
attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.  
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached  
attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.  
(f) For a dual device with one active die.  
(g) For dual device with 2 active die running at equal power.  
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.  
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the  
package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm  
wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 500mW.  
ISSUE 1 - JUNE 2002  
2
ZX3CD2S1M832  
TRANSISTOR TYPICAL CHARACTERISTICS  
10  
1
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
V
CE(SAT)  
T
amb=25°C  
2oz Cu  
Limited  
Note (e)(g)  
2oz Cu  
Note (a)(f)  
DC  
1s  
100ms  
10ms  
1oz Cu  
Note (d)(g)  
0.1  
1ms  
Note (a)(f)  
100us  
1oz Cu  
0.01  
Single Pulse, Tamb=25°C  
1
Note (d)(f)  
0.1  
10  
0
25  
50  
75  
100 125 150  
V Collector-Emitter Voltage (V)  
Temperature (°C)  
CE  
Derating Curve  
Safe Operating Area  
225  
200  
175  
150  
125  
100  
75  
Note (a)(f)  
80  
60  
40  
20  
0
1oz copper  
Note (f)  
1oz copper  
Note (g)  
D=0.5  
2oz copper  
Note (f)  
Single Pulse  
D=0.05  
D=0.1  
D=0.2  
50  
2oz copper  
Note (g)  
25  
0
100µ 1m 10m 100m  
1
10 100 1k  
0.1  
1
10  
100  
Pulse Width (s)  
BoardCuArea(sqcm)  
Transient Thermal Impedance  
Thermal Resistance v Board Area  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
2oz copper  
Note (g)  
T
T
amb=25°C  
jmax=150°C  
Continuous  
2oz copper  
Note (f)  
1oz copper  
Note (g)  
1oz copper  
Note (f)  
0.1  
1
10  
100  
BoardCuArea(sqcm)  
Power Dissipation v Board Area  
ISSUE 1 - JUNE 2002  
3
ZX3CD2S1M832  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VALUE  
UNIT  
Schottky Diode  
Continuous Reverse Voltage  
V
V
40  
425  
1850  
3
V
A
R
F
Forward Voltage @ I =1000mA(typ)  
F
Forward Current  
I
I
I
mA  
A
F
Average Peak Forward Current D=50%  
FAV  
12  
7
A
A
Non Repetitive Forward Current t≤ 100␮s  
t≤ 10ms  
FSM  
Power Dissipation at TA=25°C (a)(f)  
Linear Derating Factor  
P
P
P
P
P
P
1.2  
12  
W
D
D
D
D
D
D
mW/°C  
Power Dissipation at TA=25°C (b)(f)  
Linear Derating Factor  
2
20  
W
mW/°C  
Power Dissipation at TA=25°C (c)(f)  
Linear Derating Factor  
0.8  
8
W
mW/°C  
Power Dissipation at TA=25°C (d)(f)  
Linear Derating Factor  
0.9  
9
W
mW/°C  
Power Dissipation at TA=25°C (d)(g)  
Linear Derating Factor  
1.36  
13.6  
W
mW/°C  
Power Dissipation at TA=25°C (e)(g)  
Linear Derating Factor  
2.4  
24  
W
mW/°C  
Storage Temperature Range  
Junction Temperature  
T
T
-55 to +150  
125  
°C  
°C  
stg  
j
THERMAL RESISTANCE  
PARAMETER  
SYMBOL  
VALUE  
83  
UNIT  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
Junction to Ambient (a)(f)  
Junction to Ambient (b)(f)  
Junction to Ambient (c)(f)  
Junction to Ambient (d)(f)  
Junction to Ambient (d)(g)  
Junction to Ambient (e)(g)  
Notes  
R
R
R
R
R
R
θJA  
θJA  
θJA  
θJA  
θJA  
θJA  
51  
125  
111  
73.5  
41.7  
(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The  
copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.  
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed  
pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.  
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only.  
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached  
attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.  
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached  
attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.  
(f) For a dual device with one active die.  
(g) For dual device with 2 active die running at equal power.  
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.  
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the  
package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm  
wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 400mW.  
ISSUE 1 - JUNE 2002  
4
ZX3CD2S1M832  
SCHOTTKY TYPICAL CHARACTERISTICS  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
Tamb=25°C  
Note (a)(f)  
80  
60  
40  
20  
0
2oz Cu  
Note (e)(g)  
2oz Cu  
Note (a)(f)  
D=0.5  
D=0.2  
1oz Cu  
Note (d)(g)  
Single Pulse  
D=0.05  
D=0.1  
1oz Cu  
Note (d)(f)  
100µ 1m 10m 100m  
1
10 100 1k  
0
25  
50  
75  
100  
125  
Pulse Width (s)  
Transient Thermal Impedance  
Temperature (°C)  
Derating Curve  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
225  
200  
175  
150  
125  
100  
75  
2oz copper  
Note (g)  
Tamb=25°C  
jmax=125°C  
Continuous  
1oz copper  
Note (f)  
T
1oz copper  
Note (g)  
2oz copper  
Note (f)  
2oz copper  
Note (f)  
1oz copper  
Note (g)  
50  
1oz copper  
Note (f)  
2oz copper  
Note (g)  
25  
0
0.1  
1
10  
100  
0.1  
1
10  
100  
Board Cu Area (sqcm)  
BoardCuArea(sqcm)  
Power Dissipation v Board Area  
Thermal Resistance v Board Area  
ISSUE 1 - JUNE 2002  
5
ZX3CD2S1M832  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL  
MIN.  
TYP.  
MAX. UNIT  
CONDITIONS.  
TRANSISTOR ELECTRICAL CHARACTERISTICS  
Collector-Base Breakdown  
Voltage  
V
V
V
-25  
-20  
-35  
-25  
V
V
V
I =-100␮A  
C
(BR)CBO  
(BR)CEO  
Collector-Emitter Breakdown  
Voltage  
I =-10mA*  
C
Emitter-Base Breakdown Voltage  
Collector Cut-Off Current  
-7.5  
-8.5  
I =-100␮A  
E
(BR)EBO  
CBO  
I
I
I
-25  
-25  
-25  
nA  
nA  
nA  
V
V
V
=-20V  
=-6V  
CB  
Emitter Cut-Off Current  
EBO  
EB  
Collector Emitter Cut-Off Current  
=-16V  
CES  
CES  
Collector-Emitter Saturation  
Voltage  
V
-19  
-30  
mV  
mV  
mV  
mV  
mV  
I =-0.1A, I =-10mA*  
C B  
CE(sat)  
-170  
-190  
-240  
-225  
-220  
-250  
-350  
-300  
I =-1A, I =-20mA*  
C B  
I =-1.5A, I =-50mA*  
C
B
I =-2.5A, I =-150mA*  
C
B
I =-3.5A, I =-300mA*  
C
B
Base-Emitter Saturation Voltage  
Base-Emitter Turn-On Voltage  
V
V
h
-1.10  
-0.87  
-1.075  
-0.950  
V
V
I =-3.5A, I =-350mA*  
C B  
BE(sat)  
BE(on)  
FE  
I =-3.5A, V =-2V*  
C
CE  
Static Forward Current Transfer  
Ratio  
300  
300  
150  
15  
475  
450  
230  
30  
I =-10mA, V =-2V*  
C CE  
I =-0.1A, V =-2V*  
C
C
CE  
CE  
CE  
I =-2A, V =-2V*  
I =-6A, V =-2V*  
C
Transition Frequency  
f
150  
180  
MHz I =-50mA, V =-10V  
T
C
CE  
f=100MHz  
Output Capacitance  
Turn-On Time  
C
21  
40  
30  
pF  
ns  
ns  
V
=-10V, f=1MHz  
obo  
(on)  
(off)  
CB  
t
t
V
=-10V, I =-1A  
C
=I =-50mA  
CC  
I
B1 B2  
Turn-Off Time  
670  
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS  
Reverse Breakdown Voltage  
Forward Voltage  
V
V
40  
60  
V
I =300␮A  
R
(BR)R  
F
240  
265  
305  
355  
390  
425  
495  
420  
270  
290  
340  
400  
450  
500  
600  
—
mV  
mV  
mV  
mV  
mV  
mV  
mV  
mV  
I =50mA*  
F
I =100mA*  
F
I =250mA*  
F
I =500mA*  
F
I =750mA*  
F
I =1000mA*  
F
I =1500mA*  
F
I =1000mA,T =100°C*  
F
a
Reverse Current  
I
50  
25  
12  
100  
␮A  
pF  
ns  
V =30V  
R
R
Diode Capacitance  
C
f=1MHz,V =25V  
R
D
Reverse Recovery  
Time  
t
switched from  
rr  
I = 500mA to I = 500mA  
F
R
R
Measured at I = 50mA  
*Measured under pulsed conditions.  
ISSUE 1 - JUNE 2002  
6
ZX3CD2S1M832  
TRANSISTOR TYPICAL CHARACTERISTICS  
1
100m  
10m  
0.25  
0.20  
0.15  
0.10  
0.05  
0.00  
IC/IB=50  
Tamb=25°C  
100°C  
25°C  
IC/IB=100  
IC/IB=50  
IC/IB=10  
-55°C  
1m  
100m  
10  
1m  
100m  
10  
IC10mCollector Current 1(A)  
IC10mCollector Current 1(A)  
VCE(SAT) vIC  
VCE(SAT) vIC  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
630  
540  
450  
360  
270  
180  
90  
V =2V  
IC/IB=50  
CE  
1.0  
0.8  
0.6  
0.4  
100°C  
25°C  
-55°C  
25°C  
-55°C  
100°C  
100m  
0
1m  
10m  
100m  
1
10  
1m  
10  
IC10mCollector Current 1(A)  
IC Collector Current (A)  
h vIC  
VBE(SAT) vIC  
FE  
V =2V  
1.0  
0.8  
0.6  
0.4  
0.2  
CE  
-55°C  
25°C  
100°C  
IC10mCollector Current 1(A)  
1m  
100m  
10  
VBE(ON) vIC  
ISSUE 1 - JUNE 2002  
7
ZX3CD2S1M832  
SCHOTTKY TYPICAL CHARACTERISTICS  
ISSUE 1 - JUNE 2002  
8
ZX3CD2S1M832  
MLP832 PACKAGE OUTLINE (3mm x 2mm Micro Leaded Package)  
CONTROLLING DIMENSIONS IN MILLIMETRES  
APPROX. CONVERTED DIMENSIONS IN INCHES  
MLP832 PACKAGE DIMENSIONS  
MILLIMETRES  
INCHES  
MILLIMETRES  
MIN. MAX.  
0.65 REF  
2.00 BSC  
INCHES  
MIN. MAX.  
DIM  
DIM  
MIN.  
0.80  
0.00  
0.65  
0.15  
0.24  
0.17  
MAX.  
1.00  
0.05  
0.75  
0.25  
0.34  
0.30  
MIN.  
MAX.  
0.039  
A
0.031  
0.00  
e
E
0.0256 BSC  
0.0787 BSC  
A1  
A2  
A3  
b
0.002  
0.0255  
0.006  
0.009  
0.0066  
0.0295  
0.0098  
0.013  
E2  
E4  
L
0.43  
0.63  
0.36  
0.017  
0.0249  
0.014  
0.16  
0.20  
0.006  
0.0078  
0.00  
0.45  
0.0157  
0.005  
b1  
D
0.0118  
L2  
r
0.125  
3.00 BSC  
0.118 BSC  
0.075 BSC  
0.0029 BSC  
D2  
D3  
0.82  
1.01  
1.02  
1.21  
0.032  
0.040  
⍜
0Њ  
12Њ  
0Њ  
12Њ  
0.0397  
0.0476  
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Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
europe.sales@zetex.com  
Telephone: (631) 360 2222  
Fax: (631) 360 8222  
usa.sales@zetex.com  
Telephone: (852) 26100 611  
Fax: (852) 24250 494  
asia.sales@zetex.com  
These offices are supported by agents and distributors in major countries world-wide.  
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced  
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company  
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.  
For the latest product information, log on to www.zetex.com  
ISSUE 1 - JUNE 2002  
9

ZX3CD2S1M832TA 相关器件

型号 制造商 描述 价格 文档
ZX3CD2S1M832TC ZETEX MPPS?? Miniature Package Power Solutions 20V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL 获取价格
ZX3CD3S1M832 ZETEX MPPS⑩ Miniature Package Power Solutions 40V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL 获取价格
ZX3CD3S1M832TA ZETEX MPPS⑩ Miniature Package Power Solutions 40V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL 获取价格
ZX3CD3S1M832TA DIODES Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, 3 X 2 MM, MINIATURE, MLP832, 10 PIN 获取价格
ZX3CD3S1M832TC ZETEX MPPS⑩ Miniature Package Power Solutions 40V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL 获取价格
ZX3CDBS1M832 ZETEX MPPS⑩ Miniature Package Power Solutions 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL 获取价格
ZX3CDBS1M832TA ZETEX MPPS⑩ Miniature Package Power Solutions 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL 获取价格
ZX3CDBS1M832TA DIODES 元器件封装:8-MLP（3x2）; 获取价格
ZX3CDBS1M832TC ZETEX MPPS⑩ Miniature Package Power Solutions 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL 获取价格
ZX3V0 YEASHIN 500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators 获取价格

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