PESD2ETH1G-TR 封装和模型

品牌:NEXPERIA
描述:反向峰值电压VRWM(V):- ;最小反向击穿电压VBR(V):100V ;最大钳位电压Vc(V):- ;最大峰值脉冲电流IPP(A):- ;最大峰值脉冲功率Ppk(W):- ;元器件封装:TO-236AB;
EDA/CDA模型
原理图符号
PCB 封装图
3D模型
其他器件
- PESD3V3L2BT,215
- PESD5V0S1UL,315
- PESD5V0X1BCAL,315
- PESD3V3U1UT,215
- PESD5V2S2UT
- PESD18VV1BBSFYL
- PESD0402-240
- PESD24VL1BA,115
- PESD2ETH1G-TR
- PESD5V0H1BSFYL
- PESD24VF1BLYL
- PESD2V5Y1BSFYL
- PESD5V0L1UA,115
- PESD3V3X1BL
- PESD2CANFD27V-TR
- PESD12VL1BA,115
- PESD5V0L2UU,115
- PESD3V3S1UB
- PESD5V0S1BB
- PESD3V3Y1BSFYL
- PESD1FLEX
- PESD24VU1UT,215
- PESD0402-140
- PESD3V3L1UB,115
- PESDS552DBZR
- PESD12VS1UL,315
- PESD12VS2UT
- PESD5V0U1UA,115
- PESD0603-140