SI3429EDV-T1-GE3 封装和模型
品牌：VISHAY
描述：漏源电压Vdss(V):20V;额定电流Id(A):8A (Ta), 8A (Tc);最大导通阻抗Ron(mΩ):21 mOhm @ 4A, 10V;类型:P-Channel;栅极电荷Qg(nC)
EDA/CDA模型
原理图符号
PCB 封装图
3D模型
其他器件
- SI3460BDV-T1-E3
- SI3424CDV-T1-GE3
- SI3454ADV-T1-E3
- SI3407DV-T1-GE3
- SI3429EDV-T1-GE3
- SI3493DDV-T1-GE3
- SI3458BDV-T1-GE3
- SI3456DDV-T1-E3
- SI3453DV-T1-GE3
- SI3457CDV-T1-E3
- SI3460DDV-T1-GE3
- SI3437DV-T1-E3
- SI3430DV-T1-E3
- SI3442BDV-T1-E3
- SI3438DV-T1-E3
- SI3421DV-T1-GE3
- SI3443CDV-T1-E3
- SI3440DV-T1-E3
- SI3410DV-T1-GE3
- SI3483DDV-T1-GE3
- SI3402-B-GMR
- SI3457BDV-T1-E3
- SI3458BDV-T1-E3
- SI3443DDV-T1-GE3
- SI3440ADV-T1-GE3
- SI3469DV-T1-E3