STP110N8F6 封装和模型

描述:类型:N沟道 漏源电压(Vdss):80V 连续漏极电流(Id):110A 功率(Pd):200W 导通电阻(RDS(on)@Vgs,Id):6.5mΩ@10V,55A 阈值电压(Vgs(th)@Id):4.5V@250μA
EDA/CDA模型
原理图符号
PCB 封装图
3D模型
其他器件
- STP16CPS05MTR
- STP16DP05PTR
- STP16DPP05TTR
- STP13NK60Z
- STP16CPPS05TTR
- STP16CPP05TTR
- STP150N3LLH6
- STP10NK70ZFP
- STP130N6F7
- STP150N10F7
- STP14NK50Z
- STP11N65M5
- STP16DP05XTTR
- STP13N95K3
- STP141NF55
- STP13N65M2
- STP10NK80Z
- STP100NF04
- STP11NM60
- STP16DPS05MTR
- STP11NK50ZFP
- STP10N60M2
- STP16CPC26PTR
- STP16DPS05XTTR
- STP11N60DM2
- STP16CPC05MTR
- STP160N75F3
- STP16CPS05TTR
- STP12N50M2
- STP110N8F6
- STP100N6F7
- STP15N65M5
- STP16DPP05XTTR
- STP16N60M2
- STP15NM60ND
- STP12NM50
- STP12NK30Z
- STP13NM60ND
- STP10NM60ND
- STP16CPP05XTTR
- STP10LN80K5
- STP16DPPS05XTTR
- STP16DPS05TTR
- STP11NM65N
- STP16DP05TTR
- STP15NK50Z
- STP180N4F6
- STP16DP05MTR
- STP10N105K5
- STP15N80K5