| 型号起始： | JS28F640* (40) JS28F640J* (21) JS28F640P* (19) |
| 所属品牌： | 不限 NUMONYX(16) INTEL(15) MICRON(9) |
| 功能分类： | 不限 闪存(0) 光电二极管(0) 内存集成电路(0) 存储(0) PC(5) |
| 品牌 | 图片 | 型号 | 描述 | 用途标签 | 供应商 | |
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JS28F640J3F75A
中文翻译 品牌: MICRON |
Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC) Numonyx®嵌入式闪存（ J3 65 nm）的单细胞每比特（ SBC ） |
闪存 | ||
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JS28F640J3F75B
EDA模型
中文翻译 品牌: MICRON |
Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hardening precautions for the handling and assembly of semicondu | PC | ||
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JS28F640J3F75D
中文翻译 品牌: MICRON |
32Mb, 64Mb, 128Mb, 65nm Embedded Parallel NOR Flash Memory, Single Bit Per Cell (SBC) | ||||
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JS28F640J3F75E
中文翻译 品牌: MICRON |
Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hardening precautions for the handling and assembly of semicondu | PC | ||
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JS28F640P30BF75A
EDA模型
中文翻译 品牌: MICRON |
Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hardening precautions for the handling and assembly of semicondu | PC | ||
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JS28F640P30BF75D
EDA模型
中文翻译 品牌: MICRON |
64Mb, 128Mb, 65nm, Single Bit Per Cell, Parallel NOR Flash | ||||
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JS28F640P30TF75A
EDA模型
中文翻译 品牌: MICRON |
Numonyx® Axcell⢠P30-65nm Flash Memory Numonyx® Axcellâ ?? ¢ P30-65nm闪存 |
闪存 | ||
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JS28F640P33BF70A
EDA模型
中文翻译 品牌: MICRON |
Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hardening precautions for the handling and assembly of semicondu | PC | ||
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JS28F640P33TF70A
EDA模型
中文翻译 品牌: MICRON |
Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hardening precautions for the handling and assembly of semicondu | PC |
Total:91
总9条记录，每页显示30条记录分1页显示。