品牌 | 图片 | 型号 | 描述 | 用途标签 | 供应商 | |
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IRFS130
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | 局域网 晶体管 | ||
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IRFS131
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 9.7A I(D), 80V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | 局域网 晶体管 | ||
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IRFS132
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 8.3A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | 局域网 晶体管 | ||
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IRFS133
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 8.3A I(D), 80V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | 局域网 晶体管 | ||
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IRFS142
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 17.3A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | 局域网 晶体管 | ||
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IRFS143
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 17.3A I(D), 80V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | 局域网 晶体管 | ||
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IRFS152
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 23.5A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | 局域网 晶体管 | ||
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IRFS153
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 23.5A I(D), 80V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | 局域网 晶体管 | ||
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IRFS230
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 6.2A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | 局域网 晶体管 | ||
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IRFS233
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 5.5A I(D), 150V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | ||||
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IRFS242
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 11A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | 局域网 晶体管 | ||
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IRFS252
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 17.3A I(D), 200V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | 局域网 晶体管 | ||
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IRFS253
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 17.3A I(D), 150V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | 局域网 晶体管 | ||
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IRFS254A
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 16A I(D), 250V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | 局域网 脉冲 晶体管 | ||
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IRFS342
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 5.5A I(D), 400V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | 局域网 晶体管 | ||
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IRFS343
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 5.5A I(D), 350V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | 局域网 晶体管 | ||
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IRFS352
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 9A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | 局域网 晶体管 | ||
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IRFS353
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 9A I(D), 350V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | 局域网 晶体管 | ||
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IRFS430
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 3.1A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | ||||
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IRFS433
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 2.8A I(D), 450V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | ||||
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IRFS442
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 4.8A I(D), 500V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | ||||
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IRFS443
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 4.8A I(D), 450V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | ||||
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IRFS452
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 8.3A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | 局域网 晶体管 | ||
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IRFS453
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 8.3A I(D), 450V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | 局域网 晶体管 | ||
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IRFS520A
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 7.2A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN | 局域网 开关 脉冲 晶体管 | ||
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IRFS522
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 8A I(D), 100V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN | 局域网 晶体管 | ||
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IRFS523
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 8A I(D), 80V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN | 局域网 晶体管 | ||
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IRFS530
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 局域网 晶体管 | ||
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IRFS531
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 9.7A I(D), 80V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 局域网 晶体管 | ||
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IRFS533
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 12A I(D), 80V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN |