品牌 | 图片 | 型号 | 描述 | 用途标签 | 供应商 | |
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0104-100
中文翻译 品牌: ETC |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 16A I(C) | SOT-161VAR
晶体管| BJT | NPN | 60V V( BR ) CEO | 16A I(C ) | SOT- 161VAR\n |
晶体 晶体管 | |||
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0105-100
中文翻译 品牌: GHZTECH |
100 Watts, 28 Volts, Class AB Defcom 100 - 500 MHz 100瓦, 28伏特, AB类Defcom 100 - 500兆赫 |
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06F7752
中文翻译 品牌: ETC |
TRANSISTOR MIT DRAIN STROM MESSAUSGANG
麻省理工学院的晶体管漏极STROM MESSAUSGANG\n |
晶体 晶体管 | |||
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06N80C3
中文翻译 品牌: INFINEON |
Cool MOS™ Power Transistor 酷MOS ™功率晶体管 |
晶体 晶体管 | |||
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10-0B06PPA004RC-L022A09
中文翻译 品牌: VINCOTECH |
Optimised collector emitter saturation voltage and forward voltage for low conduction losses;Reverse conductive IGBT technology;Smooth switching perfo | 双极性晶体管 | |||
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10-0B06PPA006RC-L023A09
中文翻译 品牌: VINCOTECH |
Optimised collector emitter saturation voltage and forward voltage for low conduction losses;Reverse conductive IGBT technology;Smooth switching perfo | 双极性晶体管 | |||
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10-0B06PPA010RC-L025A09
中文翻译 品牌: VINCOTECH |
Optimised collector emitter saturation voltage and forward voltage for low conduction losses;Reverse conductive IGBT technology;Smooth switching perfo | 双极性晶体管 | |||
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10-0B06PPA010RC01-L025A19
中文翻译 品牌: VINCOTECH |
Optimised collector emitter saturation voltage and forward voltage for low conduction losses;Reverse conductive IGBT technology;Smooth switching perfo | 双极性晶体管 | |||
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10-0B06PPA010RC02-L025A89
中文翻译 品牌: VINCOTECH |
Optimised collector emitter saturation voltage and forward voltage for low conduction losses;Reverse conductive IGBT technology;Smooth switching perfo | 双极性晶体管 | |||
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10-0B06PRA004RC-L022C09
中文翻译 品牌: VINCOTECH |
Optimised collector emitter saturation voltage and forward voltage for low conduction losses;Reverse conductive IGBT technology;Smooth switching perfo | 双极性晶体管 | |||
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10-EZ122PC100M7-PL39F78T
中文翻译 品牌: VINCOTECH |
IGBT M7 Easy paralleling Low turn-off losses Low collector emitter saturation voltage Positive temperature coefficient Short tail current Switching o | 双极性晶体管 | |||
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10-FE06PPA020SJ-LJ01B08Z
中文翻译 品牌: VINCOTECH |
IGBT fast 5us short circuit withstand time High speed switching Low EMI Short tail current | 双极性晶体管 | |||
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10-FE06PPA030SJ03-LK24B18Z
中文翻译 品牌: VINCOTECH |
IGBT fast 5us short circuit withstand time High speed switching Low EMI Short tail current | 双极性晶体管 | |||
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10-FE06PPA030SJ04-LJ02B03Z
中文翻译 品牌: VINCOTECH |
IGBT fast 5us short circuit withstand time High speed switching Low EMI Short tail current | 双极性晶体管 | |||
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10-FY07LBA100S5-PG08J58T
中文翻译 品牌: VINCOTECH |
IGBT S5 High speed and smooth switching Low gate charge Very low collector emitter saturation voltage | 双极性晶体管 | |||
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100A100JP500X
中文翻译 品牌: FREESCALE |
Gallium Arsenide PHEMT RF Power Field Effect Transistor 砷化镓PHEMT RF功率场效应晶体管 |
晶体 晶体管 功率场效应晶体管 | |||
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100A101JP500X
中文翻译 品牌: FREESCALE |
Gallium Arsenide PHEMT RF Power Field Effect Transistor 砷化镓PHEMT RF功率场效应晶体管 |
晶体 晶体管 功率场效应晶体管 | |||
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100A7R5JP150X
中文翻译 品牌: FREESCALE |
Gallium Arsenide PHEMT RF Power Field Effect Transistor 砷化镓PHEMT RF功率场效应晶体管 |
晶体 晶体管 功率场效应晶体管 | |||
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100B101JP500X
中文翻译 品牌: FREESCALE |
Gallium Arsenide PHEMT RF Power Field Effect Transistor 砷化镓PHEMT RF功率场效应晶体管 |
晶体 晶体管 功率场效应晶体管 | |||
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100B102JP500X
中文翻译 品牌: FREESCALE |
Gallium Arsenide PHEMT RF Power Field Effect Transistor 砷化镓PHEMT RF功率场效应晶体管 |
晶体 晶体管 功率场效应晶体管 | |||
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100GAL12DN2
中文翻译 品牌: ETC |
IGBT Module
IGBT模块\n |
双极性晶体管 | |||
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100GB120DN2
中文翻译 品牌: ETC |
IGBT Module
IGBT模块\n |
双极性晶体管 | |||
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100GB120DNK
中文翻译 品牌: ETC |
IGBT Module
IGBT模块\n |
双极性晶体管 | |||
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100GB170DN2
中文翻译 品牌: ETC |
IGBT Module
IGBT模块\n |
双极性晶体管 | |||
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100GT120DN2
中文翻译 品牌: ETC |
IGBT Module
IGBT模块\n |
双极性晶体管 | |||
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100N02G-TM3-T
中文翻译 品牌: UTC |
Power Field-Effect Transistor, | ||||
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100N02G-TN3-R
中文翻译 品牌: UTC |
Power Field-Effect Transistor, | ||||
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100N02G-TN3-T
中文翻译 品牌: UTC |
Power Field-Effect Transistor | ||||
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100N02L-TM3-T
中文翻译 品牌: UTC |
Power Field-Effect Transistor, | ||||
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100N02L-TN3-R
中文翻译 品牌: UTC |
Power Field-Effect Transistor, |