100A100JP500X中文资料_数据手册_规格书

Document Number: MRFG35005MT1

Rev. 3, 1/2006

Freescale Semiconductor

Technical Data

Replaced by MRFG35005NT1. There are no form, fit or function changes with this part

replacement. N suffix added to part number to indicate transition to lead-free

terminations.

MRFG35005MT1

Gallium Arsenide PHEMT

RF Power Field Effect Transistor

Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies

from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB

linear base station applications.

3.5 GHz, 4.5 W, 12 V

POWER FET

GaAs PHEMT

• Typical W-CDMA Performance: -42 dBc ACPR, 3.55 GHz, 12 Volts,

I_DQ= 80 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A

@ 0.01% Probability)

Output Power — 450 mWatt

Power Gain — 11 dB

Efficiency — 25%

• 4.5 Watts P1dB @ 3.55 GHz

• Excellent Phase Linearity and Group Delay Characteristics

• High Gain, High Efficiency and High Linearity

• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.

CASE 466-03, STYLE 1

PLD-1.5

PLASTIC

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Source Voltage

V

15

Vdc

DSS

(2)

Total Device Dissipation @ T = 25°C

P

10.5

0.07

W

W/°C

C

D

(2)

Derate above 25°C

Gate-Source Voltage

RF Input Power

V

-5

Vdc

dBm

°C

GS

P

30

in

Storage Temperature Range

T

stg

-65 to +150

175

(1)

Channel Temperature

T

ch

°C

Operating Case Temperature Range

T

-20 to +85

°C

C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

(2)

Thermal Resistance, Junction to Case

Class AB

R

θ

JC

14.2

°C/W

Table 3. Moisture Sensitivity Level

Test Methodology

Per JESD 22-A113, IPC/JEDEC J-STD-020

Rating

Package Peak Temperature

Unit

1

260

°C

1. For reliable operation, the operating channel temperature should not exceed 150°C.

2. Simulated.

MRFG35005MT1

RF Device Data

Freescale Semiconductor

1

Table 4. Electrical Characteristics (T = 25°C unless otherwise noted)

C

Characteristic

Symbol

Min

Typ

Max

Unit

Saturated Drain Current

(V = 3.5 Vdc, V = 0 Vdc)

I

—

1.7

—

Adc

DSS

GSS

DSO

DS

GS

Off State Leakage Current

(V = -0.4 Vdc, V = 0 Vdc)

I

—

< 1.0

—

100

600

9

µAdc

mAdc

Vdc

dB

GS

DS

Off State Drain Current

I

(V = 12 Vdc, V = -2.5 Vdc)

DS

GS

Off State Current

I

—

< 1.0

-0.9

-0.8

11

DSX

(V = 28.5 Vdc, V = -2.5 Vdc)

DS

GS

Gate-Source Cut-off Voltage

(V = 3.5 Vdc, I = 8.7 mA)

V

GS(th)

V

GS(Q)

-1.2

-1.1

10

-0.7

-0.6

—

DS

Quiescent Gate Voltage

(V = 12 Vdc, I = 80 mA)

DS

D

Power Gain

G

ps

(V = 12 Vdc, I

= 80 mA, f = 3.55 GHz)

DD

DQ

Output Power, 1 dB Compression Point

P

—

4.5

—

W

1dB

(V = 12 Vdc, I

= 80 mA, f = 3.55 GHz)

DD

DQ

Drain Efficiency

h

22

25

—

%

D

(V = 12 Vdc, I

= 80 mA, P = 450 mW Avg.,

out

DD

DQ

f = 3.55 GHz)

Adjacent Channel Power Ratio

(V = 12 Vdc, P = 450 mW Avg., I = 80 mA,

ACPR

—

-42

-39

dBc

DD

out

DQ

f = 3.55 GHz, W-CDMA, 8.5 P/A @ 0.01% Probability,

64 CH, 3.84 MCPS)

MRFG35005MT1

RF Device Data

Freescale Semiconductor

2

V

GS

DD

C11 C10 C9

C8

C7

C6

C5

C16 C17 C18 C19 C20 C21 C22

R1

C3 C4

C14 C15

Z5

Z15

RF

C2

Z3

C12

Z4 Z6 Z7 Z8 Z9 Z10 Z11

C13

Z12 Z13 Z14 Z16

C23

Z17

INPUT

OUTPUT

Z1

Z2

Z18

C1

C24

C29

C28

C27

C26

C25

Z1, Z18

Z2

Z3

Z4

Z5, Z15

0.125″ x 0.044″ Microstrip

0.435″ x 0.044″ Microstrip

0.298″ x 0.254″ Microstrip

0.336″ x 0.590″ Microstrip

0.527″ x 0.015″ Microstrip

0.050″ x 0.025″ Microstrip

0.125″ x 0.025″ Microstrip

Z11

Z12

Z13

Z14

Z16

Z17

PCB

0.400″ x 0.081″ Microstrip

0.120″ x 0.408″ Microstrip

0.259″ x 0.058″ Microstrip

0.269″ x 0.348″ Microstrip

0.149″ x 0.062″ Microstrip

0.553″ x 0.044″ Microstrip

Z6, Z8, Z10

Z7, Z9

Rogers 4350, 20 mil, ε = 3.5

r

Figure 1. 3.5 GHz Test Circuit Schematic

Table 5. 3.5 GHz Test Circuit Component Designations and Values

Part

Description

7.5 pF Chip Capacitors

Part Number

100A7R5JP150X

08051J0R4BBT

08051J3R9BBT

100A100JP500X

100A101JP500X

100B101JP500X

100B102JP500X

Manufacturer

ATC

C1, C24

C2

0.4 pF Chip Capacitor (0805)

3.9 pF Chip Capacitors (0805)

10 pF Chip Capacitors

AVX

C3, C4, C14, C15

C5, C16

C6, C17

C7, C18

C8, C19

C9, C20

C10, C21

C11, C22

C12, C28

C13, C26, C27

C23

AVX

ATC

100 pF Chip Capacitors

ATC

100 pF Chip Capacitors

ATC

1000 pF Chip Capacitors

ATC

3.9 µF Chip Capacitors

ATC

0.1 µF Chip Capacitors

ATC

22 µF, 35 V Tantalum Surface Mount Capacitors

0.1 pF Chip Capacitors (0805)

0.3 pF Chip Capacitors (0805)

1.0 pF Chip Capacitor (0805)

1.2 pF Chip Capacitor (0805)

0.9 pF Chip Capacitor (0805)

100 W Chip Resistor

Newark

AVX

08051J0R1BBT

08051J0R3BBT

08051J1R0BBT

08051J1R2BBT

08051J0R9BBT

AVX

C25

AVX

C29

AVX

R1

Newark

MRFG35005MT1

RF Device Data

Freescale Semiconductor

3

C7

C18

C6

C5

C20

C19

C21

C10 C9 C8

C17

C16

C11

C22

R1

C4

C3

C14

C15

C12

C13

C2

C23

C1

C24

C25

C29

C28

C27

C26

MRFG35005M

Rev 1

Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor

signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have

no impact on form, fit or function of the current product.

Figure 2. 3.5 GHz Test Circuit Component Layout

MRFG35005MT1

RF Device Data

Freescale Semiconductor

4

TYPICAL CHARACTERISTICS

−10

−20

IRL

−20

−30

−40

−50

−60

V

= 12 Vdc, I = 85 mA

DQ

f = 3.55 GHz, 8.5 P/A 3GPP W−CDMA

DS

−30

−40

−50

−60

Γ = 0.868é−115.15_, Γ = 0.764é−139.11_

S

L

ACPR

0.01

0.1

, OUTPUT POWER (WATTS)

1

P

out

Figure 3. W-CDMA ACPR and Input Return

Loss versus Output Power

20

17.5

15

40

35

30

25

20

15

10

PAE

V

= 12 Vdc, I = 85 mA

DQ

f = 3.55 GHz, 8.5 P/A 3GPP W−CDMA

DS

Γ = 0.868é−115.18_, Γ = 0.764é−139.11_

S

L

G

12.5

10

T

7.5

5

2.5

0

5

0

0.01

0.1

, OUTPUT POWER (WATTS)

1

P

out

Figure 4. Transducer Gain and Power Added

Efficiency versus Output Power

NOTE: All data is referenced to package lead interface. Γ_SandΓ_Lare the impedances presented to the DUT.

All data is generated from load pull, not from the test circuit shown.

MRFG35005MT1

RF Device Data

Freescale Semiconductor

5

Table 6. Class AB Common Source S-Parameters at V_DS= 12 Vdc, I_DQ= 85 mA

S

22

11

21

12

f

GHz

|S

|

11

∠ φ

|S

|

21

∠ φ

|S

|

12

∠ φ

|S |

22

∠ φ

0.50

0.55

0.60

0.65

0.70

0.75

0.80

0.85

0.90

0.95

1.00

1.05

1.10

1.15

1.20

1.25

1.30

1.35

1.40

1.45

1.50

1.55

1.60

1.65

1.70

1.75

1.80

1.85

1.90

1.95

2.00

2.05

2.10

2.15

2.20

2.25

2.30

2.35

2.40

2.45

2.50

2.55

2.60

2.65

2.70

2.75

2.80

0.903

0.901

0.902

0.900

0.901

0.899

0.901

0.900

0.899

0.900

0.899

0.898

0.901

0.897

0.903

0.901

0.900

0.899

0.902

0.903

0.902

0.903

0.904

0.903

0.906

0.905

0.904

0.906

0.905

0.906

0.904

0.903

0.902

0.901

0.899

0.898

0.894

0.895

-171.71

-173.53

-175.37

-177.11

-178.58

179.95

178.58

177.36

176.17

174.93

173.84

172.74

171.57

170.42

169.31

168.10

166.96

165.99

164.48

163.52

160.23

159.17

158.30

157.39

156.46

155.63

154.92

154.09

153.38

152.74

152.00

151.41

150.85

150.13

149.60

149.11

148.41

147.74

147.11

146.23

145.41

144.66

143.78

142.76

141.87

140.80

139.70

7.441

6.807

6.268

5.817

5.441

5.096

4.804

4.516

4.293

4.089

3.900

3.730

3.567

3.423

3.284

3.154

3.040

2.928

2.821

2.720

2.618

2.537

2.456

2.386

2.317

2.251

2.195

2.137

2.080

2.030

1.984

1.937

1.897

1.860

1.822

1.788

1.761

1.729

1.701

1.677

1.651

1.632

1.612

1.591

1.571

1.554

1.539

83.44

81.55

79.64

77.76

75.93

74.17

72.37

70.46

68.89

67.19

65.58

63.88

62.18

60.54

58.91

57.19

55.59

54.05

52.41

50.95

49.25

47.79

46.40

44.91

43.49

41.97

40.59

39.12

37.80

36.43

34.98

33.71

32.47

31.10

29.77

28.49

27.10

25.78

24.47

22.98

21.58

20.17

18.88

17.38

15.88

14.50

12.83

0.029

0.030

0.031

0.030

0.031

0.032

0.033

4.18

0.604

0.603

0.602

0.600

0.599

0.600

0.601

0.602

0.600

0.606

0.607

0.609

0.610

0.613

0.612

0.613

0.615

0.618

0.619

0.617

0.619

0.620

0.619

0.620

0.619

0.621

0.619

0.618

0.619

0.618

0.616

-171.44

-172.51

-173.76

-175.04

-176.15

-177.32

-178.45

-179.44

179.38

178.20

177.19

176.10

175.06

174.08

173.04

171.90

171.14

170.54

169.31

168.98

170.81

170.02

169.38

168.87

168.03

167.41

166.88

165.94

165.27

164.72

163.90

163.26

162.83

162.02

161.22

160.82

160.12

159.20

158.79

158.15

157.20

156.64

156.02

155.10

154.49

154.05

153.08

3.31

2.49

1.53

0.64

-0.21

-0.90

-1.80

-2.30

-3.17

-4.01

-4.63

-5.38

-6.01

-6.66

-7.52

-8.14

-8.73

-9.30

-9.89

-10.77

-11.27

-11.82

-12.27

-12.67

-13.06

-13.50

-13.91

-14.35

-14.79

-15.36

-15.79

-16.26

-16.74

-17.43

-17.97

-18.45

-18.73

-19.16

-19.61

-20.07

-20.42

-20.71

-21.29

-21.77

-22.47

-23.36

MRFG35005MT1

RF Device Data

Freescale Semiconductor

6

Table 6. Class AB Common Source S-Parameters at V_DS= 12 Vdc, I_DQ= 85 mA (continued)

S

22

11

21

12

f

GHz

|S

|

11

∠ φ

|S

|

21

∠ φ

|S

|

12

∠ φ

|S |

22

∠ φ

2.85

2.90

2.95

3.00

3.05

3.10

3.15

3.20

3.25

3.30

3.35

3.40

3.45

3.50

3.55

3.60

3.65

3.70

3.75

3.80

3.85

3.90

3.95

4.00

4.05

4.10

4.15

4.20

4.25

4.30

4.35

4.40

4.45

4.50

4.55

4.60

4.65

4.70

4.75

4.80

4.85

4.90

4.95

5.00

0.895

0.893

0.894

0.892

0.890

0.892

0.891

0.888

0.890

0.889

0.887

0.889

0.888

0.887

0.888

0.887

0.888

0.887

0.888

0.887

0.886

0.887

0.886

0.884

0.885

0.884

0.883

0.882

0.881

0.880

0.879

0.878

0.877

0.876

0.874

0.870

0.867

0.866

138.63

137.48

136.05

134.72

133.46

131.81

130.31

128.98

127.31

125.83

124.49

122.78

121.40

119.96

118.32

116.96

115.68

114.24

113.05

111.84

110.59

109.45

108.32

107.24

106.10

105.02

104.22

103.08

102.00

101.08

100.08

98.90

1.522

1.507

1.493

1.478

1.465

1.453

1.436

1.421

1.409

1.394

1.380

1.367

1.352

1.338

1.328

1.313

1.299

1.287

1.274

1.262

1.252

1.240

1.230

1.222

1.216

1.205

1.198

1.195

1.189

1.184

1.183

1.176

1.172

1.176

1.172

1.177

1.175

1.176

1.178

1.177

1.175

1.177

1.179

11.37

0.034

0.035

0.036

0.037

0.038

0.039

0.040

0.041

0.042

0.043

-24.77

-26.15

-27.11

-27.92

-28.51

-29.31

-29.98

-30.69

-31.47

-32.45

-33.06

-33.59

-34.06

-34.46

-35.34

-36.09

-36.68

-37.71

-38.84

-39.90

-40.73

-41.33

-41.73

-42.00

-42.60

-43.13

-43.70

-44.59

-45.54

-46.22

-46.93

-48.09

-49.06

-49.87

-50.58

-51.24

-52.21

-53.61

-55.11

-56.51

-57.66

-58.60

-59.41

-60.39

0.618

0.616

0.618

0.617

0.616

0.617

0.615

0.616

0.615

0.616

0.615

0.613

0.612

0.613

0.612

0.613

0.612

0.611

0.609

0.607

0.608

0.605

0.606

0.607

0.604

0.603

0.601

0.597

0.594

0.590

0.589

0.588

0.585

0.583

152.46

151.97

150.93

150.06

149.53

148.45

147.51

146.90

145.95

145.01

144.44

143.59

142.69

141.92

141.09

140.03

139.19

138.40

137.36

136.45

135.74

134.56

133.64

133.05

131.91

130.81

130.15

128.89

127.57

126.81

125.63

124.16

123.26

122.03

120.40

119.45

118.22

116.51

115.24

113.89

112.15

110.76

109.40

107.71

9.90

8.24

6.55

4.95

3.30

1.60

0.04

-1.72

-3.40

-4.89

-6.59

-8.31

-9.91

-11.56

-13.16

-14.69

-16.36

-17.90

-19.43

-20.85

-22.36

-24.01

-25.35

-26.93

-28.43

-29.78

-31.44

-33.00

-34.46

-35.96

-37.67

-39.19

-40.74

-42.48

-44.02

-45.83

-47.87

-49.70

-51.58

-53.56

-55.56

-57.53

-59.75

97.99

96.91

95.41

94.29

92.80

91.10

89.66

87.90

86.08

84.39

82.48

80.32

MRFG35005MT1

RF Device Data

Freescale Semiconductor

7

NOTES

MRFG35005MT1

RF Device Data

Freescale Semiconductor

8

NOTES

MRFG35005MT1

RF Device Data

Freescale Semiconductor

9

NOTES

MRFG35005MT1

RF Device Data

Freescale Semiconductor

10

PACKAGE DIMENSIONS

0.146

3.71

A

F

0.095

2.41

3

0.115

2.92

0.115

2.92

1

2

R

D

L

B

0.020

0.51

4

_

"

0.35 (0.89) X 45

_

inches

mm

5

N

K

10 DRAFT

_

SOLDER FOOTPRINT

Q

P

U

INCHES

MIN

MILLIMETERS

DIM

A

B

C

D

E

MAX

0.265

0.235

0.072

0.150

0.026

0.044

0.070

0.063

0.180

0.285

0.255

0.240

0.008

0.063

0.210

0.012

0.021

0.010

MIN

6.48

5.72

1.65

3.30

0.53

0.66

1.27

1.14

4.06

6.93

6.22

5.84

0.00

1.40

5.08

0.15

0.00

MAX

6.73

5.97

1.83

3.81

0.66

1.12

1.78

1.60

4.57

7.24

6.48

6.10

0.20

1.60

5.33

0.31

0.53

0.25

H

ZONE V

ZONE W

C

0.255

0.225

0.065

0.130

0.021

0.026

0.050

0.045

0.160

0.273

0.245

0.230

0.000

0.055

0.200

0.006

E

Y

4

NOTES:

1. INTERPRET DIMENSIONS AND TOLERANCES

PER ASME Y14.5M, 1984.

2. CONTROLLING DIMENSION: INCH

3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W,

AND X.

F

G

H

J

2

1

K

L

STYLE 1:

PIN 1. DRAIN

2. GATE

N

P

3

3. SOURCE

4. SOURCE

Q

R

S

G

ZONE X

U

ZONE V 0.000

ZONE W 0.000

ZONE X 0.000

VIEW Y-Y

CASE 466-03

ISSUE D

PLD-1.5

PLASTIC

MRFG35005MT1

RF Device Data

Freescale Semiconductor

11

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MRFG35005MT1

RF Device Data

Freescale Semiconductor

Document Number: MRFG35005MT1

1^R2^{ev. 3, 1/2006}

型号	制造商	描述	价格	文档
100A100JPN150C100	KYOCERA AVX	RF Capacitor Porcelain	获取价格
100A100JPN150T	KYOCERA AVX	RF Capacitor Porcelain	获取价格
100A100JPN150T500	KYOCERA AVX	RF Capacitor Porcelain	获取价格
100A100JPN150TV	KYOCERA AVX	RF Capacitor Porcelain	获取价格
100A100JPN150XC100	KYOCERA AVX	RF Capacitor Porcelain	获取价格
100A100JPN150XT	KYOCERA AVX	RF Capacitor Porcelain	获取价格
100A100JPN150XT500	KYOCERA AVX	RF Capacitor Porcelain	获取价格
100A100JPN150XTV	KYOCERA AVX	RF Capacitor Porcelain	获取价格
100A100JPN250C100	KYOCERA AVX	RF Capacitor Porcelain	获取价格
100A100JPN250T	KYOCERA AVX	RF Capacitor Porcelain	获取价格

100A100JP500X

100A100JP500X 概述

100A100JP500X 数据手册

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