品牌 | 图片 | 型号 | 描述 | 用途标签 | 供应商 | |
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2N5716
中文翻译 品牌: ETC |
TRANSISTOR | JFET | N-CHANNEL | 50UA I(DSS) | TO-92
晶体管| JFET | N沟道| 50uA的我( DSS ) | TO- 92\n |
晶体 晶体管 | |||
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2N5717
中文翻译 品牌: NSC |
TRANSISTOR,JFET,N-CHANNEL,200UA I(DSS),TO-92 | ||||
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2N5718
中文翻译 品牌: NSC |
TRANSISTOR,JFET,N-CHANNEL,800UA I(DSS),TO-92 | ||||
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2N5719
中文翻译 品牌: NJSEMI |
SCRS 5AMP, PLANAR 沙特遥感5AMP ,平面 |
局域网 | |||
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2N5720
中文翻译 品牌: NJSEMI |
SCRS 5AMP, PLANAR 沙特遥感5AMP ,平面 |
局域网 | |||
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2N5721
中文翻译 品牌: NJSEMI |
SCRS 5AMP, PLANAR 沙特遥感5AMP ,平面 |
局域网 | |||
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2N5722
中文翻译 品牌: NJSEMI |
SCRS 5AMP, PLANAR 沙特遥感5AMP ,平面 |
局域网 | |||
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2N5723
中文翻译 品牌: NJSEMI |
SCRS 5AMP, PLANAR 沙特遥感5AMP ,平面 |
局域网 | |||
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2N5724
中文翻译 品牌: MICROSEMI |
Silicon Controlled Rectifier, 0.7065A I(T)RMS, 60V V(DRM), 60V V(RRM), 1 Element, TO-205AD, TO-39, 3 PIN | 栅 栅极 | ||
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2N5726
中文翻译 品牌: MICROSEMI |
Silicon Controlled Rectifier, 0.7065A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-205AD, TO-39, 3 PIN | 栅 栅极 | ||
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2N5726
中文翻译 品牌: SSDI |
Silicon Controlled Rectifier, 0.39A I(T)RMS, 390mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-5, TO-5, 3 PIN | 栅 栅极 | |||
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2N5727
中文翻译 品牌: MICROSEMI |
Silicon Controlled Rectifier, 0.7065A I(T)RMS, 300V V(DRM), 300V V(RRM), 1 Element, TO-205AD, TO-39, 3 PIN | 栅 栅极 | ||
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2N5727
中文翻译 品牌: SSDI |
Silicon Controlled Rectifier, 0.39A I(T)RMS, 390mA I(T), 300V V(DRM), 300V V(RRM), 1 Element, TO-5, TO-5, 3 PIN | 栅 栅极 | |||
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2N5729
中文翻译 品牌: MICROSEMI |
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, NPN, Silicon, TO-5, Metal, 3 Pin, | 晶体管 | |||
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2N5729
中文翻译 品牌: APITECH |
Power Bipolar Transistor, 5A I(C), 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin, | 晶体管 | |||
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2N5729
中文翻译 品牌: ASI |
Transistor | 晶体管 | |||
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2N5729
中文翻译 品牌: NJSEMI |
NPN TO-39/TO-5 NPN型的TO- 39 / TO-5 |
晶体 晶体管 | |||
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2N5730
中文翻译 品牌: VISHAY |
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-59, Metal, 3 Pin, TO-59, 3 PIN | 晶体管 | ||
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2N5730E3
中文翻译 品牌: MICROSEMI |
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-59, Metal, 3 Pin, TO-59, 3 PIN | ||||
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2N5731
中文翻译 品牌: ETC |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 20A I(C) | TO-210AC
晶体管| BJT | NPN | 80V V( BR ) CEO | 20A I(C ) | TO- 210AC\n |
晶体 晶体管 | |||
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2N5731E3
中文翻译 品牌: MICROSEMI |
Power Bipolar Transistor, 20A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, 3 Pin, TO-61, 3 PIN | 晶体管 | |||
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2N5732
中文翻译 品牌: ISC |
Silicon NPN Power Transistors 硅NPN功率晶体管 |
晶体 晶体管 局域网 | |||
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2N5732
中文翻译 品牌: SAVANTIC |
Silicon NPN Power Transistors 硅NPN功率晶体管 |
晶体 晶体管 局域网 | |||
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2N5732E3
中文翻译 品牌: MICROSEMI |
Power Bipolar Transistor, 20A I(C), 80V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL CAN-2 | 局域网 晶体管 | |||
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2N5733
中文翻译 品牌: ETC |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 30A I(C) | TO-210AE
晶体管| BJT | NPN | 80V V( BR ) CEO | 30A I(C ) | TO- 210AE\n |
晶体 晶体管 | |||
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2N5734
中文翻译 品牌: MICROSEMI |
Power Bipolar Transistor, 30A I(C), 80V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL CAN-2 | ||||
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2N5734
中文翻译 品牌: SEME-LAB |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package 在一个密封TO3金属封装的双极NPN装置 |
装置 | ||
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2N5734
中文翻译 品牌: ISC |
Silicon NPN Power Transistors 硅NPN功率晶体管 |
晶体 晶体管 | |||
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2N5734
中文翻译 品牌: SAVANTIC |
Silicon NPN Power Transistors 硅NPN功率晶体管 |
晶体 晶体管 | |||
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2N5734E3
中文翻译 品牌: MICROSEMI |
Power Bipolar Transistor, 30A I(C), 80V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL CAN-2 | 局域网 晶体管 |