| 品牌 | 图片 | 型号 | 描述 | 用途标签 | 供应商 | |
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2N6800
中文翻译 品牌: SEME-LAB |
N-CHANNEL POWER MOSFET N沟道功率MOSFET |
晶体 晶体管 开关 脉冲 | ||
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2N6800
中文翻译 品牌: INFINEON |
400V Single N-Channel Hi-Rel MOSFET in a TO-205AF package - A 2N6800 with Hermetic Packaging | 开关 脉冲 晶体管 | ||
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2N6800
中文翻译 品牌: MICROSEMI |
N-CHANNEL MOSFET N沟道MOSFET |
晶体 晶体管 开关 脉冲 | ||
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2N6800E
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | ||||
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2N6800EA
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | ||||
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2N6800EAPBF
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | ||||
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2N6800EB
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | ||||
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2N6800EC
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | ||||
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2N6800ECPBF
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | 晶体管 | |||
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2N6800EPBF
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | 晶体管 | |||
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2N6800LCC4
中文翻译 品牌: SEME-LAB |
N–CHANNEL ENHANCEMENT MODE N沟道增强模式 |
晶体 晶体管 脉冲 | |||
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2N6800SCC5205/019PBF
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | ||||
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2N6800TX
中文翻译 品牌: FAIRCHILD |
Power Field-Effect Transistor, 3A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | ||||
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2N6800TXV
中文翻译 品牌: FAIRCHILD |
Power Field-Effect Transistor, 3A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | 开关 脉冲 晶体管 | |||
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2N6800U
中文翻译 品牌: MICROSEMI |
N-CHANNEL MOSFET N沟道MOSFET |
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2N6800_01
中文翻译 品牌: SEME-LAB |
N–CHANNEL ENHANCE-MENT POWER MOSFET N沟道ENHANCE - MENT功率MOSFET |
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2N6801
中文翻译 品牌: ETC |
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 2.5A I(D) | TO-39
晶体管| MOSFET | N沟道| 450V V（ BR ） DSS | 2.5AI （D ） | TO- 39\n |
晶体 晶体管 | |||
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2N6802
中文翻译 品牌: INFINEON |
500V Single N-Channel Hi-Rel MOSFET in a TO-205AF package - A 2N6802 with Hermetic Packaging | |||
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2N6802
中文翻译 品牌: NJSEMI |
POWER MOS FIELD-EFFECT TRANSISTORS 功率MOS场效应晶体管 |
晶体 晶体管 功率场效应晶体管 | |||
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2N6802
中文翻译 品牌: SEME-LAB |
N–CHANNEL ENHANCEMENT N沟道增强 |
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2N6802
中文翻译 品牌: MICROSEMI |
N-CHANNEL MOSFET N沟道MOSFET |
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2N6802SCC5205/019
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | ||||
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2N6802U
中文翻译 品牌: MICROSEMI |
N-CHANNEL MOSFET N沟道MOSFET |
晶体 小信号场效应晶体管 | |||
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2N6804
中文翻译 品牌: MICROSEMI |
P-CHANNEL MOSFET P沟道MOSFET |
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2N6804E3
中文翻译 品牌: MICROSEMI |
Power Field-Effect Transistor, 11A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, ROHS COMPLIANT, METAL | 局域网 开关 脉冲 晶体管 | |||
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2N6804PBF
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 11A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | 局域网 开关 脉冲 晶体管 | |||
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2N6804SCC5206/004
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | 局域网 晶体管 | |||
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2N6804SCC5206/004PBF
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | 局域网 晶体管 | |||
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2N6804_12
中文翻译 品牌: MAS |
This 2N6804 switching transistor is military qualified up to the JANTXV level for high-reliability applications. 这2N6804开关晶体管是合格军人到JANTXV水平高可靠性应用。 |
晶体 开关 晶体管 | |||
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2N6806
中文翻译 品牌: ETC |
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 6.5A I(D) | TO-204AA
晶体管| MOSFET | P沟道| 200V V（ BR ） DSS | 6.5AI （D ） | TO- 204AA\n |
晶体 晶体管 |